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Relevant bibliographies by topics / Growth of vegatation area

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Academic literature on the topic 'Growth of vegatation area'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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Journal articles on the topic "Growth of vegatation area"

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Warcholińska, Urszula A. "Flora and segetal vegatation of the Sulejów Nature Park. Part II. Segetal vegetation." Acta Agrobotanica 50, no. 1-2 (2013): 181–202. http://dx.doi.org/10.5586/aa.1997.018.

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This paper presents the result of researches on the segetal vegetation of the Sulejów Nature Park. In the area of research, 10 segetal associations - 5 of the Secalietea class and 5 of the Chenopodietea - have been found. Among them following ones are quite interesting: <em>Caucalido-Scandicetum, Lamio- Veronicetum politae</em> and <em>Bilderdykio-Lamietum amplexicaule</em>.

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TAZAKI, Fuyuki, Keita KAWASHIMA, Masashi KANAYA, Naoki SATO, and Fusayuki KANDA. "Relationship betweem vegatation and relative elevation of groundwater after cutting down a ground in Hororo area, Kushiro Wetland." Journal of the Japanese Society of Revegetation Technology 46, no. 1 (August 31, 2020): 150–53. http://dx.doi.org/10.7211/jjsrt.46.150.

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Olsson, Fredrik, Tiankai Zhu, Gaël Mion, and Sebastian Lourdudoss. "Large mask area effects in selective area growth." Journal of Crystal Growth 289, no. 1 (March 2006): 24–30. http://dx.doi.org/10.1016/j.jcrysgro.2005.10.130.

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JANEROBINSON, C. "Polypeptide growth factors — a growth area for biotechnology." Trends in Biotechnology 8 (1990): 59–60. http://dx.doi.org/10.1016/0167-7799(90)90136-l.

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Winzenried, Arthur. "Information providers: A growth area." Electronic Library 15, no. 6 (June 1997): 469–72. http://dx.doi.org/10.1108/eb045598.

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Şahinalp, Mehmet Sait. "Effects of Natural Geographic Features on the Manufacturing Industry in Sanliurfa, Turkey." Studies of the Industrial Geography Commission of the Polish Geographical Society 33, no. 1 (March 28, 2019): 89–105. http://dx.doi.org/10.24917/20801653.331.7.

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Geographical features of a place have an important effect on distribution, location, aglomeration and a variety of industrial activities. Social and economical features, along with natural geographic features such as geology, geomorphology, climate, natural vegetation, soil properties and hydrographic features also have a significant effect on industry. This study aims at determining how physical geographic features affect categories of industrial activities in Sanliurfa. For this purpose, firstly, physical geographic features of Sanliurfa and statistical data on agricultural and industrial activities in Sanliurfa were obtained. Then, effects of these physical features on other economic activities and the influence of those features on the distribution of industrial plants and industrial activities were analysed in terms of distribution, relation and casuality principles. Geological formations in Sanliurfa province occured in Neogene and also in Quaternary. These formations mostly consist of Neogene limestone, Quaternary basaltic volcanic rocks and alluvial soils. Geomorfically Sanliurfa is a slightly hilly place with plateaus and plains. The main river in Sanliurfa is the Euphrates – the biggest river of Turkey. Naural vegatation of Sanliurfa consists of steppe. These physical geographic fetaures of Sanliurfa cause intensive agricultural activites all across the province. Sanliurfa province covers 18,584 km² and 60% of this area is convenient for agriculture. As a consequence, the majority of manucturing industry in Sanliurfa is agro-based, such as food, textile, mill and apparel industries. While these categories constitute 65.43% of all industrial enterprises, the share of enterprises involving stone, clay, glass, and concrete industry is 11%, and lumber and wood industry share is only 2%.

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Yang, J. J., M. Jansen, M. Sergant, S. S. Ou, and J. Z. Wilcox. "High‐power broad‐area lasers fabricated by selective area growth." Journal of Applied Physics 62, no. 9 (November 1987): 3984–86. http://dx.doi.org/10.1063/1.339199.

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Chen, Xiangping, Lili Zhang, and Shanshan Chen. "Large area CVD growth of graphene." Synthetic Metals 210 (December 2015): 95–108. http://dx.doi.org/10.1016/j.synthmet.2015.07.005.

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Adams, D. P., T. M. Mayer, and B. S. Swartzentruber. "Selective area growth of metal nanostructures." Applied Physics Letters 68, no. 16 (April 15, 1996): 2210–12. http://dx.doi.org/10.1063/1.115861.

