Relevant bibliographies by topics / Glass for semiconductors

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Glass for semiconductors'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "Glass for semiconductors"

1

Rigaux, Claudette. "Spin Glass Dynamics in Semimagnetic Semiconductors." Annales de Physique 20, no. 4 (1995): 445–55. http://dx.doi.org/10.1051/anphys:199504002.

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Mobley, Tim, Roupen Keusseyan, Tim LeClair, Konstantin Yamnitskiy, and Regi Nocon. "Characterization of a Semiconductor Packaging System utilizing Through Glass Via (TGV) Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (2015): 001378–407. http://dx.doi.org/10.4071/2015dpc-wp13.

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Recent developments in hole formations in glass, metalizations in the holes, and glass to glass sealing are enabling a new generation of designs to achieve higher performance while leveraging a wafer level packaging approach for low cost packaging solutions. The need for optical transparency, smoother surfaces, hermetic vias, and a reliable platform for multiple semiconductors is growing in the areas of MEMS, Biometric Sensors, Medical, Life Sciences, and Micro Display packaging. This paper will discuss the types of glass suitable for packaging needs, hole creation methods and key specificatio
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Sharma, Ambika, and P. B. Barman. "Effect of Bi Additions upon the Physical Properties of Germanium Telluride Glassy Semiconductors." Defect and Diffusion Forum 293 (August 2009): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ddf.293.107.

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The effect of bismuth (Bi) additions upon the physical properties, coordination number (m), constraints (Nc), density (ρ), molar volume (Vm), cohesive energy (CE), lone pair electrons (L) and glass transition temperature (Tg) of Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) bulk glassy alloy has been investigated. The density and molar volume of the glassy alloys has been found to increase with increasing Bi content. The CE of the investigated samples has been calculated by using the chemical bond approach (CBA) and is correlated with a decrease in the optical band-gap with increasing Bi content. The g
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Savchuk, Andriy I., Volodymyr I. Fediv, Tetyana A. Savchuk, et al. "Optical and Magneto-Optical Studies of Composite Materials Containing Semimagnetic Semiconductor Nanoparticles." Solid State Phenomena 151 (April 2009): 259–63. http://dx.doi.org/10.4028/www.scientific.net/ssp.151.259.

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Сomposite films containing II-VI based semiconductor nanoparticles have been prepared by different physical and chemical techniques. Non-magnetic CdS1-xSex nanoparticles were grown by melting of the semiconductor doped fine powder borosilicate glass. The composite semimagnetic semiconductor Cd1-xMnxTe based films were fabricated by embedding in SiO2 matrix with using of pulsed laser deposition technique. New chemical approach to synthesis of Cd1-xMnxS nanoparticles in polymer matrix has been proposed. The optical absorption edge for CdS1-xSex , Cd1-xMnxTe nanoparticles and exciton structure in
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Kim, M. J., L. C. Liu, S. H. Risbud, and R. W. Carpenter. "Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 728–29. http://dx.doi.org/10.1017/s0424820100176770.

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When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because
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BANFI, G. P., V. DEGIORGIO, D. FORTUSINI, and H. M. TAN. "BELOW BAND-GAP NONLINEAR OPTICAL PROPERTIES OF SEMICONDUCTOR-DOPED GLASSES." Journal of Nonlinear Optical Physics & Materials 05, no. 02 (1996): 205–22. http://dx.doi.org/10.1142/s0218863596000167.

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Through nonlinear transmission and wave-mixing measurements. combined with structural data from neutron scattering, we obtain the below band-gap third-order susceptibility χ(3) (both imaginary and real part) and the refractive-index-change per carrier of semiconductor nanocrystals embedded in a glass matrix. Our data covers a range of crystal radii between 2 and 14 nm, and a range of ratios y=Eg /(ħω), where Eg is the energy gap of the semiconductor and ħω is the energy of the incident photon, between 1.1 and 1.9. The magnitude of χ(3) and its dependence on y are comparable to those of related
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Rusin, Tomasz M. "Superexchange and spin-glass formation in semimagnetic semiconductors." Physical Review B 53, no. 19 (1996): 12577–80. http://dx.doi.org/10.1103/physrevb.53.12577.

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Sharma, Ishu, and Sruthi Sunder. "Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge12Se76 - xAs12Bix glassy semiconductors." Materials Science-Poland 36, no. 2 (2018): 242–54. http://dx.doi.org/10.1515/msp-2018-0006.

