Relevant bibliographies by topics / HEMT / Dissertations / Theses
To see the other types of publications on this topic, follow the link: HEMT.

Dissertations / Theses on the topic 'HEMT'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 dissertations / theses for your research on the topic 'HEMT.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Bolt, Edward Lawrence. "5-aminolaevulinic acid synthase isozymes of Rhodobacter sphaeroides : cloning, expression of structural genes, purification and characterisation of E. coli." Thesis, Queen Mary, University of London, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.336440.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Khalil, Ibrahim. "Intermodulation distortion in GaN HEMT." Göttingen Cuvillier, 2009. http://d-nb.info/1000063275/04.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Lundskog, Anders. "Characterization of AlGaN HEMT structures." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9729.

Full text
Abstract:
<p>During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electr
APA, Harvard, Vancouver, ISO, and other styles
4

Sjue, Espen. "Modellering av HEMT Mikrobølge effekttransistor." Thesis, Norwegian University of Science and Technology, Department of Electronics and Telecommunications, 2006. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10311.

Full text
Abstract:
<p>Arbeidet med oppgaven gikk ut på å studere ulike kalibreringsmetoder for nettverksanalysator, utarbeidelse av testkort med kalibreringskomponenter. Målinger av DC- og AC-oppførselen til transistoren, for så å benytte programmet Agilent ADS og TOM-modellen til å lage en datamodell for denne transistoren. Det ble også utarbeidet en metode for hvordan man kan gå frem for å utarbeide en datamodell for en transistor. Arbeidet resulterte i en transistormodell som viste tilsynelatende gode egenskaper, og en metode for utarbeidelse av transistormodeller som fungerte godt for den utvalgte transistor
APA, Harvard, Vancouver, ISO, and other styles
5

Buchanan, Neil Bryans. "Phase locked millimetre wave HEMT oscillators." Thesis, Queen's University Belfast, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.322829.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Malik, Adil Mahmood. "Technology and physics of gate recessed GaN AlGaN FETs." [S.l. : s.n.], 2003. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-30157.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Aroshvili, Giorgi. "GaN HEMT and MMIC Design and Evaluation." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085.

Full text
Abstract:
<p>Gallium Nitride based devices due to their inherent material properties are considered as one of the most promising devices to realize high power, high frequency transistors with lower power consumption in next-generation applications. Although the technology has been studied since early 1970s, there is still a vast room and expectations in its yet unachieved findings. In present work the GaN technology is explored and state-of-the-art studies of GaN based HEMTs and their application in MMICs are presented. Different designs are presented and evaluated and the results are reported. In parti
APA, Harvard, Vancouver, ISO, and other styles
8

Navarrete, Moreno Francisco José. "Caracterización de Transistores Hemt en Banda Q." Tesis, Universidad de Chile, 2011. http://www.repositorio.uchile.cl/handle/2250/104301.

Full text
Abstract:
Este trabajo de título tiene como objetivo diseñar y construir un sistema de caracterización de transistores HEMT. Este sistema tiene como n determinar el comportamiento de transistores candidatos a ser utilizados en el diseño de ampli cadores de bajo ruido para receptores de antenas radioastronomicas que operen en Banda 1 del proyecto ALMA. Como parte de este sistema se diseñaron y construyeron dos módulos, un módulo Bias Tee y un sistema de calibración TRL. El módulo Bias Tee permite acoplar, por un mismo canal, la señal proveniente del VNA y la polarización para entregarlas al transistor
APA, Harvard, Vancouver, ISO, and other styles
9

Waldron, Niamh 1974. "InGaAs self-aligned HEMT for logic applications." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/44293.

Full text
Abstract:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.<br>Includes bibliographical references (p. 123-132).<br>As CMOS scaling approaches the end of the roadmap it has become a matter of great urgency to explore alternative options to conventional Si devices for logic applications. The high electron mobilities of III-V based compounds makes them an attractive option for use as a channel material. Of these materials, InGaAs offers the best balance between a mature technology and high mobility. InGaAs high electron mobility transistors
APA, Harvard, Vancouver, ISO, and other styles
10

Zhang, Guohao. "Optical control of millimetre-wave HEMT oscillators." Thesis, University of Leeds, 1996. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.755765.

