Dissertations / Theses on the topic 'Growth of vegatation area'
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寺本, 敦子, Atsuko TERAMOTO, 哲郎 辻本, and Tetsuro TSUJIMOTO. "植生域を伴う砂州の地形変化-木津川下流域を例として-." 土木学会, 2005. http://hdl.handle.net/2237/8587.
Full textCampos, Claúdia Cristina Marinho. "Predicting GDP growth in the Euro Area." Master's thesis, NSBE - UNL, 2013. http://hdl.handle.net/10362/9837.
Full textPredicting GDP growth is a concern of several economic agents. The right way to model such variable is far from consensual. This paper’s goal is to compare different models for GDP growth forecasting in the euro area. For comparative purposes, an autoregressive model (which is used as benchmark) and two Autoregressive Distributed Models (ADL), which contain financial and non-financial variables, chosen based on the literature, are used. The main conclusion is that the ADL(2,1,1) considered has superior forecast performance in- and out-of-sample, although in this last case depending on the evaluation metric.
Estrella, E. Pablo A. "A conceptualization of pastors in the Yucatan area about church growth." Theological Research Exchange Network (TREN), 1985. http://www.tren.com.
Full textKim, Meekyung Ph D. Massachusetts Institute of Technology. "Limited-area growth of Ge and SiGe on Si." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/62743.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (p. 147-159).
The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low pressure chemical vapor deposition was investigated for two limiting cases of strain states: thin, strained, high Ge content SiGe films for transistor applications, and thick, relaxed Ge films, for potential optoelectronic applications. Selective epitaxial growth of thin, high Ge-content, strained SiGe on oxide-patterned silicon was studied, specifically the effect of growth area on the critical thickness. The critical thickness of Sio.33Geo.67 formed by selective epitaxial growth in areas of 2.3 x 2.3 [mu]m was found to be 8.5 nm, which is an increase of 2x compared to the critical thickness observed for growth in large areas (i.e. for non-selective epitaxy). The sources of misfit dislocation nucleation in selective growth were analyzed, and misfit generation from the SiGe pattern edges, due to effects such as local strain concentration, Si surface shape near the oxide boundary, and preferential SiGe growth near the pattern edge were investigated. Thin, smooth Ge-on-Si films were developed and the effect of growth conditions on film morphology was examined to find an optimum temperature and pressure for smooth film surface (365 °C and 60 torr). A period of delayed epitaxial growth, or "incubation time" was observed, and a Si surface treatment technique, consisting of a short SiGe pulse, with negligible SiGe thickness, was employed to realize uniform Ge films with low surface roughness (RMS<0.3 nm) and reduced incubation time (<20 seconds). For selective growth of relaxed, thick Ge, approximately 1 pm-thick Ge films were grown in exposed Si regions on oxide-patterned wafers, and germanium selectivity, faceting, surface roughness and threading dislocation density were studied as functions of growth and processing conditions. The optimal growth condition for relaxed Ge selective epitaxial growth was found (750 °C and 10 torr, with 100 sccms of GeH4 and 10 slpm H2 flow), and the effect of thermal annealing, Ge film thickness, and growth area on the threading dislocation density was also studied.
by Meekyung Kim.
Ph.D.
Chen, Xiaoshan. "Business and growth cycle analysis for the Euro area." Thesis, Loughborough University, 2009. https://dspace.lboro.ac.uk/2134/35617.
Full textBeere, H. E. "Selective area growth of III-V semiconductor compounds using Ga+ FIB deposition during MBE growth." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596523.
Full textMurdock, Adrian T. "Chemical vapour deposition growth of large-area graphene on metals." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:07fa91ef-0d61-4086-a7d8-a53537dcb54b.
Full textTondl, Gabriele. "Interest rates, corporate lending and growth in the Euro Area." WU Vienna University of Economics and Business, 2016. http://epub.wu.ac.at/5085/1/wp227.pdf.
Full textSeries: Department of Economics Working Paper Series
Hall, Angus John. "Electronic measurements of area and perimeter in ultrasonic images." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328883.
Full textOtoo, Emmanuel A. K. "Urban growth and institutional management of Accra Metropolitan Area (AMA), Ghana." Thesis, Lancaster University, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.507298.
Full textFaber, M. "Community-based growth monitoring in a rural area lacking health facilities." Thesis, Stellenbosch : Stellenbosch University, 2002. http://hdl.handle.net/10019.1/52737.
