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Journal articles on the topic 'Helium ion implantation'

Author: Grafiati

Published: 7 June 2025

Last updated: 2 August 2025

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1

Wang, Jianguang, Kelin Zhu, Xiaoling Wu, Guoan Cheng, and Ruiting Zheng. "The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation." Nanomaterials 13, no. 8 (2023): 1324. http://dx.doi.org/10.3390/nano13081324.

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Ion implantation is an effective way to control performance in semiconductor technology. In this paper, the fabrication of 1~5 nm porous silicon by helium ion implantation was systemically studied, and the growth mechanism and regulation mechanism of helium bubbles in monocrystalline silicon at low temperatures were revealed. In this work, 100 keV He ions (1~7.5 × 1016 ions/cm2) were implanted into monocrystalline silicon at 115 °C~220 °C. There were three distinct stages in the growth of helium bubbles, showing different mechanisms of helium bubble formation. The minimum average diameter of a

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2

Futagami, Tsuneji, Minoru Ozima, and Yoshiharu Nakamura. "Helium ion implantation into minerals." Earth and Planetary Science Letters 101, no. 1 (1990): 63–67. http://dx.doi.org/10.1016/0012-821x(90)90124-g.

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3

Liu, Pei, Lifeng Tian, Xuanze Li, Jianyu Cao, Yutian Ma, and Xiangmin Meng. "Structure Evolution of Nanocrystalline–Amorphous TiAl Biphase Films during Helium Ion Implantation." Coatings 13, no. 3 (2023): 632. http://dx.doi.org/10.3390/coatings13030632.

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Building nanocrystalline–amorphous biphase nanostructure has recently emerged as an advanced route to improve radiation tolerance, as the nanocrystalline–amorphous interface is expected to enhance the sink efficiencies of helium atoms. However, the structure evolution and degradation mechanisms during helium ion implantation in nanocrystalline–amorphous biphase films are still unclear. This study aimed to further understand these mechanisms through in situ observation of nanocrystalline–amorphous TiAl biphase films deposited via magnetron sputtering in a helium ion microscope. Results demonstr

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4

Wu, Zeen, Tiebang Zhang, Fan Zhang, Rui Hu, and Xiaoye Wang. "Microstructural Evolution and the Irradiation Sensitivity of Different Phases of a High Nb-Containing TiAl Alloy under He Ions Implantation at Room- and Elevated Temperatures." Metals 12, no. 2 (2022): 335. http://dx.doi.org/10.3390/met12020335.

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A high Nb-containing TiAl alloy Ti-45Al-8.5Nb-(W, B, Y) with nearly lamellar microstructure has been irradiated by 200 kV He2+ to a fluence of 1 × 1021 ions/m2 with a dose of about 1.1 dpa at 298 K and 773 K in this work. It is found that an amorphous layer formed on the surface, and no helium bubbles can be observed in the alloy after room temperature ion implantation. The surface roughness of the alloy increases significantly with the bombardment of helium ions, indicating that the ion implantation increases the surface defects. The high-temperature ion implantation leads to the phenomenon o

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5

Maya, P. N., S. Mukherjee, P. Sharma, et al. "Studies on the role of ion mass and energy in the defect production in irradiation experiments in tungsten." Nuclear Fusion 62, no. 1 (2021): 016005. http://dx.doi.org/10.1088/1741-4326/ac3521.

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Abstract Experimental investigations on the role of ion mass and the primary knock-on atoms (PKA) spectrum in the defect type, structure and defect production efficiency is presented in ion-irradiation experiments in tungsten using a combination of positron annihilation spectroscopy, transmission electron microscopy and secondary ion mass spectroscopy. Recrystallized tungsten foils were irradiated using low- (helium), medium- (boron) and high-mass (gold) ions of MeV energy for a comparable dpa and implantation range at room temperature. Depending on the ion mass and the PKA spectrum, distinctl

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Khomich, Andrey A., Alexey Popovich, and Alexander V. Khomich. "Photoluminescence Spectra of Helium Ion-Implanted Diamond." Materials 17, no. 21 (2024): 5168. http://dx.doi.org/10.3390/ma17215168.

