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Journal articles on the topic 'Hexagonal-boron nitride (h-BN)'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Li, Yunfang. "Boron-nitride nanotube triggered self-assembly of hexagonal boron-nitride nanostructure." Phys. Chem. Chem. Phys. 16, no. 38 (2014): 20689–96. http://dx.doi.org/10.1039/c4cp02578d.

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Molecular mechanics results show that a hexagonal boron nitride (h-BN) membrane can spontaneously assemble on the single-walled boron nitride nanotube (BNNT) in a scroll or helical manner, showing an interesting dependence on h-BN width.

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2

Xu, N., J. F. Li, B. L. Huang, and B. L. Wang. "Polycrystalline boron nitride constructed from hexagonal boron nitride." RSC Adv. 4, no. 73 (2014): 38589–93. http://dx.doi.org/10.1039/c4ra05485g.

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3

Lee, Jae-Kap, Jin-Gyu Kim, K. P. S. S. Hembram, Seunggun Yu, and Sang-Gil Lee. "AB-stacked nanosheet-based hexagonal boron nitride." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 77, no. 2 (March 17, 2021): 260–65. http://dx.doi.org/10.1107/s2052520621000317.

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Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (∼10–500 nm in thickness) exhibit stacks of parallel nanosheets (∼10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2–20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as `substrate-induced 2D growth', where the substrate plays the role of pressure.

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4

Tang, Yongzhe, Peng Zhang, Mingxiao Zhu, Jiacai Li, Yuxia Li, Ziguo Wang, and Liangsong Huang. "Temperature Effects on the Dielectric Properties and Breakdown Performance of h-BN/Epoxy Composites." Materials 12, no. 24 (December 9, 2019): 4112. http://dx.doi.org/10.3390/ma12244112.

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Epoxy–boron nitride composites are promising insulating materials, and it is highly important to understand their insulating performances at different temperatures with different nano-doping amounts. In this study, we investigated the effects of different mass fractions of epoxy–micron hexagonal boron nitride composites on their thermal conductivity, as well as the effects of temperature and mass fraction on their insulating performances. The results demonstrated that the thermal conductivity of epoxy–micron hexagonal boron nitride composites was superior to that of neat epoxy. The thermal conductivity of epoxy–micron hexagonal boron nitride composites increased with the mass fraction of hexagonal boron nitride, and their dielectric constant and dielectric loss increased with temperature. The dielectric constant of epoxy–micron hexagonal boron nitride composites decreased as the mass fraction of hexagonal boron nitride increased, while their dielectric losses decreased and then increased as the mass fraction of hexagonal boron nitride increased. Due to internal heat accumulation, the alternating current breakdown strength of epoxy–micron hexagonal boron nitride composites increased and then decreased as the mass fraction of hexagonal boron nitride increased. Additionally, as the temperature increased, the composites transitioned from the glassy state to the rubbery or viscous state, and the breakdown strength significantly degraded.

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5

Корте, Ш., М. К. Кутжанов, А. М. Ковальский, А. С. Конопацкий, Д. Г. Квашнин, Е. М. Приходько, П. Б. Сорокин, Д. В. Штанский, and А. Т. Матвеев. "Получение гетерогенных наночастиц Al/BN в микроволновой плазме." Письма в журнал технической физики 46, no. 10 (2020): 25. http://dx.doi.org/10.21883/pjtf.2020.10.49427.18154.

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In this work, the interaction of a mixture of Al and BN nanopowder with hydrogen microwave plasma was studied. Using X-ray diffraction analysis, scanning and transmission electron microscopy, the formation of AlN and AlB2 nanocrystals as a result of short-term (~ 30 ms) interaction of Al vapor with h-BN was established. Obtained results also indicate the formation of hydrogenated hexagonal boron nitride h-BN-H. The critical shear stresses were calculated for the interfaces between BN and Al, AlB2, and AlN. Approaches for increasing the strength of the composite materials based on hexagonal boron nitride and aluminum are discussed.

