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Journal articles on the topic 'HEMT'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, et al. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment betw

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2

Jang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study." Micromachines 11, no. 1 (2019): 53. http://dx.doi.org/10.3390/mi11010053.

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlG

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3

Wang, Kaihong, Yidi Zhu, Hao Zhao, Ruixue Zhao, and Binxin Zhu. "Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices." Electronics 13, no. 2 (2024): 363. http://dx.doi.org/10.3390/electronics13020363.

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Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs’ characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs o

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4

Xu, K., H. Y. Wang, E. L. Chen, S. X. Sun, H. L. Wang, and H. Y. Mei. "Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect." Journal of Ovonic Research 20, no. 3 (2024): 395–403. http://dx.doi.org/10.15251/jor.2024.203.395.

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In order to promotion the RF performance, a grade In1-xGaxAs channel (G-HEMT) introduced to the AlGaAs/InGaAs HEMT. The G-HEMT with the grade In1-xGaxAs channel forms a deeper potential well and confines more electrons in the channel, results in improving the DC and RF characteristics. Moreover, because of the grade In1-xGaxAs is effectively reduced the peak electric field, and leads to a significant increase in breakdown voltage (BV). Moreover, the G-HEMT also increases resistance to single event effects (SEE). The simulation results indicate that the fmax is significantly increased to 889 GH

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5

Chen, Kevin J., and Chunhua Zhou. "Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology." physica status solidi (a) 208, no. 2 (2010): 434–38. http://dx.doi.org/10.1002/pssa.201000631.

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6

Du, Yilin. "An Investigation of Thermal Reliability Issues and Solution Strategies for GaN-HEMT Power Devices." Applied and Computational Engineering 141, no. 1 (2025): 81–88. https://doi.org/10.54254/2755-2721/2025.21687.

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This paper discusses the thermal reliability design of high electron mobility transistor (HEMT) power in gallium nitride (GaN) devices in depth. GaN HEMTs' exceptional performance in high-frequency, high-voltage, and high-power applications has garnered a lot of interest. However, a major element limiting long-term stability is now their problems with thermal reliability. This paper provides a detailed analysis of the thermal challenges faced by GaN-HEMT power devices, including the self-heating effect, uneven heat distribution, thermal stress, and thermal resistance, and discusses correspondi

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7

Filippov, I. A., V. A. Shakhnov, L. E. Velikovskiy, P. A. Brudnyi, and O. I. Demchenko. "InAlN/GaN hemt plasma etching." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 1 (2020): 84–87. http://dx.doi.org/10.17223/00213411/63/1/84.

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8

Shakkottai, Aarti, Stephany Kim, and Ron Mitchell. "0799 Impact of Highly Effective Modulator Therapy on Obstructive Sleep Apnea in People with Cystic Fibrosis." SLEEP 46, Supplement_1 (2023): A352. http://dx.doi.org/10.1093/sleep/zsad077.0799.

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Abstract Introduction Obstructive sleep apnea (OSA) is frequently seen in people with cystic fibrosis (PwCF). The presence of upper airway pathology including adenotonsillar hypertrophy and chronic sinusitis is a known risk factor for OSA in PwCF. The widespread use of highly effective modulator therapy (HEMT) such as elexacaftor/tezacaftor/ivacaftor has led to improvements in nutritional status, lung function, and sinus disease among PwCF. However, the impact of HEMT on OSA is still unknown. Methods We conducted a single center retrospective review of polysomnographic data in PwCF between 1/1

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9

Umeda, Tokuo, Yoshio Cho, and Akihiro Shibatomi. "Picosecond HEMT Pholodetector." Japanese Journal of Applied Physics 25, Part 2, No. 10 (1986): L801—L803. http://dx.doi.org/10.1143/jjap.25.l801.

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10

del Alamo, J. A., and J. Joh. "GaN HEMT reliability." Microelectronics Reliability 49, no. 9-11 (2009): 1200–1206. http://dx.doi.org/10.1016/j.microrel.2009.07.003.