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Schwerdt, Guido, and Jarkko Turunen. "GROWTH IN EURO AREA LABOR QUALITY." Review of Income and Wealth 53, no. 4 (December 2007): 716–34. http://dx.doi.org/10.1111/j.1475-4991.2007.00252.x.

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Dissertations / Theses on the topic "Growth of vegatation area"

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寺本, 敦子, Atsuko TERAMOTO, 哲郎辻本, and Tetsuro TSUJIMOTO. "植生域を伴う砂州の地形変化-木津川下流域を例として-." 土木学会, 2005. http://hdl.handle.net/2237/8587.

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Campos, Claúdia Cristina Marinho. "Predicting GDP growth in the Euro Area." Master's thesis, NSBE - UNL, 2013. http://hdl.handle.net/10362/9837.

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A Work Project, presented as part of the requirements for the Award of a Masters Degree in Finance from the NOVA – School of Business and Economics
Predicting GDP growth is a concern of several economic agents. The right way to model such variable is far from consensual. This paper’s goal is to compare different models for GDP growth forecasting in the euro area. For comparative purposes, an autoregressive model (which is used as benchmark) and two Autoregressive Distributed Models (ADL), which contain financial and non-financial variables, chosen based on the literature, are used. The main conclusion is that the ADL(2,1,1) considered has superior forecast performance in- and out-of-sample, although in this last case depending on the evaluation metric.

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Estrella, E. Pablo A. "A conceptualization of pastors in the Yucatan area about church growth." Theological Research Exchange Network (TREN), 1985. http://www.tren.com.

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Kim, Meekyung Ph D. Massachusetts Institute of Technology. "Limited-area growth of Ge and SiGe on Si." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/62743.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2011.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 147-159).
The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low pressure chemical vapor deposition was investigated for two limiting cases of strain states: thin, strained, high Ge content SiGe films for transistor applications, and thick, relaxed Ge films, for potential optoelectronic applications. Selective epitaxial growth of thin, high Ge-content, strained SiGe on oxide-patterned silicon was studied, specifically the effect of growth area on the critical thickness. The critical thickness of Sio.33Geo.67 formed by selective epitaxial growth in areas of 2.3 x 2.3 [mu]m was found to be 8.5 nm, which is an increase of 2x compared to the critical thickness observed for growth in large areas (i.e. for non-selective epitaxy). The sources of misfit dislocation nucleation in selective growth were analyzed, and misfit generation from the SiGe pattern edges, due to effects such as local strain concentration, Si surface shape near the oxide boundary, and preferential SiGe growth near the pattern edge were investigated. Thin, smooth Ge-on-Si films were developed and the effect of growth conditions on film morphology was examined to find an optimum temperature and pressure for smooth film surface (365 °C and 60 torr). A period of delayed epitaxial growth, or "incubation time" was observed, and a Si surface treatment technique, consisting of a short SiGe pulse, with negligible SiGe thickness, was employed to realize uniform Ge films with low surface roughness (RMS<0.3 nm) and reduced incubation time (<20 seconds). For selective growth of relaxed, thick Ge, approximately 1 pm-thick Ge films were grown in exposed Si regions on oxide-patterned wafers, and germanium selectivity, faceting, surface roughness and threading dislocation density were studied as functions of growth and processing conditions. The optimal growth condition for relaxed Ge selective epitaxial growth was found (750 °C and 10 torr, with 100 sccms of GeH4 and 10 slpm H2 flow), and the effect of thermal annealing, Ge film thickness, and growth area on the threading dislocation density was also studied.
by Meekyung Kim.
Ph.D.

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Chen, Xiaoshan. "Business and growth cycle analysis for the Euro area." Thesis, Loughborough University, 2009. https://dspace.lboro.ac.uk/2134/35617.

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This thesis revisits the issue of business cycle synchronisation in the Euro area by utilising time-series models that may overcome some of the drawbacks in the existing literature. Two major contributions are made to the existing literature of evaluating cycle synchronisation. First, instead of identifying turning points from individual macroeconomic timeseries, as carried out in most studies, this thesis obtains turning points from multivariate information. It is hoped that including more variables containing business cycle information in the dating process may produce more accurate turning points and, in turn, improve the accuracy of measuring cycle correlation. In doing so, both parametric and non-parametric business cycle dating procedures are used. These include the quarterly Bry-Boschan (BBQ) algorithm, a single dynamic factor model and the Markov switching dynamic factor model. Second, unlike the traditional approach that measures growth cycle synchronisation in the euro area by calculating pairwise cycle correlations, this thesis analyses the degree of growth cycle co-movement within a multivariate setting by using a VAR model with cointegration.