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Ion implantation in diamond crystals is widely used both for producing conducting microstructures in the bulk of the material and for creating isolated photon emitters in quantum optics, photonics, cryptography, and biosensorics. The photoluminescence (PL) spectra of helium ion-implanted diamonds are dominated by two sharp emission lines, HR1 and HR2 (from Helium-Related), at ~536 and 560 nm. Here, we report on PL studies of helium-related optical centers in diamonds. Experiments have been carried out on a (110) plate of natural single-crystal type IIa diamonds. The uniform distribution of rad

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7

Kato, Masashi, Tong Li, Hitoshi Sakane, and Shunta Harada. "Observation of point defect and carrier lifetime distributions in hydrogen or helium ion implanted SiC PiN diodes for suppression of bipolar degradation." Japanese Journal of Applied Physics 64, no. 1 (2025): 010901. https://doi.org/10.35848/1347-4065/ad9fc3.

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Abstract We have reported that hydrogen or helium ion implantation can suppress the expansion of stacking faults in SiC devices. These results suggest that point defects caused by ion implantation are an important factor in suppressing the expansion. On the other hand, the depth distribution of point defects introduced by implantation of these ions has not been fully elucidated. In this study, we evaluated the point defect and carrier lifetime distributions inside SiC diodes implanted with hydrogen or helium ions by cathodoluminescence and microscopic free carrier absorption methods.

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8

Allen, Frances I. "A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope." Beilstein Journal of Nanotechnology 12 (July 2, 2021): 633–64. http://dx.doi.org/10.3762/bjnano.12.52.

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The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in

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9

Junge, Felix, Manuel Auge, Zviadi Zarkua, and Hans Hofsäss. "Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation." Nanomaterials 13, no. 4 (2023): 658. http://dx.doi.org/10.3390/nano13040658.

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In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions being implanted into monolayer graphene samples. We used electrostatic masks to create a doped and non-doped region in one single implantation step. For verification we measured the surface potential profile along the sample and proved the feasibility of lateral controllable doping. In another experiment, a voltage gradient was applied across

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10

Taylor, Caitlin A., Eric Lang, Paul G. Kotula, et al. "Helium Bubbles and Blistering in a Nanolayered Metal/Hydride Composite." Materials 14, no. 18 (2021): 5393. http://dx.doi.org/10.3390/ma14185393.

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Helium is insoluble in most metals and precipitates out to form nanoscale bubbles when the concentration is greater than 1 at.%, which can alter the material properties. Introducing controlled defects such as multilayer interfaces may offer some level of helium bubble management. This study investigates the effects of multilayered composites on helium behavior in ion-implanted, multilayered ErD2/Mo thin film composites. Following in-situ and ex-situ helium implantation, scanning and transmission electron microscopy showed the development of spherical helium bubbles within the matrix, but prima

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11

Su, Qing, Tianyao Wang, Jonathan Gigax, Lin Shao, and Michael Nastasi. "Resistance to Helium Bubble Formation in Amorphous SiOC/Crystalline Fe Nanocomposite." Materials 12, no. 1 (2018): 93. http://dx.doi.org/10.3390/ma12010093.

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The management of radiation defects and insoluble He atoms represent key challenges for structural materials in existing fission reactors and advanced reactor systems. To examine how crystalline/amorphous interface, together with the amorphous constituents affects radiation tolerance and He management, we studied helium bubble formation in helium ion implanted amorphous silicon oxycarbide (SiOC) and crystalline Fe composites by transmission electron microscopy (TEM). The SiOC/Fe composites were grown via magnetron sputtering with controlled length scale on a surface oxidized Si (100) substrate

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12

Aleksandrov, P. A., O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, and A. L. Vasiliev. "Insights into high-dose helium implantation of silicon." Kristallografiâ 69, no. 3 (2024): 494–504. http://dx.doi.org/10.31857/s0023476124030155.

