Journal articles: 'Heterojunction bipolar transistor (HBT’s)'

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Li, Li, and Hong Xia Liu. "Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance." Advanced Materials Research 317-319 (August 2011): 1183–86. http://dx.doi.org/10.4028/www.scientific.net/amr.317-319.1183.

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SiGe heterojunction structure much improves the performance of PnP HBT (heterojunction bipolar transistor), which focus on the impact of Ge component distribution in the base on the current gain and characteristic frequency . The triangular distribution in the base, including zero-doping and non-zero-doping at the starting point, will form a Ge-gradient acceleration filed for the minority carriers in the base to reduce the base transport time and increase current density and working frequency. Extend Ge to the collector region to eliminate the effect of the valence band spike barrier at the collector junction, further improving the performance of the pnp HBT. By the simulations and optimizations in this paper, the and of pnp SiGe HBT improves evidently, and the results can be referenced in the design of SiGe devices and circuits.

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WASHIO, KATSUYOSHI. "SELF-ALIGNED Si BJT/SiGe HBT TECHNOLOGY AND ITS APPLICATION TO HIGH-SPEED CIRCUITS." International Journal of High Speed Electronics and Systems 11, no. 01 (March 2001): 77–114. http://dx.doi.org/10.1142/s0129156401000794.

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In a Si bipolar transistor (BJT) and a SiGe heterojunction bipolar transistor (HBT), self-aligned structures help to improve high-speed and high-frequency characteristics. These structures are used to reduce parasitic capacitance and resistance, and thus maximize the transistor's intrinsic performance. In addition to generally used process technology, selective metal deposition to form electrodes and selective epitaxial growth of Si/SiGe multilayers are applied in the fabrication process. To improve the intrinsic speed, the cutoff frequency, a shallow diffusion process for Si BJTs and a graded-Ge profile SiGe-base layer for SiGe HBTs are used. These also enable a high maximum oscillation frequency and a small gate delay in the emitter-coupled logic through the synergistic effect of the self-aligned structure. Both high-speed digital circuits — frequency dividers up to millimeter-wave bands and a multiplexer/demultiplexer for optical-fiber-links — and high-frequency analog circuits for optical-fiber-links — a preamplifier, an automatic gain control amplifier. a limiting amplifier, and a decision circuit — have been implemented by applying the self-aligned Si BJTs and/or SiGe HBTs.

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Urteaga, M., S. Krishnan, D. Scott, Y. Wei, M. Dahlstrom, S. Lee, and M. J. W. Rodwell. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (June 2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate transfer process. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained record 21 dB unilateral power gain at 100 GHz. Recently-fabricated devices have shown unbounded unilateral power gain from 40-110 GHz, and fmax cannot be extrapolated from measuremente. However, these devices exhibited high power gains at 220 GHz, the frequency limit of presently available microwave network analyzers. Demonstrated amplifier ICs in the technology include reactively tuned amplifiers at 175 GHz, lumped and distributed amplifiers with bandwidths to 85 GHz, and W-band power amplifiers.

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Yang, Jing Wei, and Meng Meng Xu. "Failure Model Research of Power HBTs." Advanced Materials Research 926-930 (May 2014): 1348–51. http://dx.doi.org/10.4028/www.scientific.net/amr.926-930.1348.

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Heterojunction bipolar transistors (HBTs) are playing an important role in microwave and power applications. When HBTs operated at high power, the power dissipation and self-heating effects will enable the generation of electrical properties in the transistor failure. The failure experiment system of microwave power HBTs was established. Based on this system, the changes of electrical parameters of HBTs in deferent stress, such as Gummel plots, base current various different base-emitter voltage and base-collector voltage, were measured and analyzed. At the same time, the failure of base current of SiGe HBTs under the condition of FC, SC and thermal stress are studied respectively. It was found that ΔIBis the sensitive parameter of electrical and thermal stress. Based on this reason, we presented the failure model of IB. This model could explain the experiment phenomenon successfully, which is very important and useful for applications of microwave power analog IC’s.

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Ouchrif, Jihane, Abdennaceur Baghdad, Aicha Sahel, Abdelmajid Badri, and Abdelhakim Ballouk. "How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?" International Journal of Electrical and Computer Engineering (IJECE) 9, no. 5 (October 1, 2019): 3432. http://dx.doi.org/10.11591/ijece.v9i5.pp3432-3440.

