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Journal articles on the topic 'Giant Magnetoresistance (GMR)'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Djamal, Mitra. "Biosensor Based on Giant Magnetoresistance Material." International Journal of E-Health and Medical Communications 1, no. 3 (July 2010): 1–15. http://dx.doi.org/10.4018/jehmc.2010070101.

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In recent years, giant magnetoresistance (GMR) sensors have shown a great potential as sensing elements for biomolecule detection. The resistance of a GMR sensor changes with the magnetic field applied to the sensor, so that a magnetically labeled biomolecule can induce a signal. Compared with the traditional optical detection that is widely used in biomedicine, GMR sensors are more sensitive, portable, and give a fully electronic readout. In addition, GMR sensors are inexpensive and the fabrication is compatible with the current VLSI (Very Large Scale Integration) technology. In this regard, GMR sensors can be easily integrated with electronics and microfluidics to detect many different analytes on a single chip. In this article, the authors demonstrate a comprehensive review on a novel approach in biosensors based on GMR material.

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2

Ramli, Mitra Djamal, Freddy Haryanto, Sparisoma Viridi, and Khairurrijal. "Giant Magnetoresistance in (Ni₆₀Co₃₀Fe₁₀/Cu) Trilayer Growth by Opposed Target Magnetron Sputtering." Advanced Materials Research 535-537 (June 2012): 1319–22. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.1319.

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The giant magnetoresistance thin film of (Ni60Co30Fe10/Cu) trilayer were grown onto Si (100) substrate by dc-opposed target magnetron sputtering (dc-OTMS) technique. The growth parameters are: temperature of 100 0C, applied voltage of 600 volt, flow rate of Ar gas of 100 sccm, and growth pressure of 5.2 x10-1 Torr. The effects of Cu layer thickness and NiCoFe layer thickness on giant magnetoresistance (GMR) property of (Ni60Co30Fe10/Cu) trilayer were studied. We have found that the giant magnetoresistance (GMR) ratio of the sample was varied depend on the non-magnetic (Cu) layer thickness. The variation of Cu layer thickness presents an oscillatory behavior of GMR ratio. This oscillation reflects the exchange coupling oscillations between ferromagnetic and antiferromagnetic states, which are caused by an oscillation in the sign of the interlayer exchange coupling between ferromagnetic layers. The GMR ratio is change with increasing of NiCoFe layer thickness and presents GMR ratio of 70.0 % at tNiCoFe = 62.5 nm.

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3

Yin, Cong, Dan Xie, Jian-Long Xu, and Tian-Ling Ren. "Two-step thinning fabrication of giant magnetoresistance sensors for flexible applications." Modern Physics Letters B 28, no. 10 (April 20, 2014): 1450081. http://dx.doi.org/10.1142/s021798491450081x.

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Spin valve giant magnetoresistance (GMR) sensors were prepared by a two-step thinning method combining grind thinning and inductively coupled plasma (ICP) etching together. The fabrication processes of front GMR sensors and backside ICP etching were described in detail. Magnetoresistance ratio of about 4.24% and coercive field of approximately 11 Oe were obtained in a tested bendable GMR sensor. The variations of the magnetic property in GMR sensors were explained mainly from the temperature, ion beam damage and mechanical damage generated by the fabrication process.

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4

Li, Yadong, X. F. Duan, J. H. Zhang, H. R. Wang, Y. T. Qian, Z. Huang, J. Zhou, S. L. Yuan, W. Liu, and C. F. Zhu. "Giant magnetoresistance in bulk La0.6Mg0.4MnO3." Journal of Materials Research 12, no. 10 (October 1997): 2648–50. http://dx.doi.org/10.1557/jmr.1997.0353.

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A bulk sample of La0.6Mg0.4MnO3 has been prepared from coprecipitated carbonate precursor for the first time in this study. Structure analysis conducted by powder x-ray diffraction indicates that the sample is in the cubic perovskite phase. It shows a metal-insulator transition at 115 K (Tp) When applied to an external field, GMR effects are observed in the whole measured temperature range. The maximum negative MR value reaches as large as 480% at 105 K and 5 T. There may be two different mechanisms governing the GMR effects in the sample for the temperatures below and above Tp.

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5

Kok, K. Y., and I. K. Ng. "GIANT MAGNETORESISTANCE (GMR): SPINNING FROM RESEARCH TO ADVANCED TECHNOLOGY." ASEAN Journal on Science and Technology for Development 19, no. 2 (December 13, 2017): 33–43. http://dx.doi.org/10.29037/ajstd.336.

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In this paper, we aim to examine the research and development of materials demonstrating the giant magnetoresistance (GMR) property, a novel material property that has revolutionalised the advances of magnetic sensor and mass-memory technology today. A comprehensive outline for the fundamental materials aspects as well as the physics of the underlying mechanisms behind the GMR property is given. Recent development of GMR materials in data storage industry and other potential technological applications exploiting the GMR property are also discussed.

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6

He, J., Z. D. Zhang, J. P. Liu, and D. J. Sellmyer. "Effects of germanium on the electronic transport mechanism in Co20(Cu1-xGex)80 nanogranular ribbons." Journal of Materials Research 17, no. 12 (December 2002): 3050–55. http://dx.doi.org/10.1557/jmr.2002.0443.

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The dependency of giant magnetoresistance (GMR) on the nonmagnetic matrix in nanogranular Co20(Cu1-xGex)80 ribbons was studied. When the matrix Cu is substituted with semiconductor Ge, the magnetoresistance transitioned from negative to positive at low temperatures. The positive GMR effect is closely related to the quantity of Co/Co3Ge2/Co junctionlike configurations. This result provides evidence for the competition between two types of electronic transport mechanisms in the magnetic granular ribbons: (i) electronic spin-dependent scattering, inducing a negative magnetoresistance and (ii) Coulomb blockade of the electronic tunneling, inducing a positive magnetoresistance.

