Academic literature on the topic 'Graphene NanoRibbon'

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Journal articles on the topic "Graphene NanoRibbon"

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Zhang, Ji, Tarek Ragab, and Cemal Basaran. "Comparison of fracture behavior of defective armchair and zigzag graphene nanoribbons." International Journal of Damage Mechanics 28, no. 3 (March 27, 2018): 325–45. http://dx.doi.org/10.1177/1056789518764282.

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Molecular dynamics simulations of armchair graphene nanoribbons and zigzag graphene nanoribbons with different sizes were performed at room temperature. Double vacancy defects were introduced in each graphene nanoribbon at its center or at its edge. The effect of defect on the mechanical behavior was studied by comparing the stress–strain response and the fracture toughness of each pair of pristine and defective graphene nanoribbon. Results show that the effect of vacancies in zigzag graphene nanoribbon is more profound than in armchair graphene nanoribbon. Also, the effect of double vacancy defect on the ultimate failure stress is greater in zigzag graphene nanoribbons than in armchair graphene nanoribbon due to bond orientation with respect to loading direction. Strength reduction can be as high as 17.5% in armchair graphene nanoribbon with no significant difference between single and double vacancies, while for zigzag graphene nanoribbon, the strength reduction is up to 30% for single vacancy and 43% for double vacancy defects. It is observed that for zigzag graphene nanoribbon with double vacancy at the edge, the direction of the failure plane is oriented at ±30° with respect to the loading direction while it is always perpendicular to the direction of loading in armchair graphene nanoribbon. Results have been verified through studying the fracture toughness parameters in each case as well.
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Barkov, Pavel V., and Olga E. Glukhova. "Carboxylated Graphene Nanoribbons for Highly-Selective Ammonia Gas Sensors: Ab Initio Study." Chemosensors 9, no. 4 (April 18, 2021): 84. http://dx.doi.org/10.3390/chemosensors9040084.

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The character and degree of influence of carboxylic acid groups (COOH) on the sensory properties (particularly on the chemoresistive response) of a gas sensor based on zigzag and armchair graphene nanoribbons are shown. Using density functional theory (DFT) calculations, it is found that it is more promising to use a carboxylated zigzag nanoribbon as a sensor element. The chemoresistive response of these nanoribbons is higher than uncarboxylated and carboxylated nanoribbons. It is also revealed that the wet nanoribbon reacts more noticeably to the adsorption of ammonia. In this case, carboxyl groups primarily attract water molecules, which are energetically favorable to land precisely on these regions and then on the nanoribbon’s basal surface. Moreover, the COOH groups with water are adsorption centers for ammonia molecules. That is, the carboxylated zigzag nanoribbon can be the most promising.
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Савин, А. В., and М. А. Мазо. "Двумерная модель рулонных упаковок молекулярных нанолент." Физика твердого тела 60, no. 4 (2018): 821. http://dx.doi.org/10.21883/ftt.2018.04.45700.318.

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AbstractA simplified model of the in-plane molecular chain, allowing the description of folded and scrolled packings of molecular nanoribbons of different structures, is proposed. Using this model, possible steady states of single-layer nanoribbons scrolls of graphene, graphane, fluorographene, and fluorographane (graphene hydrogenated on the one side and fluorinated on the other side) are obtained. Their stability is demonstrated and their energy is calculated as a function of the nanoribbon length. It is shown that the scrolled packing is the most energetically favorable nanoribbon conformation at long lengths. The existences of scrolled packings for fluorographene nanoribbons and the existence of two different scroll types corresponding to left- and right-hand Archimedean spirals for fluorographane nanoribbons in the chain model are shown for the first time. The simplicity of the proposed model makes it possible to consider the dynamics of scrolls of rather long molecular nanoribbons at long enough time intervals.
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Kolli, Venkata Sai Pavan Choudary, Vipin Kumar, Shobha Shukla, and Sumit Saxena. "Electronic Transport in Oxidized Zigzag Graphene Nanoribbons." MRS Advances 2, no. 02 (2017): 97–101. http://dx.doi.org/10.1557/adv.2017.55.

