Relevant bibliographies by topics / Heterovalent

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  2. Dissertations / Theses
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Academic literature on the topic 'Heterovalent'

Author: Grafiati
Published: 4 June 2021
Last updated: 17 February 2022

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Journal articles on the topic "Heterovalent"

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Yao, T., F. Lu, M. W. Cho, K. W. Koh, Z. Zhu, L. H. Kuo, T. Yasuda, et al. "Heterovalent ZnSe/GaAs Interfaces." physica status solidi (b) 202, no. 2 (August 1997): 657–68. http://dx.doi.org/10.1002/1521-3951(199708)202:2<657::aid-pssb657>3.0.co;2-4.

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Bennett, M. A., S. K. Bhargava, F. Mohr, L. L. Welling, and A. C. Willis. "Synthesis and X-Ray Structure of a Heterovalent, Cycloaurated Pentafluorophenylgold(I)/Pentafluorophenylgold(III) Complex." Australian Journal of Chemistry 55, no. 4 (2002): 267. http://dx.doi.org/10.1071/ch02034.

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The heterovalent gold(I)/gold(III) complex [(C6F5)AuI(μ-2-Ph2PC6H3-6-Me)AuIII(C6F5){η2-(6-MeC6H3-2-PPh2)}] has been prepared and structurally characterized by X-ray crystallography. It shows square planar stereochemistry at AuIII incorporating a four-membered chelate ring and linear arrangement at AuI. The compound is a rare example of a heterovalent complex containing an aryl ligand on each gold atom.
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Костишин, В. Г., В. В. Коровушкин, К. В. Похолок, А. В. Труханов, И. М. Исаев, А. Ю. Миронович, and М. А. Дарвиш. "Особенности катионного распределения и магнитных свойств поликристаллических гексагональных ферритов BaFe-=SUB=-12-x-=/SUB=-Sn-=SUB=-x-=/SUB=-O-=SUB=-19-=/SUB=-." Физика твердого тела 63, no. 10 (2021): 1496. http://dx.doi.org/10.21883/ftt.2021.10.51396.126.

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The cation distribution and magnetic properties of polycrystalline ВаFe12–xSnxO19 (х = 0.0, 0.1, 0.3, 0.6, 0.9 and 1.2) ferrites have been studied for the first time by Fe57 and Sn119 Mössbauer spectroscopy. It was shown that doping of BaFe12O19 with tin is performed with limited heterovalent isomorphism according to the scheme 2Fe3+Sn4+ + Fe2+. It was found that intense heterovalent isomorphic substitutions occur in the 12k site of the BaFe12-xSnxO19 hexaferrite in the range of 0.1 < x < 0.6; less significant substitutions observed in the 4f2 and 2a sites. It was established that the heterovalent isomorphic substitution of tin for iron in BaFe12- xSnxO19 is limited by the values of x in range х = 0.6–0.9 Measurements of the magnetic parameters of the obtained samples were performed. The possibility of practical application of the synthesized ferrites is discussed.
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van Veldhuizen, M., J. A. Hendriks, and C. A. J. Appelo. "Numerical computation in heterovalent chromatography." Applied Numerical Mathematics 28, no. 1 (September 1998): 69–89. http://dx.doi.org/10.1016/s0168-9274(98)00016-6.

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Li, D., Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, and R. L. Gunshor. "Vacancy ordering at heterovalent interfaces." Surface Science 267, no. 1-3 (January 1992): 181–86. http://dx.doi.org/10.1016/0039-6028(92)91116-s.

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Lyu, Feiyi, Xiaoqi Zheng, Yingqiao Wang, Ruowen Shi, Jianli Yang, Ziyue Li, Jiase Yu, and Bo-Lin Lin. "Bi3+ doped 2D Ruddlesden–Popper organic lead halide perovskites." Journal of Materials Chemistry A 7, no. 26 (2019): 15627–32. http://dx.doi.org/10.1039/c9ta04145a.

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Florea, Mihaela, Daniel Avram, Bogdan Cojocaru, Ion Tiseanu, Vasile Parvulescu, and Carmen Tiseanu. "Defect induced tunable near infrared emission of Er–CeO2 by heterovalent co-dopants." Physical Chemistry Chemical Physics 18, no. 27 (2016): 18268–77. http://dx.doi.org/10.1039/c6cp02754g.

