Relevant bibliographies by topics / Heterojunction bipolar transistor (HBT’s)

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'Heterojunction bipolar transistor (HBT’s)'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Heterojunction bipolar transistor (HBT’s)"

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Li, Li, and Hong Xia Liu. "Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance." Advanced Materials Research 317-319 (August 2011): 1183–86. http://dx.doi.org/10.4028/www.scientific.net/amr.317-319.1183.

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SiGe heterojunction structure much improves the performance of PnP HBT (heterojunction bipolar transistor), which focus on the impact of Ge component distribution in the base on the current gain and characteristic frequency . The triangular distribution in the base, including zero-doping and non-zero-doping at the starting point, will form a Ge-gradient acceleration filed for the minority carriers in the base to reduce the base transport time and increase current density and working frequency. Extend Ge to the collector region to eliminate the effect of the valence band spike barrier at the collector junction, further improving the performance of the pnp HBT. By the simulations and optimizations in this paper, the and of pnp SiGe HBT improves evidently, and the results can be referenced in the design of SiGe devices and circuits.
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WASHIO, KATSUYOSHI. "SELF-ALIGNED Si BJT/SiGe HBT TECHNOLOGY AND ITS APPLICATION TO HIGH-SPEED CIRCUITS." International Journal of High Speed Electronics and Systems 11, no. 01 (March 2001): 77–114. http://dx.doi.org/10.1142/s0129156401000794.

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In a Si bipolar transistor (BJT) and a SiGe heterojunction bipolar transistor (HBT), self-aligned structures help to improve high-speed and high-frequency characteristics. These structures are used to reduce parasitic capacitance and resistance, and thus maximize the transistor's intrinsic performance. In addition to generally used process technology, selective metal deposition to form electrodes and selective epitaxial growth of Si/SiGe multilayers are applied in the fabrication process. To improve the intrinsic speed, the cutoff frequency, a shallow diffusion process for Si BJTs and a graded-Ge profile SiGe-base layer for SiGe HBTs are used. These also enable a high maximum oscillation frequency and a small gate delay in the emitter-coupled logic through the synergistic effect of the self-aligned structure. Both high-speed digital circuits — frequency dividers up to millimeter-wave bands and a multiplexer/demultiplexer for optical-fiber-links — and high-frequency analog circuits for optical-fiber-links — a preamplifier, an automatic gain control amplifier. a limiting amplifier, and a decision circuit — have been implemented by applying the self-aligned Si BJTs and/or SiGe HBTs.
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Urteaga, M., S. Krishnan, D. Scott, Y. Wei, M. Dahlstrom, S. Lee, and M. J. W. Rodwell. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (June 2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate transfer process. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained record 21 dB unilateral power gain at 100 GHz. Recently-fabricated devices have shown unbounded unilateral power gain from 40-110 GHz, and fmax cannot be extrapolated from measuremente. However, these devices exhibited high power gains at 220 GHz, the frequency limit of presently available microwave network analyzers. Demonstrated amplifier ICs in the technology include reactively tuned amplifiers at 175 GHz, lumped and distributed amplifiers with bandwidths to 85 GHz, and W-band power amplifiers.
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Yang, Jing Wei, and Meng Meng Xu. "Failure Model Research of Power HBTs." Advanced Materials Research 926-930 (May 2014): 1348–51. http://dx.doi.org/10.4028/www.scientific.net/amr.926-930.1348.

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Heterojunction bipolar transistors (HBTs) are playing an important role in microwave and power applications. When HBTs operated at high power, the power dissipation and self-heating effects will enable the generation of electrical properties in the transistor failure. The failure experiment system of microwave power HBTs was established. Based on this system, the changes of electrical parameters of HBTs in deferent stress, such as Gummel plots, base current various different base-emitter voltage and base-collector voltage, were measured and analyzed. At the same time, the failure of base current of SiGe HBTs under the condition of FC, SC and thermal stress are studied respectively. It was found that ΔIBis the sensitive parameter of electrical and thermal stress. Based on this reason, we presented the failure model of IB. This model could explain the experiment phenomenon successfully, which is very important and useful for applications of microwave power analog IC’s.
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Ouchrif, Jihane, Abdennaceur Baghdad, Aicha Sahel, Abdelmajid Badri, and Abdelhakim Ballouk. "How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?" International Journal of Electrical and Computer Engineering (IJECE) 9, no. 5 (October 1, 2019): 3432. http://dx.doi.org/10.11591/ijece.v9i5.pp3432-3440.