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The paper reports an analysis of surface morphology variation and cavity band formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 1017 He+/cm2 without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 1017 He+/cm2

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13

Allen, Frances I., Nathan R. Velez, Rachel C. Thayer, et al. "Gallium, neon and helium focused ion beam milling of thin films demonstrated for polymeric materials: study of implantation artifacts." Nanoscale 11, no. 3 (2019): 1403–9. http://dx.doi.org/10.1039/c8nr08224c.

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14

Fan, Yexin, Ying Song, Zongwei Xu, et al. "Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing." Nanotechnology 33, no. 12 (2021): 125701. http://dx.doi.org/10.1088/1361-6528/ac40c1.

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Abstract Molecular dynamics simulation is adopted to discover the formation mechanism of silicon vacancy color center and to study the damage evolution in 4H-SiC during helium ion implantation with different annealing temperatures. The number and distribution of silicon vacancy color centers during He ion implantation can be more accurately simulated by introducing the ionization energy loss during implantation. A new method for numerical statistic of silicon vacancy color centers is proposed, which takes into account the structure around the color centers and makes statistical results more ac

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15

Wang, Tianyao, Hyosim Kim, Jonathan G. Gigax, et al. "Ion cutting of amorphous metals by using helium ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 451 (July 2019): 1–5. http://dx.doi.org/10.1016/j.nimb.2019.04.014.

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16

Fox, Daniel, Yanhui Chen, Colm C. Faulkner, and Hongzhou Zhang. "Nano-structuring, surface and bulk modification with a focused helium ion beam." Beilstein Journal of Nanotechnology 3 (August 8, 2012): 579–85. http://dx.doi.org/10.3762/bjnano.3.67.

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We investigate the ability of a focused helium ion beam to selectively modify and mill materials. The sub nanometer probe size of the helium ion microscope used provides lateral control not previously available for helium ion irradiation experiments. At high incidence angles the helium ions were found to remove surface material from a silicon lamella leaving the subsurface structure intact for further analysis. Surface roughness and contaminants were both reduced by the irradiation process. Fabrication is also realized with a high level of patterning acuity. Implantation of helium beneath the

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17

Bruus, H., and P. E. Lindelof. "Quantum hall samples prepared by helium-ion implantation." IEEE Transactions on Instrumentation and Measurement 40, no. 2 (1991): 225–27. http://dx.doi.org/10.1109/tim.1990.1032922.

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18

Veligura, Vasilisa, Gregor Hlawacek, Robin P. Berkelaar, Raoul van Gastel, Harold J. W. Zandvliet, and Bene Poelsema. "Digging gold: keV He+ ion interaction with Au." Beilstein Journal of Nanotechnology 4 (July 24, 2013): 453–60. http://dx.doi.org/10.3762/bjnano.4.53.

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Helium ion microscopy (HIM) was used to investigate the interaction of a focused He+ ion beam with energies of several tens of kiloelectronvolts with metals. HIM is usually applied for the visualization of materials with extreme surface sensitivity and resolution. However, the use of high ion fluences can lead to significant sample modifications. We have characterized the changes caused by a focused He+ ion beam at normal incidence to the Au{111} surface as a function of ion fluence and energy. Under the influence of the beam a periodic surface nanopattern develops. The periodicity of the patt

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19

Heintze, Cornelia, Frank Bergner, Reinhard Kögler, and Rainer Lindau. "The Influence of Helium and ODS on the Irradiation-Induced Hardening of Eurofer97 at 300°C." Advances in Science and Technology 73 (October 2010): 124–29. http://dx.doi.org/10.4028/www.scientific.net/ast.73.124.

