Relevant bibliographies by topics / Helium ion implantation

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Helium ion implantation'

Author: Grafiati
Published: 7 June 2025
Last updated: 2 August 2025

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Journal articles on the topic "Helium ion implantation"

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Wang, Jianguang, Kelin Zhu, Xiaoling Wu, Guoan Cheng, and Ruiting Zheng. "The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation." Nanomaterials 13, no. 8 (2023): 1324. http://dx.doi.org/10.3390/nano13081324.

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Ion implantation is an effective way to control performance in semiconductor technology. In this paper, the fabrication of 1~5 nm porous silicon by helium ion implantation was systemically studied, and the growth mechanism and regulation mechanism of helium bubbles in monocrystalline silicon at low temperatures were revealed. In this work, 100 keV He ions (1~7.5 × 1016 ions/cm2) were implanted into monocrystalline silicon at 115 °C~220 °C. There were three distinct stages in the growth of helium bubbles, showing different mechanisms of helium bubble formation. The minimum average diameter of a
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Futagami, Tsuneji, Minoru Ozima, and Yoshiharu Nakamura. "Helium ion implantation into minerals." Earth and Planetary Science Letters 101, no. 1 (1990): 63–67. http://dx.doi.org/10.1016/0012-821x(90)90124-g.

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Liu, Pei, Lifeng Tian, Xuanze Li, Jianyu Cao, Yutian Ma, and Xiangmin Meng. "Structure Evolution of Nanocrystalline–Amorphous TiAl Biphase Films during Helium Ion Implantation." Coatings 13, no. 3 (2023): 632. http://dx.doi.org/10.3390/coatings13030632.

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Building nanocrystalline–amorphous biphase nanostructure has recently emerged as an advanced route to improve radiation tolerance, as the nanocrystalline–amorphous interface is expected to enhance the sink efficiencies of helium atoms. However, the structure evolution and degradation mechanisms during helium ion implantation in nanocrystalline–amorphous biphase films are still unclear. This study aimed to further understand these mechanisms through in situ observation of nanocrystalline–amorphous TiAl biphase films deposited via magnetron sputtering in a helium ion microscope. Results demonstr
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Wu, Zeen, Tiebang Zhang, Fan Zhang, Rui Hu, and Xiaoye Wang. "Microstructural Evolution and the Irradiation Sensitivity of Different Phases of a High Nb-Containing TiAl Alloy under He Ions Implantation at Room- and Elevated Temperatures." Metals 12, no. 2 (2022): 335. http://dx.doi.org/10.3390/met12020335.

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A high Nb-containing TiAl alloy Ti-45Al-8.5Nb-(W, B, Y) with nearly lamellar microstructure has been irradiated by 200 kV He2+ to a fluence of 1 × 1021 ions/m2 with a dose of about 1.1 dpa at 298 K and 773 K in this work. It is found that an amorphous layer formed on the surface, and no helium bubbles can be observed in the alloy after room temperature ion implantation. The surface roughness of the alloy increases significantly with the bombardment of helium ions, indicating that the ion implantation increases the surface defects. The high-temperature ion implantation leads to the phenomenon o
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Maya, P. N., S. Mukherjee, P. Sharma, et al. "Studies on the role of ion mass and energy in the defect production in irradiation experiments in tungsten." Nuclear Fusion 62, no. 1 (2021): 016005. http://dx.doi.org/10.1088/1741-4326/ac3521.

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Abstract Experimental investigations on the role of ion mass and the primary knock-on atoms (PKA) spectrum in the defect type, structure and defect production efficiency is presented in ion-irradiation experiments in tungsten using a combination of positron annihilation spectroscopy, transmission electron microscopy and secondary ion mass spectroscopy. Recrystallized tungsten foils were irradiated using low- (helium), medium- (boron) and high-mass (gold) ions of MeV energy for a comparable dpa and implantation range at room temperature. Depending on the ion mass and the PKA spectrum, distinctl
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Khomich, Andrey A., Alexey Popovich, and Alexander V. Khomich. "Photoluminescence Spectra of Helium Ion-Implanted Diamond." Materials 17, no. 21 (2024): 5168. http://dx.doi.org/10.3390/ma17215168.

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Ion implantation in diamond crystals is widely used both for producing conducting microstructures in the bulk of the material and for creating isolated photon emitters in quantum optics, photonics, cryptography, and biosensorics. The photoluminescence (PL) spectra of helium ion-implanted diamonds are dominated by two sharp emission lines, HR1 and HR2 (from Helium-Related), at ~536 and 560 nm. Here, we report on PL studies of helium-related optical centers in diamonds. Experiments have been carried out on a (110) plate of natural single-crystal type IIa diamonds. The uniform distribution of rad
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Kato, Masashi, Tong Li, Hitoshi Sakane, and Shunta Harada. "Observation of point defect and carrier lifetime distributions in hydrogen or helium ion implanted SiC PiN diodes for suppression of bipolar degradation." Japanese Journal of Applied Physics 64, no. 1 (2025): 010901. https://doi.org/10.35848/1347-4065/ad9fc3.