Full textENGLISH ABSTRACT: A community-based growth monitoring (GM) project was established in a rural village in KwaZulu-Natal. The project is an example of community-based activities that were based on a participatory approach of problem assessment and analysis. The first phase of the study comprised of a situation assessment. The aim was to evaluate the nutritional status and related factors of children aged 5 years and younger. It included a cross-sectional survey (questionnaire and anthropometric measurements), focus group discussions and interviews with key informants. From a nutritional point of view, the situation assessment identified a need for regular GM of infants and small children, increased availability of foods rich in micronutrients, and nutrition education. Relevant findings of the situation assessment were used during a project planning workshop that was attended by community representatives. The community's concern about the health of the preschool children and the lack of health facilities, and the need for regular weighing of their children prompted the establishment of a community-based GM project. The GM project was run by nutrition monitors, through home-based centres (named Isizinda). Monthly activities at the Isizinda included GM, nutrition education, and recording of morbidity and mortality data. Children who were either in need of medical attention or showed growth faltering were referred to the nearest clinic. During the latter half of the study, the GM project was integrated with a household food production project and the Isizinda served as promotion and training centres for agricultural activities. Project activities were continuously monitored by reviewing the attendance register, scrutinising the Isizinda files, observation and staff meetings. Community meetings (at least twice a year) allowed for two-way feedback and addressing questions and concerns. Acceptability of the GM activities was measured in terms of attendance and maternal perceptions. The coverage of the Isizinda project was estimated at approximately 90% and at least 60% of these children were adequately covered. The Isizinda data showed an equal distribution of child contacts over the various age categories and was representative of the community. The attendance data suggest that community-based GM is a viable option to be used for screening and nutrition surveillance, and as platform for nutrition education. Most mothers comprehended the growth curve. Positive behavioural changes have been observed in the community and the Isizinda data showed a steady decline in the prevalence of diarrhoea. The Ndunakazi mothers were appreciative towards the Isizinda project because of a better understanding of the benefits of regular GM. They expressed a sense of empowerment regarding the knowledge that they have gained. The community had a strong desire for the project to continue. The Isizinda project showed that community-based GM can provide the infrastructure for developing capacity for agricultural activities within the community. Data from the household food production project showed that maternal knowledge regarding nutritional issues can be improved through nutrition education given at the GM sessions and that, when GM is integrated with agricultural activities, a significant improvement in child malnutrition can be obtained. The Isizinda project falls within the framework of the Integrated Nutrition Programme, and can bridge the gap in areas which lack health facilities.
AFRIKAANSE OPSOMMING: ’n Gemeenskaps-gebaseerde groeimoniteringsprojek is tot stand gebring in ’n landelike gebied in KwaZulu-Natal. Die projek is 'n voorbeeld van gemeenskapsgebaseerde aktiwiteite wat gebaseer was op 'n deelnemende benadering van probleem bepaling en analise. Die eerste fase van die studie was a situasie analise. Die doel was om die voedingstatus en verwante faktore van kinders 5 jaar en jonger te bepaal. Dit het 'n dwarssnit opname (vraelys en antropometriese metinge), fokus groep besprekings en onderhoude met kern persone ingesluit. Uit 'n voedingsoogpunt het die situasie analise 'n behoefte vir gereelde groeimonitoring van babas en klein kinders, verhoogde beskikbaarheid van voedsels ryk in mikronutriente and voedingsvoorligting aangedui. Toepaslike bevindinge van die situasie analise was gebruik tydens ’n beplannings werkswinkel wat deur verteenwoordigers van die gemeenskap bygewoon is. Die gemeenskap se besorgdheid oor die gesondheid van voorskoolse kinders en die gebrek aan gesondheidsfasilitieite, asook hul behoefte om hul kinders gereeld te laat weeg, het aanleiding gegee tot die totstandkoming van ’n gemeenskaps-gebaseerde groeimoniteringsprojek. Die program is gedryf deur monitors deur tuisgebaseerde sentrums (genoem Isizinda). Maandelikse aktiwiteite by die Isizinda het groeimonitering, voedingvoorligting en die insameling van morbiditeit en mortaliteit inligting ingesluit. Kinders wie mediese sorg benodig het of wie groeivertraging getoon het, is na die naaste kliniek verwys. Die groeimoniteringsprojek is tydens die laaste helfte van die studie met ’n huishoudelike voedselproduksieprojek geintegreer en die Isizinda het as promosie- en opleidingsentrum vir die landbou aktiwitiete gedien. Projek aktiwiteite is deurgaans gemonitor deur die bywoningsregister en Isizinda leêrs deur te gaan, waarnemings en personeel vergaderings. Vergaderings met die gemeenskap (ten minste twee per jaar) het voorsiening gemaak vir wedersydse terugvoering en die aanspreek van vrae en besorgdhede. Die aanvaarbaarheid van die groeimoniterings aktiwiteite is gemeet in terme van bywoning en persepsies. Die Isizinda projek het ongeveer 90% van die kinders gedek, van wie ten minste 60% voldoende gemoniteer is. Die Isizinda data het ’n eweredige verspreiding van besoeke oor die verskillende oudersdomgroepe aangetoon. Die Isizinda data was ook verteenwoordigend van die gemeenskap. Die bywoningssyfers dui aan dat gemeenskapsgebaseerde groeimonitoring 'n lewensvatbare opsie is vir sifting en voeding opnames, en as 'n platform vir voedingvoorligting. Meeste moeders kon die groeikaart interpreteer. Positiewe gedragsveranderinge is in die gemeenskap waargeneem en die Isizinda data het ’n geleidelike afname in die voorkoms van diarree getoon. Die Ndunakazi moeders was waarderend teenoor die Isizinda projek as gevolg van 'n beter begrip ten opsigte van die voordele van gereelde groeimonitering. Hulle het 'n gevoel van bemagteging uitgespreek ten opsigte van hul verbeterde kennis. Hulle was mening dat die projek moes voortgaan. Die Isizinda projek het aangetoon dat gemeenskapsgebaseerde groeimonitoring die infrstruktuur kan skep vir die ontwikkeling vir kapasiteit vir landbou aktiwiteite binne die gemeenskap. Inligting van die huishoudelike voedselproduksieprojek het aangetoon dat die moeders se kennis ten opsigte van voedings verwante aspekte verbeter kan word deur voedingvoorligting wat gegee word tydens die groeimonitering sessie en dat, as groeimonitoring geintegreer is met landbou aktwiteite, 'n verbetering in die voedingstatus van die kind verkry kan word. Die Isizinda projek val binne die raamwerk van die Geintegreerde Voedingsprogram en kan die gaping dek in areas waar geen gesondheidsfasilteite is nie.
