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Dissertations / Theses on the topic 'Grow temperature'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Asare-Yeboah, Kyeiwaa. "Temperature gradient approach to grow preferentially-oriented tips pentacene crystals for organic thin film transistors." Thesis, The University of Alabama, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10006922.

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<p> As a functionalized pentacene, 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) is a p-type organic semiconductor with remarkable intrinsic charge carrier transport and stability in ambient conditions. TIPS pentacene is soluble in most organic solvents, making it solution processable. TIPS pentacene, nonetheless, inherently forms acutely anisotropic crystals with large gaps in between the crystals, limiting charge transport and leading to vast variations in organic thin film transistor (OTFT) performance. Described in this dissertation are crystal growth techniques implemented

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2

Silva, Vanessa Silva da. "Expressão diferencial da proteína internalina A em Listeria monocytogenes do sorotipo 4b de diferentes origens em caldos de enriquecimento seletivos e não-seletivos." Universidade Federal de Pelotas, 2011. http://guaiaca.ufpel.edu.br/handle/123456789/1200.

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Made available in DSpace on 2014-08-20T13:32:45Z (GMT). No. of bitstreams: 1 dissertacao_vanessa_silva_da_silva.pdf: 492130 bytes, checksum: 6301288f1de4d9363b332a15a2ad0a6e (MD5) Previous issue date: 2011-11-28<br>Listeria monocytogenes is an infectious microorganism causing listeriosis, a foodborne illness affecting immunocompromised, pregnant, elderly and childrens. Pathogenic to men and animals is found naturally in the environment and has the ability to multiply on adverse conditions such as high salinity and chilling temperatures. However, their detection in food is difficult becaus

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Cheung, Terence Chi-Hin 1980. "Room temperature transport measurements on Bridgman-grown Culn₁-xGaxSe₂." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=97879.

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Filamentary samples were cut from ingots of the chalcopynte semiconductor CuIn1-x,GaxSe2, grown by a vertical Bridgman method for compositions x = 0, 0.2, and 0.3. On these, room-temperature measurements were made of thermoelectric power (alpha), Hall coefficient (RH), and electrical conductivity (sigma). Analysis of the measured results was made on a two-carrier basis, taking the minority electrons into account. Assuming dominant acoustic lattice scattering and an effective hole mass ratio, m p/m0 = 0.7, the only common acceptable value for the electron-to-hole mobility ratio, b, was found to

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4

Juodawlkis, Paul W. "Low-temperature-grown InGaAs quantum wells for optical device applications." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/13752.

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5

Loka, Hany. "Ultrafast all-optical switching using low-temperature-grown gallium arsenide." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq41462.pdf.

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6

Dong, Shuhong. "Effects of Thermal Gradient and Cyclic Oxidation on the Delamination and Lifetime of High Temperature Protective Coatings." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/38334.

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Thermal barrier coatings have been widely used to provide thermal protection to components in the hot section of gas turbines. This research focuses on two influencing factors on coating behavior: thermal gradient and cyclic oxidation. The delamination mechanics under thermal gradient is analyzed, taking thermally grown oxide into consideration. Coatings experience thermal gradients at different stages during actual service flight. One is due to engine power shut down when landing and the other due to internal cooling of the substrate. Thermally grown oxide (TGO) also acts as a critical facto

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Nicollet, Andréa. "The influence of growth temperature on CVD grown graphene on SiC." Thesis, Linköpings universitet, Halvledarmaterial, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-119919.

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Graphene is one of the most popular material due to its promising properties, for instance electronics applications. Graphene films were grown on silicon carbide (SiC) substrate using chemical vapor deposition (CVD). Influence of the deposition temperature on the morphology of the films was investigated. Characterizations were done by reflectance mapping, atomic force microscopy and Raman spectroscopy. Two samples were done by sublimation process, to compare the number of layers and the morphology of the graphene films with the one grown by chemical vapor deposition.The reflectance mapping sho

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8

Kostakis, Ioannis. "Quantum-engineered semiconductor photomixers at long wavelength illumination (1.55 μm) for THz generation and detection". Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/quantum--engineered-semiconductor-photomixers-at-long-wavelength-illumination-155-micro-metre-for-thz-generation-and-detection(2164fd28-cf88-4540-9544-33d3a6f8f310).html.

