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Journal articles on the topic 'Hetrojunction'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Hamid, Kaysar, Muhammad Zobayer Bin Mukhlish, and Md Tamez Uddin. "Sunlight-activated heterostructure MoS₂/CdS nanocomposite photocatalyst with enhanced photocatalytic activity: band alignment and mechanism study." RSC Advances 14, no. 52 (2024): 38908–23. https://doi.org/10.1039/d4ra06857b.

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2

Eck, Michael, Chuyen Van Pham, Simon Züfle, et al. "Improved efficiency of bulk heterojunction hybrid solar cells by utilizing CdSe quantum dot–graphene nanocomposites." Phys. Chem. Chem. Phys. 16, no. 24 (2014): 12251–60. http://dx.doi.org/10.1039/c4cp01566e.

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3

Adem, Kadhim A. "Electronic Properties of PbTe \ Si Hetrojunction." Journal of Al-Nahrain University Science 15, no. 4 (2012): 129–33. http://dx.doi.org/10.22401/jnus.15.4.16.

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4

Sharma, Bhupendra K., Neeraj Khare, and Shahzada Ahmad. "A ZnO/PEDOT:PSS based inorganic/organic hetrojunction." Solid State Communications 149, no. 19-20 (2009): 771–74. http://dx.doi.org/10.1016/j.ssc.2009.02.035.

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5

H. Shallal, Ikhlas, and Balqees A. Ahmed. "Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell." Journal of Engineering and Applied Sciences 14, no. 6 (2019): 9449–54. http://dx.doi.org/10.36478/jeasci.2019.9449.9454.

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6

Rani, Sanju, Manoj Kumar, Yogesh Singh, et al. "NO2 Gas Sensor Based on SnSe/SnSe2p-n Hetrojunction." Journal of Nanoscience and Nanotechnology 21, no. 9 (2021): 4779–85. http://dx.doi.org/10.1166/jnn.2021.19278.

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Air pollution is a big concern as it causes harm to human health as well as environment. NO2 can cause several respiratory diseases even in low concentration and therefore an efficient sensor for detecting NO2 at room temperature has become one of the priorities of the scientific community. Although two dimensional (2D) materials (MoS2 etc.) have shown potential for NO2 sensing at lower temperatures, but these have poor desorption kinetics. However, these limitations posed by slow desorption can be overcome, if a material in the form of a p-n junction can be suitably employed. In this work, ~1

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7

Nayef, Uday Muhsin, Kadhim A. Hubeatir, and Zahraa J. Abdulkareem. "Ultraviolet photodetector based on TiO2 nanoparticles/porous silicon hetrojunction." Optik 127, no. 5 (2016): 2806–10. http://dx.doi.org/10.1016/j.ijleo.2015.12.002.

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8

Ahssan humyan saber, Zaydon Tariq Mohammed Noori, and Kadhim A. Adem. "Electron transport mechanism of SnIn/c-Si Solar cell." Journal of Wasit for Science and Medicine 4, no. 2 (2022): 29–34. http://dx.doi.org/10.31185/jwsm.139.

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In this research was fabricated SnIn/c-Si Hetrojunction Solar Cell, where SnIn/c-Si heterojunction Solar Cell fabricated by deposition of SnIn film with thickness 500 nm on c-Si by using thermal evaporation. Electrical properties of SnIn thin film include d.c conductivity and Hall effect at different annealing temperature. From d.c conductivity found the electrical activation energies Ea1 and Ea2 increase with increasing of annealing temperature from 323K to 348K. From I-V characteristics, measurements efficiency of the found increasing from (1.5 to 4.67)% with increasing of annealing temperat

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9

El-Nahass, M. M., Mossad EL- Metwally, A. A. M. Farag, Shokry Menshawy, F. S. H. Abu-Samaha, and Eman Elesh. "Electrical and photovoltaic properties of CuTPP/p-Si organicinorganic hybrid hetrojunction." IOSR Journal of Applied Physics 6, no. 3 (2014): 22–29. http://dx.doi.org/10.9790/4861-06312229.

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10

Kumar, Neeraj, Shailendra Kumar Dwivedi, Dinesh Chandra Tiwari, and Radha Tomar. "Study of rGO-CNF/Ce-TiO2 based hetrojunction for optoelectronic devices." Materials Letters 315 (May 2022): 131945. http://dx.doi.org/10.1016/j.matlet.2022.131945.

