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Journal articles on the topic 'HALL-sensor'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Tymochko, M. D., and Ya M. Olikh. "ACOUSTOSENSITIVITY SENSOR BASED ON SEMICONDUCTOR HALL SENSOR." Sensor Electronics and Microsystem Technologies 4, no. 1 (January 30, 2007): 44–49. http://dx.doi.org/10.18524/1815-7459.2007.1.113150.

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2

Schott, Ch, P. A. Besse, and R. S. Popovic. "Planar Hall effect in the vertical Hall sensor." Sensors and Actuators A: Physical 85, no. 1-3 (August 2000): 111–15. http://dx.doi.org/10.1016/s0924-4247(00)00328-9.

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3

Yu, Hui-yang, Ming Qin, and Meng Nie. "MEMS Hall effect pressure sensor." Electronics Letters 48, no. 7 (2012): 393. http://dx.doi.org/10.1049/el.2011.4052.

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4

in 't Hout, S. R., and S. Middelhoek. "High temperature silicon Hall sensor." Sensors and Actuators A: Physical 37-38 (June 1993): 26–32. http://dx.doi.org/10.1016/0924-4247(93)80007-4.

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5

Kvitkovič, J., and M. Majoroš. "Three-axis cryogenic Hall sensor." Journal of Magnetism and Magnetic Materials 157-158 (May 1996): 440–41. http://dx.doi.org/10.1016/0304-8853(95)01221-4.

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6

Zhang, Yong Jie, Zhi Yi Fang, and Jian Jin. "Design and Analysis of Dual Hall Position Sensor with Automatic Direction Recognizing and Pre-Positioning Function." Applied Mechanics and Materials 599-601 (August 2014): 860–63. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.860.

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As an electromagnetic position sensor, Hall position sensor is widely used in various fields. In this paper, we discussed the working principle of the Hall sensor, and proposed a new method on direction recognizing technology. The dual Hall sensor structure has automatical direction recognizing and pre-positioning function, which can improve the adaptability of the sensor. Meanwhile, this new design can be used for other position sensor applications.

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7

Zhang, Xi, Yiyun Zhao, Hui Lin, Saleem Riaz, and Hassan Elahi. "Real-Time Fault Diagnosis and Fault-Tolerant Control Strategy for Hall Sensors in Permanent Magnet Brushless DC Motor Drives." Electronics 10, no. 11 (May 25, 2021): 1268. http://dx.doi.org/10.3390/electronics10111268.

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The Hall sensor is the most commonly used position sensor of the permanent magnet brushless direct current (PMBLDC) motor. Its failure may lead to a decrease in system reliability. Hence, this article proposes a novel methodology for the Hall sensors fault diagnosis and fault-tolerant control in PMBLDC motor drives. Initially, the Hall sensor faults are analyzed and classified into three fault types. Taking the Hall signal as the system state and the conducted MOSFETs as the system event, the extended finite state machine (EFSM) of the motor in operation is established. Meanwhile, a motor speed observer based on the super twisting algorithm (STA) is designed to obtain the speed signal of the proposed strategy. On this basis, a real-time Hall sensor fault diagnosis strategy is established by combining the EFSM and the STA speed observer. Moreover, this article proposes a Hall signal reconstruction strategy, which can generate compensated Hall signal to realize fault-tolerant control under single or double Hall sensor faults. Finally, theoretical analysis and experimental results validate the superior effectiveness of the proposed real-time fault diagnosis and fault-tolerant control strategy.

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8

Kuang, Xing Hong, Zhe Yi Yao, Zhe Yi Yao, and Shi Ming Wang. "Design of Rotational Speed Measurement System Based on the Hall Sensor." Applied Mechanics and Materials 427-429 (September 2013): 596–99. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.596.