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6

Jin, Moon-Seog, and Nam-Oh Kim. "Photoluminescence of Hexagonal Boron Nitride (h-BN) Film." Journal of Electrical Engineering and Technology 5, no. 4 (November 1, 2010): 637–39. http://dx.doi.org/10.5370/jeet.2010.5.4.637.

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7

Cataldo, Franco, and Susana Iglesias-Groth. "Neutron damage of hexagonal boron nitride: h-BN." Journal of Radioanalytical and Nuclear Chemistry 313, no. 1 (May 18, 2017): 261–71. http://dx.doi.org/10.1007/s10967-017-5289-8.

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8

Eichler, Jens, Krishna Uibel, and Christoph Lesniak. "Boron Nitride (BN) and Boron Nitride Composites for Applications under Extreme Conditions." Advances in Science and Technology 65 (October 2010): 61–69. http://dx.doi.org/10.4028/www.scientific.net/ast.65.61.

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Hexagonal boron nitride (h-BN) is a very versatile material that is used in a number of applications due to its unique combination of properties. This paper reviews typical h-BN qualities and their applications as functional particle in coatings and as sintered parts. As an example, the EKamold® coating family is presented in detail for a variety of substrate types and applications. Furthermore a general overview is given of the effect of the binder phase for hot-pressed h-BN qualities. And finally the use of h-BN as a composite with a) zirconium oxide for side dams in steel thin-strip casting and b) with titanium diboride as evaporation boats is described in more detail.

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9

Harrison, Haley, Jason T. Lamb, Kyle S. Nowlin, Andrew J. Guenthner, Kamran B. Ghiassi, Ajit D. Kelkar, and Jeffrey R. Alston. "Quantification of hexagonal boron nitride impurities in boron nitride nanotubes via FTIR spectroscopy." Nanoscale Advances 1, no. 5 (2019): 1693–701. http://dx.doi.org/10.1039/c8na00251g.

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The peak ratio of in-plane versus out-of-plane FTIR absorbance is proportional to weight% of hexagonal boron nitride (h-BN) in boron nitride nanotubes (BNNTs) and can be used to quantify the purity of synthesized BNNTs.

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10

Snure, Michael, and Qing S. Paduano. "Growth of Hexagonal Boron Nitride on Microelectronic Compatible Substrates." MRS Proceedings 1781 (2015): 1–10. http://dx.doi.org/10.1557/opl.2015.562.

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ABSTRACTBoron nitride has attracted a great deal of attention as a two dimensional (2D) insulator for substrate and gate dielectric applications in 2D electronics. Development of a scalable technique to grow mono- to few-layer h-BN on microelectronics compatible substrates is desirable. Work on the growth of atomically smooth BN and graphene on sapphire and Si is presented in this paper. Two approaches are described: i) growth of h-BN and graphene on Si and sapphire substrates using a catalyzing Cu thin film, and ii) low pressure metal organic chemical vapor deposition (MOCVD) growth on sapphire. In approach i) we discuss problems associated with the thermal instability of Cu at the interface with the substrate and show how the stability may be improved through the use of a thin Ni buffer layer or careful substrate selection. The correlation between Cu film morphology and h-BN (and graphene) quality is shown. In approach ii) we find two different growth modes, 3D island growth at low V/III ratios and self-terminating growth at high V/III ratios. Under self-terminating growth atomically smooth few-layer h-BN films are produced. Nitridation of the sapphire surface is found to promote this self-terminating growth by improving nucleation of BN on the substrate. Finally, we present results from the growth of graphene/h-BN on sapphire in a single process.

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11

Chen, Lingxiu, Haomin Wang, Shujie Tang, Li He, Hui Shan Wang, Xiujun Wang, Hong Xie, et al. "Edge control of graphene domains grown on hexagonal boron nitride." Nanoscale 9, no. 32 (2017): 11475–79. http://dx.doi.org/10.1039/c7nr02578e.

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The edge control of graphene domains on hexagonal boron nitride (h-BN) is demonstrated by modifying the ratio of working-gases, demonstrating a potential approach to fabricate smooth-edge graphene ribbons on h-BN.

