Relevant bibliographies by topics / HEMT AlN

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'HEMT AlN'

Author: Grafiati
Published: 1 March 2025

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Journal articles on the topic "HEMT AlN"

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Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, et al. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (2021): 727. http://dx.doi.org/10.3390/membranes11100727.

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A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEM
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Yamaoka, Yuya, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto, and Takashi Egawa. "Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates." MRS Advances 1, no. 50 (2016): 3415–20. http://dx.doi.org/10.1557/adv.2016.431.

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ABSTRACT In this study, the initial AlN layer and the vertical-direction breakdown voltage (VDBV) of AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized. Prior to the formation of the interface between the AlN layer and the Si substrate, only trimethylaluminum (TMA) was introduced without ammonia to control the crystal quality of initial AlN layer (TMA preflow). HEMT structures were simultaneously grown on identical AlN layers on Si substrates (AlN/Si templates) grown using different TMA preflow temperatures. The density of screw- or mixed-type dislocations in the initial A
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Çörekçi, S., D. Usanmaz, Z. Tekeli, M. Çakmak, S. Özçelik, and E. Özbay. "Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure." Journal of Nanoscience and Nanotechnology 8, no. 2 (2008): 640–44. http://dx.doi.org/10.1166/jnn.2008.a181.

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We present surface properties of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AlN interlayer grown on High Temperature (HT)-AlN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 108–109 cm−2. The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100–250 nm. The typical rms values of HEMT st
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Shrestha, Niraj Man, Yuen Yee Wang, Yiming Li, and E. Y. Chang. "Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT." Himalayan Physics 4 (December 22, 2013): 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.

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High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carr
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Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain
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Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, et al. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment betw
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Gusev, A. S., A. O. Sultanov, A. V. Katkov, et al. "Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Mikroèlektronika 53, no. 3 (2024): 265–73. http://dx.doi.org/10.31857/s0544126924030086.

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Experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier were obtained using molecular beam epitaxy with plasma activation of nitrogen. The layer resistance of the optimized structures was less than 230 Ω/¨. The scattering processes that limit the mobility of two-dimensional electron gas in undoped AlN/GaN HSs with an ultrathin AlN barrier have been studied. It is shown that in the ns range characteristic of AlN/GaN HEMT HSs (ns 1 × 1013 cm–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.
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Roensch, Sebastian, Victor Sizov, Takuma Yagi, et al. "Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon." Materials Science Forum 740-742 (January 2013): 502–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.502.

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The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.
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Михайлович, С. В., Р. Р. Галиев, А. В. Зуев, А. Ю. Павлов, Д. С. Пономарев та Р. А. Хабибуллин. "Влияние длины затвора на скорость инжекции электронов в каналах полевых транзисторов на основе AlGaN/AlN/GaN". Письма в журнал технической физики 43, № 16 (2017): 9. http://dx.doi.org/10.21883/pjtf.2017.16.44927.16727.

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Исследованы полевые транзисторы с высокой подвижностью электронов (HEMT) на основе AlGaN/AlN/GaN с разной длиной затвора Lg. Значения максимальных частот усиления по току fT и однонаправленного коэффициента усиления fmax составили 88 и 155 GHz для транзисторов с Lg =125 nm и 26 и 82 GHz для транзисторов с Lg = 360 nm соответственно. На основе измеренных S-параметров проведена экстракция значений элементов малосигнальных эквивалентных схем AlGaN/AlN/GaN HEMT и определена зависимость скорости инжекции vinj от напряжения затвор-исток. Также исследовано влияние длины затвора и напряжения между сто
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Shen, L., S. Heikman, B. Moran, et al. "AlGaN/AlN/GaN high-power microwave HEMT." IEEE Electron Device Letters 22, no. 10 (2001): 457–59. http://dx.doi.org/10.1109/55.954910.

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Dissertations / Theses on the topic "HEMT AlN"

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Lundskog, Anders. "Characterization of AlGaN HEMT structures." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9729.