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This paper introduces a design of a STC89C52 microcontroller as the main controller, the motor speed is measured by the Hall sensor. This design uses integrated Hall sensor, which has a frequency response, high precision and anti-interference ability. This article describes the working principle of the method and method of use of the Hall sensor measurement speed

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9

Tang, Wei, Fei Lyu, Dunhui Wang, and Hongbing Pan. "A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor." Sensors 18, no. 4 (April 2, 2018): 1065. http://dx.doi.org/10.3390/s18041065.

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10

Hamiel, Steven R., Martin R. Tubach, Joel N. Bleicher, and James C. Cronan. "Determination of Palpebral Closure Using a Hall Sensor Magnet Pair." Otolaryngology–Head and Neck Surgery 110, no. 2 (February 1994): 174–76. http://dx.doi.org/10.1177/019459989411000206.

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A small device that can detect eyelid closure was designed using a Hall sensor and magnet. The ability of the sensor to differentiate blinks from saccadic motion is of vital interest in development of a device to alleviate complications of facial nerve paralysis. Twelve physically normal human subjects were used in this study. A small Hall sensor (3 × 2.5 × 1.1 mm), a device that detects magnetic fields, was attached to the lower eyelid near the lid margin, and an opposing small magnet (3 × 2 × 1 mm) was attached to the upper eyelid, also near the lid margin. Output potentials from the Hall sensor were monitored during eye blinks and saccadic eye movements to correlate sensor potentials with eye movements. Results indicate that the Hall sensor is effective at determining palpebral closure and discriminating eye closure from other eye movements. Therefore, we conclude that the Hall sensor is a reliable means for determining palpebral closure and is ideally suited for use in a facial prosthesis that uses the normal blink as a trigger to reanimate the contralateral paralyzed eyelid.

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11

Chae, Hyungil. "Circuit Modeling of a Hall Plate for Hall Sensor Optimization." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 17, no. 6 (December 31, 2017): 935–39. http://dx.doi.org/10.5573/jsts.2017.17.6.935.

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12

Yoon, Yong-Ho. "The Estimation Algorithm Design of Hall Sensor Signal Considering Safety of BLDC Motor." Transactions of The Korean Institute of Electrical Engineers 65, no. 11 (November 1, 2016): 1894–99. http://dx.doi.org/10.5370/kiee.2016.65.11.1894.

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13

Mellet, D. S., and M. du Plessis. "A novel CMOS Hall effect sensor." Sensors and Actuators A: Physical 211 (May 2014): 60–66. http://dx.doi.org/10.1016/j.sna.2014.02.026.

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14

Sander, Christian, Carsten Leube, Taimur Aftab, Patrick Ruther, and Oliver Paul. "Monolithic Isotropic 3D Silicon Hall Sensor." Sensors and Actuators A: Physical 247 (August 2016): 587–97. http://dx.doi.org/10.1016/j.sna.2016.06.038.

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15

Randjelovic, Z., A. Pauchard, Y. Haddab, and R. S. Popovic. "A non-plate like Hall Sensor." Sensors and Actuators A: Physical 76, no. 1-3 (August 1999): 293–97. http://dx.doi.org/10.1016/s0924-4247(99)00059-x.

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16

in't Hout, S. R., and S. Middelhoek. "A 400°C silicon Hall sensor." Sensors and Actuators A: Physical 60, no. 1-3 (May 1997): 14–22. http://dx.doi.org/10.1016/s0924-4247(96)01412-4.

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17

Kayal, M., and M. Pastre. "Automatic calibration of Hall sensor microsystems." Microelectronics Journal 37, no. 12 (December 2006): 1569–75. http://dx.doi.org/10.1016/j.mejo.2006.04.013.

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18

Kim, Mijin, Sunjong Oh, Wooseong Jeong, Artem Talantsev, Taehyeong Jeon, Richa Chaturvedi, Sungwon Lee, and Cheolgi Kim. "Highly Bendable Planar Hall Resistance Sensor." IEEE Magnetics Letters 11 (2020): 1–5. http://dx.doi.org/10.1109/lmag.2020.2966422.

