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Dissertations / Theses on the topic 'Glass for semiconductors'

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Published: 4 June 2021

Last updated: 8 February 2022

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1

Shimer, Matthew Timothy. "Nonequilibrium Relaxation and Aging Scaling Properties of the Coulomb Glass and Bose Glass." Diss., Virginia Tech, 2011. http://hdl.handle.net/10919/28926.

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We use Monte Carlo simulations in order to investigate the density of states and the two-time density autocorrelation function for the two- and three-dimensional Coulomb glass as well as the Bose glass phase of flux lines in type-II superconductors. We find a very fast forming gap in the density of states and explore the dependence of temperature and filling fraction. By studying two scaling methods, we find that the nonequilibrium relaxation properties can be described sufficiently by a full-aging scaling analysis. The scaling exponents depend on both temperature and filling fraction, and are

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2

Assi, Hiba. "Non-Equilibrium Relaxation Dynamics in Disordered Superconductors and Semiconductors." Diss., Virginia Tech, 2016. http://hdl.handle.net/10919/70858.

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We investigate the relaxation properties of two distinct systems: magnetic vortex lines in disordered type-II superconductors and charge carriers in the Coulomb glass in disordered semiconductors. We utilize an elastic line model to simulate magnetic flux lines in disordered type-II superconductors by performing Langevin molecular dynamics simulations. We study the non-equilibrium relaxation properties of flux lines in the presence of uncorrelated point-like disorder or extended linear defects analyzing the effects of rapid changes in the system's temperature or magnetic field on these proper

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3

Malik, M. S. "Comparative studies of the electronic properties of copper tellurite glasses containing nickel, cobalt and lutetium oxides and cupric chloride." Thesis, Brunel University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235019.

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4

Gladden, L. F. "Structural studies of inorganic glasses." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233932.

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The present work has been concerned with a study of the structure of germanium and silicon dichalcogenide glasses. Initially, the aim of this research was to obtain direct structural evidence of reversible photostructural changes in bulk germanium chalcogenide glasses. However, having confirmed the existence of such changes using EXAFS and neutron scattering techniques, it became obvious that a more comprehensive understanding of the as-quenched, annealed glass structure is required before a valid interpretation of the data can be made; in particular, the extent of medium-range order in these

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5

Huang, Amy. "On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /." Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

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6

Bandyopadhyay, Tapobrata. "Modeling, design, and characterization of through vias in silicon and glass interposers." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42737.

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Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor and interconnect scaling. Further miniaturization by traditional IC scaling in future planar CMOS technology faces significant challenges. Stacking of ICs (3D IC) using three dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnect latency and power dissipation while reducing the size of the chip and enhancing performance. Interposer technology with ultra-fine pitch interconnections needs to be developed to support the huge I/O connection requirement f

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7

Manley, Robert G. "Development and modeling of a low temperature thin-film CMOS on glass /." Online version of thesis, 2009. http://hdl.handle.net/1850/11202.

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8

Shi, Lei Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Contact resistance study on polycrystalline silicon thin-film solar cells on glass." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41425.

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Thin-film solar cells are widely recognised to have the potential to compete with fossil fuels in the electricity market due to their low cost per peak Watt. The Thin-Film Group at the University of New South Wales (UNSW) is engaged in developing polycrystalline silicon (poly-Si) thin-film solar cells on glass using e-beam evaporation technology. We believe our solar cells have the potential of significantly lowering the manufacturing cost compared to conventional, PECVD-fabricated thin-film solar cells. After years of materials research, the focus of the Group??s work is now moving to the met

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9

Nitsche, Robert. "Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2006. http://nbn-resolving.de/urn:nbn:de:swb:14-1147356837431-39487.

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We have measured the optical properties of films of the organic semiconductors PTCDA (3,4:9,10-perylene-tetracarboxylic dianhydride) and HBC (peri-hexabenzocoronene), prepared by Organic Molecular Beam Expitaxy (OMBE), on different substrates by means of Differential Reflectance Spectroscopy (DRS). The optical setup enables us to directly follow the thickness dependent optical properties of the organic films, starting from submonolayer coverage up to thicker films on the order of 20 monolayers (ML) film thickness. Due to the different optical nature of the different substrates used, i.e., mica

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Nitsche, Robert. "Optical Properties of Organic Semiconductors: from Submonolayers to Crystalline Films." Doctoral thesis, [S.l.] : [s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=979835186.