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<p>In telecommunication systems, Heterojunction Bipolar Transistors (HBTs) are used extensively due to their good electrical characteristics. The work presented in this paper aims to enhance the electrical performance of the InP / InGaAs Single Heterojunction Bipolar Transistor (SHBT) in terms of the static current gain β. Silvaco’s TCAD tools were used for the simulation of the output characteristics of the studied electronic device. Initially, we used the interactive tool Deckbuild to define the simulation program and the device editor DevEdit to design the device structure, and we also used the simulator Atlas which allows the prediction of the electrical characteristics of most semiconductor devices. Because of several phenomena occuring within the electronic device SHBT, we added some physical models included in the simulator such as SRH, BBT.STD. Afterwards, we investigated the influence of doping concentrations of the base and the collector N<sub>b</sub> and N<sub>c</sub> on the electrical performance of the InP/InGaAs SHBT, and particularly in terms of the static current gain β. Finally, based on optimal values of the selected parameters, we have defined an optimized device that has a highest current gain β.</p>
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WANG, KEH-CHUNG, RANDALL B. NUBLING, KEN PEDROTTI, NENG-HAUNG SHENG, PETER M. ASBECK, KEN POULTON, JOHN CORCORAN, KNUD KNUDSEN, HAN-TZONG YUAN, and CHRISTOPHER CHANG. "AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS." International Journal of High Speed Electronics and Systems 05, no. 03 (September 1994): 213–52. http://dx.doi.org/10.1142/s0129156494000127.

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AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technology has emerged as an important IC technology for high performance electronic systems. Many outstanding circuits have been demonstrated as a result of the AlGaAs/GaAs HBTs high speed, high accuracy and its semi-insulating substrate. Several GaAs HBT manufacturing lines have been established; some of which are shipping products. In this paper, we describe AlGaAs/GaAs HBT technology, summarize some key and representative circuits in analog, A/D conversion and digital applications, and provide prospects of GaAs HBT research.
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Neinhüs, B., S. Decker, P. Graf, F. M. Bufler, and B. Meinerzhagen. "Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times." VLSI Design 8, no. 1-4 (January 1, 1998): 387–91. http://dx.doi.org/10.1155/1998/49783.

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Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature TC and lattice temperature TL. 2) Modeling of the relaxation times τ(x, TC, TL) by splines.
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ZHOU, K., J. R. GUO, C. YOU, J. MAYEGA, R. P. KRAFT, T. ZHANG, J. F. McDONALD, and B. S. GODA. "MULTI-GHzSiGe BiCMOS FPGAs WITH NEW ARCHITECTURE AND NOVEL POWER MANAGEMENT TECHNIQUES." Journal of Circuits, Systems and Computers 14, no. 02 (April 2005): 179–93. http://dx.doi.org/10.1142/s0218126605002234.

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The availability of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices has opened a door for GHz Field Programmable Gate Arrays (FPGAs).1,2 The integration of high-speed SiGe HBTs and low-power CMOS gives a significant speed advantage to SiGe FPGAs over CMOS FPGAs. In the past, high static power consumption discouraged the pursuit of bipolar FPGAs from being scaled up significantly. This paper details new ideas to reduce power in designing high-speed SiGe BiCMOS FPGAs. The paper explains new methods to reduce circuitry and utilize a novel power management scheme to achieve a flexible trade-off between power consumption and circuit speed. In addition, new decoding logic is developed with shared address and data lines. A SiGe FPGA test chip based on the Xilinx 6200 architecture has been fabricated for demonstration.
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Wu, Li Fan. "A 36 GHz CIFF-TFF Dynamic Frequency Divider Using GaAs HBTs." Applied Mechanics and Materials 441 (December 2013): 125–28. http://dx.doi.org/10.4028/www.scientific.net/amm.441.125.