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19

Lepkowski, T. R., G. Shade, S. P. Kwok, M. Feng, L. E. Dickens, D. L. Laude, and B. Schoendube. "A GaAs integrated hall sensor/amplifier." IEEE Electron Device Letters 7, no. 4 (April 1986): 222–24. http://dx.doi.org/10.1109/edl.1986.26352.

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20

Lv, De Gang, Ming Ming Gao, Wei Min Li, and Jie Feng. "Hall Effect Based Tracking Position Sensor." Applied Mechanics and Materials 303-306 (February 2013): 120–23. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.120.

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The photoelectric encoder can not be applied to the harsh environments with intensive vibration, moisture, oil and dust, and has the disadvantages of complex manufacturing crafts and high cost. To solve the problems above, a hall effect based tracking position sensor is proposed. Firstly, the magnetic signal reflecting the shaft velocity and position is converted into an electrical signal with the hall component. Then, the resolver-to-digital conversion is carried out by arctangent. And finally, the signals of shaft position and velocity are obtained.

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21

Huang, Shi Ze, Ya Jie He, and Qi Yi Guo. "The Simulation Technology Research of Hall Current Sensor." Applied Mechanics and Materials 241-244 (December 2012): 921–26. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.921.

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Hall current sensor is a new generation industrial sensors which was widely used in electrical measurement. After introducing the current measurement by hall sensor, the 3D model of current-carrying conductor was built by ANSYS, and the effect caused by current-carrying conductor’s shape and the position of hall sensor was analyzed. Along with the effect of electromagnetic field of adjacent phase current-carrying conductor, the ferromagnetic shield was proposed to reduce this effect and improve the measurement accuracy. The theoretical analysis is verified by the simulation results, which can do a lot in improving the product.

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22

Sachser, Roland, Johanna Hütner, Christian H. Schwalb, and Michael Huth. "Granular Hall Sensors for Scanning Probe Microscopy." Nanomaterials 11, no. 2 (February 1, 2021): 348. http://dx.doi.org/10.3390/nano11020348.

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Scanning Hall probe microscopy is attractive for minimally invasive characterization of magnetic thin films and nanostructures by measurement of the emanating magnetic stray field. Established sensor probes operating at room temperature employ highly miniaturized spin-valve elements or semimetals, such as Bi. As the sensor layer structures are fabricated by patterning of planar thin films, their adaption to custom-made sensor probe geometries is highly challenging or impossible. Here we show how nanogranular ferromagnetic Hall devices fabricated by the direct-write method of focused electron beam induced deposition (FEBID) can be tailor-made for any given probe geometry. Furthermore, we demonstrate how the magnetic stray field sensitivity can be optimized in situ directly after direct-write nanofabrication of the sensor element. First proof-of-principle results on the use of this novel scanning Hall sensor are shown.

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23

Sinha, Brajalal, Sunjong Oh, Torati Sri Ramulu, Jaein Lim, Dong Young Kim, and Cheol Gi Kim. "Planar Hall Effect Ring Sensors for High Field-Sensitivity." Advanced Materials Research 317-319 (August 2011): 1136–40. http://dx.doi.org/10.4028/www.scientific.net/amr.317-319.1136.

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Planar Hall effect sensor has been explored using multi-layer cross-shaped and bridge geometry. We present planar Hall effect in a ring-shaped geometry experimentally that shows progress of sensor sensitivity as well as output signals. Sensitivity improves about 170 times compare to cross-shaped geometry and about 1.4 times to bridge geometry in conventional measurement system. These values become 2.5 times larger at 20o measurement system. The presented ring geometry may take great potential in Planar Hall effect sensor applications.