Chen, Hsin-Yu. "Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells." Thesis, Linköpings universitet, Halvledarmaterial, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-149811.
Full textMeres, Sereke-Berhan. "Ethiopian and Eritrean Businesses Growth Barriers in the Washington, DC Area." ScholarWorks, 2016. https://scholarworks.waldenu.edu/dissertations/2613.
Full textNgaruye, Innocent. "Contributions to Small Area Estimation : Using Random Effects Growth Curve Model." Doctoral thesis, Linköpings universitet, Matematisk statistik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-137206.
Full textGruschka, Armin Valentin. "The relationship between inequality and economic growth in the euro area." Master's thesis, Instituto Superior de Economia e Gestão, 2017. http://hdl.handle.net/10400.5/14819.
Full textNas últimas décadas surgiu um crescente interesse na literatura econômica em relação à pergunta de como a desigualdade está relacionada com o crescimento econômico. Nenhum consenso foi conseguido ainda. Uma resposta confiável pode ajudar os decisores políticos a conceber políticas de distribuição que melhorem o crescimento econômico. Este artigo analisa a relação entre a desigualdade e o crescimento para os países da zona euro, através do cálculo do coeficiente de Gini acumulado no crescimento do PIB per capita. Além disso, o ajuste dos canais do mecanismo de transmissão é analisado em termos de correlação e causalidade. Este artigo faz uso dos estimadores OLS, FE e System GMM, ao usar os testes de causalidade de Granger para verificar a direção causal das variáveis de interesse. Foi encontrada evidência para uma relação insignificante, mas ligeiramente positiva entre a desigualdade e o crescimento econômico na zona euro. Os países com mais desigualdade experimentaram em média um crescimento menor, mas mais prolongado no tempo. Além disso, apenas três das 11 hipóteses relativas ao mecanismo de transmissão foram confirmados pelos dados em analise.
In past decades rising interest in economic literature has emerged concerning the question of how inequality is related to economic growth. No consensus has been reached yet. A reliable answer might help policy makers to design distributional policies that improve economic growth. This paper analyses the relationship between inequality and growth for euro area countries by regressing the Gini coefficient on accumulated GDP per capita growth and growth spells. Moreover, the fit of channels from the transmission mechanism to data is analysed in terms of correlation and causality. This paper makes use of OLS , FE and System GMM estimators, while using Granger causality tests to check for the causal direction of the variables of interest. An insignificant but slightly positive relationship between inequality and economic growth in the euro area was found. Countries with more inequality experienced on average fewer but longer growth spells. Further, only three out of 11 hypotheses regarding the transmission mechanism were confirmed by the data at hand.
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Neumann, John A. P. "Variability in the relationship between leaf area and selected stem measures in Douglas fir." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/28819.
Full textForestry, Faculty of
Graduate
KAWABATA, RUDY MASSAMI SAKAMOTO. "GROWTH OF QUANTUM DOTS BY STRANSKI-KRASTANOV MODE AND BY SELECTIVE AREA GROWTH IN NANOWIRE FOR OPTOELECTRONIC DEVICES." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2015. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=25898@1.
Full textCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO
As premências da sociedade contemporânea têm dependido gradativamente mais do uso de dispositivos optoeletrônicos como solução para o aperfeiçoamento de inúmeras aplicações diárias. Notadamente na última década, áreas como a de geração de energia elétrica com células solares inorgânicas ou a de computação com o advento de computadores quânticos baseados em fótons únicos têm acumulado muitos investimentos em pesquisa. Este trabalho visa estudar e definir os parâmetros necessários para a produção de pontos quânticos (QD, do inglês Quantum Dot) de semicondutores III-V com o objetivo de aplicá-los como material ativo para células solares de banda intermediária (IBSC, do inglês Intermediate Band Solar Cell) e para emissores de fótons únicos quando inseridos em nanofios (QD-in-NW, do inglês QD in Nanowire). Para a aplicação em IBSC, os pontos quânticos são produzidos auto organizadamente pelo modo Stranski-Krastanow. A estrutura de banda do IBSC requer um poço de potencial fundo o suficiente para gerar 3 absorções em paralelo de fótons com energias distintas (um proveniente da energia de gap do material da barreira, um da absorção banda-banda do poço de potencial e o terceiro da absorção intra-banda do poço na banda de condução). Os materiais escolhidos foram barreiras de AlxGa1-xAs e poço de InAs crescidos sobre um substrato de GaAs(100). Os resultados do crescimento dessa estrutura foram analisados por microscopia de força atômica (AFM, do inglês atomic force microscopy), microscopia eletrônica de varredura (MEV), microscopia eletrônica de transmissão (MET) e fotoluminescência (PL, do inglês photoluminescence). Para a aplicação em emissores de fótons únicos, os QDs (de InxGa1-xAs) são crescidos axialmente sobre nanofios de GaAs em substrato de GaAs(111)B. A técnica de crescimento escolhida neste caso foi o crescimento seletivo (SAG, do inglês selective area growth) que traz muitas vantagens com relação à qualidade cristalina e futuras litografias para fabricação do dispositivo. Tal técnica consiste na aplicação de uma máscara sobre o substrato com buracos nanométricos dentro dos quais a epitaxia ocorre exclusivamente. Os resultados de crescimento da estrutura foram analisados por MEV, MET, PL e espectroscopia de raios X por dispersão em energia (EDX, do inglês Energy-dispersive X-ray Spectroscopy). Em ambos os casos, o crescimento das estruturas finais foi otimizado. Foi possível obter correlações da influência de cada parâmetro de crescimento na morfologia, cristalinidade e composição das estruturas. No caso dos QDs para IBSC, o método usado de recobrimento por In-flush foi determinante para a melhoria da qualidade cristalina das camadas e da homogeneização da altura dos QDs. No caso da estrutura de QD-in-NW, primeiro precisou-se encontrar os parâmetros de crescimento dos nanofios para atingir uma razão de aspecto alta, e só posteriormente estudou-se as condições para que o InAs crescesse axialmente sobre o nanofio. As caracterizações, principalmente a ótica, de ambos os trabalhos indicam que as estruturas propostas foram produzidas.