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In telecommunication systems, Heterojunction Bipolar Transistors (HBTs) are used extensively due to their good electrical characteristics. The work presented in this paper aims to enhance the electrical performance of the InP / InGaAs Single Heterojunction Bipolar Transistor (SHBT) in terms of the static current gain β. Silvaco’s TCAD tools were used for the simulation of the output characteristics of the studied electronic device. Initially, we used the interactive tool Deckbuild to define the simulation program and the device editor DevEdit to design the device structure, and we also used the simulator Atlas which allows the prediction of the electrical characteristics of most semiconductor devices. Because of several phenomena occuring within the electronic device SHBT, we added some physical models included in the simulator such as SRH, BBT.STD. Afterwards, we investigated the influence of doping concentrations of the base and the collector Nb and Nc on the electrical performance of the InP/InGaAs SHBT, and particularly in terms of the static current gain β. Finally, based on optimal values of the selected parameters, we have defined an optimized device that has a highest current gain β.

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WANG, KEH-CHUNG, RANDALL B. NUBLING, KEN PEDROTTI, NENG-HAUNG SHENG, PETER M. ASBECK, KEN POULTON, JOHN CORCORAN, KNUD KNUDSEN, HAN-TZONG YUAN, and CHRISTOPHER CHANG. "AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS." International Journal of High Speed Electronics and Systems 05, no. 03 (September 1994): 213–52. http://dx.doi.org/10.1142/s0129156494000127.

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AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technology has emerged as an important IC technology for high performance electronic systems. Many outstanding circuits have been demonstrated as a result of the AlGaAs/GaAs HBTs high speed, high accuracy and its semi-insulating substrate. Several GaAs HBT manufacturing lines have been established; some of which are shipping products. In this paper, we describe AlGaAs/GaAs HBT technology, summarize some key and representative circuits in analog, A/D conversion and digital applications, and provide prospects of GaAs HBT research.

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Neinhüs, B., S. Decker, P. Graf, F. M. Bufler, and B. Meinerzhagen. "Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times." VLSI Design 8, no. 1-4 (January 1, 1998): 387–91. http://dx.doi.org/10.1155/1998/49783.

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Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature TC and lattice temperature TL. 2) Modeling of the relaxation times τ(x, TC, TL) by splines.

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ZHOU, K., J. R. GUO, C. YOU, J. MAYEGA, R. P. KRAFT, T. ZHANG, J. F. McDONALD, and B. S. GODA. "MULTI-GHzSiGe BiCMOS FPGAs WITH NEW ARCHITECTURE AND NOVEL POWER MANAGEMENT TECHNIQUES." Journal of Circuits, Systems and Computers 14, no. 02 (April 2005): 179–93. http://dx.doi.org/10.1142/s0218126605002234.

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The availability of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices has opened a door for GHz Field Programmable Gate Arrays (FPGAs).1,2 The integration of high-speed SiGe HBTs and low-power CMOS gives a significant speed advantage to SiGe FPGAs over CMOS FPGAs. In the past, high static power consumption discouraged the pursuit of bipolar FPGAs from being scaled up significantly. This paper details new ideas to reduce power in designing high-speed SiGe BiCMOS FPGAs. The paper explains new methods to reduce circuitry and utilize a novel power management scheme to achieve a flexible trade-off between power consumption and circuit speed. In addition, new decoding logic is developed with shared address and data lines. A SiGe FPGA test chip based on the Xilinx 6200 architecture has been fabricated for demonstration.

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9

Wu, Li Fan. "A 36 GHz CIFF-TFF Dynamic Frequency Divider Using GaAs HBTs." Applied Mechanics and Materials 441 (December 2013): 125–28. http://dx.doi.org/10.4028/www.scientific.net/amm.441.125.

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A clock-inverter feed-forward toggle flip-flop (CIFF-TFF) based ultra-high-speed 2:1 dynamic frequency divider is designed in a GaAs heterojunction bipolar transistor (HBT) technology with fT of 60 GHz from Win Semiconductors corporation. The co-simulation methodology of electromagnetic field and schematic diagram is utilized in the design. Through tuning the currents in the core and the other parts of the divider separately, the dynamic frequency divider approaches an operating speed of 36 GHz with a power consumption of 162 mW in the core part from a single 6 V supply. The design is currently taped out.

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Suda, Jun, Yuki Nakano, Syouta Shimada, Koichi Amari, and Tsunenobu Kimoto. "Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors." Materials Science Forum 527-529 (October 2006): 1545–48. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1545.

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Characterization of n+-GaN/p−-SiC and n+-GaN/p+-SiC heterojunctions as well as fabrication of GaN/SiC heterojunction bipolar transistors (HBTs) using these heterojunctions is presented. The electroluminescence spectrum from n+-GaN/p+-SiC heterojunction diodes under forward bias clearly indicates electron injection from n+-GaN into p+-SiC. HBTs consisting of n+-GaN emitter /p+-SiC base/n−-SiC collector/n+-SiC substrate have been fabricated. Although clear common-base properties were obtained, the current gain was very low (10-4). SiC homojunction bipolar junction transistors (BJT) using the same base-collector junction exhibited a current gain value of 0.5, suggesting the low current gain of GaN/SiC HBTs originates from low emitter efficiency.