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24

Sibilska-Mroziewicz, Anna, Sławomir Czubaj, Edyta Ładyżyńska-Kozdraś, and Krzysztof Sibilski. "The Use of Hall Effect Sensors in Magnetic Levitation Systems." Applied Mechanics and Materials 817 (January 2016): 271–78. http://dx.doi.org/10.4028/www.scientific.net/amm.817.271.

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This paper presents a new method of non-contact measurement and control of the magnetic field strength. The article discusses at first magnetic levitation phenomena and commercial Mag-Lev suspensions systems. Then it explains the Hall effect physics and example use of Hall effect sensor in educational magnetic levitation device. Next it lists some example constructions of Hall effect sensors. Finally it reveals potential new use of Hall-sensor in control system of unmanned aircraft catapult using Meissner effect.

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25

Zhao, Xiao Feng, Qian Ru Lin, Ai Lin Mu, Dian Zhong Wen, and Hong Quan Zhang. "Effects of Hall Output Probes Shape on Magnetic Characterization of Hall Magnetic Field Sensor Based on MOSFET." Key Engineering Materials 645-646 (May 2015): 595–99. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.595.

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This paper presents the effects of Hall output probes shape on the magnetic characteristic of magnetic field sensors with Hall output probes, which is based on metal-oxide-semiconductor field effect transistor (MOSFET). The Hall sensor chips are fabricated on <100> silicon substrates with high resistivity by using CMOS technology. Experiment results show that, when drain-source voltage VDS=5.0 V, the magnetic sensitivity of the magnetic field sensor with the concave Hall output probes and channel length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 53.3 mV/T, 32.54 mV/T and 20.32 mV/T, respectively. At the same condition, the magnetic sensitivity of the magnetic field sensor with convex Hall output probes and the channel length-width ratio of 160 μm/80 μm is 76.8 mV/T.

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26

Kaewjumras, Yongyut, Jirawat Prabket, Wisut Titiroongruang, and Surasak Niemcharoen. "Contactless Silicon-Based Multi-Dimensional Hall Sensor with Simultaneous Magnetic Sensing and Omni-Rotational Angle Measurement." International Journal of Engineering Research in Africa 41 (February 2019): 51–59. http://dx.doi.org/10.4028/www.scientific.net/jera.41.51.

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This experimental research proposes a contactless silicon-based two-dimensional (2D) Hall sensor capable of simultaneous parallel-and perpendicular-directional magnetic sensing, with a 360° angle measurement. The Hall sensor was of non-symmetrical five-ohmic contact configuration (C1 – C5). In the study, experiments were carried out in three stages. In the first-stage experiment, the current (I) and voltage (V) of the 2D Hall sensor were determined under three schemes: schemes A (C1&C2), B (C2&C5), and C (C3&C4). In the second-stage experiment, the parallel and perpendicular absolute sensitivities of the 2D sensor were examined. Considering the discrepancy between the parallel and perpendicular absolute sensitivities, signal conditioning circuitry was incorporated into the sensor system to compensate, and the rotational angles measured in the final-stage experiment. The results revealed that the I-V curves were dominantly linear, corresponding to Ohm’s law. However, the parallel and perpendicular absolute sensitivities were low and unequal. Thus, signal conditioning circuitry was incorporated into the system to address the discrepancy and improve the performance. Importantly, the 2D Hall sensor exhibited a mere ±3odiscrepancy between the measured and reference rotational angles, given the magnetic flux density of 1000 G, with the hysteresis error of 2.8%. In essence, the proposed contactless silicon-based 2D Hall sensor possesses high potential for high-precision industrial applications.

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27

Qiu, Zhao Yun, Zong Bao Zhang, Qi Tao Liu, and Guang Dong Jiang. "Research of Linear Differential Hall Sensor Modeling and Output Characteristics Experiment." Advanced Materials Research 383-390 (November 2011): 1488–94. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1488.