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Li, Ya-Nan, Zi-Xia Chen, Wen-Dong Yao, Ru-Ling Tang, and Sheng-Ping Guo. "Heterovalent cations substitution to design asymmetric chalcogenides with promising nonlinear optical performances." Journal of Materials Chemistry C 9, no. 27 (2021): 8659–65. http://dx.doi.org/10.1039/d1tc01806j.

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Miao, Xiaoliang, Ting Qiu, Shufang Zhang, He Ma, Yanqiang Hu, Fan Bai, and Zhuangchun Wu. "Air-stable CsPb1−xBixBr3 (0 ≤ x ≪ 1) perovskite crystals: optoelectronic and photostriction properties." Journal of Materials Chemistry C 5, no. 20 (2017): 4931–39. http://dx.doi.org/10.1039/c7tc00417f.

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Taniguchi, Hiroki, Tomohiro Nakane, Takayuki Nagai, Chikako Moriyoshi, Yoshihiro Kuroiwa, Akihide Kuwabara, Masaichiro Mizumaki, Kiyofumi Nitta, Ryuji Okazaki, and Ichiro Terasaki. "Heterovalent Pb-substitution in ferroelectric bismuth silicate Bi2SiO5." Journal of Materials Chemistry C 4, no. 15 (2016): 3168–74. http://dx.doi.org/10.1039/c6tc00584e.

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Systematic tuning of the ferroelectric phase transition in Bi2SiO5 was demonstrated using element substitution, where nominally heterovalent Pb was successfully substituted for Bi up to 20%.
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Dissertations / Theses on the topic "Heterovalent"

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Funato, Mitsuru. "Control of Interface Properties in ZnSe-GaAs Heterovalent Heterostructures Grown by Metalorganic Vapor Phase Epitaxy." Kyoto University, 1999. http://hdl.handle.net/2433/77935.

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Quayle, Paul Connolly. "Synthesis and Characterization of Zinc Tin Nitride: A Charge-Neutral Ordering Model for Wurtzite-based Heterovalent Ternary Compounds." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1449247500.

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Frey, Alexander [Verfasser], and Karl [Akademischer Betreuer] Brunner. "Spin-Dependent Tunneling and Heterovalent Heterointerface Effects in Diluted Magnetic II-VI Semiconductor Heterostructures / Alexander Frey. Betreuer: Karl Brunner." Würzburg : Universitätsbibliothek der Universität Würzburg, 2013. http://d-nb.info/1037311388/34.

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Jayatunga, Benthara Hewage Dinushi. "Heterovalent Semiconductors: First-Principles Calculations of the Band Structure of ZnGeGa2N4, and Metalorganic Chemical Vapor Deposition of ZnGeN2 - GaN Alloys and ZnSnN2." Case Western Reserve University School of Graduate Studies / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=case1619087038602758.

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Carlin, Andrew Michael. "Materials Integration and Metamorphic Substrate Engineering from Si to GaAs to InP for Advanced III-V/Si Photovoltaics." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1354648645.

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"Monolithic Heterovalent Integration of Compound Semiconductors and Their Applications." Doctoral diss., 2019. http://hdl.handle.net/2286/R.I.53681.

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abstract: Compound semiconductors tend to be more ionic if the cations and anions are further apart in atomic columns, such as II-VI compared to III-V compounds, due in part to the greater electronegativity difference between group-II and group-VI atoms. As the electronegativity between the atoms increases, the materials tend to have more insulator-like properties, including higher energy band gaps and lower indices of refraction. This enables significant differences in the optical and electronic properties between III-V, II-VI, and IV-VI semiconductors. Many of these binary compounds have similar lattice constants and therefore can be grown epitaxially on top of each other to create monolithic heterovalent and heterocrystalline heterostructures with optical and electronic properties unachievable in conventional isovalent heterostructures. Due to the difference in vapor pressures and ideal growth temperatures between the different materials, precise growth methods are required to optimize the structural and optical properties of the heterovalent heterostructures. The high growth temperatures of the III-V materials can damage the II-VI barrier layers, and therefore a compromise must be found for the growth of high-quality III-V and II-VI layers in the same heterostructure. In addition, precise control of the interface termination has been shown to play a significant role in the crystal quality of the different layers in the structure. For non-polar orientations, elemental fluxes of group-II and group-V atoms consistently help to lower the stacking fault and dislocation density in the II-VI/III-V heterovalent heterostructures. This dissertation examines the epitaxial growth of heterovalent and heterocrystalline heterostructures lattice-matched to GaAs, GaSb, and InSb substrates in a single-chamber growth system. The optimal growth conditions to achieve alternating layers of III-V, II-VI, and IV-VI semiconductors have been investigated using temperature ramps, migration-enhanced epitaxy, and elemental fluxes at the interface. GaSb/ZnTe distributed Bragg reflectors grown in this study significantly outperform similar isovalent GaSb-based reflectors and show great promise for mid-infrared applications. Also, carrier confinement in GaAs/ZnSe quantum wells was achieved with a low-temperature growth technique for GaAs on ZnSe. Additionally, nearly lattice-matched heterocrystalline PbTe/CdTe/InSb heterostructures with strong infrared photoluminescence were demonstrated, along with virtual (211) CdZnTe/InSb substrates with extremely low defect densities for long-wavelength optoelectronic applications.
Dissertation/Thesis
Doctoral Dissertation Electrical Engineering 2019
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Frey, Alexander. "Spin-Dependent Tunneling and Heterovalent Heterointerface Effects in Diluted Magnetic II-VI Semiconductor Heterostructures." Doctoral thesis, 2011. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-78133.

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The contribution of the present thesis consists of three parts. They are centered around investigating certain semiconductor heterointerfaces relevant to spin injection, exploring novel, diluted magnetic single barrier tunneling structures, and further developing diluted magnetic II-VI resonant tunneling diodes
Der Beitrag der vorliegenden Arbeit besteht aus drei Teilen. Diese beschäftigen sich mit der Untersuchung bestimmter, für Spininjektion relevanter, Halbleiter Heterogrenzflächen, mit neuartigen, verdünnt magnetischen Einzelbarrieren-Tunnelstrukturen, sowie mit der Weiterentwicklung von verdünnt magnetischen Resonanz-Tunneldioden
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Yao-WeiShih and 史曜瑋. "The study on nanopowder preparation by reflux system and sintered bulk for heterovalent dopants strontium titanate." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/47102705782453116099.

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碩士
國立成功大學
材料科學及工程學系
104
In order to get nano-sized strontium titanate powder, La and Nd-doped nano-sized strontium titanate powders were synthesized by reflux system. Using 2-propanol and ethylene glycol as solvents. Non-doped, La and Nd-doped strontium titanate powder were heated at 600 ˚C for 1 h. The heat treated powders were under cold isostatically pressed at 98 MPa, and sintered at 1400 ˚C under highly reducing conditions (5% H2-95% Ar) for 1 h. Characteristics of SrTiO3, Sr0.9La0.1TiO3, and Sr0.9La0.1TiO3 synthesized powders were analysized by XRD, SEM, FT-IR, and TGA. The SrTiO3 powder could be synthesized by 2-propanol at 75 ˚C for 30 min, and by ethylene glycol at 75 ˚C for 90 min as well. The particle size of synthesized SrTiO3 powder was about 100 nm. In order to eliminate impurities, such like nitrate ions etc. adsorbed on the surface of particles, the powders were heated at 600 ˚C in air for 1 h. The relationship between weight loss percentage and heat treatment temperature was obtained. Furthermore, heat treated powders also showed perovskite-SrTiO3 phase without second phase. Non-doped, La and Nd-doped strontium titanate bulk prepared by 2-propanol showed the relative density were over 80 %, and the others prepared by ethylene glycol showed the relative density were over 85 %. The grain sizes of three samples prepared by process A and B were 1-2 μm, 1-2 μm, and 1-5 μm, respectively.
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Books on the topic "Heterovalent"

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International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy (1st 1998 Castelvecchio Pascoli, Italy). Lattice mismatched thin films: Proceedings of the First International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy. Warrendale, Pa: TMS, 1999.

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United Engineering Foundation (U. S.) and Italy) International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy (1st : 1998 : Castelvecchio Pascoli. Lattice Mismatched Thin Films: Proceedings of the First International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy, Sponsored by the United Engineering foundati. Minerals, Metals, & Materials Society, 1998.

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Book chapters on the topic "Heterovalent"

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Shrivastava, Ajay, Matthew von Wronski, Michael F. Tweedle, and Adrian D. Nunn. "Identification of Ideal Peptides for Heterovalent Ligands." In Methods in Molecular Biology, 97–105. Totowa, NJ: Humana Press, 2013. http://dx.doi.org/10.1007/978-1-62703-673-3_7.

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Zhang, Yong-Hang. "Heterovalent Semiconductor Structures and their Device Applications." In Molecular Beam Epitaxy, 463–81. Chichester, UK: John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch28.

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Yakushev, M. V., Yu G. Sidorov, L. V. Sokolov, V. G. Kesler, L. M. Logvinskii, and T. A. Gavrilova. "Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs." In Growth of Crystals, 45–56. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0537-2_5.

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Petot-Ervas, G., F. Gesmundo, and C. Petot. "Influence of Heterovalent Impurities on the Mass Transport in p-Type Semiconducting Oxides." In Transport in Nonstoichiometric Compounds, 155–68. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2519-2_13.

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Pantel, R., L. Clement, L. Rubaldo, G. Borot, and D. Dutartre. "Analytical STEM Comparative Study of the Incorporation of Covalent (Ge) or Heterovalent (As) Atoms in Silicon Crystal." In Springer Proceedings in Physics, 349–52. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8615-1_77.

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Osipov, Vladimir, Vyacheslav Platonov, Vladislav Shitov, and Vladimir Solomonov. "From the Laser Plume to the Laser Ceramics." In Ceramic Materials [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94464.

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The main stages of preparation of ceramic active elements of solid-state lasers are considered. The physical principles of laser synthesis of nanopowders are described. The features and processes taking place during compaction and compacts sintering are specified. Also we report on the investigation of characteristics of highly transparent ceramics on the basis of nanopowders synthesized in laser plume. It is shown that this approach enables to increase the “orange peel” formation threshold in the ceramics with strongly disordered crystalline structure. It opens the road to relatively simple synthesis technology from oxide materials and application of this ceramics as the gain media with oscillation efficiency higher than 50% and also leads to simplification of the synthesis technology of magnetoactive ceramics and to production of highly transparent YAG samples without the use of sintering heterovalent additives.
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Lambrecht, Walter R. L., and Atchara Punya. "Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides." In III-Nitride Semiconductors and their Modern Devices, 519–85. Oxford University Press, 2013. http://dx.doi.org/10.1093/acprof:oso/9780199681723.003.0015.

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Conference papers on the topic "Heterovalent"

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Khomchenko, V. A., N. A. Sobolev, M. Kopcewicz, M. Maglione, and Y. G. Pogorelov. "Heterovalent A-site doping of multiferroic BiFeO3." In 2008 17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF). IEEE, 2008. http://dx.doi.org/10.1109/isaf.2008.4693778.

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Nanakkal, A. R., and L. K. Alexander. "pH modulated graphene based tin oxide heterovalent heterojunction nanocomposites with photocatalytic application." In DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980291.

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Deitz, Julia I., David W. McComb, and Tyler J. Grassman. "Probing the electronic structure at the heterovalent GaP/Si interface using electron energy-loss spectroscopy." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749878.

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Toropov, A. A., Ya V. Terent’ev, S. V. Ivanov, P. S. Kop’ev, T. Koyama, K. Nishibayashi, A. Murayama, and Y. Oka. "Recombination and Spin Dynamics of Excitons in III-V/II-VI:Mn Heterovalent Double Quantum Wells." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730378.

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Chauhan, Sunil, Manoj Kumar, and S. C. Katyal. "Band-gap tuning and magnetic properties of heterovalent ions (Ba, Sr and Ca) substituted BiFeO3 nanoparticles." In DAE SOLID STATE PHYSICS SYMPOSIUM 2015. Author(s), 2016. http://dx.doi.org/10.1063/1.4948135.

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Zhang, Yong-Hang. "Heterovalent II-VI and III-V semiconductor integration: A platform for solar cell and other optoelectronic device applications." In 2017 IEEE Photonics Conference (IPC). IEEE, 2017. http://dx.doi.org/10.1109/ipcon.2017.8116168.

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Tao, Meng. "Metal Oxide Heterovalence Multijunctions for Third Generation Solar Cells." In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279415.

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Reports on the topic "Heterovalent"

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Zunger, Alex. Isovalent Alloying and Heterovalent Substititution as Routes to Accelerate the Development and Optimization of Super-Efficient Halide Perovskite PV Solar Cells. Office of Scientific and Technical Information (OSTI), February 2019. http://dx.doi.org/10.2172/1544426.

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