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1

Khandelwal, Sourabh. Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-77730-2.

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2

1954-, Golio John Michael, ed. Microwave MESFETs and HEMTs. Boston: Artech House, 1991.

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3

Ladbrooke, Peter H. MMIC design: GaAs FETs and HEMTs. Ann Arbor: UMI, 1998.

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4

Ladbrooke, Peter H. MMIC design: GaAs FETS and HEMTs. Boston: Artech House, 1989.

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5

Fazal, Ali, and Gupta Aditya Kumar 1952-, eds. HEMTs and HBTs: Devices, fabrication, and circuits. Boston: Artech House, 1991.

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6

Terry, J. G. Pseudomorphic HEMTs: The role of the ohmic contact. Manchester: UMIST, 1994.

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7

Anholt, Robert. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs. Boston: Artech House, 1995.

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8

Duran, Halit C. High performance InP-based HEMTs with dry etched gate recess. Konstanz: Hartung-Gorre Verlag, 1998.

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9

Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2003.

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10

Koester, Ardis W. Hems. [Corvallis, Or.]: Oregon State University Extension Service, 1993.

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11

Floyd-Miller, Cherryl. Exquisite heats. Cambridge: Salt Publishing, 2008.

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12

Tsanin, M. Herts Grosbard. Tel-Aviv: Farlag--Di mi un der onshṭreng fun M. Tsanin, 1995.

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13

East, John. Educating Herts. [U.K.]: Twentieth Century Society, 1993.

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14

Tsanin, M. Herts Grosbard. Tel-Aviv: Farlag--Di mi un der onshṭreng fun M. Tsanin, 1995.

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15

(Firm), Bartholomew. Herts & Bucks: [map]. Edinburgh: Bartholomew, 1988.

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16

TANDAN, MADHU. HEMIS: A novel. [Place of publication not identified]: HARPERCOLLINS INDIA, 2018.

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17

Menem), Argentina President (1989 :. Hemos cambiado la historia. [Buenos Aires, Argentina]: Presidencia de la Nación, Secretaría de Medios de Comunicación, 1994.

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18

Uribe, Willy. Los que hemos amado. Barcelona: Libros del Lince, 2011.

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19

Manuel, Vázquez Montalbán, and Gómez Carrizo P, eds. Lo que hemos comido. Barcelona: Destino, 1997.

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20

Meneses, Enrique. Hasta aquí hemos llegado. La Coruña [Spain]: Ediciones del Viento, 2006.

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21

George Philip & Son. and Ordnance Survey, eds. County street atlas Herts. 2nd ed. Southampton: Ordnance Survey, 1990.

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22

Alabau, Magaly. Hemos llegado a Ilion. Madrid: Betania, 1992.

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23

Campos, Marco Antonio. Hemos perdido el reino. México: J. Mortiz, 1987.

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24

R, Buch Robert, Kashiwagi Takashi, and National Institute of Standards and Technology (U.S.), eds. Gasification of silicone fluids under external thermal radiation. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.

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25

Tébar, Juan. Las cosas que hemos visto. Madrid: Nickel Odeon, 1993.

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26

G, Johnson Kerry, ed. Physics Quest: Spectra heats up. [College Park, MD]: American Physical Society, 2012.

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27

Bifet, Juan Esquerda. Te hemos seguido: Espiritualidad sacerdotal. 2nd ed. Madrid: Biblioteca de Autores Cristianos, 1988.

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28

Christensen, James J. Handbook of heats of mixing. New York: Wiley, 1988.

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29

Majer, Vladimír. Heats of vaporization of fluids. Amsterdam: Elsevier, 1989.

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30

Kalra, Ravinder, and Khanchen Tswang Rigzin. Hemis Museum: (Sku-rten Khang). Leh-Ladakh: Hemis Monastery, 2015.

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31

Lenka, Trupti Ranjan, and Hieu Pham Trung Nguyen, eds. HEMT Technology and Applications. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-2165-0.

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32

Nonlinear Design: FETs and HEMTs. Artech House, 2022.

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33

Bhoumik, Moumita. Electrical Characteristics of Mesfets and Hemts. GRIN Verlag GmbH, 2013.

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34

Schefer, Matthias. Integrated coplanar millimeter wave circuits using inP HEMTs. 1997.

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35

Flores, Jaime Alberto Zamudio. Device Characterization and Modeling of Large-Size GaN HEMTs. Kassel University Press GmbH, 2012.

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36

Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. New York: Wiley, 1999.

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37

Zürich, Eidgenössische Technische Hochschule, ed. High performance InP-based HEMTs with dry etched gate recess. 1998.

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38

2-D Modeling of GaN HEMTS Incorporating the Piezoelectric Effect. Storming Media, 2001.

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39

Liu, William. Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 2008.

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40

Liu, William. Fundamentals of III-V Devices, Solutions Manual: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 1999.

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41

Preface), Fazal Ali (Editor, and Aditya Gupta (Preface), eds. HEMTs and HBTs: Devices, Fabrication, and Circuits (Artech House Antennas and Propagation Library). Artech House Publishers, 1991.

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42

National Aeronautics and Space Administration (NASA) Staff. Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts). Independently Published, 2018.

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43

Advanced SPICE Model for GaN HEMTs: A New Industry-Standard Compact Model for GaN-Based Power and RF Circuit Design. Springer International Publishing AG, 2022.

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44

Khandelwal, Sourabh. Advance SPICE Model for GaN HEMTs: A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design. Springer International Publishing AG, 2021.

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45

Herts. Hamlyn, 1993.

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46

Gedalyah, ʻAmi. Rosh hets. Karta, 1987.

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47

Rogers, Donald W. Heats of Hydrogenation. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/6208.

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48

¿Ya hemos llegado? Círculo de Lectores, 2008.

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49

Nos hemos divorciado. Libros y Publicaciones Periódicas 1984, 1988.

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50

Yu, Janet. Five Blue Heats. Amazon, 2023.

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