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The influence of helium on the mechanical properties of reduced-activation ferritic/martensitic Cr-steels under fusion-relevant irradiation conditions is still a concern. While the fact that He can influence the mechanical properties is well established [1,2], the underlying mechanisms are not fully understood [1,2]. In this work the effect of He and displacements per atom (dpa) on the irradiation-induced hardening of Eurofer97 at 300°C was studied. Self-ion irradiation was applied to simulate the neutron-irradiation-induced damage. Helium was implanted prior to (pre-implantation), simultaneou

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20

Zhang, Feifei, Lynn Boatner, Yanwen Zhang, Di Chen, Yongqiang Wang, and Lumin Wang. "Swelling and Helium Bubble Morphology in a Cryogenically Treated FeCrNi Alloy with Martensitic Transformation and Reversion after Helium Implantation." Materials 12, no. 17 (2019): 2821. http://dx.doi.org/10.3390/ma12172821.

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A cryo-quenched 70 wt % Fe-15 wt% Cr-15 wt% Ni single-crystal alloy with fcc (face centered cubic), bcc (body centered cubic), and hcp (hexagonal close packed) phases was implanted with 200 keV He+ ions up to 2 × 1017 ions·cm−2 at 773 K. Surface-relief features were observed subsequent to the He+ ion implantation, and transmission electron microscopy was used to characterize both the surface relief properties and the details of associated “swelling effects” arising cumulatively from the austenitic-to-martensitic phase transformation and helium ion-induced bubble evolution in the single-crystal

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21

Alimov, V. Kh, B. M. U. Scherzer, V. N. Chernikov, and H. Ullmaier. "Helium reemission, desorption and microstructure evolution of graphites under helium ion implantation." Journal of Applied Physics 78, no. 1 (1995): 137–48. http://dx.doi.org/10.1063/1.360664.

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22

Veternikova, Jana Simeg, Martin Fides, Jarmila Degmova, Stanislav Sojak, Martin Petriska, and Vladimir Slugen. "Positron and nanoindentation study of helium implanted high chromium ODS steels." Journal of Electrical Engineering 68, no. 7 (2017): 62–65. http://dx.doi.org/10.1515/jee-2017-0058.

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AbstractThree oxide dispersion strengthened (ODS) steels with different chromium content (MA 956, MA 957 and ODM 751) were studied as candidate materials for new nuclear reactors in term of their radiation stability. The radiation damage was experimentally simulated by helium ion implantation with energy of ions up to 500 keV. The study was focused on surface and sub-surface structural change due to the ion implantation observed by mostly non-destructive techniques: positron annihilation lifetime spectroscopy and nanoindentation. The applied techniques demonstrated the best radiation stability

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23

Liu, Cong, Hailiang Ma, Ping Fan, et al. "Cavity Swelling of 15-15Ti Steel at High Doses by Ion Irradiation." Materials 17, no. 4 (2024): 925. http://dx.doi.org/10.3390/ma17040925.

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The titanium-stabilized austenitic stainless steel Fe-15Cr-15Ni, which shows enhanced resistance to irradiation swelling compared with more traditional 316Ti, has been selected as a core material for fast reactors. Data on the evolution of irradiation swelling in 15-15Ti steels at very high doses, which cannot be easily achieved by neutron irradiation, are still lacking. In this paper, the swelling behavior of the titanium-modified austenitic stainless steel 15-15Ti was investigated by pre-implantation of He at room temperature followed by Ni-ion irradiation at 580 °C to peak doses of 120, 240

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24

Barbot, Jean François, S. Leclerc, Christophe Tromas, et al. "Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC." Materials Science Forum 717-720 (May 2012): 485–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.485.

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Ion implantation into 4H-SiC induces a local gradient of strain which increases with the nuclear energy losses. With the increase of temperature the strain tends to become uniform in the whole implanted area requiring the migration of particles. In case of helium implantation, defects are more stabilized and their evolutions observed post thermal annealing are concomitant with the surface swelling. The local modifications imputed to the ion process lead to the formation and the pile-up of stacking faults in the highly damaged region.