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Saleh, Alaa, Abdel Kader El Rafei, Mountakha Dieng, Tibault Reveyrand, Raphael Sommet, Jean-Michel Nebus, and Raymond Quere. "Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's." International Journal of Microwave and Wireless Technologies 4, no. 6 (August 29, 2012): 569–78. http://dx.doi.org/10.1017/s1759078712000566.

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The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).

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Miyake, Hiroki, Tsunenobu Kimoto, and Jun Suda. "Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction." Materials Science Forum 615-617 (March 2009): 979–82. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.979.

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GaN/SiC Heterojunction Bipolar Transistors (HBTs) with ultra-thin AlN insertion layers at the n-GaN/p-SiC emitter junction are proposed to improve carrier injection efficiency. The current-voltage characteristics of n-GaN/AlN/p-SiC heterojunctions have exhibited very small reverse leakage and good rectification. The capacitance-voltage measurement have revealed that the conduction band offset between n-GaN and p-SiC has been reduced from -0.74 eV to -0.54 eV by insertion of AlN, indicating that the GaN/AlN/SiC heterojunction may show better electron-injection efficiency. A significantly improved common-base current gain (α~0.2) is obtained for GaN/AlN/SiC HBTs with initial N* pre-irradiation, while it was very low (α~0.001) for GaN/SiC HBTs without AlN layers.

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Lakhdara, Maya, Saϊda Latreche, and Christian Gontrand. "Static Performance of SiGe HBTs at Low Temperature." Applied Mechanics and Materials 666 (October 2014): 59–63. http://dx.doi.org/10.4028/www.scientific.net/amm.666.59.

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—This paper analyse is the impact of cryogenic temperatures for SiGe Heterojunction Bipolar Transistors (HBTs) base, realised in BiCMOS9 0.13μm industrial process. The use of these components in microwaves applications exposed to various temperatures is fundamental aspect to predict in precise way its electric characteristics. This paper investigates the temperature dependence from (170 K to 300 K) of DC, for NPN SiGe heterojunction bipolar transistors (HBTs) and notably modeling high performance Si/SiGe HBT for telecommunication and radar detection (>0.5THz) in low temperature (cryogenic temperature).

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XING, HUILI G., and UMESH K. MISHRA. "TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 819–24. http://dx.doi.org/10.1142/s0129156404002892.

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DC I-V characteristics of AlGaN/GaN heterojunction bipolar transistors (HBTs) and GaN homojunction bipolar transistors (BJTs) are analyzed in the temperature range of 200-450 K. At low current levels, the adverse effects of poor ohmic contacts coupled with paths of high leakage make it difficult to extract intrinsic device operation ["Explanation of anomalous current gain observed in GaN based bipolar transistors", Xing et al. IEEE Elect. Dev. Lett. 24(1) 2003:p.4-6]. At intermediate current levels, owing to enhanced ionization of Mg in the base, the HBTs show an increase in current gain resulting from mitigated current crowding, and the BJTs show a decrease in current gain resulting from reduction of emitter injection coefficient. The offset voltage dependence on temperature is also explained.

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LIU, WILLIAM, EDWARD BEAM, KIM TAE, and ALI KHATIBZADEH. "RECENT DEVELOPMENTS IN GaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS." International Journal of High Speed Electronics and Systems 05, no. 03 (September 1994): 411–71. http://dx.doi.org/10.1142/s0129156494000188.

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We review the recent developments of GaInP/GaAs heterojunction bipolar transistors (HBTs) used for microwave power, low noise, linear amplification and high temperature applications. Special attention is paid in the comparison of the GaInP HBT results with the more conventional AlGaAs HBTs. The material and processing advantages, as well as the electronic and thermal properties of GaInP are described.

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REN, F. "FABRICATION TECHNIQUES FOR SELF-ALIGNED GaAs-BASED HBTs AND SUBMICRON GATE LENGTH FETs." International Journal of Modern Physics B 08, no. 16 (July 20, 1994): 2221–43. http://dx.doi.org/10.1142/s0217979294000907.

