Journal articles: 'HEMT'

1

Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, and Chun-Hsiung Lin. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (February 23, 2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the “thermal cross-talk” effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.

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Jang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study." Micromachines 11, no. 1 (December 31, 2019): 53. http://dx.doi.org/10.3390/mi11010053.

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.

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Wang, Kaihong, Yidi Zhu, Hao Zhao, Ruixue Zhao, and Binxin Zhu. "Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices." Electronics 13, no. 2 (January 15, 2024): 363. http://dx.doi.org/10.3390/electronics13020363.

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Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs’ characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs of GaN HEMT, the variation rules of the saturation voltage with low current injection, threshold voltage, and body-like diode voltage drop with temperature are investigated. The influences on the three TSEPs’ characteristics are considered, and their stability is discussed. Through experimental comparison, it is found that the saturation voltage with low current injection retains favorable temperature-sensitive characteristics, which has potential application value in junction temperature measurement. However, the threshold voltage as a TSEP for certain GaN HEMT is not ideal in terms of linearity and stability.

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4

Chen, Kevin J., and Chunhua Zhou. "Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology." physica status solidi (a) 208, no. 2 (October 18, 2010): 434–38. http://dx.doi.org/10.1002/pssa.201000631.

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Filippov, I. A., V. A. Shakhnov, L. E. Velikovskiy, P. A. Brudnyi, and O. I. Demchenko. "InAlN/GaN hemt plasma etching." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 1 (2020): 84–87. http://dx.doi.org/10.17223/00213411/63/1/84.

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Xu, K., H. Y. Wang, E. L. Chen, S. X. Sun, H. L. Wang, and H. Y. Mei. "Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect." Journal of Ovonic Research 20, no. 3 (2024): 395–403. http://dx.doi.org/10.15251/jor.2024.203.395.

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In order to promotion the RF performance, a grade In1-xGaxAs channel (G-HEMT) introduced to the AlGaAs/InGaAs HEMT. The G-HEMT with the grade In1-xGaxAs channel forms a deeper potential well and confines more electrons in the channel, results in improving the DC and RF characteristics. Moreover, because of the grade In1-xGaxAs is effectively reduced the peak electric field, and leads to a significant increase in breakdown voltage (BV). Moreover, the G-HEMT also increases resistance to single event effects (SEE). The simulation results indicate that the fmax is significantly increased to 889 GHz of G-HEMT from 616 GHz of conventional AlGaAs/InGaAs HEMT (C-HEMT). The the fT is significantly increased to 521 GHz of G-HEMT from 326 GHz of C-HEMT, as well as the IDsat is increased by 64.8% and the BV increases by 37%. In addition, the SEE peak drain current of G-HEMT is dramatically reduced 51%.

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Umeda, Tokuo, Yoshio Cho, and Akihiro Shibatomi. "Picosecond HEMT Pholodetector." Japanese Journal of Applied Physics 25, Part 2, No. 10 (October 20, 1986): L801—L803. http://dx.doi.org/10.1143/jjap.25.l801.

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8

del Alamo, J. A., and J. Joh. "GaN HEMT reliability." Microelectronics Reliability 49, no. 9-11 (September 2009): 1200–1206. http://dx.doi.org/10.1016/j.microrel.2009.07.003.

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9

Shakkottai, Aarti, Stephany Kim, and Ron Mitchell. "0799 Impact of Highly Effective Modulator Therapy on Obstructive Sleep Apnea in People with Cystic Fibrosis." SLEEP 46, Supplement_1 (May 1, 2023): A352. http://dx.doi.org/10.1093/sleep/zsad077.0799.