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25

Karpikov, A. N., A. S. Larionov, S. B. Kislitsin, et al. "Ion implantation of helium and hydrogen in boron coatings." IOP Conference Series: Materials Science and Engineering 1005 (December 16, 2020): 012005. http://dx.doi.org/10.1088/1757-899x/1005/1/012005.

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26

Misra, A., D. Bhattacharyya, Q. Wei, and M. Nastasi. "Characterization of Helium Ion Implantation Damage in Metallic Multilayers." Microscopy and Microanalysis 16, S2 (2010): 1594–95. http://dx.doi.org/10.1017/s1431927610055510.

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27

Johnson, P. B., A. Markwitz, and P. W. Gilberd. "Shallow Nanoporous Surface Layers Produced by Helium Ion Implantation." Advanced Materials 13, no. 12-13 (2001): 997–1000. http://dx.doi.org/10.1002/1521-4095(200107)13:12/13<997::aid-adma997>3.0.co;2-k.

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28

Perinsky, V. V., I. V. Perinskaya, I. V. Rodionov, and L. E. Kuts. "Ion-beam formation of a silver-containing surface of porous silicon." Perspektivnye Materialy 4 (2023): 31–41. http://dx.doi.org/10.30791/1028-978x-2023-4-31-41.

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The results of a study of the formation of a silver-containing porous layer on the surface of single-crystal silicon KEF-4,5 by ion-beam alloying are presented. A computer simulation of the process of ion doping of silicon with KEF-4,5, high-energy helium and silver ions was carried out using the TRIM/SRIM software package in order to determine the dose and energy neighborhoods of helium and silver ions necessary and sufficient in the experiment. The relief of the porous surface, the density of quasi-pores on the surface of implanted silicon, the elemental composition of the obtained porous co

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Templier, C., F. Desage, J. C. Desoyer, et al. "Ion beam amorphization of muscovite mica." Journal of Materials Research 11, no. 7 (1996): 1819–24. http://dx.doi.org/10.1557/jmr.1996.0229.

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The microstructure of a muscovite mica exposed to a rare gas ion beam has been studied by transmission electron microscopy. The investigation of damage without implantation was carried out using argon and helium ions of sufficient energy to traverse the 100–150 nm mica specimens. For 340 keV Ar++ irradiation, amorphization of mica occurred at a fluence as low as 3.5 × 1014 ions · cm−2, which corresponds to 0.29 dpa. Muscovite can be amorphized using 80 keV helium ions, but this requires a much higher fluence and damage production of 4.6 × 10−6 ions · cm−2 and 0.60 dpa, respectively. Since heli

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Günther, H., M. Foerste, G. zu Putlitz, and Th Schumacher. "Ions in superfluid helium: measurement of the roton limited mobility." Low Temperature Physics 22, no. 2 (1996): 143–47. https://doi.org/10.1063/10.0033943.

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Different ions are used as microscopic probes for superfluid helium at temperatures ranging from 1.3 to 2.2 K. The ionic mobilities may provide new insight into the so far not well understood microscopic ion–roton scattering process. An ion source, which allows implantation of a great variety of impurity ions into liquid helium, is presented. Low-field velocities of Na+, Ag+ and Au+ ions are reported as a function of the electrical drift field and the temperature. Moreover, a temporal series of images taken by an intensifying CCD camera is presented, showing a cloud of moving Ba+ ions.

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31

Berzins, Andris, Hugo Grube, Einars Sprugis, Guntars Vaivars, and Ilja Fescenko. "Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers." Nanomaterials 12, no. 13 (2022): 2234. http://dx.doi.org/10.3390/nano12132234.