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Beere, H. E. "Selective area growth of III-V semiconductor compounds using Ga+ FIB deposition during MBE growth." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596523.

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Selective area growth of III-V semiconductor compounds using molecular beam epitaxy (MBE) has been envisaged as an in situ fabrication method for integrated circuits on a nanometer scale. However, conventional selective area growth techniques using MBE are limited to only two dimensional, template-like, pattering of the epilayer. The work presented in this dissertation describes the selective area growth of AlGaAs based structures using a Ga⁺ focused ion beam (FIB) as one of the group III matrix element sources in a MBE growth chamber. Since stoichiometric epitaxy of a III-V semiconductor compound can be achieved with an excess supply of the group V element, supplying the Ga matrix element as a FIB, under standard MBE growth conditions, was shown to facilitate a maskless, in situ, lateral selective area growth technique for GaAs. Consequently, this FIB-MBE growth technique, FIMBE, has the potential of exploiting the precise control over the elemental composition afforded by MBE in the growth (z) direction with the high spatial resolution of FIB technology in the lateral (xy) plane. Moreover, it offers the unique facility of growing fully integrated three-dimensional structures into one as-grown epilayer structure. The necessary modifications required to a standard FIB column and MBE growth chamber to fully exploit the combination of these two technologies, along with the operational performance of the fully integrated FIMBE growth system are presented. A study of the effect of incident ion energy (E_ion) on the film growth rate identified two growth rate limiting processes; (i) the inherent properties of the Ga⁺ FIB (E_ion <25eV) and (ii) material sputtering from the growing GaAs film (E_ion>100eV). However, a systematic reduction in the surface roughness of the FIMBE grown GaAs films was observed with increasing incident ion energy.

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Murdock, Adrian T. "Chemical vapour deposition growth of large-area graphene on metals." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:07fa91ef-0d61-4086-a7d8-a53537dcb54b.

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Graphene has unrivalled properties and is heralded as a revolutionary material for the 21^st century. Chemical vapour deposition (CVD) on metals is a promising method to produce large-area graphene. Controlling the properties of CVD graphene is vital for its integration in a wide-range of future applications. Many factors can influence the CVD growth of graphene and its properties, therefore further investigations will be beneficial to fully understand and control this technique. In this thesis I expand the knowledge about the growth of pure and heteroatom-doped graphene by low pressure chemical vapour deposition (LPCVD) and atmospheric pressure chemical vapour deposition (APCVD) on commercially available Cu and Pt foils. Using a range of characterisation techniques, I investigate the influence of the substrate’s properties and the synthesis conditions on the growth of graphene, in pursuit of improved, controlled or optimised production, which can promote high quality, large-area, single-layer graphene, or other as desired. By characterising the topography, surface roughness, crystallographic orientations, and chemical composition of six Cu foils, I find that their properties vary greatly and this influences the growth of CVD graphene. I elucidate that the commonly used 99.8 % Alfa Aesar Cu foil has a surface coating composed of calcium, chromium, and phosphorus, which detrimentally influences graphene growth. Cleaning Cu foils with CH₃COOH is shown to reduce the concentration of surface contaminants, consequently reducing the nucleation density and increasing the growth rate of CVD graphene. I also demonstrate that the shape, orientation, edge-geometry and thickness of CVD graphene domains can be controlled by the Cu crystallographic orientations. Single layer LPCVD graphene domains align with zigzag edges parallel to a single <101> direction on Cu{111} and Cu{101}, while bilayer domains align to two directions on Cu{001}. Hexagonal APCVD domains also preferentially align with edges parallel to the <101> direction(s). This discovery resolves a key challenge of controlling the orientation of individual graphene domains and opens a new avenue for tailored production of large-area CVD graphene with improved properties. By controlling the synthesis conditions of APCVD graphene on Pt foils I optimise production of ~0.5 mm single layer graphene domains with reduced nucleation density and increased growth rate of ~100 μm/min by synthesis at 1150°C, a higher temperature than previously reported. The absence of large, hexagonal, single-crystal domains on pristine Pt foil, and observation of a reaction between quartz and Pt that promotes hexagonal domains, suggests that a silicon or platinum silicide surface layer may be advantageous for improved growth of graphene. Finally, I demonstrate that the dopant concentration of nitrogen-doped graphene is increased at lower synthesis temperatures and higher NH₃ concentration, up to 1.3 %, but with an associated decrease in the growth rate. Direct visualisation, elemental confirmation, and electronic characterisation of individual nitrogen atoms is shown for the first time using aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy. Boron-doped graphene is also synthesised. The implications of these findings, and many additional minor contributions, are wide-ranging and of considerable importance for the future understanding of CVD growth of graphene on metals, and more generally for the advancement of scientific knowledge for manufacturing large-area graphene. Collectively, these discoveries represent a significant body of work that can improve the efficiency of production and assist with controlling the properties of large-area CVD graphene.