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The purpose of this paper is to model and study linear differential Hall sensor. A component for linear differential Hall sensor model was constructed, then a number of experiments were performed to check its output characteristics and temperature characteristics.Two Hall-components formed a linear differential Hall model,which had two independent outputs outputing differential voltage. The results show that the model significantly reduces quiescent output voltage, the signal amplitude increased 99.5%, sensitivity ≥ 40mV/mT, linearity error ≤ 0.5%, zero drift coefficient ≤0.023mV/°C.It is concluded that outputing differential voltage can prohibit common-mode interference and zero shift.The model will has self temperature compensation and nonlinear correctiion.In the future ,this model will practicaly in the current sensor.

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28

Ma, Zhong Li, and Hong Da Liu. "Temperature Error Compensation New Method of MFL Sensor to Oil-Gas Pipeline Corrosion Inspection." Advanced Materials Research 204-210 (February 2011): 1026–30. http://dx.doi.org/10.4028/www.scientific.net/amr.204-210.1026.

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Magnetic flux leakage (MFL) inspection is a common method for detecting inner corrosions of oil-gas pipelines; the Hall Effect element is the core sensor of MFL inspections. The Hall sensor is sensitive to temperature, so environmental changes will lead to output error of Hall sensors. In order to compensate for temperature errors of Hall sensors, a segment of oil-gas pipeline with diameter 6 inch was taken as a research object. A fusion model including 50 Hall sensors and 1 temperature sensor was built up, and a functional link artificial neural network optimized by the artificial immune algorithm was used to fuse the output data of the multiple sensors. The lab research results show that the artificial immune algorithm can improve training speed and precision of the functional link neural network; the model built up can compensate effectively for temperature errors of Hall sensors and under the conditions of changing temperature, the precision of magnetic flux inspections of pipelines to detect corrosions can be improved significantly.

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29

Gerken, Manuela, Aurélie Solignac, Davood Momeni Pakdehi, Alessandra Manzin, Thomas Weimann, Klaus Pierz, Sibylle Sievers, and Hans Werner Schumacher. "Traceably calibrated scanning Hall probe microscopy at room temperature." Journal of Sensors and Sensor Systems 9, no. 2 (November 13, 2020): 391–99. http://dx.doi.org/10.5194/jsss-9-391-2020.

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Abstract. Fabrication, characterization and comparison of gold and graphene micro- and nanoscale Hall sensors for room temperature scanning magnetic field microscopy applications are presented. The Hall sensors with active areas from 5 µm down to 50 nm were fabricated by electron-beam lithography. The calibration of the Hall sensors in an external magnetic field revealed a sensitivity of 3.2 mV A−1 T−1 ± 0.3 % for gold and 1615 V A−1 T−1 ± 0.5 % for graphene at room temperature. The gold sensors were fabricated on silicon nitride cantilever chips suitable for integration into commercial scanning probe microscopes, allowing scanning Hall microscopy (SHM) under ambient conditions and controlled sensor–sample distance. The height-dependent stray field distribution of a magnetic scale was characterized using a 5 µm gold Hall sensor. The uncertainty of the entire Hall-sensor-based scanning and data acquisition process was analyzed, allowing traceably calibrated SHM measurements. The measurement results show good agreement with numerical simulations within the uncertainty budget.

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30

He, Run Qin. "Design of Sensor Bearing Based on the Hall Elements." Applied Mechanics and Materials 278-280 (January 2013): 723–26. http://dx.doi.org/10.4028/www.scientific.net/amm.278-280.723.

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This paper describes a structure design of sensor bearing based on Hall element, the bearing by a Hall sensor and deep groove ball bearing, can measure speed of rotation, direction of rotation and acceleration signal etc. And with the Swedish SKF sensing bearing are compared, analyzes the bearing performance characteristics.

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31

Naldi, Andre Rizki, and Wildian Wildian. "Rancang Bangun Sistem Alarm Gempa Bumi Menggunakan Prinsip Gaya Pegas dan Penginderaan Medan Magnetik." Jurnal Fisika Unand 7, no. 4 (October 1, 2018): 374–78. http://dx.doi.org/10.25077/jfu.7.4.374-378.2018.