In contemporary society the dependence on optoelectronic devices for countless daily applications has increased gradually. Particularly in the last decade fields such as energy generation through inorganic solar cells or quantum computation based in exchange of single photons has been heavily funded for their development. The aim of this thesis is defining the production parameters needed to fabricate quantum dots (QD) based on III-V semiconductors with planar geometry for intermediate band solar cell (IBSC) and with nanowire geometry (quantum dot in nanowire, QD-in-NW) for single photon emitter applications. For IBSC, the QDs are generated via self-assembly by Stranski-Krastanow mode. The IBSC s band structure requires a potential well deep enough to have 3 parallel photon absorption in different energy ranges (one is the barrier s energy gap, another is from the valence band to the intermediate band and the third one is from the intermediate band to the top of the barrier). The selected materials were AlxGa1-xAs as barriers, InAs as well, all grown on GaAs(100) substrate. The growth results were analysed by atomic force microscopy (AFM), scanning eléctron microscopy (SEM), transmission eléctron microscopy (TEM) and photoluminescence (PL). For the single photon emitters, the QDs (InxGa1-xAs) are grown axially over GaAs nanowires on a GaAs(111)B substrate. The chosen growth technique was the selective area growth (SAG) that brings many advantages in crystal quality and device lithography. This technique consists of applying a mask over the substrate with nanometric holes inside which the epitaxy occurs. The results were analysed by SEM, TEM, PL and energy dispersive X-ray spectroscopy (EDX). In both cases, the growth of the structures were optimized for better quality. The growth parameters could be correlated with the structure’s morfology, cristalinity and composition. For the IBSC, a capping method named In-flush was used to increase the crystal quality from the layers and the homogeneity from the QD s heights. For the QD-in-NW, firstly the nanowire s growth was optimized for higher aspect ratio and only then the growth of the InAs QD was optimized for axial growth over the nanowire. In both cases the optical measurements show that the proposed structures were grown successfully.
Tanaka, Shigeyasu, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Michio Hibino, and Kazumasa Hiramatsu. "Defect structure in selective area growth GaN pyramid on (111)Si substrate." American Institute of Physics, 2000. http://hdl.handle.net/2237/6983.
Full textWitt, S. J. G. "District councillors and housebuilder pressure in an area of growth, central Berkshire." Thesis, University of Reading, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376326.
Full textNIEBLES, FRANCISCO JUAN RACEDO. "SELECTIVE AREA EPITAXIAL GROWTH OF III-V SEMICONDUCTOR STRUCTURES FOR OPTOELECTRONIC APPLICATIONS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2000. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=7569@1.
Full textA integração monolítica de um modulador com um guia de onda é de muito interesse para aplicação em comunicações ópticas pelo fato de que podemos diminuir as perdas por acoplamento óptico entre os dois dispositivos e usar moduladores curtos que operem em altas taxas de transmissão de dados. O crescimento epitaxial seletivo é uma das técnicas mais promissoras na atualidade para aplicação na integração monolítica de dispositivos semicondutores. Esta técnica permite controlar a espessura e a tensão das camadas crescidas seletivamente permitindo otimizar a integração e as características das estruturas dos dispositivos. A tese trata da implementação, do estudo e da aplicação do crescimento epitaxial seletivo por MOCVD de estruturas casadas e tensionadas de poços quânticos múltiplos de InGaAs/InAlAs para a fabricação de moduladores de amplitude baseados no efeito Stark e sua integração com guias de onda. O desempenho dos moduladores, baseados em estruturas de poços quânticos múltiplos de InGaAs/InAlAs que operam em 1,55 ym, é notavelmente melhorado quando é introduzida uma composição de 52% de Ga na liga e se tem um poço de ~100 A de espessura. Nesse caso, os moduladores possuem uma elevada figura de mérito e podem ser insensíveis à polarização. Nesse estudo foram crescidas várias amostras onde foi analisado o aumento na taxa de crescimento e a variação na composição das ligas de InGaAs e InAlAs em material bulk e em poços quânticos de InGaAs/InAlAs em função da geometria da máscara utilizada, i.e. diferentes larguras do dielétrico e largura da janela onde ocorre o crescimento fixo. Finalmente foram processados guias de onda cujas estruturas foram crescidas com a técnica de crescimento seletivo. Esses guias foram caracterizados por técnicas de campo próximo.
The monolithic integration of a modulator with a waveguide is a lot of interest for application in optical communications for the fact in that can decrease the losses for optical joining between the two devices and to use short modulators that operate in high rates of transmission data. The selective growth is at the present time, one the more promising technique for application in the monolithic integration of semiconductors device. This technique allows to control the thickness and the stress of the grown layers allowing to improve the integration and the characteristics of the devices structures. These thesis is about the implementation, study and application of the selectuve growth by MOCVD of both match and tensile structures of multi quantum wells of inGaAs/InAlAs for the production of the amplitude modulators based on the Stark effect and its integration with waveguide. The performance of the modulators based on structures of multi quantum wells of InGaAs/InAlAs operating in 1,55 um, is notably improved whena Ga composition of 52% is used and the thickness of a quantum well is near to ~100 A. In that case, the modulators have a high figured of merit and they can be insensitive to the polarization. In this study, several samples was grown and the growing rate increase was analyzed and the variation of the composition in InGaAs and InAlAs in bulk alloys and in quantum wells of InGaAs/InAlAs in function of the window where the growth is spent. Finally, waveguides were processed whose structures were grown with the technique of selective growth. Those guides were characterized by the near field technique.
