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Journal articles on the topic 'Graphene Schottky Diode'

Author: Grafiati

Published: 14 March 2023

Last updated: 31 July 2025

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1

Rahmani, Meisam, Razali Ismail, Mohammad Taghi Ahmadi, et al. "The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance." Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/636239.

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Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentrati

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2

Labed, Madani, Nouredine Sengouga та You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer". Nanomaterials 12, № 5 (2022): 827. http://dx.doi.org/10.3390/nano12050827.

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Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, an

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3

Mohd Saman, Rahimah, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, and Mohd Ismahadi Syono. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications." Applied Sciences 9, no. 8 (2019): 1587. http://dx.doi.org/10.3390/app9081587.

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Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CN

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4

Ashour, A., M. Saqr, M. AbdelKarim, A. Gamal, A. Sharaf, and M. Serry. "Schottky Diode Graphene Based Sensors." International Journal on Smart Sensing and Intelligent Systems 7, no. 5 (2020): 1–4. http://dx.doi.org/10.21307/ijssis-2019-097.

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5

Shtepliuk, Ivan, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, and Rositsa Yakimova. "Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals." Beilstein Journal of Nanotechnology 7 (November 22, 2016): 1800–1814. http://dx.doi.org/10.3762/bjnano.7.173.

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A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of t

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6

Dub, Maksym, Pavlo Sai, Aleksandra Przewłoka, et al. "Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures." Materials 13, no. 18 (2020): 4140. http://dx.doi.org/10.3390/ma13184140.

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Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold curren

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7

Seven, Elanur, Elif Öz Orhan, and Sema Bilge Ocak. "Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation." Physica Scripta 96, no. 12 (2021): 125852. http://dx.doi.org/10.1088/1402-4896/ac369f.

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Abstract The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structur

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8

Luo, Lin-Bao, Shun-Hang Zhang, Rui Lu, et al. "p-type ZnTe:Ga nanowires: controlled doping and optoelectronic device application." RSC Advances 5, no. 18 (2015): 13324–30. http://dx.doi.org/10.1039/c4ra14096f.

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9

Maccagnani, Piera, and Marco Pieruccini. "Impact of Surface States in Graphene/p-Si Schottky Diodes." Materials 17, no. 9 (2024): 1997. http://dx.doi.org/10.3390/ma17091997.

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Graphene–silicon Schottky diodes are intriguing devices that straddle the border between classical models and two-dimensional ones. Many papers have been published in recent years studying their operation based on the classical model developed for metal–silicon Schottky diodes. However, the results obtained for diode parameters vary widely in some cases showing very large deviations with respect to the expected range. This indicates that our understanding of their operation remains incomplete. When modeling these devices, certain aspects strictly connected with the quantum mechanical features

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10

Selvi, Hakan, Nawapong Unsuree, Eric Whittaker, et al. "Towards substrate engineering of graphene–silicon Schottky diode photodetectors." Nanoscale 10, no. 7 (2018): 3399–409. http://dx.doi.org/10.1039/c7nr09591k.

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We present a systematic study of the performance of graphene–silicon Schottky diode photodetectors under varying operating conditions, demonstrating the influence of the substrate and interfacial oxide layer.

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11

Selvi, Hakan, Ernie W. Hill, Patrick Parkinson, and Tim J. Echtermeyer. "Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors." Nanoscale 10, no. 40 (2018): 18926–35. http://dx.doi.org/10.1039/c8nr05285a.

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12

Shen, Lingyan, Xinhong Cheng, Zhongjian Wang, et al. "Passivation effect of graphene on AlGaN/GaN Schottky diode." RSC Advances 5, no. 105 (2015): 86593–97. http://dx.doi.org/10.1039/c5ra12550b.

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13

Zhu, Miao, Li Zhang, Xinming Li, et al. "TiO2 enhanced ultraviolet detection based on a graphene/Si Schottky diode." Journal of Materials Chemistry A 3, no. 15 (2015): 8133–38. http://dx.doi.org/10.1039/c5ta00702j.

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14

Kumar, Ashish, Arathy Varghese, Shriniwas Yadav, Mahanth Prasad, Vijay Janyani, and R. P. Yadav. "Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics." Journal of Nanoscience and Nanotechnology 21, no. 5 (2021): 3165–70. http://dx.doi.org/10.1166/jnn.2021.19084.

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The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been de

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15

Lee, Youngmin, Deuk Young Kim, and Sejoon Lee. "Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity." Nanomaterials 9, no. 5 (2019): 799. http://dx.doi.org/10.3390/nano9050799.