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<p>During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electr
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Rajasingam, Srikaran. "Applications of Raman spectroscopy to AlxGa₁-xN technology : AlN substrates, high temperature annealing and HEMT devices." Thesis, University of Bristol, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407018.

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Said, Nasri. "Evaluation de la robustesse des technologies HEMTs GaN à barrière AlN ultrafine pour l'amplification de puissance au-delà de la bande Ka." Electronic Thesis or Diss., Bordeaux, 2024. http://www.theses.fr/2024BORD0425.

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La filière GaN est stratégique pour l'Union Européenne car elle permet d'améliorer la puissance et le rendement des systèmes radar et de télécommunication, notamment dans les bandes S à Ka (jusqu'à 30 GHz). Pour répondre aux besoins des futures applications, telles que la 5G et les systèmes militaires, le développement des technologies GaN vise à augmenter les fréquences jusqu'aux ondes millimétriques. Cela nécessite d'optimiser l'épitaxie et la réduction de la longueur de grille à moins de 150 nm, ainsi que l'utilisation de barrières ultrafines (&lt;10 nm) pour éviter les effets de canaux cou
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Bradley, Shawn Todd. "Investigation of AlGaN films and nickel/AlGaN Schottky diodes using depth-dependent cathodoluminescence spectroscopy and secondary ion mass spectrometry." Columbus, Ohio : Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1078329692.

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Thesis (Ph. D.)--Ohio State University, 2004.<br>Title from first page of PDF file. Document formatted into pages; contains xxii, 182 p.; also includes graphics (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 173-182).
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Taking, Sanna. "AlN/GaN MOS-HEMTs technology." Thesis, University of Glasgow, 2012. http://theses.gla.ac.uk/3356/.

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The ever increasing demand for higher power devices at higher frequencies has prompted much research recently into the aluminium nitride/gallium nitride high electron mobility transistors (AlN/GaN HEMTs) in response to theoretical predictions of higher performance devices. Despite having superior material properties such as higher two-dimensional electron gas (2DEG) densities and larger breakdown field as compared to the conventional aluminium gallium nitride (AlGaN)/GaN HEMTs, the AlN/GaN devices suffer from surface sensitivity, high leakage currents and high Ohmic contact resistances. Having
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Xiao, Xiao Mr. "Purification and Characterization of Rhodobacter sphaeroides Polyhistidine-tagged HemA and Comparison with Purified Polyhistidine-tagged HemT." Bowling Green State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1371650467.

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John, Dylan Boone. "Atomistic Modeling of AlN/GaN HEMTs for Applications in Harsh Environments." OpenSIUC, 2011. https://opensiuc.lib.siu.edu/theses/572.

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AlN/GaN high-electron mobility transistors (HEMT) are subject to internal structural and electrostatic fields originating mainly from: (i) the fundamental crystal atomicity and the interface discontinuity between dissimilar materials, (ii) atomistic strain, (iii) piezoelectricity, and (iv) spontaneous polarization (pyroelectricity). In this thesis, through numerical simulations, we have studied the origin and effects of these competing internal fields on the electrostatics and the I-V characteristic of scaled nitride HEMT structures. It is shown that strain in these devices is asymmetric and l
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Coulianos, Natalie N. G. "A comparison of ALA synthase gene transcription in three wild type strains of Rhodobacter sphaeroides." Bowling Green State University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1308169087.

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Tilstra, Liesbeth. "Grenzen aan het stakingsrecht : het Nederlandse rechtsoordeel over collectieve actie van werknemers getoetst aan het Europees Sociaal Handvest /." Deventer : Kluwer, 1994. http://www.gbv.de/dms/spk/sbb/recht/toc/272312207.pdf.

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Libkind, Marianna. "SiaA: A Heme Protein." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/chemistry_hontheses/2.

