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Journal articles on the topic 'Heterostructures – Thermal properties'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Ren, Kai, Ruxin Zheng, Peng Xu, et al. "Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation." Nanomaterials 11, no. 9 (2021): 2236. http://dx.doi.org/10.3390/nano11092236.

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After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stabil

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2

Wang, Mingchao, Guangping Zhang, Huisheng Peng, and Cheng Yan. "Energetic and thermal properties of tilt grain boundaries in graphene/hexagonal boron nitride heterostructures." Functional Materials Letters 08, no. 03 (2015): 1550038. http://dx.doi.org/10.1142/s1793604715500381.

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Graphene/hexagonal boron nitride (G/h-BN) heterostructure has attracted tremendous research efforts owing to its great potential for applications in nanoscale electronic devices. In such hybrid materials, tilt grain boundaries (GBs) between graphene and h-BN grains may have unique physical properties, which have not been well understood. Here we have conducted non-equilibrium molecular dynamics simulations to study the energetic and thermal properties of tilt GBs in G/h-BN heterostructures. The effect of misorientation angles of tilt GBs on both GB energy and interfacial thermal conductance ar

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3

Golan, G., A. Axelevitch, and Jacob Azoulay. "Properties investigation of thin films photovoltaic hetero-structures." World Journal of Engineering 11, no. 3 (2014): 233–38. http://dx.doi.org/10.1260/1708-5284.11.3.233.

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This paper presents an experimental investigation of photovoltaic (PV) properties in heterostructures consisting of indium oxide and amorphous silicon thin films, grown on a single crystalline p-type silicon and polyimide flexible substrates. Both thin films: In2O3 and a-Si were deposited by magnetron sputtering. Such heterostructure thin film systems are attractive because of their ability to convert solar energy into electrical one. Grown Heterostructures films were treated by simultaneous influence of an electron beam and high energetic photons with energy more than 1.5 eV in the so called

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4

Yao, Wenjuan, and Lei Fan. "Defects in Graphene/h-BN Planar Heterostructures: Insights into the Interfacial Thermal Transport Properties." Nanomaterials 11, no. 2 (2021): 500. http://dx.doi.org/10.3390/nano11020500.

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In this work, the defects (local stress generated) induce the formation of graphene/h-BN planar heterostructure (Gr-hBN-PH) to form "unsteady structure". Then, the coupling effects of external field (heat flow direction, strain and temperature field) and internal field (defect number, geometry shape and interfacial configuration) on the interface thermal conductivity (ITC) of Gr-hBN-PH were studied. The results show phonon transmission is less affected by compression deformation under the action of force-heat-defect coupling, while phonon transmission of heterostructure is more affected by ten

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5

Qin, Huasong, Qing-Xiang Pei, Yilun Liu, and Yong-Wei Zhang. "The mechanical and thermal properties of MoS2–WSe2 lateral heterostructures." Physical Chemistry Chemical Physics 21, no. 28 (2019): 15845–53. http://dx.doi.org/10.1039/c9cp02499a.

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6

Кулеев, И. И. "Влияние фокусировки фононов на теплопроводность гетероструктур GaAs/AlGaAs при низких температурах". Физика твердого тела 61, № 3 (2019): 426. http://dx.doi.org/10.21883/ftt.2019.03.47231.271.

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AbstractThe effect of the anisotropy of elastic properties on the thermal conductivity of GaAs/AlGaAs heterostructures at low temperatures is investigated. The effect of phonon focusing on the anisotropy of the thermal conductivity is analyzed. The parameters of the specular reflection of phonons from the boundaries of the heterostructures, which characterize the heat flux in the Knudsen mode of the phonon gas flow, are determined. The angular dependences of the mean free paths of phonons of different polarizations, which determine the thermal conductivity anisotropy of heterostructures with o

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7

Shiojima, Kenji, and Naoteru Shigekawa. "Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures." Japanese Journal of Applied Physics 43, no. 1 (2004): 100–105. http://dx.doi.org/10.1143/jjap.43.100.

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8

Majid, Farzana, Abdul Malik, Sadia Ata, et al. "Structural and Optical Properties of Multilayer Heterostructure of CdTe/CdSe Thin Films." Zeitschrift für Physikalische Chemie 233, no. 9 (2019): 1215–31. http://dx.doi.org/10.1515/zpch-2018-1339.