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11

Patra, Shekhar, Sanjay Tiwari, and Umang Singh. "Parametric study of AlGAN/GaN UV-Led Based on Quantum Confined Stark Effect (QCSE)." Journal of Ravishankar University (PART-B) 35, no. 1 (2022): 106–12. http://dx.doi.org/10.52228/jrub.2022-35-1-10.

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III- Nitride materials have radically changed the lighting industry allowing for the developments of high efficiency and brightness ultraviolet LED. In this paper, the characterised between electroluminescence spectra pick wavelength and QW thickness through simulations with presence on electric field. According the QCSE when electric field applied perpendicular to the QWs layers resulted in large read shifts in absorption. I have taken One Dimensional Drift Diffusion charge control solver (1D-DDCC) software for simulations that is solve Passion Schrodinger equation developed by Pro.Yuh-Renn W

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12

Chang, Sheng-Po, and Ting-Hao Chang. "Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction." Journal of Nanomaterials 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/903176.

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The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there

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13

Elfadill, Nezar Gassem, M. Roslan Hashim, Khaled M. Chahrour, and Chun Sheng Wang. "Characterization of Nanocrystalline p-CuO/n-Si Hetrojunction Prepared by RF-Sputtering." Advanced Materials Research 1024 (August 2014): 120–23. http://dx.doi.org/10.4028/www.scientific.net/amr.1024.120.

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Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}Nanocrystalline cupric oxide (CuO) film was prepared by sputtering of pure copper metal on n-type single crystalline Si substrate under argon-oxygen ambient. Structural and morphologic

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14

Htay, Myo Than, Yoshio Hashimoto, Noritaka Momose, et al. "A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes." Japanese Journal of Applied Physics 50, no. 3R (2011): 032301. http://dx.doi.org/10.7567/jjap.50.032301.

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15

Htay, Myo Than, Yoshio Hashimoto, Noritaka Momose, et al. "A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes." Japanese Journal of Applied Physics 50 (March 22, 2011): 032301. http://dx.doi.org/10.1143/jjap.50.032301.

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16

Mousa, Ali M., and Karem H. Jawad. "Performance of a Nano PbS/Si Hetrojunction Deposited by Chemical Spray Pyrolysis." International Letters of Chemistry, Physics and Astronomy 51 (May 2015): 13–16. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.51.13.

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Deposition of polycrystalline Lead sulfide nanothin films onto Si and glass substrates at temperatures (200-300 °C) was carried out by chemical spraying route using optimized preparative conditions. The XRD pattern confirmed the formation of PbS semiconducting films with orthorhombic structure. The electrical and optical properties of the nanocrystalline thin films were studied aiming to better understanding for the electrical and opto-electrical properties of a hetrojunction with p-type Si. It was found that, the average grain size of PbS in the films was between 4 nm and 7 nm. The band gap w

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17

Salah, A., M. F.Alias, A. Kadhum, and H. Kh.Al-Lamy. "Characteristic of I-V , C-V for a-Ge:Sb/c-GaAs Hetrojunction." International Journal of Thin Films Science and Technology 2, no. 2 (2013): 77–83. http://dx.doi.org/10.12785/ijtfst/020203.

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18

Mousa, Ali M., and Karem H. Jawad. "Performance of a Nano PbS/Si Hetrojunction Deposited by Chemical Spray Pyrolysis." International Letters of Chemistry, Physics and Astronomy 51 (May 15, 2015): 13–16. http://dx.doi.org/10.56431/p-4f9xb7.

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Deposition of polycrystalline Lead sulfide nanothin films onto Si and glass substrates at temperatures (200-300 °C) was carried out by chemical spraying route using optimized preparative conditions. The XRD pattern confirmed the formation of PbS semiconducting films with orthorhombic structure. The electrical and optical properties of the nanocrystalline thin films were studied aiming to better understanding for the electrical and opto-electrical properties of a hetrojunction with p-type Si. It was found that, the average grain size of PbS in the films was between 4 nm and 7 nm. The band gap w

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19

Hamada, Majdi, and Ali ELastal. "Surface Polaritons in GAAS/ALGAAS/LH Hetrojunction Structure in a High Magnetic Field." International Journal of Recent Advances in Physics 4, no. 4 (2015): 15–26. http://dx.doi.org/10.14810/ijrap.2015.4402.