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7

YIN, CONG, DAN XIE, JIAN-LONG XU, and TIAN-LING REN. "PROTON IRRADIATION INFLUENCE ON THE MAGNETIC PROPERTIES OF GMR-SVs." Modern Physics Letters B 28, no. 04 (February 4, 2014): 1450022. http://dx.doi.org/10.1142/s0217984914500225.

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In this paper, crystal and magnetic properties of proton irradiated giant magnetoresistance spin valves (GMR-SVs) were investigated based on Ta / NiFe / CoFe / Cu / CoFe / IrMn / Ta stack. GMR-SVs were fabricated by magnetron sputtering and irradiated by 5 MeV proton energy. After irradiation, the magnetic phase of GMR-SV core structures was not affected distinctly while the crystal structure of Ta changed with the radiation dose and dose rate. Degradation of the saturated magnetization and the magnetoresistance ratio was shown in the proton-irradiated samples from the magnetization hysteresis curves and the magnetoresistance measurements, which was explained from the change in the zero-field resistance and the exchange interaction.

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8

Liang, Shuang, Phanatchakorn Sutham, Kai Wu, Kumar Mallikarjunan, and Jian-Ping Wang. "Giant Magnetoresistance Biosensors for Food Safety Applications." Sensors 22, no. 15 (July 28, 2022): 5663. http://dx.doi.org/10.3390/s22155663.

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Nowadays, the increasing number of foodborne disease outbreaks around the globe has aroused the wide attention of the food industry and regulators. During food production, processing, storage, and transportation, microorganisms may grow and secrete toxins as well as other harmful substances. These kinds of food contamination from microbiological and chemical sources can seriously endanger human health. The traditional detection methods such as cell culture and colony counting cannot meet the requirements of rapid detection due to some intrinsic shortcomings, such as being time-consuming, laborious, and requiring expensive instrumentation or a central laboratory. In the past decade, efforts have been made to develop rapid, sensitive, and easy-to-use detection platforms for on-site food safety regulation. Herein, we review one type of promising biosensing platform that may revolutionize the current food surveillance approaches, the giant magnetoresistance (GMR) biosensors. Benefiting from the advances of nanotechnology, hundreds to thousands of GMR biosensors can be integrated into a fingernail-sized area, allowing the higher throughput screening of food samples at a lower cost. In addition, combined with on-chip microfluidic channels and filtration function, this type of GMR biosensing system can be fully automatic, and less operator training is required. Furthermore, the compact-sized GMR biosensor platforms could be further extended to related food contamination and the field screening of other pathogen targets.

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9

SHENG, L., and D. Y. XING. "THEORY OF GIANT MAGNETORESISTANCE IN NONMULTILAYER MAGNETIC SYSTEMS." Modern Physics Letters B 07, no. 21 (September 10, 1993): 1365–72. http://dx.doi.org/10.1142/s0217984993001405.

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We present a simple theoretical description of recently measured giant magnetoresistance (GMR) effect in granular ferromagnetic systems. We propose that single-domain ferromagnetic particles embedded in a metallic medium form a series of randomly distributed and spin-dependent potential barriers and wells. This spin-dependent scattering is considered as the main origin of the GMR effect. Good agreement with experiment is found for phase-separated Co x Cu 1−x samples.

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10

RIZWAN, SYED, H. F. LIU, X. F. HAN, SEN ZHANG, Y. G. ZHAO, and S. ZHANG. "ELECTRIC-FIELD CONTROL OF GIANT MAGNETORESISTANCE IN SPIN-VALVES." SPIN 02, no. 01 (March 2012): 1250006. http://dx.doi.org/10.1142/s2010324712500063.

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It has been known that magnetic properties of a ferromagnet grown on piezoelectric substrates can be altered by the electric field-induced strain. We consider spin-valve CoFe/Cu/CoFe/IrMn grown on (011)-cut piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) substrate and investigate the effect of the electric field on the giant magnetoresistance (GMR) of the spin valve. We found that the electric field induced strain on PMN–PT substrate enhances the coercivity of the magnetic layers. The transport measurement shows that the GMR ratio of the spin valve could be altered as much as 50% for an electric field of -8 kV/cm. The change of GMR is attributed to the reduced maximum degree of the antiparallel alignment between the magnetization directions of the free and pinned layers. The present studies establish a prototype electrically tunable magnetic memory device such that the electric field can reversibly tune spin valve magnetoresistance without deteriorating electric and magnetic properties.

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11

Zsurzsa, Sándor, Moustafa El-Tahawy, László Péter, László Ferenc Kiss, Jenő Gubicza, György Molnár, and Imre Bakonyi. "Spacer Layer Thickness Dependence of the Giant Magnetoresistance in Electrodeposited Ni-Co/Cu Multilayers." Nanomaterials 12, no. 23 (December 1, 2022): 4276. http://dx.doi.org/10.3390/nano12234276.

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Electrodeposited Ni65Co35/Cu multilayers were prepared with Cu spacer layer thicknesses between 0.5 nm and 7 nm. Their structure and magnetic and magnetoresistance properties were investigated. An important feature was that the Cu layers were deposited at the electrochemically optimized Cu deposition potential, ensuring a reliable control of the spacer layer thickness to reveal the true evolution of the giant magnetoresistance (GMR). X-ray diffraction indicated satellite reflections, demonstrating the highly coherent growth of these multilayer stacks. All of the multilayers exhibited a GMR effect, the magnitude of which did not show an oscillatory behavior with spacer layer thickness, just a steep rise of GMR around 1.5 nm and then, after 3 nm, it remained nearly constant, with a value around 4%. The high relative remanence of the magnetization hinted at the lack of an antiferromagnetic coupling between the magnetic layers, explaining the absence of oscillatory GMR. The occurrence of GMR can be attributed to the fact that, for spacer layer thicknesses above about 1.5 nm, the adjacent magnetic layers become uncoupled and their magnetization orientation is random, giving rise to a GMR effect. The coercive field and magnetoresistance peak field data also corroborate this picture: with increasing spacer layer thickness, both parameters progressively approached values characteristic of individual magnetic layers. At the end, a critical analysis of previously reported GMR data on electrodeposited Ni-Co/Cu multilayers is provided in view of the present results. A discussion of the layer formation processes in electrodeposited multilayers is also included, together with a comparison with physically deposited multilayers.