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11

Chen, Ping. "Intermediate phases, boson and floppy modes, and demixing of network structures of binary As-S and As-Se glasses." University of Cincinnati / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1250689099.

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12

Banyai, William Charles. "Optical nonlinearities in semiconductor doped glass channel waveguides." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184505.

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The nonlinear optical properties of a semiconductor-doped glass (SDG) channel waveguide were measured on a picosecond time-scale; namely, fluence-dependent changes in the absorption and the refractive index as well as the relaxation time of the nonlinearity. Slower, thermally-induced changes in the refractive index were also observed. The saturation of the changes in the absorption and the refractive index with increasing optical fluence is explained using a plasma model with bandfilling as the dominant mechanism. The fast relaxation time of the excited electron-hole plasma (20 ps) is explaine

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13

Gabel, Allan Harley. "Degenerate four wave mixing in semiconductor doped glass waveguides." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184367.

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This dissertation begins with a study of some of the linear and nonlinear optical properties of composite materials consisting of CdSₓSe₁₋ₓ microcrystallites embedded in a host glass matrix. These studies investigate changes in absorption, refractive index and nonlinear response time under a variety of experimental conditions. The data demonstrates that this class of materials exhibit: a strong saturation of absorption due to band filling; a large n₂ which also saturates; response times which range from <100ps to many nanoseconds; and a permanent darkening and change of n₂ induced by extended

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14

Kay, Michael. "The modelling of hydrogen in amorphous and glassy semiconductors." Thesis, University of Leicester, 1998. http://hdl.handle.net/2381/30609.

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The behaviour of hydrogen in crystalline and amorphous semiconductors has been simulated using the positive muon as a microscopic probe. Measurements have been made on a wide range of materials: polycrystalline and amorphous silicon, both doped and intrinsic; polycrystalline and amorphous germanium; crystalline CaAs and GaP; and selenium-based glassy chalcogenides. Using the techniques of SR (Muon Spin Resonance/Rotation/Relaxation/Repolarisation), the evolution of the spin polarisation of the muon is monitored. In semiconductors and insulators, the muon is bonded to an electron to form muoniu

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15

Kim, Min-Young. "Delay induced instabilities in coupled semiconductor lasers and Mackey-Glass electronic circuits." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2722.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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16

Irannejad, Mehrdad. "Fabrication and characterization of glass-semiconductor integrated waveguide amplifier by pulsed laser deposition." Thesis, University of Leeds, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.582113.

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The phosphate modified tellurite (PT) glasses were investigated for their potential applications of bulk glass and PLD films as glass-on-semiconductor integrated thin films for engineering a semiconductor pump source integrated waveguide amplification medium which can operate at a wavelength of 1500nm. High quality PT bulk glasses were used as PLD target for deposition of high quality thin films on the silica buffered GaAs substrate by using optimized deposition parameters; target-to- substrate distance, processing gas pressure, deposition temperature and laser energy. The propagation loss of

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17

De, Jode Martin L. "Optical nonlinear prism coupling to semiconductor-doped glass and organic MBA-NP waveguides." Thesis, University of Essex, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.236452.

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18

Fusari, Flavio. "Continuous wave and modelocked femtosecond novel bulk glass lasers operating around 2000 nm." Thesis, University of St Andrews, 2010. http://hdl.handle.net/10023/1694.

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This thesis reports on the development of glass-based femtosecond laser sources around 2 µm wavelength. In order to be able to produce 2 µm radiation the dopants used were trivalent Thulium (Tm³⁺) and trivalent Holmium (Ho³⁺) that could be optically pumped with Ti:Sapphire radiation at 0.8 µm and semiconductor disk lasers (SDL) at 1.2 µm. The samples were produced at Leeds University and polished in-house in bulk form and deployed in free space laser cavities. Tellurite compounds doped with Tm³⁺ produced stable continuous wave 1.94 µm radiation when pumped at 800 nm with a maximum efficiency o

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19

Ersoz, Tugce Irfan. "Application Of Semi Conductor Films Over Glass/ceramic Surfaces And Their Low Temperature Photocatalytic Activity." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/3/12610377/index.pdf.