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A clock-inverter feed-forward toggle flip-flop (CIFF-TFF) based ultra-high-speed 2:1 dynamic frequency divider is designed in a GaAs heterojunction bipolar transistor (HBT) technology with fT of 60 GHz from Win Semiconductors corporation. The co-simulation methodology of electromagnetic field and schematic diagram is utilized in the design. Through tuning the currents in the core and the other parts of the divider separately, the dynamic frequency divider approaches an operating speed of 36 GHz with a power consumption of 162 mW in the core part from a single 6 V supply. The design is currently taped out.
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Suda, Jun, Yuki Nakano, Syouta Shimada, Koichi Amari, and Tsunenobu Kimoto. "Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors." Materials Science Forum 527-529 (October 2006): 1545–48. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1545.

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Characterization of n+-GaN/p−-SiC and n+-GaN/p+-SiC heterojunctions as well as fabrication of GaN/SiC heterojunction bipolar transistors (HBTs) using these heterojunctions is presented. The electroluminescence spectrum from n+-GaN/p+-SiC heterojunction diodes under forward bias clearly indicates electron injection from n+-GaN into p+-SiC. HBTs consisting of n+-GaN emitter /p+-SiC base/n−-SiC collector/n+-SiC substrate have been fabricated. Although clear common-base properties were obtained, the current gain was very low (10-4). SiC homojunction bipolar junction transistors (BJT) using the same base-collector junction exhibited a current gain value of 0.5, suggesting the low current gain of GaN/SiC HBTs originates from low emitter efficiency.
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Dissertations / Theses on the topic "Heterojunction bipolar transistor (HBT’s)"

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Xu, Ziyan Niu Guofu. "Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs." Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.

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Pan, Jun Niu Guofu. "Systematic characterization and modeling of small and large signal performance of 50 - 200 GHz SiGe HBTs." Auburn, Ala., 2005. http://repo.lib.auburn.edu/2005%20Summer/doctoral/PAN_JUN_24.pdf.

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Zhang, Yongjian. "Investigation of electrical and optical characterisation of HBTs for optical detection." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/investigation-of-electrical-and-optical-characterisation-of-hbts-for-optical-detection(3c47e08f-9201-4465-b2b5-268aa0360309).html.

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In this thesis, a detailed study of the electrical and optical characterisations of Heterojuction Bipolar Transistors (HBTs) for optical detection is presented. By comparing both DC and optical characterisations between In0.49Ga0.51P/GaAs Single Heterojuction Bipolar Transistors (SHBTs) and Double Heterojuction Bipolar Transistors (DHBTs), the advantages of using the DHBT as a short wavelength detector are shown. Phenomena related to the base region energy band bending in the DHBT caused by a self-induced effective electric field is discussed and its effects on the performance of the device are elaborated. The use of an eye diagram has been employed to provide requisite information for performance qualification of SHBT/DHBT devices. These give a more detailed understanding compared to conventional S-parameters method. A detailed comparison of In0.49Ga0.51P/GaAs SHBT and DHBT performance using an eye diagram as a functional tool by adopting a modified T-shaped small signal equivalent circuit are given. By adopting this modified T-shaped small signal equivalent circuit, the use of In0.49Ga0.51P/GaAs Double Heterojuction Phototransistors (DHPT) as a short wavelength photodetector is analysed. It is therefore shown that an eye diagram can act as a powerful tool in HBTs/HPTs design optimisations, for the first time in this work. In order to predict the spectral response (SR) and optical characterisations of GaAs-based HPTs, a detailed theoretical absorption model is also presented. The layer dependence of an optical flux absorption profile, along with doping dependent absorption coefficients are taken into account for the optical characterisation prediction. With the aim of eliminating the limitation of current gain as a prerequisite, analytical modelling of SR has been developed by resolving the continuity equation and applying realistic boundary conditions. Then, related physical parameters and a layer structure profile are used to implement simulations. A good agreement with the measured results of the Al0.3Ga0.7As/GaAs HPT is shown validating the proposed theoretical model.
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Yuan, Jiahui. "SiGe HBTs Operating at Deep Cryogenic temperatures." Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14609.