Full text
APA, Harvard, Vancouver, ISO, and other styles
11

Astre, Guilhem. "Fiabilité des dispositifs HEMT en technologie GaN." Phd thesis, Toulouse 3, 2012. http://thesesups.ups-tlse.fr/1980/.

Full text
Abstract:
Le point sensible inhérent à la commercialisation d'une technologie émergente est la maturité des processus utilisés garantissant la qualité de l'épitaxie, de la métallisation du contact de grille ou encore de la passivation. Les études de fiabilité s'imposent alors comme un aspect indissociable de la maturation de la technologie. En ce sens, les composants à grands gap représentent un réel problème car les outils classiques de caractérisation ne sont pas toujours adaptés aux contraintes imposées (thermiques, RF, DC. . . ). Dans cette thèse, nous détaillons une technique originale pour amélior
APA, Harvard, Vancouver, ISO, and other styles
12

Astre, Guilhem. "Fiabilité des dispositifs HEMT en technologie GaN." Phd thesis, Université Paul Sabatier - Toulouse III, 2012. http://tel.archives-ouvertes.fr/tel-00767154.

Full text
Abstract:
Le point sensible inhérent à la commercialisation d'une technologie émergente est la maturité des processus utilisés garantissant la qualité de l'épitaxie, de la métallisation du contact de grille ou encore de la passivation. Les études de fiabilité s'imposent alors comme un aspect indissociable de la maturation de la technologie. En ce sens, les composants à grands gap représentent un réel problème car les outils classiques de caractérisation ne sont pas toujours adaptés aux contraintes imposées (thermiques, RF, DC...). Dans cette thèse, nous détaillons une technique originale pour améliorer
APA, Harvard, Vancouver, ISO, and other styles
13

Kaganjo, James Chege. "Purification and Characterization of Rhodobacter sphaeroides 2.4.1 HemT and Comparison with HemA Isoenzyme." Bowling Green State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1371650426.

Full text
APA, Harvard, Vancouver, ISO, and other styles
14

Cibie, Anthony. "Substrats innovants pour des composants de puissance à base de GaN." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAI014/document.

Full text
Abstract:
A l’heure actuelle, le marché de l’électronique de puissance est dominé par les composants silicium. Néanmoins, de nouveaux matériaux comme le nitrure de gallium ont émergé dans ce domaine grâce à leurs propriétés intéressantes. Ces nouveaux composants sont principalement réalisés sur des substrats silicium ce qui induit certaines problématiques lors de leur fabrication ou au niveau de leurs performances. Nous nous sommes intéressés dans cette thèse à des approches d’un point de vue du substrat dans l’objectif de résoudre ces problématiques. Ce travail a permis notamment de mettre en place une
APA, Harvard, Vancouver, ISO, and other styles
15

Gonçalves, Cristiano Ferreira. "GaN HEMT transistors characterization for non–linear modelling." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/21677.

Full text
Abstract:
Mestrado em Engenharia Eletrónica e Telecomunicações<br>Ultimamente, as redes de telecomunicações móveis estão a exigir cada vez maiores taxas de transferência de informação. Com este aumento, embora sejam usados códigos poderosos, também aumenta a largura de banda dos sinais a transmitir, bem como a sua frequência. A maior frequência de operação, bem como a procura por sistemas mais eficientes, tem exigido progressos no que toca aos transístores utilizados nos amplificadores de potência de radio frequência (RF), uma vez que estes são componentes dominantes no rendimento de uma estação base d
APA, Harvard, Vancouver, ISO, and other styles
16

Fontserè, Recuenco Abel. "Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization." Doctoral thesis, Universitat Politècnica de Catalunya, 2013. http://hdl.handle.net/10803/129098.

Full text
Abstract:
Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from
APA, Harvard, Vancouver, ISO, and other styles
17

Duff, Christopher Iain. "Tractable and scalable CAD model for filtronic HEMT devices." Thesis, University of Manchester, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.556620.

