Journal articles on the topic 'Giant Rashba-type spin splitting'

Coexistence of Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K′ valleys (out-of-plane spin direction) makes the FRS AgBiP₂Te₆ monolayer a promising candidate for 2D spin FET and spin/valley Hall effect devices.

The influence of the mechanical strain on the electronic structure of the asymmetric (In,Ga)As/GaAs quantum well is considered. Both the direct influence of strain on the orbital part of the electronic structure and an indirect influence through the strain dependent Rashba and Dresselhaus Hamiltonians are taken into account. The analyzed quantum well is taken to have a triangular shape, and is oriented along the <110> direction. For this direction, there exists both the intrinsic and strain-induced spin-orbit interaction. For all analyzed types of spin-orbit interaction, subband splittings depend linearly on the in-plane wave vector. On the other hand, the electronic structure for the Rashba type of the strain-induced spin-orbit interaction shows isotropic dependence in the k-space, while the electronic structure due to the Dresselhaus type shows anisotropy. Furthermore, the Rashba strain-induced spin-orbit interaction increases subband splitting, while the effect of the Dresselhaus Hamiltonian on the electronic structure is opposite to the intrinsic spin-orbit interaction for certain polar angles.

This paper presents a brief review on the ternary phase equilibria in the ternary AV–BVI–I systems (AV = Sb, Bi; BVI = S, Se, Te). These systems includes the series of ternary compounds those are very attractive source materials for photo-, thermos- and ferroelectric energy transformation along the recently discovered semiconductors that exhibit Rashba-type spin splitting in their surface states. In the Rashba semiconductors, a unique toroidal 3D Fermi surface appears on the crystal surface, which leads to unusual properties that make it possible to realize unique electronic devices based on these compounds. The thorough knowledge on the ternary phase diagram of these systems shed light on the chemical and structural design of new multifunctional materials with tunable properties. This knowledge is very important whenfocusing on the chemistry of such multifunctional materials based on complex element systems.
 
 
 
 REFERENCES
 
 Audzijonis A., Sereika R., Ћaltauskas R. Antiferroelectric phase transition in SbSI and SbSeI crystals. Solid State Commun., 2008, v. 147(3–4), pp. 88–89. 
 https://doi.org/10.1016/j.ssc.2008.05.008
 