Radtke, Philip J. "Basal Area Growth and Crown Dynamics in a Loblolly Pine Spacing Trial." Thesis, Virginia Tech, 1996. http://hdl.handle.net/10919/36950.
Full textMaster of Science
Torre, Ricardo Reis da. "Government debt and economic growth in the Euro Area : an empirical investigation." Master's thesis, Instituto Superior de Economia e Gestão, 2018. http://hdl.handle.net/10400.5/16408.
Full textEsta dissertação analisa a relação quadrática entre o rácio da dívida sobre o PIB e o crescimento económico, com o objectivo de encontrar um limite a partir do qual um aumento da dívida prejudique o crescimento. Ao observar 12 países europeus entre 1993 e 2017, encontrou-se evidência empírica que sugere a existência de tais limites quando o rácio toma valores próximos de 110%. Este número é maior do que aquele encontrado em trabalhos de investigação anteriores. Também foi analisado o efeito de crescimento do rácio da dívida sobre o PIB, que pode ser mais forte do que o efeito do rácio em si.
This dissertation studies the quadratic relationship between the debt-to-GDP ratio and GDP growth rate, and attempts to find threshold levels past which an increase in debt harms growth. Observing 12 European countries from 1993 to 2017, evidence was found supporting the existence of thresholds around the 110% debt-to-GDP ratio. These thresholds are considerably higher than those found in previous research. The growth rate of the debt-to-GDP ratio was also analyzed and found to have an impact on GDP growth which might be stronger than that of the ratio itself.
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Kalanda, Boniface Francis. "Fetal and infant growth and nutrition in a malarious area of southern Malawi." Thesis, University of Liverpool, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404807.
Full textHata, David Noboru. "Gill surface area in relation to growth rates and maximum size in sharks." W&M ScholarWorks, 1993. https://scholarworks.wm.edu/etd/1539616689.
Full textFahed, Maria. "Selective area growth of in-plane III-V nanostructures using molecular beam epitaxy." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10114/document.
Full textThe use of nanostructures such as quantum dots and nanowires is a very promising way of integration of III-V semiconductors on silicon, since it allows answering most of the associated material challenges. Together with the continuous trend in device scaling, it should lead to the development of new highly efficient opto- and microelectronic circuits. This appeals for a full mastering of the growth and processing of 3D architectures at the nanometer scale. Consequently, the present work aims at investigating the selective area growth (SAG) of III-V semiconductors by molecular beam epitaxy (MBE) in nanoscale patterns. Homoepitaxial SAG of InAs and InP are first reported in order to show that the growth conditions, the opening width and the stripe directions allow tailoring the nanocrystal shape. We then achieve the SAG of in-plane GaSb nanotemplates on a highly mismatched GaAs (001) substrate at low temperature by atomic hydrogen assisted MBE. We highlight the impact of the nano-stripe orientation as well as the role of the Sb/Ga flux ratio on the strain relaxation of GaSb. Finally, from this study, we demonstrate how these GaSb nanotemplates can be used for subsequent growth of in-plane InAs nanowires
McKee, Kristin. "Political Feasibility of Implementing Smart Growth Development Strategies in the Monterey Bay Area." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/813.
Full textNicholas, N. S. "Stand structure, growth, and mortality in southern Appalachian spruce-fir." Diss., Virginia Tech, 1992. http://hdl.handle.net/10919/38365.
Full textMadakadze, Ignacio Casper. "Physiology, productivity and utilisation of warm season (C4) grasses in a short growing season area." Thesis, McGill University, 1997. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=34661.
Full textSiefert, Janet R. "Design of a fulfillment pack area for a pet supply company experiencing steady growth." Menomonie, WI : University of Wisconsin--Stout, 2006. http://www.uwstout.edu/lib/thesis/2006/2006siefertj.pdf.
Full textKowalczuk, Katarzyna. "Population growth in a high amenity area : migration and socio-economic change in Cornwall." Thesis, University of Plymouth, 2011. http://hdl.handle.net/10026.1/323.
Full textHirooka, Yoshihiro. "Evaluation of Rice Growth Characteristics Based on Non-destructive Measurements of Leaf Area Index." Kyoto University, 2016. http://hdl.handle.net/2433/215581.
Full text0048
新制・課程博士
博士(農学)
甲第19755号
農博第2151号
新制||農||1038(附属図書館)
学位論文||H28||N4971(農学部図書室)
32791
京都大学大学院農学研究科農学専攻
(主査)教授 白岩 立彦, 教授 奥本 裕, 教授 稲村 達也
学位規則第4条第1項該当
Nakamura, Taichi. "Office employment growth analysis in the Boston metropolitan area, focusing on differences among industries." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/69384.
Full textMakan, Sanjeev 1973. "Growth and characterization of mismatched indium gallium phosphide films for reduced area dislocation filtering." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10229.
Full textSharma, Mahadev. "Dimensionally Compatible System of Equations for Tree and Stand Volume, Basal Area, and Growth." Diss., Virginia Tech, 1999. http://hdl.handle.net/10919/29609.
Full textPh. D.
