Relevant bibliographies by topics / Heterostructures – Thermal properties

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Heterostructures – Thermal properties'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Heterostructures – Thermal properties"

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Ren, Kai, Ruxin Zheng, Peng Xu, et al. "Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation." Nanomaterials 11, no. 9 (2021): 2236. http://dx.doi.org/10.3390/nano11092236.

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After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stabil
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Wang, Mingchao, Guangping Zhang, Huisheng Peng, and Cheng Yan. "Energetic and thermal properties of tilt grain boundaries in graphene/hexagonal boron nitride heterostructures." Functional Materials Letters 08, no. 03 (2015): 1550038. http://dx.doi.org/10.1142/s1793604715500381.

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Graphene/hexagonal boron nitride (G/h-BN) heterostructure has attracted tremendous research efforts owing to its great potential for applications in nanoscale electronic devices. In such hybrid materials, tilt grain boundaries (GBs) between graphene and h-BN grains may have unique physical properties, which have not been well understood. Here we have conducted non-equilibrium molecular dynamics simulations to study the energetic and thermal properties of tilt GBs in G/h-BN heterostructures. The effect of misorientation angles of tilt GBs on both GB energy and interfacial thermal conductance ar
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Golan, G., A. Axelevitch, and Jacob Azoulay. "Properties investigation of thin films photovoltaic hetero-structures." World Journal of Engineering 11, no. 3 (2014): 233–38. http://dx.doi.org/10.1260/1708-5284.11.3.233.

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This paper presents an experimental investigation of photovoltaic (PV) properties in heterostructures consisting of indium oxide and amorphous silicon thin films, grown on a single crystalline p-type silicon and polyimide flexible substrates. Both thin films: In2O3 and a-Si were deposited by magnetron sputtering. Such heterostructure thin film systems are attractive because of their ability to convert solar energy into electrical one. Grown Heterostructures films were treated by simultaneous influence of an electron beam and high energetic photons with energy more than 1.5 eV in the so called
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Yao, Wenjuan, and Lei Fan. "Defects in Graphene/h-BN Planar Heterostructures: Insights into the Interfacial Thermal Transport Properties." Nanomaterials 11, no. 2 (2021): 500. http://dx.doi.org/10.3390/nano11020500.

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In this work, the defects (local stress generated) induce the formation of graphene/h-BN planar heterostructure (Gr-hBN-PH) to form "unsteady structure". Then, the coupling effects of external field (heat flow direction, strain and temperature field) and internal field (defect number, geometry shape and interfacial configuration) on the interface thermal conductivity (ITC) of Gr-hBN-PH were studied. The results show phonon transmission is less affected by compression deformation under the action of force-heat-defect coupling, while phonon transmission of heterostructure is more affected by ten
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Qin, Huasong, Qing-Xiang Pei, Yilun Liu, and Yong-Wei Zhang. "The mechanical and thermal properties of MoS2–WSe2 lateral heterostructures." Physical Chemistry Chemical Physics 21, no. 28 (2019): 15845–53. http://dx.doi.org/10.1039/c9cp02499a.

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Кулеев, И. И. "Влияние фокусировки фононов на теплопроводность гетероструктур GaAs/AlGaAs при низких температурах". Физика твердого тела 61, № 3 (2019): 426. http://dx.doi.org/10.21883/ftt.2019.03.47231.271.

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AbstractThe effect of the anisotropy of elastic properties on the thermal conductivity of GaAs/AlGaAs heterostructures at low temperatures is investigated. The effect of phonon focusing on the anisotropy of the thermal conductivity is analyzed. The parameters of the specular reflection of phonons from the boundaries of the heterostructures, which characterize the heat flux in the Knudsen mode of the phonon gas flow, are determined. The angular dependences of the mean free paths of phonons of different polarizations, which determine the thermal conductivity anisotropy of heterostructures with o
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Shiojima, Kenji, and Naoteru Shigekawa. "Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures." Japanese Journal of Applied Physics 43, no. 1 (2004): 100–105. http://dx.doi.org/10.1143/jjap.43.100.

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Majid, Farzana, Abdul Malik, Sadia Ata, et al. "Structural and Optical Properties of Multilayer Heterostructure of CdTe/CdSe Thin Films." Zeitschrift für Physikalische Chemie 233, no. 9 (2019): 1215–31. http://dx.doi.org/10.1515/zpch-2018-1339.