 Łukaszewicz K., Pietraszko A., Kucharska M. Diffuse Scattering, Short Range Order and Nanodomains in the Paraelectric SbSI. Ferroelectrics, 2008, v. 375(1), pp.170–177. https://doi.org/1080/00150190802438033
 Audzijonis A., Gaigalas G., Ţigas L., Sereika R., Ţaltauskas R., Balnionis D., Rëza A. Electronic structure and optical properties of BiSeI crystal. Phys. Status Solidi B, 2009, v. 246(7), pp. 1702–1708. https://doi.org/10.1002/pssb.200945110
 Audzijonis A., Zaltauskas R., Sereika R., Zigas L., Reza A. Electronic structure and optical properties of BiSI crystal. J. Phys. Chem. Solids. 2010, v. 71(6), pp. 884-891. https://doi.org/10.1016/j.jpcs.2010.03.042
 Ganose A. M., Butler K. T., Walsh A., Scanlon D. O. Relativistic electronic structure and band alignment of BiSI and BiSeI: candidate photovoltaic materials. J. Mater. Chem. A, 2016, v. 4(6), pp. 2060-2068. https://doi.org/10.1039/c5ta09612j
 Gerzanich E.I., Fridkin V.M. Ferroelectric materials of type AVBVICVII. Moscow, Nauka Publ., 1982. (in Russ.)
 Pierrefeu A., Steigmeier E. F., Dorner B. Inelastic neutron scattering in SbSI near the ferroelectric phase transformation. Phys. Status Solidi B, 1977, v. 80(1), pp. 167–171. https://doi.org/10.1002/pssb.2220800119
 Žičkus K., Audzijonis A., Batarunas J., Šileika A. The fundamental absorption edge tail of ferroelectric SbSI. Phys. Status Solidi B, 1984, v. 125(2), pp. 645–651. https://doi.org/10.1002/pssb.2221250225
 Rao K. K., Chaplot S. L. Dynamics of Paraelectric and Ferroelectric SbSI. Phys. Status Solidi B, 1985, v. 129(2), pp. 471–482. https://doi.org/10.1002/pssb.2221290204
 Grigas J., Talik E., Lazauskas V. Splitting of the XPS in ferroelectric SbSI crystals. Ferroelectrics, 2003, v. 284(1), pp. 147–160. https://doi.org/10.1080/00150190390204790
 Audzijonis A., Ћaltauskas R., Ћigas L., Vinokurova I. V., Farberovich O. V., Pauliukas A., Kvedaravičius A. Variation of the energy gap of the SbSI crystals at ferroelectric phase transition. Physica B, 2006, v. 371(1), pp. 68–73. https://doi.org/10.1016/j.physb.2005. 09.039
 Nowak M., Nowrot A., Szperlich P., Jesionek M., Kępińska M., Starczewska A., Mistewicz K., Stróż D., Szala J., Rzychoń T., Talik E., Wrzalik R. Fabrication and characterization of SbSI gel for humidity sensors. Sens. Actuators A, 2014, v. 210, pp. 119–130. https://doi.org/10.1016/j.sna.2014.02.012
 Ishizaka K., Bahramy M. S., Murakawa H., Sakano M., Shimojima T., Sonobe T., Koizumi K., Shin S., Miyahara H., Kimura A., Miyamoto K., Okuda T., Namatame H., Taniguchi M., Arita R., Nagaosa N., Kobayashi K., Murakami Y., Kumai R., Kaneko Y., Onose Y., Tokura Y. Giant Rashba-type spin splitting in bulk BiTeI. Nat. Mater., 2011, v. 10(7), pp. 521–526. https://doi.org/10.1038/nmat3051
 Landolt G., Eremeev S. V., Koroteev Yu. M., Slomski B., Muff S., Neupert T., Kobayashi M., Strocov V. N., Schmitt T., Aliev Z. S., Babanly M. B., Amiraslanov I. R., Chulkov E. V., Osterwalder J., Dil J. H. Phys. Rev. Lett., 2012, v. 109(11), p. 116403. https://doi.org/10.1103/physrevlett.109.116403
 Bahramy M. S., Yang B.-J., Arita R., Nagaosa N. Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure. Nature Commun., 2012, v. 3(1), p. 679. https://doi.org/10.1038/ncomms1679
 Landolt G., Eremeev S. V., Tereshchenko O. E., Muff S., Slomski B., Kokh K. A., Kobayashi M., Schmitt T., Strocov V. N., Osterwalder J., Chulkov E. V., Dil J. H. Bulk and surface Rashba splitting in single termination BiTeCl. New J. Phys., 2013, v. 15(8), p. 085022. https://doi.org/10.1088/1367-2630/15/8/085022
 Fiedler S., Bathon T., Eremeev S. V., Tereshchenko O. E., Kokh K. A., Chulkov E. V., Sessi P., Bentmann H., Bode M., Reinert F. Termination-dependent surface properties in the giant-Rashba semiconducto rsBiTeX(X=Cl, Br, I). Phys. Rev. B., 2015, v. 92(23), p. 235430. https://doi.org/10.1103/physrevb.92.235430
 Bahramy M. S., Ogawa N. Bulk Rashba semiconductors and related quantum phenomena. Adv. Mater., 2017, v. 29(25), p. 1605911. https://doi.org/10.1002/adma.201605911
 Gottstein G. Physical Foundations of Materials Science. Springer-Verlag Berlin Heidelberg, XIV, 2004, 502 p.