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ABSTRACT The electronic and transport properties of graphene nanoribbons strongly depends on different types of adatoms. Oxygen as adatom on graphene is expected to resemble oxidized graphene sheets and enable in understanding their transport properties. Here, we report the transport properties of oxygen adsorbed zigzag edge saturated graphene nanoribbon. It is interesting to note that increasing the number of oxygen adatoms on graphene sheets lift the spin degeneracy as observed in the transmission profile of graphene nanoribbons. The relative orientation of the oxygen atom on the graphene basal plane is detrimental to flow of spin current in the nanoribbon.
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Guo, Hong, and Jing Wang. "Effect of Vacancy Defects on the Vibration Frequency of Graphene Nanoribbons." Nanomaterials 12, no. 5 (February 24, 2022): 764. http://dx.doi.org/10.3390/nano12050764.

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Graphene is a type of two-dimensional material with special properties and complex mechanical behavior. In the process of growth or processing, graphene inevitably has various defects, which greatly influence the mechanical properties of graphene. In this paper, the mechanical properties of ideal monolayer graphene nanoribbons and monolayer graphene nanoribbons with vacancy defects were simulated using the molecular dynamics method. The effect of different defect concentrations and defect positions on the vibration frequency of nanoribbons was investigated, respectively. The results show that the vacancy defect decreases the vibration frequency of the graphene nanoribbon. The vacancy concentration and vacancy position have a certain effect on the vibration frequency of graphene nanoribbons. The vibration frequency not only decreases significantly with the increase of nanoribbon length but also with the increase of vacancy concentration. As the vacancy concentration is constant, the vacancy position has a certain effect on the vibration frequency of graphene nanoribbons. For nanoribbons with similar dispersed vacancy, the trend of vibration frequency variation is similar.
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Tian, Wenchao, and Wenhua Li. "Molecular Dynamics Study on Vibrational Properties of Graphene Nanoribbon Resonator." Journal of Computational and Theoretical Nanoscience 13, no. 10 (October 1, 2016): 7460–66. http://dx.doi.org/10.1166/jctn.2016.5740.

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The vibrational properties of nanoelectromechanical system (NMES) resonator based on the defect-free graphene nanoribbon are investigated via classic molecular dynamics simulations. The graphene nanoribbons show ultrahigh fundamental resonant frequencies which can reach 189.6 GHz. The resonant frequencies increase non-monotonically with increasing externally applied force. When the external forces are between 15.912 nN and 44.2 nN, the resonant frequencies of the graphene nanoribbons remain constant at 132.9 GHz. And when the external stress is greater than 44.2 nN, the resonant frequencies show an incremental variation tendency. Temperature has a little influence on resonant frequencies. When the temperature is greater than 75 K, the resonant frequencies of the graphene nanoribbons remain constant at 132.9 GHz. The resonant characteristics of graphene nanoribbons are insensitive to the chirality. The resonant frequencies of the graphene nanoribbon exhibit significant decrease as the length-width ratio increases.
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Савин, А. В. "Краевые колебания нанолент графана." Физика твердого тела 60, no. 5 (2018): 1029. http://dx.doi.org/10.21883/ftt.2018.05.45808.328.

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AbstractUsing the COMPASS force field, natural linear vibrations of graphane (graphene hydrogenated on both sides) nanoribbons are simulated. The frequency spectrum of a graphane sheet consists of three continuous intervals (low-frequency, mid-frequency, and narrow high-frequency) and two gaps between them. The construction of dispersion curves for nanoribbons with a zigzag and chair structure of the edges show that the frequencies of edge vibrations (edge phonons) can be present in the gaps of the frequency spectrum. In the first type of nanoribbons, two dispersion curves are in the low-frequency gap of the spectrum and four dispersion curves in the second gap. These curves correspond to phonons moving only along the nanoribbon edges (the mean depth of their penetration toward the nanoribbon center does not exceed 0.15 nm).
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Kalosakas, George, Nektarios N. Lathiotakis, and Konstantinos Papagelis. "Width Dependent Elastic Properties of Graphene Nanoribbons." Materials 14, no. 17 (September 3, 2021): 5042. http://dx.doi.org/10.3390/ma14175042.