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Telah dirancang sistem alarm gempa bumi dengan memanfaatkan prinsip gaya pegas dan penginderaan medan magnet menggunakan sensor Efek Hall. Sistem terdiri dari dua perangkat keras yaitu sistem sensor Efek Hall dan mikrokontroler Atmega 328. Pengujian alarm gempa dilakukan dengan menjatuhkan massa dengan memvariasikan ketinggian beban yaitu 20 cm, 30 cm , and 40 cm, variasi jarak jatuh ke sensor 10 - 200 cm, dan variasi massa beban jatuh (200 g, 400 g, dan 600 g). Acuan yang digunakan untuk menandakan getaran gempa bumi adalah 2 MMI (Modified Mercally Intansity) yaitu benda-benda ringan yang digantung bergoyang. Dari hasil pengujian didapatkan bahwa sensor masih peka dalam mendeteksi getaran dengan semua variasi ketinggian dan massa beban pada jarak maksimum 90 cm.Kata-kunci : sistem alarm gempa, medan magnet, sensor Efek Hall, MMI, Mikrokontroler Atmega 328

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32

Fan, Linjie, Jinshun Bi, Kai Xi, and Gangping Yan. "Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations." Sensors 20, no. 14 (July 16, 2020): 3946. http://dx.doi.org/10.3390/s20143946.

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This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

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33

Wei, Rongshan, Shizhong Guo, and Shanzhi Yang. "Low-Power CMOS Integrated Hall Switch Sensor." Active and Passive Electronic Components 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/5375619.

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This paper presents an integrated Hall switch sensor based on SMIC 0.18 µm CMOS technology. The system includes a front-end Hall element and a back-end signal processing circuit. By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the offset voltage can be suppressed effectively. The simulation results showed that the Hall switch can eliminate offset voltage greater than 1 mV at 3.3 V supply voltage. Two modes of the Hall switch circuit, the awake mode and the sleep mode, were realized by using clock logic signals without compromising the performance of the Hall switch, thereby reducing power consumption. The test results showed that the operate point and the release point of the switch were within the range of 3–7 mT at 3.3 V supply voltage. Meanwhile, the current consumption is 7.89 µA.

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34

Jeong, Wooseong, Mijin Kim, Jae-Hyun Ha, Nora Asyikin Binti Zulkifli, Jung-Il Hong, CheolGi Kim, and Sungwon Lee. "Accurate, hysteresis-free temperature sensor for health monitoring using a magnetic sensor and pristine polymer." RSC Advances 9, no. 14 (2019): 7885–89. http://dx.doi.org/10.1039/c8ra10467k.

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35

Sumardiono, Arif. "Analisis Karakteristik Perangkat Keras Pengubah Frekuensi ke Tegangan untuk Pengukuran Kecepatan MASTS." Jurnal Teknologi Rekayasa 1, no. 1 (January 21, 2017): 47. http://dx.doi.org/10.31544/jtera.v1.i1.2016.47-52.

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Makalah ini menjelaskan proses analisis karakteristik perangkat keras pengubah frekuensi ke tegangan pada Motor Arus Searah Tanpa Sikat (MASTS) untuk proses pengukuran kecepatan motor tersebut. Sensor yang digunakan pada MASTS adalah sensor hall dengan input perubahan medan magnet dan output frekuensi. Penelitian ini bertujuan untuk menguji kelayakan perangkat keras tersebut jika digunakan untuk mengukur kecepatan MASTS. Kriteria pengujian yang digunakan yaitu sensistifitas, akurasi, kepresisian dan histerisis. Hasil pengujian menunjukan dengan input frekuensi dari AF Generator sebagai sumber ideal didapatkan sensitifitas 0,0096 V/Hz, akurasi 99,8%, kepresisian 99,81 %, dan histeresis dengan galat 0,02%, sedangkan hasil pengukuran dengan input frekuensi dari sensor hall MASTS didapatkan sensitifitas 0,0095 V/Hz, akurasi 99,6%, kepresisian 99,6%, dan histeresis dengan galat 0,4%.Kata kunci: MASTS, sensor hall, frekuensi, tegangan, kecepatan

