Log in

Relevant bibliographies by topics / GFET / Journal articles

To see the other types of publications on this topic, follow the link: GFET.

Journal articles on the topic 'GFET'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'GFET.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Safari, Ali, Massoud Dousti, and Mohammad Bagher Tavakoli. "Distributed Amplifier Based on Monolayer Graphene Field Effect Transistor." Journal of Circuits, Systems and Computers 28, no. 14 (February 25, 2019): 1950231. http://dx.doi.org/10.1142/s0218126619502311.

Full text

Abstract:

Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain of 8[Formula: see text]dB, an input/output return loss less than [Formula: see text]10[Formula: see text]dB, [Formula: see text]3[Formula: see text]dB bandwidth from DC up to 5[Formula: see text]GHz and a dissipation of about 60.45[Formula: see text]mW for a 1.5[Formula: see text]V power supply. The main performance characteristics of the distributed amplifier are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

APA, Harvard, Vancouver, ISO, and other styles

2

Jmai, Bassem, Vitor Silva, and Paulo M. Mendes. "2D Electronics Based on Graphene Field Effect Transistors: Tutorial for Modelling and Simulation." Micromachines 12, no. 8 (August 18, 2021): 979. http://dx.doi.org/10.3390/mi12080979.

Full text

Abstract:

This paper provides modeling and simulation insights into field-effect transistors based on graphene (GFET), focusing on the devices’ architecture with regards to the position of the gate (top-gated graphene transistors, back-gated graphene transistors, and top-/back-gated graphene transistors), substrate (silicon, silicon carbide, and quartz/glass), and the graphene growth (CVD, CVD on SiC, and mechanical exfoliation). These aspects are explored and discussed in order to facilitate the selection of the appropriate topology for system-level design, based on the most common topologies. Since most of the GFET models reported in the literature are complex and hard to understand, a model of a GFET was implemented and made available in MATLAB, Verilog in Cadence, and VHDL-AMS in Simplorer—useful tools for circuit designers with different backgrounds. A tutorial is presented, enabling the researchers to easily implement the model to predict the performance of their devices. In short, this paper aims to provide the initial knowledge and tools for researchers willing to use GFETs in their designs at the system level, who are looking to implement an initial setup that allows the inclusion of the performance of GFETs.

APA, Harvard, Vancouver, ISO, and other styles

3

Toral-Lopez, Alejandro, Enrique G. Marin, Francisco Pasadas, Jose Maria Gonzalez-Medina, Francisco G. Ruiz, David Jiménez, and Andres Godoy. "GFET Asymmetric Transfer Response Analysis through Access Region Resistances." Nanomaterials 9, no. 7 (July 18, 2019): 1027. http://dx.doi.org/10.3390/nano9071027.

Full text

Abstract:

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. Here, we analyse in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by evaluating their cut-off frequency.

APA, Harvard, Vancouver, ISO, and other styles

4

Sri Selvarajan, Reena, Azrul Azlan Hamzah, Norliana Yusof, and Burhanuddin Yeop Majlis. "Channel length scaling and electrical characterization of graphene field effect transistor (GFET)." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (August 1, 2019): 697. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp697-703.

Full text

Abstract:

<p>The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.</p>

APA, Harvard, Vancouver, ISO, and other styles

5

Xiao, Xiang-Jie, Piao-Rong Xu, Gen-Hua Liu, Hui-Ying Zhou, Jian-Jun Li, Ai-Bin Chen, Yong-Zhong Zhang, and Hong-Xu Huang. "A numerical model of electrical characteristics for the monolayer graphene field effect transistors." European Physical Journal Applied Physics 86, no. 3 (June 2019): 30101. http://dx.doi.org/10.1051/epjap/2019190124.

Full text

Abstract:

A numerical model of carrier saturation velocity and drain current for the monolayer graphene field effect transistors (GFETs) is proposed by considering the exponential distribution of potential fluctuations in disordered graphene system. The carrier saturation velocity of GFET is investigated by the two-region model, and it is found to be affected not only by the carrier density, but also by the graphene disorder. The numerical solutions of the carrier density and carrier saturation velocity in the disordered GFETs yield clear and physical-based results. The simulated results of the drain current model show good consistency with the reported experimental data.

APA, Harvard, Vancouver, ISO, and other styles

6

Nastasi, Giovanni, and Vittorio Romano. "An Efficient GFET Structure." IEEE Transactions on Electron Devices 68, no. 9 (September 2021): 4729–34. http://dx.doi.org/10.1109/ted.2021.3096492.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Bungon, Theodore, Carrie Haslam, Samar Damiati, Benjamin O’Driscoll, Toby Whitley, Paul Davey, Giuliano Siligardi, Jerome Charmet, and Shakil A. Awan. "Graphene FET Sensors for Alzheimer’s Disease Protein Biomarker Clusterin Detection." Proceedings 60, no. 1 (November 5, 2020): 14. http://dx.doi.org/10.3390/iecb2020-07229.