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12

Odlyzko, Michael L., and K. Andre Mkhoyan. "Identifying Hexagonal Boron Nitride Monolayers by Transmission Electron Microscopy." Microscopy and Microanalysis 18, no. 3 (April 12, 2012): 558–67. http://dx.doi.org/10.1017/s143192761200013x.

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AbstractMultislice simulations in the transmission electron microscope (TEM) were used to examine changes in annular-dark-field scanning TEM (ADF-STEM) images, conventional bright-field TEM (BF-CTEM) images, and selected-area electron diffraction (SAED) patterns as atomically thin hexagonal boron nitride (h-BN) samples are tilted up to 500 mrad off of the [0001] zone axis. For monolayer h-BN the contrast of ADF-STEM images and SAED patterns does not change with tilt in this range, while the contrast of BF-CTEM images does change; h-BN multilayer contrast varies strongly with tilt for ADF-STEM imaging, BF-CTEM imaging, and SAED. These results indicate that tilt series analysis in ADF-STEM image mode or SAED mode should permit identification of h-BN monolayers from raw TEM data as well as from quantitative post-processing.

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13

Kroes, J. M. H., A. Fasolino, and M. I. Katsnelson. "Energetics, barriers and vibrational spectra of partially and fully hydrogenated hexagonal boron nitride." Physical Chemistry Chemical Physics 18, no. 28 (2016): 19359–67. http://dx.doi.org/10.1039/c6cp01018k.

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14

Jayaprakash, Gururaj Kudur, and Roberto Flores-Moreno. "Regioselectivity in hexagonal boron nitride co-doped graphene." New Journal of Chemistry 42, no. 23 (2018): 18913–18. http://dx.doi.org/10.1039/c8nj03679a.

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15

Çakmakçı, Emrah, and Seyfullah Madakbaş. "Preparation and Characterization of Polyaniline/Hexagonal Boron Nitride Composites." High Temperature Materials and Processes 32, no. 6 (December 1, 2013): 557–61. http://dx.doi.org/10.1515/htmp-2013-0003.

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AbstractPolyaniline (PANI) is one of the most studied conductive polymer with several unique properties and good conductivity. In this study it was aimed to prepare Polyaniline (PANI)/Hexagonal boron nitride (h-BN) composites. Chemical structures of the composites were characterized by FTIR analysis. Thermal properties of these novel composites were analyzed by TGA and DSC measurements. Glass transition temperatures and char yields of the composites increased with increasing h-BN percentage. FTIR, XRD and UV measurements indicated that the boron atoms in h-BN particles interact with the unpaired electrons in nitrogen atoms of PANI. Dielectric measurements revealed dipolar polarization behavior of the composites.

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16

Tharajak, Jirasak, Tippaban Palathai, and Narongrit Sombatsompop. "Tribological Properties of Flame Sprayed Hexagonal Boron Nitride/Polyetheretherketone Coatings." Advanced Materials Research 410 (November 2011): 333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.410.333.

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Hexagonal boron nitride (h-BN)/polyetheretherketone (PEEK) composite powders were deposited on carbon steel substrate via the flame spray coating technique. The content of hexagonal boron nitride with a mean particle size of 0.5 micrometer was varied from 2 to 8 wt% in this work. Tribological properties, namely specific wear rate and friction coefficient, at room temperature, 100 °C and 200°C were performed using Ball-on-Disc sliding wear test. At elevated temperature, h-BN could result in marked decrease in the friction coefficients and specific wear rates.

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17

Kumar, Vijayesh, Kumar Nikhil, Partha Roy, Debrupa Lahiri, and Indranil Lahiri. "Emergence of fluorescence in boron nitride nanoflakes and its application in bioimaging." RSC Advances 6, no. 53 (2016): 48025–32. http://dx.doi.org/10.1039/c6ra05288f.