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Semiconductor metal oxides can be induced by light with proper wavelength resulting in oxidation and reduction reactions for the transformation of water and oxygen molecules into active radicals. With this method, it is possible to obtain self-cleaning surfaces and products having antimicrobial properties. The aim of this study is to develop semiconductor metal oxide thin films for multifunctional glass products and the characterization of photocatalytic self cleaning and antimicrobial properties. As semiconductor metal oxides<br>titanium dioxide (TiO2), tin oxide (SnO2) and their binary mixt

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20

Šalucha, Darius. "Passivation of the p-n junction edge in high-power semiconductor silicon devices." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20090707_154834-90672.

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Thin dielectric passivation layer is one of the basic construction elements in semiconductor device technology. There are few materials, from which the layers may be manufactured. They are oxides mainly, with Si02 as the most popular of them, although, the phosphor- and boron-silicon glasses are used as passivation layers, too. In choosing a passivant of power thyristors and diodes, there are two important considerations in addition to the usual requirement for providing uniform high breakdown voltage via substrate. One consideration is the thermal stability of the passivant to subsequent high

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21

Wei, Shuai, Garrett J. Coleman, Pierre Lucas, and C. Austen Angell. "Glass Transitions, Semiconductor-Metal Transitions, and Fragilities in Ge-V-Te (V = As, Sb) Liquid Alloys: The Difference One Element Can Make." AMER PHYSICAL SOC, 2017. http://hdl.handle.net/10150/624356.

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Glass-transition temperatures (T-g) and liquid fragilities are measured along a line of constant Ge content in the system Ge-As-Te, and contrasted with the lack of glass-forming ability in the twin system Ge-Sb-Te at the same Ge content. The one composition established as free of crystal contamination in the latter system shows a behavior opposite to that of a more covalent system. The comparison of T-g vs bond density in the three systems Ge-As-chalcogen differing in chalcogen, i.e., S, Se, or Te, shows that as the chalcogen becomes more metallic, i.e.,in the order S < Se < Te, the bond-densi

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22

Vaney, Jean-Baptiste. "Contribution à l'étude des propriétés thermoélectriques de vitrocéramiques et verres de chalcogénures semi-conducteurs." Thesis, Université de Lorraine, 2014. http://www.theses.fr/2014LORR0115/document.

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Les matériaux thermoélectriques sont des matériaux capables de convertir l’énergie thermique en énergie électrique en exploitant l’effet Seebeck et vice-versa, en exploitant l’effet Peltier. Grâce à ces deux effets, il est possible de récupérer l’énergie perdue sous forme de chaleur dans la plupart des activités humaines (industrie, automobile,…) ou bien de produire du froid de manière efficace et silencieuse. Pour une efficacité optimale, il faut se tourner vers des matériaux qui possèdent simultanément une faible résistivité électrique, (rhô), une faible conductivité thermique (lambda) et un

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23

Acharya, Krishna Prasad. "Photocurrent Spectroscopy of CdS/Plastic, CdS/Glass, and ZnTe/GaAs Hetero-pairs Formed with Pulsed-laser Deposition." Bowling Green State University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1245089031.

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24

Cai, Bin. "Model Design and Analysis for Amorphous Materials." Ohio University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1311192632.

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25

Gonsalves, Peter Robert. "THE DESIGN AND FABRICATION OF A MICROFLUIDIC REACTOR FOR SYNTHESIS OF CADMIUM SELENIDE QUANTUM DOTS USING SILICON AND GLASS SUBSTRATES." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/720.

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A microfluidic reactor for synthesizing cadmium selenide (CdSe) quantum dots (QDs) was synthesized out of a silicon wafer and Pyrex glass. Microfabrication techniques were used to etch channels into the silicon wafer. Holes were wet-drilled into the Pyrex glass using a diamond-tip drill bit. The Pyrex wafer was anodically bonded to the etched silicon wafer to enclose the microfluidic reactor. Conditions for anodic bonding were created by exposing the stacked substrates to 300V at ~350oC under 5.46N of force. A syringe containing a room temperature CdSe solution was interfaced to the microfluid

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26

Pelati, Daniel. "Elaboration of GaAs solar cells based on textured substrates on glass." Electronic Thesis or Diss., Sorbonne université, 2019. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2019SORUS456.pdf.

