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1

Large, Alan Clifford. "Ion implanted and epitaxially grown crystal waveguide lasers." Thesis, University of Southampton, 1995. https://eprints.soton.ac.uk/394154/.

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This thesis reports the results of investigations into laser action in optical waveguides formed by the methods of helium ion implantation and liquid phase epitaxial growth. Helium ion implantation has been used to produce waveguides in a range of dielectric materials. Of these Nd:GGG and Yb:YAG have been operated as planar waveguide lasers. The most important part of the work on ion implantation has been the fabrication of channel waveguides using a gold stopping mask to prevent ion damage in certain regions. Using this method channel waveguide lasers have been produced in Nd:YAG, Nd:GGG and
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2

Schmidt, Christiane [Verfasser]. "Predicting the Crystal Morphology Grown from Aqueous Solution / Christiane Schmidt." Aachen : Shaker, 2012. http://d-nb.info/1066197407/34.

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3

Wong, Hok Ming. "Sub-band gap luminescence of ZnSe/GaAs heterojunction grown by hot wall epitaxy." HKBU Institutional Repository, 1996. http://repository.hkbu.edu.hk/etd_ra/61.

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4

Maier, Dirk. "Segregation effects in single-crystal fibers grown by the micro-pulling-down method." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2009. http://dx.doi.org/10.18452/15979.

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In dieser Arbeit wurden Segregationen, die bei der Z"uchtung einkristalliner Fasern von Oxidmischkristallsystemen mittels der Micro-Pulling-Down Methode auftreten, experimentell und theoretisch untersucht. Dazu wurden Fasern von hochschmelzenden Oxidmischkristallsystemen mit unterschiedlichen Gleichgewichtsverteilungskoeffizienten gezüchtet. Es wurde gezeigt, dass die Dotierstoffprofil von dem Gleichgewichtsverteilungskoeffizienten, der Ziehgeschwindigkeit, dem Sauerstoffpartialdruck der Züchtungsatmosphäre sowie der Meniskushöhe abhängt. Ein analytisches und ein numerisches Modell wurden
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5

Bacher, Fred R. "A study of GaAs, InP and InGaAs grown by organometallic vapor phase epitaxy /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,139.

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6

Airaksinen, Veli-Matti. "Dopant incorporation, desorption and migration in MBE grown InP and Al←xGa←1←-←xAs/GaAs." Thesis, University of Glasgow, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.279931.

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7

Blumenthal, Sarah [Verfasser]. "MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes / Sarah Blumenthal." Paderborn : Universitätsbibliothek, 2019. http://d-nb.info/1182422381/34.

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8

Grigorieff, Peter Nikolaus. "Electron microscopy of interfaces and thin buried layers in the InGaAs/InP system grown by MOVPE." Thesis, University of Bristol, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386162.

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9

MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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10

Malowney, Josh. "Ordered Patterns of Functional Oxide Nanostructures Grown from Chemical Solutions." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/108098.

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La generación de nanoestructuras de oxido por medio de impresión litográfica (NIL) y litografía por haz de electrones (EBL) se ha convertido en una estrategia más refinada durante los últimos años. Por medio de NIL hemos fabricado matrices de nanoagujeros y nanopuntos de La0.7Sr0.3MnO3 (LSMO), así como nanopuntos y nanohilos de LaxSr1-xOy por medio de EBL. Las nanoestructuras echas por NIL se han fabricado después de espinar una capa de precursor de oxido de metal encima de un substrato de cristal solo aislante. Después se ha hecho un estampado con un molde duro de silicona masculino,
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11

Спесивий, А. С., Viacheslav Ivanovych Perekrestov, Вячеслав Иванович Перекрестов та Вячеслав Іванович Перекрестов. "Моделирование равновесных форм кристаллов". Thesis, Видавництво СумДУ, 2010. http://essuir.sumdu.edu.ua/handle/123456789/4208.

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Поставлена задача получить методами компьютерного моделирования равновесную форму кристалла. Для наработки метода получения равновесных форм различных кристаллических структур производится моделирование кристалла примитивной кубической сингонии. При цитировании документа, используйте ссылку http://essuir.sumdu.edu.ua/handle/123456789/4208
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12

Karaagac, Hazbullah. "Structural, Electrical And Optical Characterization Of Ge -implanted Gase Single Crystal Grown By Bridgman Method." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606522/index.pdf.

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In this work, structural, electrical and optical characterization of as-grown, Ge-implanted, and annealed GaSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system, have been studied by carrying out X-ray Diffraction (XRD), electrical conductivity, Hall effect, photoconductivity, and spectral transmission measurements. The temperature dependent electrical conductivity of these samples have been measured between 100 and 400 K. As a result, it was observed that upon implanting GaSe with germanium following annealing process, the resistivity is reduced from 2.1x109 to 6.5x10
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13

Schmidt, Christiane [Verfasser], J. [Akademischer Betreuer] Ulrich, and G. [Akademischer Betreuer] Schulte. "Predicting the crystal morphology grown from aqueous solution / Christiane Schmidt. Betreuer: J. Ulrich ; G. Schulte." Halle, Saale : Universitäts- und Landesbibliothek Sachsen-Anhalt, 2012. http://d-nb.info/1025302745/34.

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14

Ibrahim, Noor Baa'yah. "Properties of yttrium iron garnet thin films grown by pulsed laser ablation deposition." Thesis, University of Warwick, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343112.

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15

Vedantham, Kumar. "Effect of operating parameters on the growth rate of solution grown crystals." Master's thesis, Mississippi State : Mississippi State University, 2004. http://library.msstate.edu/etd/show.asp?etd=etd-07122004-101317.

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16

Gupta, Archana. "Characterization and modeling of strained layers grown on V-grooved substrates." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ30143.pdf.

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17

Pauchet, Morgan. "Application of the derived crystal packing model to molecular crstals grown in solutions or in gels." Rouen, 2007. http://www.theses.fr/2007ROUES056.

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The Derived Crystal Packing (DCP) model has been partly automated. The docking step can be handled by two computer program. They are tested on two couples of enantiomer / racemic compound to underline their structural similarities. The limits of the model are also discussed. A second part of the study is devoted to the experimentation of the crystallization in gel. This technique is tested with the gel precursor Tetramethoxysilane on several organic compounds. Different methods for the crystallization are described. In addition, a theoretical as well as experimental study is carried out on (±)
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18

Ester, Guy R. "An atomic force microscopy study of the crystal growth interface of solution grown potassium hydrogen phthalate." Thesis, University of Bath, 1999. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299809.

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19

SALDUTTI, MARCO. "Microcavity photonic crystal lasers and quantum dot lasers epitaxially grown on silicon: theory and numerical modelling." Doctoral thesis, Politecnico di Torino, 2021. http://hdl.handle.net/11583/2912974.

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20

Lee, Sam-Dong. "Crystalline properties of gallium oxide thin films epitaxially grown by mist chemical vapor deposition." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215547.

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21

Rutter, Gregory Michael. "Atomic scale properties of epitaxial graphene grown on sic(0001)." Diss., Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26570.

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Graphene, a honeycomb lattice of sp2-bonded carbon atoms, has received considerable attention in the scientific community due to its unique electronic properties. Distinct symmetries of the graphene wave functions lead to unusual quantum properties, such as a unique half-integer quantum Hall effect. As an added consequence of these symmetries, back-scattering in graphene is strongly prohibited leading to long coherence lengths of carriers. These charge carriers at low energy exhibit linear energy-momentum dispersion, much like neutrinos. Thus, carriers in graphene can be described as massl
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22

Zhong, Mingyu. "Doped GaN grown by Phase Shift Epitaxy, fabrication and characterization of GaN:Eu LED." University of Cincinnati / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1384427470.

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23

Karabulut, Orhan. "Structural, Electrical And Optical Characterization Of N- And Si-implanted Gase Single Crystal Grown By Bridgman Method." Phd thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/1135755/index.pdf.

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Single crystals of GaSe were grown from the melt using 3-zone vertical Bridgman-Stockbarger system. In order to determine the doping effect, nitrogen and silicon ions were implanted to the grown crystals. Surface morphology and stoichiometry were examined using scanning electron microscope equipped with EDAX and structure properties were examined by x-ray diffraction technique. It was observed that the resulting ingot was stoichiometric and the structure was hexagonal. To identify the effects of ion implantation on the physical properties of the samples depending on annealing<br>electrical co
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24

Li, Hui. "Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique." Thesis, Lyon 1, 2014. http://www.theses.fr/2014LYO10327/document.

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En dépit de leurs simplicités chimiques, de leurs fusion congruente, de leurs performances mécaniques et de leurs propriétés optiques, les monocristaux de saphir contiennent comme défauts des bulles aussi connus sous le nom de micro-vides. Quelle que soit la technologie de croissance, les cristaux obtenus sont caractérisés par la présence de micro-et macro-bulles qui affectent leurs qualités optiques et mécaniques limitant ainsi leurs applications. Ces bulles dégradent les propriétés optiques et l'efficacité des lasers produits par une réduction de la transparence des saphirs; elles induisent
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25

Mandia, David J. "NC-AFM and XPS Investigation of Single-crystal Surfaces Supporting Cobalt (III) Oxide Nanostructures Grown by a Photochemical Method." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/23117.

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The work of this thesis comprises extensive Noncontact Atomic Force Microscopy (NC-AFM) characterization of clean metal-oxide (YSZ(100)/(111) and MgO(100)) and graphitic (HOPG) supports as templates for the novel, photochemically induced nucleation of cobalt oxide nanostructures, particularly Cobalt (III) Oxide. The nanostructure-support surfaces were also studied by X-ray Photoelectron Spectroscopy (XPS) to verify the nature of the supported cobalt oxide and to corroborate the surface topographic and phase NC-AFM data. Heteroepitaxial growth of Co2O3 nanostructures proves to exhibit a variety
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26

Hoffman, Timothy B. "Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method." Diss., Kansas State University, 2016. http://hdl.handle.net/2097/32797.

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Doctor of Philosophy<br>Department of Chemical Engineering<br>James H. Edgar<br>Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These appli
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27

Zhou, Wenxuan. "Stoichiometry and Crystal Structure of Poly (Lactic Acid) (PLA) Stereocomplex (SC) in Cold-crystallization and Solution-grown Crystals as Studied by Solid-state NMR and 13C Isotope Labeling." University of Akron / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=akron1522239647112751.

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28

Atalay, Ramazan. "Optical and Structural Properties of Indium Nitride Epilayers Grown by High-Pressure Chemical Vapor Deposition and Vibrational Studies of ZGP Single Crystal." Digital Archive @ GSU, 2012. http://digitalarchive.gsu.edu/phy_astr_diss/60.

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The objective of this dissertation is to shed light on the physical properties of InN epilayers grown by High-Pressure Chemical Vapor Deposition (HPCVD) for optical device applications. Physical properties of HPCVD grown InN layers were investigated by X-ray diffraction, Raman scattering, infrared reflection spectroscopies, and atomic force microscopy. The dependencies of physical properties as well as surface morphologies of InN layers grown either directly on sapphire substrates or on GaN/sapphire templates on varied growth conditions were studied. The effect of crucial growth parameters suc
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29

Constantin, Costel. "Growth, Structural, Electronic and Optical Characterization of Nitride Semiconductors Grown by rf-Plasma Molecular Beam Epitaxy." Ohio : Ohio University, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1132008963.

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30

Mc, Grath Oran F. K. "Structural and magnetic properties of epitaxial W/Fe/W and Gd/Fe films grown by pulsed laser deposition." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10209.

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Le but de cette these est d'etudier les proprietes structurales et magnetiques des couches epitaxiees de w/fe/w et gd/fe elaborees par depot laser pulse. La technique de depot laser pulse est presentee dans le premier chapitre. La croissance des couches minces est discutee dans le deuxieme chapitre puis l'analyse des proprietes structurales des couches elaborees est presentee dans le troisieme chapitre. Une revue des proprietes magnetiques des couches ultra-minces, telle que le moment magnetique, l'anisotropie et les excitations thermiques est presentee dans le quatrieme chapitre. La determina
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Graham, Ruth Margaret. "Nucleation studies of MOVPE grown antimonides." Thesis, University of Oxford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320531.

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Lam, Wai Wing Malcolm. "Investigation of photovoltaic cells on Bridgman grown CuGaxIn1-xSe2 crystals." Thesis, McGill University, 1998. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=34993.

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Several important aspects of ZnO/CdS/CuGaXIn1-X Se2 photovoltaic cells have been examined in this thesis. First of all, CuGaXIn1-XSe2 crystals free from ampoule adhesion and suitable for photovoltaic cell studies were grown using a horizontal Bridgman method. The composition variation for ingots with different starting Ga content was analyzed and the results were interpreted using established pseudobinary phase diagrams. Various optimizations in the cell fabrication, such as crystal polishing, window layer deposition and cell area patterning, were carried out to establish a highly reproducible
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Kammonen, Alexis. "Mathematical analysis of planar crystals grown from vapor in bounded domains." Thesis, KTH, Matematik (Avd.), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-150457.

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The quasi-static evolution of planar crystals grown from supersaturation or dilute solutions are studied. A crystal is assumed to be an m-gon at all time, but not necessarily convex, in a domain with smooth boundary. The equations are of Stefan type coupled with the Gibbs-Thomson relation. We show local in time existence of solutions.
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Lam, Wai-Wing Malcolm. "Investigation of photovoltaic cells on Bridgman grown copper gallium indium diselenide crystals." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0007/NQ44485.pdf.

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35

Bilgi, Seda. "Photoluminescence Study Of Ge-implanted Gase And Inse Single Crystals Grown By Bridgman Method." Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/3/12607482/index.pdf.

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In this study, photoluminescence properties of as grown, Ge implanted GaSe and InSe crystals with doses 1013, 1014, and 1015 ions/cm2 and 1015 ions/cm2 Ge implanted and annealed GaSe and InSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system have been studied by photoluminescence spectroscopy (PL). PL spectra of as grown and implanted GaSe samples with three different doses have been studied in the ranges within the wavelength interval 570-850 nm and in the temperature ranges between 21 and 110 K. Temperature dependencies of all observed bands revealed that the peak wi
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Maroudas, Dimitrios. "Dynamics of point and line defects in single semiconductor crystals grown from the melt." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/12908.

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37

Heineman, Dawn Laurel. "Optimization of ALD grown titania thin films for the infiltration of silica photonic crystals." Thesis, Available online, Georgia Institute of Technology, 2004:, 2004. http://etd.gatech.edu/theses/available/etd-05142004-143254/unrestricted/heineman%5Fdawn%5Fl%5F200407%5Fms.pdf.

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Thesis (M.S.)--School of Materials Science and Engineering, Georgia Institute of Technology, 2005. Directed by Christopher Summers.<br>Summers, Christopher, Committee Chair ; Snyder, Robert, Committee Member ; Wang, Zhong Lin, Committee Member. Includes bibliographical references.
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Petersen, Danyal A. "Laboratory study of electrical discharges on vapor grown ice crystals subjected to strong electric fields." abstract and full text PDF (UNR users only), 2009. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3387817.

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Zhou, Xiao. "The behaviour of nitrogen in Czochralski-grown silicon crystrals : its role in oxygen precipitation and intrinsic gettering." Thesis, University of Liverpool, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240913.

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40

Wang, Yanping. "Structural analyses by advanced X-ray scattering on GaP layers epitaxially grown on silicon for integrated photonic applications." Thesis, Rennes, INSA, 2016. http://www.theses.fr/2016ISAR0013/document.

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Cette thèse porte sur le développement des méthodes d'analyse structurale de la couche mince de GaP epitaxiées sur le substrat de silicium par l'épitaxie par jets moléculaires (MBE), basées sur la diffraction des rayons X (ORX) et combinées à des techniques complémentaires telles que la microscopie électronique en transmission (TEM), la microscopie à force atomique (AFM) et la microscopie à effet tunnel (STM). Le travail est centré sur la caractérisation quantitative de la densité des défauts cristallins comme les micro-macles et les domaines d'inversion présents dans la couche ainsi que l'éva
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Asare-Yeboah, Kyeiwaa. "Temperature gradient approach to grow preferentially-oriented tips pentacene crystals for organic thin film transistors." Thesis, The University of Alabama, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10006922.

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<p> As a functionalized pentacene, 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) is a p-type organic semiconductor with remarkable intrinsic charge carrier transport and stability in ambient conditions. TIPS pentacene is soluble in most organic solvents, making it solution processable. TIPS pentacene, nonetheless, inherently forms acutely anisotropic crystals with large gaps in between the crystals, limiting charge transport and leading to vast variations in organic thin film transistor (OTFT) performance. Described in this dissertation are crystal growth techniques implemented
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Kunkemöller, Stefan [Verfasser], Markus [Gutachter] Braden та Markus [Gutachter] Grüninger. "Spin-orbit effects and competing magnetic correlations in layered Ruthenates: A neutron scattering study using floating-zone grown single crystals / Stefan Kunkemöller ; Gutachter: Markus Braden, Markus Grüninger". Köln : Universitäts- und Stadtbibliothek Köln, 2017. http://d-nb.info/1161223258/34.

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Ilyas, Muhammad. "Development of nano-graphene cementitious composites (NGCC)." Thesis, Brunel University, 2016. http://bura.brunel.ac.uk/handle/2438/15828.

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Ordinary Portland cement (OPC) is the main constituent of concrete works as a principal binder for aggregates and intrinsically transmits the brittleness into concrete through the formation of hydration crystals in the cement microstructure. A number of nano cementitious composites were developed in recent years to offset the brittleness with newly discovered nanomaterials and the most prevalent among those is the graphene oxide (GO). The main objective of this PhD research work is to develop nano graphene cementitious composites (NGCC) using low cost, two dimensional (2D) graphene nanoplatele
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Täuber, Daniela. "Characterization of heterogeneous diffusion in confined soft matter." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-77658.

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A new method, probability distribution of diffusivities (time scaled square displacements between succeeding video frames), was developed to analyze single molecule tracking (SMT) experiments. This method was then applied to SMT experiments on ultrathin liquid tetrakis(2-ethylhexoxy)silane (TEHOS) films on Si wafer with 100 nm thermally grown oxide, and on thin semectic liquid crystal films. Spatial maps of diffusivities from SMT experiments on 220 nm thick semectic liquid crystal films reveal structure related dynamics. The SMT experiments on ultrathin TEHOS films were complemented by fluores
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Vaidya, Naveen. "Modeling grown-in defects in indium antimonide crystals /." 2003. http://wwwlib.umi.com/cr/yorku/fullcit?pMQ99399.

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Thesis (M.Sc.)--York University, 2003. Graduate Programme in Mathematics.<br>Typescript. Includes bibliographical references (leaves 115-118). Also available on the Internet. MODE OF ACCESS via web browser by entering the following URL: http://wwwlib.umi.com/cr/yorku/fullcit?pMQ99399
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WU, QING-ZING, and 吳慶星. "Thermal stresses of czochralski-grown crystal." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/67295888579769474306.

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Wu, Jahn Horng, and 吳政宏. "The Transient THermal Stress Analysis of Czochralski-Grown Crystal." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/18254346387990783419.

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碩士<br>中原大學<br>機械工程研究所<br>81<br>The purpose of this paper is to estimate the transient thermal stresses as well as the dislocation density of a Czochralski- pulled single crystal. The unsteady heat transfers during the process with planar and curved solid-liquid interface are respectively investigated Laplace transforms of the governing equations and the corresponding boundary conductions as well as undertaken in advance,then analytical solutions of temperature in the Laplace domain are obt
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Liang, Shuqing. "Thermal stress reduction inside InSb crystal grown by Czochralski method /." 2005. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:NR19804.

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Thesis (Ph.D.)--York University, 2005. Graduate Programme in Mathematics and Statistics.<br>Typescript. Includes bibliographical references (leaves 114-123). Also available on the Internet. MODE OF ACCESS via web browser by entering the following URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:NR19804
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Liu, Cheng-Hsin, and 劉政鑫. "Preparation and characterization of ZnSe single crystal grown by physical vapour transport method." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/38875786161031159537.

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碩士<br>國立交通大學<br>電子研究所<br>84<br>In this study, the zinc selenide was grown by using the dissoci- ative sublimation method. There are three major features existed in our furnace which are different from the general physical vapor tr- ansport one. First, we adopt the single zone to grow the crystals instead of the multi zone. It is consequently hard to control the temperature profile and grow high quality crystals. Secondly, we can't obtain the seed crystal which can reduce growth time
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Shen, Po-Yuan, and 沈柏元. "Control of Crystal Orientation of Ferroelectric Thin Films Grown on Metal Oxide Layers." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/43511780381557533236.

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Abstract:
碩士<br>國立交通大學<br>材料科學與工程系<br>90<br>SBT and PTO, and PZT ferroelectric thin films were prepared by matelorganic and sol-gel method in this study. The physical and electrical properties of the dielectric films, sandwiched in a MIM structure with [110] oriented SRO or BRO as bottom electrode and Pt as top electrode, are investigated. The thicknesses of these thin films were about 2500Å. The crystal structure and surface morphology were analyzed by X-Ray and SEM measurement. Interface strain energy and electricity properties of these MIM structures were measured and their correlations were studied.
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