Full text
APA, Harvard, Vancouver, ISO, and other styles
18

Moran, David A. J. "Self-aligned short gate length III-V HEMT technology." Thesis, University of Glasgow, 2004. http://theses.gla.ac.uk/6577/.

Full text
Abstract:
This thesis presents a ne- approach to the fabrication of short gate length HI-V High Electron Mobility Transistors (HEMTs) that reduces the impact of external parasitic elements, and in particular access resistances, upon device performance. This was approached through the development of a self-aligned T-gate process with non-annealed ohmic contacts. The process was used to fabricate both GaAs pseudomorphic HEMT and subsequently lattice matched InP devices. In addition, a new selective recess etch was developed for cap layers containing indium. Characterisation of the self-aligned GaAs pHEMT
APA, Harvard, Vancouver, ISO, and other styles
19

Saini, Kanika. "Linearity Enhancement of High Power GaN HEMT Amplifier Circuits." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/94361.

Full text
Abstract:
Gallium Nitride (GaN) technology is capable of very high power levels but suffers from high non-linearity. With the advent of 5G technologies, high linearity is in greater demand due to complex modulation schemes and crowded RF (Radio Frequency) spectrum. Because of the non-linearity issue, GaN power amplifiers have to be operated at back-off input power levels. Operating at back-off reduces the efficiency of the power amplifier along-with the output power. This research presents a technique to linearize GaN amplifiers. The linearity can be improved by splitting a large device into multiple sm
APA, Harvard, Vancouver, ISO, and other styles
20

Liu, Zhengyang. "Characterization and Failure Mode Analysis of Cascode GaN HEMT." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/49580.

Full text
Abstract:
Recent emerging gallium nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques. Due to the advantages of the material, the GaN HEMT has a better figure of merit (FOM) compared to the state-of-the-art silicon (Si) power metal oxide silicon field effect transistor (MOSFET), which allows the GaN HEMT to switch with faster transition and lower switching loss. By applying the GaN HEMT in a circuit design, it is possible to achieve high frequency, high efficiency, and high density power conversion at the same time
APA, Harvard, Vancouver, ISO, and other styles
21

Cao, Menglin. "The development of silicon compatible processes for HEMT realisation." Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6803/.

Full text
Abstract:
Compound semiconductor (III-V) devices are crucially important in a range of RF/microwave applications. High Electron Mobility Transistors (HEMTs), as the best low noise high frequency compound semiconductor devices, have been utilised in various applications at microwave and mm-wave frequencies such as communications, imaging, sensing and power. However, silicon based manufacturing will always be the heart of the semiconductor industry. III-V devices are conventionally fabricated using gold-based metallisation and lift off processes, which are incompatible with silicon manufacturing processes
APA, Harvard, Vancouver, ISO, and other styles
22

Danesin, Francesca. "Stress, Overstress and Strain on AlGaN/GaN HEMT Devices." Doctoral thesis, Università degli studi di Padova, 2008. http://hdl.handle.net/11577/3425693.

Full text
Abstract:
Defence radar and wireless communication systems have a drastic need for increased rf performance for high power, high efficiency, high linearity and low-cost monolithic amplifiers operating in the 1-40 GHz frequency range. Semiconductor devices based on Silicon (Si) or Gallium Arsenide (GaAs) are currently used for the fabrication of communication systems but they are not able to deal with the continuous increase in demand for microwave power performances: those devices are very close to their limit, working with a poor efficiency and requiring large cooling systems. Therefore Gallium nitride
APA, Harvard, Vancouver, ISO, and other styles
23

Duran, Halit C. Duran Halit Celâleddin. "High performance InP-based HEMTs with dry etched gate recess /." [S.l.] : [s.n.], 1998. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12900.

Full text
APA, Harvard, Vancouver, ISO, and other styles
24

Neuburger, Martin. "Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung." [S.l. : s.n.], 2006. http://nbn-resolving.de/urn:nbn:de:bsz:289-vts-57224.

Full text
APA, Harvard, Vancouver, ISO, and other styles
25

Xiao, Xiao Mr. "Purification and Characterization of Rhodobacter sphaeroides Polyhistidine-tagged HemA and Comparison with Purified Polyhistidine-tagged HemT." Bowling Green State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1371650467.