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12

ZHOU, LEI, and RUIBAO TAO. "A QUANTUM MODEL FOR THE GIANT MAGNETORESISTANCE EFFECT." International Journal of Modern Physics B 10, no. 17 (July 30, 1996): 2103–10. http://dx.doi.org/10.1142/s0217979296000957.

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A quantum explanation based on the previous semi-classical theory has been presented for the giant magnetoresistance (GMR) effect in this letter. A simple model Hamiltonian has been proposed for the conduction electrons in the magnetic layered structures in which the interaction of the conduction electrons with the local spins and the spin-dependent scattering potential have been considered, then an analytical expression of the effective electric conductivity is derived after some simplifying procedures. The main feature of the GMR effect may be explained by this simple model qualitatively.

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13

Chen, L. H., S. Jin, T. H. Tiefel, and R. Ramesh. "Magnetoresistance in a deformed Cu-Ni-Fe alloy with ultrafine multilayer structure." Journal of Materials Research 9, no. 5 (May 1994): 1134–39. http://dx.doi.org/10.1557/jmr.1994.1134.

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The creation of a giant magnetoresistance (GMR) effect in a spinodally decomposed and deformed Cu-20% Ni-20% Fe alloy is reported. The alloy is processed to contain a locally multilayered superlattice-like structure with alternating ferromagnetic and nonmagnetic layers with a size scale of 10-20 Å. The microstructural modification produced a dramatic improvement in room-temperature magnetoresistance ratio from ∼0.6 to ∼5%. The observed magnetoresistance is most likely related to the spin-dependent scattering at the two-phase interface and in the ferromagnetic phase, although the exact mechanism involved may be qualitatively different from the usual GMR picture. A rather unusual temperature-dependence of magnetoresistance ratio, i.e., the room-temperature value being greater than that at 4.2 K, was found.

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14

Lobov, I. D., M. M. Kirillova, A. A. Makhnev, L. N. Romashev, and V. V. Ustinov. "Magnetooptics of Fe/Cr Superlattices." Solid State Phenomena 168-169 (December 2010): 517–20. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.517.

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The magnetooptical and optical properties, and giant magnetoresistance (GMR) of MBE-grown Fe(tx, Å)/Cr10 Å (tx=0.3-30 Å) superlattices and nanostructured multilayers are studied. The data obtained are used for characterization of magnetic clusters in structures with ultrathin Fe layers (tFe<6.6 Å) and for estimation of interfacial electron scattering parameters in GMR superlattices.

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15

Djamal, Mitra, and Ramli. "Thin Film of Giant Magnetoresistance (GMR) Material Prepared by Sputtering Method." Advanced Materials Research 770 (September 2013): 1–9. http://dx.doi.org/10.4028/www.scientific.net/amr.770.1.

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In recent decades, a new magnetic sensor based on magnetoresistance effect is highly researched and developed intensively. GMR material has great potential as next generation magnetic field sensing devices. It has also good magnetic and electric properties, and high potential to be developed into various applications of electronic devices such as: magnetic field sensor, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory. GMR material can be developed to be solid state magnetic sensors that are widely used in low field magnetic sensing applications. A solid state magnetic sensor can directly convert magnetic field into resistance, which can be easily detected by applying a sense current or voltage. Generally, there are many sensors for measuring the low magnetic field, such as: fluxgate sensor, Hall sensor, induction coil, GMR sensor, and SQUID sensor. Compared to other low magnetic field sensing techniques, solid state sensors have demonstrated many advantages, such as: small size (<0.1mm2), low power, high sensitivity (~0.1Oe) and good compatibility with CMOS technology. The thin film of GMR is usually prepared using: sputtering, electro deposition or molecular beam epitaxy (MBE) techniques. But so far, not many researchers reported the manufacture of thin film of GMR by dc-Opposed Target Magnetron Sputtering (dc-OTMS). In this paper, we inform the development of GMR thin film with sandwich and spin valve structures using dc-OTMS method. We have also developed organic GMR with Alq3 as a spacer layer.

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16

Lei, Qin, Xinxin Long, Huanyu Chen, Jihua Tan, Xinming Wang, and Rongzhi Chen. "Facilitating charge transfer via a giant magnetoresistance effect for high-efficiency photocatalytic hydrogen production." Chemical Communications 55, no. 96 (2019): 14478–81. http://dx.doi.org/10.1039/c9cc07812f.

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CoCu alloy magnetic unit was implanted in photocatalytic system to improve photoinduced charge separation efficiency by regulating electron transfer pathway via giant magnetoresistance (GMR) effect, achieving significantly H₂ production activity.

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17

Yang, Y., R. M. White, and M. Asheghi. "Thermal Characterization of Cu∕CoFe Multilayer for Giant Magnetoresistive Head Applications." Journal of Heat Transfer 128, no. 2 (June 21, 2005): 113–20. http://dx.doi.org/10.1115/1.2136916.