Full text

Abstract:

We report on the fabrication and characterisation of Graphene field-effect transistor (GFET) Biosensors for detecting clusterin, a prominent protein biomarker of Alzheimer’s disease (AD). There are approximately 54 million people currently living with dementia worldwide and this is expected to rise to 130 million by 2050. Although there are over 400 different types of dementia, AD is the most common type, affecting between 50–75% of those diagnosed with dementia. Diagnosis of AD can take up to 2 years currently using MRI, PET, CT scans and memory tests. There is, therefore, an urgent need to develop low-cost, accurate, non-invasive and point-of-care (PoC) sensors for early diagnosis of AD. The GFET sensors we are developing to address this challenge were fabricated on Si/SiO2 substrate through processes of photolithographic patterning and metal lift-off techniques with evaporated chromium and sputtered gold contacts. Raman Spectroscopy was performed on the devices to determine the quality of the graphene. The GFETs were annealed to improve their performance before the channels were functionalized by immobilising the graphene surface with a linker molecule and anti-clusterin antibody. The detection was achieved through the binding reaction between the antibody and varying concentrations of clusterin antigen from 1 pg/mL to 1 ng/mL. The GFETs were characterized using 4-probe direct current (DC) electrical measurements which demonstrated a limit of detection of the biosensors to be below 1 pg/mL.

APA, Harvard, Vancouver, ISO, and other styles

8

Li, Fang, Zhongrong Wang, and Yunfang Jia. "Reduced Carboxylate Graphene Oxide based Field Effect Transistor as Pb2+ Aptamer Sensor." Micromachines 10, no. 6 (June 11, 2019): 388. http://dx.doi.org/10.3390/mi10060388.

Full text

Abstract:

Aptamer functionalized graphene field effect transistor (apta-GFET) is a versatile bio-sensing platform. However, the chemical inertness of graphene is still an obstacle for its large-scale applications and commercialization. In this work, reduced carboxyl-graphene oxide (rGO-COOH) is studied as a self-activated channel material in the screen-printed apta-GFETs for the first time. Examinations are carefully executed using lead-specific-aptamer as a proof-of-concept to demonstrate its functions in accommodating aptamer bio-probes and promoting the sensing reaction. The graphene-state, few-layer nano-structure, plenty of oxygen-containing groups and enhanced LSA immobilization of the rGO-COOH channel film are evidenced by X-ray photoelectron spectroscopy, Raman spectrum, UV-visible absorbance, atomic force microscopy and scanning electron microscope. Based on these characterizations, as well as a site-binding model based on solution-gated field effect transistor (SgFET) working principle, theoretical deductions for rGO-COOH enhanced apta-GFETs’ response are provided. Furthermore, detections for disturbing ions and real samples demonstrate the rGO-COOH channeled apta-GFET has a good specificity, a limit-of-detection of 0.001 ppb, and is in agreement with the conventional inductively coupled plasma mass spectrometry method. In conclusion, the careful examinations demonstrate rGO-COOH is a promising candidate as a self-activated channel material because of its merits of being independent of linking reagents, free from polymer residue and compatible with rapidly developed print-electronic technology.

APA, Harvard, Vancouver, ISO, and other styles

9

Akbari, Moaazameh, Mehdi Jafari Shahbazzadeh, Luigi La Spada, and Alimorad Khajehzadeh. "The Graphene Field Effect Transistor Modeling Based on an Optimized Ambipolar Virtual Source Model for DNA Detection." Applied Sciences 11, no. 17 (August 31, 2021): 8114. http://dx.doi.org/10.3390/app11178114.

Full text

Abstract:

The graphene-based Field Effect Transistors (GFETs), due to their multi-parameter characteristics, are growing rapidly as an important detection component for the apt detection of disease biomarkers, such as DNA, in clinical diagnostics and biomedical research laboratories. In this paper, the non-equilibrium Green function (NEGF) is used to create a compact model of GFET in the ballistic regime as an important building block for DNA detection sensors. In the proposed method, the self-consistent solutions of two-dimensional Poisson’s equation and NEGF, using the nearest neighbor tight-binding approach on honeycomb lattice structure of graphene, are modeled as an efficient numerical method. Then, the eight parameters of the phenomenological ambipolar virtual source (AVS) circuit model are calibrated by a least-square curve-fitting routine optimization algorithm with NEGF transfer function data. At last, some parameters of AVS that are affected by induced charge and potential of DNA biomolecules are optimized by an experimental dataset. The new compact model response, with an acceptable computational complexity, shows a good agreement with experimental data in reaction with DNA and can effectively be used in the plan and investigation of GFET biosensors.

APA, Harvard, Vancouver, ISO, and other styles

10

Behera, S., S. R. Pattanaik, and G. Dash. "Contact Resistance Induced Variability in Graphene Field Effect Transistors." Journal of Scientific Research 13, no. 1 (January 1, 2021): 153–63. http://dx.doi.org/10.3329/jsr.v13i1.48948.

