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Journal articles on the topic 'Heterovalent'

Author: Grafiati

Published: 4 June 2021

Last updated: 17 February 2022

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1

Yao, T., F. Lu, M. W. Cho, K. W. Koh, Z. Zhu, L. H. Kuo, T. Yasuda, et al. "Heterovalent ZnSe/GaAs Interfaces." physica status solidi (b) 202, no. 2 (August 1997): 657–68. http://dx.doi.org/10.1002/1521-3951(199708)202:2<657::aid-pssb657>3.0.co;2-4.

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2

Bennett, M. A., S. K. Bhargava, F. Mohr, L. L. Welling, and A. C. Willis. "Synthesis and X-Ray Structure of a Heterovalent, Cycloaurated Pentafluorophenylgold(I)/Pentafluorophenylgold(III) Complex." Australian Journal of Chemistry 55, no. 4 (2002): 267. http://dx.doi.org/10.1071/ch02034.

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The heterovalent gold(I)/gold(III) complex [(C6F5)AuI(μ-2-Ph2PC6H3-6-Me)AuIII(C6F5){η2-(6-MeC6H3-2-PPh2)}] has been prepared and structurally characterized by X-ray crystallography. It shows square planar stereochemistry at AuIII incorporating a four-membered chelate ring and linear arrangement at AuI. The compound is a rare example of a heterovalent complex containing an aryl ligand on each gold atom.

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3

Костишин, В. Г., В. В. Коровушкин, К. В. Похолок, А. В. Труханов, И. М. Исаев, А. Ю. Миронович, and М. А. Дарвиш. "Особенности катионного распределения и магнитных свойств поликристаллических гексагональных ферритов BaFe-=SUB=-12-x-=/SUB=-Sn-=SUB=-x-=/SUB=-O-=SUB=-19-=/SUB=-." Физика твердого тела 63, no. 10 (2021): 1496. http://dx.doi.org/10.21883/ftt.2021.10.51396.126.

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The cation distribution and magnetic properties of polycrystalline ВаFe12–xSnxO19 (х = 0.0, 0.1, 0.3, 0.6, 0.9 and 1.2) ferrites have been studied for the first time by Fe57 and Sn119 Mössbauer spectroscopy. It was shown that doping of BaFe12O19 with tin is performed with limited heterovalent isomorphism according to the scheme 2Fe3+Sn4+ + Fe2+. It was found that intense heterovalent isomorphic substitutions occur in the 12k site of the BaFe12-xSnxO19 hexaferrite in the range of 0.1 < x < 0.6; less significant substitutions observed in the 4f2 and 2a sites. It was established that the heterovalent isomorphic substitution of tin for iron in BaFe12- xSnxO19 is limited by the values of x in range х = 0.6–0.9 Measurements of the magnetic parameters of the obtained samples were performed. The possibility of practical application of the synthesized ferrites is discussed.

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4

van Veldhuizen, M., J. A. Hendriks, and C. A. J. Appelo. "Numerical computation in heterovalent chromatography." Applied Numerical Mathematics 28, no. 1 (September 1998): 69–89. http://dx.doi.org/10.1016/s0168-9274(98)00016-6.

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5

Li, D., Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, and R. L. Gunshor. "Vacancy ordering at heterovalent interfaces." Surface Science 267, no. 1-3 (January 1992): 181–86. http://dx.doi.org/10.1016/0039-6028(92)91116-s.

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6

Lyu, Feiyi, Xiaoqi Zheng, Yingqiao Wang, Ruowen Shi, Jianli Yang, Ziyue Li, Jiase Yu, and Bo-Lin Lin. "Bi3+ doped 2D Ruddlesden–Popper organic lead halide perovskites." Journal of Materials Chemistry A 7, no. 26 (2019): 15627–32. http://dx.doi.org/10.1039/c9ta04145a.

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7

Florea, Mihaela, Daniel Avram, Bogdan Cojocaru, Ion Tiseanu, Vasile Parvulescu, and Carmen Tiseanu. "Defect induced tunable near infrared emission of Er–CeO2 by heterovalent co-dopants." Physical Chemistry Chemical Physics 18, no. 27 (2016): 18268–77. http://dx.doi.org/10.1039/c6cp02754g.