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Process technologies for self-aligned AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) as well as gate definition and dry etching fabrication schemes for submicron gate length AlGaAs/GaAs-based field effect transistors (FETs) are presented. Multiple energy F + and H + ions were used to isolate the active devices for HBTs. The resistance of test wafers at 200° C showed no change over periods of more than 50 days. Highly selective dry and wet etch techniques for InGaP/GaAs and AlGaAs/GaAs material systems were used to uniformly expose heterojunctions. Reliability of the alloyed ohmic contact and feasibility of the nonalloyed ohmic contact metallizations for both p and n type GaAs layers will be discussed. The reproducible gate recess etching is one of the critical steps for AlGaAs/GaAs-based FETs. The etching selectivity, damage, pre- and post-clean procedures were studied in terms of device performance. A simple low temperature SiN x deposition and an etch-back process with optical stepper were used to demonstrate 0.1 µm Y-shape gate feature.

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Lee, Chie-In, Yan-Ting Lin, and Wei-Cheng Lin. "Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region." Active and Passive Electronic Components 2016 (2016): 1–5. http://dx.doi.org/10.1155/2016/8506507.

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Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

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Xu, Xiao Bo, He Ming Zhang, Hui Yong Hu, Jian Li Ma, and Li Jun Xu. "Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base." Applied Mechanics and Materials 110-116 (October 2011): 3311–15. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.3311.

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The standard Early voltage of the SPICE Gummel-Poon model (SGP) is generalized for SiGe npn heterojunction bipolar transistors (HBTs). An accurate model for Early effects compatible with the SGP model is obtained considering graded germanium induced bandgap narrowing effect in the base in modern SiGe HBTs and simplified to a compact model which is consistent with ISE TCAD simulation results. The presentation of the Early effect model is significant for the design and simulation of the high performance SiGe BiCMOS technology.

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AGARWAL, BIPUL, RAJASEKHAR PULLELA, UDDALAK BHATTACHARYA, DINO MENSA, QING-HUNG LEE, LORENE SAMOSKA, JAMES GUTHRIE, and MARK RODWELL. "ULTRAHIGH fmax AlInAs/GaInAs TRANSFERRED-SUBSTRATE HETEROJUNCTION BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUITS APPLICATIONS." International Journal of High Speed Electronics and Systems 09, no. 02 (June 1998): 643–70. http://dx.doi.org/10.1142/s0129156498000270.

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Transferred-substrate heterojunction bipolar transistors (HBTs) have demonstrated very high bandwidths and are potential candidates for very high speed integrated circuit (IC) applications. The transferred-substrate process permits fabrication of narrow and aligned emitter-base and collector-base junctions, reducing the collector-base capacitance and increasing the device f max . Unlike conventional double-mesa HBTs, transferred-substrate HBTs can be scaled to submicron dimensions with a consequent increase in bandwidth. This paper introduces the concept of transferred-substrate HBTs. Fabrication process in the AlInAs/GaInAs material system is presented, followed by DC and RF performance. A demonstration IC is shown along with some integrated circuits in development.

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CRESSLER, JOHN D. "TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS." International Journal of High Speed Electronics and Systems 14, no. 02 (June 2004): 489–501. http://dx.doi.org/10.1142/s0129156404002478.

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We present an overview of radiation effects in silicon-germanium heterojunction bipolar transistors ( SiGe HBT). We begin by reviewing SiGe HBTs, and then examine the impact of ionizing radiation on both the dc and ac performance of SiGe HBTs, the circuit-level impact of radiation-induced changes in the transistors, followed by single-event phenomena in SiGe HBT circuits. While ionizing radiation degrades both the dc and ac properties of SiGe HBTs, this degradation is remarkably minor, and is far better than that observed in even radiation-hardened conventional Si BJT technologies. This fact is particularly significant given that no intentional radiation hardening is needed to ensure this level of both device-level and circuit-level tolerance (typically multi-Mrad TID). SEU effects are pronounced in SiGe HBT circuits, as expected, but circuit-level mitigation schemes will likely be suitable to ensure adequate tolerance for many orbital missions. SiGe HBT technology thus offers many interesting possibilities for space-borne electronic systems.

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Gupta, Aakashdeep, K. Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, and Thomas Zimmer. "Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation." Electronics 9, no. 9 (August 23, 2020): 1365. http://dx.doi.org/10.3390/electronics9091365.

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In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries.

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GAO, GUANG-BO, S. NOOR MOHAMMAND, GREGORY A. MARTIN, and HADIS MORKOÇ. "FUNDAMENTALS, PERFORMANCE AND RELIABILITY OF III-V COMPOUND SEMICONDUCTOR HETEROJUNCTION BIPOLAR TRANSISTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 1–89. http://dx.doi.org/10.1142/s012915649500002x.