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18

Shankar, Ravi, Michael Sachs, Laia Francàs, Daphné Lubert-Perquel, Gwilherm Kerherve, Anna Regoutz, and Camille Petit. "Porous boron nitride for combined CO2 capture and photoreduction." Journal of Materials Chemistry A 7, no. 41 (2019): 23931–40. http://dx.doi.org/10.1039/c9ta02793a.

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Moving from hexagonal boron nitride (h-BN), a well-known crystalline insulator, to amorphous BN, leads to the creation of a semiconductor able to photoreduce CO₂ in the gas/solid phase, under UV-vis and pure visible light.

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19

Hong, S. J., H. Kang, M. Park, M. Lee, D. Soler-Delgado, D. H. Jeong, Y. W. Park, and B. H. Kim. "Competition between electron doping and short-range scattering in hydrogenated bilayer graphene on hexagonal boron nitride." RSC Advances 5, no. 125 (2015): 103276–79. http://dx.doi.org/10.1039/c5ra18945d.

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20

Zhang, Ning, Ting Ting Fu, Fei Yi Yang, Hong Min Kan, Xiao Yang Wang, and Hai Bo Long. "The Effect of Sucrose on Adsorption Properties of Hexagonal Boron Nitride Powders." Key Engineering Materials 602-603 (March 2014): 134–37. http://dx.doi.org/10.4028/www.scientific.net/kem.602-603.134.

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In the work reported here, boron source is borax, carbon source is sucrose and the nitrogen source is urea, polymer-network method is applied to prepare the hexagonal boron nitride (h-BN) precursor, and then synthesized the h-BN powders with high purity and high surface area. As the sucrose content is fixed, we study the effect of carbonization temperature on phase composition and adsorption properties of h-BN powders. As the carbonization temperature is fixed, the effect of sucrose content on phase composition and adsorption properties of h-BN powders are studied. The results show that the optimum carbonization temperature is 220°C, and when the sucrose content reach 17.45wt.%, the h-BN powders showed the best adsorption properties.

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21

Harrison, Haley B., and Jeffrey R. Alston. "Sonochemical Functionalization of Boron Nitride Nanomaterials." MRS Advances 5, no. 14-15 (December 27, 2019): 709–16. http://dx.doi.org/10.1557/adv.2019.487.

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AbstractBoron nitride nanotubes (BNNTs) and hexagonal boron nitride platelets (h-BNs) have received considerable attention for aerospace insulation applications due to their exceptional chemical and thermal stability. Presently, making BN nanomaterials compatible with polymer and composite matrices is challenging. Due to their inert and highly stable structure, h-BN and BNNTs are difficult to covalently functionalize. In this work, we present a novel sonochemical technique that enables covalent attachment of fluoroalkoxy substituents to the surface of BN nanomaterials in a controlled and metered process. Covalent functionalization is confirmed via colloidal stability analysis, FT-IR, and x-ray photoelectron spectroscopy (XPS).

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22

Yu, Bin, Weiyi Xing, Wenwen Guo, Shuilai Qiu, Xin Wang, Siuming Lo, and Yuan Hu. "Thermal exfoliation of hexagonal boron nitride for effective enhancements on thermal stability, flame retardancy and smoke suppression of epoxy resin nanocomposites via sol–gel process." Journal of Materials Chemistry A 4, no. 19 (2016): 7330–40. http://dx.doi.org/10.1039/c6ta01565d.

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23

Song, J., J. Wu, Y. Huang, K. C. Hwang, and H. Jiang. "Stiffness and Thickness of Boron-Nitride Nanotubes." Journal of Nanoscience and Nanotechnology 8, no. 7 (July 1, 2008): 3774–80. http://dx.doi.org/10.1166/jnn.2008.18342.

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We establish an analytic approach to determine the tensile and bending stiffness of a hexagonal boron-nitride (h-BN) monolayer and singleand multi-wall boron-nitride nanotubes (BNNTs) directly from the interatomic potential. Such an approach enables one to bypass atomistic simulations and to give the tensile and bending stiffness in terms of the parameters in the potential. For single- and multi-wall BNNTs, the stiffness also depends on the (inner most or outer most) wall radius and the number of the walls. The thickness of h-BN monolayer is also discussed.