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The mechanical response of graphene nanoribbons under uniaxial tension, as well as its dependence on the nanoribbon width, is presented by means of numerical simulations. Both armchair and zigzag edged graphene nanoribbons are considered. We discuss results obtained through two different theoretical approaches, viz. density functional methods and molecular dynamics atomistic simulations using empirical force fields especially designed to describe interactions within graphene sheets. Apart from the stress-strain curves, we calculate several elastic parameters, such as the Young’s modulus, the third-order elastic modulus, the intrinsic strength, the fracture strain, and the Poisson’s ratio versus strain, presenting their variation with the width of the nanoribbon.
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Paudel, Raj Kumar, Chung-Yuan Ren, and Yia-Chung Chang. "Semi-Empirical Pseudopotential Method for Graphene and Graphene Nanoribbons." Nanomaterials 13, no. 14 (July 13, 2023): 2066. http://dx.doi.org/10.3390/nano13142066.

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We implemented a semi-empirical pseudopotential (SEP) method for calculating the band structures of graphene and graphene nanoribbons. The basis functions adopted are two-dimensional plane waves multiplied by several B-spline functions along the perpendicular direction. The SEP includes both local and non-local terms, which were parametrized to fit relevant quantities obtained from the first-principles calculations based on the density-functional theory (DFT). With only a handful of parameters, we were able to reproduce the full band structure of graphene obtained by DFT with a negligible difference. Our method is simple to use and much more efficient than the DFT calculation. We then applied this SEP method to calculate the band structures of graphene nanoribbons. By adding a simple correction term to the local pseudopotentials on the edges of the nanoribbon (which mimics the effect caused by edge creation), we again obtained band structures of the armchair nanoribbon fairly close to the results obtained by DFT. Our approach allows the simulation of optical and transport properties of realistic nanodevices made of graphene nanoribbons with very little computation effort.
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Savin A. V. and Klinov A. P. "Delamination of multilayer graphene nanoribbons on flat substrates." Physics of the Solid State 64, no. 10 (2022): 1573. http://dx.doi.org/10.21883/pss.2022.10.54252.390.

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Using molecular dynamics simulation, we have shown that multilayer graphene nanoribbons located on the flat surface of the h-BN crystal (on the flat substrate) delaminate due to thermal activation into a parquet of single-layer nanoribbons on the substrate. The delamination of graphene nanoribbons requires overcoming the energy barrier associated with the initial shift of its upper layer. After overcoming the barrier, the delamination proceeds spontaneously with the release of energy. The value of this barrier has been estimated and the delamination of two-layer nanofilms has been simulated. The existence of two delamination scenarios has been shown. The first scenario is the longitudinal (along the long side of the nanoribbon) sliding of the upper layer. The second one is in the sliding of the upper layer with the rotation of the layers relative to each other. The first scenario is common for elongated nanoribbons, the second --- for two-layer graphene flakes having close to a square shape. Keywords: graphene, multilayer nanoribbons, flat substrate, nanoribbon delamination.
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Dissertations / Theses on the topic "Graphene NanoRibbon"

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Yu, Wenlong. "Infrared magneto-spectroscopy of graphite and graphene nanoribbons." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/54244.