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20

Kadhum, Atyaf H. "The structure and optical properties of organic semiconductor bulk hetrojunction blend (NiPcTs/Alq3) thin films." Iraqi Journal of Physics (IJP) 15, no. 33 (2019): 40–48. http://dx.doi.org/10.30723/ijp.v15i33.138.

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The effect of heat treatment on the optical properties of the bulk heterojunction blend nickel (II) phthalocyanine tetrasulfonic acid tetrasodium salt and Tris (8-hydroxyquinolinato) Aluminum (NiPcTs/Alq3) thin films which prepared by spin coating was described in this study. The films coated on a glass substrate with speed of 1500 rpm for 1.5 min and treated with different annealing temperature (373, 423 and 473) K. The samples characterized using UV-Vis, X ray diffraction and Fourier transform Infrared (FTIR) spectra, XRD patterns indicated the presence of amorphous and polycrystalline blend

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21

A. Monef, Rafea, Riad A. Asmiel, and Sabre G. Mohmmed. "Fabrication of Hetrojunction Detector ZnO0.95Mg0.05/Si Using Chemical Spray Pyrolysis Method and Studying Electrical Characteristics." Rafidain Journal of Science 27, no. 1 (2018): 135–44. http://dx.doi.org/10.33899/rjs.2018.141106.

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22

Abuelma'atti, M. "Carrier-to-Intermodulation Performance of Multiple FM/FDM Carriers Through a GaA1As Hetrojunction Laser Diode." IEEE Transactions on Communications 33, no. 3 (1985): 246–48. http://dx.doi.org/10.1109/tcom.1985.1096283.

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23

Mahdavifar, Zabiollah, and Hoda Salmanizadeh. "A quantum chemical study of the factors influencing performance of DTTTD: Fullerene hetrojunction photovoltaic models." Journal of Photochemistry and Photobiology A: Chemistry 310 (September 2015): 9–25. http://dx.doi.org/10.1016/j.jphotochem.2015.05.005.

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24

Abera, Newayemedhin, and Genene Tessema. "Compositional dependence of the performance of bulk hetrojunction solar cells based on PTOPT and PCBM." Canadian Journal of Physics 91, no. 1 (2013): 89–92. http://dx.doi.org/10.1139/cjp-2012-0340.

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The compositional dependence of the performance of the blends of [3-(4-octylphenol)-2,2′-bithiophene] (PTOPT) and 6,6-phenyl-C61-butric acid methyl ester (PCBM) sandwiched between ITO/PEDOT:PSS and Al was studied. The observed dark current–voltage curves showed that the current (J) is space charge limited except at low voltages (V). The best power conversion efficiency (η) and short circuit current (JSC) were found at 72% PCBM loading. Moreover, we have observed significant reduction on the fill factor with increasing PCBM concentration due to high recombination of charge carriers. The impedan

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25

Abdullah, S. A., M. H. Jaduaa, and A. N. Abd. "Preparation of Bismuth Oxide Nanoparticles/PSi/Si hetrojunction by simple chemical method for solar cell applications." Journal of Physics: Conference Series 1853, no. 1 (2021): 012045. http://dx.doi.org/10.1088/1742-6596/1853/1/012045.

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26

Suman, C. K., Seunguk Noh, Seohee Kim, et al. "Electrical Impedance Studies of the Effect of a Buffer Layer on Organic Bulk Hetrojunction Solar Cells." Journal of the Korean Physical Society 53, no. 6 (2008): 3278–82. http://dx.doi.org/10.3938/jkps.53.3278.

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27

Huang, Chien‐Chang, and Wu‐Chieh Lin. "Design of high‐efficiency SiGe hetrojunction bipolar transistor linear power amplifier with new adaptive bias configuration." IET Microwaves, Antennas & Propagation 7, no. 4 (2013): 230–36. http://dx.doi.org/10.1049/iet-map.2012.0419.

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28

Noh, Young Wook, In Su Jin, Sang Hyun Park, and Jae Woong Jung. "Room-temperature synthesis of ZrSnO4 nanoparticles for electron transport layer in efficient planar hetrojunction perovskite solar cells." Journal of Materials Science & Technology 42 (April 2020): 38–45. http://dx.doi.org/10.1016/j.jmst.2019.11.008.