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Recent developments in the physics and technology of III-V compound heterojunction bipolar transistors (HBTs) are reviewed. The technologies discussed are AlGaAs/GaAs, GaInP/GaAs, InP/InGaAs, and AlInAs/InGaAs based heterostructures. WIth current gain cut off frequencies over 100 GHz and maximum oscillation frequencies of about 200 GHz, the III-V compound semiconductor based HBTs have advanced to the point of commercialization. These developments also had the fortuitous effect of providing impetus and theoretical base to advance Si based HBT technologies, such as SiGe HBTs, to advance also. Recent SiGe HBTs, taking advantage of advanced Si processing technologies, have also recorded performances in excess of 100 GHz with applications envisioned in high speed analog-digital converters. While there remain some voids in the fundamental understanding of HBTs, the state-of-the-art of the GaAs HBT technology, concerning reproducibility and reliability, is at a point where problems related to production are at the forefront. The next few years are going to prove interesting with each technology recording improved performance.

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Johansen, Tom K., Matthias Rudolph, Thomas Jensen, Tomas Kraemer, Nils Weimann, Frank Schnieder, Viktor Krozer, and Wolfgang Heinrich. "Small- and large-signal modeling of InP HBTs in transferred-substrate technology." International Journal of Microwave and Wireless Technologies 6, no. 3-4 (March 11, 2014): 243–51. http://dx.doi.org/10.1017/s1759078714000051.

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In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

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CHANG, M. F., and P. M. ASBECK. "III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS." International Journal of High Speed Electronics and Systems 01, no. 03n04 (September 1990): 245–301. http://dx.doi.org/10.1142/s0129156490000137.

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Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

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SANO, EIICHI, KAZUO HAGIMOTO, and YASUNOBU ISHII. "PRESENT STATUS AND FUTURE PROSPECTS OF HIGH-SPEED LIGHTWAVE ICS BASED ON INP." International Journal of High Speed Electronics and Systems 09, no. 02 (June 1998): 567–93. http://dx.doi.org/10.1142/s0129156498000245.

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High-speed integrated circuits (ICs) are essential for expanding the capacity of light-wave communications. InP-based heterostructure field effect transistors (HFETs) and heterojunction bipolar transistors (HBTs) are very promising for producing high-speed digital and analog ICs. This paper reviews the current status of InP-based lightwave communication ICs in terms of device, circuit, and packaging technologies. A successful 40-Gbit/s, 300-km optical fiber transmission using InP HFET ICs demonstrates the feasibility of the ICs. Furthermore, we estimate future IC performance based on the relationship between electron device figures-of-merit and IC speed. To keep up with the performance trend, technological problems, like inter- and intra-chip interconnections, have to be solved.

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QIN, GUOXUAN, JIANGUO MA, NINGYUE JIANG, ZHENQIANG MA, PINGXI MA, and MARCO RACANELLI. "EXPERIMENTAL CHARACTERIZATION OF PROTON RADIATED SiGe POWER HBTs AT EXTREME TEMPERATURES." Journal of Circuits, Systems and Computers 22, no. 10 (December 2013): 1340026. http://dx.doi.org/10.1142/s0218126613400264.

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The performances of proton irradiated silicon–germanium (SiGe) power heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature and high stage-temperature of 120°C with junction temperature over 160°C) are reported in this work. SiGe power HBTs with total emitter area of ~ 1460 μm2 are fabricated in a commercial BiCMOS process, and irradiated with proton at different fluences from 1 × 1012 p/cm2 to 5 × 1013 p/cm2. Experimental characterizations are conducted for pre- and post-radiation devices at room temperature, cryogenic temperature and high temperature. The results demonstrate that the proton-irradiated SiGe power HBTs are naturally suitable for electronic operations at extreme temperatures. Specifically, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77 K) indicates a significant potential for space applications. In addition, SiGe power HBTs show better tolerance of proton radiation at high temperature of 120°C (junction temperature over 160°C). SiGe power HBTs demonstrate great potential in power amplification for wireless communication systems under severe radiation and extreme temperature environment (cryogenic and high temperatures) even without any intentional radiation hardening.

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Chiu, Shean-Yih, A. F. M. Anwar, and Shangli Wu. "Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 576–81. http://dx.doi.org/10.1557/s1092578300003070.

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Base transit time, τb , in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported. Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, μn, in the neutral base region and the effective electron velocity, Sc, at the edge of base-collector heterojunction. μn and Sc are temperature-dependent parameters. A unity gain cut-off frequency of 10.6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19.1 GHz in GaN/InGaN/GaN DHBTs for a neutral base width of 0.05um. It is also shown that non-stationary transport is not required to study τb for neutral base width in the range of 0.05um for GaN-based HBTs.