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The graphitic systems have attracted intensive attention recently due to the discovery of graphene, a single layer of graphite. The low-energy band structure of graphene exhibits an unusual linear dispersion relation which hosts massless Dirac fermions and leads to intriguing electronic and optical properties. In particular, due to the high mobility and tunability, graphene and graphitic materials have been recognized as promising candidates for future nanoelectronics and optoelectronics. Electron-phonon coupling (EPC) plays a significant role in electronic and optoelectronic devices. Therefore, it is crucial to understand EPC in graphitic materials and then manipulate it to achieve better device performance. In the first part of this thesis, we explore EPC between Dirac-like fermions and infrared active phonons in graphite via infrared magneto-spectroscopy. We demonstrate that the EPC can be tuned by varying the magnetic field. The second part of this thesis deals with magnetoplasmons in quasineutral graphene nanoribbons. Multilayer epitaxial graphene grown on the carbon terminated silicon carbide surface behaves like single layer graphene. Plasmons are excited in the nanoribbons of undoped multilayer epitaxial graphene. In a magnetic field, the cyclotron resonance can couple with the plasmon resonance forming the so-called upperhybrid mode. This mode exhibits a distinct dispersion relation, radically different from that expected for conventional two dimensional systems.
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Paulla, Kirti Kant. "Conductance Modulation in Bilayer Graphene Nanoribbons." Wright State University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=wright1253023785.

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Xu, Zhen. "On-surface synthesis of two-dimensional graphene nanoribbon networks." Kyoto University, 2020. http://hdl.handle.net/2433/254529.

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Li, Ke. "Sub-Lithographic Patterning of Ultra-Dense Graphene Nanoribbon Arrays." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250545004.

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Panapitiya, Gihan Uthpala. "Electronic Properties of Graphene and Boron Nitride Nanoribbon Junctions." University of Akron / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=akron1382986572.

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Akbari, Mahmood. "Uniaxial Strain Effect on Graphene-Nanoribbon Resonant Tunneling Transistors." Master's thesis, University of Cape Town, 2018. http://hdl.handle.net/11427/29314.

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Graphene is an atomically thin two-dimensional (2-D) crystal with unique thermal, mechanical, and electronic transport properties such as the high mobility of carriers, perfect 2- D confinement and linear dispersion, etc., has been attracted many interest as a promising candidate for nano-scale devices over the past decades. Multilayer stacks of graphene and other stable, atomically thin, 2-D materials offer the prospect of creating a new class of heterostructure materials. Hexagonal boron- nitride (hBN), is a great candidate to be stacked with graphene due to an atomically 2-D layered structure with a lattice constant very similar to graphene (1.8% mismatch), large electrical band gap (∼4.7eV), and excellent thermal and chemical stability. The graphene/hBN based tunneling transistors show the resonant tunneling and strong negative differential resistance (NDR). These devices which have potential for future high-frequency and logic applications such as high-speed IC circuits, signal generators, data storage, etc., has been studied both theoretically and experimentally recently. The aim in this dissertation has been to study the effect of the uniaxial strain on the graphene nanoribbon resonant tunneling transistors (RTTs). The uniaxial strain may be induced either by an external stress applied to the graphene in a particular direction or by a substrate due to deposition of graphene on top of the other materials. The strain modifies distances between carbon atoms which leading to different hopping amplitudes among neighboring sites. A resonant tunneling transistor consisting of armchair graphene nanoribbon (AGNR) electrodes with three layers of hBN tunnel barrier between them has been considered. By using the nearest-neighbor tight-bind (TB) method and the nonequilibrium Green function (NEGF) formalism, the electronic transport characteristics of a RTT is calculated. In this work, we focus on how the strain affects the current-voltage characteristics of AGNR/hBN RTT.
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Reynolds, Jamie Dean. "Fabrication and characterisation of CVD-graphene nanoribbon single electron transistors." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/419476/.