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Abstract CdTe/CdSe multilayer heterostructures thin films were prepared by thermal evaporation method. The CdTe/CdSe layers deposited on glass substrate and effects of annealing temperature on optical and structural properties of thin films were investigated. The XRD analysis revealed that CdTe and CdSe were in cubic (111) and hexagonal (100) forms. By increasing the annealing temperature, intensity of XRD peaks increased for multilayer heterostructures. Band alignment in heterostructures of CdTe/CdSe was of type II. Energy band gaps values for CdTe/CdSe multilayer heterostructures increased w

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9

Juntunen, Taneli, Tomi Koskinen, Vladislav Khayrudinov, et al. "Thermal conductivity suppression in GaAs–AlAs core–shell nanowire arrays." Nanoscale 11, no. 43 (2019): 20507–13. http://dx.doi.org/10.1039/c9nr06831g.

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10

Lin, C. H., R. J. Hwu, and L. P. Sadwick. "Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy." Journal of Materials Research 16, no. 11 (2001): 3266–73. http://dx.doi.org/10.1557/jmr.2001.0450.

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Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterized through x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAs la

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11

Wang, Jifen, Shuang Wu, Huaqing Xie, and Liangtao Xiong. "Theoretical study on thermal properties of molybdenum disulfide/silicon heterostructures." Computational Materials Science 200 (December 2021): 110835. http://dx.doi.org/10.1016/j.commatsci.2021.110835.

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12

Gao, Qiang-Ye, Yong-Dong Xie, Bai-Chun Zhan, and Xing-Zhen Xu. "Synthesis and characterization of CdS@ZnO nanoribbon@quantum dot and their enhanced visible-light-driven photocatalytic activities." Modern Physics Letters B 34, no. 10 (2020): 2050088. http://dx.doi.org/10.1142/s0217984920500888.

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CdS/ZnO nanoribbon/quantum dot was prepared using thermal decomposition method. Size and distribution of ZnO quantum dots on CdS nanobelt were controlled by concentrations of zinc acetate ethanol solution and thermal decomposition temperature. The structure and optical properties of CdS nanobelts and CdS/ZnO heterostructures are studied by XRD, TEM, PL and Raman scattering and UV–Vis absorption spectra. The photocatalytic performances of CdS nanobelts and CdS/ZnO heterostructures are tested by photocatalytic degradation of RhB aqueous solution under visible light irradiation. Compared with tha

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13

Berman, Diana, Yuchen Sha, and Elena V. Shevchenko. "Effect of Polymer Removal on the Morphology and Phase of the Nanoparticles in All-Inorganic Heterostructures Synthesized via Two-Step Polymer Infiltration." Molecules 26, no. 3 (2021): 679. http://dx.doi.org/10.3390/molecules26030679.

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Polymer templates play an essential role in the robust infiltration-based synthesis of functional multicomponent heterostructures with controlled structure, porosity, and composition. Such heterostructures are be used as hybrid organic–inorganic composites or as all-inorganic systems once the polymer templates are removed. Using iron oxide/alumina heterostructures formed by two-step infiltration of polystyrene-block-polyvinyl pyridine block copolymer with iron and aluminum precursors from the solution and vapor-phases, respectively, we show that the phase and morphology of iron oxide nanoparti

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14

Cervantes-Contreras, M., C. A. Quezada-Maya, M. López-López, G. González de la Cruz, M. Tamura, and T. Yodo. "Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy." Journal of Crystal Growth 278, no. 1-4 (2005): 415–20. http://dx.doi.org/10.1016/j.jcrysgro.2005.01.011.

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15

Li, Yinfeng, Anran Wei, Han Ye, and Haimin Yao. "Mechanical and thermal properties of grain boundary in a planar heterostructure of graphene and hexagonal boron nitride." Nanoscale 10, no. 7 (2018): 3497–508. http://dx.doi.org/10.1039/c7nr07306b.

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In this study, the mechanical and thermal properties of grain boundaries (GBs) in planar heterostructures of graphene and hexagonal boron nitride (h-BN) were studied using the molecular dynamics method in combination with the density functional theory and classical disclination theory.

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16

de Oliveira Machado, Diego Henrique, Emerson Aparecido Floriano, Luis Vicente de Andrade Scalvi, and Margarida Juri Saeki. "Investigation of Photoinduced Electrical Properties in the Heterojunction TiO₂/SnO₂." Advanced Materials Research 975 (July 2014): 201–6. http://dx.doi.org/10.4028/www.scientific.net/amr.975.201.