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AbstractGlass forming ability of lone-pair semiconductors was analyzed for (x = 0, 2, 4, 6, 8, 10) system. Values of lone pair electrons L were calculated using average coordination number of valence electrons. These values were found to decrease, as the system was moving towards the rigid region. L > 3 values showed vitreous state. Deviation of the stoichiometry confirmed the chalcogen-rich region. A linear correlation was found between the mean bond energy and glass transition temperature. Chemical Bond Approach model was applied to calculate the cohesive energy of the system. A linear re
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Pathak, Dinesh, Sanjay Kumar, Sonali Andotra, et al. "New tailored organic semiconductors thin films for optoelectronic applications." European Physical Journal Applied Physics 95, no. 1 (2021): 10201. http://dx.doi.org/10.1051/epjap/2021210090.

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In this study, we have investigated new tailored organic semiconductor materials for optoelectronic application, such as organic solar cells. The carbon-based organic semiconductor material has promising advantages in organic thin-film form. Moreover, due to its low cost, organic thin films are suitable and cheaper than inorganic thin-film. The bandgap of organic semiconductors materials can be tuned and mostly lies between 2.0 eV and 4 eV and the optical absorption edge of organic semiconductors typically lies in between 1.7 eV and 3 eV. They can be easily tailored by modifying the carbon cha
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R.I, Alekberov. "Boson peak and nanostructure of chalcogenide glass-like semiconductors." JOURNAL OF ADVANCES IN PHYSICS 6, no. 3 (2014): 1259–62. http://dx.doi.org/10.24297/jap.v6i3.6959.

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The structural features of As2Se3, As40Se30S30, As40Se30Te30, As33.3Se33.3S33.4, As33.3Se33.3Te33.4 chalcogenide glasses have been studied by Raman spectroscopy in low-energy region. The results are explained in view of nanostructure of samples, i.e. by presence of heterogeneity in samples at the nanometer scale and with change their size depending on the modification of the chemical composition.
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Dissertations / Theses on the topic "Glass for semiconductors"

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Shimer, Matthew Timothy. "Nonequilibrium Relaxation and Aging Scaling Properties of the Coulomb Glass and Bose Glass." Diss., Virginia Tech, 2011. http://hdl.handle.net/10919/28926.

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We use Monte Carlo simulations in order to investigate the density of states and the two-time density autocorrelation function for the two- and three-dimensional Coulomb glass as well as the Bose glass phase of flux lines in type-II superconductors. We find a very fast forming gap in the density of states and explore the dependence of temperature and filling fraction. By studying two scaling methods, we find that the nonequilibrium relaxation properties can be described sufficiently by a full-aging scaling analysis. The scaling exponents depend on both temperature and filling fraction, and are
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Assi, Hiba. "Non-Equilibrium Relaxation Dynamics in Disordered Superconductors and Semiconductors." Diss., Virginia Tech, 2016. http://hdl.handle.net/10919/70858.

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We investigate the relaxation properties of two distinct systems: magnetic vortex lines in disordered type-II superconductors and charge carriers in the Coulomb glass in disordered semiconductors. We utilize an elastic line model to simulate magnetic flux lines in disordered type-II superconductors by performing Langevin molecular dynamics simulations. We study the non-equilibrium relaxation properties of flux lines in the presence of uncorrelated point-like disorder or extended linear defects analyzing the effects of rapid changes in the system's temperature or magnetic field on these proper
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Malik, M. S. "Comparative studies of the electronic properties of copper tellurite glasses containing nickel, cobalt and lutetium oxides and cupric chloride." Thesis, Brunel University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235019.

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Gladden, L. F. "Structural studies of inorganic glasses." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233932.

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The present work has been concerned with a study of the structure of germanium and silicon dichalcogenide glasses. Initially, the aim of this research was to obtain direct structural evidence of reversible photostructural changes in bulk germanium chalcogenide glasses. However, having confirmed the existence of such changes using EXAFS and neutron scattering techniques, it became obvious that a more comprehensive understanding of the as-quenched, annealed glass structure is required before a valid interpretation of the data can be made; in particular, the extent of medium-range order in these
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Huang, Amy. "On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /." Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

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Bandyopadhyay, Tapobrata. "Modeling, design, and characterization of through vias in silicon and glass interposers." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42737.