Full text
APA, Harvard, Vancouver, ISO, and other styles
26

Someswaran, Preethi. "Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889.

Full text
APA, Harvard, Vancouver, ISO, and other styles
27

Sadek-Hage, Chehade Sawsan. "Microcapteurs hybrides et monolithiques en technologies MESFETet HEMT : applications cinémométriques." Lille 1, 1996. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/1996/50376-1996-133.pdf.

Full text
Abstract:
Les applications des microondes dans le domaine grand public, sont actuellement en pleine expansion particulièrement dans les transports terrestres. L'électronique automobile est un grand espace qui offre un champ d'opportunités et un marché potentiel. La voiture du futur sera équipée d'un ensemble de capteurs intelligents, permettant une conduite plus automatisée et plus sure. Notre objectif consiste à développer une source microonde en bande k d'un capteur sans contact utilisant l'effet doppler pour accéder à la vitesse des automobiles. Cette source est composée d'un oscillateur et d'un ampl
APA, Harvard, Vancouver, ISO, and other styles
28

Nie, Hanqing. "Analysis and Optimization of Parallel Gan Hemt for LLC Converters." Miami University / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=miami1627311347738337.

Full text
APA, Harvard, Vancouver, ISO, and other styles
29

Embar, Ramanujam Srinidhi. "Intermodulation distortion modelling and measurement techniques for GaN HEMT characterization." Kassel Kassel Univ. Press, 2008. http://d-nb.info/992643643/04.

Full text
APA, Harvard, Vancouver, ISO, and other styles
30

Taher, Mohammad Iktiham Bin. "New HEMT Type Sensors for In-situ Bio‐Geochemical Analysis." Electronic Thesis or Diss., Université de Lorraine, 2022. http://www.theses.fr/2022LORR0229.

Full text
Abstract:
Une nouvelle classe de capteurs de gaz innovants basée sur des transistors à haute mobilité électronique (HEMT) AlGaN/GaN a été développée pour les applications géologiques. Elle est conçue dans le but d'étudier le transfert de masse des gaz (H2, CO2, CH4, O2, H2S, SO2 et He) entre le sous-sol et l'atmosphère sur de grandes étendues géographiques. Pour cela, elle intègre les caractéristiques clé suivantes : la miniaturisation, la robustesse, l'insensibilité aux environnements difficiles associées à un coût contenu. Les étapes technologiques comme la conception des capteurs, les technologies de
APA, Harvard, Vancouver, ISO, and other styles
31

Manzoli, José Eduardo. "Efeito de campo em heteroestruturas semicondutoras de dispositivos eletrônicos quânticos." Universidade de São Paulo, 1998. http://www.teses.usp.br/teses/disponiveis/88/88131/tde-19082015-112652/.

Full text
Abstract:
Os efeitos do campo elétrico, que surgem pela aplicação de uma voltagem no contato Schottky, na estrutura eletrônica de heteroestruturas semicondutoras utilizadas nos recentes transistores de efeito de campo (FET) e numa super-rede finita são simulados numericamente. Estas heteroestruturas apresentam poços quânticos bidimensionais e camadas que podem estar tensionadas pela diferença entre os parâmetros de rede cristalinos. Através de um procedimento numérico auto-consistente várias grandezas físicas são estudadas, os auto-estados e as densidades eletrônicas nas sub-bandas são calculadas. A var
APA, Harvard, Vancouver, ISO, and other styles
32

Trovarello, Simone. "Selezione automatica di rettificatori a RF SIMO mediante autopolarizzazione di HEMT." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020. http://amslaurea.unibo.it/21835/.