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Abstract CdTe/CdSe multilayer heterostructures thin films were prepared by thermal evaporation method. The CdTe/CdSe layers deposited on glass substrate and effects of annealing temperature on optical and structural properties of thin films were investigated. The XRD analysis revealed that CdTe and CdSe were in cubic (111) and hexagonal (100) forms. By increasing the annealing temperature, intensity of XRD peaks increased for multilayer heterostructures. Band alignment in heterostructures of CdTe/CdSe was of type II. Energy band gaps values for CdTe/CdSe multilayer heterostructures increased w
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Juntunen, Taneli, Tomi Koskinen, Vladislav Khayrudinov, et al. "Thermal conductivity suppression in GaAs–AlAs core–shell nanowire arrays." Nanoscale 11, no. 43 (2019): 20507–13. http://dx.doi.org/10.1039/c9nr06831g.

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Lin, C. H., R. J. Hwu, and L. P. Sadwick. "Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy." Journal of Materials Research 16, no. 11 (2001): 3266–73. http://dx.doi.org/10.1557/jmr.2001.0450.

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Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterized through x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAs la
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Dissertations / Theses on the topic "Heterostructures – Thermal properties"

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co
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Gerleman, Ian Gregory. "Thermo-electric properties of two-dimensional silicon based heterostructures." Thesis, University of Warwick, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343787.

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"Studies on thermal stabilities of transparent dielectrics/ZnO heterostructures." 2007. http://library.cuhk.edu.hk/record=b5893211.

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Wang, Ranshi = 透明电解质/氧化锌异质结热稳定性的研究 / 王然石.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2007.<br>Includes bibliographical references (leaves 130-134).<br>Abstracts in English and Chinese.<br>Wang, Ranshi = Tou ming dian jie zhi/yang hua xin yi zhi jie re wen ding xing de yan jiu / Wang Ranshi.<br>Chapter I. --- Abstract<br>Chapter II. --- Acknowledgement<br>Chapter III. --- Table of contents<br>Chapter IV. --- List of figures<br>Chapter V. --- List of tables<br>Chapter 1 --- Introduction<br>Chapter 1.1 --- Motivations<br>Chapter 1.2 --- Outline of thesis<br>Chapter 2 --- Experimental C
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Juey, Liu-Ting, and 墜律廷. "A study on the properties of ITO/CuPc/C60/Ag heterostructures prepared by thermal evaporation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/00070793244284493078.

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碩士<br>中原大學<br>應用物理研究所<br>95<br>Small-molecule organic photovoltaic cells (OPVCs) with a heterostructure of indium tin oxide(ITO) /copper phthalocyanine (CuPc)/C60/metal were fabricated by physical vapor deposition (under vacuum level of about 2�e10-5 torr) at different source temperatures Tsou (in between 330-360℃ for CuPc; and 370-460℃ for C60) and substrate temperatures Tsub (in between 30 and 90℃). The physical properties of these as-deposited organic thin films including surface morphology, structural information, and electrical and optical properties were measured ( in layer by layer seq
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Ke, Yu-Chun, and 柯郁淳. "An Investigation of Thermal and Mechanical Properties of Two Dimensional Graphene-Boron Nitride Heterostructures by Atomistic Simulations." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/e6844f.

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碩士<br>國立臺灣大學<br>應用力學研究所<br>105<br>In this study, we investigate thermal and mechanical properties of two dimensional graphene-boron nitride heterostructures by molecular dynamics simulations with the Tersoff-type BCN potential function. The composition ratio of the hybrid graphene-boron nitride nanoribbon is defined as the width of the graphene nanoribbon divided by the width of the whole hybrid nanoribbon, and it is denoted by w_Gr. In terms of thermal properties, we mainly investigate the effects of composition ratios, chiral orientations, sizes, system temperatures and defects on the therma
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Hsiu-MingHsu and 許修銘. "Investigation on the Fabrication and Properties of CuO Nanowires and Zn/CuO Nanowire Heterostructures with Thermal Oxidation." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/76729658850670361783.