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Giant magnetoresistance (GMR) head technology is one of the latest advancements in the hard disk drive (HDD) storage industry. The GMR head multilayer structure consists of alternating layers of extremely thin metallic ferromagnetic and nonmagnetic films. A large decrease in the electrical resistivity from antiparallel to parallel alignment of the film magnetizations is observed, known as the GMR effect. The present work characterizes the in-plane electrical and thermal conductivities of Cu∕CoFe GMR multilayer structures in the temperature range of 50K to 340K using Joule-heating and electrical resistance thermometry on suspended bridges. The thermal conductivity of the GMR layer monotonically increases from 25Wm−1K−1 (at 55K) to nearly 50Wm−1K−1 (at room temperature). We also report a GMR ratio of 17% and a large magnetothermal resistance effect (GMTR) of 25% in the Cu∕CoFe multilayer structure.

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18

Xu, Hui-Ying, and Zhen-Hong Mai. "Current-in-Plane Magnetoresistance in a Magnetic Sandwich Structure with the Interface Inter-Diffusional Roughness." Modern Physics Letters B 12, no. 23 (October 10, 1998): 983–89. http://dx.doi.org/10.1142/s0217984998001141.

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By introducing a thin transition sublayer to describe the interface structure with large inter-diffusion, the impurities and other defects at it, current-in-plane (CIP) giant magnetoresistance (GMR) is calculated based on the Kubo formalism in real spaces. The oscillations of CIP GMR versus the thicknesses of various layers are predicted due to the quantum size effect. The contribution of the interface inter-diffusional roughness on the GMR effect is discussed with the variations of the thicknesses of ferromagnetic and nonmagnetic layers.

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19

Hütten, Andreas, and Gareth Thomas. "Materials science aspects in designing giant magnetoresistance in heterogeneous Cu1-xCox thin films." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 1018–19. http://dx.doi.org/10.1017/s0424820100150927.

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The recent discovery of giant magnetoresistance (GMR) in heterogeneous Cu1-xCox thin films has brought new insights in the phenomenon of GMR, which was previously believed to be restricted to multilayered structures only. Subsequent theoretical analyses of GMR in this new materials class have shown that GMR is mainly controlled by the mean radius and the volume fraction of single domain ferromagnetic particles. In addition to these parameters, the mean free path for electron in the non-magnetic matrix as well as coherency between particles and matrix are influencing the amplitude of GMR. Clearly, the key to increase the amplitude of GMR is to determine the decomposition kinetics and from which to optimize the single domain ferromagnetic Co particle size distribution in heterogeneous Cu1-xCox thin films.Cu81Col9 films, 50 nm in thickness, have been deposited by dc magnetron sputtering from separate Cu and Co targets onto 30 nm thick silicon nitride electron transparent grids.

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20

Liu, Zengcai, Yi-Ju Wang, Julia Litvinov, Pawilai Chinwangso, Richard Willson, and Dmitri Litvinov. "Corrosion Inhibitor for Use in Giant Magnetoresistance (GMR) Biosensors." ECS Transactions 33, no. 30 (December 17, 2019): 103–11. http://dx.doi.org/10.1149/1.3566093.

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21

Ramli, Euis Sustini, Nurlaela Rauf, and Mitra Djamal. "Giant Magnetoresistance in FeMn/NiCoFe/Cu/NiCoFe Spin Valve Prepared by Opposed Target Magnetron Sputtering." Advanced Materials Research 979 (June 2014): 85–89. http://dx.doi.org/10.4028/www.scientific.net/amr.979.85.

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The giant magnetoresistance (GMR) effect in FeMn/NiCoFe/Cu/NiCoFe spin valve prepared by dc opposed target magnetron sputtering is reported. The spin valve thin films are characterized by Scanning Electron Microscopy (SEM), Vibrating Sample Magnetometer (VSM) and magnetoresistance ratio measurements. All measurements are performed in room temperature. The inserted 45 mm thickness FeMn layer to the NiCoFe/Cu/NiCoFe system can increase the GMR ratio up to 32.5%. The coercive field to be increased is compared with different FeMn layer thickness. Furthermore, the coercive field (Hc) decreases with increasing FeMn layer thickness. Magnitude of coercive field is 0.1 T, 0.09 T and 0.08 T for FeMn layer thickness is 30 nm, 45 nm and 60 nm, respectively. The FeMn layer is used to lock the magnetization in the ferromagnetic layer through the exchange anisotropy. This paper will describe the development of a GMR spin valve and its magnetic properties.

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22

Wibowo, Nur Aji, Harsojo, and Edi Suharyadi. "Prospect of core-shell Fe₃O₄@Ag label integrated with spin-valve giant magnetoresistance for future point-of-care biosensor." Advances in Natural Sciences: Nanoscience and Nanotechnology 12, no. 4 (December 1, 2021): 045013. http://dx.doi.org/10.1088/2043-6262/ac498e.

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Abstract Magnetic-based biosensors are the analytical instruments that convert the biological recognition into the electrical signal through the generating of the stray-field of the magnetic nanoparticles (MNPs) attached to the biomolecule target. The magnetic biosensor feature relies on the transducer and the MNPs label selection. Recently, the biosensor with a point-of-care feature is the most expected device in the nowadays medical diagnostic field. So that, a review of the recent research related to the novel integration of magnetoresistance-based transducers with MNPs for biosensor application is vital for the point-of-care diagnostic development. Hence, the basic principle of biosensors and the giant magnetoresistance (GMR) with exchange bias phenomena are introduced. Furthermore, we provide a review of the cutting edge method in GMR biosensor with spin-valve structure (SV-GMR) which is integrated to MNPs for biomolecule labelling. As review results, among the nano-sized magnetoresistance transducer, the SV-GMR has some predominance, i.e. electrical robustness and moderate magnetoresistance ratio. Meanwhile, as compared to the other proposed MNPs such as pure Fe3O4, Fe2O3, and hybrid Fe3O4-graphene, the core-shell Fe3O4@Ag is potent to be used, which offers not only moderate saturation magnetisation but also good protein affinity, antimicrobial activity, and minimal cytotoxicity. According to the sensor performance comparison, the usage of Fe3O4@Ag for biomolecule labelling in synergy with SV-GMR transducer is prospective to be developed. The Ag shell espouses the protein immobilisation to the surface of the MNPs label that improves the sensor sensitivity. Furthermore, the SV-GMR possessed two modes of the Fe3O4@Ag rapid detection, which are through the moderate voltage change and the switching field shifting. Meanwhile, the concentration increase of Fe3O4@Ag can be well quantified. Moreover, the Fe3O4@Ag/SV-GMR system had a low operating magnetic field with rapid data collection. In conclusion, the Fe3O4@Ag/SV-GMR biosensor system is believed to be applied as a real-time, portable, and cost-effective biosensor.