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This thesis is concerned with the characterisation, fabrication and testing of devices capable of generating and detecting terahertz (THz) radiation. Such devices are based on semiconductor photoconductors grown under low temperature (LT) conditions using the technique of Molecular Beam Epitaxy (MBE). The absorption of a pulsed or continuous wave (CW) signal by these structures in conjunction with the presence of an electric field generates photocurrent, which is fed into an antenna structure fabricated on the surface of the active layers. As a result of such a sequence, a THz signal is genera

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9

Taylor, John Macauley. "Interaction between moisture movement and induced stresses in fast grown softwood during drying." Thesis, University of Ulster, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342418.

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10

Harney, Tracey L. "Carbon metabolism in wheat (Triticum aestivum L.) grown under different temperature and irradiance." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape16/PQDD_0010/MQ28579.pdf.

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11

Ganapathy, Subramanian Santhana. "Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition." Texas A&M University, 2003. http://hdl.handle.net/1969.1/47.

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Bismuth-Strontium-Calcium-Copper-Oxide (BSCCO) compounds are an important family of compounds that have one of the highest transition temperatures among all high-temperature superconductors. The compound is known to exist in three distinct phases, commonly referred to as the 2201, 2212 and 2223 phases. Of these three phases, the 2212 and 2223 phases are the most important, as their transition temperature is higher than the boiling point of liquid nitrogen. It is desirable to produce the compound in thin film form, as the bulk samples are normally polycrystalline. This thesis compares thin fil

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Loata, Gabriel C. "Investigation of low-temperature-grown GaAs photoconductive antennae for continuous-wave and pulsed terahertz generation /." [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=985715871.

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Vijarnwannaluk, Sathon. "Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C." Diss., Virginia Tech, 2002. http://hdl.handle.net/10919/27491.

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Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below 400 °C, nonradiative recombination processes dominate and photoluminescence is quenched. When the growth temperature exceeds 400 °C, band-to-band photoluminescence emission appears. We conclude that the films change in character from LT-GaAs:C to normal GaAs:C once the growth temperature reaches 400 °C

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Kingsley-Richards, Sarah. "Influence of Plant Age, Soil Moisture, and Temperature Cylcing Date on Containter-Grown Herbaceous Perennials." ScholarWorks @ UVM, 2011. http://scholarworks.uvm.edu/graddis/122.

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Perennial growers overwintering plant stock require information to assist in deciding which containerized plants are most likely to successfully overwinter. Three studies on container-grown herbaceous perennials were conducted to examine the influence of plant age, soil moisture, and temperature cycling date on cold hardiness. In January, plants were exposed to controlled freezing temperatures of -2, -5, -8, -11, and -14C and then returned to a 3-5C greenhouse. In June, plants were assessed using a visual rating scale of 1-5 (1 = dead, 3-5 = increasing salable quality, varying by cultiva

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Colby, Jane Sarah. "Effects of a short-term freeze on Sphagnum girgensohnii grown under different light-temperature regimes." FIU Digital Commons, 2007. http://digitalcommons.fiu.edu/etd/2403.

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During the short, snow-free growing seasons in the Arctic, sudden “cold snaps” or freeze thaw events (FTE) frequently occur when temperatures fall subzero for 24 to 72 h. Vascular plants exposed to FTE are often irreversibly damaged, but despite their importance, the responses of nonvascular plants to FTE have been little studied. I grew plants of Sphagnum girgensonhii under high and low light and temperature conditions to investigate whether pre-freeze conditions influence damage and recovery of this important moss species. Plants grown at low light and high temperature showed the greatest gr

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Cappetta, Carmine. "Characterization of SiGe layers grown by Trisilane and Germane at low temperatures for BiCMOS application." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177801.

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Low temperature epitaxy (LTE) of SiGe by chemical vapor deposition (CVD) has attracted dramatic attention during the last decade for CMOS and BiCMOS application. LTE relates to a temperature range of 350÷650 °C. The low temperature budget provides the possibility of integrating epitaxy in the process line when the sensitive active parts are already present on the chips. In this case, the benefits of LTE are to avoid the thermal mismatch between different layers in the transistors, preventing damages to the poly gate and to ensure the integrity of thin gate oxide. The challenge to deal with the

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17

Kim, Chang-Kyung. "Microstructural evolution of NiO grown on the pure Ni and Cr doped substrates at high temperature environment." Thesis, Massachusetts Institute of Technology, 1991. http://hdl.handle.net/1721.1/13531.