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Abstract Introduction Obstructive sleep apnea (OSA) is frequently seen in people with cystic fibrosis (PwCF). The presence of upper airway pathology including adenotonsillar hypertrophy and chronic sinusitis is a known risk factor for OSA in PwCF. The widespread use of highly effective modulator therapy (HEMT) such as elexacaftor/tezacaftor/ivacaftor has led to improvements in nutritional status, lung function, and sinus disease among PwCF. However, the impact of HEMT on OSA is still unknown. Methods We conducted a single center retrospective review of polysomnographic data in PwCF between 1/1/2009-10/31/2022. Results Fifty-three children with CF had undergone diagnostic polysomnography during the study period. Twenty-eight (53%) patients had OSA. Frequency of OSA did not differ by race or mutation type (p>0.5). Eighteen (34%) patients were on HEMT at the time of polysomnography. Mean ages of PwCF in the post-HEMT vs pre-HEMT were 11.6±5.4(sd) vs 6.4±3.5 years respectively, p=0.001. Mean body mass index percentile was 70.8±27.4 vs 55.8±31.2 respectively, p=0.09. Mean forced expiratory volume in 1 second as a percent predicted was 97.1±22.5 vs 87.0±20.9 respectively, p=0.2. Frequency of OSA was 67% in the post-HEMT group and 46% in the pre-HEMT group (p=0.1). Snoring was present in 91% of PwCF in the pre-HEMT group and 78% of those in the post-HEMT group (p=0.2). Frequency of mouth breathing was 77% and 56% in the pre-HEMT and post-HEMT groups respectively (p=0.1). Large adenoids were present in 37% of PwCF in the pre-HEMT group as compared to 11% of those in the post-HEMT group (p=0.046). Frequency of large tonsils in the pre-HEMT and post-HEMT groups was 43% vs. 28% (p=0.3). There were no differences in frequency of chronic sinusitis between the groups (p=0.7). Conclusion Frequency of OSA among PwCF continues to be high even in the post-HEMT era. PwCF on HEMT showed a trend towards more frequent OSA despite having less upper airway pathology. The better nutritional status afforded by HEMT could be contributing to the high frequency of OSA in this population. Larger studies are needed to formally test this hypothesis. Support (if any)

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10

Li, Zijian. "Advancements in GaN HEMT structures and applications: A comprehensive overview." Journal of Physics: Conference Series 2786, no. 1 (June 1, 2024): 012003. http://dx.doi.org/10.1088/1742-6596/2786/1/012003.

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Abstract Compared with silicon, GaN has advantages such as high electron mobility large band gap and high breakdown field strength. Therefore, GaN High Electron Mobility Transistors (HEMT) is resistant to high voltage and high temperature, and GaN HEMT performs well in high-frequency and high-power fields. Enhancement mode GaN HEMT is more suitable for most applications than depletion mode GaN HEMT due to enhancement mode GaN HEMT’s normally-off characteristic. This paper introduces cascode structure GaN HEMT and p-GaN gate structure GaN HEMT, as well as two improved structures, monolithically integrated Si-GaN cascoded FET and Hybrid Drain embedded Gate Injection Transistor, then compares the four structures and analyzes the advantages and disadvantages. Because of the unique advantages of GaN HEMT, many industries that require the use of high-frequency devices or high-power devices are very interested in the application research of GaN HEMT. This paper mainly introduces the research progress of GaN HEMT’s application in the three fields of radio frequency amplifiers, charger circuits, and LiDAR drivers, and the paper summarizes the advantages and current challenges of GaN HEMT, as well as the future of GaN HEMT’s development and application.

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11

Abe, Masayuki. "III. Ultrahigh-Speed HEMT SRAM Technology." IEEJ Transactions on Electronics, Information and Systems 113, no. 9 (1993): 654–59. http://dx.doi.org/10.1541/ieejeiss1987.113.9_654.

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12

Guo, Han, Wu Tang, Wei Zhou, and Chi Ming Li. "Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT." Applied Mechanics and Materials 217-219 (November 2012): 2393–96. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.2393.