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24

Fan, Yongzhe, Huazhen Yang, Haisheng Fan, Qi Liu, Chuang Lv, Xue Zhao, Mingxu Yang, Jianjun Wu, and Xiaoming Cao. "Corrosion Resistance of Modified Hexagonal Boron Nitride (h-BN) Nanosheets Doped Acrylic Acid Coating on Hot-Dip Galvanized Steel." Materials 13, no. 10 (May 19, 2020): 2340. http://dx.doi.org/10.3390/ma13102340.

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The hexagonal boron nitride (h-BN) nanosheets modified by silane coupling agent (KH560) were doped into acrylic acid coating on the surface of galvanized steel to improve its corrosion resistance. H-BN nanosheets modified by KH560 were prepared and characterised by scanning electron microscopy, transmission electron microscopy, atomic force microscopy, X-ray diffraction, and Fourier-transform infrared spectroscopy. The corrosion resistance of the acrylic acid coatings was measured by electrochemical testing. The results show that the corrosion current density of the coating with modified h-BN nanosheets was reduced from 2.2 × 10−5 A/cm2 to 2.3 × 10−7 A/cm2 compared with the acrylic acid coating. The impedance of the composite coating with modified h-BN is 4435 Ω·cm2, higher than the BNNS coating (2500 Ω·cm2) and the acrylic acid coating (1500 Ω·cm2). This is due to the physical barrier and electrical insulation properties of the hexagonal boron nitride (h-BN) nanosheets.

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25

Lu, Hao, Junfeng Gao, Ziyu Hu, and Xiaohong Shao. "Biaxial strain effect on electronic structure tuning in antimonene-based van der Waals heterostructures." RSC Advances 6, no. 104 (2016): 102724–32. http://dx.doi.org/10.1039/c6ra21781h.

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By combining antimonene (Sb) with semimetal grapheme (G), semiconductor arsenene (As) and insulator hexagonal boron nitride (h-BN), three new 2D van der Waals (vdW) heterostructures, namely, G/Sb, As/Sb and h-BN/Sb, are designed and discussed.

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26

Cui, Mingjun, Siming Ren, Songlv Qin, Qunji Xue, Haichao Zhao, and Liping Wang. "Non-covalent functionalized hexagonal boron nitride nanoplatelets to improve corrosion and wear resistance of epoxy coatings." RSC Advances 7, no. 70 (2017): 44043–53. http://dx.doi.org/10.1039/c7ra06835b.

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In the present study, a non-covalent method was employed to modify hexagonal boron nitride (h-BN) nanoplateletsviaπ–π interaction of amine-capped aniline trimer (AT), which resulted in a stable dispersion of h-BN nanoplatelets in organic solvents.

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27

Wang, Yong, Carmen C. Mayorga-Martinez, Xinyi Chia, Zdeněk Sofer, and Martin Pumera. "Nonconductive layered hexagonal boron nitride exfoliation by bipolar electrochemistry." Nanoscale 10, no. 15 (2018): 7298–303. http://dx.doi.org/10.1039/c8nr00082d.

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28

Li, Qun, Wenpo Luo, Lei Su, Junhong Chen, Kuo-Chih Chou, and Xinmei Hou. "An amperometric glucose enzyme biosensor based on porous hexagonal boron nitride whiskers decorated with Pt nanoparticles." RSC Advances 6, no. 95 (2016): 92748–53. http://dx.doi.org/10.1039/c6ra19419b.

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29

Chen, Xinggang, Yafeng Wang, Zhen Chen, Lifang Zhang, Xiaoming Sang, and Yanqing Cai. "In situ preparation and properties of phthalonitrile resin/hexagonal boron nitride composites." High Performance Polymers 32, no. 9 (May 13, 2020): 1010–18. http://dx.doi.org/10.1177/0954008320922593.