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TiO2/SnO2 thin films heterostructures are grown by the sol-gel-dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550°C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100°C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. Electrical properties of TiO2/

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17

Pezoldt, Jörg, and Volker Cimalla. "Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing." Crystals 10, no. 6 (2020): 523. http://dx.doi.org/10.3390/cryst10060523.

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Silicon carbide is a material with a multistable crystallographic structure, i.e., a polytypic material. Different polytypes exhibit different band gaps and electronic properties with nearly identical basal plane lattice constants, making them interesting for heterostructures without concentration gradients. The controlled formation of this heterostructure is still a challenge. The ability to adjust a defined temperature–time profile using rapid thermal processing was used to imprint the polytype transitions by controlling the nucleation and structural evolution during the temperature ramp-up

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18

Gächter, Nadine, Fabian Könemann, Masiar Sistani, et al. "Spatially resolved thermoelectric effects in operando semiconductor–metal nanowire heterostructures." Nanoscale 12, no. 40 (2020): 20590–97. http://dx.doi.org/10.1039/d0nr05504b.

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19

Macias, Marcos, Yenny Lucero Casallas-Moreno, Marlene Camacho-Reynoso, et al. "Thermal properties of cubic GaN/GaAs heterostructures grown by molecular beam epitaxy." Journal of Applied Physics 128, no. 13 (2020): 135301. http://dx.doi.org/10.1063/5.0016496.

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20

Enyashin, A. N., G. Seifert, and A. L. Ivanovskii. "Calculation of the Electronic and Thermal Properties of C/BN Nanotubular Heterostructures." Inorganic Materials 41, no. 6 (2005): 595–603. http://dx.doi.org/10.1007/s10789-005-0176-z.

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21

Su, Yong, Xia Meng, Yiqing Chen, et al. "Synthesis and Characterization of Al2O3/SiO2 Coaxial Nanowire Heterostructures with Periodical Twinning Structures." Journal of Nanoscience and Nanotechnology 8, no. 7 (2008): 3483–86. http://dx.doi.org/10.1166/jnn.2008.114.

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Al2O3/SiO2 coaxial nanowire heterostructures were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of Al2O3/SiO2 coaxial nanowire heterostructures follows a vapor-solid (VS) process. Studies indicate that typical nanostructure consists of single twinning-crystalline Al2O3 nanowires (core) with diameter of about 50 nm and amorphous SiO2 shell. Photoluminescence properties were also investigated at room t

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22

Ravichandran, Jayakanth. "Thermoelectric and thermal transport properties of complex oxide thin films, heterostructures and superlattices." Journal of Materials Research 32, no. 1 (2016): 183–203. http://dx.doi.org/10.1557/jmr.2016.419.

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23

Souifi, A., T. Benyattou, G. Guillot, G. Brémond, D. Dutartre, and P. Warren. "Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructures." Journal of Applied Physics 78, no. 6 (1995): 4039–45. http://dx.doi.org/10.1063/1.359860.

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24

Aigouy, L., B. Gil, O. Briot, et al. "Optical properties and thermal transport of carriers in (Zn,Cd)Se-ZnSe heterostructures." Journal of Electronic Materials 25, no. 2 (1996): 183–93. http://dx.doi.org/10.1007/bf02666242.

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25

Kooli, Fethi, Yan Liu, Kais Hbaieb, and Rawan Al-Faze. "Factors that affect the thermal stability and properties of Zr-porous clay heterostructures." Journal of Thermal Analysis and Calorimetry 126, no. 3 (2016): 1143–55. http://dx.doi.org/10.1007/s10973-016-5825-8.

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26

Kolaklieva, Lilyana, Roumen Kakanakov, V. Chitanov, Polina Dulgerova, and Volker Cimalla. "Search for a Suitable Ohmic Metallization Scheme to GaN/AlGaN Heterostructures for Sub-Micron Devices." Solid State Phenomena 159 (January 2010): 81–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.81.

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Ohmic properties, thermal stability and surface morphology of Al-based and non-aluminium metallizations are investigated in dependence on the annealing temperature and initial composition. Non-aluminium contacts show poor ohmic properties, while contact resistivity of 3.47x10-5 Ω.cm2 is achieved for Ti/Al/Ti/Au metallization with a former-Ti/Al ratio of (30 wt.% /70 wt.%). Thermal properties of the Al-based metallization are improved by application of Mo layer as a barrier under the upper Au film of the contact structure. These contacts show excellent thermal stability at operating temperature

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27

Burke, M. G., R. M. Young, C. B. Freidhoff, W. D. Partlow, and H. Buhay. "Characterization of plasma-assisted CVD multilayers/heterostructures." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 804–5. http://dx.doi.org/10.1017/s0424820100088336.

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Amorphous refractory materials can be used in a number of optoelectronic applications when fabricated in multilayer structures. When the layers are deposited with very small thicknesses, heterostructures are produced. Such structures have an adjustable optical bandgap because the wavelength of light is much larger than the distance over which the composition of the film varies (layer to layer). Thicker multilayer structures can be fabricated on metallized, high thermal conductivity substrates. The purpose of the structure is to both protect and modify the substrate's properties. Two types of p

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28

Fahrnbauer, Felix, Stefan Maier, Martin Grundei, et al. "Heterostructures of skutterudites and germanium antimony tellurides – structure analysis and thermoelectric properties of bulk samples." Journal of Materials Chemistry C 3, no. 40 (2015): 10525–33. http://dx.doi.org/10.1039/c5tc01509j.

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The precipitation of skutterudite-type crystallites in germanium antimony tellurides yields intriguing materials with respect to their thermoelectric performance, especially due to a very low phononic part of the lattice thermal conductivity.

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29

Lee, H. S., K. H. Lee, J. S. Kim, H. L. Park, and T. W. Kim. "Rapid thermal annealing effects on the optical properties in strained CdTe (100)/GaAs (100) heterostructures." Journal of Materials Science 39, no. 23 (2004): 7115–17. http://dx.doi.org/10.1023/b:jmsc.0000047562.80341.2b.

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30

Kim, Zin-Sig, Hyung-Seok Lee, Sung-Bum Bae, Eunsoo Nam, and Jong-Won Lim. "Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond." Journal of Nanoscience and Nanotechnology 19, no. 10 (2019): 6119–22. http://dx.doi.org/10.1166/jnn.2019.16987.

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31

Liang, Ting, Man Zhou, Ping Zhang, Peng Yuan, and Daoguo Yang. "Multilayer in-plane graphene/hexagonal boron nitride heterostructures: Insights into the interfacial thermal transport properties." International Journal of Heat and Mass Transfer 151 (April 2020): 119395. http://dx.doi.org/10.1016/j.ijheatmasstransfer.2020.119395.

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32

Roccaforte, Fabrizio, Ferdinando Iucolano, Filippo Giannazzo, et al. "Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures." Materials Science Forum 615-617 (March 2009): 967–70. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.967.

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Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In particular, the growth of AlGaN/GaN heterostructures on SiC substrates, due to the high thermal conductivity of SiC, can lead to significant improvement in the device performances. An important issue in the fabrication of AlGaN/GaN devices is the influence of the required thermal budget (700-900°C) on the properties of Ohmic contacts and device isolation. In this work, the influence of thermal annealing on the fabrication of AlGaN/GaN devices was studied.

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33

Kim, M. D., M. S. Han, T. W. Kang, and T. W. Kim. "Effect of thermal annealing on the structural and optical properties of CdTe (111)/GaAs (100) heterostructures." Thin Solid Films 310, no. 1-2 (1997): 132–37. http://dx.doi.org/10.1016/s0040-6090(97)00375-1.

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34

Dikareva, N. V., O. V. Vikhrova, B. N. Zvonkov, et al. "Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer." Semiconductors 49, no. 1 (2015): 9–12. http://dx.doi.org/10.1134/s1063782615010054.

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35

Rosenberg, Sara E., Cynthia G. Madras, Peter Y. Wong, and Ioannis N. Miaoulis. "The viscosity of germanium during substrate relaxation upon thermal anneal." Journal of Materials Research 12, no. 7 (1997): 1706–10. http://dx.doi.org/10.1557/jmr.1997.0235.

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Thin-film heterostructures experience structural relaxation when subjected to post-deposition thermal heat treatment. The rate of relaxation, elastic effects, and inelastic effects on the stress and deformation of the structure are determined by the physical properties of the materials, in particular, the solid-phase viscosity. During relaxation, movement of defects causes an increase of viscosity with time at a constant rate as these defects are annihilated. Experimental anneals have been performed on structures with polycrystalline silicon films on (111) germanium substrates, in which the su

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36

Yuk, J. M., J. Y. Lee, T. W. Kim, D. I. Son, and W. K. Choi. "Effects of thermal annealing on the microstructural properties of the lower region in ZnO thin films grown on n-Si (001) substrates." Journal of Materials Research 23, no. 4 (2008): 1082–86. http://dx.doi.org/10.1557/jmr.2008.0141.

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Transmission electron microscopy (TEM) images, selected-area electron-diffraction patterns, high-resolution TEM images, and x-ray energy dispersive spectroscopy line scans for the ZnO/n-Si (001) heterostructures annealed at 900 °C showed that stacking faults and amorphous layers were formed in the lower region of the ZnO films. The stacking faults existing in the lower region of the ZnO columnar grains originated from the formation of zinc vacancy layers caused by the thermal treatment, resulting in the existence of a tensile strain. The formation of the amorphous layer in the ZnO film was att

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37

OLSHANETSKY, E. B., Z. D. KVON, D. V. SHEGLOV, et al. "THE EFFECT OF THE MICROSCOPIC STATE OF A BALLISTIC RING ON THE AHARONOV-BOHM OSCILLATIONS TEMPERATURE DEPENDENCE." International Journal of Modern Physics B 18, no. 27n29 (2004): 3505–8. http://dx.doi.org/10.1142/s0217979204026901.

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In the present work we study the electron transport properties of small (≈ 100 nm) ring interferometers fabricated by the local anodic oxidation of a AlGaAs / GaAs heterostructures containing 2D electron gas. Owing to the small size of the rings the Aharonov-Bohm (AB) oscillations in them can be observed at temperatures as high as 9 K. It has been found that the temperature dependence of AB oscillations amplitude in these rings is sensitive to the modification of the microscopic potential realization resulting from thermal recycling of the structure.

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38

Lin, Fang Hsin, and Reuy An Doong. "Synthesis of Ferrite Nanoparticle and Ferrite-Gold Heterostructures." Advanced Materials Research 123-125 (August 2010): 251–55. http://dx.doi.org/10.4028/www.scientific.net/amr.123-125.251.

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The synthesis of uniform and monodispersed magnetic and optical nanocrystals has received much attention in recent years due to the size-dependent physicochemical properties. In this study, we have demonstrated a general approach for the synthesis of size-tunable ferrite and gold nanocrystals and their nanocomposite. The monodispersed magnetite nanocrystals were obtained by thermal decomposition of iron-oleate complex in a high boiling point solvent in presence of oleylamine and oleic acid. The size of magnetite nanocrystal can be tuned from 7 – 11nm by changing the amount of iron-oleate compl

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39

Das, Debabrata, Hemant Ghadi, Sandeep Madhusudan Singh, and Subhananda Chakrabarti. "Confinement Barrier Induced Enhancement in Thermal Stability of the Optical Response of InAs/InGaAs/GaAs Submonolayer Quantum Dot Heterostuctures." MRS Advances 2, no. 43 (2017): 2349–54. http://dx.doi.org/10.1557/adv.2017.364.

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Abstract:In this study the improvement in thermal stability of optical properties of InAs submonolayer quantum dot (SML QD) heterostructures is observed through incorporation of symmetric AlGaAs barrier layers. Low temperature photoluminescence (PL) spectra shows blue shift with less full width at half maxima, ascribe to the assimilation of AlGaAs barrier layers. The sample with confinement enhancing barrier shows the highest ground to ground transition energy with the lowest dot size distribution. Ex situ annealing of as grown samples, followed by PL analysis, confirms the improvement in ther

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40

Jin, Changhyun, Hyunsoo Kim, Kyungjoon Baek, and Chongmu Lee. "Effects of coating and thermal annealing on the photoluminescence properties of ZnS/ZnO one-dimensional radial heterostructures." Materials Science and Engineering: B 170, no. 1-3 (2010): 143–48. http://dx.doi.org/10.1016/j.mseb.2010.02.029.

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41

Gong, Feng, Zhiwei Ding, Yin Fang, et al. "Enhanced Electrochemical and Thermal Transport Properties of Graphene/MoS2 Heterostructures for Energy Storage: Insights from Multiscale Modeling." ACS Applied Materials & Interfaces 10, no. 17 (2018): 14614–21. http://dx.doi.org/10.1021/acsami.7b19582.

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42

Greco, G., S. Di Franco, C. Bongiorno, et al. "Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures." Semiconductor Science and Technology 35, no. 10 (2020): 105004. http://dx.doi.org/10.1088/1361-6641/aba288.

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43

Nowozin, T., D. Bimberg, K. Daqrouq, M. N. Ajour, and M. Awedh. "Materials for Future Quantum Dot-Based Memories." Journal of Nanomaterials 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/215613.

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The present paper investigates the current status of the storage times in self-organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross-sections, are listed. Based on the theory of thermal emission of carriers from QDs, we extrapolate the values for materials that would increase the storage time at room temperature to more than millions of years. For electron storage, GaSb/AlSb, GaN/AlN, and InAs/AlSb are proposed. For hole storage, GaSb/Al0.9

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44

Lupan, Oleg, Helge Krüger, Leonard Siebert, et al. "Additive Manufacturing as a Means of Gas Sensor Development for Battery Health Monitoring." Chemosensors 9, no. 9 (2021): 252. http://dx.doi.org/10.3390/chemosensors9090252.

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Lithium-ion batteries (LIBs) still need continuous safety monitoring based on their intrinsic properties, as well as due to the increase in their sizes and device requirements. The main causes of fires and explosions in LIBs are heat leakage and the presence of highly inflammable components. Therefore, it is necessary to improve the safety of the batteries by preventing the generation of these gases and/or their early detection with sensors. The improvement of such safety sensors requires new approaches in their manufacturing. There is a growing role for research of nanostructured sensor’s dur

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Karakovskaya, Ksenya I., Svetlana I. Dorovskikh, Evgeniia S. Vikulova, et al. "Volatile Iridium and Platinum MOCVD Precursors: Chemistry, Thermal Properties, Materials and Prospects for Their Application in Medicine." Coatings 11, no. 1 (2021): 78. http://dx.doi.org/10.3390/coatings11010078.

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Interest in iridium and platinum has been steadily encouraged due to such unique properties as exceptional chemical inertia and corrosion resistance, high biological compatibility, and mechanical strength, which are the basis for their application in medical practice. Metal-organic chemical vapor deposition (MOCVD) is a promising method to fabricate Ir and Pt nanomaterials, multilayers, and heterostructures. Its advantages include precise control of the material composition and microstructure in deposition processes at relatively low temperatures onto non-planar substrates. The development of

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46

Karakovskaya, Ksenya I., Svetlana I. Dorovskikh, Evgeniia S. Vikulova, et al. "Volatile Iridium and Platinum MOCVD Precursors: Chemistry, Thermal Properties, Materials and Prospects for Their Application in Medicine." Coatings 11, no. 1 (2021): 78. http://dx.doi.org/10.3390/coatings11010078.

Full text

Abstract:

Interest in iridium and platinum has been steadily encouraged due to such unique properties as exceptional chemical inertia and corrosion resistance, high biological compatibility, and mechanical strength, which are the basis for their application in medical practice. Metal-organic chemical vapor deposition (MOCVD) is a promising method to fabricate Ir and Pt nanomaterials, multilayers, and heterostructures. Its advantages include precise control of the material composition and microstructure in deposition processes at relatively low temperatures onto non-planar substrates. The development of

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Cao, Duo, Xinhong Cheng, Ya-Hong Xie, et al. "Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures." RSC Advances 5, no. 47 (2015): 37881–86. http://dx.doi.org/10.1039/c5ra04728e.

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Gautam, Ujjal K., Yoshio Bando, Pedro M. F. J. Costa, et al. "Inorganically filled carbon nanotubes: Synthesis and properties." Pure and Applied Chemistry 82, no. 11 (2010): 2097–109. http://dx.doi.org/10.1351/pac-con-09-12-08.

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Since the discovery of carbon nanotubes (CNTs) in 1991, widespread research has been carried out to understand their useful physical and electronic properties and also to explore their use in devices. CNTs have many unique properties such as tunable electrical resistance, mechanical robustness, and high thermal conductivity, which when combined with other inorganic materials such as phosphors or superconductors could lead to hetero-structures with diverse functionality. We have been able to obtain mass production of such materials wherein CNTs form core-shell heterostructures with metals, semi

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Aziz, Mohsin, Jorlandio F. Felix, Dler Jameel, et al. "Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures." Superlattices and Microstructures 88 (December 2015): 80–89. http://dx.doi.org/10.1016/j.spmi.2015.08.028.

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Uvarov, A. V., K. S. Zelentsov, and A. S. Gudovskikh. "Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition." Semiconductors 53, no. 8 (2019): 1075–81. http://dx.doi.org/10.1134/s1063782619080207.

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