Full text
Abstract:
Nella tesi viene proposto un sistema innovativo di Energy Harvesting per radiofrequenze a 2.45 GHz. Si tratta di un sistema single-input multiple-output ad ampissimo range dinamico di potenza in ingresso che sfrutta il fenomeno di autopolarizzazione di dispositivi non lineari come gli HEMT per selezionare autonomamente, e senza alcun controllo esterno, il ramo di rettificazione più adeguato al fine di ottenere la massima RF-to-DC conversion efficiency possibile. Inoltre il sistema garantisce il massimo isolamento fra i rami che compongono il circuito sfruttando l'ottimizzazione dei Large Signa
APA, Harvard, Vancouver, ISO, and other styles
33

Adeyemi, Oluwafemi Ibukunoluwa. "The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers." Thesis, Texas A&M University, 2006. http://hdl.handle.net/1969.1/4663.

Full text
Abstract:
The need of the everyday user to transfer large amounts of data is driving the need for larger data transfer capacity. Optical communication networks can satisfy this need. To be economically viable, optical transceivers must be integrated onto chips at low cost, using relatively cheap semiconductor processes. The optical preamplifier (transimpedance amplifier) receives optical information and converts it to a useful electrical form. It must operate at high speed, contribute little distortion to the input signal, and add little electrical noise to the incoming signal. This thesis investigates
APA, Harvard, Vancouver, ISO, and other styles
34

Meiners, Joseph R. "Simulation and design of a submicron gate-length AIHaN/GaN HEMT." Cincinnati, Ohio University of Cincinnati, 2007. http://www.ohiolink.edu/etd/view.cgi?ucin1177520581.

Full text
APA, Harvard, Vancouver, ISO, and other styles
35

Abbade, Marcelo Luís Francisco. "Caracterização óptica de uma estrutura tipo HEMT de GaAs/InGaAs/AlGaAs." [s.n.], 1996. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277776.

Full text
Abstract:
Orientador: Fernando Iikawa<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Watagin<br>Made available in DSpace on 2018-07-23T03:23:12Z (GMT). No. of bitstreams: 1 Abbade_MarceloLuisFrancisco_M.pdf: 953476 bytes, checksum: edf6ffafdcada1366617108564a3f2e8 (MD5) Previous issue date: 1997<br>Resumo: Realizamos um estudo das propriedades ópticas de uma estrutura tipo HEMT de um poço quântico de GaAs/InxGa1-xAs/AlyGa1-yAs com dopagem modulada. Neste estudo, utilizamos técnicas de medidas de espectroscopia de fotoluminescência, fotoluminescência de excitaç
APA, Harvard, Vancouver, ISO, and other styles
36

MEINERS, JOSEPH R. "SIMULATION AND DESIGN OF A SUBMICRON GATE-LENGTH AIGaN/GaN HEMT." University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1177520581.

Full text
APA, Harvard, Vancouver, ISO, and other styles
37

Langley, Derrick. "AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling." Wright State University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294.

Full text
APA, Harvard, Vancouver, ISO, and other styles
38

Coulianos, Natalie N. G. "Regulation of hemT expression in Rhodobacter sphaeroides wild type strain 2.4.9." Bowling Green State University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1522070574933425.

Full text
APA, Harvard, Vancouver, ISO, and other styles
39

Chiron, Lionel. "Couplage optimal d'une antenne IRM supraconductrice avec un transistor HEMT refroidi." Paris 11, 2003. http://www.theses.fr/2003PA112246.

Full text
Abstract:
En IRM la sensibilité du détecteur joue un rôle déterminant sur la résolution spatiale et temporelle accessible. Le circuit inductif du détecteur doit avoir un facteur de qualité (Q) élevé comme en IRM bas champ ou en microscopie RMN sur de petites régions anatomiques. L'adaptation du détecteur à un préamplificateur est alors difficile à réaliser sur la bande de fréquence nécessaire à la transmission du signal d'imagerie. Le chapitre 1 traite du couplage antenne-préamplificateur dans la littérature. Il existe une limite théorique en bande passante, dite limite de Fano. Il est montré que pour u
APA, Harvard, Vancouver, ISO, and other styles
40

Samnouni, Mohammed. "Fabrication et caractérisation du HEMT InP pour amplification faible bruit THz." Thesis, Lille 1, 2019. http://www.theses.fr/2019LIL1I103.