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23

Touil, D. R., A. Daas, B. Helifa, A. C. Lahrech, and L. Ibn Khaldoun. "Simple Giant Magnetoresistance Probe Based Eddy Current System of Defect Characterization for Non-Destructive Testing." Advanced Electromagnetics 11, no. 2 (May 11, 2022): 43–48. http://dx.doi.org/10.7716/aem.v11i2.1910.

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The purpose of this paper is to present a new giant magnetoresistance (GMR) sensor, in eddy current testing technique for surface defect detection, in conducting materials, we show that the GMR based eddy currents probe is more sensitive than the inductive probe. A flat coil mounted on ferrite pot used to produce an alternate magnetic field, which gives rise to eddy currents in the material under test. Aluminum plates use with defects have nominal depths, widths, and lengths. The defects scanned with the sensing axis perpendicular to the defect length. Two parameters extracted from the GMR output voltage signal obtained, and a simple correlation between the defect’s dimensions and the GMR output voltage proposed.

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Ye, Rongli, Tian Gao, Haoyu Li, Xiao Liang, and Guixin Cao. "Anisotropic giant magnetoresistanceand de Hass–van Alphen oscillations in layered topological semimetal crystals." AIP Advances 12, no. 4 (April 1, 2022): 045104. http://dx.doi.org/10.1063/5.0086414.

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Here, we report an anisotropic giant magnetoresistance (GMR) effect and de Hass–van Alphen (dHvA) oscillation phenomena in nominal TaNiTe5 single crystals. TaNiTe5 exhibits the GMR effect with the maximum value of ∼3 × 103% at T = 1.7 K and B = 31 T, with no sign of saturation. The two-band model fitting of Hall resistivity indicates that the anomalous GMR effect was derived from the coexistence of electron and hole carriers. When the external magnetic field is applied to the electron–hole resonance, the GMR effect is enhanced. The dHvA oscillation data at multiple frequencies reveal the topological characteristics of high carrier mobility, low carrier effective mass, and a small Fermi surface pocket with a nontrivial Berry phase. Our work provides a new platform for the study of topological semimetals with significant anisotropic GMR effect.

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Guo, Q., X. G. Xu, Q. Q. Zhang, Q. Liu, Y. J. Wu, Z. Q. Zhou, W. M. Zhu, Y. Wu, J. Miao, and Y. Jiang. "Strain-controlled giant magnetoresistance of a spin valve grown on a flexible substrate." RSC Advances 6, no. 91 (2016): 88090–95. http://dx.doi.org/10.1039/c6ra17910j.

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This paper studies the strain-controlled giant magnetoresistance (GMR) change of a top pinned spin valve with the stacking structure of Co₉₀Fe₁₀/Cu/Co₉₀Fe₁₀/IrMn fabricated on a flexible polyethylene terephthalate substrate.

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Yang, Songlin, and Jin Zhang. "Current Progress of Magnetoresistance Sensors." Chemosensors 9, no. 8 (August 5, 2021): 211. http://dx.doi.org/10.3390/chemosensors9080211.

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Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common applications of MR sensors. Since the discovery of giant magnetoresistance (GMR) in the 1980s and the application of GMR reading heads in the 1990s, the MR sensors lead to the rapid developments of the HDDs’ storage capacity. Nowadays, MR sensors are employed in magnetic storage, position sensing, current sensing, non-destructive monitoring, and biomedical sensing systems. MR sensors are used to transfer the variation of the target magnetic fields to other signals such as resistance change. This review illustrates the progress of developing nanoconstructed MR materials/structures. Meanwhile, it offers an overview of current trends regarding the applications of MR sensors. In addition, the challenges in designing/developing MR sensors with enhanced performance and cost-efficiency are discussed in this review.

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WANG, YONG, MING XU, and ZHENHONG MAI. "DEPENDENCE OF GIANT MAGNETORESISTANCE ON THE THICKNESS OF MAGNETIC AND NON-MAGNETIC LAYERS IN DUAL SPIN VALVES." Modern Physics Letters B 18, no. 09 (April 10, 2004): 355–65. http://dx.doi.org/10.1142/s0217984904006949.

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Based on the previous semi-classical model, we have performed calculation of the giant magnetoresistance (GMR) as a function of the thickness of the top/bottom or center ferromagnetic layers and the non-magnetic layer in dual spin valves. Our results are in good agreement with that reported in experiment, i.e., a GMR maximum is observed when the thickness of the top/bottom magnetic layer is at 20 ~ 40 Å; the GMR value decreases monotonically with the increase of the non-magnetic layer thickness. By considering the "pin-hole" effect, the variation of GMR versus the thickness of the center magnetic layer is also found to be consistent with the experimental result. These calculations will be helpful in the design of high-quality spin-valve structures.

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Djamal, Mitra, Darsikin, Togar Saragi, and M. Barmawi. "Design and Development of Magnetic Sensors Based on Giant Magnetoresistance (GMR) Materials." Materials Science Forum 517 (June 2006): 207–11. http://dx.doi.org/10.4028/www.scientific.net/msf.517.207.