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Phthalonitrile resin/exfoliated hexagonal boron nitride ( h-BN) composites with high thermal conductivity were fabricated using a novel approach. The route included two steps, micro- h-BN was coated and dispersed by phthalonitrile monomers via the function of heterogeneous nucleation, and then micro- h-BN was exfoliated by heat release during the phthalonitrile curing process. The composites achieved a high thermal conductivity of 0.736W (m·K)−1 containing 20 wt% micro- h-BN, which is 3.17 times higher than that of pure phthalonitrile resin at 0.232W (m·K)−1. Compared to traditional routes, the novel preparation approach requires less BN fillers when improving the same thermal conductivity. Importantly, other thermosetting polymers can also encapsulate BN through this strategy, which paves a new way for preparing thermally conductive thermosetting polymer–matrix composites.

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30

Chng, Soon Siang, Minmin Zhu, Jing Wu, Xizu Wang, Zhi Kai Ng, Keke Zhang, Chongyang Liu, Maziar Shakerzadeh, Siuhon Tsang, and Edwin Hang Tong Teo. "Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors." Journal of Materials Chemistry C 8, no. 13 (2020): 4421–31. http://dx.doi.org/10.1039/c9tc06733g.

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31

Sompalle, Balaji, Jérôme Borme, Fátima Cerqueira, Tangyou Sun, Rui Campos, and Pedro Alpuim. "Chemical Vapour Deposition of Hexagonal Boron Nitride for Two Dimensional Electronics." U.Porto Journal of Engineering 3, no. 3 (March 27, 2018): 27–34. http://dx.doi.org/10.24840/2183-6493_003.003_0003.

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Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.

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He, Zhi, and Ruhong Zhou. "Planar graphene/h-BN/graphene heterostructures for protein stretching and confinement." Nanoscale 12, no. 25 (2020): 13822–28. http://dx.doi.org/10.1039/d0nr02271c.

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Senyk, Szymon, Maciej Perehubka, and Tadeusz Kałdoński. "Research on lubricity of oils containing the hexagonal boron nitride." Bulletin of the Military University of Technology 68, no. 1 (March 29, 2019): 131–51. http://dx.doi.org/10.5604/01.3001.0013.1476.

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The paper presents the test results of lubricity properties of Hydrol L-HL 32 hydraulic oil, Mobilube 1 SHC 75w-90 gear oil, and two base oils: SN-150 and SN-650, containing hexagonal boron nitride. To conduct the required tests, a four ball machine was used. This device is commonly used when assessing lubricity properties of oils and greases. The following normative lubricity parameters were defined: the value of welding point Pz [daN], the value of last non-seizing load Pn [daN], the value of seizing at smoothy growing load Pt [daN], as well as the wear limiting capacity load Goz [daN/mm2]. Furthermore, several non-normative tests were completed that covered indication of two parameters making it possible to complete an assessment of lubricity properties of oils. Based on the tests, it was determined that hexagonal boron nitride is a good additive that improves lubricity properties. Improvement in the above properties was recorded both in the case of hydraulic oil and gear oil, as well as oil bases. Relatively better improvement results were obtained in the case of oil bases, where the improvement in the results after using boron nitride, was more visible than in the case of hydraulic and gear oil. The best improvement results for hydraulic oil were obtained after adding 4% h-BN, whereas in the case of the SN-150 oil base, this value was 2% h-BN. The best improvement results for gear oil and SN-650 oil base were also obtained after adding 4% h-BN. The possibility of using the values of h-BN bigger than 4% was excluded. It was determined that bigger content of h-BN in oil generates negative effects (under four ball conditions). Keywords: tribology, lubricity, boron nitride.

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34

Cazorla, Claudio, and Tim Gould. "Polymorphism of bulk boron nitride." Science Advances 5, no. 1 (January 2019): eaau5832. http://dx.doi.org/10.1126/sciadv.aau5832.