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The implantation of diamonds with helium ions has become a common method to create hundreds-nanometers-thick near-surface layers of NV centers for high-sensitivity sensing and imaging applications; however, optimal implantation dose and annealing temperature are still a matter of discussion. In this study, we irradiated HPHT diamonds with an initial nitrogen concentration of 100 ppm using different implantation doses of helium ions to create 200-nm thick NV layers. We compare a previously considered optimal implantation dose of ∼1012 He+/cm2 to double and triple doses by measuring fluorescence

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32

Slyamzhanov, E. "RADIATION MODIFICATION OF IONIC CONDUCTORS BASED ON BARIUM CERATE: THE EFFECT OF ION IMPLANTATION ON STRUCTURE AND CONDUCTIVITY." SCIENTIFIC-DISCUSSION, no. 99 (April 13, 2025): 3–6. https://doi.org/10.5281/zenodo.15207067.

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This paper examines the effect of helium ion implantation on the properties of proton conductors based on barium cerate (BaCeO₃). The crystal structure, proton conductivity mechanisms, and chemical stability of the materials are investigated. It is shown that doping with rare earth elements increases the concentration of oxygen vacancies, improving conductivity. The effect of ion irradiation is analyzed in terms of changes in the defect structure, the formation of new oxygen vacancies, and their effect on the electrophysical properties of the material. Experimental studies using thermal desorp

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33

Ovchinnikov, Viktor V., Svetlana V. Yakutina, and Nadezhda V. Uchevatkina. "Mechanical and Corrosion Properties of VT6 Titanium Alloy after Irradiation with Helium and Aluminum Lons." Key Engineering Materials 887 (May 2021): 229–34. http://dx.doi.org/10.4028/www.scientific.net/kem.887.229.

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The effect of high-dose aluminum implantation on the structural-phase state of the surface layer of titanium alloy VT6 with a fine structure (average grain size 2.3 μm) on the mechanical and corrosion properties has been investigated. It is shown that, as a result of ion irradiation, polyphase implanted layers based on α-titanium grains are formed, containing an intermetallic Ti3Al phase along the grain boundaries of α-titanium. The modified surface layers are characterized by improved mechanical properties and corrosion resistance. The noted effect is enhanced by the use of preliminary helium

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Betlej, Izabela, Marek Barlak, Jacek Wilkowski, et al. "Wettability of the surface of bacterial cellulose film modified with the ion implantation." Annals of WULS, Forestry and Wood Technology 118 (July 25, 2022): 15–21. http://dx.doi.org/10.5604/01.3001.0015.9369.

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Wettability of the surface of bacterial cellulose film modified with low energy ion implantation The paper presents the preliminary results of the modification on the water wettability of cellulose, using ion implantation method. Two kinds ions of the noble gases, i.e. helium and argon were implanted with fluences of 1e15 nand 1e16 cm-2, and with the ion energy of 60 keV. The measurements of the contact angle values show the different influence of both types ions on the hydrophobicity of the modified cellulose, but the hydrophobicity of implanted cellulose increases in all cases. The real inve

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Hsiung, L. L., S. J. Tumey, D. T. Hoelzer, and M. J. Fluss. "Nano-Oxide-Dispersed Ferritic Steel for Fusion Energy Systems." MRS Advances 3, no. 31 (2018): 1761–69. http://dx.doi.org/10.1557/adv.2018.202.

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ABSTRACTThe role of oxide nanoparticles in cavity formation of a nano-oxide-dispersed ferritic steel subjected to (Fe + He) dual-ion and (Fe + He + H) triple-ion irradiations has been studied using transmission electron microscopy to elucidate the synergistic effects of helium and hydrogen on radiation tolerance of nano-oxide-dispersed ferritic steel for fusion energy systems. The effect of oxide nanoparticles on suppressing radiation-induced void swelling is clearly revealed from the observation of preferred trapping of helium bubbles at oxide nanoparticles, which results in a unimodal distri

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36

Zhang, S. J., and F. B. Humphrey. "Effects of helium ion double implantation on CD bubble device." Journal of Applied Physics 57, no. 8 (1985): 4046–48. http://dx.doi.org/10.1063/1.334666.

