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Relevant bibliographies by topics / HEMT

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Academic literature on the topic 'HEMT'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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Journal articles on the topic "HEMT"

1

Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, et al. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment betw

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Jang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study." Micromachines 11, no. 1 (2019): 53. http://dx.doi.org/10.3390/mi11010053.

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlG

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Wang, Kaihong, Yidi Zhu, Hao Zhao, Ruixue Zhao, and Binxin Zhu. "Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices." Electronics 13, no. 2 (2024): 363. http://dx.doi.org/10.3390/electronics13020363.

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Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs’ characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs o

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Xu, K., H. Y. Wang, E. L. Chen, S. X. Sun, H. L. Wang, and H. Y. Mei. "Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect." Journal of Ovonic Research 20, no. 3 (2024): 395–403. http://dx.doi.org/10.15251/jor.2024.203.395.

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In order to promotion the RF performance, a grade In1-xGaxAs channel (G-HEMT) introduced to the AlGaAs/InGaAs HEMT. The G-HEMT with the grade In1-xGaxAs channel forms a deeper potential well and confines more electrons in the channel, results in improving the DC and RF characteristics. Moreover, because of the grade In1-xGaxAs is effectively reduced the peak electric field, and leads to a significant increase in breakdown voltage (BV). Moreover, the G-HEMT also increases resistance to single event effects (SEE). The simulation results indicate that the fmax is significantly increased to 889 GH

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Chen, Kevin J., and Chunhua Zhou. "Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology." physica status solidi (a) 208, no. 2 (2010): 434–38. http://dx.doi.org/10.1002/pssa.201000631.

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6

Du, Yilin. "An Investigation of Thermal Reliability Issues and Solution Strategies for GaN-HEMT Power Devices." Applied and Computational Engineering 141, no. 1 (2025): 81–88. https://doi.org/10.54254/2755-2721/2025.21687.

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This paper discusses the thermal reliability design of high electron mobility transistor (HEMT) power in gallium nitride (GaN) devices in depth. GaN HEMTs' exceptional performance in high-frequency, high-voltage, and high-power applications has garnered a lot of interest. However, a major element limiting long-term stability is now their problems with thermal reliability. This paper provides a detailed analysis of the thermal challenges faced by GaN-HEMT power devices, including the self-heating effect, uneven heat distribution, thermal stress, and thermal resistance, and discusses correspondi

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Filippov, I. A., V. A. Shakhnov, L. E. Velikovskiy, P. A. Brudnyi, and O. I. Demchenko. "InAlN/GaN hemt plasma etching." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 1 (2020): 84–87. http://dx.doi.org/10.17223/00213411/63/1/84.

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Shakkottai, Aarti, Stephany Kim, and Ron Mitchell. "0799 Impact of Highly Effective Modulator Therapy on Obstructive Sleep Apnea in People with Cystic Fibrosis." SLEEP 46, Supplement_1 (2023): A352. http://dx.doi.org/10.1093/sleep/zsad077.0799.

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Abstract Introduction Obstructive sleep apnea (OSA) is frequently seen in people with cystic fibrosis (PwCF). The presence of upper airway pathology including adenotonsillar hypertrophy and chronic sinusitis is a known risk factor for OSA in PwCF. The widespread use of highly effective modulator therapy (HEMT) such as elexacaftor/tezacaftor/ivacaftor has led to improvements in nutritional status, lung function, and sinus disease among PwCF. However, the impact of HEMT on OSA is still unknown. Methods We conducted a single center retrospective review of polysomnographic data in PwCF between 1/1

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Umeda, Tokuo, Yoshio Cho, and Akihiro Shibatomi. "Picosecond HEMT Pholodetector." Japanese Journal of Applied Physics 25, Part 2, No. 10 (1986): L801—L803. http://dx.doi.org/10.1143/jjap.25.l801.

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del Alamo, J. A., and J. Joh. "GaN HEMT reliability." Microelectronics Reliability 49, no. 9-11 (2009): 1200–1206. http://dx.doi.org/10.1016/j.microrel.2009.07.003.