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The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

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Fay, P., C. Caneau, and I. Adesida. "High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers." IEEE Transactions on Microwave Theory and Techniques 50, no. 1 (2002): 62–67. http://dx.doi.org/10.1109/22.981247.

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14

Соловьев, А. А. "МЕТОДИКА ИЗМЕРЕНИЯ ХАРАКТЕРИСТИК И ПОСТРОЕНИЕ МОДЕЛИ СВЧ ПОЛЕВОГО ТРАНЗИСТОРА С ИСПОЛЬЗОВАНИЕМ САПР KEYSIGHT EESOF." NANOINDUSTRY Russia 96, no. 3s (June 15, 2020): 708–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.708.711.

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Рассмотрен процесс формирования SPICE-модели HEMT-транзисторов с помощью комплекса Keysight EEsof. Определен минимальный набор параметров модели, выполнено сравнение используемых в настоящем моделей HEMT-транзисторов. The paper discusses the procedure for building SPICE models of HEMT transistors using Keysight EEsof systems. The minimum set of model parameters has been defined; the existing models of HEMT transistors have been compared.

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Guminov, Nikolay V., Min Thant Myo, V. A. Romanyuk, and Daler P. Shomakhmadov. "Comparison of GaAs and GaN HEMT Characteristics." Proceedings of Universities. Electronics 24, no. 1 (February 2019): 42–50. http://dx.doi.org/10.24151/1561-5405-2019-24-1-42-50.

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Liang, Yanan, Rui Chen, Jianwei Han, Xuan Wang, Qian Chen, and Han Yang. "The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure." Electronics 10, no. 4 (February 10, 2021): 440. http://dx.doi.org/10.3390/electronics10040440.

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An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

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Wang, Hongyue, Chao Yuan, Yajie Xin, Yijun Shi, Yaozong Zhong, Yun Huang, and Guoguang Lu. "Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy." Micromachines 13, no. 3 (March 18, 2022): 466. http://dx.doi.org/10.3390/mi13030466.

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In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region. It was found that the thermal resistance (Rth) of the p-GaN HEMT device increased with the increase of channel temperature. The Rth dependence on the temperature was well approximated by a function of Rth~Ta (a = 0.2). The three phonon Umklapp scattering, point mass defects and dislocations scattering mechanisms are suggested contributors to the heat transfer process for the p-GaN HEMT. The impact of bias conditions and gate length on the thermal characteristics of the device was investigated. The behaviour of temperature increasing in the time domain with 50 µs pulse width and different drain bias voltage was analysed. Finally, a field plate structure was demonstrated for improving the device thermal performance.

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Chen, Chia Lin, Chih Huan Fang, Yuan Chao Niu, and Yaow Ming Chen. "Impact of Parasitic Capacitor to the GaN HEMT Devices." Applied Mechanics and Materials 764-765 (May 2015): 515–20. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.515.

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The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spike and damage the GaN HEMT.

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Djelti, Hamida. "Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor." International Journal of Electrical and Computer Engineering (IJECE) 12, no. 3 (June 1, 2022): 2655. http://dx.doi.org/10.11591/ijece.v12i3.pp2655-2662.

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<p><span>In this work, we examine the direct-current (DC) behavior and the radio-frequency (RF) performance of both single-gate simple-channel (SGSC), single-gate double-channel (SGDC) and double-gate double-channel (DGDC) AlGaN/GaN/BGaN high electron mobility transistor (HEMT) with BGaN back-barriers consist of 250 nm gate length. Using Technologie Computer Aided Design (TCAD) Silvaco, our isothermal simulation results reveal that the proposed structure of double-gate double-channel HEMT with BGaN back-barriers (DGDCBB HEMT) increases electron concentration and consequently the saturation drain current, breakdown voltage, the transconductance. On the other hand, decreases the gate leakage current compared to a conventional HEMT and to a double-channel HEMT back-barriers. Furthermore, the proposed double-gate double-channel back-barrier HEMT device shows good cutoff frequency (94 GHz) and a maximum oscillation frequency (170 GHz). These results suggest that double-gate double channel HEMT back-barriers could be useful for high-frequency and high-power microwave applications.</span></p>

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Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, and Feng-Tso Chien. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (September 23, 2021): 727. http://dx.doi.org/10.3390/membranes11100727.