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As Si-manufacturing compatible SiGe HBTs are making rapid in-roads into RF through mm-wave circuit applications, with performance levels steadily marching upward, the use of these devices under extreme environment conditions are being studied extensively. In this work, test structures of SiGe HBTs were designed and put into extremely low temperatures, and a new negative differential resistance effect and a novel collector current kink effect are investigated in the cryogenically-operated SiGe HBTs. Theory based on an enhanced positive feedback mechanism associated with heterojunction barrier effect at deep cryogenic temperatures is proposed. The accumulated charge induced by the barrier effect acts at low temperatures to enhance the total collector current, indirectly producing both phenomena. This theory is confirmed using calibrated 2-D DESSIS simulations over temperature. These unique cryogenic effects also have significant impact on the ac performance of SiGe HBTs operating at high-injection. Technology evolution plays an important role in determining the magnitude of the observed phenomena, and the scaling implications are addressed. Circuit implication is discussed.
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CHIRALA, MOHAN KRISHNA. "DESIGN, SIMULATION AND MODELING OF COLLECTOR-UP GalnP/GaAs HETEROJUNCTION OF BIPOLAR TRANSISTORS." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1027960962.

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Rennane, Abdelali. "Caractérisation et modélisation du bruit basse fréquence des composants bipolaires et à effet de champ pour applications micro-ondes." Toulouse 3, 2004. http://www.theses.fr/2004TOU30236.

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Le travail présenté dans ce mémoire a pour objet principal l’étude des phénomènes de bruit du fond électrique basse fréquence dans des transistors pour applications micro-ondes de type effet de champ (HEMT) sur SiGe et GaN ainsi que de type bipolaire à hétérojonction (TBH) à base de silicium-germanium (SiGe). Dans un premier chapitre nous rappelons les caractéristiques et propriétés essentielles des sources de bruit en excès que l’on rencontre généralement dans ce type de composants et proposons une description des bancs de mesure de bruit mis en oeuvre. Dans les deuxième et troisième chapitres, nous proposons une analyse détaillée de l’évolution du bruit observé en fonction de la fréquence, de la polarisation, et de la géométrie sur des HEMTs des deux familles technologiques SiGe et GaN. Nous avons en particulier étudié les deux générateurs de bruit en courant en entrée et en sortie respectivement iG et iD ainsi que leur corrélation. Ceci nous a permis, en nous appuyant aussi sur l’analyse des caractéristiques statiques des transistors, d’identifier les diverses sources de bruit en excès présentes dans ces composants et de faire des hypothèses sur leurs origines. Le dernier chapitre est consacré aux TBHs à base de SiGe. Dans une première partie nous établissons comment varie le bruit basse fréquence de TBHs, fabriqués par un premier constructeur, en fonction de la polarisation, de la géométrie et de la fraction molaire de germanium. Dans une seconde partie nous mettons en évidence, d’après nos observations effectuées sur des TBHs fabriqués par un second constructeur, l’impact important sur le bruit BF de stress thermiques appliqués sur ce type de composants
This thesis deals mainly with electrical noise in microwave silicon germanium (SiGe) and gallium nitride (GaN) field effect transistors (HEMT’s) and SiGe heterojunction bipolar transistors (HBT’s). The organisation of this memory is as follows, in first chapter, we remember the important properties of excess noise sources encountered in these type devices. In addition, we describe the measurement set-ups used for static and noise characterization. In the second and third chapters, a thoroughful analysis of the noise dependence on frequency, bias, and geometry of both SiGe and GaN HEMT’s, has been carried out, specifically, the input and output current noise sources respectively iG and iD and their correlation. This in combination with static characterization, allowed to identify the different noise sources present in these devices and their supposed origin. .
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Grens, Curtis Morrow. "Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29622.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Cressler, John; Committee Member: Gerhardt, Rosario; Committee Member: Ingram, Mary Ann; Committee Member: Papapolymerou, John; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Sutton, Akil K. "Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7217.

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A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behin the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview of radiation physics as it applies to microelectronic devices. Several sources of radiation are discussed including the environments encountered by satellites in different orbital paths around the earth. The particle types, interaction mechanisms and damage nomenclature are described. Proton irradiation experiments to analyze worst case displacement and ionization damage are examined in chapter III. A description of the test conditions is first presented, followed by the experimental results on the observed dc and ac transistor performance metrics with incident radiation. The impact of the collector doping level on the degradation is discussed. In a similar fashion, gamma irradiation experiments to focus on ionization only effects are presented in chapter IV. The experimental design and dc results are first presented, followed by a comparison of degradation under proton irradiation. Additional proton dose rate experiments conducted to further investigate observed differences between proton and gamma results are presented.
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Zhu, Chendong. "The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14647.