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碩士<br>國立成功大學<br>材料科學及工程學系<br>104<br>In this thesis, cupric oxide nanowires were successfully grown through the thermal oxidation of copper substrates in a three-zone horizontal tube furnace over temperatures ranging from 300 to 800℃. Processing parameters, such as annealing temperature, oxidation time, pressure and prefabrication of the substrates were varied and investigated in terms of their influence on the morphology, aspect ratio and number density of the nanowires. Scanning electron microscopy studies showed that these nanowires controllably ranged in diameter from 40 to 400nm with lengt
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Book chapters on the topic "Heterostructures – Thermal properties"

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Burian, E., D. Pogany, T. Lalinský, Š. Haščík, and Ž. Mozolová. "Simulation and Characterisation of Thermal Properties of GaAs Micromachined Power Sensor Microsystems." In Heterostructure Epitaxy and Devices — HEAD’97. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_55.

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Yacoubi, N., and H. Mani. "Determination of Optical and Thermal Properties of the GaAsSb/GaAs Heterostructure by Photothermal Deflection Spectroscopy." In Photoacoustic and Photothermal Phenomena II. Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-540-46972-8_43.

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Yang, Fan. "Thermal transport properties of two-dimensional materials." In Synthesis, Modeling, and Characterization of 2D Materials, and Their Heterostructures. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-818475-2.00003-9.

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Conference papers on the topic "Heterostructures – Thermal properties"

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Sahu, Subhranshu Sekhar, and Bijay Kumar Sahoo. "Pyroelectricity and thermal properties of InGaN/GaN heterostructures." In NATIONAL CONFERENCE ON ADVANCED MATERIALS AND NANOTECHNOLOGY - 2018: AMN-2018. Author(s), 2018. http://dx.doi.org/10.1063/1.5052070.

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Gaal, P., R. Bauer, M. Sander, T. Slobodskyy, and W. Hansen. "Elastic and thermal properties of strain-tailored air-gap heterostructures." In CLEO: Science and Innovations. OSA, 2017. http://dx.doi.org/10.1364/cleo_si.2017.sw4o.6.

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Liang, Ting, Ping Zhang, Peng Yuan, Man Zhou, and Siping Zhai. "Interfacial Thermal Conductance and Thermal Rectification Across In-Plane Graphene/h-BN Heterostructures With Different Bonding Types." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-4159.

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Abstract The in-plane graphene/hexagonal boron nitride (Gr/h-BN) heterostructures have received extensive attention in recent years due to their excellent physical properties and the development potential of next-generation nanoelectronic devices. Generally, different bonding types between Gr and h-BN are considered in different non-equilibrium molecular dynamics (NEMD) simulations studies. However, which type of bonding is most conducive to interface thermal transport is still very confusing. In this work, we investigate the interfacial thermal conductance (ITC) and the thermal rectification
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Zheng, Kai, Huaiyu Ye, Guoqi Zhang, et al. "First principle design of CdS/germanene heterostructures with tunable electronic and transport properties." In 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2017. http://dx.doi.org/10.1109/eurosime.2017.7926284.

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Yang, Qun, Chunjian Tan, Huaiyu Ye, Xianping Chen, and Guoqi Zhang. "The intriguing electronic and optical properties modulation in blue phosphorene/g-III-nitrides heterostructures." In 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2017. http://dx.doi.org/10.1109/eurosime.2017.7926299.

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Tan, Chunjian, Qun Yang, Huaiyu Ye, Xianping Chen, and G. Q. Zhang. "An AlAs/germanene heterostructure with outstanding tunability of electronic properties." In 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2017. http://dx.doi.org/10.1109/eurosime.2017.7926298.

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Li, Bin, Anastassios Mavrokefalos, Jianhua Zhou, et al. "Nano-Imprint Patterning of Nanowire Structures for Interconnect Study." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-82644.

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A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect line
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Gillet, Jean-Numa, Yann Chalopin, and Sebastian Volz. "Thermal Design of Highly-Efficient Thermoelectric Materials With Atomic-Scale Three-Dimensional Phononic Crystals." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-43538.

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Owing to their thermal insulating properties, superlattices have been extensively studied. A breakthrough in the performance of thermoelectric devices was achieved by using superlattice materials. The problem of those nanostructured materials is that they mainly affect heat transfer in only one direction. In this paper, the concept of canceling heat conduction in the three spatial directions by using atomic-scale three-dimensional (3D) phononic crystals is explored. A period of our atomic-scale 3D phononic crystal is made up of a large number of diamond-like cells of silicon atoms, which form
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