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Vizkelethy, G., S. D. Phillips, L. Najafizadeh, and J. D. Cressler. "Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 268, no. 11-12 (June 2010): 2092–98. http://dx.doi.org/10.1016/j.nimb.2010.02.016.

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Wang, Wei-Chou, Hsi-Jen Pan, Kun-Wei Lin, Kuo-Hui Yu, Chin-Chuan Cheng, Chih-Hung Yen, Shiou-Ying Cheng, and Wen-Chau Liu. "Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)." Semiconductor Science and Technology 16, no. 5 (March 27, 2001): 339–44. http://dx.doi.org/10.1088/0268-1242/16/5/310.

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David Theodore, N., and Gordon Tam. "Implant-induced strain-relaxation in SiGe/Si layers." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 1112–13. http://dx.doi.org/10.1017/s0424820100151398.

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SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. SiGe is typically used as an epitaxial base material in HBTs. To obtain extremely high-performance bipolar-transistors it is necessary to reduce the extrinsic base-resistance. This can be done by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however with the use of implantation is that blanket implants have been found to enhance strain-relaxation of SiGe/Si. Strain relaxation will cause the bandgap-difference between Si and SiGe to decrease; this difference is maximum for a strained SiGe layer. The electrical benefits of using SiGe/Si arise largely from the presence of a significant bandgap-difference across the SiGe/Si interface. Strain relaxation reduces this benefit. Furthermore, once misfit or threading dislocations result (during strain-relaxation), the defects can give rise to recombination-generation in depletion regions of the device; high electrical leakage currents result.

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Gnana Prakash, A. P., and N. Pushpa. "Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices." Solid State Phenomena 239 (August 2015): 37–71. http://dx.doi.org/10.4028/www.scientific.net/ssp.239.37.

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Silicon bipolar junction transistors (BJTs), Silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and metal oxide semiconductor (MOS) devices are the key components of BiCMOS integrated circuits. The semiconductor devices need to withstand very high total doses (100’s of Mrad) for reliable operation of electronic circuits for 8-10 years of LHC operation. The study of radiation tolerance of semiconductor devices up to 100 Mrad of total dose takes longer time with conventional 60Co gamma, proton and electron irradiation facilities and the effects due to these radiations are well understood. Hence it is important to study the effects of heavy ion irradiation on various semiconductor devices. The irradiation time decreases with increasing linear energy transfer (LET) of incident radiation and LET increases with atomic number of the impinging ions. But it is essential to understand the mechanism of energy transfer by different heavy ions in semiconductor devices. Therefore, here we give an overview of different heavy ion interactions with Si BJTs, MOSFETs and SiGe HBTs by primarily focusing on the electrical characteristics of these devices before and after ion irradiation. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

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TAN, SHIH-WEI, and SHIH-WEN LAI. "EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AlGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT." Surface Review and Letters 19, no. 04 (July 26, 2012): 1250043. http://dx.doi.org/10.1142/s0218625x12500436.

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Characterization and modeling analysis on both ideality factor of the collector current (η C ) and the base current (η B ) have higher than the excepted values of 1.0 and 2.0, respectively, for npn Al GaN/GaN heterojunction bipolar transistors (HBTs) have been reported. We employ the rapid thermal process annealing (RTP-annealing) to modify the base parasitical Schottky diode (called A-HBTs) after the as-deposited Ni/Au bilayers on the base layer for electrode with no annealing (called N-HBTs) to compare with each other. For a HBT operated in Gummel-plot configuration, experimental and modeling results indicate that the base parasitical Schottky diode (BPSD) causes the base current (I B ) and collector current (I C ) with high ideality factor and raise the base-emitter voltage (V BE ) to higher operation point, and therefore lead to more power consumption. Furthermore, the extended Ebers–Moll equivalent-circuit model together with the extracted device parameters provided simulated results that were in a good agreement with experimental ones.

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Than, Phuc Hong, Tran Thi Tra Vinh, Le Thi My Hanh, Than Quang Tho, Nguyen Vu Anh Quang, and Tran The Son. "Effects of Temperature and Stress on the InGaP/GaAs Heterojunction Phototransistor." Journal of Science and Technology: Issue on Information and Communications Technology 19, no. 6.2 (June 29, 2021): 28. http://dx.doi.org/10.31130/ict-ud.2021.112.