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8

Li, Ya-Nan, Zi-Xia Chen, Wen-Dong Yao, Ru-Ling Tang, and Sheng-Ping Guo. "Heterovalent cations substitution to design asymmetric chalcogenides with promising nonlinear optical performances." Journal of Materials Chemistry C 9, no. 27 (2021): 8659–65. http://dx.doi.org/10.1039/d1tc01806j.

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9

Miao, Xiaoliang, Ting Qiu, Shufang Zhang, He Ma, Yanqiang Hu, Fan Bai, and Zhuangchun Wu. "Air-stable CsPb1−xBixBr3 (0 ≤ x ≪ 1) perovskite crystals: optoelectronic and photostriction properties." Journal of Materials Chemistry C 5, no. 20 (2017): 4931–39. http://dx.doi.org/10.1039/c7tc00417f.

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10

Taniguchi, Hiroki, Tomohiro Nakane, Takayuki Nagai, Chikako Moriyoshi, Yoshihiro Kuroiwa, Akihide Kuwabara, Masaichiro Mizumaki, Kiyofumi Nitta, Ryuji Okazaki, and Ichiro Terasaki. "Heterovalent Pb-substitution in ferroelectric bismuth silicate Bi2SiO5." Journal of Materials Chemistry C 4, no. 15 (2016): 3168–74. http://dx.doi.org/10.1039/c6tc00584e.

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Systematic tuning of the ferroelectric phase transition in Bi₂SiO₅ was demonstrated using element substitution, where nominally heterovalent Pb was successfully substituted for Bi up to 20%.

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11

Bhunia, Hrishikesh, Biswajit Kundu, Soumyo Chatterjee, and Amlan J. Pal. "Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-à-vis Fermi energy measured through scanning tunneling spectroscopy." Journal of Materials Chemistry C 4, no. 3 (2016): 551–58. http://dx.doi.org/10.1039/c5tc03959b.

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Heterovalent element substitution at both ionic sites of PbS achieved during film formation. The dopants introduced free carriers in the semiconductor affecting the Fermi energy, which has been located by STS studies.

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12

Ohno, Takahisa, and Tomonori Ito. "Electronic structure and stability of heterovalent superlattices." Physical Review B 47, no. 24 (June 15, 1993): 16336–42. http://dx.doi.org/10.1103/physrevb.47.16336.

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13

Qiu, J., D. R. Menke, M. Kobayashi, R. L. Gunshor, D. Li, Y. Nakamura, and N. Otsuka. "Characterization of Ga2Se3at ZnSe/GaAs heterovalent interfaces." Applied Physics Letters 58, no. 24 (June 17, 1991): 2788–90. http://dx.doi.org/10.1063/1.104762.

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14

Aleksandrov, S. M., and M. A. Troneva. "Heterovalent isomorphism in the magnesium-iron borates." Geochemistry International 46, no. 8 (August 2008): 800–813. http://dx.doi.org/10.1134/s0016702908080053.

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15

Lu, F. "Interfacial properties of ZnSe/GaAs heterovalent interfaces." Journal of Crystal Growth 184-185, no. 1-2 (February 1998): 183–87. http://dx.doi.org/10.1016/s0022-0248(97)00754-9.

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16

Lu, F., K. Kimura, S. Q. Wang, Z. Q. Zhu, and T. Yao. "Interfacial properties of ZnSe/GaAs heterovalent interfaces." Journal of Crystal Growth 184-185 (February 1998): 183–87. http://dx.doi.org/10.1016/s0022-0248(98)80318-7.

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17

Zi, J., and W. Ludwig. "Phonons in VI/III-V heterovalent superlattices." Journal of Physics: Condensed Matter 6, no. 18 (May 2, 1994): 3291–300. http://dx.doi.org/10.1088/0953-8984/6/18/005.

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18

Nakayama, Takashi. "Electronic structures of zinc-compound heterovalent superlattices." Superlattices and Microstructures 12, no. 2 (January 1992): 211–13. http://dx.doi.org/10.1016/0749-6036(92)90339-7.

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19

Bénière, F., and K. V. Reddy. "Diffusion of heterovalent ions in ionic crystals." Journal of Physics and Chemistry of Solids 47, no. 1 (January 1986): 69–77. http://dx.doi.org/10.1016/0022-3697(86)90179-4.

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20

Balasubramaniam, M., and S. Balakumar. "Nanostructuring of a one-dimensional zinc antimonate electrode material through a precipitation strategy for use in supercapacitors." New Journal of Chemistry 42, no. 9 (2018): 6613–16. http://dx.doi.org/10.1039/c8nj00196k.