Mellqvist, Claes. "Proterozoic crustal growth along the Archaean continental margin in the Luleå area, northern Sweden." Licentiate thesis, Luleå tekniska universitet, 1997. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-18235.
Full textSeimu, Somo M. L. "The growth and development of coffee and cotton marketing co-operatives in Tanzania, c.1932-1982." Thesis, University of Central Lancashire, 2015. http://clok.uclan.ac.uk/16695/.
Full textAlkadi, Abdullah. "Hedonic Analysis of Housing Prices Near the Portland Urban Growth Boundary, 1978-1990." PDXScholar, 1996. https://pdxscholar.library.pdx.edu/open_access_etds/1345.
Full textAqeel, Abdullah Mohammad. "USING MANUAL DEFOLIATION TO SIMULATE SOYBEAN RUST: EFFECT ON GROWTH AND YIELD FORMATION." UKnowledge, 2011. http://uknowledge.uky.edu/gradschool_diss/223.
Full textGoh, Wui Hean. "Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47720.
Full textChikono, Charles. "Modelling the growth of mean top height and basal area of Eucalyptus grandis in Zimbabwe." Thesis, University of Canterbury. Forestry, 1994. http://hdl.handle.net/10092/8887.
Full textHeine, Karen M. "Diagnosing the growth management disconnect between policy and practice in the greater Orlando metropolitan area." Honors in the Major Thesis, University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/1272.
Full textBachelors
Sciences
Political Science
Hartmann, Jana [Verfasser]. "MOVPE selective area growth of GaN/InGaN rod and fin core-shell LEDs / Jana Hartmann." München : Verlag Dr. Hut, 2018. http://d-nb.info/1155056388/34.
Full textSharma, Dhananjay Kumar. "Growth and characterization of large area graphene and molybdenum disulfide by chemical vapor deposition (CVD)." Doctoral thesis, Universidade de Aveiro, 2018. http://hdl.handle.net/10773/23669.
Full textThe present work is aimed to provide description of experimental part of graphene and two-dimensional structures. State-of-the-art techniques employing chemical vapor deposition (CVD) were used to deposit graphene and two-dimensional structures for their multidisciplinary applications including nano-electronics and semi-conducting industries. All the problems, suggestions and other important issues related to the growth and parameterizing the optimum condition for strictly monolayer to few layers have been briefly discussed. This may give double benefits such as realizing 2D electronic devices with high carrier motilities and understanding the behaviour of these 2D materials upon small ion intercalation. The as synthesized graphene grown on copper (Cu) substrate showed the ideal Raman spectrum with least defect concentration. The presence of very small D peaks confirmed the high quality of graphene crystals with strictly monolayer to few layers. Moreover, High Resolution X-rays Spectroscopy (HR-XPS) analysis showed the high quality graphene with C 1s in sp2 configuration (with binding energy at ~284.8 eV). The absence of other components resembled the purity of graphene and again reconfirmed the good quality of synthesized graphene. The Raman image mapping, demonstrated the full coverage of large area graphene on copper substrate. Additionally, the High Resolution Transmission Electron Microscopy (HRTEM) results reconfirmed that the high crystalline nature with two-type of rotational planes, which may attributed to the presence of wrinkles formed during the transfer of graphene sheet on TEM grids. This thesis is also devoted to the heteroatom doping in order to tune the electronic properties of graphene. Ammonia (NH3) was used herein to provide nitrogen (N) as a source for foreign atom for the doping of pure graphene. Here again, efforts were made to discuss all the problems, suggestions and other important issues related to growth and parameterizing the optimum conditions for in-situ ammonia doping of graphene on Cu. The substrate (thickness of films) playing role in the defect creations was also discussed. Raman results showed the enhanced D and D’ peaks, which confirmed the doping of graphene by NH3. HRXPS showed the C 1s core level centred at a BE of 284.5 eV, ascribed to C sp2 can be co-related with the good quality of C. Thus, in context with the XPS, the graphene grown on 20 µm Cu substrate showed the better nitrogen intercalation in the graphene sheets under the same growing conditions. Two components (substitutional at BE of 401.7 eV and pyridinic at BE of 398.5 eV) were clearly distinguished in the respective N 1s core level. The doping with substitutional type of configuration, involves three nitrogen valence electron forming three σ– bonds, one electron filling the π–states, and the fifth electron entering the π*–states of the conduction band, and altogether provide a strong doping effect. The presented work also reported a study demonstrating an in-situ method for the quantitative characterization of nanoscale electrostatic properties of as-grown multilayer-graphene (MLG) sheets on nickel (Ni) by combining atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). Large area epitaxial MLG sheets were grown on Ni by using CVD technique. The high crystalline nature of MLG sheets on Ni was confirmed by Raman spectroscopy with the FWHM value as low as ~20 cm-1 for G peak. We performed the charge injection (and subsequent charge diffusion over time) on the as synthesized graphene on Ni. The results unveiled that: (i) MLG surface can be either positively or negatively charged through injection process using Pt coated Si-based AFM probes; (ii) the charges can be accumulated and eventually reached to saturated concentrations of (+4.45±0.1) μC/m2 and (−1.3±0.1) μC/m2 , respectively; and (iii) the charge diffusion coefficients on graphene surface were measured to be (1.50±0.05) × 10−16 m2 /s and (0.64±0.05) × 10−16 m2 /s for the positive and the negative charges, respectively. The concerned experiment related to the discovery of charge injection in MLG may pave the way for designing a new class of energy harvesting devices. In addition to this, study also demonstrated a technique for nano-patterning/charge lithography of surface charges by contact electrification, which could be a promising application to create charged nanostructures for next generation graphene based nano-electronic devices. A brief description on the quality of transferred substrate has also been noted. Various substrates such as SiO2/Si and Au substrate have been used. A relative quality comparison between before and after transfer of graphene has been critically described. Results from HRXPS show the iron monolayer interaction with graphene. Lastly, this research also showed the major parameterizing and synthesizing steps, and the work flow for the high quality TMDs materials (such as MoS2) by modifying the current CVD equipment. A thorough review of the fundamental properties as well as methods of synthesis, properties and problems related to the growth of 2D materials was also highlighted. The effect of pressure and other conditions for the growth of high quality were fully described. This study found 50mbar as an optimum pressure for the growth of large area MoS2 having a direct bandgap of 1.6eV. Micro-Raman results clearly showed distinguish E1 2g and A1 g peaks and HRXPS re-confirmed its high quality by the different Mo and S core-level peaks. Additionally, employing Focused ion beam equipped with SEM (scanning electron microscopy) technique (FIB), the present study prepared platinum (Pt) electrodes required for the electrical measurements. The result showed: (i) the ohmic and semi-conducting behavior of the crystals; (ii) the importance of high-quality singlelayer (SL) MoS2 in the semi-conducting industries; and (iii) the potential of high quality SL MoS2 for replacing graphene in near future.