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Tondl, Gabriele. "Interest rates, corporate lending and growth in the Euro Area." WU Vienna University of Economics and Business, 2016. http://epub.wu.ac.at/5085/1/wp227.pdf.

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The sluggish development of corporate lending has remained the central concern of EU monetary policy makers as it is considered to hinder seriously the resurgence of growth. This paper looks at the development of loans to large corporations vs SMEs in the pre-crisis and post-crisis period and wishes to answer: (i) to which extent do allocated loan volumes actually contribute to Output growth? (ii) which factors determine the development of loans, considering above all loan interest rates? and (iii) what causes differences in loan interest levels across the EA? The results indicate that different loan developments in the EA explain very well differences in output development, loans to SMEs contribute even more to output growth than those for large corporations. Loan development itself is negatively influenced by the interest level which differs significantly across EA members, with small loans in addition always being charged an interest premium over large loans. The capitalization of banks, the size of banks and their internationalization play a role as well. A part of the sluggish growth of loans can be explained by the increasing use of alternative financial instruments by large firms. Interest rates in turn are following the ECB interest rate, - but this link has become looser in the post-crisis period, and long term government bond rates. Different risks faced by banks and different bank structures have become important explanatories of interest rates in the post-crisis period. (author's abstract)
Series: Department of Economics Working Paper Series

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Hall, Angus John. "Electronic measurements of area and perimeter in ultrasonic images." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328883.

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Otoo, Emmanuel A. K. "Urban growth and institutional management of Accra Metropolitan Area (AMA), Ghana." Thesis, Lancaster University, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.507298.

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Books on the topic "Growth of vegatation area"

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Mills, Edwin S. The determinants of small area growth. [Corvallis, Or.]: University Graduate Faculty of Economics, Oregon State University, 1987.

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Victoria. Dept. of Planning and Urban Growth. The Werribee growth area plan: Minister's direction. [Melbourne]: The Department, 1990.

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Victoria. Dept. of Planning and Urban Growth. The Werribee growth area plan: A background report. [Melbourne]: The Department, 1990.

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Ireland, Peter N. Stochastic growth in the United States and Euro area. Cambridge, MA: National Bureau of Economic Research, 2011.

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Satyapriya, V. S. Pulses in India: Growth, regional distribution, and area responses. New Delhi: Oxford & IBH Pub. Co., 1989.

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Estevão, Marcello M. Why is productivity growth in the Euro area so sluggish. [Washington D.C]: International Monetary Fund, European Dept., 2004.

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Bolsinger, Charles L. Area of old-growth forests in California, Oregon, and Washington. Portland, Or. (333 S.W. First Ave., Portland 97208-3890): U.S. Dept. of Agriculture, Forest Service, Pacific Northwest Research Station, 1993.

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Rothermel, Richard C. Fire growth maps for the 1988 greater Yellowstone area fires. [Ogden, UT]: U.S. Dept. of Agriculture, Forest Service, Intermountain Research Station, 1994.

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9

Ninan, K. N. Edible oil seeds: Growth, area responses, and prospects in India. New Delhi: Oxford & IBH Pub. Co., 1989.

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Bolsinger, Charles L. Area of old-growth forests in California, Oregon, and Washington. Portland, Or. (333 S.W. First Ave., Portland 97208-3890): U.S. Dept. of Agriculture, Forest Service, Pacific Northwest Research Station, 1993.

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Book chapters on the topic "Growth of vegatation area"

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Kishino, Katsumi. "Mechanism of Selective Area Growth by MBE." In Molecular Beam Epitaxy, 91–106. Chichester, UK: John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch6.

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Brantley, S. L., A. F. White, and M. E. Hodson. "Surface Area of Primary Silicate Minerals." In Growth, Dissolution and Pattern Formation in Geosystems, 291–326. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-015-9179-9_14.

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Roberts, J. C., K. S. Boutros, and S. M. Bedair. "Photoassisted Selective Area Growth of III–V Compounds." In Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, 219–27. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0341-1_20.