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This paper describes magnetic sensors that have been developed in the last three years. GMR thin film materials have been successfully developed using unpinned CoFe/Cu/CoFe sandwiches on Si(100) substrate using a home built dc-opposed-target magnetron sputtering (OTMS). The magnetization of the sandwich is measured using hysteresis loop instrument, the Vibrating Sample Magnetometer (VSM). It was found that the phase of GMR was formed, with the MR ratio 15.76%.

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29

Zhang, Jiao-Feng, Zheng-Hong Qian, Hua-Chen Zhu, Ru Bai, and Jian-Guo Zhu. "Model of output characteristics of giant magnetoresistance (GMR) multilayer sensor." Chinese Physics B 28, no. 8 (August 2019): 087501. http://dx.doi.org/10.1088/1674-1056/28/8/087501.

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30

Vedyayev, A., N. Ryzhanova, and B. Dieny. "Quantum effects in the giant magnetoresistance (GMR) of magnetic multilayers." Physica A: Statistical Mechanics and its Applications 241, no. 1-2 (July 1997): 207–15. http://dx.doi.org/10.1016/s0378-4371(97)00084-8.

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31

Bakonyi, I., and L. Péter. "Electrodeposited multilayer films with giant magnetoresistance (GMR): Progress and problems." Progress in Materials Science 55, no. 3 (March 2010): 107–245. http://dx.doi.org/10.1016/j.pmatsci.2009.07.001.

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32

Alof, C., and H. Hahn. "Nanostrukturierte dünne Schichten mit Giant Magnetoresistance (GMR) Effekt für Sensoranwendungen." Materialwissenschaft und Werkstofftechnik 31, no. 5 (May 2000): 365–69. http://dx.doi.org/10.1002/(sici)1521-4052(200005)31:5<365::aid-mawe365>3.0.co;2-o.

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33

Kong, Y. H., S. Y. Chen, G. L. Zhang, and X. Fu. "A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure." Journal of Nanomaterials 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/316897.

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We propose a giant magnetoresistance (GMR) device, which can be experimentally realized by depositing two ferromagnetic (FM) strips and a Schottky metal (SM) stripe in parallel configuration on top of the GaAs heterostructure. The GMR effect ascribes a significant electron transmission difference between the parallel and antiparallel magnetization configurations of two FM stripes. Moreover, the MR ratio depends strongly on the magnetic strength of the magnetic barrier (MB) and the electric barrier (EB) height induced by an applied voltage to the SM stripe. Thus, this system can be used as a GMR device with tunable MR by an applied voltage to SM stripe or by magnetic strength of the MB.

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34

Inomata, Koichiro, Yoshiaki Saito, Sigeo Honda, and Masahiko Nawate. "Giant Magnetoresistance and Interface Structure in Metallic Multilayers." IEEJ Transactions on Fundamentals and Materials 115, no. 10 (1995): 930–35. http://dx.doi.org/10.1541/ieejfms1990.115.10_930.

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35

TAO, Y. C., J. WANG, and J. G. HU. "EFFECT OF SPIN-FLIP SCATTERING ON CURRENT-IN-PLANE MAGNETO-TRANSPORT IN MAGNETIC MULTILAYERED STRUCTURES WITH ARBITRARY MAGNETIZATION ALIGNMENTS." International Journal of Modern Physics B 14, no. 15 (June 20, 2000): 1577–84. http://dx.doi.org/10.1142/s0217979200000728.

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By a quantization-axis transformation, we derive an extended equation which Green's function satisfies in the presence of spin-flip scattering, and then apply the Kubo formula to study the variation of the giant magnetoresistance (GMR) in magnetic multilayered structures with the angle θ between the magnetizations of succesive magnetic films. It is found that in the presence of spin-flip scattering and spin-dependent potential barriers, the linear dependence of GMR on sin 2(θ/2) can be approximately obtained, which is qualitatively consistent with the experimental result.

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36

Mabarroh, Ni’matil, Taufikuddin Alfansuri, Nurul Imani Istiqomah, Rivaldo Marsel Tumbelaka, and Edi Suharyadi. "GMR Biosensor Based on Spin-Valve Thin Films for Green-Synthesized Magnetite (Fe<sub>3</sub>O<sub>4</sub>) Nanoparticles Label Detection." Nano Hybrids and Composites 37 (August 31, 2022): 9–14. http://dx.doi.org/10.4028/p-v5gmkk.

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The giant magnetoresistance (GMR) thin film with spin valve (SV) structure of Ta (2 nm)/Ir20Mn80(10 nm)/Co90Fe10(3 nm)/Cu (2.2 nm)/Co84Fe10B4(10 nm)/Ta (5 nm)] fabricated by RF magnetron sputtering method with a magnetoresistance (MR) of 6% was used in this work. Green synthesis of Fe3O4 magnetic nanoparticles (MNPs) using Moringa Oleifera (MO) leaf extract have been successfully conducted using the coprecipitation method. Fe3O4 MNPs demonstrated the inverse cubic spinel structure with the average crystallite size of 13.8 nm and decreased to 11.8 nm for Fe3O4/PEG. Fe3O4, as a magnetic label, integrated with a Wheatstone bridge-GMR sensor provides access to GMR-based biosensors. The induced-field increase leads the signal (ΔV) to increase with increasing nanoparticle concentration. It was discovered that a sensor can distinguish different types of magnetic labels. The sensitivity for Fe3O4 and MO-green synthesized Fe3O4 magnetic label was 0.04 and 0.1 mV/g/L, respectively. The GMR sensor performed the highest sensitivity on the MO-green synthesized Fe3O4 label. Thus, the SV thin film as a sensor and the green-synthesized Fe3O4 nanoparticles as a superior magnetic label are an excellent combination for biosensor application.

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37

Susanti, Novi, and Edi Suharyadi. "Analisa Magnetoresistance Berbasis Lapisan Tipis Giant Magnetoresistance (GMR) Pada Nanopartikel Cobalt Ferrite (CoFe2O4) Dilapisi Polyethylen Glicol (PEG)." Jurnal Fisika Indonesia 20, no. 1 (November 29, 2017): 6. http://dx.doi.org/10.22146/jfi.27955.