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11

Li, Zijian. "Advancements in GaN HEMT structures and applications: A comprehensive overview." Journal of Physics: Conference Series 2786, no. 1 (2024): 012003. http://dx.doi.org/10.1088/1742-6596/2786/1/012003.

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Abstract Compared with silicon, GaN has advantages such as high electron mobility large band gap and high breakdown field strength. Therefore, GaN High Electron Mobility Transistors (HEMT) is resistant to high voltage and high temperature, and GaN HEMT performs well in high-frequency and high-power fields. Enhancement mode GaN HEMT is more suitable for most applications than depletion mode GaN HEMT due to enhancement mode GaN HEMT’s normally-off characteristic. This paper introduces cascode structure GaN HEMT and p-GaN gate structure GaN HEMT, as well as two improved structures, monolithically

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12

Guo, Han, Wu Tang, Wei Zhou, and Chi Ming Li. "Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT." Applied Mechanics and Materials 217-219 (November 2012): 2393–96. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.2393.

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The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the

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13

Соловьев, А. А. "МЕТОДИКА ИЗМЕРЕНИЯ ХАРАКТЕРИСТИК И ПОСТРОЕНИЕ МОДЕЛИ СВЧ ПОЛЕВОГО ТРАНЗИСТОРА С ИСПОЛЬЗОВАНИЕМ САПР KEYSIGHT EESOF". NANOINDUSTRY Russia 96, № 3s (2020): 708–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.708.711.

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Рассмотрен процесс формирования SPICE-модели HEMT-транзисторов с помощью комплекса Keysight EEsof. Определен минимальный набор параметров модели, выполнено сравнение используемых в настоящем моделей HEMT-транзисторов. The paper discusses the procedure for building SPICE models of HEMT transistors using Keysight EEsof systems. The minimum set of model parameters has been defined; the existing models of HEMT transistors have been compared.

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14

Wu, Yanlin, Junjie Yang, Jingjing Yu, et al. "Analysis of On-Resistance in 650-V Enhancement-Mode Active-Passivation p-GaN Gate HEMT." ECS Journal of Solid State Science and Technology 13, no. 11 (2024): 115002. http://dx.doi.org/10.1149/2162-8777/ad905b.

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This work investigates the resistance distribution of the E-mode GaN-on-Si active-passivation (AP) p-GaN gate high-electron-mobility transistor (HEMT) using the transfer length method (TLM). The AP-HEMT has a unique active-passivation layer that is electrically connected to the p-GaN gate and covers most area of the device. The active-passivation layer changes the way the 2DEG is generated in the device, so the constitution of the device R ON is expected to differ from the conventional p-GaN gate HEMT (Conv-HEMT). According to our study, the sheet resistance of the 2DEG under the active-passiv

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15

Hamida, Djelti. "Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor." International Journal of Electrical and Computer Engineering (IJECE) 12, no. 3 (2022): 2655–62. https://doi.org/10.11591/ijece.v12i3.pp2655-2662.

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In this work, we examine the direct-current (DC) behavior and the radio frequency (RF) performance of both single-gate simple-channel (SGSC), single-gate double-channel (SGDC) and double-gate double-channel (DGDC) AlGaN/GaN/BGaN high electron mobility transistor (HEMT) with BGaN back-barriers consist of 250 nm gate length. Using technology computer aided design (TCAD) Silvaco, our isothermal simulation results reveal that the proposed structure of double-gate double-channel HEMT with BGaN back-barriers (DGDCBB HEMT) increases electron concentration and consequently the saturation drain current

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16

Liang, Yanan, Rui Chen, Jianwei Han, Xuan Wang, Qian Chen, and Han Yang. "The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure." Electronics 10, no. 4 (2021): 440. http://dx.doi.org/10.3390/electronics10040440.

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An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Theref

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17

Chen, Chia Lin, Chih Huan Fang, Yuan Chao Niu, and Yaow Ming Chen. "Impact of Parasitic Capacitor to the GaN HEMT Devices." Applied Mechanics and Materials 764-765 (May 2015): 515–20. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.515.