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Chevet, Jean-Michel, and Gérard Béaur. "1. Introduction. Agricultural growth: a new look." In Comparative Rural History of the North Sea Area, 1–24. Turnhout: Brepols Publishers, 2014. http://dx.doi.org/10.1484/m.corn-eb.4.00067.

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Aquino, Antonio. "Competitive Imbalances as the Fundamental Cause of the Euro Area Crisis." In Sustainable Growth in the EU, 149–72. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-52018-6_9.

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Zingg, Andreas. "Diameter and Basal Area Increment in Permanent Growth and Yield Plots in Switzerland." In Growth Trends in European Forests, 239–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-61178-0_18.

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Duma, Jean. "4. Land and growth in the eighteenth century: the métairies of Garaison and their accounts, or the uncertainties of growth." In Comparative Rural History of the North Sea Area, 67–86. Turnhout: Brepols Publishers, 2014. http://dx.doi.org/10.1484/m.corn-eb.4.00070.

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Miyazawa, Hitoshi. "Distribution of Vacant Homes in Tama City in the Tokyo Metropolitan Area: Estimation Using GIS and Small Area Statistics." In The Rise in Vacant Housing in Post-growth Japan, 87–109. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-7920-8_6.

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Alisjahbana, A., and A. Usman. "Determinants of fetal growth and early postnatal growth in a rural area of Indonesia." In Child Health in the Tropics, 247–60. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5012-2_24.

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Pujol-Andreu, Josep. "3. Environment conditions and biological innovations in European agrarian growth." In Comparative Rural History of the North Sea Area, 42–67. Turnhout: Brepols Publishers, 2005. http://dx.doi.org/10.1484/m.corn-eb.4.00159.

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Conference papers on the topic "Growth of vegatation area"

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Kuznetsova, N., P. Colman, E. Semenova, S. Kadkhodazadeh, N. V. Kryzhanovskaya, S. Ek, W. Xue, Martin Schubert, A. E. Zhukov, and K. Yvind. "Nonplanar nanoselective area growth of InGaAs/InP." In SPIE OPTO, edited by Diana L. Huffaker, Frank Szmulowicz, and Holger Eisele. SPIE, 2014. http://dx.doi.org/10.1117/12.2037902.

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He, Yunrui, Jun Wang, Can Deng, Haiyang Hu, Qi Wang, Yongqing Huang, and Xiaomin Ren. "Selective area growth of GaAs on silicon." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/acpc.2014.ath2a.1.

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Vasiliauskas, Remigijus, Rickard Liljedahl, Mikael Syväjärvi, Rositza Yakimova, Gabriel Ferro, and Paul Siffert. "Towards Large Area Growth of 3C-SiC." In 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗. AIP, 2010. http://dx.doi.org/10.1063/1.3518306.

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LEÓN, WILLIAM H. HERRERA, JESÚS PACHECO MARTÍNEZ, MARTÍN HERNÁNDEZ MARÍN, RAUDEL PADILLA CENICEROS, and MARÍA DE LA LUZ PÉREZ REA. "LAND SUBSIDENCE AND ITS EFFECTS ON THE URBAN AREA OF TEPIC CITY, MEXICO." In URBAN GROWTH 2018. Southampton UK: WIT Press, 2018. http://dx.doi.org/10.2495/ug180341.

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Fauthan, Aishah, Mohd Nizar Hamidon, Burhanuddin Yeop Majlis, and Z. Yunuza. "Lithography method for selective area of CNTs growth." In 9th IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2013). IEEE, 2013. http://dx.doi.org/10.1109/rsm.2013.6706552.

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Liu, Guoli, Wei Wang, Jingyuan Zhang, Weixi Chen, Guoyang Xu, Baijun Zhang, Fan Zhou, Xiaojie Wang, and Hongliang Zhu. "Tunable MQW-DBR lasers using selective area growth." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408416.

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Debrégeas, H., J. Decobert, N. Lagay, R. Guillamet, D. Carrara, O. Patard, Ch Kazmierski, and R. Brenot. "Selective-area-growth technology for flexible active building blocks." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/iprsn.2012.im2a.3.

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BĂNEȘ, Adrian, Păun Ion OTIMAN, Tiberiu IANCU, and Manuela Dora ORBOI. "GROWTH SCENARIOS OF ORGANIC AREA IN ROMANIA UNTIL 2025." In Rural Development 2015. Aleksandras Stulginskis University, 2015. http://dx.doi.org/10.15544/rd.2015.091.