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The protein SiaA (Streptococcal iron acquisition) is involved in heme uptake in the bacterium Streptococcus pyogenes. It is difficult to obtain this protein in its fully holo form (completely loaded with heme). To increase the concentration of heme in the growing cell, we added ä-aminolevulinic acid (ALA) and ferrous sulfate (FeSO4), precursors of heme, to the growth media. Neither increasing the concentration of heme in vivo, nor growth at lower temperature for longer times, increased the production of holoprotein. The classical method of measuring the concentration of heme in a newly discove
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Books on the topic "HEMT AlN"

1

Bemis/Flaherty Collection of Gay Poetry, ed. All the heat we could carry: Poems. Main Street Rag Publishing Company, 2013.

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Børretzen, Odd. Helt all right: De beste tekstene i utvalg. 4th ed. Juritzen forlag, 2012.

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Javier, Valenzuela, Sixsmith Herbert, and United States. National Aeronautics and Space Administration., eds. All-metal compact, heat exchanger for space cryocoolers. Creare Inc., 1990.

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A, Valenzuela Javier, Sixsmith Herbert, and United States. National Aeronautics and Space Administration., eds. All-metal compact, heat exchanger for space cryocoolers. Creare Inc., 1990.

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Alba, Juanita. Calor: A story of warmth for all ages. WRS Pub., 1995.

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Office, Energy Efficiency. All electric, air-conditioned office uses heat pump technology. Department of the Environment, 1994.

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Aẍale, Rostem. Hemû rêgakan deçinewe Kurdistan: All roads lead to Kurdistan. Dezgay Çap u Biławkirdinewey Aras, 2011.

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Karen, Hunter, ed. Wendy's got the heat: [the queen of radio bares all]. Pocket Books, 2004.

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Giebels, Ludy. Jacob Israël de Haan in het Palestijnse labyrint, 1919-1924. Amsterdam University Press, 2024. http://dx.doi.org/10.5117/9789048563838.

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Jacob Israël de Haan was romanschrijver, dichter en jurist. In Nederland was hij bekend als schrijver van Pijpelijntjes (1904), een roman waarin openlijk homoseksualiteit werd beschreven. Hij bekeerde zich tot het zionisme en emigreerde in 1919 naar Palestina als correspondent voor het Algemeen Handelsblad. Zijn feuilletons schetsen een levendig beeld van de politieke situatie en het leven van alledag in het nieuwe Joods Nationaal Tehuis, dat zich dankzij de Balfour Declaratie in Palestina ontwikkelde. In Jeruzalem sloot hij zich echter al snel aan bij de anti- zionistische ultraorthodoxe geme
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Kraaijeveld, Jacques. Wat scheelt er aan?: Wat u altijd al over uw huisarts hebt willen weten, maar nooit hebt durven vragen. Novella, 1996.

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Book chapters on the topic "HEMT AlN"

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Verma, Yogesh Kumar, Varun Mishra, Rajan Singh, Trupti Ranjan Lenka, and Santosh Kumar Gupta. "Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design." In HEMT Technology and Applications. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_15.

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Das, Akash, Aishwarya Tomar, Subhankar Das, and Rahul Kumar. "AlN/β-Ga2O3 HEMT for Low-Noise Amplifier." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-5269-0_25.

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Singh, Rajan, Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen. "3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectronics." In HEMT Technology and Applications. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_7.

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Khan, Abdul Naim, S. N. Mishra, Meenakshi Chauhan, Kanjalochan Jena, and G. Chatterjee. "Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT." In HEMT Technology and Applications. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_3.

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Chauhan, Meenakshi, Abdul Naim Khan, Raghuvir Tomar, and Kanjalochan Jena. "Analog Performance of Normally-On Si3N4/AlN/β-Ga2O3 HEMT." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2308-1_8.

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Prasad, Santashraya, and A. Islam. "Influence of AlN Spacer Layer on SiN-Passivated AlGaN/GaN HEMT." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0412-9_20.

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Das, Shreyasi, Vandana Kumari, Mridula Gupta, and Manoj Saxena. "Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer." In Computers and Devices for Communication. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8366-7_68.

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Ranjan, Ravi, Nitesh Kashyap, and Ashish Raman. "Effect of AlN Spacer Layer on the Proposed MIS-AlGaN/GaN HEMT." In Lecture Notes in Electrical Engineering. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7031-5_106.

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Sufiyan, Nudrat, and Anup Kumar Sharma. "Analytical Modeling and Simulation Study of Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN HEMT Device." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6855-8_38.

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Alamgir, Imtiaz, and Aminur Rahman. "2D Simulation of Static Interface States in GaN HEMT with AlN/GaN Super-Lattice as Barrier Layer." In Proceedings of International Conference on Soft Computing Techniques and Engineering Application. Springer India, 2013. http://dx.doi.org/10.1007/978-81-322-1695-7_53.

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Conference papers on the topic "HEMT AlN"

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Jiang, Xiangle, Minhan Mi, Can Gong, Yuwei Zhou, Tianhao Liu, and Xiaohua Ma. "Simulation on AlN/GaN/AlN/GaN Planar HEMT and Fin-HEMT for Low-Voltage Applications." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835385.

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Bashkatov, Dmitriy D., Timur V. Malin, Vladimir G. Mansurov, Dmitry Yu Protasov, Denis S. Milakhin, and Konstantin S. Zhuravlev. "Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures." In 2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM). IEEE, 2024. http://dx.doi.org/10.1109/edm61683.2024.10615105.

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Huang, Mingzhi, Kai Liu, Chong Wang, and Ziheng Yu. "Study of p-GaN Gate HEMT with ALN Cap Layer." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835364.

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Namdeo, Eshaan, and Sukwinder Singh. "Substrate-Dependent Characteristics of AlGaN/AlN/GaN DH-HEMT: A Comprehensive Study." In 2024 International Conference on Electrical Electronics and Computing Technologies (ICEECT). IEEE, 2024. http://dx.doi.org/10.1109/iceect61758.2024.10739025.

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Haque, Sanaul, Cristina Andrei, Mihaela Wolf, Oliver Hilt, and Matthias Rudolph. "Switch Integrated Ka-Band Low Noise Amplifier in GaN/AlN HEMT Technology." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732731.

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Hidayat, Wagma, Muhammad Usman, Syeda Wageeha Shakir, et al. "Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED." In Fourth iiScience International Conference 2024: Recent Advances in Photonics and Physical Sciences, edited by M. Yasin A. Raja, Syed A. Haider, and Zohra N. Kayani. SPIE, 2024. https://doi.org/10.1117/12.3051934.

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Said, N., D. Saugnon, K. Harrouche, et al. "RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier: nonlinear model analysis." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732162.

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Song, Zeyu, Hanghai Du, Zhihong Liu, et al. "Strong Polarization AlN/GaN/Si Heterojunction MIS-HEMT for Mm-Wave Low-Voltage Terminal Applications." In 2024 IEEE International Conference on IC Design and Technology (ICICDT). IEEE, 2024. http://dx.doi.org/10.1109/icicdt63592.2024.10717668.

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Geng, Xiaomeng, Nick Wieczorek, Mihaela Wolf, Oliver Hilt, and Sibylle Dieckerhoff. "Modeling of a Novel GaN-on-AlN/SiC HEMT Including Thermal Effects for Circuit Simulation." In 2024 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2024. https://doi.org/10.1109/ecce55643.2024.10861295.

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Fouzi, Y., E. Morvan, Y. Gobil, et al. "Nonlinear Modeling of CMOS Compatible SiN/AlN/GaN MIS-HEMT on 200mm Si Operating at mm-Wave Frequencies." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732270.

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Reports on the topic "HEMT AlN"

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Xing, Huili, and Debdeep Jena. Stacked Quantum Wire AlN/GaN HEMTs. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada580523.

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Guérin, Laurence, Patrick Sins, Lida Klaver, and Juliette Walma van der Molen. Onderzoeksrapport Samen werken aan Bèta Burgerschap. Saxion, 2021. http://dx.doi.org/10.14261/ff0c6282-93e2-41a7-b60ab9bceb2a4328.