Full text
Abstract:
Les avancées des technologies III-V permettent aujourd’hui de concevoir des composants électroniques fonctionnant en gammes millimétrique et submillimétrique (fréquences Terahertz) pour répondre aux besoins émergeants du marché des télécommunications et de l’électronique à destination de différents secteurs industriels. L’électronique THz trouve des débouchées importantes dans les applications d’imagerie, entre autres pour la sécurité et les communications sans fils ultra haut débit (5G plus).La technologie des transistors HEMT InP a connu ces dernières années un progrès remarquable dans la ré
APA, Harvard, Vancouver, ISO, and other styles
41

Eliason, Garth W. "HEMT-compatible laser diodes." Thesis, 1994. http://hdl.handle.net/1957/35668.

Full text
APA, Harvard, Vancouver, ISO, and other styles
42

Liu, Cheng-Chih, and 劉政志. "The Fabrication and Analysis of High Frequency AlGaN/GaN HEMT and AlInN/GaN HEMT." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/64732834284178885341.

Full text
Abstract:
碩士<br>國立清華大學<br>電子工程研究所<br>101<br>In this thesis, we compare the DC and RF characteristics of AlGaN/GaN and AlInN/GaN HEMTs and their equivalent small signal signal circuit model are constructed and compared. For the DC characteristics the saturated current density(Idss) and the transconductance(Gm) of the AlInN/GaN HEMT is 1271mA/mm and 231mS/mm respectively which are higher than the AlGaN/GaN’s value 900mA/mm and 187mS/mm because of the higher 2DEG concentration in AlInN/GaN. But the leakage current of the AlInN/GaN HEMT is also higher than that of AlGaN/GaN HEMT. For high frequency characte
APA, Harvard, Vancouver, ISO, and other styles
43

Wang, Chieh-An, and 王婕安. "Electro-Thermal Simulation and Heat Dissipation Analysis of Packaged GaN Power-HEMT Devices." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/80245632143150963673.

Full text
Abstract:
碩士<br>國立交通大學<br>機械工程系所<br>103<br>AlGaN/GaN high electron mobility transistors（HEMTs）are one of the prospective candidates for high switching frequency power electronics applications thanks to its wide band gap（3.4eV）, high breakdown voltage, large critical electric field, high carrier mobility, and the inherent high speed characteristics. With the high power densities that AlGaN/GaN HEMTs are capable of reaching, heat dissipation is a crucial issue. This research presents an in depth thermal study of packaged GaN on Si power devices. The device is attached in a V-groove copper base, to enhance
APA, Harvard, Vancouver, ISO, and other styles
44

Chang, Ying-Tang, and 張英堂. "HEMT Frequency Multiplier and Filter Design." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/14201450872789658637.

Full text
Abstract:
碩士<br>國立臺灣大學<br>電信工程學研究所<br>89<br>This thesis describes the HEMT frequency multiplier design and filter design at millimeter-wave frequency. HEMT frequency multipliers include a monolithic 42-to-84 GHz doubler, a monolithic 14-to-42 GHz tripler, a monolithic 31-to-94 GHz balanced tripler, and a monolithic 19-to-76 GHz balanced quadrupler. Filters are designed for a local multi-point distributed service (LMDS) system. The 27.35~28.35 GHz filter is used at receiver-end and the 31~31.3 GHz filter is used at transmitter-end. For the millimeter-wave frequency band, monolithic microwav
APA, Harvard, Vancouver, ISO, and other styles
45

李奕辰. "Novel Light Emitting AlGaN/GaN HEMT." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/7efx9a.

Full text
APA, Harvard, Vancouver, ISO, and other styles
46

Tan, Kuang-Hsiung, and 談光雄. "Fabrication of enhancement-mode psedomorphic HEMT." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/18357416173665693874.

Full text
Abstract:
碩士<br>國防大學中正理工學院<br>電子工程研究所<br>95<br>Recently, the wireless area network (WLAN) becomes the public study topic of communication; especially the protocal 802.11a of wireless area network will be developed. There is high frequency, high power and linear related requirements in this communication protocol, but traditional metal-oxide-semiconductor field emitting transistor (MOSFET) by deep sub-micron technology can't reach those requirements, and hetro-junction field emitting transistor technology is still limited by negative-biased on gate in development of power amplifier. These is the results
APA, Harvard, Vancouver, ISO, and other styles
47

Lai, Sin-Hong, and 賴信宏. "Characteristic Analysis of SiN Gate Dielectric Layer MIS-HEMT Device and Investigation of MOS-HEMT Flash Memory." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/24505796689449958478.