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Les cellules solaires à base de GaAs détiennent le record d’efficacité pour les architectures à simple jonction, mais le coût des substrats GaAs monocristallins restreint fortement leur utilisation. Dans ce travail, nous avons fabriqué des substrats alternatifs pour la croissance de GaAs, basés sur la combinaison d’un support en silice et d’un film mince (20 nm) de Germanium. Ce dernier est presque à l’accord de maille avec le GaAs et on peut obtenir une texture (111) prononcée en utilisant le procédé de cristallisation induite par un métal (MIC). La texture cristalline est très dépendante des

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27

Guiheneuf, Vincent. "Approche multi-physique du vieillissement des matériaux pour application photovoltaïque." Thesis, Paris Est, 2017. http://www.theses.fr/2017PESC1091/document.

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Cette thèse explore le vieillissement des modules photovoltaïques (PV) à base de silicium cristallin via une approche multi-matériaux. L’objectif premier est de déterminer les mécanismes de dégradation mis en jeu durant l’exploitation des modules PV et ainsi d’être à même de proposer des solutions technologiques améliorant leur durabilité. Pour cela, des tests de vieillissement accéléré ont été réalisés sur le verre, la cellule PV au silicium cristallin et le mini-module PV composé du verre, d’un polymère encapsulant et de la cellule silicium.Leurs propriétés fonctionnelles sont systématiqueme

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Saiter, Jean-Marc. "Coordinence des atomes de bismuth dans les alliages amorphes de sélénium bismuth : étude par relaxation structurelle et mesure de conductivité." Rouen, 1986. http://www.theses.fr/1986ROUES022.

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La relaxation structurale a été étudiée par analyse thermique différentielle. Les mesures de conductivité permettent d'expliquer l'inversion des porteurs majoritaires observée dans SeBi lorsque la quantité de Bi croît

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Pomarede, Damien. "Fibres optiques vitrocéramiques pour application laser." Thesis, Limoges, 2018. http://www.theses.fr/2018LIMO0019/document.

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Cette thèse porte sur le développement de fibres optiques de type cœur/gaine, dont le cœur est composé de vitrocéramiques transparentes. Le système étudié est composé d’une matrice de silice stabilisant la phase ZnGa2O4 sous la forme de nano cristaux, pouvant être dopés par des ions de métaux de transition tels que le chrome (III) et le nickel (II). Les verres précurseurs de vitrocéramiques ont été synthétisés par fusion trempe, étirés sous forme de fibres optiques par la méthode poudre puis recuits thermiquement afin d’obtenir des fibres optiques à cœur vitrocéramiques optiquement actives. L’

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Barilero, Gilles. "Etude de quelques proprietes magnetooptiques et magnetiques des semiconducteurs semimagnetiques zn : :(1-x)mn::(x)te et hg::(1-x)mn::(x)te." Paris 6, 1987. http://www.theses.fr/1987PA066084.

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L'effet d'echange entre les electrons de bande et les electrons d des ions manganese modifie les produits electroniques des alliages de zn dans un champ magnetique. L'effet zeeman de l'exciton permet de determiner la valeur des integrales d'echange de la bande de valence et de la bande de conduction dans ces composes. La presence d'interactions magnetiques entre les ions manganese est responsable des proprietes magnetiques. Les courbes d'aimantation des alliages dilues pour x5% en champ intense, a basse temperature, permettent de determiner la constante d'echange entre ions mn 1er voisins. Les

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Tchangai, Tchaa. "Caracterisation electrique des films de polyamide-imide et de leurs interfaces avec un substrat semiconducteur." Toulouse 3, 1988. http://www.theses.fr/1988TOU30101.