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A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.

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Tokuda, Hirokuni. "VII. Millimeter-Wave HEMT." IEEJ Transactions on Electronics, Information and Systems 116, no. 5 (1996): 512–14. http://dx.doi.org/10.1541/ieejeiss1987.116.5_512.

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Wang, Pengfei, Minhan Mi, Meng Zhang, Jiejie Zhu, Yuwei Zhou, Jielong Liu, Sijia Liu, et al. "High linearity AlGaN/GaN HEMT with double-V _th coupling for millimeter-wave applications." Chinese Physics B 31, no. 2 (January 1, 2022): 027103. http://dx.doi.org/10.1088/1674-1056/ac2b21.

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We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-V th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (V th) values including the slant recess element and planar element in parallel along the gate width with N2O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (G m) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7 V, which yields a flattened f T/f max-gate bias dependence. At the operating frequency of 30 GHz, the peak power-added efficiency (PAE) of 41% accompanied by the power density (P out) of 5.3 W/mm. Furthermore, the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P 1 dB) of 28 dBm, whereas that of the Fin-like HEMT is 25.2 dBm. The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.

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Zhen, Zixin, Chun Feng, Hongling Xiao, Lijuan Jiang, and Wei Li. "Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs." Micromachines 15, no. 9 (August 29, 2024): 1091. http://dx.doi.org/10.3390/mi15091091.

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A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper. Combining the higher displacement threshold energy of Al2O3 with the better surface passivation of the SiNx layer, the bilayer dielectrics MIS-HEMT presents much smaller degradation of structural materials and of device electrical performance after proton irradiation. Firstly, the least of the defects caused by irradiation suggesting the smallest structural material degradation is observed in the bilayer dielectrics MIS-HEMT through simulations. Then, DC and RF electrical performance of four kinds of devices before and after proton irradiation are studied through simulation and experiments. The smallest threshold voltage degradation rate, the smallest maximum on-current degradation and Gm degradation, the largest cut-off frequency, and the lowest cut-off frequency degradation are found in the bilayer dielectrics MIS-HEMT among four kinds of devices. The degradation results of both structural materials and electrical performance reveal that the bilayer dielectrics MIS-HEMT performs best after irradiation and had better radiation resilience.

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Wu, C. J., M. Schneider, K. Alavi, and E. Kohn. "Narrow Recess HEMT Technology." Journal of The Electrochemical Society 134, no. 10 (October 1, 1987): 2613–16. http://dx.doi.org/10.1149/1.2100253.

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Berenz, J., K. Nakano, Ting-Ih Hsu, and J. Goel. "HEMT 60 GHz amplifier." Electronics Letters 21, no. 22 (1985): 1028. http://dx.doi.org/10.1049/el:19850729.

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Komiak, J. J. "Wideband HEMT balanced amplifier." Electronics Letters 22, no. 14 (1986): 747. http://dx.doi.org/10.1049/el:19860514.

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Paoloni, C. "HEMT-HBT matrix amplifier." IEEE Transactions on Microwave Theory and Techniques 48, no. 8 (2000): 1308–12. http://dx.doi.org/10.1109/22.859474.

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Aina, O., M. Serio, M. Mattingly, and E. Hempfling. "Novel AlInAs/InP HEMT." Electronics Letters 26, no. 10 (May 1, 1990): 651–52. http://dx.doi.org/10.1049/el:19900426.

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Szweda, Roy. "Growing the HEMT family." III-Vs Review 18, no. 9 (December 2005): 56. http://dx.doi.org/10.1016/s0961-1290(05)71421-6.