 Babanly M. B., Chulkov E. V., Aliev Z. S., Shevelkov A. V., Amiraslanov I. R. Phase diagrams in materials science of topological insulators based on metal chalcogenides. Russ. J. Inorg. Chem., 2017, v. 62(13), pp. 1703–1729. https://doi.org/10.1134/s0036023617130034
 Žičkus K., Audzijonis A., Batarunas J., Šileika A. The fundamental absorption edge tail of ferroelectric SbSI. Phys. Status Solidi B., 1984, v. 125(2), pp. 645–651. https://doi.org/10.1002/pssb.2221250225
 Belyayev L. M., Lyakhovitskaya V. A., Netesov G. B., Mokhosoev M.V., Aleykina S.M. Synthesis and crystallization of antimony sulfoiodide. Izv. Akad. Nauk, Neorg. Mater., 1965, v. 1(12), pp. 2178–2181. (in Russ.)
 Ryazantsev A. A., Varekha L. M., Popovkin B. A., Lyakhovitskaya V. A., Novoselova A. V. Р–T–x phase diagram of the SbI3–Sb2S3 system. Izv. Akad. Nauk, Neorg. Mater., 1969, v. 5(7), pp. 1296–1297 (in Russ.)
 Aliev Z. S., Musayeva S. S., Babanly M. B. The phase relationships in the Sb–S–I system and thermodynamic properties of the SbSI. J. Phase Equilib. Diffus., 2017, v. 38, pp. 887–896. https://doi.org/10.1007/s11669-017-0601-4
 Lukaszewicz K., Pietraszko A., Stepen’ Damm Yu., Kajokas A. Crystal structure and phase transitions of the ferroelectric antimony sulfoiodide SbSI. Part II. Crystal structure of SbSI in phases I, II and III. Pol. J. Chem., 1997, v. 71, pp. 1852–1857.
 Itoh K., Matsunaga H. A study of the crystal structure in ferroelectric SbSI. Zeitschrift für Krist., 1980, v. 152(3-4), p. 309–315. https://doi.org/10.1524/zkri.1980.152.3-4.309
 Aliev Z. S., Musaeva S. S., Babanly D. M., Shevelkov A. V., Babanly M. B. Phase diagram of the Sb–Se–I system and thermodynamic properties of SbSeI. J. Alloys Compd., 2010, v. 505(2), pp. 450–455. https://doi.org/10.1016/j.jallcom.2010.06.103
 Belotskiy D. P., Lapshin V. F., Boychuk R. F., Novalkovskiy N. P. The Sb2Sе3–SbI3 system. Izv. Akad. Nauk, Neorg. Mater., 1972, v. 8(3), pp. 572–574. (in Russ.)
 Dolgikh V. A., Popovkin B. A., Odin I. N., Novoselova A. V. Р–Т–х phase diagram of the Sb2Sе3–SbI3 system. Izv. Akad. Nauk, Neorg. Mater., 1973, v. 9(6), pp. 919–922. (in Russ.)
 Rodionov Yu. I., Klokman V. V., Myakishev K. G. The solubility of semiconductor compounds AIIBVI, AIVBIV and AVBVI in halide melts. Russ. J. Inorg. Chem., 1973, v. 17(3), pp. 846–849. (in Russ.)
 Chervenyuk G. I., Niyger F. V., Belotskiy D. P., Novalkovskiy N. P. Investigation of the phase equilibria in the SbSI–Sb, SbSI–S, SbSI–I systems. Izv. Akad. Nauk, Neorg. Mater., 1977, v. 13(6), pp. 989–991. (in Russ.)
 Aliev Z. S., Babanly M. B., Babanly D. M., Shevelkov A. V., Tedenac J. C. Phase diagram of the Sb–Te–I system and thermodynamic properties of SbTeI. Int. J. Mat. Res., 2012, v. 103(3), pp. 290–295. https://doi.org/10.3139/146.110646
 Belotskiy D. P., Antipov I. N., Nadtochiy V. F., Dodik S.M. Physicochemical investigations of the PbI2–SnI2, CdI2–ZnI2, BiI3–SbI3, Sb2Te3–SbI3, Bi2Te3–BiI3 systems. Izv. Akad. Nauk, Neorg. Mater., 1969, v. 5(10), pp. 1663–1667. (in Russ.)
 Belotskiy D. P., Dodik S. M., Antipov I. N., Nefedov Z. I. Synthesis and investigation of the telluroiodides of antimony and bismuth. Ukr. Chem. J., 1970, v. 36, pp. 897–900. (in Russ.)
 Aleshin V. A., Valitova N. R., Popovkin B. A., Novoselova A. V. P-T-x phase diagram of the antimony iodide system – antimony telluride. Izv. Akad. Nauk, Zhur. Fiz. Khim., 1974, v. 48, p. 2395. (in Russ.)
 Valitova N. R., Popovkin B. A., Novoselova A. V., Aslanov L. A. The compound SbTeI. Izv. Akad. Nauk, Neorg. Mater., 1973, v. 9, pp. 2222–2223. (in Russ.)
 Turyanitsa I. D., Olekseyuk I. D., Kozmanko I. I. Investigation of the Sb2Te3–SbI3 system and properties of the compound SbTeI. Izv. Akad. Nauk, Neorg. Mater., 1973, v. 9(8), pp. 433–1434. (in Russ.)
 Voutsas G. P., Rentzeperis P. J. The crystal structure of antimony selenoiodide, SbSeI. Zeitschrift für Kristallographie, 1983, v. 161(1–2), pp. 111–118. https://doi.org/10.1524/zkri.1982.161.1-2.111
 Kikuchi A., Oka Y., Sawaguchi E. Crystal Structure Determination of SbSI. J. Phys. Soc. Jap., 1967, v. 23(2), pp. 337–354. https://doi.org/10.1143/jpsj.23.337
 Kichambare P., Sharon M. Preparation, characterization and physical properties of mixed Sb1–xBixTeI. Solid State Ionics, 1997, v. 101–103, pp. 155–159. https://doi.org/10.1016/s0167-2738(97)84024-6