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Graphene was the first 2 dimensional material discovered and rapidly received a lot of attention because of its astounding properties. It is still the highest conductivity material recorded and very robust despite its single atomic layer thickness. However a key issue with graphene has been that it is a semimetal and not a semiconductor, so it lacks a band gap. Originally a large amount of focus was on researching methods to overcome this issue for logic devices. At first the patterning into nanoribbons was seen as a method to achieve this, but the fabrication of a nanoribbon came at a cost of graphene’s high mobility electrons. From conducting this research an interesting property of graphene emerged. It was capable of acting intrinsically as a single electron transistor, enabling a different type of more than Moore device to be fabricated that can be used in future nanoelectronic applications. The aim of this project has been to investigate the transport properties of polycrystalline graphene grown using chemical vapour deposition. The use of polycrystalline graphene enables the fabrication of wafer scale devices that can be stacked on a large variety of surfaces. So far though there has been a lack of investigation into the scaling effects of polycrystalline graphene nanoribbons and the single electron tunnelling properties associated with them. This work presents the first detailed investigation into their properties and shows that polycrystalline graphene can be used for producing high quality single electron transistors. Nanoribbons are fabricated down to sub 20 nm widths with high aspect ratio transitions from wide to narrow segments. The single electron transistor has demonstrated a single quantum dot impacted by the effect of energy level spacing.
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Dale, Joel Kelly. "Electric field lines and voltage potentials associated with graphene nanoribbon." Thesis, University of Iowa, 2013. https://ir.uiowa.edu/etd/2471.

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Graphene can be used to create circuits that are almost superconducting, potentially speeding electronic components by as much as 1000 times [1]. Such blazing speed might also help produce ever-tinier computing devices with more power than your clunky laptop [2]. Graphite is a polymorph of the element carbon [3]. Graphite is made up of tiny sheets of graphene. Graphene sheets stack to form graphite with an interplanar spacing of 0.335 nm, which means that a stack of 3 million sheets would be only one millimeter thick. [1] This nano scale 2 dimensional sheet is graphene. Novoselov and Geim's discovery is now the stuff of scientific legend, with the two men being awarded the Nobel Prize in 2010 [4]. In 2004, two Russian-born scientists at the University of Manchester stuck Scotch tape to a chunk of graphite, then repeatedly peeled it back until they had the tiniest layer possible [2]. Graphene has exploded on the scene over the past couple of years. "Six years ago, it didn't exist at all, and next year we know that Samsung is planning to release their first mobile-phone screens made of graphene." - Dr Kostya Novoselov [4]. It is a lattice of hexagons, each vertex tipped with a carbon atom. At the molecular level, it looks like chicken wire [4]. There are two common lattice formations of graphene, armchair and zigzag. The most studied edges, zigzag and armchair, have drastically different electronic properties. Zigzag edges can sustain edge surface states and resonances that are not present in the armchair case Rycerz et al., 2007 [5]. This research focused on the armchair graphene nanoribbon formation (acGNR). Graphene has several notable properties that make it worthy of research. The first of which is its remarkable strength. Graphene has a record breaking strength of 200 times greater than steel, with a tensile strength of 130GPa [1]. Graphene has a Young's modulus of 1000, compared to just that of 150 for silicon [1]. To put it into perspective, if you had a sheet of graphene as thick as a piece of cellophane, it would support the weight of a car. [2] If paper were as stiff as graphene, you could hold a 100-yard-long sheet of it at one end without its breaking or bending. [2] Another one of graphene's attractive properties is its electronic band gap, or rather, its lack thereof. Graphene is a Zero Gap Semiconductor. So it has high electron mobility at room temperature. It's a Superconductor. Electron transfer is 100 times faster than Silicon [1]. With zero a band gap, in the massless Dirac Fermion structure, the graphene ribbon is virtually lossless, making it a perfect semiconductor. Even in the massive Dirac Fermion structure, the band gap is 64meV [6]. This research began, as discussed in Chapter 2, with an armchair graphene nanoribbon unit cell of N=8. There were 16 electron approximation locations (ψ) provided per unit cell that spanned varying Fermi energy levels. Due to the atomic scales of the nanoribbon, the carbon atoms are separated by 1.42Å. The unit vector is given as, ~a = dbx, where d = 3αcc and αcc = 1.42°A is the carbon bond length [5]. Because of the close proximity of the carbon atoms, the 16 electron approximations could be combined or summed with their opposing lattice neighbors. Using single line approximation allowed us to reduce the 16 points down to 8. These approximations were then converted into charge densities (ρ). Poisson's equation, discussed in Chapter 3, was expanded into the 3 dimensional space, allowing us to convert ρ into voltage potentials (φ). Even though graphene is 2 dimensional; it can be used nicely in 3 dimensional computations without the presence of a substrate, due to the electric field lines and voltage potential characteristics produced being 3 dimensional. Subsequently it was found that small graphene sheets do not need to rest on substrates but can be freely suspended from a scaffolding; furthermore, bilayer and multilayer sheets can be prepared and characterized.
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Imperiale, Ilaria <1982&gt. "Numerical Modelling of Graphene Nanoribbon-fets for Analog and Digital Applications." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2012. http://amsdottorato.unibo.it/4949/1/Imperiale_Ilaria_tesi.pdf.

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Graphene, that is a monolayer of carbon atoms arranged in a honeycomb lattice, has been isolated only recently from graphite. This material shows very attractive physical properties, like superior carrier mobility, current carrying capability and thermal conductivity. In consideration of that, graphene has been the object of large investigation as a promising candidate to be used in nanometer-scale devices for electronic applications. In this work, graphene nanoribbons (GNRs), that are narrow strips of graphene, for which a band-gap is induced by the quantum confinement of carriers in the transverse direction, have been studied. As experimental GNR-FETs are still far from being ideal, mainly due to the large width and edge roughness, an accurate description of the physical phenomena occurring in these devices is required to have valuable predictions about the performance of these novel structures. A code has been developed to this purpose and used to investigate the performance of 1 to 15-nm wide GNR-FETs. Due to the importance of an accurate description of the quantum effects in the operation of graphene devices, a full-quantum transport model has been adopted: the electron dynamics has been described by a tight-binding (TB) Hamiltonian model and transport has been solved within the formalism of the non-equilibrium Green's functions (NEGF). Both ballistic and dissipative transport are considered. The inclusion of the electron-phonon interaction has been taken into account in the self-consistent Born approximation. In consideration of their different energy band-gap, narrow GNRs are expected to be suitable for logic applications, while wider ones could be promising candidates as channel material for radio-frequency applications.
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Imperiale, Ilaria <1982&gt. "Numerical Modelling of Graphene Nanoribbon-fets for Analog and Digital Applications." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2012. http://amsdottorato.unibo.it/4949/.

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Graphene, that is a monolayer of carbon atoms arranged in a honeycomb lattice, has been isolated only recently from graphite. This material shows very attractive physical properties, like superior carrier mobility, current carrying capability and thermal conductivity. In consideration of that, graphene has been the object of large investigation as a promising candidate to be used in nanometer-scale devices for electronic applications. In this work, graphene nanoribbons (GNRs), that are narrow strips of graphene, for which a band-gap is induced by the quantum confinement of carriers in the transverse direction, have been studied. As experimental GNR-FETs are still far from being ideal, mainly due to the large width and edge roughness, an accurate description of the physical phenomena occurring in these devices is required to have valuable predictions about the performance of these novel structures. A code has been developed to this purpose and used to investigate the performance of 1 to 15-nm wide GNR-FETs. Due to the importance of an accurate description of the quantum effects in the operation of graphene devices, a full-quantum transport model has been adopted: the electron dynamics has been described by a tight-binding (TB) Hamiltonian model and transport has been solved within the formalism of the non-equilibrium Green's functions (NEGF). Both ballistic and dissipative transport are considered. The inclusion of the electron-phonon interaction has been taken into account in the self-consistent Born approximation. In consideration of their different energy band-gap, narrow GNRs are expected to be suitable for logic applications, while wider ones could be promising candidates as channel material for radio-frequency applications.
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Books on the topic "Graphene NanoRibbon"

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Amiri, Iraj Sadegh, and Mahdiar Ghadiry. Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-6550-7.