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29

H. Rashed, Halah. "Post Thermal Oxidation of Tin Thin Film on Silicon Substrate for MIS Hetrojunction Prepared by Thermal Evaporation." Engineering and Technology Journal 34, no. 4 (2016): 499–511. http://dx.doi.org/10.30684/etj.34.4b.7.

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30

Lee, Jong-Ho, Young-Ki Lee, Young-Jig Kim, Kyung-Wook Jang, and Han-Jun Oh. "Synthesis and Characteristics of Pd/r-TiO<sub>2</sub> Nanotube Arrays Hetrojunction Photocatalyst." Korean Journal of Materials Research 32, no. 1 (2022): 14–22. http://dx.doi.org/10.3740/mrsk.2022.32.1.14.

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31

Jabeen, Uzma, Tham Adhikari, Dinesh Pathak, Syed Mujtaba Shah, and Jean-Michel Nunzi. "Structural, optical and photovoltaic properties of P3HT and Mn-doped CdS quantum dots based bulk hetrojunction hybrid layers." Optical Materials 78 (April 2018): 132–41. http://dx.doi.org/10.1016/j.optmat.2018.02.019.

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32

Bhatt, Rinkesh, Ashish Tiwari, D. S. Bisen, and A. K. Bajpai. "Analyzing p-type Conjugated Conducting Poly (diaminonaphthalene) Doped Poly (vinyl alcohol) Bulk Hetrojunction Film for Organic Solar Cells." Materials Today: Proceedings 5, no. 1 (2018): 1673–78. http://dx.doi.org/10.1016/j.matpr.2017.11.262.

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33

Lee, Yi-Mu, and Chun-Hung Lai. "Preparation and characterization of solid n-TiO2/p-NiO hetrojunction electrodes for all-solid-state dye-sensitized solar cells." Solid-State Electronics 53, no. 10 (2009): 1116–25. http://dx.doi.org/10.1016/j.sse.2009.07.004.

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34

Pathak, Dinesh. "Inverted Ternary Bulk Hetrojunction Hybrid Photovoltaic Device Based On AgInSe2 –Polymer Blend As Absorber And PEDOT: PSS As Hole Transport Layer." Advanced Materials Letters 6, no. 5 (2015): 421–24. http://dx.doi.org/10.5185/amlett.2015.5781.

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35

Solaymani, Shahram, Ştefan Ţălu, Negin Beryani Nezafat, et al. "Optical properties and surface dynamics analyses of homojunction and hetrojunction Q/ITO/ZnO/NZO and Q/ITO/ZnO/NiO thin films." Results in Physics 29 (October 2021): 104679. http://dx.doi.org/10.1016/j.rinp.2021.104679.

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36

Chi, Chih-Chin, Yu-Jui Huang, and Chin-Ti Chen. "Synthesis and Spectroscopic Characterization of Dual Absorption BODIPY Type Dyes and their Light Harvesting Application in Polymer-Based Bulk Hetrojunction Organic Photovoltaics." Journal of the Chinese Chemical Society 59, no. 3 (2012): 305–16. http://dx.doi.org/10.1002/jccs.201100612.

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37

Suzuki, Asamira, Songbeak Choe, Yasuhiro Yamada, Nobuyuki Otsuka, and Daisuke Ueda. "NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer." Japanese Journal of Applied Physics 55, no. 12 (2016): 121001. http://dx.doi.org/10.7567/jjap.55.121001.

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38

Tsegaye, Tadesse. "Application of Conjugated Organic Polymers for Photovoltaic's: Review." Journal of Physical Chemistry & Biophysics 8, no. 1 (2018): 01–06. https://doi.org/10.5281/zenodo.14848218.

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Photovoltaic effect is the emergence of a voltage between electrodes attached to a solid or liquid system up on shining light on to this system. Conjugated polymer is a molecular entity whose structure is represented as a system of alternating single and double bonds which give rise to their semi-conductor properties. Conjugated polymers are used for photovoltaic devices because, intrinsically stable up on photoexcitation with visible light, High absorption cross-section for photon harvesting, Tunable band gap with in the entire visible spectral range and High yield of charge generation when m

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39

Ghouri, M. I., E. Ahmed, Absar Ali, Muhammad Ajmal, and M. Ramzan. "The synergistic role of ternary combined semiconductors (Nb2O5–MoS2-MO) hetrojunctions in photocatalytic water splitting." Materials Chemistry and Physics 255 (November 2020): 123320. http://dx.doi.org/10.1016/j.matchemphys.2020.123320.