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Telah dilakukan pengukuran magnetoresistance pada lapisan tipis spin valve GMR yang memiliki struktur CoFeB/Cu/CoFe/MnIr dengan memvariasikan ketebalan lapisan barrier Cu (2,2 dan 2,8 nm) dan free layer CoFeB (7 dan 10 nm) menggunakan System Four Point Probe Method (SFPPM) pada medan eksternal 0 600 gauss. Dihasilkan perubahan range resistansi (69,29-71,74) Ω untuk Cu 2,2 nm dan (38,5-40,47) Ω untuk ketebalan Cu 2,8 nm. Pada variasi ketebalan CoFeB dihasilkan perubahan range resistansi untuk ketebalan 7 nm dan 10 nm masing masing adalah (38,74-41,11) Ω dan (69,29-71,74) Ω. Selanjutnya lapisan tipis digunakan sebagai sensor magnetik untuk mendeteksi kehadiran nanopartikel CoFe2O4, CoFe2O4 yang dimodifikasi PEG dan CoFe2O4 termodifikasi PEG yang telah mengikat biomolekul formalin. Terjadi pergeseran nilai resistansi ketika lapisan tipis dilapisi nanopartikel magnetik tersebut. Hal ini menunjukkan bahwa lapisan tipis GMR mampu mendeteksi prilaku spin pada nanopartikel magnetik CoFe2O4.

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38

Hirai, Takamasa, Yuya Sakuraba, and Ken-ichi Uchida. "Observation of the giant magneto-Seebeck effect in a metastable Co₅₀Fe₅₀/Cu multilayer." Applied Physics Letters 121, no. 16 (October 17, 2022): 162404. http://dx.doi.org/10.1063/5.0118382.

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We report the observation of the giant magneto-Seebeck (GMS) effect in an epitaxially grown Co50Fe50/Cu multilayer film with metastable bcc Cu spacers under an in-plane temperature gradient. The magnetization-dependent switching ratio of the Seebeck coefficient, GMS ratio, and switching ratio of the thermoelectric power factor reach approximately −50% and 280% at room temperature, respectively, which are higher than those previously reported in magnetic multilayers with the current-in-plane geometry. By measuring the temperature dependence of both GMS and giant magnetoresistance (GMR) effects, we found that the GMS ratio remains high at high temperatures, while the GMR ratio quickly decreases with increasing temperature, where the spin-dependent electron scattering dominantly affects the large GMS effect in the Co50Fe50/Cu multilayer.

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39

Kulkarni, Prabhanjan D., Hitoshi Iwasaki, and Tomoya Nakatani. "The Effect of Geometrical Overlap between Giant Magnetoresistance Sensor and Magnetic Flux Concentrators: A Novel Comb-Shaped Sensor for Improved Sensitivity." Sensors 22, no. 23 (December 1, 2022): 9385. http://dx.doi.org/10.3390/s22239385.

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The combination of magnetoresistive (MR) element and magnetic flux concentrators (MFCs) offers highly sensitive magnetic field sensors. To maximize the effect of MFC, the geometrical design between the MR element and MFCs is critical. In this paper, we present simulation and experimental studies on the effect of the geometrical relationship between current-in-plane giant magnetoresistive (GMR) element and MFCs made of a NiFeCuMo film. Finite element method (FEM) simulations showed that although an overlap between the MFCs and GMR element enhances their magneto-static coupling, it can lead to a loss of magnetoresistance ratio due to a magnetic shielding effect by the MFCs. Therefore, we propose a comb-shaped GMR element with alternate notches and fins. The FEM simulations showed that the fins of the comb-shaped GMR element provide a strong magneto-static coupling with the MFCs, whereas the electric current is confined within the main body of the comb-shaped GMR element, resulting in improved sensitivity. We experimentally demonstrated a higher sensitivity of the comb-shaped GMR sensor (36.5 %/mT) than that of a conventional rectangular GMR sensor (28 %/mT).

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40

Hu, Jing Hua, Meng Chun Pan, Wu Gang Tian, and Jia Fei Hu. "Signal Detection Technology for Giant Magnetoresistance Sensors." Applied Mechanics and Materials 303-306 (February 2013): 270–73. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.270.

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Presently, many attentions have been paid on low-noise pre-amplifier circuits and steady signal processing methods, but seldom on the combination of two technologies. In this paper, a small size low noise pre-amplifier circuit with 110dB Common Mode Rejection Ratio（CMRR）has been developed for giant magnetoresistance sensors(GMR) and its equivalent input noise voltage density is about . In addition, we proposed a new signal processing method for the sensors. In the method, we defined the quotient between the complex multiplex computation times and the output data num as a new figure of merit to evaluate that algorithm efficiency in signal detection, and name that quotient the computation times -to- output data num ratio (CTOR). Simulation results showed that the new method realized better parameters evaluation precision and higher efficiency than Modified Rife method, could be implemented easily in embedded systems.

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41

Wang, Liqian, Zhongqiang Hu, Yuanyuan Zhu, Dan Xian, Jialin Cai, Mengmeng Guan, Chenying Wang, et al. "Electric Field-Tunable Giant Magnetoresistance (GMR) Sensor with Enhanced Linear Range." ACS Applied Materials & Interfaces 12, no. 7 (January 27, 2020): 8855–61. http://dx.doi.org/10.1021/acsami.9b20038.

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42

Menyhard, M., G. Zsolt, P. J. Chen, C. J. Powell, R. D. McMichael, and W. F. Egelhoff. "Structural effects in the growth of giant magnetoresistance (GMR) spin valves." Applied Surface Science 180, no. 3-4 (August 2001): 315–21. http://dx.doi.org/10.1016/s0169-4332(01)00372-5.