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Müllen, Klaus, and Xinliang Feng, eds. From Polyphenylenes to Nanographenes and Graphene Nanoribbons. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-64170-6.

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Das, Debaprasad. Carbon Nanotube and Graphene Nanoribbon Interconnects. CRC Press, 2014. http://dx.doi.org/10.1201/b17853.

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Carbon Nanotube and Graphene Nanoribbon Interconnects. Taylor & Francis Group, 2014.

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Rahaman, Hafizur, and Debaprasad Das. Carbon Nanotube and Graphene Nanoribbon Interconnects. Taylor & Francis Group, 2014.

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Rahaman, Hafizur, and Debaprasad Das. Carbon Nanotube and Graphene Nanoribbon Interconnects. Taylor & Francis Group, 2017.

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Rahaman, Hafizur, and Debaprasad Das. Carbon Nanotube and Graphene Nanoribbon Interconnects. Taylor & Francis Group, 2017.

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Rahaman, Hafizur, and Debaprasad Das. Carbon Nanotube and Graphene Nanoribbon Interconnects. Taylor & Francis Group, 2017.

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Rahaman, Hafizur, and Debaprasad Das. Carbon Nanotube and Graphene Nanoribbon Interconnects. Taylor & Francis Group, 2017.

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Rahaman, Hafizur, and Debaprasad Das. Carbon Nanotube and Graphene Nanoribbon Interconnects. Taylor & Francis Group, 2017.

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Book chapters on the topic "Graphene NanoRibbon"

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Marmolejo-Tejada, Juan M., Jaime Velasco-Medina, and Andres Jaramillo-Botero. "Graphene Nanoribbon Devices." In Sub-Micron Semiconductor Devices, 281–98. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003126393-17.

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Tanachutiwat, Sansiri, and Wei Wang. "Exploring Multi-layer Graphene Nanoribbon Interconnects." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, 49–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02427-6_10.

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Lam, Kai-Tak, and Gengchiau Liang. "Electronic Structure of Bilayer Graphene Nanoribbon and Its Device Application: A Computational Study." In Graphene Nanoelectronics, 509–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22984-8_16.

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Kanthamani, S. "Variants of Graphene Nanoribbon (GNR) Interconnects for THz Applications." In Recent Advances in Graphene Nanophotonics, 55–68. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-28942-2_3.

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Shan, G. C., C. H. Shek, and M. J. Hu. "Developments of Cavity-Controlled Devices with Graphene and Graphene Nanoribbon for Optoelectronic Applications." In Graphene Science Handbook, 395–410. Boca Raton, FL : CRC Press, Taylor & Francis Group, 2016. | “2016: CRC Press, 2016. http://dx.doi.org/10.1201/b19642-24.

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Tripathy, S. K., J. K. Singh, and G. M. Prasad. "Bilayer Graphene Nanoribbon Transistor for Butane Gas Detection." In Lecture Notes in Electrical Engineering, 359–65. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-2710-4_29.

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Das, Subrata, Debesh Kumar Das, and Soumya Pandit. "Reliability Aware Global Routing of Graphene Nanoribbon Based Interconnect." In Communications in Computer and Information Science, 373–86. Cham: Springer Nature Switzerland, 2022. http://dx.doi.org/10.1007/978-3-031-21514-8_31.

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Liu, Xiaoyi. "Defect-Induced Discontinuous Effects in Graphene Nanoribbon Under Torsion Loading." In Springer Theses, 55–69. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-8703-6_5.

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Zeng, Hui, Jun Zhao, Jianwei Wei, Dahai Xu, and J. P. Leburton. "Controllable Tuning of the Electronic Transport in Pre-designed Graphene Nanoribbon." In Physical Models for Quantum Wires, Nanotubes, and Nanoribbons, 463–73. New York: Jenny Stanford Publishing, 2023. http://dx.doi.org/10.1201/9781003219378-36.