Full text

Abstract:

The success of the graphene field-effect transistor (GFET) is primarily based on solving the problems associated with the growth and transfer of high-quality graphene, the deposition of dielectrics and contact resistance. The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. This is because process variability is inherent in semiconductor device manufacturing. Two units, even manufactured in the same batch, never show identical characteristics. Therefore, it is imperative that the effect of variability be studied with a view to obtain equivalent performance from similar devices. In this study, we undertake the variability of source and drain contact resistances and their effects on the performance of GFET. For this we have used a simulation method developed by us. The results show that the DC characteristics of GFET are highly dependent on the channel resistance. Also the ambipolar characteristics are strongly affected by the variation of source and drain resistances. We have captured their impact on the output as well as transfer characteristics of a dual gate GFET.

APA, Harvard, Vancouver, ISO, and other styles

11

Behera, S., S. R. Pattanaik, and G. Dash. "Contact Resistance Induced Variability in Graphene Field Effect Transistors." Journal of Scientific Research 13, no. 1 (January 1, 2021): 153–63. http://dx.doi.org/10.3329/jsr.v13i1.48948.

Full text

Abstract:

The success of the graphene field-effect transistor (GFET) is primarily based on solving the problems associated with the growth and transfer of high-quality graphene, the deposition of dielectrics and contact resistance. The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. This is because process variability is inherent in semiconductor device manufacturing. Two units, even manufactured in the same batch, never show identical characteristics. Therefore, it is imperative that the effect of variability be studied with a view to obtain equivalent performance from similar devices. In this study, we undertake the variability of source and drain contact resistances and their effects on the performance of GFET. For this we have used a simulation method developed by us. The results show that the DC characteristics of GFET are highly dependent on the channel resistance. Also the ambipolar characteristics are strongly affected by the variation of source and drain resistances. We have captured their impact on the output as well as transfer characteristics of a dual gate GFET.

APA, Harvard, Vancouver, ISO, and other styles

12

Jia, Yunfang, Jizhao Zhang, and Qingjie Fan. "A disposable DNA methylation sensor based on the printable graphene field effect transistor." E3S Web of Conferences 271 (2021): 04045. http://dx.doi.org/10.1051/e3sconf/202127104045.

Full text

Abstract:

The detection of DNA methylation is necessary for the research of epigenetics. In this work we would like to propose a disposable DNA methylation sensor by using graphene field effect transistor (GFET) as the sensing platform. In this component, the liquid-phase exfoliated graphene (LEG) nanosheets were drop-coated on the flexible substrates of polyethylene terephthalate (PET) films. Then, the interdigital structured electrodes (named as source and drain) were printed on the LEG coated PET films to form the expected GFETs. Thirdly, the carbon dots (CDs) decoration was conducted and examined on the asprepared GFETs to evaluate the influence of CDs, as well as optimize CDs’ concentration. At last, the immune identification-based sensing strategy was utilized on the CDs modified GFETs to develop the concerned DNA methylation sensor. The experimental data indicate the proposed sensors could be a potential experimental tool for epigenetic research.

APA, Harvard, Vancouver, ISO, and other styles

13

Ismail, Muhamad Amri, Khairil Mazwan Mohd Zaini, and Mohd Ismahadi Syono. "Modeling of Dirac voltage for highly p-doped graphene field-effect transistor measured at atmospheric pressure." Bulletin of Electrical Engineering and Informatics 9, no. 5 (October 1, 2020): 2117–24. http://dx.doi.org/10.11591/eei.v9i5.2209.

Full text

Abstract:

In this paper, the modeling approach of Dirac voltage extraction of highly p-doped graphene field-effect transistor (GFET) measured at atmospheric pressure is presented. The difference of measurement results between atmospheric and vacuum pressures was analyzed. This work was started with actual wafer-scale fabrication of GFET with the purposes of getting functional device and good contact of metal/graphene interface. The output and transfer characteristic curves were measured accordingly to support on GFET functionality and suitability of presented wafer fabrication flow. The Dirac voltage was derived based on the measured output characteristic curve using ambipolar virtual source model parameter extraction methodology. The circuit-level simulation using frequency doubler circuit shows the importance of accurate Dirac voltage value to the device practicality towards design integration.

APA, Harvard, Vancouver, ISO, and other styles

14

Safari, Ali, Massoud Dousti, and Mohammad Bagher Tavakoli. "Monolayer Graphene Field Effect Transistor-Based Operational Amplifier." Journal of Circuits, Systems and Computers 28, no. 03 (February 24, 2019): 1950052. http://dx.doi.org/10.1142/s021812661950052x.

Full text

Abstract:

Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp performances are tuned in term of the graphene channel length in order to obtain a reasonable gain and bandwidth. The main characteristics of the Op-Amp performance are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

APA, Harvard, Vancouver, ISO, and other styles

15

Zhu, R., Y. Zhang, J. Luo, S. Chang, Hao Wang, Q. Huang, and Jin He. "Graphene Field Effect Transistor’s Circuit Modeling and Radio Frequency Application Study." Key Engineering Materials 645-646 (May 2015): 139–44. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.139.