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The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO2/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.61 eV and an ideality factor of 1.16. Under UV illumination, the device exhibited the excellent photo

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16

Apicella, Valerio, Teslim Ayinde Fasasi, Shu Wang, Sipeng Lei, and Antonio Ruotolo. "A Multilayer‐Graphene/Silicon Infrared Schottky Photo‐Diode." Advanced Electronic Materials 5, no. 12 (2019): 1900594. http://dx.doi.org/10.1002/aelm.201900594.

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17

Shaharin, Fadzli Abd Rahman, Anati Salleh Nurul, Shafinaz Zainal Abidin Mastura, and Nawabjan Amirjan. "Humidity effect on electrical properties of graphene oxide back-to-back Schottky diode." TELKOMNIKA Telecommunication, Computing, Electronics and Control 17, no. 5 (2019): 2427–33. https://doi.org/10.12928/TELKOMNIKA.v17i5.12800.

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A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be asso

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18

Periyanagounder, Dharmaraj, Paulraj Gnanasekar, Purushothaman Varadhan, Jr-Hau He, and Jeganathan Kulandaivel. "High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode." Journal of Materials Chemistry C 6, no. 35 (2018): 9545–51. http://dx.doi.org/10.1039/c8tc02786b.

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In this work, we design and demonstrate a graphene/silicon (Gr/Si) van der Walls (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias.

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19

Rahmani, Meisam, M. T. Ahmadi, Razali Ismail, and M. H. Ghadiry. "Performance of Bilayer Graphene Nanoribbon Schottky Diode in Comparison with Conventional Diodes." Journal of Computational and Theoretical Nanoscience 10, no. 2 (2013): 323–27. http://dx.doi.org/10.1166/jctn.2013.2699.

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20

Serry, M., A. Sharaf, A. Emira, A. Abdul-Wahed, and A. Gamal. "NANOSTRUCTURED GRAPHENE−SCHOTTKY JUNCTION LOW−BIAS RADIATION SENSORS." Sensors and Actuators A: Physical 232 (August 25, 2015): 329–40. https://doi.org/10.5281/zenodo.30536.

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We present a key idea of using the graphene-based Schottky junction to achieve high sensitivity and wide detection range radiation sensors. Nanostructured Schottky junction is formed at the interface between a graphene, metal electrode, and a semiconductor. The current flowing through the junction is mainly controlled by the barrier’s height and width. Therefore, the detection principle is based on Schottky barrier height (SBH) modulation in response to different materials and stimuli. We have illustrated the concept for gamma (γ) radiation sensors. It’s demonstrated that the

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21

Kiat, Wong King, Razali Ismail, and M. Taghi Ahmadi. "The Potential Barrier of Graphene Nanoribbon Based Schottky Diode." Journal of Nanoelectronics and Optoelectronics 8, no. 3 (2013): 281–84. http://dx.doi.org/10.1166/jno.2013.1467.

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22

Khairir, Nur Samihah, Mohd Rofei Mat Hussin, Iskhandar Md Nasir, A. S. M. Mukhter Uz-Zaman, Wan Fazlida Hanim Abdullah, and Ahmad Sabirin Zoolfakar. "Study of Reduced Graphene Oxide for Trench Schottky Diode." IOP Conference Series: Materials Science and Engineering 99 (November 19, 2015): 012031. http://dx.doi.org/10.1088/1757-899x/99/1/012031.

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23

Pandey, Rajiv K., Arun Kumar Singh, and Rajiv Prakash. "Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode." AIP Advances 3, no. 12 (2013): 122120. http://dx.doi.org/10.1063/1.4860952.

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24

Orhan, Elif Oz, Esra Efil, Ozkan Bayram, et al. "3D-graphene-laser patterned p-type silicon Schottky diode." Materials Science in Semiconductor Processing 121 (January 2021): 105454. http://dx.doi.org/10.1016/j.mssp.2020.105454.

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25

Singh, Amol, Md Ahsan Uddin, Tangali Sudarshan, and Goutam Koley. "Tunable Reverse-Biased Graphene/Silicon Heterojunction Schottky Diode Sensor." Small 10, no. 8 (2013): 1555–65. http://dx.doi.org/10.1002/smll.201302818.

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26

Jabbar Fraih, Ali, Muneer H. Jaduaa Alzubaidy, and Salman Rasool Salman. "Thermal Effects on the Electrical Performance of Multilayer Graphene/Silicon Schottky Diodes." Journal of Physics: Conference Series 2974, no. 1 (2025): 012010. https://doi.org/10.1088/1742-6596/2974/1/012010.