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Abstract We have reported that hydrogen or helium ion implantation can suppress the expansion of stacking faults in SiC devices. These results suggest that point defects caused by ion implantation are an important factor in suppressing the expansion. On the other hand, the depth distribution of point defects introduced by implantation of these ions has not been fully elucidated. In this study, we evaluated the point defect and carrier lifetime distributions inside SiC diodes implanted with hydrogen or helium ions by cathodoluminescence and microscopic free carrier absorption methods.
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Allen, Frances I. "A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope." Beilstein Journal of Nanotechnology 12 (July 2, 2021): 633–64. http://dx.doi.org/10.3762/bjnano.12.52.

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The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in
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Junge, Felix, Manuel Auge, Zviadi Zarkua, and Hans Hofsäss. "Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation." Nanomaterials 13, no. 4 (2023): 658. http://dx.doi.org/10.3390/nano13040658.

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In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions being implanted into monolayer graphene samples. We used electrostatic masks to create a doped and non-doped region in one single implantation step. For verification we measured the surface potential profile along the sample and proved the feasibility of lateral controllable doping. In another experiment, a voltage gradient was applied across
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Taylor, Caitlin A., Eric Lang, Paul G. Kotula, et al. "Helium Bubbles and Blistering in a Nanolayered Metal/Hydride Composite." Materials 14, no. 18 (2021): 5393. http://dx.doi.org/10.3390/ma14185393.

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Helium is insoluble in most metals and precipitates out to form nanoscale bubbles when the concentration is greater than 1 at.%, which can alter the material properties. Introducing controlled defects such as multilayer interfaces may offer some level of helium bubble management. This study investigates the effects of multilayered composites on helium behavior in ion-implanted, multilayered ErD2/Mo thin film composites. Following in-situ and ex-situ helium implantation, scanning and transmission electron microscopy showed the development of spherical helium bubbles within the matrix, but prima
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Dissertations / Theses on the topic "Helium ion implantation"

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Reed, G. T. "Optical strip waveguides in lithium niobate formed by helium ion implantation." Thesis, University of Surrey, 1987. http://epubs.surrey.ac.uk/843383/.

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The implantation of helium ions into lithium niobate produces a reduction in its refractive indices, due to radiation damage produced close to the end of the ion trajectories. This reduction can be utilised to form the boundaries of optical waveguides, which form the basis of any integrated optical circuit. Stripe waveguide fabrication using ion implantation has been demonstrated for the first time in this work. Firstly a buried damage layer was formed to define the depth of the waveguide, followed by additional implants around a gold mask to form the waveguide sidewalls. The gold mask was use
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Naden, J. M. "Planar optical waveguides formed by helium ion implantation in lithium niobate." Thesis, University of Surrey, 1985. http://epubs.surrey.ac.uk/847776/.

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A buried layer of damaged material with reduced refractive indices can result from implantation of MeV He[+] ions into LiNbO[3]. The extent and distribution of this damage and the resultant refractive index profiles are found to depend on the ion energy, ion dose and implant temperature. Typical values of ion energy and dose are 1.5 MeV and 10[16] He[+] cm-2 respectively at room temperature, producing a change of -1.5% in n[o]. Provided that the small amount of damage created in the surface layer is removed by low temperature annealing (typically for 30 minutes at 200°C in a flowing oxygen
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Agarwal, Shradha. "Helium mobility in advanced nuclear ceramics." Thesis, Paris 11, 2014. http://www.theses.fr/2014PA112197/document.

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Cette thèse a pour objectif d’apporter des informations quantitatives sur la mobilité de l’hélium dans des céramiques nucléaires avancées comme TiC, TiN et ZrC, soumises à des traitements thermiques ou bien en présence de dommages d’irradiation. L’approche expérimentale développée au cours de ce travail est basée sur l’implantation ionique d’ions d’hélium-3 de 3 MeV en profondeur dans les trois matériaux précédemment cités et sur la mesure du profil de concentration en profondeur de l’isotope 3He au moyen d’une réaction nucléaire spécifique induite par des deutérons, 3He(d, p0)4He. La microsco
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Emelianova, Olga. "Modeling gas-driven microstructural evolution in ODS-EUROFER steel by high dose helium and hydrogen ion implantation." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP056.