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18

Nothnagl, Margit. "Interaction between greenhouse grown chrysanthemum and Frankliniella occidentalis : a modelling approach /." Alnarp : Department of Crop Science, Swedish University of Agricultural Sciences, 2006. http://epsilon.slu.se/200697.pdf.

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Clark, Kendal. "Ultra High Vacuum Low Temperature Scanning Tunneling Microscope for Single Atom Manipulation on Molecular Beam Epitaxy Grown Samples." Ohio University / OhioLINK, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1125611713.

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Mavlonov, Abdurashid, Steffen Richter, Wenckstern Holger von, Rüdiger Schmidt-Grund, Michael Lorenz, and Marius Grundmann. "Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95O thin films grown by pulsed laser deposition." American Institute of Physics, 2016. https://ul.qucosa.de/id/qucosa%3A31212.

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We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant’s solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivi

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Lebreton, Fabien. "Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLX109/document.

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Cette thèse se focalise sur les propriétés passivantes octroyées par des couches minces d’Al2O3 déposées par Atomic Layer Deposition (ALD) à partir de TMA et H2O pour les cellules photovoltaïques en silicium ayant des températures de fabrication inférieures à 400 °C. La première partie de ce travail de doctorat vise à identifier les mécanismes de formation des charges électrostatiques négatives présentes dans l’oxyde d’aluminium. Pour ce faire, les effets de l’illumination post-dépôt (à savoir le flux et l’énergie des photons), ainsi que la température du substrat ont été étudiés. Il a été con

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JAYASEELAN, VIDHYA SAGAR. "STUDY OF POLYCRYSTALLINE DIAMOND THIN FILMS GROWN IN A CUSTOM BUILT ECR PE-CVD SYSTEM." University of Cincinnati / OhioLINK, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=ucin975513169.

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23

Tomita, Kazuyoshi, Kenji Itoh, Osamu Ishiguro, Tetsu Kachi, and Nobuhiko Sawaki. "Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer." American Institite of Physics, 2008. http://hdl.handle.net/2237/12032.

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Tkach, Igor. "Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965647722.

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Demers, Joseph R. "Femtosecond demodulation in low temperature grown Gallium Arsenide : a high spectral purity sub-millimeter and terahertz source for spectroscopy /." The Ohio State University, 1999. http://rave.ohiolink.edu/etdc/view?acc_num=osu1488191124569219.

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Romanes, Maia Castillo. "Structure and Low-temperature Tribology of Lubricious Nanocrystalline ZnO/Al2O3 Nanolaminates and ZrO2 Monofilms Grown by Atomic Layer Deposition." Thesis, University of North Texas, 2008. https://digital.library.unt.edu/ark:/67531/metadc9741/.

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Currently available solid lubricants only perform well under a limited range of environmental conditions. Unlike them, oxides are thermodynamically stable and relatively inert over a broad range of temperatures and environments. However, conventional oxides are brittle at normal temperatures; exhibiting significant plasticity only at high temperatures (>0.5Tmelting). This prevents oxides' use in tribological applications at low temperatures. If oxides can be made lubricious at low temperatures, they would be excellent solid lubricants for a wide range of conditions. Atomic layer deposition (AL

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CHEN, CHANG-YOU, and 陳長佑. "Grow the Single Crystal Rare-Earth-Barium-Copper-Oxide High-Temperature Superconductors by Top Seed Melt Growth Methods." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/k88yv5.

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碩士<br>大葉大學<br>醫療器材設計與材料碩士學位學程<br>105<br>The main purpose of this study is to explore the process parameters of growing single crystal RE-Ba-Cu-O (RE = Y, Sm, and Nd) high temperature superconductors. The samples were prepared by using top-seeded melt-textured growth, MgO was selected as seed crystal for SmBCO and NdBCO, and then SmBCO was used as seed crystal for YBCO. RE210 and RE211 were added to RE123, and some samples were found the JC and TC values were enhanced, and the RE/Ba atomic ratio was reduced and the RE and Ba substitution were suppressed. During top-seeded melt growth pr

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Wang, Sun-Chieh, and 王孫杰. "Piezoreflectance of annealed low-temperature grown GaAs." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/78384971763374847809.

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碩士<br>國立中央大學<br>物理學系<br>85<br>The low-temperature GaAs grown at 200C by MBE contains excess arsenic,causing a high concentration of point defects. After annealed at 600C, excessarsenic precipitates in the layer and becomes semi-insulating. We grow LT GaAswith different cap thickness on top of the Si-delta-doped GaAs, which creates an uniform built-in electric field. Then the samples are annealed at differenttemperature from 600C to 900C. And we can calculate the pinning Fermi-level position

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chen, song-sang, and 陳松昇. "Material Characterizations of Low temperature grown GaN films." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/97843180680927010907.

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Zhao, Pin. "Characterization and applications of low-temperature-grown MBE gallium arsenides." Thesis, 1994. http://hdl.handle.net/1957/36624.

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Yang, ChuaHao, and 楊家豪. "Grown of carbon nanostructures by low-temperature aqueous solution method." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/96419061886904564060.

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碩士<br>明志科技大學<br>材料工程研究所<br>100<br>This study present a simple method to produce a lot of carbon as micro and nanostructure in aqueous solution at low temperature (85 °C). The structures have been observed two basic units by transmission electron microscopy (TEM): thin carbon nanoribbons, monolayer graphene. This method addition to obtain two basic units and found that synthesize multi-wall carbon nanotube (MWCNTs) without catalyst and carbon basin-shape structure. We further found that the carbon nanoribbons can self-assembly to form ribbon type of graphite nanofibers, carbon nanorings and MW

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Wu, Jun-Sheng, and 吳俊昇. "ZnO nanorods and nanoneedles grown by low-temperature solution method." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/v83824.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>95<br>In this study, we have made efforts to develop a novel chemical-liquid deposition technique for the low-temperature growth of highly oriented and densely packed ZnO nanorods on substrates through homogeneous nucleation of the zinc oxide seed layer for growing well-aligned ZnO nanorod arrays on the substrate. The results exhibite that the size of nanorod strongly depends on [Zn2+] concentration. Furthermore, the as-grown vertical ZnO nanowires were characterized by XRD, FE-SEM, Micro-Ranman and Micro-PL. Where the morphology of ZnO seed layers, pH, growth t

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Kuei, Ping-Yu, and 桂平宇. "Studies on the ultrafast carrier dynamics of low-temperature grown GaAs." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/08288189484957107522.

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碩士<br>國立清華大學<br>電機工程學系<br>85<br>abstract Pump-probe photoreflectance (PR) and transmission (PT) were measured simultaneously from in situ annealed low- temperature grown (LT-) GaAs at wavelengths ranging from 735 to 775nm to investigate the dynamics of photo- carriers. From the experimental results, we conclude that the absorption and refraction coefficients were changed by the effects of bandfilling, hot carrier relaxation, carrier recombination

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Lin, Chih-Wei, and 林智偉. "High Mobility of Low Temperature GaN Grown by Two Heater MOCVD." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/31349271360461005870.

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碩士<br>國立交通大學<br>電子物理系所<br>103<br>In this theses, we use the home-made two heater MOCVD reactor to grow low-growth temperature GaN thin films at 850℃. The electrical and optical properties of the samples were investigated by Hall, Temperature dependent Hall, X-ray diffraction and photoluminescence measurements. Hall measurement results indicate that the optimized ceiling temperature of GaN thin film is 1050℃ in ceiling temperature series. The carrier mobility and carrier concentration of GaN thin film is 515 cm2/Vs and 5.1x1016 cm-3.The X-ray diffraction and temperature dependent Hall measureme

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Lin, B. C., and 林柏村. "High Quality Si Grown by LPCVD at Low Temperature with silane." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/60959267238038758567.

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碩士<br>國立交通大學<br>電子研究所<br>84<br>We have designed a simple hot-wall low pressure chemical vapor deposition(LPCVD) system to grow high quality epitaxial Si films from 550 to 900C.The quality of the epitaxial Si film found comparable to that of the substratehas been examined by secondary electron microscopy (SEM) for surface morphol-ogy, and by x-ray diffraction,and high-resolution cross-sectional transmissi-on electron microscopy (TEM) for crystallinity. Reduction of moisture and ox-ygen i

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Chen, Kuan-Chia, and 陳冠嘉. "Detector based on ZnO nanorods grown by high temperature hydrothermal method." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/2xfagf.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>104<br>In the study, the zinc oxide nanorods (ZnO NRs) were fabricated on glass substrate by high-temperature hydrothermal method. The enhancement of sensing performance was mainly attributed to the large effective surface area and more subtle structure of ZnO NRs surface. First, the ZnO seed film was deposited on the glass substrate by RF sputtering. Subsequently, Au film was deposited on the sample by using E-Gun evaporated through an interdigitated shadow mask onto the ZnO seed layer to form contact electrodes. Finally, the ZnO NRs was fabricated on substrate b

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Yang, Pei-Wen, and 楊沛雯. "Optical properties of In-rich InGaN dots grown at different temperature." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/24700994614126521848.

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碩士<br>國立交通大學<br>電子物理系所<br>95<br>In this thesis, we investigated the surface morphologies, alloy composition, and optical properties of In-rich InxGa1-xN dots (x＞0.85), which were prepared at different growth temperature (Tg) by metalorganic chemical vapor deposition (MOCVD). The atomic force microscopy (AFM) images showed that the InGaN dots density decreased from 4.0×109 to 2.2×107 cm-2 as the Tg was increased from 550 to 725 oC. This can be attributed to the enhanced migration length of In adatoms that resulted in the formation of less dense dots. The X-ray diffraction peak of ternary InGa

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Chou, Shiun-Yi, and 周訓毅. "Characterizations of ZnTe Bulks Grown by Temperature Gradient Solution Growth (TGSG)." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/30031427136002788920.

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碩士<br>中原大學<br>電子工程研究所<br>89<br>The optoelectronic devices have had a mature development in recent years. The most popular research is on the light emitting diodes, where and the involved manpower is also the largest. The main research purpose in this field is to produce three fundamental kinds of visible red, green, and blue LEDs, whatever the crystal or epitaxial techniques are used. In this work, we study a comparatively new II-VI compound semiconductor material, which is called zinc tellurium. Zinc tellurium has high forbidden bandgap of 2.26eV at room temperature. Using this property, we c

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Che-Lieh, Lin, and 林哲列. "Piezoreflectance study of low-temperature grown AlGaAs/GaAs multiple quantum wells." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/35747193886171389495.

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Hsieh, Ping-I., and 謝秉億. "Photoluminescence studies of InGaAs Quantum Well grown at different temperatures." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/67005251325252471526.

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Wu, Keng-Shuo, and 吳耿碩. "Structures and electrical properties of bismuth thin films grown at low temperature." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/28704948028661397860.

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博士<br>臺灣大學<br>物理研究所<br>96<br>Bismuth thin films were grown by pulsed laser deposition on glass substrates with the substrate temperature from 110 K to 473 K. The structure of the films was characterized by X-ray diffraction. The surface morphology was studied by atomic force microscopy and X-¬ray reflectivity. The electrical properties of the films were probed by Van der Pauw measurement. We observed the changes in the orientation, grain size and roughness of the bismuth films as a function of the substrate temperature. The results for the Bi films grown at low temperatures (110 K < T < 130 K)

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Hsieh, Cheng-Yuen, and 謝正遠. "Photoluminescence studies on ZnO grown by different sputtering power and annealing temperature." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/53726390972209842272.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>95<br>In this study, ZnO films grown by RF sputtering method are investigated by photoluminescence and scanning electron microscope. ZnO film arises from metal Zn sputtered on substrate at different sputtering sputtering power (150~210W) and then annealed at different temperature (900~1200℃) under 1 atm. We find that the high quality ZnO was obtained at sputtering power and annealing temperature is 150W and 1000℃ respectively. The ZnO grain size increased as the annealing temperature increased. The UV intensity decreased due to radiative defect increases as the an

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Chen, Chien-Chung, and 陳建仲. "The structure and field emission studies of low temperature grown carbon nanotubes." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/70693534836821587869.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>90<br>The effects of carbon nanotubes grown at low temperature by different metallic catalysts, Fe, Ni, Ti, and Cu, were studied. Based on the experimental result, we find that using lower melting point of transition metal, Ni, as catalyst will contribute better structure and higher growth rate of carbon nanotubes, which is superior to using higher melting point of transition metals, such as Fe and Ti. Using the lowest melting point metal Cu as the catalyst, we are unable to obtain better quality of carbon nanotubes. In order to research and realize the bonding behav

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辛華煜. "Characterization of cadmium telluride crystals grown by temperature gradient solution growth method." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/87255346078532896593.