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Preparation de couches minces par pelliculage sur substrat de verre metallique ou semiconducteur. L'adherence se fait par des liaisons chimiques; les films resistent a la gravure par plasma fluore. Mecanisme de la conduction electrique

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Lavastre, Eric. "Déclenchement des microlasers solides émettant à 1,55 µm par un dispositif à semiconducteur." Université Joseph Fourier (Grenoble ; 1971-2015), 1998. http://www.theses.fr/1998GRE10173.

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Les microlasers emettant a 1,55 m sont des lasers solides de faible volume (<1 mm#3) a base de verre : er, yb dont les miroirs de la cavite sont directement deposes sur le milieu a gain. En introduisant un modulateur dans la cavite, il est possible de declencher le laser afin d'obtenir des impulsions de puissance crete elevee donc exploitables pour des applications telles que la telemetrie. L'objet de cette these est d'utiliser un dispositif a semiconducteur comme modulateur. De par leurs proprietes optiques et electriques, les semiconducteurs presentent un fort potentiel pour le declenchement

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Atmani, Hassane. "Investigations dans le domaine des comportements thermiques de matériaux désordonnés : application au sélénium et aux mélanges Se-Bi à faible concentration en bismuth." Rouen, 1988. http://www.theses.fr/1988ROUES009.

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Langa, Dolly Frans. "Comparison of the structural properties of a-Si:H and CulnSe₂ on glass and flexible substrates." Thesis, 2012. http://hdl.handle.net/10210/4540.

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M.Sc.<br>Thin film solar cells based on polycrystalline indium diselenide (CulnSe₂) and amorphous silicon (a-Si:H) are promising candidates for the efficient conversion of sunlight into useable, cheap electrical energy. However, typical device structures are rather complex and consists of semiconductor/metal contacts as well as complicated p - n and p - i - n heterojunctions. In this study, CulnSe₂ absorber layers with excellent material properties were prepared by the selenization of metallic alloys. The a-Si:H thin films were deposited by radio frequency (RF) glow discharge in vacuum. The po

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Chen, Li-Yin. "Study of Ambipolar Charge Transport in Organic Semiconductors Having Liquid Crystal Glass and Amorphous Phases." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-3001200815392100.

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Gharleghi, Ahmad, and 阿美德. "Wet chemicals synthesis and thermoelectric properties of cobalt skutterudites semiconductors towards the electron-crystal phonon-glass materials." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/4emj24.

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博士<br>國立彰化師範大學<br>物理學系<br>102<br>This dissertation presents experimental practices conducted to study the effect of synthesis methods on the thermoelectric properties of n-type cobalt skutterudite. In this effort, wet chemical preparation procedures are adopted. The produced powders are characterized using x-ray diffraction pattern, scanning electron microscopy, Hall and density measurements. The Seebeck coefficient (thermopower), electrical and thermal conductivity measurements are performed for all the fabricated samples. Various reaction conditions have been carried out to stabilize the CoS

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(9116285), Daniel A. Wilcox. "ESTABLISHING THE OPTOELECTRONIC INTERACTIONS BETWEEN CONJUGATED POLYMERS AND ORGANIC RADICALS." Thesis, 2020.

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<div> Design rules and application spaces for closed-shell conjugated polymers have been well established in the field of organic electronics, and this has allowed for significant breakthroughs to occur in myriad device platforms [e.g., organic field-effect transistors (OFETs) and organic light-emitting devices (OLEDs)]. Conversely, organic electronic materials that are based on the emerging design motif that includes open-shell stable radicals have not been evaluated in such detail, despite the promise these materials show for charge transfer, light-emission, and spin manipulation platforms.

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Prashanth, S. B. Bhanu. "Development Of Instrumentation For Electrical Switching Studies And Investigations On Switching And Thermal Behavior Of Certain Glassy Chalcogenides." Thesis, 2008. http://hdl.handle.net/2005/735.

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The absence of long-range order in glassy chalcogenides provides the convenience of changing the elemental ratios and hence the properties over a wide range. The interesting properties exhibited by chalcogenide glasses make them suitable materials for Phase Change Memories (PCM) and other applications such as infrared optical devices, photo-receptors, sensors, waveguides, etc. One of the most remarkable properties of chalcogenides is their electrical switching behavior. Reversible (threshold type) or irreversible (memory type) switching from a high resistance OFF state to a low resistance ON

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Chu, Chih Wen, and 朱治文. "Material Characterization for Semiconductor Spin-on Glass Process." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/88351232619886754623.