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Les aciers ferritiques-martensitiques renforcés par dispersion d'oxydes (ODS) sont des matériaux de structure de haute performance pour les futures installations nucléaires de fission et de fusion. Un problème important pour la performance de ces aciers sous irradiation est leur résistance aux effets néfastes des gaz de transmutation, l'hélium et l'hydrogène, avec une attention particulière aux effets liés à la forte densité de nanoparticules d'oxyde. L'objectif de la thèse est une étude systématique et fondamentale de l’évolution de la microstructure induite par les gaz légers dans les aciers
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Bouhali, Gabriel. "Effects of ion irradiation and gas injection on the microstructural evolution of AlN." Electronic Thesis or Diss., université Paris-Saclay, 2023. http://www.theses.fr/2023UPASP201.

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Des matériaux isolants et optiques seront utilisés dans les futurs réacteurs à fusion pour fonctionner dans diverses applications, parmi lesquelles les systèmes de diagnostic. L'AlN, en particulier, a été proposé comme revêtement isolant dans certains concepts de réacteurs à fusion. Les applications dans ces réacteurs nécessitent que le matériau résiste aux effets des neutrons de 14 MeV avec la production d'He et d'H à des taux élevés. Les matériaux faisant face au plasma seront également exposés à des flux intenses d'He et H de faible énergie. Il est donc impératif de clarifier les mécanismes
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Klug, Jan N. "Technologie und pysikalische Eigenschaften strahlungsinduzierter Zentren in Silizium." Doctoral thesis, Universitätsbibliothek Chemnitz, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-82228.

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Die Arbeit beschäftigt sich mit der Erzeugung und den Eigenschaften strahlungsinduzierter Defekte in Silizium. Zur Erzeugung der untersuchten Zentren werden Wasserstoff- und Helium-Ionenstrahlen im MeV-Bereich verwendet. Die Untersuchung erfolgt mittels Spreading-Resistance- und temperaturabhängiger Hall-Messungen. Betrachtet wird zunächst die Erzeugung einer n-Dotierung durch Wasserstoff-Implantation in Abhängigkeit von Implantationsparametern, - bedingungen und dem Ausheilprozess. Für Helium-bestrahltes Silizium werden die Auswirkungen der Bestrahlung auf Widerstand, Ladungsträgerkonzentrat
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Reboh, Shay. "Defect engineering in H and He implanted Si." Phd thesis, Université de Poitiers, 2008. http://tel.archives-ouvertes.fr/tel-00459734.

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Ce travail porte sur l'étude des phénomènes induits par implantation d'hydrogène et/ou d'hélium dans le silicium monocristallin. Le cloquage et l'exfoliation dus à la coimplantation d'hélium et d'hydrogène ont été étudiés en fonction des paramètres d'implantation (énergie, fluence, courant, rapport H/He) et des conditions de recuit. Un comportement de type fenêtre à été observé dont le maximum de surface exfoliée dépend uniquement de la fluence. Deux mécanismes d'exfoliation liés aux régimes de fluence ont été identifiés et discutés. D'autre part, la microstructure des échantillons a été étudi
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Jublot-Leclerc, Stéphanie. "Damage induced by helium implantation in silicon carbide." Poitiers, 2007. http://www.theses.fr/2007POIT2293.

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L’endommagement induit par implantation d’hélium dans le carbure de silicium a été étudié par DRX et TEM. La simulation des spectres DRX a permis de tracer les profils de déformation. Les implantations ont été réalisées à températures ambiante (TA) et élevées sur une large gamme de fluences. Les expériences menées à TA ont montré que l’endommagement résulte de mécanismes liés à la fois aux défauts ponctuels et à des complexes hélium-lacunes. Des seuils ont été estimés pour la formation de couches de bulles et de matériau amorphe. Contrairement à ce qui est admis, la densité d’énergie nucléaire
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Ripault, Quentin. "Second-Harmonic generation in helium-implanted 2D-PPLN waveguides." Paris 13, 2013. http://scbd-sto.univ-paris13.fr/secure/edgalilee_th_2013_ripault.pdf.

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The optical confinement for second-harmonic generation (SHG) by Quasi-Phase Matching (QPM) has the interest to highly improve the conversion performances from the periodically poled structures (PP). It allows the use of low pump-power. The originality of our works is that we have performed optical waveguides by helium implantation at MeV energies in congruent and MgO doped 2D-PPLN, having a square PP lattice and a periodicity of 6. 92 µm. Firstly, we have measured the linear properties of our samples by nondestructive methods. The refractive index profiles reconstruction by i-WKB method of the
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Radu, Ionut. "Layer transfer of semiconductors and complex oxides by helium and, or hydrogen implantation and wafer bonding." [S.l. : s.n.], 2003. http://deposit.ddb.de/cgi-bin/dokserv?idn=969938284.