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Szweda, Roy. "HEMT materials and devices." III-Vs Review 16, no. 3 (April 2003): 36–39. http://dx.doi.org/10.1016/s0961-1290(03)80279-x.

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Abe, Masayuki. "Deep-submicron HEMT technology." Microelectronics Journal 24, no. 8 (December 1993): 741–53. http://dx.doi.org/10.1016/0026-2692(93)90074-o.

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Fatma M. Mahmoud. "GaN-HEMT Performance Enhancement." Journal of Electrical Systems 20, no. 2 (April 4, 2024): 1426–35. http://dx.doi.org/10.52783/jes.1442.

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In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented. Device simulations have been done using Sentaurus technology computer-aided design (TCAD). The simulations and analysis show better drain current, transconductance, and cut-off frequency performance. The maximum cut-off frequency shown by the proposed HEMT device is 45.7 GHz at 100-nm gate length. Good transcoductance has been obtained by scaling down the gate length of the device, which is ascribed to the present two-dimensional electron gas (2DEG) density that supports upgrading the output current. Higher drain current is achieved without using acceptor-like traps in the Al2O3/AlGaN interface. Results show that the Al2O3/AlGaN/GaN-based MOSHEMT is a promising device for high-frequency and power electronic applications.

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di Forte Poisson, M. A., M. Magis, M. Tordjman, J. Di Persio, R. Langer, L. Toth, B. Pecz, et al. "GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application." Journal of Crystal Growth 310, no. 23 (November 2008): 5232–36. http://dx.doi.org/10.1016/j.jcrysgro.2008.08.035.

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Wang, Rui-Rong, Hao Guo, Jun Tang, Jin-Ping Liu, and Li-Shuang Liu. "Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT." Micromachines 12, no. 11 (November 18, 2021): 1413. http://dx.doi.org/10.3390/mi12111413.

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A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force-sensitivity characteristic of the QD HEMT is studied by the electrical and mechanical properties. The electrical characteristics show that the InAs QD-HEMT has linear, cut-off, and saturation operating states, and produces different output currents under different gate voltages, which shows that the structure is reasonable. Furthermore, the results of the output characteristics under different pressure show that the output voltage of the QD-HEMT decreases with the increase in pressure, which indicates that the InAs QD-HEMT has a vital mechanical–electrical coupling characteristic. The output voltage of the InAs QD-HEMT in the range of 0–100 kPa shows that the sensitivity was 1.09 mV/kPa.

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Mat Hussin, Mohd Rofei, Sharaifah Kamariah Wan Sabli, Mohd Faizol Abdullah, Muhamad Amri Ismail, Azlina Mohd Zain, Mohd Saifol Nizam Mohd Yusof, and Fadzilah Arifin. "Development of 2DNM Heat Spreaders and GaN HEMT Technology for Advanced Power Electronic Applications." Materials Science Forum 1055 (March 4, 2022): 155–60. http://dx.doi.org/10.4028/p-baxta7.

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Advanced power electronic application normally requires high-speed semiconductor switches in a compact design that are capable to transform electrical energy between the sources and the loads with high efficiency. In electronics, inefficiency is a waste that also translated into unnecessarily high costs and limits the device performance. As the number of connected devices increases in modern applications, more efficient power conversion is necessary especially for advanced power electronic systems. Therefore, in this research, on-chip thermal management is designed to improve the power conversion efficiency of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Since the inefficiency in the electronic component is always referred to as losses in the form of heat, proper thermal management is needed to improve the device performance. As nanotechnology promise to be the foundation of the next industrial revolution, the research towards nanoenhanced semiconductor devices has aroused widespread attention from researchers, scientists and engineers. In this research, two-dimensional nanomaterials (2DNMs) are used as heat spreaders to reduce the localized hot spot temperature in GaN HEMT for higher device efficiency. The fabrication process flow, process issues, process characterization, material characterization and thermal performance of the nanomaterial heat spreader are the main topics to be discussed in this paper. Based on the experiment the monolayer graphene can improve the thermal resistance by at least 0.5 K/W. This may help to improve the GaN HEMT device efficiency especially when the device is operated under high power density.