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37

Garcia, P., E. Gilabert, G. Martin, et al. "Helium behaviour in UO2 through low fluence ion implantation studies." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 327 (May 2014): 113–16. http://dx.doi.org/10.1016/j.nimb.2013.11.042.

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38

Buravlyov, A. V., A. F. Vyatkin, V. K. Egorov, V. V. Kireiko, and A. P. Zuev. "Some properties of amorphous silicon produced by helium ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55, no. 1-4 (1991): 642–46. http://dx.doi.org/10.1016/0168-583x(91)96249-k.

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39

Sabelová, Veronika, Martin Petriska, Jana Veterníková, Vladimir Slugeň, Jarmila Degmová, and Simo Kilpeläinen. "Defect Detection in Fe-Cr Alloys with Positron Annihilation Doppler Broadening Spectroscopy." Materials Science Forum 733 (November 2012): 270–73. http://dx.doi.org/10.4028/www.scientific.net/msf.733.270.

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Positron annihilation Doppler broadening spectroscopy (DBS) has been used for the detection of structural defects in Fe-9wt%Cr (Fe-9Cr) alloy in the as-prepared and implanted states. Defects were created by He and H ion implantation with a kinetic energy of 250 keV. DBS is a non-destructive method and is a unique tool for the observation of open volume defects like vacancies and vacancy clusters in solids. A positron beam with variable positron energy was used for the measurement of defect depth profiles up to 1.5 µm. The obtained results provide qualitative and semi-quantitative information a

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40

Wakai, Eiichi, Shuhei Nogami, Akira Hasegawa, et al. "Effects of Helium Production and Displacement Damage on Microstructural Evolution and Mechanical Properties in Helium-Implanted Austenitic Stainless Steel and Ferritic/Martensitic Steel." Materials Science Forum 1024 (March 2021): 53–69. http://dx.doi.org/10.4028/www.scientific.net/msf.1024.53.

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The effects of helium concentration and displacement damage on microstructural evolution at low dpa and low helium concentration were mainly investigated in specimens of austenitic stainless steel 316FR or SUS304 and a high chromium martensitic steel (HCM12A). The 316FR and HCM12A specimens were implanted uniformly with helium at 823 K up to 30 appm-He or 50 appm-He by 50 MeV cyclotron accelerator using energy degraders. After the helium implantation, the microstructures were examined by a transmission electron microscopy and positron annihilation lifetime measurements. Irradiation hardening b

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Groza, A. A., P. G. Litovchenko, M. I. Starchik, V. I. Khivrych, G. G. Shmatko, and V. I. Varnina. "Long-range effect in condensed matter and its revealing in implanted with high energy light ions silicon." Nuclear Physics and Atomic Energy 11, no. 1 (2010): 66–73. https://doi.org/10.15407/jnpae2010.01.066.

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Experimental and theoretical results of long-range effects in condensed materials after energy influence were analyzed. The experimental results for silicon monocrystals irradiated by high energy hydrogen and helium ions are presented. The effect of radiation was found in the region far beyond the ion stopping range ("long-range effect") which cannot be explained in the framework of the ion implantation theory. Assumption was made concerning the soliton's mechanism of the propagation of the radiation effect.

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Bhattacharyya, D., M. J. Demkowicz, Y. Q. Wang, R. E. Baumer, M. Nastasi, and A. Misra. "A Transmission Electron Microscopy Study of the Effect of Interfaces on Bubble Formation in He-Implanted Cu-Nb Multilayers." Microscopy and Microanalysis 18, no. 1 (2012): 152–61. http://dx.doi.org/10.1017/s1431927611012219.

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AbstractMagnetron sputtered thin films of Cu, Nb, and Cu-Nb multilayers with 2.5 and 5 nm nominal layer thickness were deposited on Si and implanted with 4He+ and 3He+ ions. Secondary ion mass spectroscopy and nuclear reaction analysis, respectively, were used to measure the 4He+ and 3He+ concentration profile with depth inside the films. Cross-sectional transmission electron microscopy was used to characterize the helium bubbles. Analysis of the contrast from helium bubbles in defocused transmission electron microscope images showed a minimum bubble diameter of 1.25 nm. While pure Cu and Nb f

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Danno, Katsunori, H. Saitoh, Akinori Seki, et al. "Diffusion and Gettering of Transition Metals in 4H-SiC." Materials Science Forum 717-720 (May 2012): 225–28. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.225.

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Diffusion of transition metals in 4H-SiC has been investigated by secondary ion mass spectroscopy using epilayers and substrates implanted with titanium (Ti), chromium (Cr), iron (Fe), or nickel (Ni). In the epilayers, Cr, Fe, and Ni atoms have diffused by argon (Ar) annealing at 1780°C for 30 min. In n+ substrates, the diffusivity of the metals is smaller than that in the epilayers, and only Ni has diffused by the annealing. By the Ar or helium implantation following the implantation of transition metals, diffusion of transition metals can be successfully suppressed.

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Misiuk, Andrzej, Barbara Surma, Jadwiga Bak-Misiuk, and Vito Raineri. "Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He." Solid State Phenomena 114 (July 2006): 285–90. http://dx.doi.org/10.4028/www.scientific.net/ssp.114.285.

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The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (HP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x1017cm-2, energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at ≤ 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at ≥ 1270 K in Si:He treated under HP. HP affects the recrys

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Ломов, А. А., А. В. Мяконьких, Ю. М. Чесноков, В. В. Денисов, А. Н. Кириченко та В. Н. Денисов. "Дозовая зависимость формирования нанокристаллов в имплантированных гелием слоях кремния". Письма в журнал технической физики 44, № 7 (2018): 39. http://dx.doi.org/10.21883/pjtf.2018.07.45883.17112.

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AbstractThe possibility of nanocrystal formation in silicon layers subjected to plasma-immersion helium-ion implantation at an energy of 5 keV has been proved for the first time. The effect of the implantation dose on the microstructure of the layers has been studied by X-ray reflectometry, transmission electron microscopy and Raman scattering. It has been established that the formation of silicon nanocrystals with dimensions of 10–20 nm is accompanied by a pronounced dependence on the ion flux and occurs at a dose of 5 × 10^17 cm^–2 with subsequent annealing at 700–800°C. The excessive dose h

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Zhong, M., J. H. Li, B. Li, et al. "Influence of Helium Ion Implantation on Optical Properties of Fused Silica." Journal of Applied Spectroscopy 88, no. 2 (2021): 261–64. http://dx.doi.org/10.1007/s10812-021-01167-7.

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Lu, C., Z. Lu, G. Yu, and L. Wang. "Helium Ion Implantation Effects of 9Cr-ODS (Oxide Dispersion Strengthened) Steel." Microscopy and Microanalysis 19, S2 (2013): 1786–87. http://dx.doi.org/10.1017/s1431927613010921.

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Zhong, Mian, Liang Yang, Huahai Shen, et al. "Microstructure characterization and optical properties of sapphire after helium ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 353 (June 2015): 21–27. http://dx.doi.org/10.1016/j.nimb.2015.04.023.

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Rodríguez, R. J., A. Medrano, J. A. García, G. G. Fuentes, R. Martínez, and J. A. Puertolas. "Improvement of surface mechanical properties of polymers by helium ion implantation." Surface and Coatings Technology 201, no. 19-20 (2007): 8146–49. http://dx.doi.org/10.1016/j.surfcoat.2006.12.030.

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Ma, Changdong, Fei Lu, and Yujie Ma. "Blistering and cracking of LiTaO3 single crystal under helium ion implantation." Applied Physics A 118, no. 4 (2014): 1233–38. http://dx.doi.org/10.1007/s00339-014-8821-5.

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