Full text

Abstract:

In this paper, a large signal circuit model of graphene field effect transistor (GFET) is described accurately by Verilog-A language, which is suitable for radio frequency circuit design and can be applied in HSPICE and ADS directly. Then two typical radio frequency (RF) circuits, frequency multiplier and mixer, are based on this GFET circuit model. The proposed circuits’ performance are analyzed respectively in 10GHz, 15GHz and 20GHz, and GFET’s application foreground in radio frequency area is discussed.

APA, Harvard, Vancouver, ISO, and other styles

16

Fadil, Dalal, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C. Lemme, et al. "A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology." Applied Sciences 10, no. 6 (March 23, 2020): 2183. http://dx.doi.org/10.3390/app10062183.

Full text

Abstract:

This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.

APA, Harvard, Vancouver, ISO, and other styles

17

S., Nanda B., and Puttaswamy P. S. "Modeling and simulation of graphene field effect transistor (GFET)." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (December 1, 2019): 4826. http://dx.doi.org/10.11591/ijece.v9i6.pp4826-4835.

Full text

Abstract:

<p><span>Graphene based top-gated Field effect transistor (GFET) is designed and simulated using the device simulator packages. The paper describes fabrication process and the device simulation aspects of the GFET device. Two devices with different gate lengths of 200nm and 350nm are simulated. Device simulations are carried out in open source TCAD software package. The results indicate a depletion FET type operation in which ON/OFF current ratio of 2.25 is obtained.</span></p>

APA, Harvard, Vancouver, ISO, and other styles

18

Dinh, Hien Sy. "Simulation of current-voltage characteristics of graphene field effect transistor (GFET)." Science and Technology Development Journal 16, no. 3 (September 30, 2013): 5–12. http://dx.doi.org/10.32508/stdj.v16i3.1633.

Full text

Abstract:

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

APA, Harvard, Vancouver, ISO, and other styles

19

Kam, Kevin, Brianne Tengan, Cody Hayashi, Richard Ordonez, and David Garmire. "Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology." Sensors 18, no. 9 (August 23, 2018): 2774. http://dx.doi.org/10.3390/s18092774.

Full text

Abstract:

We have pioneered the use of liquid polar organic molecules as alternatives to rigid gate-dielectrics for the fabrication of graphene field-effect transistors. The unique high net dipole moment of various polar organic molecules allows for easy manipulation of graphene’s conductivity due to the formation of an electrical double layer with a high-capacitance at the liquid and graphene interface. Here, we compare the performances of dimethyl sulfoxide (DMSO), acetonitrile, propionamide, and valeramide as polar organic liquid dielectrics in graphene field-effect transistors (GFETs). We demonstrate improved performance for a GFET with a liquid dielectric comprised of DMSO with high electron and hole mobilities of 154.0 cm2/Vs and 154.6 cm2/Vs, respectively, and a Dirac voltage <5 V.

APA, Harvard, Vancouver, ISO, and other styles

20

Li, Shasha, Tao Deng, Yang Zhang, Yuning Li, Weijie Yin, Qi Chen, and Zewen Liu. "Solar-blind ultraviolet detection based on TiO2 nanoparticles decorated graphene field-effect transistors." Nanophotonics 8, no. 5 (April 26, 2019): 899–908. http://dx.doi.org/10.1515/nanoph-2019-0060.

Full text

Abstract:

AbstractSensitive solar-blind ultraviolet (UV) photodetectors are important to various military and civilian applications, such as flame sensors, missile interception, biological analysis, and UV radiation monitoring below the ozone hole. In this paper, a solar-blind UV photodetector based on a buried-gate graphene field-effect transistor (GFET) decorated with titanium dioxide (TiO2) nanoparticles (NPs) was demonstrated. Under the illumination of a 325-nm laser (spot size ~2 μm) with a total power of 0.35 μW, a photoresponsivity as high as 118.3 A/W was obtained, at the conditions of zero gate bias and a source-drain bias voltage of 0.2 V. This photoresponsivity is over 600 times higher than that of a recently reported solar-blind UV photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A/W). Experiments showed that the photoresponsivity of the TiO2 NPs decorated GFET photodetectors can be further enhanced by increasing the source-drain bias voltage or properly tuning the gate bias voltage. Furthermore, the photoresponse time of the TiO2 NPs decorated GFET photodetectors can also be tuned by the source-drain bias and gate bias. This study paves a simple and feasible way to fabricate highly sensitive, cost-efficient, and integrable solar-blind UV photodetectors.

APA, Harvard, Vancouver, ISO, and other styles

21

Singh, Paramjot, Parsoua Abedini Sohi, and Mojtaba Kahrizi. "Finite Element Modelling of Bandgap Engineered Graphene FET with the Application in Sensing Methanethiol Biomarker." Sensors 21, no. 2 (January 15, 2021): 580. http://dx.doi.org/10.3390/s21020580.