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The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spik

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18

Wang, Hongyue, Chao Yuan, Yajie Xin, et al. "Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy." Micromachines 13, no. 3 (2022): 466. http://dx.doi.org/10.3390/mi13030466.

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In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region. It was found that the thermal resistance (Rth) of the p-GaN HEMT device increased with the increase of channel temperature. The Rth dependence on the temperature was well approximated by a function of Rth~Ta (a = 0.2). The three phonon Umklapp scattering, point mass defects and dislocations scattering mechanisms are suggested contributors to t

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19

Abe, Masayuki. "III. Ultrahigh-Speed HEMT SRAM Technology." IEEJ Transactions on Electronics, Information and Systems 113, no. 9 (1993): 654–59. http://dx.doi.org/10.1541/ieejeiss1987.113.9_654.

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20

Xiong, Juan, Xintong Xie, Jie Wei, Shuxiang Sun, and Xiaorong Luo. "Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer." Micromachines 15, no. 9 (2024): 1158. http://dx.doi.org/10.3390/mi15091158.

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In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming the degradation of other characteristics. The device operation mechanism and characteristics are investigated by TCAD simulation. The results show that the peak electric field and impact ionization at the gate edges are reduced in the PN-HEMT due to the introduced P-GaN buried layer in the buffer layer. This leads to a decrease in the peak drain

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21

Djelti, Hamida. "Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor." International Journal of Electrical and Computer Engineering (IJECE) 12, no. 3 (2022): 2655. http://dx.doi.org/10.11591/ijece.v12i3.pp2655-2662.

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<p><span>In this work, we examine the direct-current (DC) behavior and the radio-frequency (RF) performance of both single-gate simple-channel (SGSC), single-gate double-channel (SGDC) and double-gate double-channel (DGDC) AlGaN/GaN/BGaN high electron mobility transistor (HEMT) with BGaN back-barriers consist of 250 nm gate length. Using Technologie Computer Aided Design (TCAD) Silvaco, our isothermal simulation results reveal that the proposed structure of double-gate double-channel HEMT with BGaN back-barriers (DGDCBB HEMT) increases electron concentration and consequently the sa

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22

Su, Shuo, Yanrong Cao, Weiwei Zhang, et al. "Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices." Micromachines 16, no. 7 (2025): 729. https://doi.org/10.3390/mi16070729.

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A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state. The reliability of GaN HEMT power devices affects the safe operation of the entire power electronic system and seriously threatens the stability of the equipment. Therefore, it is particularly important to study the damage mechanism of GaN HEMT power devices under high field conditions. This work studies the degradation of Cascode GaN HEMT power devices under off-state high-field stress and analyzes the related damage mechanism. It is fou

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23

Fay, P., C. Caneau, and I. Adesida. "High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers." IEEE Transactions on Microwave Theory and Techniques 50, no. 1 (2002): 62–67. http://dx.doi.org/10.1109/22.981247.

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24

Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, et al. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (2021): 727. http://dx.doi.org/10.3390/membranes11100727.

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A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEM

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25

Guminov, Nikolay V., Min Thant Myo, V. A. Romanyuk, and Daler P. Shomakhmadov. "Comparison of GaAs and GaN HEMT Characteristics." Proceedings of Universities. Electronics 24, no. 1 (2019): 42–50. http://dx.doi.org/10.24151/1561-5405-2019-24-1-42-50.

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26

Wang, Pengfei, Minhan Mi, Meng Zhang, et al. "High linearity AlGaN/GaN HEMT with double-V _th coupling for millimeter-wave applications." Chinese Physics B 31, no. 2 (2022): 027103. http://dx.doi.org/10.1088/1674-1056/ac2b21.

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We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-V th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (V th) values including the slant recess element and planar element in parallel along the gate width with N2O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (G m) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7

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27

Zhen, Zixin, Chun Feng, Hongling Xiao, Lijuan Jiang, and Wei Li. "Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs." Micromachines 15, no. 9 (2024): 1091. http://dx.doi.org/10.3390/mi15091091.

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A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper. Combining the higher displacement threshold energy of Al2O3 with the better surface passivation of the SiNx layer, the bilayer dielectrics MIS-HEMT presents much smaller degradation of structural materials and of device electrical performance after proton irradiation. Firstly, the least of the defects caused by irradiation suggesting the smallest structural

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Wang, Rui-Rong, Hao Guo, Jun Tang, Jin-Ping Liu, and Li-Shuang Liu. "Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT." Micromachines 12, no. 11 (2021): 1413. http://dx.doi.org/10.3390/mi12111413.

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A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force-sensitivity characteristic of the QD HEMT is studied by the electrical and mechanical properties. The electrical characteristics show that the InAs QD-HEMT has linear, cut-off, and saturation operating states, and produces different output currents under different gate voltages, which shows that th

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29

Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain

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30

Mat Hussin, Mohd Rofei, Sharaifah Kamariah Wan Sabli, Mohd Faizol Abdullah, et al. "Development of 2DNM Heat Spreaders and GaN HEMT Technology for Advanced Power Electronic Applications." Materials Science Forum 1055 (March 4, 2022): 155–60. http://dx.doi.org/10.4028/p-baxta7.

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Advanced power electronic application normally requires high-speed semiconductor switches in a compact design that are capable to transform electrical energy between the sources and the loads with high efficiency. In electronics, inefficiency is a waste that also translated into unnecessarily high costs and limits the device performance. As the number of connected devices increases in modern applications, more efficient power conversion is necessary especially for advanced power electronic systems. Therefore, in this research, on-chip thermal management is designed to improve the power convers

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31

Qin, Yingshuo, Changchun Chai, Fuxing Li, Qishuai Liang, Han Wu, and Yintang Yang. "Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT." Micromachines 13, no. 1 (2022): 106. http://dx.doi.org/10.3390/mi13010106.

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The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field streng

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32

XU, HONGTAO, CHRISTOPHER SANABRIA, ALESSANDRO CHINI, et al. "A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 810–15. http://dx.doi.org/10.1142/s0129156404002879.

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Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.

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33

Chaudhary, Sumit, Pawan Kumar, Md Arif Khan, Amitesh Kumar, and Shaibal Mukherjee. "Impact of MgO spacer layer on microwave performance of MgZnO/ZnO HEMT." Engineering Research Express 4, no. 2 (2022): 025007. http://dx.doi.org/10.1088/2631-8695/ac6280.

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Abstract This article analyzes the direct current and small-signal parameters of MgZnO/ZnO (MZO) HEMT for microwave application. Further, the impact of the MgO spacer layer on the microwave performance parameters such as transconductance (g m), cut-off frequency (f T), maximum oscillation frequency (f max) and Johnson’s figures of merit (J-FOM) of MZO HEMT has been analyzed. MZO HEMT with MgO spacer results in the enhanced values of two-dimensional electron gas (2DEG) density of 7.2 × 1013 cm−2 and g m of 91 mS mm−1. The values of f T and f max exhibit 3-fold enhancement to 5.57 GHz and to 7.8

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34

Wang, Zeheng, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, and Yuanzhe Yao. "Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench." Applied Sciences 9, no. 15 (2019): 3054. http://dx.doi.org/10.3390/app9153054.

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In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulatio

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35

Haziq, Muhaimin, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, and Mohd Syamsul. "Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review." Micromachines 13, no. 12 (2022): 2133. http://dx.doi.org/10.3390/mi13122133.

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The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief intr

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36

Тарасова, E. A., C. B. Оболенский, O. E. Галкин, A. B. Хананова та А. Б. Макаров. "Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия". Физика и техника полупроводников 51, № 11 (2017): 1543. http://dx.doi.org/10.21883/ftp.2017.11.45108.22.