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21

Du, Yachao, Qingwen Tian, Jin Huang, Yuechao Zhao, Xiaohuan Chang, Afei Zhang, and Sixin Wu. "Heterovalent Ga3+ doping in solution-processed Cu2ZnSn(S,Se)4 solar cells for better optoelectronic performance." Sustainable Energy & Fuels 4, no. 4 (2020): 1621–29. http://dx.doi.org/10.1039/c9se00705a.

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A sandwich-like configuration was constructed through the introduction of a heterovalent Ga³⁺ intermediate layer, which facilitates the improvement of the performance of Cu₂ZnSn(S,Se)₄ solar cells.

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22

Kroll, Herbert, Alexej R. Kotelnikov, Jörg Göttlicher, and Elena V. Valyashko. "(K,Sr)-feldspar solid solutions: the volume behaviour of heterovalent feldspars." European Journal of Mineralogy 7, no. 3 (May 19, 1995): 489–500. http://dx.doi.org/10.1127/ejm/7/3/0489.

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23

Rani, Sonia, Gollapally Naresh, and Tapas Kumar Mandal. "Coupled-substituted double-layer Aurivillius niobates: structures, magnetism and solar photocatalysis." Dalton Transactions 49, no. 5 (2020): 1433–45. http://dx.doi.org/10.1039/c9dt04339j.

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Heterovalent coupled-substituted double-layer Aurivillius niobates, LaBi₂Nb_1.5M_0.5O₉ (M = Cr, Mn, Fe, Co), show interesting structural and magnetic characteristics in addition to sunlight-driven photocatalytic activity.

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24

Lu, Yan-Na, Jun-Xing Zhong, Yinye Yu, Xi Chen, Chan-Ying Yao, Chengxi Zhang, Meifang Yang, et al. "Constructing an n/n+ homojunction in a monolithic perovskite film for boosting charge collection in inverted perovskite photovoltaics." Energy & Environmental Science 14, no. 7 (2021): 4048–58. http://dx.doi.org/10.1039/d1ee00918d.

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A simple heterovalent metal halide surface treatment enables formation of n/n⁺ perovskite homojunction, which enlarged built-in electric field and accelerated charge extraction at the perovskite/C₆₀ interface, achieving a high efficiency of 22.2%.

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25

Funato, Mitsuru, Shizuo Fujita, and Shigeo Fujita. "Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures." Journal of Crystal Growth 214-215 (June 2000): 590–94. http://dx.doi.org/10.1016/s0022-0248(00)00159-7.

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26

Klamut, P. W., B. Dabrowski, S. M. Mini, M. Maxwell, J. Mais, I. Felner, U. Asaf, et al. "On the effect of heterovalent substitutions in ruthenocuprates." Physica C: Superconductivity 387, no. 1-2 (May 2003): 33–39. http://dx.doi.org/10.1016/s0921-4534(03)00637-3.

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27

Resta, R., A. Baldereschi [math], and S. Baroni. "Electronic properties of isovalent and heterovalent semiconductor interfaces." Journal de Chimie Physique 86 (1989): 789–98. http://dx.doi.org/10.1051/jcp/1989860789.

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28

Sharma, P., T. Milakovich, M. T. Bulsara, and E. A. Fitzgerald. "Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces." ECS Transactions 50, no. 9 (March 15, 2013): 333–37. http://dx.doi.org/10.1149/05009.0333ecst.

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29

Toropov, A. A., I. V. Sedova, S. V. Sorokin, Ya V. Terent'ev, E. L. Ivchenko, D. N. Lykov, S. V. Ivanov, J. P. Bergman, and B. Monemar. "III–V/II–VI heterovalent double quantum wells." physica status solidi (b) 243, no. 4 (March 2006): 819–26. http://dx.doi.org/10.1002/pssb.200564763.

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30

Sano, Kazuaki, and Takashi Nakayama. "Monte Carlo Simulation of ZnSe/GaAs Heterovalent Epitaxy." Japanese Journal of Applied Physics 39, Part 1, No. 7B (July 30, 2000): 4289–91. http://dx.doi.org/10.1143/jjap.39.4289.

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31

Tⱥle, V., I. Tⱥleand, and L. L. Nagornaya. "Thermoactivated spectroscopy of heterovalent impurity traps in CdWO4." Radiation Effects and Defects in Solids 134, no. 1-4 (December 1995): 477–80. http://dx.doi.org/10.1080/10420159508227272.

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32

Funato, Mitsuru, Shizuo Fujita, and Shigeo Fujita. "Energy states in ZnSe-GaAs heterovalent quantum structures." Physical Review B 60, no. 24 (December 15, 1999): 16652–59. http://dx.doi.org/10.1103/physrevb.60.16652.

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33

Gunshor, R. L., M. Kobayashi, N. Otsuka, and A. V. Nurmikko. "Properties of II–VI/III–V heterovalent interfaces." Journal of Crystal Growth 115, no. 1-4 (December 1991): 652–59. http://dx.doi.org/10.1016/0022-0248(91)90821-l.

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34

Коровушкин, В. В., А. В. Труханов, В. Г. Костишин, И. М. Исаев, И. В. Щетинин, Н. М. Дуров, А. Ю. Миронович, И. О. Минкова, and К. А. Астапович. "Исследование особенностей состава, магнитной и кристаллической структуры гексаферрита бария BaFe-=SUB=-12-x-=/SUB=-Ti-=SUB=-x-=/SUB=-O-=SUB=-19-=/SUB=-." Физика твердого тела 62, no. 5 (2020): 789. http://dx.doi.org/10.21883/ftt.2020.05.49250.622.

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The results of studies of the composition, crystal, and magnetic structure of Ti-substituted barium hexaferrite BaFe12 - xTixO19 (0.25<x<1.5) by Mössbauer spectroscopy, vibration magnetometry, X-ray diffraction, and synchronous thermal analysis are presented. Partial substitution of Fe3 + ions by Ti4 + ions revealed the presence of a limited heterovalent isomorphism realized according to the 2Fe3+ = Ti4+ + Fe2+ while maintaining charge balance. Using Mössbauer spectroscopy, an increase in the electron density of 3d electrons and the presence of Fe2+ in BaFe12 - xTixO19 samples with x = 1.5 were established. The limit of heterovalent isomorphic substitution is established, which is in the range 0.75 <x <1.0. Using Mössbauer spectroscopy and X-ray diffraction, the formation of titanium-containing phases at x = 1, 0, the content of which increases with increasing degree of substitution, is shown. Information is provided on the predominant distribution of substituent ions (Ti4+) in the structure of barium hexaferrite at positions 12k and 2b.

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35

Chebyshev, K. A., A. V. Ignatov, L. V. Pasechnik, N. I. Selikova, and E. I. Get`man. "Investigation of the Heterovalent Substitution Cadmium for Lanthanum in Molybdate La2MoO6." Journal of Chemistry 2021 (May 27, 2021): 1–7. http://dx.doi.org/10.1155/2021/5537048.

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This paper presents the investigation of the heterovalent substitution of cadmium for lanthanum in the La2-xCdxMoO6-x/2 system. The samples were synthesized by the solid state reaction method at 1000°C. The samples were characterized by X-ray powder diffraction with Rietveld refinements, scanning electron microscopy with energy-dispersive X-ray spectroscopy, and Fourier transform infrared spectroscopy methods. The study results revealed that cadmium incorporation in the lanthanum molybdate leads to the transformation of the tetragonal structure of La2MoO6 to a cubic fluorite-like one. The content of the cubic phase reaches 94% in the Lа1.4Cd0.6MoO5.7 sample. The unit cell parameter of fluorite-like-phase decreases with cadmium content rising. The preferred location of cadmium ions in the cubic structure was established by the Rietveld refinement method. The heterovalent substitution cadmium for lanthanide in tetragonal La2MoO6 molybdate leads to the cubic fluorite phase stabilization in a similar way as it occurs in the process of reduction.

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36

Korolyuk, V. N., and G. G. Lepezin. "The coefficients of heterovalent NaSi–CaAl interdiffusion in plagioclases." Russian Geology and Geophysics 50, no. 12 (December 2009): 1146–52. http://dx.doi.org/10.1016/j.rgg.2009.11.013.

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37

SCHMID-BEURMANN, P. "HETEROVALENT SUBSTITUTION IN IRON PHOSPHATES OF THE LAZULITE-TYPE." Phosphorus Research Bulletin 13 (2002): 209–14. http://dx.doi.org/10.3363/prb1992.13.0_209.

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38

Wang, Xiaoyu, Nasir Ali, Gang Bi, Yao Wang, Qibin Shen, Arash Rahimi-Iman, and Huizhen Wu. "Lead-Free Antimony Halide Perovskite with Heterovalent Mn2+ Doping." Inorganic Chemistry 59, no. 20 (October 7, 2020): 15289–94. http://dx.doi.org/10.1021/acs.inorgchem.0c02252.

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39

Klyndyuk, A. I., and E. A. Chizhova. "Heterovalent cation substitutions in the layered compound YBaCuFeO5 + δ." Inorganic Materials 43, no. 8 (August 2007): 866–72. http://dx.doi.org/10.1134/s0020168507080092.

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40

Bellaiche, L., J. Padilla, and David Vanderbilt. "Heterovalent andA-atom effects inA(B′B″)O3perovskite alloys." Physical Review B 59, no. 3 (January 15, 1999): 1834–39. http://dx.doi.org/10.1103/physrevb.59.1834.

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41

Städele, M., J. A. Majewski, and P. Vogl. "Stability and Band Offsets of Heterovalent SiC/GaN Interfaces." Acta Physica Polonica A 88, no. 5 (November 1995): 917–20. http://dx.doi.org/10.12693/aphyspola.88.917.

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42

Lassise, Maxwell B., Peng Wang, Brian D. Tracy, Guopeng Chen, David J. Smith, and Yong-Hang Zhang. "Growth of II-VI/III-V heterovalent quantum structures." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36, no. 2 (March 2018): 02D110. http://dx.doi.org/10.1116/1.5017972.

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43

Pifferi, Carlo, Baptiste Thomas, David Goyard, Nathalie Berthet, and Olivier Renaudet. "Heterovalent Glycodendrimers as Epitope Carriers for Antitumor Synthetic Vaccines." Chemistry – A European Journal 23, no. 64 (October 25, 2017): 16283–96. http://dx.doi.org/10.1002/chem.201702708.

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44

Tung, Raymond T., and Leeor Kronik. "Charge Density and Band Offsets at Heterovalent Semiconductor Interfaces." Advanced Theory and Simulations 1, no. 1 (December 1, 2017): 1700001. http://dx.doi.org/10.1002/adts.201700001.

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45

Petrov, M. I., Yu S. Gokhfeld, D. A. Balaev, S. I. Popkov, A. A. Dubrovskiy, D. M. Gokhfeld, and K. A. Shaykhutdinov. "Pinning enhancement by heterovalent substitution in Y1−xRExBa2Cu3O7−δ." Superconductor Science and Technology 21, no. 8 (June 5, 2008): 085015. http://dx.doi.org/10.1088/0953-2048/21/8/085015.

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46

Nicolini, R., L. Vanzetti, Guido Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, et al. "Local interface composition and band discontinuities in heterovalent heterostructures." Physical Review Letters 72, no. 2 (January 10, 1994): 294–97. http://dx.doi.org/10.1103/physrevlett.72.294.

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47

Funato, Mitsuru, Shizuo Fujita, and Shigeo Fujita. "MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures." Bulletin of Materials Science 18, no. 4 (August 1995): 343–59. http://dx.doi.org/10.1007/bf02749766.

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48

Bonoldi, L., G. L. Calestani, M. G. Francesconi, G. Salsi, M. Sparpaglione, and L. Zini. "Structural stability of bismuth-based superconductors under heterovalent substitution." Physica C: Superconductivity 241, no. 1-2 (January 1995): 37–44. http://dx.doi.org/10.1016/0921-4534(94)02364-6.

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49

Qiu, J., D. R. Menke, M. Kobayashi, R. L. Gunshor, Q. D. Qian, D. Li, and N. Otsuka. "ZnSe/GaAs heterovalent interfaces: interface microstructure versus electrical properties." Journal of Crystal Growth 111, no. 1-4 (May 1991): 747–51. http://dx.doi.org/10.1016/0022-0248(91)91074-k.

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50

Bezryadin, N. N., A. V. Budanov, E. A. Tatokhin, B. L. Agapov, and A. V. Linnik. "Preparation of In2Se3 layers on InAs by heterovalent substitution." Inorganic Materials 36, no. 9 (September 2000): 864–67. http://dx.doi.org/10.1007/bf02758692.

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