 Shevelkov A. V., Dikarev E. V., Shpanchenko R. V., Popovkin B.A. Crystal structures of bismuth tellurohalides BiTeX (X = Cl, Br, I) from X-ray powder diffraction data. J. Solid State Chem., 1995, v. 114(2), pp. 379–395. https://doi.org/10.1006/jssc.1995.1058
 Aliev Z. S., Jafarov Y. I., Jafarli F. Y., Shevelkov A. V., Babanly M. B. The phase equilibria in the Bi–S–I ternary system and thermodynamic properties of the BiSI and Bi19S27I3 ternary compounds. J. Alloys Compd. 2014, v. 610, pp. 522–528. https://doi.org/10.1016/j.jallcom.2014.05.015
 Ryazantsev T. A., Varekha L. M., Popovkin B. A., Novoselova A. V. P-T-x phase diagram of the BiI3–Bi2S3 system. Izv. Akad. Nauk, Neorg. Mater., 1970, v. 6, pp. 1175–1179. (in Russ.)
 Oppermann H., Petasch U. Zu den pseudobinären Zustandssystemen Bi2Ch3-BiX3 und den ternären Phasen auf diesen Schnitten (Ch = S, Se, Te; X = Cl, Br, I), I: Bismutsulfi dhalogenide/The Pseudobinary Systems Bi2Ch3–BiX3 and the Ternary Phases on their Boundary Lines (Ch = S, Se, Te; X = Cl, Br, I), I: Bismuth Sulfi de Halides. Z. Naturforsch. 2003, v. 58b, pp. 725–740. https://doi.org/10.1515/znb-2003-0803 (in German)
 Haase-Wessel W. Die Kristallstruktur des Wismutsulfi djodids (BiSJ). Naturwissenschaften, 1973, v. 60, pp. 474–474. https://doi.org/10.1007/bf00592859 (in German)
 Miehe G., Kupcik V. Die Kristallstruktur des Bi(Bi2S3)9J3. Naturwissenschaften, 1971, v. 58, pp. 219–219. DOI: 10.1007/bf00591851 (in German)
 Turjanica I. D., Zajachkovskii N. F., Zajachkovskaja N. F., Kozmanko I. I. Investigation of the BiI3–Bi2Se3 system. Izv. Akad. Nauk, Neorg. Mater., 1974, v. 11(10), p. 1884. (in Russ.)
 Belotskii D. P., Lapsin V. F., Baichuk R. F. The BiI3–Bi2Se3 system. Izv. Akad. Nauk Neorg. Mater., 1971, v. 7(11), p. 1936. (in Russ.)
 Dolgikh V. A., Odin I. N., Popovkin B. A., Novoselova A. V. P-T-x phase diagram of the BiI3–Bi2Se3 system. Vestn. Mosk. Univ., Dep. VINITI., 1973, v. 23(3), Dep. No. 5683-73. (in Russ.)
 Dolgikh V. A., Popovkin B. A., Ivanova G. I., Novoselova A. V. Investigation of the sublimation of the SbSeI and BiSeI. Izv. Akad. Nauk, Neorg. Mater., 1975, v. 11(4), p. 637. (in Russ.)
 Petasch U., Goebel H., Oppermann H. Untersuchungen zum quasibinären System Bi2Se3/BiI3. Z. Anorg. Allg. Chem., 1998, v. 624, p. 1767. https://doi.org/10.1002/(sici)1521-3749(1998110)624:11<1767::aidzaac1767>3.0.co;2-t (in German)
 Doenges E. Z. Über Chalkogenohalogenide des dreiwertigen Antimons und Wismuts. II. Über Selenohalogenide des dreiwertigen Antimons und Wismuts und über Antimon(III)-selenid Mit 2 Abbildungen. Anorg. Allg. Chem., 1950, v. 263(5–6), pp. 280–291. https://doi.org/10.1002/zaac.19502630508 (in German)
 Braun T. P., DiSalvo F. J. Bismuth selenide iodide. Acta Crystallogr., 2000, v. C56(1), pp. e1–e2. https://doi.org/10.1107/s0108270199016017
 Chervenyuk G. I., Babyuk P. F., Belotskii D. P., Chervenyuk T. G. Phase equilibria in the Bi–Se–I system along the BiSeI–Bi and BiSeI–BiI sections. Izv. Akad. Nauk, Neorg. Mater., 1982, v. 18, pp. 1569–1572. (in Ukr.)
 Babanly M. B., Tedenac J. C., Aliev Z. S., Balitsky D. M. Phase equilibriums and thermodynamic properties of the system Bi–Te–I. J. Alloys Compd., 2009, v. 481, pp. 349–353. https://doi.org/10.1016/j.jallcom.2009.02.139
 Horak J., Rodot H. Preparation de cristaux du compose BiTeI. C. R. Acad. Sci. Paris Serie B, 1968, v. 267(6), pp. 363–366.
 Valitova N. R., Aleshin V. A., Popovkin B. A., Novoselova A. V. Investigation of the P-T-x phase diagram for the BiI3–Bi2Te3 system. Izv. Akad. Nauk, Neorg. Mater., 1976, v. 12(2), pp. 225–228. (in Russ.)
 Tomokiyo A., Okada T., Kawanos S. Phase diagram of system (Bi2Te3)–(BiI3) and crystal structure of BiTeI. Jpn. J. Appl. Phys. 1977, v. 16(6), pp. 291–298. https://doi.org/10.1143/jjap.16.291
 Evdokimenko L. T., Tsypin M. I. The effect of halogens on the structure and properties of alloys based on Bi2Te3. Izv. Akad. Nauk, Neorg. Mater., 1971, v. 7(8), pp. 1317–1320. (in Russ.)
 Savilov S. V., Khrustalev V. N., Kuznetsov A. N., Popovkin B. A., Antipin Ju.M. New subvalent bismuth telluroiodides incorporating Bi2 layers: the crystal and electronic structure of Bi2TeI. Russ. Chem. Bull., 2005, v. 54(1), pp. 87–92. https://doi.org/10.1007/s11172-005-0221-8