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36

He, Rong Kai, and Hu Meng. "Research on Measuring Method of the Thickness of Quartz Bulb Shell Based on Hall Effect." Advanced Materials Research 503-504 (April 2012): 1369–74. http://dx.doi.org/10.4028/www.scientific.net/amr.503-504.1369.

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The hall sensor based on Hall Effect is in direct proportional to hall voltage produced under different magnetic field intensity, and the measuring probe designed according to principle of Hall Effect is used to measure the thickness of metal halide lamp arc tube quartz bulb shell. It is required to place magnetic steel ball in the bulb, the distance between the magnetic steel ball and probe is the thickness of bulb shell, which is in direct proportional to hall voltage produced by hall sensor in the magnetic field of magnetic steel ball. It is required to make use of single-chip machine, A/D converter, amplifier and others to constitute as a hardware circuit to conduct collection, data processing and value conversion for hall voltage and use LCD to show the thickness value of bulb shell.

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37

Zhou, Zhen, Qing Li, Xiong Li, Ren Yuan Tong, and Ge Shi. "3D Measurement Method of Underground Displacement Based on Hall and MR Effect." Applied Mechanics and Materials 333-335 (July 2013): 3–13. http://dx.doi.org/10.4028/www.scientific.net/amm.333-335.3.

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When the cylindrical NdFeB magnet was magnetized along the axle wire, the magnetic field around the magnet was symmetric about the axle wire. The output voltage of Hall sensor was proportional to magnetic induction induced by itself. Around the magnet, the magnetic induction component along the axle wire could be measured by Hall sensor. The contour line and contour surface of magnetic induction could be plotted by MATLAB. A sensor array was composed of three Hall sensors in triangular distribution, and 3D Cartesian Coordinate System was established. 3D coordinate of magnet can be measured with this sensor array based on contour surface. Underground soil deformation will change the relative position of sensor array and magnet. The size of geotechnical displacement can be calculated after getting the new 3D coordinate of magnet. Along with dual-axis magnetic sensor based on MR effect, the orientation of geotechnical displacement can be measured, and so able to measure the underground displacement.

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38

Kim, Eun-Ju, Eui-Sun Kim, and Young-Cheol Lim. "Magnet Position Sensor System using Hall Sensors." Joural of the Korea Entertainment Industry Association 5, no. 2 (June 30, 2011): 166. http://dx.doi.org/10.21184/jkeia.2011.06.5.2.166.

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39

Lozanova, Siya, Ivan Kolev, Avgust Ivanov, and Chavdar Roumenin. "2D In-Plane Sensitive Hall-Effect Sensor." Proceedings 2, no. 13 (November 30, 2018): 711. http://dx.doi.org/10.3390/proceedings2130711.

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A new 2D (two-dimensional) in-plane sensitive Hall-effect sensor comprising two identical n-Si Greek-crosses is presented. Each of the crosses contains one central square contact and, symmetrically to each of their four sides, an outer contact is available. Outer electrode from one configuration is connected with the respective opposite contact from the other configuration, thus forming four parallel three-contact (3C) Hall elements. These original connections provide pairs of opposite supply currents in each of the cross-Hall structure. Also the obligatory load resistors in the outer contacts of 3С Hall elements are replaced by internal resistances of crosses themselves. The samples have been implemented by IC technology, using four masks. The magnetic field is parallel to the structures’ plane. The couples of opposite contacts of each Greek-cross are the outputs for the two orthogonal components of the magnetic vector at sensitivities S ≈ 115 V/AT whereas the cross-talk is very promising, reaching no more than 2.4%. The mean lowest detected magnetic induction B at a supply current Is = 3 mA over the frequency range f ≤ 500 Hz at a signal to noise ratio equal to unity, is Bmin ≈ 14 μT.