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Although the effects of electrical stress and temperature on the performance of the InGaP/GaAs heterojunction bipolar transistors (HBTs) have been widely studied and reported, little or none was reported for the InGaP/GaAs heterojunction phototransistors (HPTs) in the literature. In this paper, we discuss the temperature-dependent characteristic of InGaP/GaAs HPTs before and after electrical stress and assess the effectiveness of the emitter-ledge passivation, which was found to effectively keep the InGaP/GaAs HBTs from degrading at higher temperature or after an electrical stress. The emitter-ledge passivation is also effective keeping a higher optical gain even at higher temperature. An electrical stress was given to the HPTs by keeping the collector current at 60 mA for 15 min. Since the collector current density as an electrical stress is 24 A/cm2 and much smaller than the stress usually given to smaller HBTs for the stress test, the decreased optical gain was not observed when it was given at room temperature. However, when it was given at 420 K, significant decreases of the current gain and optical gain were observed at any temperature. Nevertheless, the emitter-ledge passivation was found effective in minimizing the decreases of the current gain and optical gain.

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Okada, T., and K. Horio. "Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation." VLSI Design 8, no. 1-4 (January 1, 1998): 437–42. http://dx.doi.org/10.1155/1998/23740.

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By using an energy transport model, we simulate cutoff frequency fT versus collector current density IC characteristics of npn−n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n−-collector thickness and n−-doping densities. It is found that the calculated fT characteristics show double peak behavior when the n−- layer is thick enough and the n−-doping is high enough to allow existence of neutral n−- region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher IC) which is not usually reported experimentally.

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35

Fu, Ssu-I., Shiou-Ying Cheng, and Wen-Chau Liu. "Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments." Superlattices and Microstructures 39, no. 5 (May 2006): 436–45. http://dx.doi.org/10.1016/j.spmi.2005.10.002.

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36

Schultheis, R., N. Bovolon, J. E. M�ller, and P. Zwicknagl. "Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)." International Journal of RF and Microwave Computer-Aided Engineering 10, no. 1 (January 2000): 33–42. http://dx.doi.org/10.1002/(sici)1099-047x(200001)10:1<33::aid-mmce5>3.0.co;2-d.

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37

De Barros, O., B. Le Tron, R. C. Woods, G. Giroult-Matlakowski, G. Vincent, and G. Brémond. "Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS." Applied Surface Science 102 (August 1996): 212–16. http://dx.doi.org/10.1016/0169-4332(96)00051-7.

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38

Chand, Naresh, Tim Henderson, Russ Fischer, William Kopp, Hadis Morkoç, and Lawrence J. Giacoletto. "ApnpAlGaAs/GaAs heterojunction bipolar transistor." Applied Physics Letters 46, no. 3 (February 1985): 302–4. http://dx.doi.org/10.1063/1.95666.

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39

McCarthy, L. S., P. Kozodoy, M. J. W. Rodwell, S. P. DenBaars, and U. K. Mishra. "AlGaN/GaN heterojunction bipolar transistor." IEEE Electron Device Letters 20, no. 6 (June 1999): 277–79. http://dx.doi.org/10.1109/55.767097.

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40

Wu, Ming C., and W. T. Tsang. "Quantum‐switched heterojunction bipolar transistor." Applied Physics Letters 55, no. 17 (October 23, 1989): 1771–73. http://dx.doi.org/10.1063/1.102214.

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41

Persson, Stefan, Mouhine Fjer, Enrique Escobedo-Cousin, Sarah H. Olsen, Bengt Gunnar Malm, Yong-Bin Wang, Per-Erik Hellström, Mikael Östling, and Anthony G. O'Neill. "Strained-Silicon Heterojunction Bipolar Transistor." IEEE Transactions on Electron Devices 57, no. 6 (June 2010): 1243–52. http://dx.doi.org/10.1109/ted.2010.2045667.

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42

Chen, J., T. Won, M. S. Ünlü, H. Morkoç, and D. Verret. "GaAs‐Si heterojunction bipolar transistor." Applied Physics Letters 52, no. 10 (March 7, 1988): 822–24. http://dx.doi.org/10.1063/1.99295.

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43

OKA, TOHRU, KOJI HIRATA, HIDEYUKI SUZUKI, KIYOSHI OUCHI, HIROYUKI UCHIYAMA, TAKAFUMI TANIGUCHI, KAZUHIRO MOCHIZUKI, and TOHRU NAKAMURA. "SMALL-SCALE InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED AND LOW-POWER INTEGRATED-CIRCUIT APPLICATIONS." International Journal of High Speed Electronics and Systems 11, no. 01 (March 2001): 115–36. http://dx.doi.org/10.1142/s0129156401000800.