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Guan, Wuxiao. "Advancements and trends in GaN HEMT." Applied and Computational Engineering 23, no. 1 (November 7, 2023): 245–51. http://dx.doi.org/10.54254/2755-2721/23/20230662.

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Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) technology has made significant advancements, revolutionizing the field of power electronics. With their unique properties such as high breakdown voltage, high frequency, and high electron mobility and high-power capabilities, GaN HEMTs offer significant advantages over traditional silicon-based devices, such as improved power density, higher operating temperature, and enhanced reliability. GaN HEMTs have shown great potential in sensing applications, such as gas and biosensors. This thesis explores the advancements and trends in GaN HEMT technology, including crystal growth technology, sensing applications, packaging technology, and performance optimization. Despite significant progress, challenges such as heat dissipation, production costs, and yield and reliability issues need to be addressed. Future research directions may focus on improving integration with other technologies, exploring potential applications in emerging fields such as 5G communication, and addressing these challenges. Overall, GaN HEMT technology has made significant advancements and is set to play a pivotal role in various industries.

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Qin, Yingshuo, Changchun Chai, Fuxing Li, Qishuai Liang, Han Wu, and Yintang Yang. "Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT." Micromachines 13, no. 1 (January 9, 2022): 106. http://dx.doi.org/10.3390/mi13010106.

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The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.

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Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

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Chaudhary, Sumit, Pawan Kumar, Md Arif Khan, Amitesh Kumar, and Shaibal Mukherjee. "Impact of MgO spacer layer on microwave performance of MgZnO/ZnO HEMT." Engineering Research Express 4, no. 2 (April 11, 2022): 025007. http://dx.doi.org/10.1088/2631-8695/ac6280.

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Abstract This article analyzes the direct current and small-signal parameters of MgZnO/ZnO (MZO) HEMT for microwave application. Further, the impact of the MgO spacer layer on the microwave performance parameters such as transconductance (g m), cut-off frequency (f T), maximum oscillation frequency (f max) and Johnson’s figures of merit (J-FOM) of MZO HEMT has been analyzed. MZO HEMT with MgO spacer results in the enhanced values of two-dimensional electron gas (2DEG) density of 7.2 × 1013 cm−2 and g m of 91 mS mm−1. The values of f T and f max exhibit 3-fold enhancement to 5.57 GHz and to 7.8 GHz, respectively, and J-FOM is increased by 2.93 times with the introduction of MgO spacer layer in HEMT structure. Moreover, the impact of MgO spacer is studied on the off-state breakdown mechanism of MZO HEMT. The off-state breakdown voltage (V br) of MZO HEMT is ∼25 V higher than that for MZO HEMT with an MgO layer. Therefore, there is a trade-off between the microwave performance and the device off-state breakdown voltage. This work is significant for the development of large-area and cost-effective ZnO-based HEMTs for microwave applications.

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XU, HONGTAO, CHRISTOPHER SANABRIA, ALESSANDRO CHINI, YUN WEI, STEN HEIKMAN, STACIA KELLER, UMESH K. MISHRA, and ROBERT A. YORK. "A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 810–15. http://dx.doi.org/10.1142/s0129156404002879.

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Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.

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Wang, Zeheng, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, and Yuanzhe Yao. "Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench." Applied Sciences 9, no. 15 (July 29, 2019): 3054. http://dx.doi.org/10.3390/app9153054.

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In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT.

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Haziq, Muhaimin, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, and Mohd Syamsul. "Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review." Micromachines 13, no. 12 (December 1, 2022): 2133. http://dx.doi.org/10.3390/mi13122133.