Full text

Abstract:

In this work, we have designed and simulated a graphene field effect transistor (GFET) with the purpose of developing a sensitive biosensor for methanethiol, a biomarker for bacterial infections. The surface of a graphene layer is functionalized by manipulation of its surface structure and is used as the channel of the GFET. Two methods, doping the crystal structure of graphene and decorating the surface by transition metals (TMs), are utilized to change the electrical properties of the graphene layers to make them suitable as a channel of the GFET. The techniques also change the surface chemistry of the graphene, enhancing its adsorption characteristics and making binding between graphene and biomarker possible. All the physical parameters are calculated for various variants of graphene in the absence and presence of the biomarker using counterpoise energy-corrected density functional theory (DFT). The device was modelled using COMSOL Multiphysics. Our studies show that the sensitivity of the device is affected by structural parameters of the device, the electrical properties of the graphene, and with adsorption of the biomarker. It was found that the devices made of graphene layers decorated with TM show higher sensitivities toward detecting the biomarker compared with those made by doped graphene layers.

APA, Harvard, Vancouver, ISO, and other styles

22

Kurchak, Anatolii I., Anna N. Morozovska, and Maksym V. Strikha. "Hysteretic phenomena in GFET: Comprehensive theory and experiment." Journal of Applied Physics 122, no. 4 (July 28, 2017): 044504. http://dx.doi.org/10.1063/1.4996095.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Fahim-Al-Fattah, Md, Md Tawabur Rahman, Md Sherajul Islam, and Ashraful G. Bhuiyan. "A Study on Theoretical Performance of Graphene FET using Analytical Approach with Reference to High Cutoff Frequency." International Journal of Nanoscience 15, no. 03 (May 10, 2016): 1640001. http://dx.doi.org/10.1142/s0219581x16400019.

Full text

Abstract:

This paper presents a detailed study of theoretical performance of graphene field effect transistor (GFET) using analytical approach. GFET shows promising performance in terms of faster saturation as well as extremely high cutoff frequency (3.9[Formula: see text]THz). A significant shift of the Dirac point as well as an asymmetrical ambipolar behavior is observed on the transfer characteristics. Similarly, an approximate symmetrical capacitance–voltage (C–V) characteristics is obtained where it has guaranteed the consistency because it shows a significant saturation both in the accumulation and inversion region. In addition, a high transconductance of 6800[Formula: see text]uS at small channel length (20[Formula: see text]nm) along with high cutoff frequency (3.9[Formula: see text]THz) has been observed which demands for high speed field effect devices.

APA, Harvard, Vancouver, ISO, and other styles

24

Hao, Zhuang, Ziran Wang, Yijun Li, Yibo Zhu, Xuejun Wang, Carlos Gustavo De Moraes, Yunlu Pan, Xuezeng Zhao, and Qiao Lin. "Measurement of cytokine biomarkers using an aptamer-based affinity graphene nanosensor on a flexible substrate toward wearable applications." Nanoscale 10, no. 46 (2018): 21681–88. http://dx.doi.org/10.1039/c8nr04315a.

Full text

Abstract:

We present an approach for the label-free detection of cytokine biomarkers using an aptamer-functionalized, graphene field effect transistor (GFET) nanosensor on a flexible, SiO₂-coated polymer polyethylene naphthalate (PEN).

APA, Harvard, Vancouver, ISO, and other styles

25

Khan, Niazul I., and Edward Song. "Detection of an IL-6 Biomarker Using a GFET Platform Developed with a Facile Organic Solvent-Free Aptamer Immobilization Approach." Sensors 21, no. 4 (February 13, 2021): 1335. http://dx.doi.org/10.3390/s21041335.

Full text

Abstract:

Aptamer-immobilized graphene field-effect transistors (GFETs) have become a well-known detection platform in the field of biosensing with various biomarkers such as proteins, bacteria, virus, as well as chemicals. A conventional aptamer immobilization technique on graphene involves a two-step crosslinking process. In the first step, a pyrene derivative is anchored onto the surface of graphene and, in the second step, an amine-terminated aptamer is crosslinked to the pyrene backbone with EDC/NHS (1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride/N-hydroxysuccinimide) chemistry. However, this process often requires the use of organic solvents such as dimethyl formamide (DMF) or dimethyl sulfoxide (DMSO) which are typically polar aprotic solvents and hence dissolves both polar and nonpolar compounds. The use of such solvents can be especially problematic in the fabrication of lab-on-a-chip or point-of-care diagnostic platforms as they can attack vulnerable materials such as polymers, passivation layers and microfluidic tubing leading to device damage and fluid leakage. To remedy such challenges, in this work, we demonstrate the use of pyrene-tagged DNA aptamers (PTDA) for performing a one-step aptamer immobilization technique to implement a GFET-based biosensor for the detection of Interleukin-6 (IL-6) protein biomarker. In this approach, the aptamer terminal is pre-tagged with a pyrene group which becomes soluble in aqueous solution. This obviates the need for using organic solvents, thereby enhancing the device integrity. In addition, an external electric field is applied during the functionalization step to increase the efficiency of aptamer immobilization and hence improved coverage and density. The results from this work could potentially open up new avenues for the use of GFET-based BioMEMS platforms by broadening the choice of materials used for device fabrication and integration.