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40

Kim, KunWoo, Sri Ramulu Torati, Venu Reddy, and SeokSoo Yoon. "Planar Hall Resistance Sensor for Monitoring Current." Journal of Magnetics 19, no. 2 (June 30, 2014): 151–54. http://dx.doi.org/10.4283/jmag.2014.19.2.151.

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41

Lozanova, Siya, Avgust Ivanov, and Chavdar Roumenin. "A Novel Three-Axis Hall Magnetic Sensor." Procedia Engineering 25 (2011): 539–42. http://dx.doi.org/10.1016/j.proeng.2011.12.134.

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42

Sharon, Yossi, Bagrat Khachatryan, and Dima Cheskis. "Towards a low current Hall effect sensor." Sensors and Actuators A: Physical 279 (August 2018): 278–83. http://dx.doi.org/10.1016/j.sna.2018.06.027.

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43

Blanchard, H., F. De Montmollin, J. Hubin, and R. S. Popovic. "Highly sensitive Hall sensor in CMOS technology." Sensors and Actuators A: Physical 82, no. 1-3 (May 2000): 144–48. http://dx.doi.org/10.1016/s0924-4247(99)00329-5.

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Schott, Ch, J. M. Waser, and R. S. Popovic. "Single-chip 3-D silicon Hall sensor." Sensors and Actuators A: Physical 82, no. 1-3 (May 2000): 167–73. http://dx.doi.org/10.1016/s0924-4247(99)00331-3.

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Staines, M., S. Rupp, D. Caplin, D. Yu, and S. Fleshler. "Calibration of Hall sensor AC loss measurements." IEEE Transactions on Appiled Superconductivity 11, no. 1 (March 2001): 2224–27. http://dx.doi.org/10.1109/77.920301.

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Thanh, N. T., B. Parvatheeswara Rao, N. H. Duc, and CheolGi Kim. "Planar Hall resistance sensor for biochip application." physica status solidi (a) 204, no. 12 (December 2007): 4053–57. http://dx.doi.org/10.1002/pssa.200777162.

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Sandra, K. R., Boby George, and V. Jagadeesh Kumar. "Combined Variable Reluctance-Hall Effect Displacement Sensor." IEEE Transactions on Instrumentation and Measurement 67, no. 5 (May 2018): 1169–77. http://dx.doi.org/10.1109/tim.2017.2761958.

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48

Oszwaldowski, M., and S. El-Ahmar. "Double Hall sensor structure reducing voltage offset." Review of Scientific Instruments 88, no. 7 (July 2017): 075005. http://dx.doi.org/10.1063/1.4993615.

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Buschbaum, Andreas, and Volker Plassmeier. "Angle measurement with a Hall effect sensor." Smart Materials and Structures 16, no. 4 (June 25, 2007): 1120–24. http://dx.doi.org/10.1088/0964-1726/16/4/021.

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Ronis, Nicolás, and Mariano García Inza. "Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process." Elektron 1, no. 1 (July 10, 2017): 1–7. http://dx.doi.org/10.37537/rev.elektron.1.1.5.2017.

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Un sensor Hall integrado fue diseñado y fabricado en un proceso CMOS ONC5N/F de 0.5μm provisto por MOSIS. Dentro del mismo, cuatro placas Hall con distintas geometrías fueron integradas con el objetivo de analizar su sensibilidad y resistencia desde -40°C hasta 165°C. Dentro del mismo chip también se integraron y diseñaron un amplificador y un sistema de rotación de corriente para remover su offset. Los resultados muestran una mayor sensibilidad en la placa Hall con forma de cruz y un comportamiento lineal del sensor dentro de su rango de operación.

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