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43

Borole, Umesh P., Sasikala Subramaniam, Ishan R. Kulkarni, P. Saravanan, Harish C. Barshilia, and P. Chowdhury. "Highly sensitive giant magnetoresistance (GMR) based ultra low differential pressure sensor." Sensors and Actuators A: Physical 280 (September 2018): 125–31. http://dx.doi.org/10.1016/j.sna.2018.07.022.

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44

Vovk, V., and G. Schmitz. "Thermal stability of a Co/Cu giant magnetoresistance (GMR) multilayer system." Ultramicroscopy 109, no. 5 (April 2009): 637–43. http://dx.doi.org/10.1016/j.ultramic.2008.11.026.

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45

Nor, A. F. M., E. W. Hill, and M. R. Parker. "Geometry effects on low frequency noise in giant magnetoresistance (GMR) sensors." IEEE Transactions on Magnetics 34, no. 4 (July 1998): 1327–29. http://dx.doi.org/10.1109/20.706537.

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46

Andrianov, Timofey, and Anatoly Vedyayev. "Numerical simulation of spin transport in systems with complex geometry." EPJ Web of Conferences 185 (2018): 01021. http://dx.doi.org/10.1051/epjconf/201818501021.

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The spin diffusion and charge equations in Levy-Fert and Waintal models were numerically solved, using finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a magnetic pillar and nonmagnetic spacer separating two magnetic layers was investigated. It is shown, that the structure with number of pillars gives a higher value of Giant Magnetoresistance (GMR) effect rather than a structure with one pillar of equivalent diameter. The inhomogeneity of spin currents, which has one of the strongest impacts on GMR effect value leads to the occurrence of spin-current vortices. Introduction of lT and lL lengths in Waintal model gives a better description of angular dependence of GMR effect rather than Levy-Fert model.

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47

Uba, J. I., A. J. Ekpunobi, and P. I. Ekwo. "A model of the response of GMR of metallic multilayers to external magnetic field." Materials Science-Poland 33, no. 4 (December 1, 2015): 835–40. http://dx.doi.org/10.1515/msp-2015-0099.

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AbstractIt has not been possible to transform resistivity models in terms of magnetic field in order to account for variation of giant magnetoresistance (GMR) with external magnetic field, which would have led to determination of material properties. This problem is approached mathematically via variation calculus to arrive at an exponential function that fits observed GMR values. Using this model in free electron approximation, the mean Fermi vector, susceptibility and total density of states of a number of metallic multilayers are determined from their reported GMR values. Susceptibility is found to depend on interface roughness and antiferromagnetic (AF) coupling; thus, it gives qualitative measure of interface quality and AF coupling. Comparison of susceptibilities and GMRs of electrodeposited and ion beam sputtered Co/Cu structures shows that a rough interface suppresses GMR in the former but enhances it in the latter.

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48

Nam, Chunghee, Youngman Jang, Ki-Su Lee, Jungjin Shim, and B. K. Cho. "Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure." Journal of Nanoscience and Nanotechnology 6, no. 11 (November 1, 2006): 3483–86. http://dx.doi.org/10.1166/jnn.2006.17965.

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We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.

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49

Suharyadi, Edi, and Taufikuddin Alfansuri. "Magnetic Nanoparticle Detection Using Wheatstone Bridge Giant Magnetoresistance (GMR) Sensor with Double CoFeB Spin-Valve Thin Films." Key Engineering Materials 884 (May 2021): 348–52. http://dx.doi.org/10.4028/www.scientific.net/kem.884.348.

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The Wheatstone bridge-giant magnetoresistance (GMR) sensor with single and double spin valve thin film was successfully developed for potential biomolecular detection. The GMR sensor with spin valves structure of [Ta (2nm)/IrMn (10nm)/CoFe (3nm)/Cu (2,2nm)/CoFeB (10nm)/Ta (5nm)] was fabricated using DC Magnetic Sputtering method. The Fe3O4 magnetic nanoparticles were synthesized by the co-precipitation method as a magnetic label. The magnetic properties of the Fe3O4 nanoparticles measured are the saturation magnetization (Ms) of 77.7 emu/g, remanence magnetization (Mr) of 7.7 emu/g, and coercivity (Hc) of 49 Oe. The X-ray diffraction pattern showed the inverse cubic spinel structure with an average crystal size of about 20.1 nm. Fe3O4 magnetic nanoparticles with various concentrations were used to be detected using a GMR sensor. The output voltage of the GMR sensor with the single and double spin-valve increased from 1.7 to 3.9 mV and 2.9 to 5.3 mV with the increase of the Fe3O4 concentration from 0 to 20 mg/mL, respectively.

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Huang, Bao Xin, Jun Hua Wang, and Zhen Hua Wang. "The Special Magnetic Transition in Fe_X/(In₂O₃)_1-X Granular Films." Applied Mechanics and Materials 217-219 (November 2012): 703–6. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.703.

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Fe/In2O3 magnetic granular films have been prepared by radio frequency sputtering (rf) method. The results reveal that the nanometer-sized Fe grains uniformly disperse in the amorphous matrix In2O3 for the as-deposited samples. At room temperature, the Fe0.35/(In2O3)0.65 film shows a superparamagnetic behavior and 5.2% magnetoresistance (MR) ratio is obtained. The susceptibility measurements manifested that the blocking temperature is 50 K. Blow a certain freezing temperature Tf about 10K, the film transits from ferromagnetic state to a composite-cluster state in which the Fe atoms dispersed randomly in In2O3 severs as intermedia to couple the Fe grains together. In this case, the MR ratio of the film increases dramatically and a maximum giant magnetoresistance (GMR ) ratio up to 82.4% is obtained at 2.2 K, which is quite different to the MR effect at room temperature. The mechanism of this GMR is attributed to the increase of the hopping mobility of carriers under the applied magnetic field.

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