APA, Harvard, Vancouver, ISO, and other styles

26

Zhang, Yanan, Yue Ding, Can Li, Huaqiang Xu, Chunxiang Liu, Jingjing Wang, Yong Ma, Junfeng Ren, Yuefeng Zhao, and Weiwei Yue. "An optic-fiber graphene field effect transistor biosensor for the detection of single-stranded DNA." Analytical Methods 13, no. 15 (2021): 1839–46. http://dx.doi.org/10.1039/d1ay00101a.

Full text

Abstract:

Herein, a graphene field effect transistor (GFET) was constructed on an optical fiber end face to develop an integrated optical/electrical double read-out biosensor, which was used to detect target single-stranded DNA (tDNA).

APA, Harvard, Vancouver, ISO, and other styles

27

Hu, Guangliang, Jingying Wu, Chunrui Ma, Zhongshuai Liang, Weihua Liu, Ming Liu, Judy Z. Wu, and Chun-Lin Jia. "Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor." Materials Horizons 6, no. 2 (2019): 302–10. http://dx.doi.org/10.1039/c8mh01499j.

Full text

Abstract:

The linear shift in V_Dirac of a flexible GFET, caused by the flexoelectric effect of a PLZT gate, makes it enormously useful for both tuning the graphene doping state and detecting bending curvature.

APA, Harvard, Vancouver, ISO, and other styles

28

Masoumi, Saeid, Hassan Hajghassem, Alireza Erfanian, and Ahmad Molaei Rad. "Design and manufacture of TNT explosives detector sensors based on GFET." Sensor Review 38, no. 2 (March 19, 2018): 181–93. http://dx.doi.org/10.1108/sr-08-2017-0167.

Full text

Abstract:

Purpose Smart sensors based on graphene field effect transistor (GFET) and biological receptors are regarded as a promising nanomaterial that could be the basis for future generation of low-power, faster, selective real-time monitoring of target analytes and smaller electronics. So, the purpose of this paper is to provide details of sensors based on selective nanocoatings by combining trinitrotoluene (TNT) receptors (Trp-His-Trp) bound to conjugated polydiacetylene polymers on a graphene channel in GFET for detecting explosives TNT. Design/methodology/approach Following an introduction, this paper describes the way of manufacturing of the GFET sensor by using investigation methods for transferring graphene sheet from Cu foil to target substrates, which is functionalized by the TNT peptide receptors, to offer a system which has the capability of answering the presence of related target molecules (TNT). Finally, brief conclusions are drawn. Findings In a word, shortly after graphene discovery, it has been explored with a variety of methods gradually. Because of its exceptional electrical properties (e.g. extremely high carrier mobility and capacity), electrochemical properties such as high electron transfer rate and structural properties, graphene has already showed great potential and success in chemical and biological sensing fields. Therefore, the authors used a biological receptor with a field effect transistor (FET) based on graphene to fabricate sensor for achieving high sensitivity and selectivity that can detect explosive substances such as TNT. The transport property changed compared to that of the FET made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in TNT, and the results show the bipolar property change of GFET with the TNT concentration and the possibility to develop a robust, easy-to-use and low-cost TNT detection method for performing a sensitive, reliable and semi-quantitative detection in a wide detection range. Originality/value In this timeframe of history, TNT is a common explosive used in both military and industrial settings. Its convenient handling properties and explosive strength make it a common choice in military operations and bioterrorism. TNT and other conventional explosives are the mainstays of terrorist bombs and the anti-personnel mines that kill or injure more than 15,000 people annually in war-torn countries. In large, open-air environments, such as airports, train stations and minefields, concentrations of these explosives can be vanishingly small – a few parts of TNT, for instance, per trillion parts of air. That can make it impossible for conventional bomb and mine detectors to detect the explosives and save lives. So, in this paper, the authors report a potential solution with design and manufacture of a GFET sensor based on a biological receptor for real-time detection of TNT explosives specifically.

APA, Harvard, Vancouver, ISO, and other styles

29

Zhang, Ji, Yawei Lv, Sheng Chang, Hao Wang, Jin He, and Qijun Huang. "Prior knowledge input neural network method for GFET description." Journal of Computational Electronics 15, no. 3 (June 20, 2016): 911–18. http://dx.doi.org/10.1007/s10825-016-0842-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Purwidyantri, Agnes, Telma Domingues, Jérôme Borme, Joana Rafaela Guerreiro, Andrey Ipatov, Catarina M. Abreu, Marco Martins, Pedro Alpuim, and Marta Prado. "Influence of the Electrolyte Salt Concentration on DNA Detection with Graphene Transistors." Biosensors 11, no. 1 (January 17, 2021): 24. http://dx.doi.org/10.3390/bios11010024.