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碩士<br>中國文化大學<br>應用化學研究所<br>86<br>Abstract SOG technique is widely used in local planarization process insemiconductor manufacturing. In this study, three different kinds of SOGsolutions was characterized for evaluating their application potentials:Allied Signal SOG-314, SG1~SG4 from Chung-Shan Institute and newlysynthesized SOG from our laboratory. The SOG soultions were characterized by viscosity meaurement and then spun coated to becomethin films. Next, FTIR, refractive index and f

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Tu, Yi-Lien, and 杜宜蓮. "Nonlinear absorption in CdS semiconductor microcrystallines doped phosphorous glass." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/89562584013643879802.

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碩士<br>高雄醫學大學<br>醫藥暨應用化學系碩士班<br>93<br>Cadmium sulfide ( at room temperature) embedded in phosphorous glass is prepared by a melt and heat-treatment method. A large amount of these nanocrystals appear as dark ball shape with radius roughly ranging from 5 to 20 nm by the TEM analysis. A Q-switched Nd:YAG laser delivery linearly polarized pulses at 532 and 1064 nm wavelength with ~6 nanosecond pulse width are employed as light source for the nonlinear absorption experiments. For our 532 nm incident pulses with , the nonlinear attenuation can be attributed to the two photon absorption (TPA)

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Teng, Kun-Tang, and 鄧崑堂. "Development research for the heater of Semiconductor ceramic glass." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/13164387439085284487.

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碩士<br>中華大學<br>機械與航太工程研究所<br>92<br>As the fast scientific development in new industry technology and application of new materials. The design of new product will be basis of small, light and thin targets. During the technology development, I’ll follow this direction to make temperature heater by using semi-ceramic glass technique. In order to resist corrosion, high temperature and friction, the heat plating process technology have some advantages like enhancing physical properties in raw material and strengthening the organization of material surface.

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Chaung, R. C., and 莊瑞建. "Study of doped Semiconductor Microcrystals in glass by Raman Scattering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/27044675504337761945.

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碩士<br>輔仁大學<br>物理研究所<br>83<br>CdSxSe1-x semiconductor microcrystals doped in glasses are variation of the composition x lesds to variable absorption on the whole spectrum used in commerical filters. We showed how Raman optical-mode peak positons can be used in a straightforward way to determine the microcrystals composition in CdSxSe1-x microcrystals doped in glasses. For a given composition, we showed the shift of the Raman peak positon to the higher frequency when the diameter of the CdSxS

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Hu, Sheng-Jeng, and 胡勝傑. "Nonlinear absorption and photoluminescence in CuCl semiconductor microcrystallines doped borosilicate glass." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/17660319784306539179.

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碩士<br>高雄醫學大學<br>醫藥暨應用化學系碩士班<br>93<br>Cuprous halides nanocrystals embedded in borosilicate glass are prepared by a melt and heat-treatment method. A large amount of these nanocrystals appear as dark ball shape with radius roughly ranging from 4 to 15 nm according to the TEM analysis. A Q-switched Nd:YAG laser delivery linearly polarized pulses at 355 nm wavelength ( ) with ~6 ns pulse width is employed as light source for the nonlinear absorption and the photoluminescence (PL) experiments. The two photon absorption (TPA) coefficient and the free carrier absorption (FCA) cross section a

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Wang, Jen-Hua, and 王貞華. "Nonlinear absorption and photoluminescence in CuBr semiconductor microcrystallines doped borosilicate glass." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/08945305253970296259.

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碩士<br>高雄醫學大學<br>醫藥暨應用化學系碩士班<br>93<br>Cuprous halides nanocrystals embedded in borosilicate glass are prepared by a melt and heat-treatment method. A large amount of these nanocrystals appear as dark ball shape with radius roughly ranging from 4 to 15 nm according to the TEM analysis. A Q-switched Nd:YAG laser delivery linearly polarized pulses at 355 nm wavelength (ηω ≈ 3.49 eV) with ~6 ns pulse width is employed as light source for the nonlinear absorption and the photoluminescence (PL) experiments. The two photon absorption (TPA) coefficient β and the free carrier absorption (FCA) cross se

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Jou, Wen-Yuan, and 周文元. "Nonlinear absorption and photoluminescence in CuI semiconductor microcrystallines doped borosilicate glass." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/55517763804275278413.