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Small-scale InGaP/GaAs heterojunction bipolar transistors (HBTs) with high-speed as well as low-current operation are demonstrated. To reduce the emitter size SE and the base-collector capacitance CBC simultaneously, the HBTs are fabricated by using WSi/Ti as the base electrode and by burying SiO 2 in the extrinsic collector region. WSi/Ti metals simplify and facilitate processing to fabricate small base electrodes, and the buried SiO 2 reduces the parasitic CBC under the base electrode. The cutoff frequency fT of 156 GHz and the maximum oscillation frequency f max of 255 GHz were obtained at a collector current Ic of 3.5 mA for the HBT with SE of 0.5 μ m ×4.5 μ m , and fT of 114 GHz and f max of 230 GHz were obtained at IC of 0.9 mA for the HBT with SE of 0.25 μ m ×1.5 μ m . A 1/8 static frequency divider operated at a maximum toggle frequency of 39.5 GHz with a power consumption per flip-flop of 190 mW. A transimpedance amplifier provides a gain of 46.5 dB·Ω with a bandwidth of 41.6 GHz at a power consumption of 150 mW. These results indicate the great potential of our HBTs for high-speed. low power integrated circuit applications.

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SUGAHARA, HIROHIKO. "GaAs HBT RELIABILITY." International Journal of High Speed Electronics and Systems 05, no. 03 (September 1994): 381–93. http://dx.doi.org/10.1142/s0129156494000164.

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This paper reviews recent studies on the reliability of GaAs heterojunction bipolar transistors (HBTs), mainly carbon-doped-base AlGaAs/GaAs HBTs, and discusses degradation modes in these devices. The carbon-doped-base AlGaAs/GaAs HBTs generally have more stable current-voltage characteristics than beryllium-doped-base ones. However, even carbon-doped-base HBTs show a decrease in the current gain due to an anomalous increase in the base current that occurs under high-current stress. The estimated ohmic contacts of these HBTs show that their stability is high enough under actual operating conditions. Bias stress testing has shown that two factors dominate the reliability of carbon-doped-base AlGaAs/GaAs HBTs: the material and the passivation. HBTs with an AlGaAs surface passivation layer on the extrinsic base region exhibit a longer life than those without one. The base current ideality factor of short-lived HBTs increases to larger than 2 during bias stress testing, suggesting that the origin of the excess base current cannot be simply explained by a space-charge recombination process. The reported activation energies are distributed around 0.5 eV, which is almost the same as those for AlGaAs/GaAs laser diodes. Cross-sectional TEM analysis has revealed that current-induced defects are formed in the base layer. The indium-incorporated-base HBTs show a median life of longer than 15,000 hours at a junction temperature of 215°C with a collector current density of 50 kA/cm 2, implying that GaAs HBTs have sufficient reliability for very-high-speed communication systems.

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RODWELL, M. J. W., M. URTEAGA, Y. BETSER, T. MATHEW, P. KRISHNAN, D. SCOTT, S. JAGANATHAN, et al. "SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs." International Journal of High Speed Electronics and Systems 11, no. 01 (March 2001): 159–215. http://dx.doi.org/10.1142/s0129156401000824.

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High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer processes, or -if contact resistivity is greatly reduced -by reducing the width of the base Ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high f max and high gains in mm-wave ICs. Logic gate delays are primarily set by depletion-layer charging times, and neither fτ nor f max is indicative of logic speed. For high speed logic, epitaxial layers must be thinned, emitter and collector junction widths reduced, current density increased, and emitter parasitic resistance decreased. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency f max is 1.1 THz. Transferred-substrate HBTs have obtained 295 GHz f τ . Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz, 66 GHz master-slave flip-flops, and 18 GHz clock rate Δ-Σ ADCs.

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46

Chung-Er Huang, Chien-Ping Lee, Hsien-Chang Liang, and Ron-Ting Huang. "Critical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)." IEEE Electron Device Letters 23, no. 10 (October 2002): 576–78. http://dx.doi.org/10.1109/led.2002.803758.

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47

Chen, Tzu-Pin, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, and Wen-Chau Liu. "On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)." Solid-State Electronics 53, no. 2 (February 2009): 190–94. http://dx.doi.org/10.1016/j.sse.2008.11.003.

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Lunardi, L. M., V. D. Archer, R. G. Swartz, J. M. Kuo, R. F. Kopf, R. J. Malik, and P. R. Smith. "High speed linear array circuit with AlAaAs/GaAs heterojunction bipolar transistors (HBTs)." Electronics Letters 26, no. 15 (1990): 1157. http://dx.doi.org/10.1049/el:19900748.

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Ryum, B. R., and Ibrahim M. Abdel-Motaleb. "A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)." Solid-State Electronics 33, no. 7 (July 1990): 869–80. http://dx.doi.org/10.1016/0038-1101(90)90068-p.

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50

Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

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Journal articles on the topic 'Heterojunction bipolar transistor (HBT’s)'

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