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Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor and interconnect scaling. Further miniaturization by traditional IC scaling in future planar CMOS technology faces significant challenges. Stacking of ICs (3D IC) using three dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnect latency and power dissipation while reducing the size of the chip and enhancing performance. Interposer technology with ultra-fine pitch interconnections needs to be developed to support the huge I/O connection requirement f
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Manley, Robert G. "Development and modeling of a low temperature thin-film CMOS on glass /." Online version of thesis, 2009. http://hdl.handle.net/1850/11202.

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Shi, Lei Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Contact resistance study on polycrystalline silicon thin-film solar cells on glass." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41425.

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Thin-film solar cells are widely recognised to have the potential to compete with fossil fuels in the electricity market due to their low cost per peak Watt. The Thin-Film Group at the University of New South Wales (UNSW) is engaged in developing polycrystalline silicon (poly-Si) thin-film solar cells on glass using e-beam evaporation technology. We believe our solar cells have the potential of significantly lowering the manufacturing cost compared to conventional, PECVD-fabricated thin-film solar cells. After years of materials research, the focus of the Group??s work is now moving to the met
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Nitsche, Robert. "Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2006. http://nbn-resolving.de/urn:nbn:de:swb:14-1147356837431-39487.

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We have measured the optical properties of films of the organic semiconductors PTCDA (3,4:9,10-perylene-tetracarboxylic dianhydride) and HBC (peri-hexabenzocoronene), prepared by Organic Molecular Beam Expitaxy (OMBE), on different substrates by means of Differential Reflectance Spectroscopy (DRS). The optical setup enables us to directly follow the thickness dependent optical properties of the organic films, starting from submonolayer coverage up to thicker films on the order of 20 monolayers (ML) film thickness. Due to the different optical nature of the different substrates used, i.e., mica
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Nitsche, Robert. "Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films." Doctoral thesis, [S.l.] : [s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=979835186.

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Books on the topic "Glass for semiconductors"

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Minaev, V. S. Stekloobraznye poluprovodnikovye splavy. Metallurgii͡a︡, 1991.

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Vsesoi͡uznai͡a konferent͡sii͡a po fizike stekloobraznykh tverdykh tel (2nd 1991 Rīga, Latvia). Vtorai͡a Vsesoi͡uznai͡a konferent͡sii͡a po fizike stekloobraznykh tverdykh tel: Tezisy dokladov, 12-15 noi͡abri͡a 1991 goda. In-t fiziki Latviĭskoĭ AN, 1991.

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Šesták, Jaroslav. Glassy, Amorphous and Nano-Crystalline Materials: Thermal Physics, Analysis, Structure and Properties. Springer Science+Business Media B.V., 2011.

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4

F, Thorpe M., Mitkova M. I, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Study Institute on Amorphous Insulators and Semiconductors (1996 : Sozopol, Bulgaria), eds. Amorphous insulators and semiconductors. Kluwer Academic, 1997.

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Stekloobraznye poluprovodniki dli͡a︡ optoėlektroniki. "Shtiint͡s︡a", 1991.

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1942-, Popescu Mihai, ed. Fizica sticlelor calcogenice. Editura Științifică, 1996.

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Myuller, Rudol'f L. Electrical Conductivity of Vitreous Substances. Springer, 2014.

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(Editor), Robert Fairman, and Boris Ushkov (Editor), eds. Semiconducting Chalcogenide Glass II, Volume 79: Properties of Chalcogenide Glasses (Semiconductors and Semimetals). Academic Press, 2004.

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(Editor), Robert Fairman, and Boris Ushkov (Editor), eds. Semiconducting Chalcogenide Glass II, Volume 79: Properties of Chalcogenide Glasses (Semiconductors and Semimetals). Academic Press, 2004.

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Pak, Vyacheslav N., Tamara M. Burkat, and Yulia Yu Gavronskaya. Porous Glass and Nanostructured Materials. Nova Science Publishers, Incorporated, 2015.

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Book chapters on the topic "Glass for semiconductors"

1

Owen, A. E. "Electronic Transport in Amorphous Chalcogenide Semiconductors." In Glass … Current Issues. Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5107-5_32.

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Gutzow, I., and A. Dobreva. "Kinetics of Glass Formation." In Amorphous Insulators and Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8832-4_2.

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Andriesh, A. M. "Photoinduced Phenomena In Chalcogenide Glass Semiconductors." In Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5496-3_2.

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Zwanziger, J. W., K. K. Olsen, S. L. Tagg, and R. E. Youngman. "High Resolution and Multidimensional Nuclear Magnetic Resonance Probes of Glass Structure." In Amorphous Insulators and Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8832-4_11.