Due to a strong spin orbit interaction HgTe quantum well structures exhibit an unusual subband structure ordering which leads to some remarkable transport properties depending on the actual carrier density. Especially for quantum wells with an inverted band structure ordering, a strong Rashba-type spin orbit splitting gives rise to a strong spin Hall effect in the metallic regime and in the bulk insulating regime spin polarized edge channel transport leads to the formation of the quantum spin Hall effect. Gated quantum well structures have been used to explore these, the metallic and insulating, transport regimes experimentally.

When monolayer (ML) MoS2 is placed on a substrate, the proximity-induced interactions such as the Rashba spin-orbit coupling (RSOC) and exchange interaction (EI) can be introduced. Thus, the electronic system can behave like a spintronic device. In this study, we present a theoretical study on how the presence of the RSCO and EI can lead to the band splitting, the lifting of the valley degeneracy and to the spin polarization in [Formula: see text]- and [Formula: see text]-type ML MoS2. We find that the maxima of the in-plane spin orientation in the conduction and valence bands in ML MoS2 depend on the Rashba parameter and the effective Zeeman field factor. At a fixed Rashba parameter, the minima of the split conduction band and the maxima of the split valence band along with the spin polarization in ML MoS2 can be tuned effectively by varying the effective Zeeman field factor. On the basis that the EI can be induced by placing the ML MoS2 on a ferromagnetic substrate or by magnetic doping in ML MoS2, we predict that the interesting spintronic effects can be observed in [Formula: see text]- and [Formula: see text]-type ML MoS2. This work can be helpful to gain an in-depth understanding of the basic physical properties of ML MoS2 for application in advanced electronic and optoelectronic devices.