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Ramesh Kumar, Vobulapuram, Uppu Madhu Sai Lohith, Shaik Javid Basha, and M. Ramana Reddy. "Bilayer Graphene Nanoribbon Tunnel FET for Low-Power Nanoscale IC Design." In Energy Systems in Electrical Engineering, 83–100. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7937-0_5.

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Conference papers on the topic "Graphene NanoRibbon"

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Hassan, Asif, Moinul Hossain, Syed A. Sobhan, M. Refatul Haq, and Tanvir Ahamed Siddiquee. "Armchair graphene nanoribbon photonics." In 2015 Science and Information Conference (SAI). IEEE, 2015. http://dx.doi.org/10.1109/sai.2015.7237282.

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Habib, K. M. M., A. Khitun, A. A. Balandin, and R. K. Lake. "Graphene nanoribbon crossbar nanomesh." In 2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH). IEEE, 2011. http://dx.doi.org/10.1109/nanoarch.2011.5941488.

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Thornhill, Stephen, Nathanael Wu, Z. F. Wang, Q. W. Shi, and Jie Chen. "Graphene nanoribbon field-effect transistors." In 2008 IEEE International Symposium on Circuits and Systems - ISCAS 2008. IEEE, 2008. http://dx.doi.org/10.1109/iscas.2008.4541381.

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Ogawa, Shinpei, Shoichiro Fukushima, Satoshi Okuda, and Masaaki Shimatani. "Graphene nanoribbon photogating for graphene-based infrared photodetectors." In Infrared Technology and Applications XLVII, edited by Gabor F. Fulop, Masafumi Kimata, Lucy Zheng, Bjørn F. Andresen, and John Lester Miller. SPIE, 2021. http://dx.doi.org/10.1117/12.2585287.

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Hosokawa, H., H. Ando, and H. Tsuchiya. "Performance Potentials of Bilayer Graphene and Graphene Nanoribbon FETs." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.j-3-3.

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Choudhury, Mihir, Youngki Yoon, Jing Guo, and Kartik Mohanram. "Technology exploration for graphene nanoribbon FETs." In the 45th annual conference. New York, New York, USA: ACM Press, 2008. http://dx.doi.org/10.1145/1391469.1391539.

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Amin, Nazmul, Mushita Masnd Munia, Abu Mohammad Saffat-Ee Huq, and Mahbub Alam. "Phonon-Dephasing in Armchair Graphene Nanoribbon." In 2018 10th International Conference on Electrical and Computer Engineering (ICECE). IEEE, 2018. http://dx.doi.org/10.1109/icece.2018.8636753.

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Yoon, Youngki, Yijian Ouyang, and Jing Guo. "Scaling Behaviors of Graphene Nanoribbon FETs." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373750.

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Bhattacharya, Sandip, Subhajit Das, Debaprasad Das, and Hafizur Rahaman. "Electrical transport in graphene nanoribbon interconnect." In 2014 2nd International Conference on Devices, Circuits and Systems (ICDCS). IEEE, 2014. http://dx.doi.org/10.1109/icdcsyst.2014.6926148.

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Gadjeva, Elissaveta, Petya Popova, Marin Hristov, and George Angelov. "Computer modeling of graphene nanoribbon interconnects." In 2017 40th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2017. http://dx.doi.org/10.1109/isse.2017.8000948.

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Reports on the topic "Graphene NanoRibbon"

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Su, Justin, Changxin Chen, Ming Gong, and Michael Kenney. Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering. Office of Scientific and Technical Information (OSTI), January 2017. http://dx.doi.org/10.2172/1338246.

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Fischer, Felix, Danny Haberer, Tomas Marangoni, Francesca Toma, Gregory Veber, Dharati Joshi, Ryan Cloke, Rebecca Durr, Wade Perkins, and Cameron Rogers. Atomically Defined Edge-Doping of Graphene Nanoribbons for Mesoscale Electronics. Office of Scientific and Technical Information (OSTI), July 2019. http://dx.doi.org/10.2172/1542610.

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