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The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device’s performance are addressed.

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Тарасова, E. A., C. B. Оболенский, O. E. Галкин, A. B. Хананова, and А. Б. Макаров. "Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия." Физика и техника полупроводников 51, no. 11 (2017): 1543. http://dx.doi.org/10.21883/ftp.2017.11.45108.22.

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Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4·1014 cм-2. Описаны результаты физико-топологического моделирования HEMT AlGaN/GaN на подложке SiC. Определена погрешность расчета параметров GaN-HEMT, обусловленная погрешностью вычисления профиля распределения электронов. DOI: 10.21883/FTP.2017.11.45108.22

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Geng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer." Electronics 7, no. 12 (December 10, 2018): 416. http://dx.doi.org/10.3390/electronics7120416.

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Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.

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Zhu, Shunwei, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, and Yintang Yang. "Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer." Micromachines 10, no. 7 (July 2, 2019): 444. http://dx.doi.org/10.3390/mi10070444.

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A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT.

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Yang, Chao, Jiayun Xiong, Jie Wei, Junfeng Wu, Bo Zhang, and Xiaorong Luo. "High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment." Advances in Condensed Matter Physics 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/267680.

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A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F−treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT). First, the F−in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field) between the gate and drain by the assisted depletion effect but also reduces theE-field peak at the gate end, leading to a higher breakdown voltage (BV). Second, in the AlGaN channel region, the F−region realizes the E-mode and the region without F−maintains a high drain current (ID). Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F−treatment in whole channel (FC-MIS-HEMT), SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat) by 28%.

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Koehler, Andrew D., Travis J. Anderson, Marko J. Tadjer, Tatyana I. Feygelson, Jennifer K. Hite, Karl D. Hobart, Bradford B. Pate, Francis J. Kub, and Charles R. Eddy. "Topside Nanocrystalline Diamond Integration on AlGaN/GaN HEMTs for High Temperature Operation." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 1–6. http://dx.doi.org/10.4071/hitec-tp17.

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GaN high electron mobility transistors (HEMTs) performance is limited by increased channel temperature, particularly resulting from self-heating during high power operation. Topside nanocrystalline diamond (NCD) layers have been integrated on AlGaN/GaN (HEMTs) to improve thermal management. HEMTs with NCD heat-spreading layers exhibit a 20% decrease in peak channel temperature compared to reference HEMTs, measured by Raman thermography, as well as improved sheet carrier density, transconductance, sheet resistance, Hall mobility, on-state resistance, and breakdown voltage. A “gate after diamond” approach is implemented to improve the thermal budget of the deposition process while maintaining the integrity of the Schottky gate electrode in a scalable process. Processing improvements for integrating NCD-capping with the HEMT are being pursued, such as eliminating the SiNx passivation interlayer, such that the NCD film is directly on the AlGaN barrier, as well as a sacrificial gate process. Also, boron doped p+-NCD films were implemented as gate electrodes for the AlGaN/GaN HEMT to place the heat-spreading layer in direct contact with the heat source, for a thermally stable heat-spreading gate contact.

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Mahrokh, M., Hongyu Yu, and Yuejin Guo. "Thermal Modeling of GaN HEMT Devices With Diamond Heat-Spreader." IEEE Journal of the Electron Devices Society 8 (2020): 986–91. http://dx.doi.org/10.1109/jeds.2020.3023081.

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Wang, Chih Hao, Liang Yu Su, Finella Lee, and Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices." Applied Mechanics and Materials 764-765 (May 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.

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We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

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Lai, Wen-Cheng, and Sheng-Lyang Jang. "An X-Band GaN HEMT Oscillator with Four-Path Inductors." Applied Computational Electromagnetics Society 35, no. 9 (November 4, 2020): 1059–63. http://dx.doi.org/10.47037/2020.aces.j.350912.

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An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.

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Journal articles on the topic 'HEMT'

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