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The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry, after which the new stress path, Mixed-Mode stress, is introduced. Chapter 2 is devoted to an in-depth discussion of damage mechanisms that includes the impact ionization effct and the selfheating effect. Chapter 3 goes onto the impact ionization effect using two-dimensional calibrated MEDICI simulations. Chapter 4 assesses the reliability of SiGe HBTs in extreme temperature environments by way of comprehensive experiments and MEDICI simulations. A comparison of the device lifetimes for reverse-EB stress and mixed-mode stress indicates different damage mechanisms govern these phenomena. The thesis concludes with a summary of the project and suggestions for future research in chapter 5.
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Appaswamy, Aravind. "Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33970.

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The objective of this work is to investigate the performance of SiGe HBTs and scaled CMOS devices in extreme environments. In this work, the inverse mode operation of SiGe HBTs is investigated as a potential solution to the vulnerability of SiGe HBTs to single event effects. The performance limitations of SiGe HBTs operating in inverse mode are investigated through an examination of the effects of scaling on inverse mode performance and optimization schemes for inverse mode performance enhancements are discussed and demonstrated. In addition the performance of scaled MOSFETs, that constitute the digital backbone of any BiCMOS technology, is investigated under radiation exposure and cryogenic temperatures. Extreme environments and their effects on semiconductor devices are introduced in Chapter 1. The immunity of 90nm MOSFETs to total ionizing dose damage under proton radiation is demonstrated. Inverse mode operation of SiGe HBTs is introduced in Chapter 2 as a potential radiation hard solution by design. The effect of scaling on inverse mode performance of SiGe HBTs is investigated and the performance limitations in inverse mode are identified. Optimization schemes for improving inverse mode performance of SiGe HBTs are discussed in Chapter 3. Inverse mode performance enhancement is demonstrated experimentally in optimized device structures manufactured in a commercial third generation SiGe HBT BiCMOS platform. Further, a cascode device structure, the combines the radiation immunity of an inverse mode structure with the performance of a forward mode common emitter device is XIV discussed. Finally, idealized doping profiles for inverse mode performance enhancement is discussed through TCAD simulations. The cryogenic performance of inverse mode SiGe HBTs are discussed in Chapter 4. A novel base current behavior at cryogenic temperature is identified and its effect on the inverse mode performance is discussed. Matching performance of a 90nm bulk CMOS technology at cryogenic temperatures is investigated experimentally and through TCAD simulations in Chapter 5. The effect of various process parameters on the temperature sensitivity of threshold voltage mismatch is discussed. The potential increase of mismatch in subthreshold MOSFETs operating in cryogenic temperatures due to hot carrier effects is also investigated.
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Books on the topic "Heterojunction bipolar transistor (HBT’s)"

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Chink, Hope Wuming. Emitter-up heterojunction bipolar transistor compatible laser. Ottawa: National Library of Canada, 1998.

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Xavier, Bernard Anthony. Analysis & modelling of gallium arsenide heterojunction bipolar transistor mixers. Uxbridge: Brunel University, 1993.

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Young, Stephen M. A superlattice emitter structure for a heterojunction bipolar transistor. Manchester: UMIST, 1993.

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An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits. Konstanz: Hartung-Gorre Verlag, 2005.

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Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.

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This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physics of materials anddevices. This article begins with an overview of the growth of silicon-germanium alloys, followed by a discussion of the effect of strain on the band structure and properties of Si/SiGe devices. It then considers two mainstream nanoelectronic applications of Si/SiGe heterostructures, namely HBTs and CMOS. It also looks at resonant tunnelling diodes and SiGe quantum cascade emitters.
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Lebby, Michael Stephen. Fabrication and characterisation of the heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BICFET): Characterisations of HFETs.... Bradford, 1987.

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Book chapters on the topic "Heterojunction bipolar transistor (HBT’s)"

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Cressler, John D. "Silicon-Germanium Heterojunction Bipolar Transistor." In Device and Circuit Cryogenic Operation for Low Temperature Electronics, 69–84. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1_4.