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Book chapters on the topic "Helium ion implantation"

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Hueging, Norbert, Martina Luysberg, Knut Urban, et al. "Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-31915-8_20.

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Trzciński, M., T. S. Kavetskyy, and A. L. Stepanov. "Optical Band Gap and Carbon Clusters in PMMA Nanocomposite Films Formed by Ion Implantation: Boron, Helium, and Xenon Ions." In NATO Science for Peace and Security Series B: Physics and Biophysics. Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-94-024-1298-7_7.

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Ma, Yutian, Junbiao Liu, Han Li, Long Cheng, Ying Zhang, and Kaigui Zhu. "Effect of Grain Orientation on Surface Damage of Niobium Doped Tungsten with Helium Implantation." In Springer Proceedings in Energy. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0158-2_14.

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Raineri, Vito, and Salvatore Ugo Campisano. "Silicon on an insulator produced by helium implantation and oxidation." In Ion Beam Modification of Materials. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50079-4.

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Luysberg, M., D. Kirch, H. Trinkaus, et al. "Relaxation of Si1-xGex buffer layers on Si(100) through helium ion implantation." In Microscopy of Semiconducting Materials 2001. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-37.

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Conference papers on the topic "Helium ion implantation"

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Wang, Zhao, Xiaolei Wen, Kai Zou, et al. "Enhanced photoresponse beyond the bandgap spectral limit of a normal-incidence silicon photodetector by helium-ion implantation." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sf2j.5.

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We enhance the photoresponse beyond the bandgap spectral limit of a normal-incidence silicon photodetector by helium-ion implantation. The minimal detectable optical power is improved from −33.2 dBm to −63.1 dBm at 1550-nm wavelength.
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Shengwu Chang, Brian Gori, Curt Norris, Jeff Klein, and Kurt Decker-Lucke. "High energy hydrogen and helium ion implanter." In 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6940027.

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Guo, Baonian, Hans-Joachim L. Gossmann, Andrew Waite, et al. "Process characterization for hydrogen and helium implantation." In 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6939989.

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Biondo, Stéphane, Gabrielle Regula, Laurent Ottaviani, et al. "Effect of Helium implantation on gettering and electrical properties of 4H-SiC epilayers." In ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548363.

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Fuse, G., M. Kuriyama, M. Sugitani, and M. Tanaka. "Doping mechanism of helium-based plasma." In 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6939957.

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Sojak, Stanislav, Vladimi´r Krsˇjak, and Werner Egger. "Advanced Fe-Cr Alloys Studied by Pulsed Low Energy Positron System Before and After Helium Ions Implantation." In ASME 2009 Pressure Vessels and Piping Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/pvp2009-77537.

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Positron annihilation spectroscopy (PAS) is a non-destructive technique which provides information about microstructural damage of structural materials. In this paper, the Pulsed Low Energy Positron System (PLEPS) at the research reactor FRM-II at TU Munich was used to study depth profiling of binary Fe-Cr alloys. Fe-Cr model alloys with different chromium content were investigated in the as-received state as well as after helium ion implantation (dose up to 6.24×1017 ions/cm−2). Measured results show changes in the size of defects after implantation and also in non-implanted specimens dependi
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Haynes, Katherine, Xunxiang Hu, Brian D. Wirth, Christopher Hatem, and Kevin S. Jones. "Ultralow Energy, Elevated Temperature Implants of High Doses of Helium into Silicon." In 2018 22nd International Conference on Ion Implantation Technology (IIT). IEEE, 2018. http://dx.doi.org/10.1109/iit.2018.8807968.

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Wakabayashi, H., T. San-no, T. Toriyama, and N. Hayashi. "The effect of temperature during helium ion implantation-induced crystallization of iron-based amorphous alloys." In Proceedings of the 2002 14th International Conference on Ion Implantation Technology. IEEE, 2002. http://dx.doi.org/10.1109/iit.2002.1258074.

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Rui Wu, Wei Deng, Shinji Sato, et al. "A 60-GHz efficiency-enhanced on-chip dipole antenna using helium-3 ion implantation process." In 2014 44th European Microwave Conference (EuMC). IEEE, 2014. http://dx.doi.org/10.1109/eumc.2014.6986381.

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Perrosé, M., P. Acosta Alba, S. Reboh, et al. "Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates." In 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024. IEEE, 2024. http://dx.doi.org/10.1109/ims40175.2024.10600220.

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Reports on the topic "Helium ion implantation"

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Hattar, Khalid Mikhiel, Daniel Charles Bufford, David Robinson, and Clark Sheldon Snow. In Situ Electron Microscopy of Helium Bubble Implantation in Metal Hydrides. Office of Scientific and Technical Information (OSTI), 2014. http://dx.doi.org/10.2172/1171594.

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