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Abstract The graphene-silicon junction (GSJ), as a 2D/3D hybrid junction, has recently received great attention due to the distinctive properties of graphene and thus it has become of great importance in the manufacture and application of optoelectronic devices (Schottky diode). In this study, samples of graphene and silicon were initially manufactured using a layer of graphene and negative-type silicon (n-type) and samples were manufactured containing two and three layers of graphene. The structural properties of the samples were studied using (SEM), Raman spectroscopy, and (AFM). The results

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27

Siti, Nadiah Che Azmi, Fadzli Abd Rahman Shaharin, and Manaf Hashim Abdul. "Back-to-Back Schottky Diode from Vacuum Filtered and Chemically Reduced Graphene Oxide." Indonesian Journal of Electrical Engineering and Computer Science 10, no. 3 (2018): 897–904. https://doi.org/10.11591/ijeecs.v10.i3.pp897-904.

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This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reduction process,

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28

Khurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, et al. "Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode." Superlattices and Microstructures 91 (March 2016): 306–12. http://dx.doi.org/10.1016/j.spmi.2016.01.029.

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29

Heo, J., H. J. Song, K. E. Byun, D. S. Seo, and S. Park. "(Invited) Graphene Based Tunable Schottky Diode for High Performance Devices." ECS Transactions 53, no. 1 (2013): 101–6. http://dx.doi.org/10.1149/05301.0101ecst.

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30

Halder, Soumi, Baishakhi Pal, Arka Dey, et al. "Effect of graphene on improved photosensitivity of MoS2-graphene composite based Schottky diode." Materials Research Bulletin 118 (October 2019): 110507. http://dx.doi.org/10.1016/j.materresbull.2019.110507.

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31

Noroozi, Ali Akbar, and Yaser Abdi. "A graphene/Si Schottky diode for the highly sensitive detection of protein." RSC Advances 9, no. 34 (2019): 19613–19. http://dx.doi.org/10.1039/c9ra03765a.

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32

Koziarskyi, I. P., M. I. Ilashchuk, I. G. Orletskyi, et al. "I-V-characteristics of Schottky diodes based on graphene/n-Si heterostructures." Technology and design in electronic equipment, no. 1-2 (2023): 3–8. http://dx.doi.org/10.15222/tkea2023.1-2.03.

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The authors investigated the electrical properties of graphene/n-Si Schottky diode heterostructures obtained by mechanical exfoliation of graphite to thin-layer graphene in an aqueous solution of polyvinylpyrrolidone as a result of the dynamics of the dispersed graphite mixture under the action of a mechanical blender. The graphene/n-Si structures differed in terms of duration of applying graphene films on n-Si substrates: 5, 10 and 15 min. The temperature of the substrates did not exceed 250°C. The formation of graphene layers was confirmed by the study of Raman scattering spectra in the freq

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33

Che Azmi, Siti Nadiah, Shaharin Fadzli Abd Rahman, and Abdul Manaf Hashim. "Back-to-Back Schottky Diode from Vacuum Filtered and Chemically Reduced Graphene Oxide." Indonesian Journal of Electrical Engineering and Computer Science 10, no. 3 (2018): 897. http://dx.doi.org/10.11591/ijeecs.v10.i3.pp897-904.

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<span>This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reducti

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34

Khurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, et al. "Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode." JSTS:Journal of Semiconductor Technology and Science 15, no. 1 (2015): 7–15. http://dx.doi.org/10.5573/jsts.2015.15.1.007.

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35

Berktaş, Zeynep, Mustafa Yıldız, Elanur Seven, Elif Oz Orhan, and Şemsettin Altındal. "PEI N-doped graphene quantum dots/p-type silicon Schottky diode." FlatChem 36 (November 2022): 100436. http://dx.doi.org/10.1016/j.flatc.2022.100436.

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36

Yagmurcukardes, N., H. Aydın, M. Can, et al. "Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance." ECS Journal of Solid State Science and Technology 5, no. 7 (2016): M69—M73. http://dx.doi.org/10.1149/2.0141607jss.

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37

Fattah, Ali, and Saeid Khatami. "Selective H2S Gas Sensing With a Graphene/n-Si Schottky Diode." IEEE Sensors Journal 14, no. 11 (2014): 4104–8. http://dx.doi.org/10.1109/jsen.2014.2334064.