Full text

Abstract:

Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. Buffer and dilution factor are prevalent strategies towards the optimum performance of the GFETs. However, beyond the Debye length (λD), the role of the graphene-electrolytes’ ionic species interactions on the DNA behavior at the nanoscale interface is complicated. We studied the characteristics of the GFETs under different ionic strength, pH, and electrolyte type, e.g., phosphate buffer (PB), and phosphate buffer saline (PBS), in an automatic portable built-in system. The electrostatic gating and charge transfer phenomena were inferred from the field-effect measurements of the Dirac point position in single-layer graphene (SLG) transistors transfer curves. Results denote that λD is not the main factor governing the effective nanoscale screening environment. We observed that the longer λD was not the determining characteristic for sensitivity increment and limit of detection (LoD) as demonstrated by different types and ionic strengths of measuring buffers. In the DNA hybridization study, our findings show the role of the additional salts present in PBS, as compared to PB, in increasing graphene electron mobility, electrostatic shielding, intermolecular forces and DNA adsorption kinetics leading to an improved sensitivity.

APA, Harvard, Vancouver, ISO, and other styles

31

Abuelma’atti, Muhammad Taher. "Harmonic and intermodulation performance of MoS2FET- and GFET-based amplifiers." Analog Integrated Circuits and Signal Processing 76, no. 1 (April 27, 2013): 147–54. http://dx.doi.org/10.1007/s10470-013-0068-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Nastasi, Giovanni, and Vittorio Romano. "A full coupled drift-diffusion-Poisson simulation of a GFET." Communications in Nonlinear Science and Numerical Simulation 87 (August 2020): 105300. http://dx.doi.org/10.1016/j.cnsns.2020.105300.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Takabayashi, Susumu, Meng Yang, Shuichi Ogawa, Yuji Takakuwa, Tetsuya Suemitsu, and Taiichi Otsuji. "Dielectric-Tuned Diamondlike Carbon Materials for an Ultrahigh-Speed Self-Aligned Graphene Channel Field Effect Transistor." Advances in Science and Technology 77 (September 2012): 270–75. http://dx.doi.org/10.4028/www.scientific.net/ast.77.270.

Full text

Abstract:

The ‘DLC-GFET’, a graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film, is presented. The DLC film was formed ‘directly’ onto the graphene channel without forming passivation interlayers using our photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by significant photoemission from the sample with quite low electric power, minimizing plasma damage to the channel. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick DLC gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to improve the high-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from an oxygen species like H2O in the DLC film into the graphene channel, suggesting that a modulation-doped DLC structure with a δ-doped oxygen (nitrogen) species for the p (n) mode will overcome high access resistance.

APA, Harvard, Vancouver, ISO, and other styles

34

Takabayashi, Susumu, Meng Yang, Shuichi Ogawa, Yuji Takakuwa, Tetsuya Suemitsu, and Taiichi Otsuji. "Dielectric-tuned Diamondlike Carbon Materials for High-performance Self-aligned Graphene-channel Field Effect Transistors." MRS Proceedings 1451 (2012): 185–90. http://dx.doi.org/10.1557/opl.2012.960.

Full text

Abstract:

ABSTRACTThe ‘DLC-GFET’, a graphene field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film, is presented. The DLC film was formed ‘directly’ onto the graphene channel without forming passivation interlayers using our original photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by photoemission from the sample with quite low electric power to minimize plasma damage to the channel. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to improve the high-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from oxygen species in the DLC film into the graphene channel, promising a minute modulation doped structure with oxygen to overcome high resistance in the access region. Hence, a DLC film deposited by PA-CVD is a candidate for the gate dielectric on graphene.

APA, Harvard, Vancouver, ISO, and other styles

35

Nekrasov, Kireev, Emelianov, and Bobrinetskiy. "Graphene-Based Sensing Platform for On-Chip Ochratoxin A Detection." Toxins 11, no. 10 (September 20, 2019): 550. http://dx.doi.org/10.3390/toxins11100550.

Full text

Abstract:

In this work, we report an on-chip aptasensor for ochratoxin A (OTA) toxin detection that is based on a graphene field-effect transistor (GFET). Graphene-based devices are fabricated via large-scale technology, allowing for upscaling the sensor fabrication and lowering the device cost. The sensor assembly was performed through covalent bonding of graphene’s surface with an aptamer specifically sensitive towards OTA. The results demonstrate fast (within 5 min) response to OTA exposure with a linear range of detection between 4 ng/mL and 10 pg/mL, with a detection limit of 4 pg/mL. The regeneration time constant of the sensor was found to be rather small, only 5.6 s, meaning fast sensor regeneration for multiple usages. The high reproducibility of the sensing response was demonstrated via using several recycling procedures as well as various GFETs. The applicability of the aptasensor to real samples was demonstrated for spiked red wine samples with recovery of about 105% for a 100 pM OTA concentration; the selectivity of the sensor was also confirmed via addition of another toxin, zearalenone. The developed platform opens the way for multiplex sensing of different toxins using an on-chip array of graphene sensors.