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碩士<br>高雄醫學大學<br>醫藥暨應用化學系碩士班<br>93<br>Cuprous halides nanocrystals embedded in borosilicate glass are prepared by a melt and heat-treatment method. A large amount of these nanocrystals appear as dark ball shape with radius roughly ranging from 4 to 15 nm according to the TEM analysis. A Q-switched Nd:YAG laser delivery linearly polarized pulses at 355 nm wavelength ( ) with ~6 ns pulse width is employed as light source for the nonlinear absorption and the photoluminescence (PL) experiments. The two photon absorption (TPA) coefficient and the free carrier absorption (FCA) cross section a

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46

Chen, Ming-Fa, and 陳明發. "The Characterization and Growth of II-VI Semiconductor Doped Glass Thin Films." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/23646607849016297709.

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碩士<br>國立交通大學<br>光電(科學)研究所<br>83<br>II-VI semiconductor-doped noncrystalline glass targets were prepared by sol-gel method. The targets were deposited as thin films by using RF sputtering or pulsed laser evaporation to obtian mocro-crystalline glass of highter doping percentage and smaller particle size; therefore the quantum size effect will be more distinct. In our experiment,pure CdS thin films and CdS- doped glass thin films were made by RF sputtering, while the ZnSe-doped glass thin fil

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Pattanayak, Pulok. "Thermal And Electrical Properties Of Silver And Iodine Doped Chalcogenide Glasses." Thesis, 2008. http://hdl.handle.net/2005/865.

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Silver containing chalcogenide glasses have been extensively studied during the last few decades; the main interest in these materials being their electrical conductivity which changes by several orders of magnitude upon silver doping. Glassy chalcogenides doped with silver have applications in optical elements, gratings, micro-lenses, waveguides, bio & chemical sensors, solid electrolytes, batteries, etc. Chalcohalide glasses have become important in the recent times, from both scientific & technological points of view, due to the interesting properties exhibited by these glasses such as the

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茅一超. "Optical Properties of ZnO-SiO2 and ZnO-SiNx Semiconductor-doped Glass Thin Films Prepared by Sputtering Method." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/25019660852926674115.

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碩士<br>國立交通大學<br>材料科學與工程系所<br>94<br>The target-attachment sputtering method was adopted to prepare the ZnO-SiNx semiconductor-doped glass (SDG) samples (called ZSN system) and their luminescence properties, composition and microstructures were characterized. The experimental results of ZSN system were compared with those of ZnO-SiO2 SDG samples (called ZSO system) obtained previously so that the luminance properties of nano-sized ZnO particles embedded in different matrixes can be understood. As revealed by TEM analysis, spherical ZnO nanoparticles about 5 ~ 10 nm in diameter uniformly disperse

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Shen, Sheng-Chieh, and 沈聖傑. "Metal-Insulator-Semiconductor Schottky Diode-Type Low Cost Solar Cell with Low Temperature Poly-silicon (LTPS) on Glass Substrate." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/14656673209482296248.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>96<br>This thesis reported to fabricate Metal-Insulator-Semiconductor (MIS) Schottky diode-type low cost solar cell with excimer laser annealed (ELA) low temperature poly-silicon (LTPS) on glass substrate. In the cell, the TiO2 thin film was employed as insulator layer. We investigated physical and optical characteristics of the LTPS and TiO2 thin films by FE-SEM, AFM, Hall measurement, XRD, and Spectra Pro500.In addition, the HP4145 was employed for measurement of current gain, Jsc, Voc, fill factor and efficiency. The electrical characteristics of the LTPS thin

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Suyal, Ganesh [Verfasser]. "Synthesis of nanocomposite glass-like films containing semiconductor nanocrystals and noble bimetallic colloids by sol-gel route and their characterisation / von Ganesh Suyal." 2002. http://d-nb.info/964814498/34.

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