Full text
Abstract:
碩士<br>龍華科技大學<br>電子工程系碩士班<br>103<br>Gallium nitride compared with other materials has the advantage with wide bandgap, high breakdown electric field and high electron saturation velocity, etc. Gallium nitride is a good material for high power, high frequency and optics applications. Metal semiconductor junction high electron mobility transistor can't effectively suppress gate leakage current in high bias due to its limited barrier height properties. Therefore, we adopt metal oxide semiconductor structure high electron mobility transistors to reduce gate leakage and surface states density. In th
APA, Harvard, Vancouver, ISO, and other styles
48

Liang, Hsien-Chang, and 梁獻章. "The Fabrication of High Power HEMT Device." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/40745393547051000391.

Full text
Abstract:
碩士<br>國立交通大學<br>電子物理系<br>86<br>In this study, we have developed the processing techniques for GaAs Power HEMT. The process starts with the three basic fabrication steps used in general FET processing. These include meas etch, obmic contact formation and gate formation. We have also successfully developed two specific process steps: electropalting and airbridge setting. In the process of electroplating, the thickness of Au can be controlled in the ranges from 2 μm and 12 μm maximum, and the boundary between the electroplated and unelectroplated areas is very sharp. From the airbridge proces
APA, Harvard, Vancouver, ISO, and other styles
49

Huang, Wei-Hsun, and 黃瑋珣. "GaN HEMT Modeling and Passive Mixer Design." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/81543692717494340013.

Full text
Abstract:
碩士<br>國立清華大學<br>電子工程研究所<br>100<br>本論文可分成兩部分討論，第一部分是氮化鎵高電子移導率電晶體模型的建立，包含小訊號及大訊號模型，第二部分提出了兩種不同的被動混頻器架構，包含基頻混頻器與次諧波混頻器。 在第一部分首先我們利用cold-FET量測來萃取出外部寄生的電阻和電感值，再利用Y參數將外部寄生的參數扣除掉之後，可以計算出內部等校電路的元件值。在本論文中採用Angelov的模型做為我們的電流模型，此模型中的各個參數可利用擬合的方式獲取，另外將內部元件值隨電壓變化的關係也用方程式擬合，最後在ADS中建立出完整的電晶體等效模型，並比較量測與模擬的直流特性與S參數。 在第5章中，我們提出一種寬頻高線性度的被動混頻器，此混頻器是利用第2和3章建立出的電晶體模型來設計，我們所採用的元件大小是2×100 μm，IF頻率固定在1 GHz，可得到頻率操作在11-18 GHz，轉換損耗最小為7.9 dB的被動混頻器，此混頻器的P1dB和IIP3為13和22 dBm。 在第六章中，我們提出另一種被動混頻器架構，此混頻器是利用穩懋半導體提供的0.15 μm pHEMT 元件設計並製作，此混頻器操作在11-21 GHz，擁有轉換損耗8.8-11.8 dB，其P1dB和IIP3為3和6 dBm。
APA, Harvard, Vancouver, ISO, and other styles
50

"Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface." Master's thesis, 2016. http://hdl.handle.net/2286/R.I.41224.

Full text
Abstract:
abstract: Gallium Nitride (GaN) based microelectronics technology is a fast growing and most exciting semiconductor technology in the fields of high power and high frequency electronics. Excellent electrical properties of GaN such as high carrier concentration and high carrier motility makes GaN based high electron mobility transistors (HEMTs) a preferred choice for RF applications. However, a very high temperature in the active region of the GaN HEMT leads to a significant degradation of the device performance by effecting carrier mobility and concentration. Thus, thermal management in GaN HE
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the bibliographies on the topic 'HEMT' for other source types:
Journal articles Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography