Relevant bibliographies by topics / Heterostructures – Thermal properties

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Heterostructures – Thermal properties'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Heterostructures – Thermal properties"

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Ren, Kai, Ruxin Zheng, Peng Xu, Dong Cheng, Wenyi Huo, Jin Yu, Zhuoran Zhang, and Qingyun Sun. "Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation." Nanomaterials 11, no. 9 (August 30, 2021): 2236. http://dx.doi.org/10.3390/nano11092236.

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After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stability at 300 K. In addition, the Hf2CO2/MN heterostructure has I-type band alignment structure, which can be used as a promising light-emitting device material. The charge transfer between the Hf2CO2 and AlN (or GaN) monolayers is 0.1513 (or 0.0414) |e|. The potential of Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures decreases by 6.445 eV and 3.752 eV, respectively, across the interface. Furthermore, both Hf2CO2/AlN and Hf2CO2/GaN heterostructures have remarkable optical absorption capacity, which further shows the application prospect of the Hf2CO2/MN heterostructure. The study of this work provides theoretical guidance for the design of heterostructures for use as photocatalytic and photovoltaic devices.
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Wang, Mingchao, Guangping Zhang, Huisheng Peng, and Cheng Yan. "Energetic and thermal properties of tilt grain boundaries in graphene/hexagonal boron nitride heterostructures." Functional Materials Letters 08, no. 03 (June 2015): 1550038. http://dx.doi.org/10.1142/s1793604715500381.

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Graphene/hexagonal boron nitride (G/h-BN) heterostructure has attracted tremendous research efforts owing to its great potential for applications in nanoscale electronic devices. In such hybrid materials, tilt grain boundaries (GBs) between graphene and h-BN grains may have unique physical properties, which have not been well understood. Here we have conducted non-equilibrium molecular dynamics simulations to study the energetic and thermal properties of tilt GBs in G/h-BN heterostructures. The effect of misorientation angles of tilt GBs on both GB energy and interfacial thermal conductance are investigated.
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Golan, G., A. Axelevitch, and Jacob Azoulay. "Properties investigation of thin films photovoltaic hetero-structures." World Journal of Engineering 11, no. 3 (June 1, 2014): 233–38. http://dx.doi.org/10.1260/1708-5284.11.3.233.

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This paper presents an experimental investigation of photovoltaic (PV) properties in heterostructures consisting of indium oxide and amorphous silicon thin films, grown on a single crystalline p-type silicon and polyimide flexible substrates. Both thin films: In2O3 and a-Si were deposited by magnetron sputtering. Such heterostructure thin film systems are attractive because of their ability to convert solar energy into electrical one. Grown Heterostructures films were treated by simultaneous influence of an electron beam and high energetic photons with energy more than 1.5 eV in the so called vacuum photo-thermal processing (VPP).Silicon samples of 100 Ω/sq and 45 Ω/sq were selected as substrates. Thin films deposition was done in argon atmosphere by DC magnetron sputtering.It is shown that:Open circuit voltage of the proposed structure may reach up to ~ 0.35 V,Short circuit current was of no more then 10-7 A,Polyimide materials may be used as substrates for PV thin film deposition structures,VPP dramatically varies the photovoltaic properties of the heterostructure
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Yao, Wenjuan, and Lei Fan. "Defects in Graphene/h-BN Planar Heterostructures: Insights into the Interfacial Thermal Transport Properties." Nanomaterials 11, no. 2 (February 16, 2021): 500. http://dx.doi.org/10.3390/nano11020500.

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In this work, the defects (local stress generated) induce the formation of graphene/h-BN planar heterostructure (Gr-hBN-PH) to form "unsteady structure". Then, the coupling effects of external field (heat flow direction, strain and temperature field) and internal field (defect number, geometry shape and interfacial configuration) on the interface thermal conductivity (ITC) of Gr-hBN-PH were studied. The results show phonon transmission is less affected by compression deformation under the action of force-heat-defect coupling, while phonon transmission of heterostructure is more affected by tensile deformation. The non-harmonic interaction of the atoms in the composite system is strengthened, causing the softening of high-frequency phonons. The greater reduction of thermal transport at the interface of heterostructures will be. The interface bonding morphology plays a significant role on the ITC of the Gr-hBN-PH. The relationship between structure and properties in the low dimension is analyzed from the perspective of defect energy. It is helpful for us to understand the physical mechanism of low-dimensional structure, realize multiple structural forms, and even explore new uses.
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Qin, Huasong, Qing-Xiang Pei, Yilun Liu, and Yong-Wei Zhang. "The mechanical and thermal properties of MoS2–WSe2 lateral heterostructures." Physical Chemistry Chemical Physics 21, no. 28 (2019): 15845–53. http://dx.doi.org/10.1039/c9cp02499a.

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Кулеев, И. И. "Влияние фокусировки фононов на теплопроводность гетероструктур GaAs/AlGaAs при низких температурах." Физика твердого тела 61, no. 3 (2019): 426. http://dx.doi.org/10.21883/ftt.2019.03.47231.271.

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AbstractThe effect of the anisotropy of elastic properties on the thermal conductivity of GaAs/AlGaAs heterostructures at low temperatures is investigated. The effect of phonon focusing on the anisotropy of the thermal conductivity is analyzed. The parameters of the specular reflection of phonons from the boundaries of the heterostructures, which characterize the heat flux in the Knudsen mode of the phonon gas flow, are determined. The angular dependences of the mean free paths of phonons of different polarizations, which determine the thermal conductivity anisotropy of heterostructures with orientations {100} and {110}, are calculated.
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Shiojima, Kenji, and Naoteru Shigekawa. "Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures." Japanese Journal of Applied Physics 43, no. 1 (January 13, 2004): 100–105. http://dx.doi.org/10.1143/jjap.43.100.

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Majid, Farzana, Abdul Malik, Sadia Ata, Zaheer Hussain, Ismat Bibi, Munawar Iqbal, Muhammad Rafay, and Hina Rizvi. "Structural and Optical Properties of Multilayer Heterostructure of CdTe/CdSe Thin Films." Zeitschrift für Physikalische Chemie 233, no. 9 (August 27, 2019): 1215–31. http://dx.doi.org/10.1515/zpch-2018-1339.

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Abstract CdTe/CdSe multilayer heterostructures thin films were prepared by thermal evaporation method. The CdTe/CdSe layers deposited on glass substrate and effects of annealing temperature on optical and structural properties of thin films were investigated. The XRD analysis revealed that CdTe and CdSe were in cubic (111) and hexagonal (100) forms. By increasing the annealing temperature, intensity of XRD peaks increased for multilayer heterostructures. Band alignment in heterostructures of CdTe/CdSe was of type II. Energy band gaps values for CdTe/CdSe multilayer heterostructures increased with respect to bulk compounds. During emission, red and blue shifts are observed in visible region in photoluminescence spectrum of CdTe/CdSe samples. Due to better crystallinity of multilayer thin film, 1LO, 2LO and 3LO phonon modes were observed in Raman spectrum.
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Juntunen, Taneli, Tomi Koskinen, Vladislav Khayrudinov, Tuomas Haggren, Hua Jiang, Harri Lipsanen, and Ilkka Tittonen. "Thermal conductivity suppression in GaAs–AlAs core–shell nanowire arrays." Nanoscale 11, no. 43 (2019): 20507–13. http://dx.doi.org/10.1039/c9nr06831g.

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Lin, C. H., R. J. Hwu, and L. P. Sadwick. "Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy." Journal of Materials Research 16, no. 11 (November 2001): 3266–73. http://dx.doi.org/10.1557/jmr.2001.0450.

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Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterized through x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAs layer are stacking faults or microtwins, and they directly correlated with the islandlike surface morphology of the GaAs overlayer. The composition profiles of the TmP/GaAs heterostructure were measured by secondary ion mass spectrometry. The reason for surface segregation of Tm and Ga atoms is discussed and is primarily due to their higher diffusion coefficient near the surface as compared to that in the TmP epilayer bulk. The thermally stable characters of the TmP/GaAs heterostructures allow them to be promising candidates in various device applications.
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Dissertations / Theses on the topic "Heterostructures – Thermal properties"

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and complicated valence band structure involved. Germanium is known to have the largest hole mobility of all the known semiconductors and is considered most suitable to fabricate high speed p-type devices. Moreover, it is also possible to integrate germanium and its alloy (Si1_zGex ) into the existing silicon technology. With the use of sophisticated growth techniques it has been possible to grow epitaxial layers of silicon and germanium on Si1_zGex alloy layers grown on silicon substrates. In tills thesis we investigate in detail the electrical properties of p-type germanium and n-type silicon thin films grown by these techniques. It is important to do a comparative study of transport in these two systems not only to understand the physics involved but also to study their compatibility in complementary field effect devices (cMODFET). The studies reported in this thesis lay emphasis both on the low and high field transport properties of these systems. We report experimental data for the maximum room temperature mobility of holes achieved m germanium thin films grown on Si1_zGex layers that is comparable to the mobility of electrons in silicon films. We also report experiments performed to study the high field degradation of carrier mobility due to "carrier heating" in these systems. We also report studies on the effect of lattice heating on mobility of carriers as a function of applied electric field. To understand the physics behind the observed phenomenon, we model our data based on the existing theories for low and high field transport. We report complete numerical calculations based on these theories to explain the observed qualitative difference in the transport properties of p-type germanium and ii-type silicon systems. The consistency between the experimental data and theoretical modeling reported in this work is very satisfactory.
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Gerleman, Ian Gregory. "Thermo-electric properties of two-dimensional silicon based heterostructures." Thesis, University of Warwick, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343787.

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"Studies on thermal stabilities of transparent dielectrics/ZnO heterostructures." 2007. http://library.cuhk.edu.hk/record=b5893211.

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Wang, Ranshi = 透明电解质/氧化锌异质结热稳定性的研究 / 王然石.
Thesis (M.Phil.)--Chinese University of Hong Kong, 2007.
Includes bibliographical references (leaves 130-134).
Abstracts in English and Chinese.
Wang, Ranshi = Tou ming dian jie zhi/yang hua xin yi zhi jie re wen ding xing de yan jiu / Wang Ranshi.
Chapter I. --- Abstract
Chapter II. --- Acknowledgement
Chapter III. --- Table of contents
Chapter IV. --- List of figures
Chapter V. --- List of tables
Chapter 1 --- Introduction
Chapter 1.1 --- Motivations
Chapter 1.2 --- Outline of thesis
Chapter 2 --- Experimental Conditions and Techniques Used
Chapter 2.1 --- Sample preparation
Chapter 2.1.1 --- Radio frequency magnetic sputtering
Chapter 2.1.2 --- ITO glass
Chapter 2.1.3 --- Thermal evaporation
Chapter 2.1.4 --- Thermal annealing
Chapter 2.2 --- Optical characterization of ZnO
Chapter 2.2.1 --- Photoluminescence (PL) measurement
Chapter 2.2.2 --- SEM and cathodoluminescence spectroscopy
Chapter 2.3 --- Time-of-FIight Secondary Ion Mass Spectroscopy (TOF-SIMS )
Chapter 2.4 --- Electrical measurements
Chapter 3 --- Calibrations
Chapter 3.1 --- Sample Thickness
Chapter 3.2 --- Calibrations of cathodeluminescence measurements
Chapter 3.2.1 --- Probe current and specimen current
Chapter 3.2.2 --- Sample uniformity in CL measurement
Chapter 3.2.3 --- Mirror position
Chapter 3.2.4 --- Non-linear relation between CL emission and current
Chapter 3.2.5 --- CL band-edge emission stability
Chapter 3.2.6 --- Effect of magnification
Chapter 3.2.7 --- Effect of electron beam shift
Chapter 3.2.8 --- Conclusions
Chapter 3.3 --- C-V measurement
Chapter 4 --- Experimental Results and Data Analysis
Chapter 4.1 --- Optical properties
Chapter 4.1.1 --- Luminescence of ZnO
Chapter 4.1.2 --- Light emitting thermal stability of A10x (MgO) capped ZnO film
Chapter 4.1.2.1 --- Emission degradations in annealing treatment by PL
Chapter 4.1.2.2 --- Evidence about the interface degradation
Chapter 4.1.2.3 --- CL studies of the emission from sample surface
Chapter 4.2 --- Secondary Ion Mass Spectroscopy (SIMS) studies of AIOx-capped ZnO
Chapter 4.2.1 --- Data processing
Chapter 4.2.2 --- Diffusion width
Chapter 4.3 --- Simulation of Zn out diffusion to the dielectric layer
Chapter 4.3.1 --- Structure and assumptions
Chapter 4.3.2 --- Calculations of diffusion by Fick's Law
Chapter 4.3.3 --- Simulation of PL reduction from diffusion
Chapter 4.3.4 --- Short-time PL
Chapter 4.4 --- Simulation of defects generation in emission reduction process
Chapter 4.4.1 --- Some calculations of continuity equation
Chapter 4.4.2 --- First order equation for defect generation
Chapter 4.5 --- Electrical measurements
Chapter 4.5.1 --- Theory of C-V measurement for MOS structure
Chapter 4.5.1.1 --- MOS Structure
Chapter 4.5.1.2 --- Discussions about surface charge and energy level in C-V experiments of MOS
Chapter 4.5.1.3 --- Useful formulations
Chapter 4.5.2 --- Experimental results of C-V and parameter extraction
Chapter 4.5.2.1 --- Effect of series resistance correction
Chapter 4.5.2.2 --- Effect of thermal annealing to C-V curves on dielectric/ZnO/ITO
Chapter 4.5.2.3 --- Doping concentration (ND)
Chapter 4.5.2.4 --- Discussion about the fixed and mobile charge
Chapter 4.5.3 --- Simulation of C-V relation in dielectric/ZnO
Chapter 4.5.4 --- Current-voltage (I-V) measurements
Chapter 4.5.5 --- Conductance-voltage measurements (G-V) and interface trap density
Chapter 4.5.6 --- DLTS measurements for extracting interface trap density
Chapter 5 --- Discussions and Conclusion
Chapter 5.1 --- Mechanism
Chapter 5.2 --- Conclusions
Chapter 5.3 --- Future plan
Chapter 6 --- References
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Juey, Liu-Ting, and 墜律廷. "A study on the properties of ITO/CuPc/C60/Ag heterostructures prepared by thermal evaporation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/00070793244284493078.

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碩士
中原大學
應用物理研究所
95
Small-molecule organic photovoltaic cells (OPVCs) with a heterostructure of indium tin oxide(ITO) /copper phthalocyanine (CuPc)/C60/metal were fabricated by physical vapor deposition (under vacuum level of about 2�e10-5 torr) at different source temperatures Tsou (in between 330-360℃ for CuPc; and 370-460℃ for C60) and substrate temperatures Tsub (in between 30 and 90℃). The physical properties of these as-deposited organic thin films including surface morphology, structural information, and electrical and optical properties were measured ( in layer by layer sequence) by atomic force microscopy, X-ray diffraction, current-voltage characteristics, and electronic absorption spectra. At first, the effects of different deposition conditions ( Tsou and Tsub ) on growth rate and film-thickness of these organic thin films were examined. Then, the physical properties of each organic thin film as well as the interface properties of ITO/CuPc and CuPc/ C60 were studied with respect to Tsou, Tsub, and film-thickness. The short circuit current Isc and open circuit voltage Voc for this ITO/CuPc/ C60/metal hetero-structure under illumination were performed, and the spectral response of Isc was analyzed. Finally, a mechanism for the transport and separation of the photo-generated excitons was discussed
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Ke, Yu-Chun, and 柯郁淳. "An Investigation of Thermal and Mechanical Properties of Two Dimensional Graphene-Boron Nitride Heterostructures by Atomistic Simulations." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/e6844f.

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碩士
國立臺灣大學
應用力學研究所
105
In this study, we investigate thermal and mechanical properties of two dimensional graphene-boron nitride heterostructures by molecular dynamics simulations with the Tersoff-type BCN potential function. The composition ratio of the hybrid graphene-boron nitride nanoribbon is defined as the width of the graphene nanoribbon divided by the width of the whole hybrid nanoribbon, and it is denoted by w_Gr. In terms of thermal properties, we mainly investigate the effects of composition ratios, chiral orientations, sizes, system temperatures and defects on the thermal conductivity. Firstly, we study the thermal conductivity of hybrid nanoribbons with different composition ratios. The results show that thermal conductivity of zigzag hybrid nanoribbons increases almost monotonically as the composition ratio raises, while the thermal conductivity of armchair ones with small composition ratios (w_Gr is in the range of 0.1 to 0.4) is lower than that of pristine boron nitride nanoribbons. The further study shows that the thermal conductivity of hybrid nanoribbons with small composition ratios in the additional 9 chiral orientations is lower than that of pristine boron nitride nanoribbons as well. In addition, size effects and system temperatures have a significant impact on the thermal conductivity. Besides, we also explore the effects of vacancy defects and grain boundary defects on the thermal conductivity. In the case of vacancy defects, the conditions for deleted boron, carbon and nitrogen atoms are considered respectively. The results show that the thermal conductivity will drop drastically when hybrid nanoribbons have vacancy defects. Under the same concentration of deleted atoms, carbon atom vacancy defects result in the greatest decrease of the thermal conductivity, and the influence of boron atom vacancy defects on thermal properties is similar to nitrogen atom vacancy defects. In the case of grain boundary defects, we investigate thermal properties of the hybrid graphene grain boundary-boron nitride nanoribbon. The thermal conductivity decreases significantly because of the existence of grain boundaries and the generation of folding structures. Hence hybrid graphene grain boundary-boron nitride nanoribbons have the higher thermomutability. In terms of mechanical properties, we analyze zigzag hybrid nanoribbons with different composition ratios. The results reveal that Young''s modulus increases as the composition ratio raises, and the fracture strain generally has a tendency to decrease as the composition ratio raises. However, there is no relationship between the fracture strength and the composition ratio.
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Hsiu-MingHsu and 許修銘. "Investigation on the Fabrication and Properties of CuO Nanowires and Zn/CuO Nanowire Heterostructures with Thermal Oxidation." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/76729658850670361783.

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碩士
國立成功大學
材料科學及工程學系
104
In this thesis, cupric oxide nanowires were successfully grown through the thermal oxidation of copper substrates in a three-zone horizontal tube furnace over temperatures ranging from 300 to 800℃. Processing parameters, such as annealing temperature, oxidation time, pressure and prefabrication of the substrates were varied and investigated in terms of their influence on the morphology, aspect ratio and number density of the nanowires. Scanning electron microscopy studies showed that these nanowires controllably ranged in diameter from 40 to 400nm with lengths of up to 20μm and the varying density was a function of the growth temperature and reaction time. High resolution transmission electron microscopy and x-ray diffraction studies were conducted to further identify the chemical composition, crystal structure and growth direction of the nanowires. Additionally, the growth mechanism was also proposed. In the modifying experiment, “2-step annealing” was carried out to modify the chemical composition of the nanowires. Zn/CuO nanowire heterostructures were synthesized successfully through the reaction between Zn and the nanowires. Physical properties including photoluminescence, magnetic property, field emission and electrical property were measured and studied. The results demonstrated that copper oxide nanowires are attractive choices for future engineering applications and Zn/CuO nanowire heterostructures possess interesting property changes.
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Book chapters on the topic "Heterostructures – Thermal properties"

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Burian, E., D. Pogany, T. Lalinský, Š. Haščík, and Ž. Mozolová. "Simulation and Characterisation of Thermal Properties of GaAs Micromachined Power Sensor Microsystems." In Heterostructure Epitaxy and Devices — HEAD’97, 281–84. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_55.

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Yacoubi, N., and H. Mani. "Determination of Optical and Thermal Properties of the GaAsSb/GaAs Heterostructure by Photothermal Deflection Spectroscopy." In Photoacoustic and Photothermal Phenomena II, 173–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-540-46972-8_43.

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Yang, Fan. "Thermal transport properties of two-dimensional materials." In Synthesis, Modeling, and Characterization of 2D Materials, and Their Heterostructures, 37–55. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-818475-2.00003-9.

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Conference papers on the topic "Heterostructures – Thermal properties"

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Sahu, Subhranshu Sekhar, and Bijay Kumar Sahoo. "Pyroelectricity and thermal properties of InGaN/GaN heterostructures." In NATIONAL CONFERENCE ON ADVANCED MATERIALS AND NANOTECHNOLOGY - 2018: AMN-2018. Author(s), 2018. http://dx.doi.org/10.1063/1.5052070.

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Gaal, P., R. Bauer, M. Sander, T. Slobodskyy, and W. Hansen. "Elastic and thermal properties of strain-tailored air-gap heterostructures." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/cleo_si.2017.sw4o.6.

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Liang, Ting, Ping Zhang, Peng Yuan, Man Zhou, and Siping Zhai. "Interfacial Thermal Conductance and Thermal Rectification Across In-Plane Graphene/h-BN Heterostructures With Different Bonding Types." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-4159.

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Abstract The in-plane graphene/hexagonal boron nitride (Gr/h-BN) heterostructures have received extensive attention in recent years due to their excellent physical properties and the development potential of next-generation nanoelectronic devices. Generally, different bonding types between Gr and h-BN are considered in different non-equilibrium molecular dynamics (NEMD) simulations studies. However, which type of bonding is most conducive to interface thermal transport is still very confusing. In this work, we investigate the interfacial thermal conductance (ITC) and the thermal rectification (TR) in five different bonding types of in-plane Gr/h-BN heterostructures by using NEMD simulations. It is found that the ITC depends strongly on the bonding strength and arrangement of different atoms across the boundary. Among the five different bonding types of heterostructures, the C-N bonded heterojunction exhibits the highest ITC due to its stronger interfacial bonding. The analyses on the strain distribution indicated that a low interfacial stress level at the interface junction, may facilitate the heat conduction, thus leading to a higher ITC. In addition, we found that TR occurs in all five bonded heterostructures, and the C-B bonded heterojunction possesses the highest TR factor. The present study is of significance for understanding the thermal transport behavior of Gr/h-BN heterostructures and promoting their future applications in thermal management and thermoelectric devices.
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Zheng, Kai, Huaiyu Ye, Guoqi Zhang, Yingying Zhang, Lian Liu, Junke Jiang, Qun Yang, Chunjian Tan, and Xianping Chen. "First principle design of CdS/germanene heterostructures with tunable electronic and transport properties." In 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2017. http://dx.doi.org/10.1109/eurosime.2017.7926284.

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Yang, Qun, Chunjian Tan, Huaiyu Ye, Xianping Chen, and Guoqi Zhang. "The intriguing electronic and optical properties modulation in blue phosphorene/g-III-nitrides heterostructures." In 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2017. http://dx.doi.org/10.1109/eurosime.2017.7926299.

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Tan, Chunjian, Qun Yang, Huaiyu Ye, Xianping Chen, and G. Q. Zhang. "An AlAs/germanene heterostructure with outstanding tunability of electronic properties." In 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2017. http://dx.doi.org/10.1109/eurosime.2017.7926298.

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Li, Bin, Anastassios Mavrokefalos, Jianhua Zhou, Li Shi, Paul S. Ho, Joshua Zide, and Arthur C. Gossard. "Nano-Imprint Patterning of Nanowire Structures for Interconnect Study." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-82644.

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A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect lines, which is used to investigate the size effects on the transport and electromigration properties of interconnects for future microelectronics.
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Gillet, Jean-Numa, Yann Chalopin, and Sebastian Volz. "Thermal Design of Highly-Efficient Thermoelectric Materials With Atomic-Scale Three-Dimensional Phononic Crystals." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-43538.

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Owing to their thermal insulating properties, superlattices have been extensively studied. A breakthrough in the performance of thermoelectric devices was achieved by using superlattice materials. The problem of those nanostructured materials is that they mainly affect heat transfer in only one direction. In this paper, the concept of canceling heat conduction in the three spatial directions by using atomic-scale three-dimensional (3D) phononic crystals is explored. A period of our atomic-scale 3D phononic crystal is made up of a large number of diamond-like cells of silicon atoms, which form a square supercell. At the center of each supercell, we substitute a smaller number of Si diamond-like cells by other diamond-like cells, which are composed of germanium atoms. This elementary heterostructure is periodically repeated to form a Si/Ge 3D nanostructure. To obtain different atomic configurations of the phononic crystal, the number of Ge diamond-like cells at the center of each supercell can be varied by substitution of Si diamond-like cells. The dispersion curves of those atomic configurations can be computed by lattice dynamics. With a general equation, the thermal conductivity of our atomic-scale 3D phononic crystal can be derived from the dispersion curves. The thermal conductivity can be reduced by at least one order of magnitude in an atomic-scale 3D phononic crystal compared to a bulk material. This reduction is due to the decrease of the phonon group velocities without taking into account that of the phonon average mean free path.
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