Books on the topic 'HEMTs'
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Khandelwal, Sourabh. Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-77730-2.
Full text1954-, Golio John Michael, ed. Microwave MESFETs and HEMTs. Boston: Artech House, 1991.
Find full textFazal, Ali, and Gupta Aditya Kumar 1952-, eds. HEMTs and HBTs: Devices, fabrication, and circuits. Boston: Artech House, 1991.
Find full textTerry, J. G. Pseudomorphic HEMTs: The role of the ohmic contact. Manchester: UMIST, 1994.
Find full textAnholt, Robert. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs. Boston: Artech House, 1995.
Find full textDuran, Halit C. High performance InP-based HEMTs with dry etched gate recess. Konstanz: Hartung-Gorre Verlag, 1998.
Find full textFreeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2003.
Find full textKoester, Ardis W. Hems. [Corvallis, Or.]: Oregon State University Extension Service, 1993.
Find full textTsanin, M. Herts Grosbard. Tel-Aviv: Farlag--Di mi un der onshṭreng fun M. Tsanin, 1995.
Find full textTsanin, M. Herts Grosbard. Tel-Aviv: Farlag--Di mi un der onshṭreng fun M. Tsanin, 1995.
Find full textTANDAN, MADHU. HEMIS: A novel. [Place of publication not identified]: HARPERCOLLINS INDIA, 2018.
Find full textMenem), Argentina President (1989 :. Hemos cambiado la historia. [Buenos Aires, Argentina]: Presidencia de la Nación, Secretaría de Medios de Comunicación, 1994.
Find full textManuel, Vázquez Montalbán, and Gómez Carrizo P, eds. Lo que hemos comido. Barcelona: Destino, 1997.
Find full textMeneses, Enrique. Hasta aquí hemos llegado. La Coruña [Spain]: Ediciones del Viento, 2006.
Find full textGeorge Philip & Son. and Ordnance Survey, eds. County street atlas Herts. 2nd ed. Southampton: Ordnance Survey, 1990.
Find full textR, Buch Robert, Kashiwagi Takashi, and National Institute of Standards and Technology (U.S.), eds. Gasification of silicone fluids under external thermal radiation. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.
Find full textG, Johnson Kerry, ed. Physics Quest: Spectra heats up. [College Park, MD]: American Physical Society, 2012.
Find full textBifet, Juan Esquerda. Te hemos seguido: Espiritualidad sacerdotal. 2nd ed. Madrid: Biblioteca de Autores Cristianos, 1988.
Find full textKalra, Ravinder, and Khanchen Tswang Rigzin. Hemis Museum: (Sku-rten Khang). Leh-Ladakh: Hemis Monastery, 2015.
Find full textLenka, Trupti Ranjan, and Hieu Pham Trung Nguyen, eds. HEMT Technology and Applications. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-2165-0.
Full textBhoumik, Moumita. Electrical Characteristics of Mesfets and Hemts. GRIN Verlag GmbH, 2013.
Find full textSchefer, Matthias. Integrated coplanar millimeter wave circuits using inP HEMTs. 1997.
Find full textFlores, Jaime Alberto Zamudio. Device Characterization and Modeling of Large-Size GaN HEMTs. Kassel University Press GmbH, 2012.
Find full textFundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. New York: Wiley, 1999.
Find full textZürich, Eidgenössische Technische Hochschule, ed. High performance InP-based HEMTs with dry etched gate recess. 1998.
Find full text2-D Modeling of GaN HEMTS Incorporating the Piezoelectric Effect. Storming Media, 2001.
Find full textLiu, William. Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 2008.
Find full textLiu, William. Fundamentals of III-V Devices, Solutions Manual: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 1999.
Find full textPreface), Fazal Ali (Editor, and Aditya Gupta (Preface), eds. HEMTs and HBTs: Devices, Fabrication, and Circuits (Artech House Antennas and Propagation Library). Artech House Publishers, 1991.
Find full textNational Aeronautics and Space Administration (NASA) Staff. Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts). Independently Published, 2018.
Find full textAdvanced SPICE Model for GaN HEMTs: A New Industry-Standard Compact Model for GaN-Based Power and RF Circuit Design. Springer International Publishing AG, 2022.
Find full textKhandelwal, Sourabh. Advance SPICE Model for GaN HEMTs: A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design. Springer International Publishing AG, 2021.
Find full textRogers, Donald W. Heats of Hydrogenation. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/6208.
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