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Su, L. M., N. Grote, P. Schumacher, and D. Franke. "Implanted-collector InGaAsP/InP Heterojunction Bipolar Transistor." In ESSDERC ’89, 275–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_57.

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Das, Arnima, Maitreyi Ray Kanjilal, and Payel Biswas. "Frequency Response of Si/SiGe Heterojunction Bipolar Transistor." In Computational Advancement in Communication Circuits and Systems, 339–44. New Delhi: Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2274-3_37.

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Godfrey, D. J. "Electrical Characterization of SiGe Heterojunction Bipolar Transistors (HBTs) Formed by Molecular Beam Epitaxy (MBE)." In Condensed Systems of Low Dimensionality, 669–74. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-1348-9_51.

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Asbeck, P. M. "Heterojunction Bipolar Transistor Technology for High-Speed Integrated Circuits." In Picosecond Electronics and Optoelectronics, 32–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_5.

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Teeter, Douglas A., Jack R. East, Richard K. Mains, and George I. Haddad. "A Numerical Large Signal Model for the Heterojunction Bipolar Transistor." In Computational Electronics, 43–46. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2124-9_7.

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Okada, Y., and K. Tada. "GaAs/AlGaAs Reflection-Type Optical Switch Using Heterojunction Bipolar Transistor Waveguide Structure." In Photonic Switching II, 50–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76023-5_8.

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Min, Byoung Gue, Jong Min Lee, Seong Il Kim, Chul Won Ju, and Kyung Ho Lee. "Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall." In Solid State Phenomena, 97–100. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.97.

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Amari, Koichi, Jun Suda, and Tsunenobu Kimoto. "Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor." In Materials Science Forum, 1039–42. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.1039.

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Ouchrif, J., A. Baghdad, A. Sahel, A. Badri, and A. Ballouk. "Improved Electrical Performance of InP-Based Single Heterojunction Bipolar Transistor in Terms of the Maximum Frequency of Oscillation." In Lecture Notes in Electrical Engineering, 319–26. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_39.

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Conference papers on the topic "Heterojunction bipolar transistor (HBT’s)"

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Martin, P., R. Bisaro, C. Dua, O. Noblanc, S. L. Delage, D. Floriot, F. Lemaire, P. Galtier, J. P. Landesman, and C. Brylinski. "Temperature Distributions in III-V and SiC Micro-Wave Power Transistors Using Spatially Resolved Photoluminescence and Raman-Spectrometry Mapping Respectively." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0435.

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Abstract This paper describes a new method for the mapping of local temperatures in the active region of highpower III-V semiconductor transistors for microwave applications. The measurement technique involves scanning a focused laser beam at the surface of a chip inside its package, while the photoluminescence (PL) or the Raman spectra produced are recorded sequentially for each position of the laser beam. The local temperature is deduced either from the corresponding wavelength shift of the PL (which represents changes in the band-gap due to heating) or from Raman Stokes peak shift or from the Stokes to anti-Stokes intensity ratio (which correspond to changes in optical phonon frequencies and population respectively due to heating). Results are shown both for SiC-based field effect transistors and for bipolar type transistors (heterojunction bipolar transistors – HBTs – in the GaAs/Ga1-xInxP system). A spatial resolution of 1 µm and an accuracy in the temperature determination of ± 3 °C are demonstrated, especially for the HBTs. Finally, procedures are proposed to implement the information on local operating temperatures provided by this method into thermal resistance calculations.
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Khalkhali, H., S. Mohammadi, L. P. B. Katehi, and K. Kurabayashi. "Design and Analysis of Micromachined Thermosyphon for Cooling of High-Power InP HBT Circuits." In ASME 2003 International Mechanical Engineering Congress and Exposition. ASMEDC, 2003. http://dx.doi.org/10.1115/imece2003-41108.