APA, Harvard, Vancouver, ISO, and other styles

36

Fregonese, Sebastien, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, and Thomas Zimmer. "Benchmarking of GFET devices for amplifier application using multiscale simulation approach." Journal of Computational Electronics 12, no. 4 (November 15, 2013): 692–700. http://dx.doi.org/10.1007/s10825-013-0525-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Singh, Neeta, Sachin Kumar, Binod Kumar Kanaujia, Mirza Tariq Beg, Mainuddin, and Sandeep Kumar. "A compact broadband GFET based rectenna for RF energy harvesting applications." Microsystem Technologies 26, no. 6 (January 2, 2020): 1881–88. http://dx.doi.org/10.1007/s00542-019-04737-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Lamberti, P., M. La Mura, F. Pasadas, D. Jiménez, and V. Tucci. "Tolerance analysis of a GFET transistor for aerospace and aeronautical application." IOP Conference Series: Materials Science and Engineering 1024, no. 1 (January 1, 2021): 012005. http://dx.doi.org/10.1088/1757-899x/1024/1/012005.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Bandyopadhyay, M., G. Chakraborty, S. Roy, and S. Bhattacharjee. "Study of Graphene field effect transistor (GFET) for chemical sensing application." Journal of Physics: Conference Series 1797, no. 1 (February 1, 2021): 012045. http://dx.doi.org/10.1088/1742-6596/1797/1/012045.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Vimala, P., Manjunath Bassapuri, C. R. Harshavardhan, P. Harshith, Rahul Jarali, and T. S. Arun Samuel. "Study of a New Device Structure: Graphene Field Effect Transistor (GFET)." Journal of Nano- and Electronic Physics 13, no. 4 (2021): 04021–1. http://dx.doi.org/10.21272/jnep.13(4).04021.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Upadhyay, Abhishek Kumar, Ajay Kumar Kushwaha, and Santosh Kumar Vishvakarma. "A Unified Scalable Quasi-Ballistic Transport Model of GFET for Circuit Simulations." IEEE Transactions on Electron Devices 65, no. 2 (February 2018): 739–46. http://dx.doi.org/10.1109/ted.2017.2782658.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Pacheco-Sanchez, Anibal, Javier N. Ramos-Silva, Eloy Ramirez-Garcia, and David Jimenez. "A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances." IEEE Microwave and Wireless Components Letters 31, no. 1 (January 2021): 29–32. http://dx.doi.org/10.1109/lmwc.2020.3036845.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Nimje, Rohit, Rabinder Henry, Amit Patwardhan, Jayant Pawar, Prakash Viswanathan, Ashish Kumar Patel, and Pratik More. "AC and DC caracteristics of simulated Doped Graphene Field Effect Transistor (GFET) Frequency Multipliyer." International Journal of Applied Engineering Research 14, no. 1 (January 15, 2019): 240. http://dx.doi.org/10.37622/ijaer/14.1.2019.240-245.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Liang, Ji, Xing Yang, Shijun Zheng, Chongling Sun, Menglun Zhang, Hao Zhang, Daihua Zhang, and Wei Pang. "Modulation of acousto-electric current using a hybrid on-chip AlN SAW/GFET device." Applied Physics Letters 110, no. 24 (June 12, 2017): 243504. http://dx.doi.org/10.1063/1.4986481.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Yang, Xinxin, Andrei Vorobiev, Jian Yang, Kjell Jeppson, and Jan Stake. "A Linear-Array of 300-GHz Antenna Integrated GFET Detectors on a Flexible Substrate." IEEE Transactions on Terahertz Science and Technology 10, no. 5 (September 2020): 554–57. http://dx.doi.org/10.1109/tthz.2020.2997599.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Roslan, Ameer F., K. E. Kaharudin, F. Salehuddin, A. S. M. Zain, I. Ahmad, Z. A. N. Faizah, H. Hazura, et al. "Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method." Journal of Physics: Conference Series 1123 (November 2018): 012046. http://dx.doi.org/10.1088/1742-6596/1123/1/012046.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Bardhan, Sudipta, Manodipan Sahoo, and Hafizur Rahaman. "Boltzmann transport equation‐based semi‐classical drain current model for bilayer GFET including scattering effects." IET Circuits, Devices & Systems 13, no. 4 (May 16, 2019): 456–64. http://dx.doi.org/10.1049/iet-cds.2018.5104.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Pasadas, Francisco, and David Jimenez. "Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances." IEEE Transactions on Electron Devices 63, no. 7 (July 2016): 2936–41. http://dx.doi.org/10.1109/ted.2016.2570426.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Bala Tripura Sundari, B., and K. Arya Raj. "DC, frequency characterization of Dual Gated Graphene FET (GFET) Compact Model and its Circuit Application - Doubler Circuit." IOP Conference Series: Materials Science and Engineering 225 (August 2017): 012016. http://dx.doi.org/10.1088/1757-899x/225/1/012016.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Yadav, Deepika, Gen Tamamushi, Takayuki Watanabe, Junki Mitsushio, Youssef Tobah, Kenta Sugawara, Alexander A. Dubinov, et al. "Terahertz light-emitting graphene-channel transistor toward single-mode lasing." Nanophotonics 7, no. 4 (March 28, 2018): 741–52. http://dx.doi.org/10.1515/nanoph-2017-0106.

Full text

Abstract:

AbstractA distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emission at 5.2 THz with a radiation power of ~0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!