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Angell, C. A. "Strong and Fragile Liquids; Glass Transitions and Polyamorphic Transitions in Covalently Bonded Glassformers." In Amorphous Insulators and Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8832-4_1.

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Tanaka, Keiji. "Electronic Micro-Fabrication of Chalcogenide Glass." In Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5496-3_3.

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Ngai, K. L., and A. K. Rajagopal. "Conductivity Relaxations in the Electron Glass." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_156.

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Culeac, I. P. "The Peculiarities of Photoinduced Absorption in Chalcogenide Glass Fibres." In Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5496-3_39.

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Radvan, R., R. Savastru, D. Ghica, V. Bivol, A. Prisacari, and G. Triduh. "Fresnel Zone Plates on Chalcogenide Glass Without Chromatical Aberrations." In Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5496-3_52.

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Baskin, E. M., and M. V. Entin. "Hopping Mechanism of Coherent Photovoltaic Effect and Photoinduced Polar Anisotropy In Glass." In Coherent Control in Atoms, Molecules, and Semiconductors. Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4552-7_16.

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Conference papers on the topic "Glass for semiconductors"

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Mochizuki, Toshimitsu, Ryuichi Masutomi, Tohru Okamoto, Marília Caldas, and Nelson Studart. "Evidence for spin-glass ordering in submonolayer Fe films on InAs." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295476.

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Watekar, Pramod R., Seongmin Ju, Aoxiang Lin, Won-Taek Han, Jisoon Ihm, and Hyeonsik Cheong. "Two-photon Absorption Process in Germano-silica Glass Fiber Doped with PbSe Quantum-dots." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666718.

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Veinger, A. I. "Antiferromagnetic Spin Glass Ordering in the Vicinity of Insulator — Metal Transition in n-Ge:As." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994004.

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Pocha, Michael D., Henry E. Garrett, Rajesh R. Patel, et al. "Glass, plastic, and semiconductors: packaging techniques for miniature optoelectronic components." In BiOS 2000 The International Symposium on Biomedical Optics, edited by Raymond P. Mariella, Jr. SPIE, 2000. http://dx.doi.org/10.1117/12.379570.

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Lindberg, G. P., R. E. Tallman, S. Abbaszadeh, et al. "Frustration of photocrystallization in amorphous selenium films and film-polymer structures near the glass transition." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848264.

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McBrearty, Euan J., Paul Mason, David Orchard, Michael Harris, and Keith Lewis. "Optical bonding of high-refractive-index semiconductors using index-matched chalcogenide glass." In Optical Systems Design, edited by Claude Amra, Norbert Kaiser, and H. Angus Macleod. SPIE, 2004. http://dx.doi.org/10.1117/12.513577.

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Erlacher, Artur, Bruno Ullrich, Ryan J. Konopinski, and Heather J. Haugan. "Optical gate realization by laser crossing in thin-film semiconductors on glass." In Integrated Optoelectronic Devices 2005, edited by Shibin Jiang and Michel J. Digonnet. SPIE, 2005. http://dx.doi.org/10.1117/12.590760.

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Kobori, H., K. Ohnishi, A. Sugimura, and T. Taniguchi. "Drastic Magnetoresistance Enhancement on Spin-Dependent-Transport and Appearance of Spin-Glass-Like Behavior for Magnetite Nanoparticle Sinter Calcined at Low Temperature." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730359.

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Kume, E., H. Ishii, H. Hattori, W. H. Chang, M. Ogura, and T. Maeda. "Demonstration of InGaAs FETs on quartz glass toward terahertz applications." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528609.

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Horn, Alexander, Ilja Mingaeev, Alexander Werth, and Martin Kachel. "Joining of thin glass with semiconductors by ultra-fast high-repetition laser welding." In Lasers and Applications in Science and Engineering, edited by Wilhelm Pfleging, Yongfeng Lu, Kunihiko Washio, Willem Hoving, and Jun Amako. SPIE, 2008. http://dx.doi.org/10.1117/12.762337.

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Reports on the topic "Glass for semiconductors"

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Simmons, Joseph H. Quantum confinement, carrier dynamics and interfacial processes in nanostructured direct/indirect-gap semiconductor-glass composites. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/804905.

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Joseph H. Simmons. Quantum confinement, carrier dynamics and interfacial processes in nanostructured direct/indirect-gap semiconductor-glass composites. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/798742.

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