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Boron nitride (BN) is a material with outstanding technological promise due to its exceptional thermochemical stability, structural, electronic, and thermal conductivity properties, and extreme hardness. Yet, the relative thermodynamic stability of its most common polymorphs (diamond-like cubic and graphite-like hexagonal) has not been resolved satisfactorily because of the crucial role played by kinetic factors in the formation of BN phases at high temperatures and pressures (experiments) and by competing bonding and electrostatic and many-body dispersion forces in BN cohesion (theory). This lack of understanding hampers the development of potential technological applications and challenges the boundaries of fundamental science. Here, we use high-level first-principles theories that correctly reproduce all important electronic interactions (the adiabatic-connection fluctuation-dissipation theorem in the random phase approximation) to estimate with unprecedented accuracy the energy differences between BN polymorphs and thus overcome the accuracy hurdle that hindered previous theoretical studies. We show that the ground-state phase of BN is cubic and that the frequently observed hexagonal polymorph becomes entropically stabilized over the cubic at temperatures slightly above ambient conditions (Tc→h = 335 ± 30 K). We also reveal a low-symmetry monoclinic phase that is extremely competitive with the other low-energy polymorphs and that could explain the origins of the experimentally observed “compressed h-BN” phase. Our theoretical findings therefore should stimulate new experimental efforts in bulk BN and promote the use of high-level theories in modeling of technologically relevant van der Waals materials.

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35

Chettri, B., P. K. Patra, Sunita Srivastava, Lalhriatzuala, Lalthakimi Zadeng, and D. P. Rai. "Electronic Properties of Hydrogenated Hexagonal Boron Nitride (h-BN): DFT Study." Senhri Journal of Multidisciplinary Studies 4, no. 2 (December 28, 2019): 72–79. http://dx.doi.org/10.36110/sjms.2019.04.02.008.

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In this work, we have constructed the hydrogenated hexagonal boron nitride (h-BN) by placing hydrogen atom at different surface sites. The possibility of hydrogen adsorption on the BN surface has been estimated by calculating the adsorption energy. The electronic properties were calculated for different hydrogenated BNs. The theoretical calculation was based on the Density Functional Theory (DFT). The electron-exchange energy was treated within the most conventional functional called generalized gradient approximation. The calculated band gap of pure BN is 3.80 eV. The adsorption of two H-atoms at two symmetrical sites of B and N sites reduces the band gap value to 3.5 eV. However, in all other combination the systems show dispersed band at the Fermi level exhibiting conducting behavior. Moreover, from the analysis of band structure and Density Of States we can conclude that, the hydrogenation tunes the band gap of hexagonal boron nitride.

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36

Iqbal, Muhammad Waqas, Muhammad Zahir Iqbal, Xiaozhan Jin, Jonghwa Eom, and Chanyong Hwang. "Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride." J. Mater. Chem. C 2, no. 37 (2014): 7776–84. http://dx.doi.org/10.1039/c4tc01176g.

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37

Cigarini, Luigi, Michal Novotný, and František Karlický. "Lattice dynamics in the conformational environment of multilayered hexagonal boron nitride (h-BN) results in peculiar infrared optical responses." Physical Chemistry Chemical Physics 23, no. 12 (2021): 7247–60. http://dx.doi.org/10.1039/d0cp06188c.

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38

Balázsi, Katalin, Mónika Furko, Zsolt Fogarassy, and Csaba Balázsi. "Examination of milled h-BN addition on sintered Si3N4/h-BN ceramic composites." Processing and Application of Ceramics 12, no. 4 (2018): 357–65. http://dx.doi.org/10.2298/pac1804357b.

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Silicon nitride (Si3N4) ceramics containing 1 and 5 wt.% of hexagonal boron nitride (h-BN) were prepared by attrition milling and hot-isostatic pressing. Thorough morphological characterizations have been carried out to reveal the influence of the milling parameters on the size of the h-BN additives. The results confirmed significant decrease in h-BN particle size by increasing milling time. The transmission electron microscopy observations revealed that the h-BN particles were incorporated into the ceramic matrix. The results showed that the increase of the h-BN content decreased significantly the hardness of materials. Moreover, the hardness values were higher when the size of h-BN was larger. The same tendency was observed in the case of Young?s modulus.

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39

Yuan, S., B. Toury, C. