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1
Barrett, S. K. "Growth regulators in Lolium perenne grown for seed." Thesis, University of Nottingham, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378463.
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Drewett, Thoams Ashley. "The growth and quality of UK grown Douglas-fir." Thesis, Edinburgh Napier University, 2015. http://researchrepository.napier.ac.uk/Output/9163.
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Timber is a local, sustainable and valuable building material, but it is highly variable compared to other building materials (e.g. concrete, steel). The quality of wood is its suitability for the end-user, in this case the construction industry (via timber processors). Douglas-fir is a tall conifer capable of producing high construction grade timber. Native to the north-western Pacific regions of America and Canada, Douglas-fir was introduced to the UK in 1827. After World War 1, the planting of conifers greatly increased due to the establishment of the Forestry Commission. Despite being a high value timber crop in North America, Douglas-fir was not highly utilised in Great Britain due to a perceived lack of suitable growing sites (requiring nutrient-rich soil) and a lack of knowledge on its qualities (mechanical). Consequently, it still to this day covers a relatively small amount of the total UK conifer plantation area, but under predicted climate change projections an increased range of sites will become more suitable for Douglasfir, thus investigation now is imperative. To investigate the quality of Douglas-fir timber and its biological variation, a variety of sites were sampled in Scotland and Wales. The variation in the physical and mechanical properties of UK-grown Douglas-fir were investigated to determine how strength and stiffness of Douglas-fir compares to other commercially important timber species in the UK (as well as compared to Douglas-fir grown in different countries). Standing and felled tree measurements relating to tree architecture and important for timber volume (e.g. size, height, branching habits and taper) were collected in the forest. This was followed by laboratory testing of wood samples obtained from those trees to determine important raw material properties. Ultimately this will enable some explanation and prediction of the variation in mechanical and physical properties in Douglas-fir. It was found that Douglas-fir is stronger, stiffer and denser than the UK's most planted conifer, Sitka spruce. Wood adjacent to the pith (middle of tree) termed as juvenile was weaker, less stiff and less dense. Within-tree variation accounted for most of the variation for the key properties of strength, stiffness and density. It was possible to build models for some of these properties based on cambial age (ring number from the pith). Considering branches, it was found that within-tree variation in size, frequency, angle and status (alive or dead) were highly variable but it was possible to build empirical models to describe branch architecture for a typical tree. It was possible to measure the rate of swelling in oven dry Douglas-fir in the radial and tangential dimensions, but swelling of the longitudinal dimension was below the limit of detection for the apparatus. Heartwood area can be successfully predicted from the diameter of tree at a given point. It is hoped the information in this study will detail some characteristic Douglas-fir traits that may be deemed beneficial for the timber construction industry and allow understanding of its variability plus provide important models to use in helping to describe Great Britain's forest resource.
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Hijazi, Hadi. "HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties." Thesis, Université Clermont Auvergne (2017-2020), 2019. http://www.theses.fr/2019CLFAC059.
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Alors que la croissance par HVPE de nanofils GaAs est bien maitrisée à l'Institut Pascal sur substrat de GaAs, quant à elle, la croissance sur substrats de silicium reste un sujet à développer. Dans ce travail, nous proposons dans le chapitre I un procédés expérimental permettant d'obtenir des nanofils de GaAs sur substrat de Si(111) par la voie VLS catalysée Au, accompagnés de structures larges appelées écailles. Ce procédé doit être optimiser si un rapport nanofils/écailles plus élevé est souhaité. Nous avons démontré par in-situ LEEM et LEED que les gouttelettes catalyseurs d'Au désoxydent la surface du substrat de Si(111) à haute températures (700 °C) et pompent des atomes de silicium du substrat. L'influence de ces atomes sur la nucléation des nanofils GaAs est étudiée par un modèle thermodynamique présenté dans le chapitre II. Aussi dans le même chapitre, nous présentons une étude de l'incorporation de ces atomes amphotériques de silicium dans le solide GaAs en fonction des paramètres de croissance. Le chapitre III consiste en une investigation du transport de charge et de spin par µPL polarisée dans les nanofils obtenus. Nous avons trouvé des longueurs de diffusion record à basse température dans des nanofils passivés à l'hydrazine et par N2-plasmaAu-catalyzed growth of GaAs nanowires by HVPE technique has been demonstrated in Institut Pascal many years ago on GaAs substrates. However, the current trend is to integrate these nanowires on silicon substrates, which appears to be very useful for some applications. It is the subject of the present work to develop such process using HVPE which an exceptional length along with very good crystalline quality of nanowires. This manuscript is organized into three chapters. Chapter I is devoted to present the experimental process allowing to obtain such nanowires on Si(111) substrates by Au-catalyzed. It contains also a study of the dewetting of ultra-thin gold films on oxidized Si(111) substrates as function of different parameters, in which we show also by in-situ LEEM and LEED experiments how these droplets remove the SiO2 from the surface and pump silicon atoms from the substrate. The influence of these silicon atoms on the nucleation of GaAs nanowires is presented in chapter II through a thermodynamic model. Another model is also presented in the same chapter in which we study the incorporation of the amphoteric silicon atoms in the solid phase as function of different growth parameters. Chapter III consists in an investigation of charge and spin transport using a polarized µPL experiment on ultra-long GaAs nanowires produced by HVPE. We study the effect of the surface passivation of these nanowires by hydrazine solution and N2-palsma. We report record diffusion lengths for both charge and spin
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Snelson, Jonathan Bundy. "Plant Growth and Root Zone Management of Greenhouse Grown Succulents." Thesis, Virginia Tech, 2012. http://hdl.handle.net/10919/32398.
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Effects of media, soil moisture, fertility rate, and plant growth regulators on plant growth were investigated for 13 taxa of succulents.
Media: Liners were grown in five common greenhouse substrates: 80% peat, 60% bark + 30% peat moss, 80% pine bark/20% Permatil (v/v), 100% composted pine bark, or whole tree substrate until market ready. Overall, higher percentage bark mixes yielded smaller plants, with lower shoot dry weights, shoot heights and widths.
Soil Moisture: Liners were potted into a 60% bark/30% peat soilless potting mix. In group 1 , irrigation to container capacity occurred when volumetric soil moisture content fell below 30%, 20%, or 10%,. Group two (seven species) irrigation thresholds were shifted to 35%, 25%, and 15%. Effects of irrigation rate were significant in three of the 13 species studied, and those effects were species-specific.
Fertility Rate: Liners were potted into60% bark/30% peat substrate. Fertility reatments in group were 0, 50, 100, or 200 mg.L-1 nitrogen. Group 2 plants received treatments of 50, 150, 250, or 350 mg.L-1 nitrogen. Four of the 11 species studied were affected by nitrogen rate, with rates up to 200 mg.L-1 generally producing the largest plants.
PGRs: Seven species were potted into a 60% bark/30% peat substrate. Group one plants were treated with a foliar application of benzyladenine (Configure) at rates of 0, 400, 800, or 1600 mg.L-1. Group 2 plants were treated either BA at 0, 250, 500, or 1000 mg.L-1, dikegulac sodium (Augeo) at 400, 800, or 1600 mg.L-1, or a tank mix of 500 mg.L-1 Configure and 800 mg.L-1 Augeo. BA caused an increase in branches leaders or offsets in two species.Master of Science
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Wicks, Ryan Christopher. "The growth of novel thin film oxides : calibrations, preliminary growths and quantitative characterizations." Thesis, University of British Columbia, 2007. http://hdl.handle.net/2429/32198.
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In this thesis, preliminary growths of SrCu0₂ epitaxial films were undertaken. Despite none of the growths yielding the desired stoichiometry or oxidation, the difficulties that were encountered, such as properly oxidizing the film, are demonstrated to be surmountable. The structure of the films was probed with RHEED, and found to display growth patterns that are consistent with epitaxial growth. The desire to perform future ARPES studies on this material imposes strict sample quality requirements and the need for the most accurate measurements of stoichiometry possible. This warranted an investigation of the properties of the SPECS PHOIBOS 150 hemispherical electron analyzer used to perform XPS measurements of films chemistry. The degree of non-linearity of the electron detection system was determined and a method introduced that could correct for it. Correcting for the transmission function of the analyzer was found to be a necessary step in quantitative chemical analysis. Therefore, transmission functions were measured using two techniques and were found to be in good agreement with calculated transmission functions provided by SPECS. While correcting for detector non-linearity and measuring the actual transmission function did not drastically alter the stoichiometry measurements for scans taken using reasonable analyzer settings for XPS (1% for the films grown in this thesis, mostly from detector non-linearity), it is possible to drive the analyzer into regimes where the corrections will be necessary. The methods used to first correct for the intensity response of the analyzer, and then the transmission function would be more applicable in these instances. The work performed in this thesis will ensure that future growths of SrCu0₂ films will yield samples of adequate quality to perform an ARPES study.Science, Faculty of
Physics and Astronomy, Department of
Graduate
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Nicollet, Andréa. "The influence of growth temperature on CVD grown graphene on SiC." Thesis, Linköpings universitet, Halvledarmaterial, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-119919.
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Graphene is one of the most popular material due to its promising properties, for instance electronics applications. Graphene films were grown on silicon carbide (SiC) substrate using chemical vapor deposition (CVD). Influence of the deposition temperature on the morphology of the films was investigated. Characterizations were done by reflectance mapping, atomic force microscopy and Raman spectroscopy. Two samples were done by sublimation process, to compare the number of layers and the morphology of the graphene films with the one grown by chemical vapor deposition.The reflectance mapping showed that the number of layers on the samples made by CVD was notinfluenced by the deposition temperature. But also, demonstrated that sublimation growth is present in allthe samples due to the presence of silicon coating in the susceptor. The growth probably started by sublimation and then CVD deposition. The step morphology characteristic of the silicon carbide substrate surface was conserved during the deposition of graphene. But due to surface step bunching, a decrease inthe step height occurred and the width of the terraces increased. The decreasing in deposition temperature leads to a smoother surface with the CVD method. Raman spectroscopy confirmed the presence ofgraphene and of the buffer layer characteristic of the sublimation growth. Moreover, it demonstrated the presence of compressive strain in the graphene layers.
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Karandikar, Atul. "Streptomyces coelicolor A3(2) : growth and differentiation of surface grown cultures." Thesis, Liverpool John Moores University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242153.
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Lindquist, Miles T. "Investigation of growth parameters for as-grown 2D materials- based devices." Ohio University Honors Tutorial College / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1492781232538674.
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Rethwisch, Michael D., Dick Beckstead, and Larry Parker. "Effect of a Plant Growth Regulator on Green Beans Grown for Processing." College of Agriculture, University of Arizona (Tucson, AZ), 1996. http://hdl.handle.net/10150/214770.
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Three rates of the plant growth regulator Foliar Triggrr were applied to green beans grown for processing at 5% bloom. The 6 oz rate increased yields of size 1 and 2 beans compared to all other treatments and the untreated check and had the fewest size 3 beans (which would be culls). The 11 oz rate was similar to the untreated check while the 16 oz rate decreased yields. Total bean numbers per plant were similar. Although treatment differences in this experiment were not statistically significant, a yield increase of 10.2% for the 6 oz rate compared with the untreated check may well result in increased economic returns.
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Vedantham, Kumar. "Effect of operating parameters on the growth rate of solution grown crystals." Master's thesis, Mississippi State : Mississippi State University, 2004. http://library.msstate.edu/etd/show.asp?etd=etd-07122004-101317.
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Makaronidis, Georgios. "Influence of growth parameters on the structural quality of MOCVD grown GaN." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616243.
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Houghton, Richard F. "The growth and evaluation of epilayers grown by silicon molecular beam epitaxy." Thesis, University of Warwick, 1991. http://wrap.warwick.ac.uk/108764/.
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The aim of this work was to evaluate and improve the quality of epilayers grown by silicon molecular beam epitaxy (Si-MBE). The first thorough study was carried out on substrate preparation, specifically aimed at the unique conditions that arise during MBE growth. This included both ex-situ wet chemical cleans, and by in-situ thermal desorption with the aid of Si evaporation to remove surface oxide. This enabled the development of a low thermal budget cleaning technique which ideally complemented the low growth temperatures attainable during MBE, one of the technique’s major advantages. This cleaning method consisted of ex-situ oxide removal in 2.5% HF solution, followed by in-situ thermal treatment at 700°C for 7 minutes with the aid of a 10A capping layer. The dependence of residual doping on growth parameters, and the electrical and optical properties of residually doped epilayers were studied in detail for the first time. Knowledge of these factors is vital for the design of devices in which the carriers are separated from the ionised impurities that give rise to them. The background dopant was identified as phosphorus. The effect or substrate temperature on chemical purity and crystalline perfection was then studied to determine the optimum temperature for growth. The presence of electrically active traps was analysed by deep level transient spectroscopy, and their concentration was found to fall to a minimum above 600°C. Conversely, crystalline perfection, as determined by a defect revealing etch, was found to increase as temperature decreased, reaching a optimum between 500° and 600°C for the growth rates available during this work. The use of Ga and B as p-type dopants in Si-MBE was studied. The deficiencies of Ga as a dopant in MBE were explored and explained. To overcome boron’s only major weakness, its low vapour pressure, a novel elemental B coevaporation source was designed and constructed, which has now been universally adopted as the method of B coevaporation for MBE. This allows contamination free doping with an industry-standard dopant that exhibits excellent electrical properties. A new model for the incorporation enhancement seen with some dopants during the use of the technique known as potential enhanced doping (PED) is also proposed, involving the incorporation of atoms at damage sites caused by impingent Si+ ions. Computer modelling illustrated the feasibility of the hypothesis compared to secondary implantation, until now the most widely used model. The development of the new elemental B source enabled the author to grow the first successful p-type atomic layer (delta) doped epilayers. These had considerable advantages over their n-type, Sb-doped counterparts, due to B’s more appropriate incorporation kinetics.
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Knowles, Tim C., Newt Wright, and Chip Sherrill. "Growth Characteristics, Hay Yield, and Feed Quality of Kenaf Grown in Mohave Valley." College of Agriculture, University of Arizona (Tucson, AZ), 1999. http://hdl.handle.net/10150/205164.
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Kenaf was grown as a hay crop in Mohave Valley to determine its growth characteristics, hay yield, and feed quality. The first cutting occurred 75 days after planting when plants were approximately 30 inches tall and had 30 nodes. Hay tonnage was only 1,000 lbs dry matter/acre, crude protein was 20.7 %, ADF was 40.2 %, and TDN was 57.5 %. Forage quality was adequate for beef cattle and sheep.
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Palmer, James Matthew. "Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/54293.
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For graphene to be a viable platform for nanoscale devices, high quality growth and structures are necessary. This means structuring the SiC surface to prevent graphene from having to be patterned using standard microelectronic processes. Presented in this thesis are new processes aimed at improving the graphene as well as devices based on high quality graphene nanoribbons. Amorphous carbon (aC) corrals deposited prior to graphene growth are demonstrated to control SiC step-flow. SiC steps are shown to be aligned by the presence of the corrals and can increase SiC terrace widths. aC contacts deposited and crystallized during graphene growth are shown as a way to contact graphene without metal lift-off. Observation of the Quantum Hall Effect demonstrates the high quality of the graphene grown alongside the nanocrystalline graphite contacts. Continuing the ballistic transport measurements on sidewall graphene nanoribbons, the invasive probe effect is observed using an atomic force microscope (AFM) based technique that spatially maps the invasive probe effect. Cleaning experiments demonstrate the role of scattering due to resist residues and environmental adsorbates on graphene nanoribbons. Finally, switches based on junctions formed in the graphene nanoribbons are shown as a route toward graphene based devices.
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Peksel, Begum. "Proteome Analysis Of Hydrogen Production Mechanism Of Rhodobacter Capsulatus Grown On Different Growth Conditions." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614133/index.pdf.
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Rhodobacter capsulatus is a versatile organism capable of growing on different growth conditions including photofermentation in the presence of carbon source, aerobic respiration, anaerobic respiration in the presence of an external electron acceptor such as DMSO. The photofermentative growth of R.capsulatus results in hydrogen production which stands out as an environmentally harmless method to produce hydrogen and accepted as one of the most promising process. Due to the serious problems such as as global climate change and environmental pollution caused by the fossil fuels, there is an increasing requirement for a clean and sustainable energy source. Furtherrmore, the ability of R.capsulatus to fix nitrogen, to use solar energy makes it a model to study various aspects of its metabolism. Thus the goal of this study is to increase the potential in biohydrogen production with the photofermentative bacteria and to investigate the proteins playing roles in different growth modes of the bacteria.
In the present study, protein profiles of Rhodobacter capsulatus grown on respiratory, anaerobic respiratory and photofermentative growth modes were obtained. LC-MS/MS system is used to analyze the proteome as a high throughput technique. Physiological analysis such as HPLC for the analysis of the carbon source consumption, GC and analysis of pigments were carried out to state the environmental conditions. As a result, total of 460 proteins were identified with 17 proteins being unique to particular growth condition. Ratios of the proteins in different growth conditions were compared and important proteins were highlighted.
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Alevli, Mustafa. "Growth and Characterization of Indium Nitride Layers Grown by High-Pressure Chemical Vapor Deposition." Digital Archive @ GSU, 2008. http://digitalarchive.gsu.edu/phy_astr_diss/24.
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In this research the growth of InN epilayers by high-pressure chemical vapor deposition (HPCVD) and structural, optical properties of HPCVD grown InN layers has been studied. We demonstrated that the HPCVD approach suppresses the thermal decomposition of InN, and therefore extends the processing parameters towards the higher growth temperatures (up to 1100K for reactor pressures of 15 bar, molar ammonia and TMI ratios around 800, and a carrier gas flow of 12 slm). Structural and surface morphology studies of InN thin layers have been performed by X-ray diffraction, low energy electron diffraction (LEED), auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (HREELS) and atomic force microscopy (AFM). Raman spectroscopy, infrared reflection, transmission, photoluminescence spectroscopy studies have been carried out to investigate the structural and optical properties of InN films grown on sapphire and GaN/sapphire templates. InN layers grown on a GaN (0002) epilayer exhibit single-phase InN (0002) X-ray diffraction peaks with a full width at half maximum (FWHM) around 200 arcsec. Auger electron spectroscopy confirmed the cleanliness of the surface, and low energy electron diffraction yielded a 1×1 hexagonal pattern indicating a well-ordered surface. The plasmon excitations are shifted to lower energies in HREEL spectra due to the higher carrier concentration at the surface than in the bulk, suggesting a surface electron accumulation. The surface roughness of samples grown on GaN templates is found to be smoother (roughness of 9 nm) compared to the samples grown on sapphire. We found that the deposition sometimes led to the growth of 3 dimensional hexagonal InN pyramids. Results obtained from Raman and IR reflectance measurements are used to estimate the free carrier concentrations, which were found in the range from mid 10^18 cm-3 to low 10^20 cm-3. The optical absorption edge energy calculated from the transmission spectra is 1.2 eV for samples of lower electron concentration. The Raman analysis revealed a high-quality crystalline layer with a FWHM for the E2(high) peak around 6.9 cm^-1. The results presented in our study suggest that the optimum molar ratio might be below 800, which is due to the efficient cracking of the ammonia precursor at the high reactor pressure and high growth temperature.
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Alevli, Mustafa. "Growth and characterezation of indium nitride layers grown by high-pressure chemical vapor deposition." unrestricted, 2008. http://etd.gsu.edu/theses/available/etd-04212008-154425/.
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Thesis (Ph. D.)--Georgia State University, 2008.Title from file title page. Nikolaus Dietz, committee chair, Brian Thoms, A. G. Unil Perera, Xiaochun He, committee members. Electronic text (215 p. : col. ill.) : digital, PDF file. Description based on contents viewed on July 14, 2008. Includes bibliographical references (p. 209-215).
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Mihail, J. D., J. K. Brown, and M. R. Nelson. "The Effects of Cotton Leaf Crumple on Greenhouse-Grown Cotton Incoulated at Five Growth Stages." College of Agriculture, University of Arizona (Tucson, AZ), 1987. http://hdl.handle.net/10150/204510.
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The effects of cotton leaf crumple disease on components of yield and on symptom expression were examined for cotton inoculated at five growth stages. As a result of virus infection, the total leaf area was reduced and significant reductions in yield were observed, regardless of plant age at time of inoculation. Yield reductions resulted from a smaller number of bolls set and/or a decrease in boll weight. Foliar symptoms were associated with plants inoculated at all five growth stages, but were observed sooner and were more severe for plants inoculated at the 2-3, 5-8, and 8-10 leaf stages than those inoculated at the 14-16 or 18-20 leaf stages.
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Ptak, Aaron J. "Growth kinetics and doping of gallium nitride grown by RF-plasma assisted molecular beam epitaxy." Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=1895.
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Thesis (Ph. D.)--West Virginia University, 2001.Title from document title page. Document formatted into pages; contains xvii, 161 p. : ill. Includes abstract. Includes bibliographical references (p. 154-161).
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Lelis, Francisco Carlos Lima. "Evaluation of the growth of seaweed Gracilaria birdiae (Gracilariales, Rhodophyta) grown in long-line structure." Universidade Federal do CearÃ, 2006. http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=7593.
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FundaÃÃo Cearense de Apoio ao Desenvolvimento Cientifico e TecnolÃgicoA presente dissertaÃÃo analisa o efeito da luminosidade no crescimento da alga marinha Gracilaria birdiae atravÃs da taxa de crescimento especÃfico (TCE) e aumento de biomassa em diferentes profundidades. Foi utilizada estrutura do tipo long-line com corda principal medindo 25m e 10 cordas secundÃrias de 2,5m instalaÃÃo a 200m da costa com profundidade entre 5 e 6 m (marà seca). Foram fixadas 12 mudas por corda secundÃria com espaÃamento de 20cm compondo 12 linhas de profundidade. Com 30 dias realizou-se a pesagem de todas as mudas da estrutura identificadas por corda secundÃria e linha de profundidade. Com 60 e 90 dias a pesagem foi apenas nas linhas de profundidade que apresentavam mudas em melhores condiÃÃes fÃsicas. Nas profundidades testadas de 0,2 a 2,4m, observou-se um melhor desempenho do crescimento como tambÃm melhor aparÃncia e condiÃÃo fÃsica das mudas fixadas de 0,2 a 1,2m, enquanto as fixadas entre 1,4 a 1,8m ou tiveram crescimento inferior ou praticamente nÃo cresceram, e as fixadas no limite inferior entre 2,0 e 2,4m verificou-se atrofiamento das mudas. Os pesos mÃdios obtidos apresentaram diferenÃa estatÃstica significativa (F = 187,104; p = 0,05). A TCE demonstrou correlaÃÃo negativa com a profundidade (r = - 0,95; p = 0,05; n = 120). Nas profundidades mais prÃximas da superfÃcie de 0,2 a 0,6m favoreceram o crescimento das algas alcanÃando pesos de 167,5 a 147,0g e TCE de 2,92 e 2,69% dia-1, entre 0,8 a 1,2m pesos de 139,0 a 124,0g e TCE de 2,29 a 1,90% dia-1, e a partir de 1,4m atà 2,4m pesos de 94,5 a 59,5g e TCE de 0,9 a 0,53% dia-1. A reduÃÃo nos pesos abaixo de 1,2m foi bastante acentuada evidenciando que as algas tiveram detrimento em seu crescimento com a reduÃÃo da intensidade luminosidade apresentando atrofiamento de algumas mudas fixadas nas extremidades das cordas. Os parÃmetros da Ãgua na Ãrea do cultivo temperatura, salinidade e grau de transparÃncia da Ãgua apresentaram mÃdias de 29,6  2,41 ÂC, 35,6  1,49 â e 1,20  0,76 m. No final do perÃodo experimental (90 dias) as mudas atingiram peso final de 937,0g, ideal para colheita. Para Gracilaria birdiae, a luminosidade foi o fator ambiental que afetou efetivamente sua TCE e produÃÃo de biomassa, apresentando nas condiÃÃes do cultivo, crescimento satisfatÃrio atà a profundidade de 1,2m onde as mudas atingiram peso mÃdio de 124,0  9,94 g e TCE de 1,90 %dia-1.
To present dissertation it analyzes the effect of the brightness in the growth of the alga sea Gracilaria birdiae through the rate of specific growth (TCE) and biomass increase in different depths. A structure of the type long-line was used with main rope measuring 25m and 10 sec ondary strings of 2,5m installation to 200m of the coast with depth between 5m and 6m (tide evaporates). 12 seedlings were fastened by secondary rope with spacing of 20cm composing 12 depth lines. With 30 days it accomplished the measure of the weights of the seedlings of the structure identified by secondary rope and depth line. With 60 and 90 days the measure of the weights was just in the depth lines that presented seedlings in better physical conditions. In the tested depths from 0,2 to 2,4m, it was observed a better acting of the growth as well as better appearance and physical condition of the fastened seedlings from 0,2m to 1,2m, while fastened them from 1,4m to 1,8m or they had inferior growth or practically they didn't grow , and fastened them in the inferior limit from 2,0 to 2,4m reduced growth of the seedlings it was verified. The obtained medium weights presented significant statistical difference (F = 187,104; p = 0,05). TCE demonstrated negative correlation with the dept h (r = - 0,95; p = 0,05; n = 120). In the closest depths of the surface from 0,2 to 0,6m favored the growth of the algae reaching weights from 167,5 to 147,0g and TCE 2,92 and 2,69% day-1, among 0,8m to 1,2m weights from 139,0 to 124,0g and TCE fr om 2,29 to 1,90% day-1, and starting from 1,4m until 2,4m weights from 94,5 to 59,5g and TCE 0,9 to 0,53% day-1. The reduction in the weights below 1,2 m was quite accentuated evidencing that the algae had detriment in your growth with the reduction of the intensity brightness presenting reduced growth of some you change fastened in the extremities of the strings. The parameters of the water in the area of the cultivation temperature, salinity and degree of transparency of the water presented averages of 29,6 Â 2,41ÂC, 35,6 Â 1,49â and 1,20 Â 0,76m. In the end of the experimental period (90 days) the seedlings reached final weight of 937,0g, ideal for crop. For Gracilaria birdiae, the brightness was the environmental factor that it affected your TCE and biomass production indeed, presenting in the conditions of the cultivation, satisfactory growth until the depth of 1,2m where the seedlings reached weight of 124,0 Â 9,94 g and TCE of 1,90 %dia-1.
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Hoque, A. K. M. Azizul. "Synthesis of catalyst particles for carbon fiber growth in a Vapor Grown Carbon Fiber reactor." Ohio University / OhioLINK, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1174617623.
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Walker, Loni Marie. "Gravitropism and tip growth in apical cells of dark-grown protonemata of the moss Ceratodon /." The Ohio State University, 1994. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487849696965447.
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Goff, Lucy Elizabeth. "Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE." Thesis, University of Nottingham, 2015. http://eprints.nottingham.ac.uk/30204/.
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This thesis describes the growth and characterisation of gallium nitride, indium nitride and indium gallium nitride semiconductors primarily carried out using a novel growth technique called Anion Modulation Epitaxy (AME) and also plasma-assisted MBE (PA-MBE). Characterisation was typically performed by x-ray diffraction, scanning electron microscopy and optical reflectance studies. All of the work in this thesis was carried out in the hope to improve layer structure and quality which in turn would create higher efficiency solar cells. Nanorods were grown using PA-MBE as these are known to form entirely defect-free material and this would be an attractive quality when trying to increase the efficiency. InN rods were grown at temperatures between 350 C and 450 C on SiC substrates of both Si- and C-polar faces at various indium fluxes to establish optimal growth conditions. It was found that a BEP flux of approximately 2x10-7 Torr and a growth temperature approximately 400 C provided a large array of rods. Samples produced tall, thin nanorods as well as short, fat ones. CBED analysis revealed that the tall nanorods were growing In-polar which mimics the behaviour seen for GaN. Photoluminscence (PL) data for the rods agrees with the bulk PL measurement of InN in the literature confirming that reasonable quality films have been produced. Coalescence of the rods was achieved by increasing the flux to 2x10-6 Torr. Also, p-n junctions were grown on both faces of SiC and preliminary tests have shown a response to light. A new growth method was developed from conventional PA-MBE known as Anion Modulation Epitaxy (AME) and gives rise to improved growth compared with equivalent samples by PA-MBE as the growth temperature is decreased. It also allows p-doping for GaN to be carried out at lower temperatures and more consistently. Direct comparison of GaN samples grown at equivalent temperatures by PA-MBE and AME show improved structural, electrical and optical properties for the samples grown using AME. It has also proven to be a useful tool for studying temperature changes at the substrate surface when using any pulsed growth technique. Substrate temperature was shown to vary by approximately 15 C each time the flow was interrupted. Slower, long-term trends were also monitored depending on the average nitrogen to metal ratio. An increase in overall temperature is derived from increasing metal rich growth, whereas the opposite effect is true for increased nitrogen rich growth. AME was also used for the growth of intermediate band solar cells (IBSC). The entire growth is easily monitored and altered using AME without altering the growth parameters drastically. Pulsing the nitrogen allows for variations in the metal cell fluxes to be kept under control at the surface. The discovery of `hidden' metal in the layer would have taken a lot longer to discover, and would have ruined the sample without utilising AME.
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Griffiths, Leigh. "Angiogenic growth factors in tumour growth." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312384.
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Bayley, Christopher. "Growth factor interactions with platelet-derived growth factor receptor alpha." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/growth-factor-interactions-with-plateletderived-growth-factor-receptor-alpha(a263bc70-8de0-4168-bda4-a3b1b05a2c0f).html.
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The interaction between a growth factor and the extracellular region of its receptor is the first step in triggering the intracellular signalling pathways that induce a change in cell phenotype. Several platelet-derived growth factors (PDGFs) each bind to and activate PDGF receptor (PDGFR) alpha, a transmembrane receptor tyrosine kinase that simulates proliferation and migration in cells of mesenchymal origin. PDGFR alpha itself activates several intracellular signalling pathways. Thus, the possibility exists that different growth factors interact with PDGFR alpha in distinct ways to elicit divergent cellular effects. This possibility was investigated by examining the interactions that occur between the extracellular region of PDGFR alpha and three growth factors: PDGF-AA, PDGF-BB and vascular endothelial growth factor-A165 (VEGF-A165). The extracellular region of PDGFR alpha, and fragments thereof, were recombinantly expressed by mammalian 293-EBNA cells. The affinities of the protein fragments for each of the three growth factors were assayed by solid phase binding analysis. Each growth factor had a different affinity both for the extracellular region of PDGFR alpha and the fragments of that region, indicating that they differentially interact with the receptor. These different growth factor/receptor interactions were further investigated by substituting charged amino acids for uncharged residues in the putative ligand binding domain of PDGFR alpha. The amino acids selected for substitution were analogous to residues that had been shown to form direct contacts with growth factors in growth factor/receptor systems that are evolutionarily related to PDGFR alpha. Mutants of the PDGFR alpha ectodomain were generated by site-directed mutagenesis, and their growth factor binding properties were subsequently assayed. Particular mutants had differential effects on growth factor binding to PDGFR alpha. For example, the K209A mutant had no effect on PDGF-AA binding to the receptor, compared to wild-type, but it had a lower affinity for PDGF-BB and a greater affinity for VEGF-A165, compared to wild-type. These data demonstrated that the examined growth factors form subtly different interactions with PDGFR alpha. Thus, it is likely that each growth factor induces a distinct conformational change in the receptor upon binding. In this way, different growth factors may elicit divergent cellular effects through the same receptor.
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Fitzgerald, Peter. "Growth." VCU Scholars Compass, 2006. http://hdl.handle.net/10156/1789.
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Constantin, Costel. "Growth, Structural, Electronic and Optical Characterization of Nitride Semiconductors Grown by rf-Plasma Molecular Beam Epitaxy." Ohio : Ohio University, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1132008963.
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Hartleb, John L. "Factors influencing the survival and growth of greenhouse-grown and field-planted Arundinaria gigantea (Walt.) Muhl /." Available to subscribers only, 2007. http://proquest.umi.com/pqdweb?did=1456289161&sid=11&Fmt=2&clientId=1509&RQT=309&VName=PQD.
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Juraeva, Dilafruz. "Study the possible mechanisms of plant growth promotion by wheat diazotrophic bacteria grown in Uzbekistan soil." Doctoral thesis, Humboldt-Universität zu Berlin, Landwirtschaftlich-Gärtnerische Fakultät, 2011. http://dx.doi.org/10.18452/16326.
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Das Pflanzenwachstum fördernde Bakterien (PGPB) kommen ubiquitär sowohl an der Wurzel als auch am Spross der Pflanzen vor und sie können über direkte oder indirekte Mechanismen einen bedeutenden Beitrag zur Stickstoffernährung der Pflanzen leisten. Die vorliegende Arbeit umfasst a) die Isolierung von PGPB, welche das Wachstum verschiedener Pflanzenarten fördern und durch Fusarien verursachte Pflanzenkrankheiten bekämpfen, b) die Analyse der Möglichkeiten Probleme der Pflanzenernährung durch den Einsatz von PGPB zu lösen, c) die Entwicklung neuer molekularbiologischer Methoden zur Messung der Diversität und Aktivität der PGPB. Im Rahmen dieser Arbeit wurden Methoden zur Beschreibung der Diversität von rhizosphären PGPB entwickelt und verbessert um Verbindungen zwischen applizierten PGPB und deren Aktivitäten zu prüfen. Die sensitive quantitative real-time-PCR Methode wurde zur Quantifizierung bzw. zum Nachweis der inokulierten PGPB und zum Nachweis des nitrogenase-reduktase-Gens (nifH), des Markergens für potentiell diazotrophe Bakterien. Bakterienartspezifische Primer wurden aus dem Sequenzvergleich der 16S-23S ISR ausgewählter Bakterienstämme selektiert und Protokolle zur Quantifizierung dieser Bakterienarten erarbeitet. Die nifH Gen Quantifizierung an Pflanzen eröffnet die Möglichkeit Schlüsselorganismen in der assoziativen biologischen Luftstickstoffbindung zu identifizieren und kurzfristige Reaktionen der Bakteriengesellschaften auf Umweltveränderungen und Regulationsmechanismen in situ zu analysieren.Plant growth promoting bacteria (PGPB) are ubiquitous in both plant root and shoot, and are important contributors to the nitrogen-input of plants exerting their positive effects on plant growth directly or indirectly through different mechanisms. The present work focuses on a) the isolation of PGPB, which promotes the growth of different plant cultures and controls plant diseases caused by Fusarium species, b) the prospects of PGPB to solve plant nutritional problems, c) developing new molecular methods for the assessment of their diversity and activity. In the frame of this thesis, the methods for the description of the diversity of root colonizing PGPB have been developed and improved to provide links between introduced PGPB abundance and activities. The approach used was based on the sensitive real – time PCR detection/quantification of introduced PGBP and the nitrogenase reductase gene (nifH), which served as a marker gene for potential diazotrophs. The amplified 16S-23S ISR sequences of studied bacteria were subjected to strain – specific primer design and a highly specific bacteria quantification protocol were developed. The bacteria quantification protocol was based on real – time PCR using strain specific primers in order to evaluate the colonization ability of studied bacteria, which were inoculated to plant roots. The results presented in this thesis have shown that monitoring of nifH amount in plant root is a suitable and promising approach to link inoculated diazotrophic bacteria abundance and its potential activity. The study of nifH gene abundance in plant offers the opportunity to identify key players in asymbiotic nitrogen fixation, to study short-term community responses in changing environments, or to analyze the effect of regulation in situ.
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Lu, Q. "Growth, dielectrics properties, and reliability of high-k thin films grown on Si and Ge substrates." Thesis, University of Liverpool, 2017. http://livrepository.liverpool.ac.uk/3013042/.
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Ester, Guy R. "An atomic force microscopy study of the crystal growth interface of solution grown potassium hydrogen phthalate." Thesis, University of Bath, 1999. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299809.
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Wright, Amy Noelle. "Influence of Lime and Micronutrient Amendments on Growth of Containerized Landscape Trees Grown in Pine Bark." Thesis, Virginia Tech, 1998. http://hdl.handle.net/10919/36955.
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Growing landscape trees in containers is a common practice in the nursery industry. In the southeastern United States, pine bark is often used as a container substrate, and two common amendments to pine bark are lime and micronutrients. In this study, three experiments were conducted to determine the effect of these amendments on the growth of a wide range of landscape tree species grown in pine bark. In the first experiment, nine species of landscape trees [Acer palmatum (Japanese maple), Acer saccharum (sugar maple), Cercis canadensis (redbud), Cornus florida (flowering dogwood), Cornus kousa (kousa dogwood), Koelreuteria paniculata (golden-rain tree), Magnolia x soulangiana (magnolia), Nyssa sylvatica (blackgum), and Quercus palustris (pin oak)] were grown from seed in two pine barks: pH 4.7 (low) and 5.1 (high). Preplant amendment treatments to each pine bark (Pinus taeda) were: with or without dolomitic limestone (3.57 kg.m-3) and with or without micronutrients (0.9 kg.m-3, Micromaxâ ¢). The same experiment was repeated using Koelreuteria paniculata and Quercus palustris, the same lime and micronutrient treatments, and two pine barks: pH 5.1 (low) and 5.8 (high). In both experiments, micronutrients increased shoot dry mass and height for all species, while lime decreased shoot dry mass and height for all species. Effect of bark type in the first experiment was variable, while shoot dry mass and height were highest in the low pH bark when the experiment was repeated. Substrate solution element concentrations increased when micronutrients were added, decreased when lime was added, and in general, concentrations were higher in low pH bark than in high pH bark. In the third experiment, Koelreuteria paniculata was grown from seed in pine bark amended with 0, 1.2, 2.4, or 3.6 kg.m-3 dolomitic limestone and 0 or 0.9 kg.m-3 micronutrients (Micromaxâ ¢). Initial pH for each lime rate was 4.0, 4.5, 5.0, and 5.5, respectively. Adding micronutrients increased shoot dry mass and height. Lime increased growth only at the 1.2 kg.m-3 rate. In general, substrate solution element concentrations increased when micronutrients were added and decreased when lime was added. In all three experiments, adding micronutrients was necessary regardless of pine bark pH, while adding lime was not necessary.Master of Science
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Ross, Erin Sundseth. "Early growth faltering predicts longitudinal growth failure /." Connect to full text via ProQuest. Limited to UCD Anschutz Medical Campus, 2007.
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Thesis (Ph.D. in Clinical Science) -- University of Colorado Denver, 2007.Typescript. Includes bibliographical references (leaves 130-146). Free to UCD affiliates. Online version available via ProQuest Digital Dissertations;
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陳蒓 and Tzun Rachel Chan. "Growth hormone therapy for growth hormone deficiency." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31970308.
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Chan, Tzun Rachel. "Growth hormone therapy for growth hormone deficiency." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B22926288.
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Ochoa, Banafsheh K. "Maxillary growth in comparison to mandibular growth." Oklahoma City : [s.n.], 2002. http://library.ouhsc.edu/epub/theses/Ochoa-Banafsheh-K.pdf.
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Dinis, Ariane Vaz. "Growth accounting: how institutions affect Portugal's growth." Master's thesis, NSBE - UNL, 2013. http://hdl.handle.net/10362/11596.
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A Work Project, presented as part of the requirements for the Award of a Masters Degree in Economics from the NOVA – School of Business and EconomicsThe main objective of this Work Project (WP) is to understand whether institutional quality has been determinant to the increase of Portugal's productivity. This WP provides a sector-wise Growth Accounting exercise and analyzes the Total Factor Productivity (TFP) growth. Secondly, it uses a cross-country approach to understand which institutional indicators influence TFP growth. This WP considers, based on GMM estimation, different models to capture the causality between productivity growth and Institutional Quality. The results obtained reveal a positive relation between TFP growth and Institutional Quality.
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ABUDULIMU, ABASI. "Effectof Growth Time, Growth Temperature and Light on Growth Mechanism of C60 nanorods." Thesis, Umeå universitet, Institutionen för fysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-79368.
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In this thesis work C60 nanorods were produced by Liquid-Liquid Interfacial Precipitation method (LLIP) assisted with 10 s of weak sonication. Ethanol and m-dichlorobenzene were used as poor and good solvents of C60, respectively. Five different temperatures, 4, 10, 20, 30, 40 and 50 , were chosen as growth temperatures of different samples to investigate the effect of temperature on the grown structures. Different samples were prepared in the dark and under the light with various growth time to determine the effect of light and growth time on growth of C60 nanorods. The characterization of the grown C60 nanorods were conducted by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The result of characterization indicated that the sonication introduced smaller C60 nanostructures; light irradiation and temperature increase (till 40 C0) during the growth time resulted in nanorods with smaller diameter, whereas the long growth time lead to the increase of the diameter of C60 nanorods. The as-grown C60 nanorods synthesized at different conditions possess an hcp crystal structure.
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Ruddiman, Elizabeth P. "Is Smart Growth Fair Growth: Do Urban Growth Boundaries Keep out Racial Minorities?" unrestricted, 2007. http://etd.gsu.edu/theses/available/etd-08062007-090141/.
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Thesis (Ph. D.)--Georgia State University, 2007.Title from file title page. Charles Jaret , committee chair; Robert Adelman, Donald Reitzes, committee members. Electronic text (96 p. : ill.) : digital, PDF file. Description based on contents viewed Nov. 1, 2007. Includes bibliographical references (p. 88-94).
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Mogos, Serban Ioan. "High Growth Entrepreneurship: A Multi-Level Perspective on Firm Growth and Growth Policy." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/1106.
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Entrepreneurship is the force that drives economic, social and technical progress. A small percentage of firms (5%) is responsible for a disproportionately large amount of net job creation (>50%). Named high growth firms, these successful enterprises have been in the spotlight of research looking into the key drivers of firm growth and growth policy. This dissertation explores high growth from multiple perspectives: at the level of the firm, by understanding how the definition of a high growth firm impacts its characteristics and expected performance over time; at the local level, by isolating the effect of political connections of firm performance and firm entry; and at the macro level, by observing the evolution of entrepreneurship during transition. The first study finds that most HGFs are unable to maintain high growth rates for long, but do register lower volatility in growth rates and a higher chance of survival. Results on growth volatility and persistence vary significantly with the specific definition of “high growth” used as well as with the specific variable used to measure growth (e.g., revenue, employees, profit, productivity). These findings have direct implications for growth policies and programs that depend on identifying HGFs. The second study indicates a strong significant effect of political alignment on revenue growth and firm entry. Larger firms take advantage of political connections for performance gains, while small firms are negatively impacted. Furthermore, alignment reduces entry into entrepreneurship by 8-11%. These findings establish political alignment and local-level business-politics collusion as important dynamics to consider when evaluating entrepreneurship policy in developing countries. The third study describes the interdependence between entrepreneurship, institutions, and transitions. The case of Romania shows that the beginning of transition was characterized by an initial explosion of newly created private enterprises, followed by a declining trend in enterprise creation and, recently, by a new increase in entrepreneurship activity. To conclude, this work contributes new perspectives towards a better understanding of high growth firms and growth policy. Policy implications are targeted towards transition and developing economies that have seen little representation in literature. The goal is to enable successful high growth policies across multiple levels.
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Sia, Vicente Y. "Factors affecting church growth in selected Filipino-Chinese churches." Online full text .pdf document, available to Fuller patrons only, 2004. http://www.tren.com.
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Burns, Jason Lee. "Growth control by insulin-like growth factor II." Thesis, University of Oxford, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270285.
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Magrini, Samantha H. "Bone Growth: The Wake of the Growth Plate." Kent State University / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=kent162669258742215.
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Borisova, Svetlana [Verfasser]. "Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE / Svetlana Borisova." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012. http://d-nb.info/1024800687/34.
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CHEN, XI-MIN, and 陳錫銘. "The growth mechanisms of low temperature growth and defect structures of GaSb grown by MOCVD." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/03173739625112354653.
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McClure, Steven Minor. "Growth, morphology, and use of arc-grown carbon nanotubes." Thesis, 1995. http://hdl.handle.net/1911/13975.
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Studies were performed to determine the mechanism whereby carbon nanotubes form in an electric arc. Various experimental parameters including cathode cooling, composition, and diameter were varied. It was found that tube-tube sintering is a primary reason for tube defects, and that this effect can be minimized by reducing the temperature of the cathode where the tubes grow. The investigations also led to the pseudo-convection growth model, which explains many features of the cathode deposits in which tubes form. Various other means of nanotube growth were studied. Possible uses for these nanotubes were also explored.
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Tsai, Zong-Ye, and 蔡宗燁. "The growth characteristic of aeroponically-grown six leafy vegetable." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/76345199295315166406.
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碩士國立中興大學
農藝學系所
104
A plant factory is a controlled environment for plant production systems with artificial light, temperature, humidity, carbon dioxide, water supply, and nutrients. Due to the high operation and start-up cost of plant factories, the plant factory system is most often used to cultivate leafy vegetables that have a high-profit return and require to develop a more efficient production systems. In this study, five common lettuce cultivars including sword lettuce (Lactuca sativa L. var. sativa bisch), red fire lettuce (Lactuca sativa L. var. crispa cv Red Fire), butterhead lettuce (Lactuca sativa L. var. capitata cv Butterhead), antlers shaped lettuce (Lactuca sativa L. var. sativa bisch x Pterocypsela), green romaine lettuce (Lactuca sativa L. var. longifolia cv Green), and one Brassica variety tatsoi (Brassica narinosa L.) are selected as high-profit return materials and conducted to test the feasibility of three stage cultured method based on plant size for leafy vegetables in fully controlled plant factory with aeroponic culture. Growth data collected from the experiment of three stage culture show the typical sigmoid pattern and reach harvestable weight within 28 days of cultivation except for red fire lettuce which will take 42 days. Rapid growth rate will appear at last week and depend on the variety. Comparison of aeroponic and field-produced leafy vegetables show that the hydroponic plants grown faster, accumulate more biomass than the field-produced plants except green romaine and red fire lettuce. Plants grown at field show the higher transpiration rate, while plants grown at plant factory exhibited the greater intercellular CO2 concentration. However, nitrate content in all tested plants is lower than 2000 ppm which agree with EUs regulation. These results demonstrate that three stages culture is an efficient leafy vegetables production system. In addition, the effects of partial replacement of nutrient on plant growth are also investigated. Biomass data indicate that there are not significant difference between noncirculating method and reused nutrient culture except tatsoi and green romaine lettuce. Analysis of residues show that sword lettuce accumulate more nitrogen, phosphate, and potassium element than the others while red fire lettuce need more calcium and magnesium. The absorption of different kinds of mineral element depends on the variety. Further investigation on mineral consumption during recycle aeroponic culture will provide useful information for nutrient management.
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Yang, Tzu-Te, and 楊子德. "Influences of growth interruption on InN islands grown by MOCVD." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/24255220432401967360.
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碩士國立交通大學
電子物理系所
96
We introduced repetitive growth interruptions for successfully growth of InN dots without In droplets at 700 oC once interruption time at each cycle exceeds 15 seconds. Total amount of indium atoms at droplet-existing and droplet-free regime are valued at 3.96±0.38 and 4.38±0.69 mol/cm2.Although a~20% of volume of the hollow dots might be overestimating at droplet-free regime, it is probably suggested In convert to InN rather than evaporation. We observed not only the conversion process, long enough interruption times results in a PL peak energy at 0.7eV rather than 0.75eV. Temperature-dependent PL measurement showed the S-shaped behavior below 220K that indicates a strong localization effect. Results of time-resolved photoluminescence reveals the localization energy about 20meV, and we probably believed the 0.7eV emission involves a deep level.
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Tseng, Ya-hsin, and 曾雅欣. "Growth Mechanism of CuZnInSe Thin Films Grown by Molecular Beam Epitaxy." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/10557914507452725729.
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碩士大同大學
光電工程研究所
100
CuZnInSe (CZIS) has potential application in solar cell for absorption layer. This interesting compound constitute by (CuInSe2)1-x-(2ZnSe)x, give an advantage to change the band gap from CuInSe2(1.02 eV) to ZnSe (2.67 eV). Using molecular beam epitaxy (MBE) technology, the CZIS thin films were grown via CuInSe (CIS) and ZnSe base in this thesis. And then the thin films are studied by Raman, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM) etc. to analysis the growth mechanism of CZIS thin films. In the case of CIS, the thin films grown on Mo/glass with the various Zinc (Zn) flux. XRD reveals the CIS (112) and CZIS (112) were coexisted as lowest Zn flux, 300 oC, and then the CIS (112) disappeared as the Zn flux increased above 310 oC. The peak of CZIS (112) have large-shifted angle behavior with creasing Zn content. According to the EDS, the replacement of Zn to Copper (Cu) is stronger than Zn to Indium (In). Furthermore, the Zn/(Zn+In+Cu) ratio has limited to approximate 36 at.% and then the excess-Zn played another role instead of CZIS thin film insertions in the growth condition. The Zn collection has played a catalyst role in the excess-Zn condition. In the case of ZnSe base, the thin films were grown on GaAs (001) with the various In and Cu flux, which defined as the TIn series and TCu series, respectively. The XRD and Raman spectra indicated there are four types of compound in the TIn series and TCu series are ZnSe, InxSey, ZnIn2Se4 (ZIS) and CZIS. As the lowest In and Cu flux in the TIn series, Selenium (Se) were reached to 83.11 at.%, the primary status lead to the Se elements were randomly combined with cations in the crystal structure to form the CZIS. As the TIn increased to 600 oC above, the sphalerite CZIS structure was transformed into the tetragonal ZIS structure. In the TCu series, there have three reactive equations with the Cu flux increasing from 1012 oC to 1100 oC. As the TCu were increased from 1012oC to 1062oC, the CZIS formed via In-rich ZIS (Zn(In, Cu)Se) and InxSey base ((Zn. Cu)InSe), were coexisting. In this region, CZIS were chalcopyrite and sphalerite coexsting. As the TCu increased above 1062 oC, the CZIS were transformed into the Zn-poor and Cu-rich CZIS. Samples have the uniform surface even with the excess-Se or excess-Cu content. Finally, all of the CZIS are study in a tetragonal diagram to discuss the growth mechanisms.
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Cheng, Yu-Chang, and 鄭又彰. "Growth mechanism of graphene grown on Pt by plasma-assisted CVD." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/w8wg7m.
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碩士國立中央大學
能源工程研究所
103
Graphene is a new material for flexible transparent conductive film, it has excellent electrical properties and high transmittance. It will expect to replace the traditional transparent conductive film such as indium tin oxide (ITO), oxidation zinc aluminum (AZO), etc., graphene to be applied on the transparent conductive film there is a great challenge because of graphene growth process needs a catalytic metal and high grow temperature. This plan direct growth a graphene / platinum transparent conductive composite film in optoelectronic in order to solve this problem. production of First grow a thin platinum film (<10 nm) as the catalytic metal thin film and growth of graphene by plasma enhanced low temperature (<350 ℃) chemical vapor deposition. The plan is to analyze and explore graphene is grow at different temperatures on platinum film by the sputtering and atomic layer deposition method. Using Hall measurement to measure electrical properties of graphene; using atomic force microscopy to measure the surface structure of graphene; using Raman and simple X-ray photoelectron spectroscopy to explore the crystallization characteristics of graphene. We obtain the platinum film has transmittance 89% @ 550 nm by atomic layer deposition method. Growing graphene by plasma assisted chemical vapor deposition method at 250 ℃. The resistivity of graphene / platinum transparent conductive composite film was 3.347 × 10-2 ohm-cm and transmittance remained at 89% @ 550 nm.