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38

Azmi, Siti Nadiah Che, Shaharin Fadzli Abd Rahman, Amirjan Nawabjan, and Abdul Manaf Hashim. "Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes." Microelectronic Engineering 196 (September 2018): 32–37. http://dx.doi.org/10.1016/j.mee.2018.04.020.

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39

Uddin, Md Ahsan, Amol Singh, Kevin Daniels, Thomas Vogt, M. V. S. Chandrashekhar, and Goutam Koley. "Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors." Japanese Journal of Applied Physics 55, no. 11 (2016): 110312. http://dx.doi.org/10.7567/jjap.55.110312.

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40

Kırsoy, A., M. Ahmetoglu, M. Okutan, and F. Yakuphanoglu. "Electrical Properties Inorganic-on-Organic Hybrid GaAs/Graphene Oxide Schottky Barrier Diode." Journal of Nanoelectronics and Optoelectronics 11, no. 1 (2016): 108–14. http://dx.doi.org/10.1166/jno.2016.1884.

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41

Seol, Jeong-Hoon, Sang-Bum Kang, Chang-Ju Lee, et al. "Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands." IEEE Sensors Journal 16, no. 18 (2016): 6903–7. http://dx.doi.org/10.1109/jsen.2016.2594185.

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42

Khurelbaatar, Zagarzusem, Yeon-Ho Kil, Hyung-Joong Yun, et al. "Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer." Journal of Alloys and Compounds 614 (November 2014): 323–29. http://dx.doi.org/10.1016/j.jallcom.2014.06.132.

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43

Sultan, Muhammad Shehzad, Ernesto Espada Nazario, Bianca S. Umpierre Ramos, et al. "High Performance Self-Powered UV Photodetector Based on Nitrogen-Doped Graphene Quantum Dot Schottky Diode." ECS Meeting Abstracts MA2024-02, no. 11 (2024): 1479. https://doi.org/10.1149/ma2024-02111479mtgabs.

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We report a straightforward bottom-up approach for the synthesis of high-quality nitrogen-doped graphene quantum dots (NGQDs). This approach is cost-effective, environmentally friendly, and suitable for the production of high-quality NGQDs on a large scale. The as-synthesized NGQDs have high crystalline quality with an average size of 3.26 nm, are water soluble, and show strong fluorescence. The UV-vis spectra indicate that N-doping introduces new energy levels into the electronic structure of graphene, which tune the optical properties, resulting in a photoluminescence quantum yield (PLQY) of

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44

Efil Kutluoğlu, Esra, Elif Öz Orhan, Özkan Bayram, and Sema Bilge Ocak. "Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode." Physica B: Condensed Matter 621 (November 2021): 413306. http://dx.doi.org/10.1016/j.physb.2021.413306.

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45

Kutluoğlu, Esra Efil, Elif Öz Orhan, Adem Tataroğlu, and Özkan Bayram. "Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode." Physica Scripta 96, no. 12 (2021): 125836. http://dx.doi.org/10.1088/1402-4896/ac2af5.

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46

Kiat, Wong King, Razali Ismail, and M. Taghi Ahmadi. "Contact Effect on the Current–Voltage Characteristic of Graphene Nanoribbon Based Schottky Diode." Journal of Computational and Theoretical Nanoscience 12, no. 3 (2015): 478–83. http://dx.doi.org/10.1166/jctn.2015.3756.

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47

Nourbakhsh, Amirhasan, Mirco Cantoro, Afshin Hadipour, et al. "Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode." Applied Physics Letters 97, no. 16 (2010): 163101. http://dx.doi.org/10.1063/1.3495777.

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48

Abd Rahman, Shaharin Fadzli, Nurul Anati Salleh, Mastura Shafinaz Zainal Abidin, and Amirjan Nawabjan. "Humidity effect on electrical properties of graphene oxide back-to-back Schottky diode." TELKOMNIKA (Telecommunication Computing Electronics and Control) 17, no. 5 (2019): 2427. http://dx.doi.org/10.12928/telkomnika.v17i5.12800.

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49

Lee, Hwauk, Namhyun An, Seockjin Jeong, et al. "Strong dependence of photocurrent on illumination-light colors for ZnO/graphene Schottky diode." Current Applied Physics 17, no. 4 (2017): 552–56. http://dx.doi.org/10.1016/j.cap.2017.02.001.

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50

Hong, Sang-Hyun, and Jang-Won Kang. "Plasmonic Enhancement of UV Photoresponse in Graphene/ZnO Schottky Diode with Pt Nanoparticles." Applied Science and Convergence Technology 31, no. 6 (2022): 133–36. http://dx.doi.org/10.5757/asct.2022.31.6.133.

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