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In het TechYourfuture project ‘Samen werken aan Bèta Burgerschap’, dat plaats vond in de periode maart 2015 - maart 2020, gaven de onderzoekers samen met scholen en bedrijven concreet invulling aan burgerschapsonderwijs. De maatschappij en maatschappelijke vraagstukken worden steeds complexer. Politieke, technologische, economische, sociaal-culturele of ecologische aspecten van een vraagstuk zijn met elkaar verweven. Daarnaast spelen ook globale en lokale dimensies een rol. Er zijn alleen hierdoor al meerdere antwoorden mogelijk op een vraagstuk. Gedurende het project hebben basisschoolleerlin
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Veilleux, Richard, and David Levy. Potato Germplasm Development for Warm Climates. United States Department of Agriculture, 1992. http://dx.doi.org/10.32747/1992.7561057.bard.

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Complex potato hybrids derived from crosses between cv. Atlantic and 11 clones of three genomic compositions, all with an unadapted component from previously identified heat tolerant accessions, were evaluated in the field in Israel and Virginia and in controlled environments in Israel. Heat tolerance was exhibited in the field by the ability of many of these hybrids to tuberize under severe heat stress when cv. Atlantic did not tuberize at all. The complex hybrids also exhibited fewer internal defects (heat necrosis, hollow heart) than Atlantic. Studies to determine if heat stress applied dur
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4

Kasza, K. E. ANL ITER high-heat-flux blanket-module heat transfer experiments. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/7233786.

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Xing, Huili G., and Debdeep Jena. Ultrascaled AIN/GaN HEMT Technology for mm-wave RT Applications. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada538446.

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6

Blankestijn, Wouter, Walter Verspui, Jan Fliervoet, and Loes Witteveen. Rapport onderzoek Tuinverhalen. Lectoraat Communicatie, Participatie & Sociaal-Ecologisch Leren (CoPSEL), 2024. http://dx.doi.org/10.31715/2024.2.

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Tuinvergroening is een belangrijk onderdeel van de aanpak van (stedelijke) maatregelen tegen klimaatverandering en biodiversiteitsverlies. De achtertuin kan als het ware fungeren als een plek waar klimaatadaptie en natuurherstel op microniveau kan plaatsvinden. Ook al bestaan er veel interventiemethodes zoals groene tuintips en adviezen, is het belangrijk om deze te specificeren en tekoppelen aan de belevingswereld van verschillende tuinbezitters. Binnen het projectburgerwetenschappelijke participatieproject Pientere Tuinen rondom tuinvergroening is er de wens om een beter beeld te krijgen van
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Kasza, K. E. ANL ITER high-heat-flux blanket-module heat transfer experiments. Fusion Power Program. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/10161439.

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van Rooij, Sabine, Anouk Cormont, Nynke Lokhorst, et al. Training samen werken aan het bijenlandschap. Alterra Wageningen UR, 2020. http://dx.doi.org/10.18174/520308.

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9

Olson, Douglas A. Heat transfer in an aluminum heat exchanger using normal hydrogen gas:. National Institute of Standards and Technology, 1994. http://dx.doi.org/10.6028/nist.ir.3987.

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Henning, Brian, Kaitlan Ducken, Karli Honebein, Corrina Farho, and Ben Brown. Spokane Beat the Heat: Correlations of Urban Heat with Race and Income in Spokane, Washington. Center for Climate, Society, and the Environment, 2023. http://dx.doi.org/10.33972/ccse.2023.01.

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The Gonzaga Center for Climate, Society, and the Environment led a community effort to better understand how extreme heat affects different neighborhoods and different individuals by constructing maps of urban heat island and connecting them to demographic factors through a correlation analysis. This research reveals that extreme heat events affect not only the unhoused, but also many thousands of people across large segments of the Spokane community. Not all regions or demographics in Spokane are equally affected by extreme heat. Differences in green space and the built environment mean that
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