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Dissertations / Theses on the topic "HEMT"

1

Bolt, Edward Lawrence. "5-aminolaevulinic acid synthase isozymes of Rhodobacter sphaeroides : cloning, expression of structural genes, purification and characterisation of E. coli." Thesis, Queen Mary, University of London, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.336440.

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Khalil, Ibrahim. "Intermodulation distortion in GaN HEMT." Göttingen Cuvillier, 2009. http://d-nb.info/1000063275/04.

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3

Lundskog, Anders. "Characterization of AlGaN HEMT structures." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9729.

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<p>During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electr

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Sjue, Espen. "Modellering av HEMT Mikrobølge effekttransistor." Thesis, Norwegian University of Science and Technology, Department of Electronics and Telecommunications, 2006. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10311.

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<p>Arbeidet med oppgaven gikk ut på å studere ulike kalibreringsmetoder for nettverksanalysator, utarbeidelse av testkort med kalibreringskomponenter. Målinger av DC- og AC-oppførselen til transistoren, for så å benytte programmet Agilent ADS og TOM-modellen til å lage en datamodell for denne transistoren. Det ble også utarbeidet en metode for hvordan man kan gå frem for å utarbeide en datamodell for en transistor. Arbeidet resulterte i en transistormodell som viste tilsynelatende gode egenskaper, og en metode for utarbeidelse av transistormodeller som fungerte godt for den utvalgte transistor

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Buchanan, Neil Bryans. "Phase locked millimetre wave HEMT oscillators." Thesis, Queen's University Belfast, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.322829.

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Malik, Adil Mahmood. "Technology and physics of gate recessed GaN AlGaN FETs." [S.l. : s.n.], 2003. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-30157.

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Aroshvili, Giorgi. "GaN HEMT and MMIC Design and Evaluation." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085.

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<p>Gallium Nitride based devices due to their inherent material properties are considered as one of the most promising devices to realize high power, high frequency transistors with lower power consumption in next-generation applications. Although the technology has been studied since early 1970s, there is still a vast room and expectations in its yet unachieved findings. In present work the GaN technology is explored and state-of-the-art studies of GaN based HEMTs and their application in MMICs are presented. Different designs are presented and evaluated and the results are reported. In parti

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Navarrete, Moreno Francisco José. "Caracterización de Transistores Hemt en Banda Q." Tesis, Universidad de Chile, 2011. http://www.repositorio.uchile.cl/handle/2250/104301.

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Este trabajo de título tiene como objetivo diseñar y construir un sistema de caracterización de transistores HEMT. Este sistema tiene como n determinar el comportamiento de transistores candidatos a ser utilizados en el diseño de ampli cadores de bajo ruido para receptores de antenas radioastronomicas que operen en Banda 1 del proyecto ALMA. Como parte de este sistema se diseñaron y construyeron dos módulos, un módulo Bias Tee y un sistema de calibración TRL. El módulo Bias Tee permite acoplar, por un mismo canal, la señal proveniente del VNA y la polarización para entregarlas al transistor

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Waldron, Niamh 1974. "InGaAs self-aligned HEMT for logic applications." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/44293.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.<br>Includes bibliographical references (p. 123-132).<br>As CMOS scaling approaches the end of the roadmap it has become a matter of great urgency to explore alternative options to conventional Si devices for logic applications. The high electron mobilities of III-V based compounds makes them an attractive option for use as a channel material. Of these materials, InGaAs offers the best balance between a mature technology and high mobility. InGaAs high electron mobility transistors

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Zhang, Guohao. "Optical control of millimetre-wave HEMT oscillators." Thesis, University of Leeds, 1996. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.755765.

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Books on the topic "HEMT"

1

Khandelwal, Sourabh. Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-77730-2.

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2

Lenka, Trupti Ranjan, and Hieu Pham Trung Nguyen, eds. HEMT Technology and Applications. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-2165-0.

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3

Ross, R. Lee, Stefan P. Svensson, and Paolo Lugli, eds. Pseudomorphic HEMT Technology and Applications. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1630-2.

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4

Ross, R. Lee. Pseudomorphic HEMT Technology and Applications. Springer Netherlands, 1996.

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Lee, Ross R., Svensson Stefan P, and Lugli P. 1956-, eds. Pseudomorphic HEMT technology and applications. Kluwer Academic, 1996.

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6

B, Bhasin K., and United States. National Aeronautics and Space Administration., eds. Microwave response of an HEMT photoconductor. National Aeronautics and Space Administration, 1988.

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7

Mohankumar, N. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428.

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C, Claspy Paul, and Lewis Research Center, eds. Microwave characteristics of interdigitated photoconductors on a HEMT structure. National Aeronautics and Space Administration, 1988.

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9

Q, Lee Richard, and United States. National Aeronautics and Space Administration., eds. Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna. National Aeronautics and Space Administration, 1991.

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10

Griffin, Bettye. The heat of heat. Bunderful Books, 2010.

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Book chapters on the topic "HEMT"

1

Kondo, Kazuo, and Junji Komeno. "HEMT Materials." In Compound and Josephson High-Speed Devices. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4757-9774-9_5.

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2

Abe, Masayuki, and Takashi Mimura. "HEMT Devices." In Compound and Josephson High-Speed Devices. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4757-9774-9_6.

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3

Shur, Michael, and Tor A. Fjeldly. "HEMT Modelling." In Compound Semiconductor Device Modelling. Springer London, 1993. http://dx.doi.org/10.1007/978-1-4471-2048-3_3.

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4

Johnson, Wayne, and Edwin L. Piner. "GaN HEMT Technology." In Springer Series in Materials Science. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23521-4_7.

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Kundu, Atanu, and Mousiki Kar. "Multigate MOS-HEMT." In HEMT Technology and Applications. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_9.

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Kallfass, Ingmar. "III–V HEMT." In Springer Series in Optical Sciences. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-73738-2_23.

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7

Liu, Yue, Yuzhen Ma, Haiqui Guo, and Yanli Liu. "Performance Analysis of AlGaN/GaN MOS-HEMT Based Biosensors." In Lecture Notes in Mechanical Engineering. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-97-7887-4_91.

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Abstract The sensing performance of AlGaN/GaN MOS-HEMT biosensors for neutral biomolecules was investigated by Silvaco TCAD. In order to achieve excellent sensing sensitivity, the gate length (1–4 µm) and AlGaN barrier layer thickness (10–30 nm) of the MOS-HEMT were optimized. The results show that by keeping the sensing area constant, the sensing performance of MOS-HEMT decreases with the increase of the gate length. However, the sensing sensitivity increases with the increase of gate length by keeping the gate dielectric length at 0.5 µm. Moreover, the trend of ∆IDS change slows down as the

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Khandelwal, Sourabh. "Parameter Extraction in ASM-HEMT Model." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_11.

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Khandelwal, Sourabh. "Core Formulations in ASM-HEMT Model." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_4.

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Khandelwal, Sourabh. "Resources for ASM-HEMT Model Users." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_13.

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Conference papers on the topic "HEMT"

1

Jazaeri, Farzan, Majid Shalchian, Ashkhen Yesayan, et al. "Simplified EPFL HEMT Model." In 2024 IEEE European Solid-State Electronics Research Conference (ESSERC). IEEE, 2024. http://dx.doi.org/10.1109/esserc62670.2024.10719467.

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He, Quanbo, Hengyu Wang, Vasantha Pathirana, Ming Xiao, Yuhao Zhang, and Florin Udrea. "3D modelling and experimental results of Multichannel Monolithic-Cascode HEMT (MC²-HEMT)." In 2024 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2024. https://doi.org/10.1109/ecce55643.2024.10861152.

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Jiang, Xiangle, Minhan Mi, Can Gong, Yuwei Zhou, Tianhao Liu, and Xiaohua Ma. "Simulation on AlN/GaN/AlN/GaN Planar HEMT and Fin-HEMT for Low-Voltage Applications." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835385.

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Parker, Anthony E., Andrew L. Parker, Melissa C. Gorman, and Simon J. Mahon. "Thermal Analysis for HEMT Compact Models." In 2025 6th Australian Microwave Symposium (AMS). IEEE, 2025. https://doi.org/10.1109/ams63679.2025.10937827.

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Yussof, A. M. Mohamad, N. Abd Aziz, and M. F. Abdullah. "Effectiveness of the Heat Spreader in GaN HEMT Studied by a Co-Simulation Approach." In 2024 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2024. http://dx.doi.org/10.1109/icse62991.2024.10681340.

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Dasgupta, Avirup, Sudip Ghosh, Yogesh Singh Chauhan, and Sourabh Khandelwal. "ASM-HEMT: Compact model for GaN HEMTs." In 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2015. http://dx.doi.org/10.1109/edssc.2015.7285159.

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Sadeghi, Sonia, Mehdi Vadizadeh, and Rahim Faez. "Compare noise characteristic of DC-HEMT and HEMT." In 2013 21st Iranian Conference on Electrical Engineering (ICEE). IEEE, 2013. http://dx.doi.org/10.1109/iraniancee.2013.6599546.

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Sommet, R., J. A. Silva Dos Santos, A. Santos, and J. C. Nallatamby. "High frequency GaN HEMT Modeling with ASM-HEMT." In 2022 17th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2022. http://dx.doi.org/10.23919/eumic54520.2022.9923430.

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Berroth, M. "Submicron HEMT technology." In IEE Colloquium on Advanced Developments in Microelectronic Engineering. IEE, 1996. http://dx.doi.org/10.1049/ic:19961241.

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Joshin, Kazukiyo, Tatsuya Ohori, and Masahiko Takikawa. "Super-low-noise HEMT based on new HEMT noise model." In 1993 23rd European Microwave Conference. IEEE, 1993. http://dx.doi.org/10.1109/euma.1993.336801.

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Reports on the topic "HEMT"

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McCartney, Martha R., and David J. Smith. Failure Mechanisms for III-Nitride HEMT Devices. Defense Technical Information Center, 2013. http://dx.doi.org/10.21236/ada601810.

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Xing, Huili G., and Debdeep Jena. Ultrascaled AIN/GaN HEMT Technology for mm-wave RT Applications. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada538446.

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Reed, Kyle, Nance Ericson, N. Dianne Ezell, et al. GaN HEMT Fabrication for Radiation-Hardened Sensing and Communications Electronics. Office of Scientific and Technical Information (OSTI), 2022. http://dx.doi.org/10.2172/2205455.

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Tracy, Lisa A., John L. Reno, Terry Hargett, Saeed Fallahi, and Michael Manfra. MilliKelvin HEMT Amplifiers for Low Noise High Bandwidth Measurement of Quantum Devices. Office of Scientific and Technical Information (OSTI), 2018. http://dx.doi.org/10.2172/1471452.

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Kurtz, Steven Ross, David Martin Follstaedt, Alan Francis Wright, et al. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/883465.

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Grubin, H. L., M. Meyyappan, J. P. Kreskovsky, and S. M. Pincus. Numerical Studies of the Dual HEMT/Algorithm Development and Numerical Studies of Schrodinger's Equation. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada184471.

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Ericson, Nance, Kyle Reed, N. Dianne Ezell, et al. Radiation-Hardened GaN HEMT and Cell Design, Modeling, and Fabrication for Nuclear Instrumentation Applications. Office of Scientific and Technical Information (OSTI), 2022. http://dx.doi.org/10.2172/2205450.

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Dejongh, Fritz, Scott Dodelson, David McGinnis, Hogan Nguyen, and Albert Stebbins. QUIET Phase II: The Search for B-Mode Polarization in the Cosmic Microwave Background Using Coherent HEMT Detectors. Office of Scientific and Technical Information (OSTI), 2009. http://dx.doi.org/10.2172/1864248.

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Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.1780.

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10

Shah, Pankaj B., and Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada554911.

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