We investigate Anomalous Hall effect in nonmagnetic metal/ferromagnetic insulator bilayer with rotating magnetization of the magnetic insulator. Spin-orbit interaction of Rashba type takes place near metal/insulator interface. Magnetization of the ferromagnetic insulator rotates with some frequency w by microwave radiation under ferromagnetic resonance condition. This rotation together with spin-orbit interaction in non-magnetic metal layer induced Hall current along the interface. The Hall current appears under zero bias in the system. The dependence of Hall current on the exchange splitting, the magnetization rotation frequency and the barrier height is calculated. We analyze various contributions in Hall current and discuss the limit of small frequencies.

On the basis of Lee–Low–Pines unitary transformation, the influence of Rashba spin-orbit (RSO) interaction and Zeeman splitting on the ground state energy of polaron in an asymmetric quantum dot (AQD) is studied by using the variational method of Pekar type. The variations of the absolute ratios of the Zeeman splitting energy and the RSO coupling energy to the ground state energy of polaron with the transverse confinement length (TCL) and the longitudinal confinement length (LCL) of AQD and the magnetic field adjusting length (MFAL) are derived when the RSO interaction and the Zeeman splitting are taken into account. We find the influences of the Zeeman splitting energy and the RSO coupling energy on the ground state energy of a polaron are more dominant when the values of the TCL and the LCL are small. The absolute ratio of the Zeeman splitting energy to the ground state energy rapidly decreases with increasing the MFAL and the absolute ratio of the RSO coupling energy to the ground state energy slowly decreases with increase in MFAL when [Formula: see text], whereas the absolute ratio of the RSO coupling energy to the ground state energy rapidly increases with increase in MFAL when [Formula: see text]. The above results can be attributed to the interesting quantum size confining and spin effects.

Abstract A large and ideal Rashba-type spin-orbit splitting is desired for the applications of materials in spintronic devices and the detection of Majorana Fermions in solids. Here, we propose an approach to achieve giant and ideal spin-orbit splittings through a combination of ordered surface alloying and interface engineering, that is, growing alloy monolayers on an insulating polar surface. We illustrate this unique strategy by means of first-principles calculations of buckled hexagonal monolayers of SbBi and PbBi supported on Al2O3(0001). Both systems display ideal Rashba-type states with giant SO splittings, characterized with energy offsets over 600 meV and momentum offsets over 0.3 Å −1, respectively. Our study thus points to an effective way of tuning spin-orbit splitting in low-dimensional materials to draw immediate experimental interest.

Abstract Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for spintronics applications since it allows for flexible manipulation of spin current by external electric fields. Here, we report the discovery of a giant anisotropic Rashba-like spin splitting along three momentum directions (3D Rashba-like spin splitting) with a helical spin polarization around the M points in the Brillouin zone of trigonal layered PtBi2. Due to its inversion asymmetry and reduced symmetry at the M point, Rashba-type as well as Dresselhaus-type SOC cooperatively yield a 3D spin splitting with αR ≈ 4.36 eV Å in PtBi2. The experimental realization of 3D Rashba-like spin splitting not only has fundamental interests but also paves the way to the future exploration of a new class of material with unprecedented functionalities for spintronics applications.

AbstractNonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.

AbstractA large magnetoresistance was observed in n-type Cdl-xMnxSe (x ≤ 0.10) at low temperatures. The concomitant changes in the Half coefficient as a function of H were also studied. These magnetotransport effects are caused by the s-d interaction. Some specific magnetoresistance mechanisms are discussed. The most likely dominant mechanisms are related to the giant spin splitting of the conduction band.