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Wu, Keng-Shuo. "Structures and electrical properties of bismuth thin films grown at low temperature." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1801200812212900.

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Kao, Ming-Hsuan, and 高名璿. "Low-Temperature Plasma-Grown Low-Defect Amorphous Si for Fexible Optoelectronic Applications." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/xm742k.

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博士<br>國立交通大學<br>光電工程研究所<br>106<br>The demand for system on flexible (SoF) electronics is increasing for realizing devices with high portability and low power consumption. Polyimide (PI) is the potential flexible substrate due to its high glass-transition temperature (Tg) and low coefficient of thermal expansion (CTE). However, the conventional high thermal processes constrain this realization; thus developing low thermal budget processes is essential. In this thesis, we investigated the material characteristics of low-defect amorphous Si (a-Si) thin films and developed low thermal budget proce

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Chun-YangCheng and 鄭竣陽. "Thin film transistors using ZnO nanorods grown by low temperature hydrothermal method." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/wy59km.

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碩士<br>國立成功大學<br>微電子工程研究所<br>107<br>In this study, the retaining layer and optimized parameters are used to overcome the problem of non-directionality nanostructure growth by hydrothermal method. The zinc oxide nanostructure with regular arrangement are prepared and applied to the channel layer of thin films transistors. Using change the heat treatment temperatures to improve the problem of high defect density exist in zinc oxide generate by low temperature hydrothermal method. Finally, the zinc oxide nanostructure arranges regularly to fabricate thin film transistors. After annealing process,

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Wu, Kelan, and 吳凱倫. "The study of low temperature grown ZnO nanorods by various aqueous solutions." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/12322432887152238587.

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碩士<br>國立勤益科技大學<br>機械工程系<br>100<br>In this study, one dimensional structure of the zinc oxide was grown by hydrothermal method. In view of the literature found that the optimum temperature of ZnO nanorods were grown by hydrothermal method maintaining 90 ℃ environment to generate hexagonal ZnO nanorodsthe of the body. In the study, we used four kinds of aqueous solution such as Deionized Water, Alkaline Ionized Water, Reverse Osmosis Filtration Water, and Tap Water,zinc (Zinc Nitrate) solvent and surfactants six methylene tetramine (C6H12N4, HMT), zinc oxide nanorods than its growth characterist

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Hsieh, Dan-Hua, and 解丹華. "Investigating the properties of InN epilayers grown with different temperature by photoluminescene." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/69624990588237748451.

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碩士<br>元智大學<br>光電工程研究所<br>99<br>In this article,we have grown InN epilayers on sapphire substrate with GaN buffer layer, and the V/III ratio is fixed at 1:1,growth temperature varied from 495°C to 525°C. After growing,we investigated the three samples by SEM, and observed that with temperature increased, the morphology of InN epilayers changed from nanorod (465°C) to film (495°C,525°C). The electrical and optical properties were analyzed by Hall measurement and photoluminescence.By Hall measurement, we observed low-temperature (LT) growth sample have the lowest free carrier concentration, the

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Chuang, Tsung-Ying, and 莊宗穎. "Investigation of Carbon Nanotubes Grown at Low Temperature for Field Emission Display." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/83030047203051895392.

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碩士<br>國立交通大學<br>電子工程系所<br>93<br>In order to decrease the price and improve the uniformity of CNT-FEDs, the thermal CVD process is necessary for the synthesis of CNTs on glass substrate at a low temperature below the melting point of glass (~570℃). For the growth of CNTs on glass substrate at low temperature, the melting point of catalyst is one of the critical factors. In our study, two novel catalysts NiPd and FeC were discovered for CNT growth at low temperature. The lowest melting points 1237 ℃and 1147 ℃ occur as the weight percentages of NiPd and FeC are Ni:Pd = 40:60 and Fe:C=95.7:4.3, re

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