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Organic farming uses management practices that would avoid the use of chemical inputs and minimizes damage to the environment and wildlife. Thus we are brought significant restrictions on synthetic chemicals used in obtaining food products. The method involves different practices aimed at protecting the environment, maintaining and enhancing soil fertility, obtaining unpolluted and high quality agricultural products, and at last, promoting sustainable agricultural development. Romania has a great opportunity for organic farming as a result of natural conditions. However, Romania is located behind other EU or world countries. The present study shows the empirically based growth rate, of organic agriculture needed by Romania to reach in year 2025 the level of other countries. For comparison and calculations were considered France (one of the major players in the market of organic products) and Lithuania (that also has a well-developed organic agriculture). The results show that the current growth is not enough to overcome the first half of the top EU countries and requires an acceleration of this process of transformation into organic.

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Ru, Guoyun, X. Yu, Z. B. Chen, and Fow-Sen Choa. "Study of strain effect in MOCVD selective area growth." In Applications of Photonic Technology, edited by Roger A. Lessard and George A. Lampropoulos. SPIE, 2003. http://dx.doi.org/10.1117/12.544028.

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Zhang, Jun P., Xiangjun Zhao, Xiaojun Wang, Fow-Sen Choa, Jie Lin, and Gary M. Carter. "Selective area growth materials for widely tunable semiconductor lasers." In 2000 International Conference on Application of Photonic Technology (ICAPT 2000), edited by Roger A. Lessard and George A. Lampropoulos. SPIE, 2000. http://dx.doi.org/10.1117/12.406317.

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Reports on the topic "Growth of vegatation area"

1

Wang, Wen I. Large Area Heteroepitaxial Growth Using Compliant Substrates. Fort Belvoir, VA: Defense Technical Information Center, July 2002. http://dx.doi.org/10.21236/ada403964.

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2

Ireland, Peter. Stochastic Growth in the United States and Euro Area. Cambridge, MA: National Bureau of Economic Research, January 2011. http://dx.doi.org/10.3386/w16681.

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3

Rothermel, Richard C., Roberta A. Hartford, and Carolyn H. Chase. Fire growth maps for the 1988 Greater Yellowstone Area Fires. Ogden, UT: U.S. Department of Agriculture, Forest Service, Intermountain Research Station, 1994. http://dx.doi.org/10.2737/int-gtr-304.

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4

Bolsinger, Charles L., and Karen L. Waddell. Area of old-growth forests in California, Oregon, and Washington. Portland, OR: U.S. Department of Agriculture, Forest Service, Pacific Northwest Research Station, 1993. http://dx.doi.org/10.2737/pnw-rb-197.

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5

Gadbury, G. L., H. K. lyer, H. T. Schreuder, and C. Y. Ueng. A nonparametric analysis of plot basal area growth using tree based models. Ft. Collins, CO: U.S. Department of Agriculture, Forest Service, Rocky Mountain Research Station, 1997. http://dx.doi.org/10.2737/rmrs-rp-2.

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Dolph, Leroy K. Prediction of periodic basal area increment for young-growth mixed conifers in sierra Nevada. Berkeley, CA: U.S. Department of Agriculture, Forest Service, Pacific Southwest Forest and Range Experiment Station, 1988. http://dx.doi.org/10.2737/psw-rp-190.

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7

Leferink, Robin. Riparian Shade Assessment and Restoration Priorities Analysis in the Damascus Urban Growth Boundary Expansion Area. Portland State University, June 2007. http://dx.doi.org/10.15760/mem.31.

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Zarnoch, S. J., D. A. Gansner, D. S. Powell, T. A. Birch, and T. A. Birch. Stand basal-area and tree-diameter growth in red spruce-fir forests in Maine, 1960-80. St. Paul, MN: U.S. Department of Agriculture, Forest Service, North Central Research Station, 1990. http://dx.doi.org/10.2737/ne-rp-633.

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9

Eaton, D., and C. E. Murphy. Toxicity test of the F-Area seep soils by laboratory lettuce seed germination and seedling growth. Office of Scientific and Technical Information (OSTI), September 1993. http://dx.doi.org/10.2172/10128249.

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10

Farrar, Robert M. Volume and Growth Predictions for Thinned Even-Aged Natural Longleaf Pine Stands in the East Gulf Area. New Orleans, LA: U.S. Department of Agriculture, Forest Service, Southern Forest Experiment Station, 1985. http://dx.doi.org/10.2737/so-rp-220.

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