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Integrated InP heterojunction bipolar transistors (HBTs) are used as a high-speed switch in high-power radio frequency (RF) circuits for microwave wireless communications. The power dissipation of each of these devices often reaches as high as 1 W, raising concerns for their thermal reliability. The relatively poor thermal conductivity of InP prohibits effective spreading of heat within the device substrate. To address this problem, this work proposes a novel microfluidic device called the “micro thermosyphon” for cooling the InP-based microwave circuits. This paper describes the concept of the micro thermosyphon and presents its design and analysis, accounting for the large surface tension effect of the working fluid at the micrometer scale. Our simulation suggests that the proposed device could remove a heat flux density as large as 25 W/cm2 from a high-power InP HBT circuit while maintaining the circuit temperature lower than 100 °C. The micro thermosyphon is a fully passive cooling device suited for achieving effective on-chip cooling without requiring any drive power. Experimental work is currently being under way to validate the device performance.
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Alivov, Ya I., Q. Fan, X. Ni, S. Chevtchenko, I. B. Bhat, and H. Morkoç. "AlGaN/SiC heterojunction bipolar transistor." In Integrated Optoelectronic Devices 2008, edited by Hadis Morkoç, Cole W. Litton, Jen-Inn Chyi, Yasushi Nanishi, and Euijoon Yoon. SPIE, 2008. http://dx.doi.org/10.1117/12.763143.

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Kindereit, Ulrike, Oana-Mihaela Mutihac, Christian Boit, and Bernd Tillack. "Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)." In 2011 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2011. http://dx.doi.org/10.1109/irps.2011.5784527.

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Yu-Qiu Chen and Shiou-Ying Cheng. "An InP/InGaAs double heterojunction bipolar transistor." In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061115.

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SASAKI, Kimihiro, and Seijiro FURUKAWA. "A Micro-Crystal Emitter Heterojunction Bipolar Transistor." In 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.s-i-2.

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Gruhle, A., H. Kibbel, and R. Speck. "8-12GHz VCO with SiGe Heterojunction Bipolar Transistor." In 24th European Microwave Conference, 1994. IEEE, 1994. http://dx.doi.org/10.1109/euma.1994.337284.

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Murtagh, Martin E., Patrick Kelly, Breda O'Looney, Frank Murphy, and Mircea Modreanu. "Heterojunction bipolar transistor characterization using noncontact optical spectroscopy." In OPTO Ireland, edited by Thomas J. Glynn. SPIE, 2003. http://dx.doi.org/10.1117/12.467862.

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Feng, Milton, and William Snodgrass. "Toward THz Transistor: Pseudomorphic Heterojunction Bipolar Transistors (PHBT)." In >2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics. IEEE, 2006. http://dx.doi.org/10.1109/icimw.2006.368756.

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Cheng, Shiou-Ying, Chun-Yuan Chen, Jing-Yuh Chen, Hung-Ming Chuang, Wen-Chau Liu, Wen-Lung Chang, Hsi-Jen Pan, and Pao-Chuan Chen. "Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers." In Microelectronics, MEMS, and Nanotechnology, edited by Jung-Chih Chiao, Alex J. Hariz, David N. Jamieson, Giacinta Parish, and Vijay K. Varadan. SPIE, 2004. http://dx.doi.org/10.1117/12.522286.

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Reports on the topic "Heterojunction bipolar transistor (HBT’s)"

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Rodwell, Mark, M. Urtega, D. Scott, M. Dahlstrom, and Y. Betser. Ultra High Speed Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, January 2000. http://dx.doi.org/10.21236/ada413790.

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Miller, D. L., and P. M. Asbeck. Fundamental Aspects of Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, July 1986. http://dx.doi.org/10.21236/ada171225.

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Gillespie, James K. AFRL/GaAsTek Heterojunction Bipolar Transistor (HBT) Process Development. Fort Belvoir, VA: Defense Technical Information Center, October 2001. http://dx.doi.org/10.21236/ada415646.

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Patrizi, G. A., M. L. Lovejoy, R. P. Jr Schneider, H. Q. Hou, and P. M. Enquist. Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies. Office of Scientific and Technical Information (OSTI), December 1995. http://dx.doi.org/10.2172/212553.

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Long, Stephen I., Herbert Kroemer, and M. A. Rao. Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic. Fort Belvoir, VA: Defense Technical Information Center, October 1986. http://dx.doi.org/10.21236/ada174580.

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Mitchell, Gregory A. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms. Fort Belvoir, VA: Defense Technical Information Center, September 2011. http://dx.doi.org/10.21236/ada552934.

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