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Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4&#183;1014 cм-2. Описаны результаты физико-топологического моделирования HEMT AlGaN/GaN на подложке SiC. Определена погрешность расчета параметров GaN-HEMT, обусловленная погрешностью вычисления профиля распределения электронов. DOI: 10.21883/FTP.2017.11.45108.22

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37

Geng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer." Electronics 7, no. 12 (2018): 416. http://dx.doi.org/10.3390/electronics7120416.

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Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current den

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38

Zhu, Shunwei, Hujun Jia, Tao Li, et al. "Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer." Micromachines 10, no. 7 (2019): 444. http://dx.doi.org/10.3390/mi10070444.

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A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdo

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39

Yang, Chao, Jiayun Xiong, Jie Wei, Junfeng Wu, Bo Zhang, and Xiaorong Luo. "High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment." Advances in Condensed Matter Physics 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/267680.

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A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F−treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT). First, the F−in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field) between the gate and drain by the assisted depletion effect but also reduces theE-field peak at the gate end, leading to a higher breakdown voltag

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40

Yadala, Gowthami, Balaji Bukya, and Srinivasa Rao Karumuri. "Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor." International Journal of Electrical and Computer Engineering (IJECE) 13, no. 4 (2023): 3788–95. https://doi.org/10.11591/ijece.v13i4.pp3788-3795.

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Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The dependency on DC characteristics and radio frequency characteristics due to GaN cap layers, multi gate (FG and BG), and high K dielectric material is established. Further compared single gate (SG) passivated HEMT, double gate (DG) passivated HEMT, double gate triple (DGT) tooth passivated HEMT, high K dielectric front Pi gate (FG) and back Pi gate (BG) HEMT. It is observed that there is an increased drain current (Ion)

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41

Tokuda, Hirokuni. "VII. Millimeter-Wave HEMT." IEEJ Transactions on Electronics, Information and Systems 116, no. 5 (1996): 512–14. http://dx.doi.org/10.1541/ieejeiss1987.116.5_512.

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Wu, C. J., M. Schneider, K. Alavi, and E. Kohn. "Narrow Recess HEMT Technology." Journal of The Electrochemical Society 134, no. 10 (1987): 2613–16. http://dx.doi.org/10.1149/1.2100253.

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Berenz, J., K. Nakano, Ting-Ih Hsu, and J. Goel. "HEMT 60 GHz amplifier." Electronics Letters 21, no. 22 (1985): 1028. http://dx.doi.org/10.1049/el:19850729.

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Komiak, J. J. "Wideband HEMT balanced amplifier." Electronics Letters 22, no. 14 (1986): 747. http://dx.doi.org/10.1049/el:19860514.

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Paoloni, C. "HEMT-HBT matrix amplifier." IEEE Transactions on Microwave Theory and Techniques 48, no. 8 (2000): 1308–12. http://dx.doi.org/10.1109/22.859474.

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Aina, O., M. Serio, M. Mattingly, and E. Hempfling. "Novel AlInAs/InP HEMT." Electronics Letters 26, no. 10 (1990): 651–52. http://dx.doi.org/10.1049/el:19900426.

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Szweda, Roy. "Growing the HEMT family." III-Vs Review 18, no. 9 (2005): 56. http://dx.doi.org/10.1016/s0961-1290(05)71421-6.

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Szweda, Roy. "HEMT materials and devices." III-Vs Review 16, no. 3 (2003): 36–39. http://dx.doi.org/10.1016/s0961-1290(03)80279-x.

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Abe, Masayuki. "Deep-submicron HEMT technology." Microelectronics Journal 24, no. 8 (1993): 741–53. http://dx.doi.org/10.1016/0026-2692(93)90074-o.

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Fatma M. Mahmoud. "GaN-HEMT Performance Enhancement." Journal of Electrical Systems 20, no. 2 (2024): 1426–35. http://dx.doi.org/10.52783/jes.1442.

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In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented. Device simulations have been done using Sentaurus technology computer-aided design (TCAD). The simulations and analysis show better drain current, transconductance, and cut-off frequency performance. The maximum cut-off frequency shown by the proposed HEMT d

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