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40

Majdi, S. Hamada. "Surface Polaritons in GAAS/ALGAAS/LH Hetrojunction Structure in a High Magnetic Field." November 1, 2015. https://doi.org/10.5281/zenodo.1199846.

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The surface polaritons (SP) variation in Ga As/ Al Ga As/ LH hetrojunction composition in the presence of a strong transverse quantized magnetic field is estimated using the quantum Hall effect case. The dispersion characteristics of the SPs are investigated using the dielectric constants values of the Ga As and the Alx Ga 1-x As media and the defined thickness, the Alx Ga 1-x As medium. The dispersion behaviours calculated results are listed for considered cases. It was shown that the frequency values against the wave vector values are affected in a strong manner by changing thickness, of the

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41

Hosseini, Soghra, Laya Dejam, and Hossain Elahi. "The characterization of amorphous AZO-n/Si-p hetrojunction diode for solar cell application." Optical and Quantum Electronics 54, no. 3 (2022). http://dx.doi.org/10.1007/s11082-022-03550-w.

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42

Yang, Xudong, Yinlong Li, Junfeng Zhao, et al. "A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells." ECS Journal of Solid State Science and Technology, February 17, 2023. http://dx.doi.org/10.1149/2162-8777/acbcf0.

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Abstract NiOx is a p-type semiconductor material with wide band-gap (3.6-4.0 eV) and good thermal and chemical stability. In terms of energy band structure, NiOx/n-Si possesses low valence band offset to allow holes and high conduction band offset to block electrons. NiOx is thus a promising hole-selective layer for n-type c-Si based heterojunction (HJT) solar cells. However, intrinsic NiOx suffers from low carrier concentration and poor conductivity, which severely limits its development in photovoltaics. This study aimed to obtain Ag-doped NiOx film with high carrier concentration and low re

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43

Song, Young J., Hak-Gyu Lee, Lihong Teng, and Wayne A. Anderson. "Nanocrystalline Silicon by Microwave CVD for Thin Film Transistors and Solar Cells." MRS Proceedings 638 (2000). http://dx.doi.org/10.1557/proc-638-f14.22.1.

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AbstractMicrowave chemical vapor deposition (MCVD) is utilized to deposit nanocrystalline silicon (nc-si) thin films onto a variety of substrates for application to thin film transistors (TFT's) and solar cells. It is especially important to gain reproducible control of the processing. Thus, an in-situ mass spectrometer (MS) records the plasma conditions with variation of process conditions such as gas selection, pressures, partial pressures, and substrate temperature. These data are correlated with electrical and optical properties of the films. Raman spectra show a FWHM of 11/cm with positio

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44

Latief, Estabrk Abd, Ali Taher Mohi, and Ahmed N. Abd. "Effect of natural dye on the spectral response of the hetrojunction Ag/ZnO/PS/Si/Ag for phtodtector application." International Journal of Nanoscience, July 21, 2023. http://dx.doi.org/10.1142/s0219581x23500485.

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45

Verma, Priyanka, and Satyendra Kumar. "Performance assessment of a GaSb/Si based dual material stacked double-gate hetrojunction TFET for label free biosensing applications." Journal of Computational Electronics 24, no. 3 (2025). https://doi.org/10.1007/s10825-025-02321-6.

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46

Abdussalam, Balarabe Suleiman, Said Abdullahi Sabiu, E. Ndikilar Chifu, and Isiyaku Sabo. "FABRICATION OF ZNO/CU2O AND TIO2/CU2O HETEROJUNCTION SOLAR CELL USING SPRAY PYROLYSIS METHOD." December 25, 2017. https://doi.org/10.5281/zenodo.1156008.

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FTO-ZnO/Cu2O-Cu and FTO-TiO2/Cu2O-Cu Solar cells were fabricated by electrodeposition of Cu2O on the sprayed pyrolysised ZnO and TiO2 films, the compositional, optical as well as electrical properties of the cell was studied using EDX, UV-Visible and Solar simulator respectively. The optical measurement shows that both ZnO and TiO2 have higher transmittance when compared to Cu2O. The band gap of Cu2O TiO2, and ZnO, were found to be 2.32eV, 3.7eV and 3.75eV respectively. I-V characteristic curve confirm the rectifying behavior of the cells. The short circuit current density, open circuit voltag

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