O presente trabalho, tem com objetivo promover a descrição da parte experimental da síntese de grafeno e de estruturas bidimensionais (2D). Foram usadas as técnicas já existentes, que aplicam deposição química na fase de vapor (CVD), para a síntese de grafeno e estruturas bidimensionais com aplicações multidisciplinares, como indústrias de nano-eletrónicos e de semicondutores. Todos os problemas, sugestões e questões importantes relacionados com o crescimento e parametrização da condição ótima para formação de estritamente monocamadas a pequenas camadas foram brevemente discutidas. Isto pode trazer benefícios duplos como a produção de dispositivos eletrónicos 2D com altas motilidades de transporte e o entendimento do comportamento dos materiais 2D sujeitos a intercalação iónica. Os grafenos sintetizados no substrato cobre (Cu) apresentaram um espectro ideal de Raman com uma concentração de defeitos menor. A presença de pequenos picos D confirmou a elevada qualidade dos cristais de grafeno com estritamente monocamadas a pequenas cadeias. Além disso, a espectroscopia de Raios-X de alta resolução (HR-XPS) mostrou o grafeno de elevada qualidade com C 1s em configuração sp2 (com energia de ligação a ~284.8 eV). A ausência de outros componentes reforça a pureza e a qualidade do grafeno sintetizado. As imagens de mapping Raman demonstraram a cobertura total do grafeno de elevada área no substrato cobre. Adicionalmente, os resultados de microscopia de transmissão eletrónica de alta resolução (HRTEM) confirmaram a elevada natureza cristalina com dois tipos de planos rotacionais que podem ser atribuídos à presença de rugas durante a transferência de folhas de grafeno nas grelhas de TEM. Esta tese dedica-se também à dopagem heteroatómica do grafeno com o objetivo de alterar as suas propriedades eletrónicas. A amónia (NH3) foi usada como fonte de azoto (N) como átomo externo para a dopagem do grafeno puro. Mais uma vez, foram feitos esforços para discutir todos os problemas, sugestões e outras questões importantes relacionadas com o crescimento e parametrização das condições ótimas para a dopagem in-situ de amónia do grafeno no cobre. O papel do substrato (espessura do filme) na criação de defeitos foi também discutida. Os resultados de Raman mostram o aumento dos picos D e D’, o que confirma a dopagem do grafeno por NH3. Os dados de HRXPS mostraram o pico C 1s centrado a uma energia de ligação (BE) de 284.5 eV, atribuído ao C sp2 que pode ser correlacionado com a boa qualidade do C. Então, de acordo com o XPS, o grafeno que cresceu no substrato Cu 20 µm apresentou uma melhor intercalação do azoto nas folhas de grafeno sob as mesmas condições de crescimento. As duas componentes (substitucional a BE de 401.7 eV e piridínica de 398.5 eV) foram claramente distinguidas no respetivo pico N 1s. A dopagem com o tipo de configuração substitucional envolve três eletrões de valência do nitrogénio formando três ligações σ, um eletrão a preencher os estados π e o quinto eletrão no estado π* da banda de condução que conduzem, no total, a um forte efeito de doping. O presente trabalho também reporta um método in-situ para a caraterização quantitativa das propriedades eletrostáticas na escala nano das folhas de grafeno multicamada (MLG) crescidas no níquel (Ni) por combinação de dados de microscopia de força atómica (AFM) e microscopia de força atómica Kelvin (KPFM). Folhas MLG de larga área epitaxial cresceram no Ni usando a técnica CVD. A elevada natureza cristalina das folhas MLG no níquel foi confirmada por espectroscopia Raman com valor de FWHM tão baixo como ~20 cm-1 para o pico G. Foi feita a injeção de carga (e subsequente difusão de carga com o tempo) no recém sintetizado grafeno no Ni. Os resultados revelaram que : (i) a superfície MLG pode ser carregada quer positivamente quer negativamente pelo processo de injeção usando sondas de Si revestidas de Pt; (ii) as cargas podem ser acumuladas e eventualmente atingir concentrações de saturação de (+4.45±0.1) μC/m2 e (−1.3±0.1) μC/m2 , respetivamente; e (iii) os coeficientes de difusão de carga na superfície medidos foram de (1.50±0.05) × 10−16 m2 /s e (0.64±0.05) × 10−16 m2 /s para as cargas positivas e negativas, respetivamente. As experiências relacionadas com a descoberta de injeção de carga no MLG podem conduzir a uma maneira de desenhar uma nova classe de dispositivos de recolha de energia. Além disso, este estudo também demonstra uma técnica para nano-modelação/litografia de carga das superfícies de carga por eletrificação do contacto, que pode vir a ser uma aplicação promissora para criar nanoestruturas carregadas para a próxima geração de dispositivos nanoeletrónicos baseados em grafeno. Uma breve descrição da qualidade dos substratos transferidos foi também explorada. Foram usados vários substratos, como SiO2/Si e Au. Uma comparação qualitativa da qualidade entre a transferência do grafeno antes e depois foi criticamente descrita. Os resultados de HRXPS mostram a interação da camada de ferro com o grafeno. Por fim, esta pesquisa também mostrou as principais etapas de parametrização e síntese, e o fluxo de trabalho para materiais de elevada qualidade TMDs (como MoS2), por modificação do actual aparelho de CVD. Uma revisão completa das propriedades fundamentais, assim como do método de síntese, propriedades e problemas relacionados com o crescimento de materiais 2D foram também salientados. O efeito da pressão e outras condições para o crescimento de elevada qualidade foram completamente descritos. Este estudo indica que a pressão ótima para o crescimento de uma larga área MoS2 com uma bandgap direta de 1.6 eV é de 50 mbar. Os resultados de micro-Raman mostram claramente a distinção de picos E1 2g e A1 g picos e os dados de HR-XPS reconfirmam a sua elevada qualidade através de diferentes picos de nível interno de Mo and S. Além disso, através do uso da técnica microscopia eletrónica de varrimento (SEM) com feixe de iões focalizados (FIB), foram preparados elétrodos de platina necessários para medidas elétricas. O resultado mostrou: (i) o comportamento óhmico e semi-condutor dos cristais; (ii) a importância das monocamadas de elevada qualidade (SL) MoS2 nas indústrias de semi-condutores e (iii) o potencial das SL MoS2 de elevada qualidade para substituir o grafeno num futuro próximo.
Zhao, Suwen. "Simulating urban growth for Baltimore-Washington metropolitan area by coupling SLEUTH model and population projection." Thesis, Virginia Tech, 2015. http://hdl.handle.net/10919/73649.
Full textMaster of Science
Baumann, Gerald. "Contacting families an intentional project to contact new families moving to the Smithville area /." Theological Research Exchange Network (TREN), 1993. http://www.tren.com.
Full textWitte, Becky A. "Impacts of Climate Change and Population Growth on Water Stress in the Tucson Active Management Area." Thesis, The University of Arizona, 2013. http://hdl.handle.net/10150/293624.
Full textNyland, Kirk (Kirk Montgomery) 1971. "Effects of the Washington State Growth Management Act on housing development in the greater Seattle area." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8633.
Full textIncludes bibliographical references (p. 85-86).
This paper explores housing development in the Greater Seattle area in the context of the Washington State Growth Management Act. To establish an accurate picture of the workings of the Greater Seattle housing market, recent trends in regional employment growth, housing production, and home price movements are analyzed. Because the GMA imposes restrictions on development at portions of the region's urban/rural fringe, close attention is paid to the probable effects of constricting the region's supply of developable land, and to identification of development costs associated with denser housing typologies. Because the GMA envisions a network of Greater Seattle "Urban Centers" having high employment and household densities together with good access to roads, high levels of infrastructure and community resources, and good access to mass transit, two specific urban centers are reviewed: the Uptown Queen Anne Urban Center near downtown Seattle, and the Downtown Redmond Urban Center in Seattle's eastern suburbs.
by Kirk Nyland.
S.M.
Kuhn, Louise. "Why growth monitoring fails : an exploratory study of child malnutrition intervention in a rural African area." Master's thesis, University of Cape Town, 1991. http://hdl.handle.net/11427/13538.
Full textThis study is an exploratory one of growth monitoring in a rural African village, Thornhill. Growth monitoring is a primary health care approach to prevent child malnutrition in under-developed areas promoted by a variety of development agencies, particularly UNICEF, as a part of the "child survival revolution." It involves weighing children regularly and plotting their weights on a growth chart retained by the child's mother. Growth charts provide a visual display of a child's growth to allow health workers and mothers to identify early signs of growth faltering in order to facilitate ameliorative action (usually food supplementation or nutrition education) to prevent malnutrition. It also aims to facilitate the active participation of mothers in ensuring their child's continual good growth. The history of growth monitoring and its use in the South African context is discussed. The underlying rationale and component processes needed to implement it effectively are identified in a review of process evaluation studies of growth monitoring. Thornhill is an impoverished African rural area in the Ciskei in which malnutrition is a serious health problem and growth monitoring has been systematically implemented. However, although the health service had a demonstrated capacity for successful health interventions it had been unable to improve nutritional status. Background information and previous research in the area is presented. The study aimed to explore why growth monitoring had failed to improve nutritional status in Thornhill by investigating the way in which the component objectives of growth monitoring in terms of making growth visible, facilitating nutrition intervention and facilitating mothers' participation in their children's care were perceived by mothers and health workers.
Eakin, Rodger Dwight. "Leading a church in a transitional area to establish and adopt plans necessary for revitalization and growth." Theological Research Exchange Network (TREN), 1987. http://www.tren.com.
Full textOguz, Hakan. "Modeling urban growth and land use/land cover change in the Houston Metropolitan Area from 2002 - 2030." Diss., Texas A&M University, 2003. http://hdl.handle.net/1969.1/2231.
Full text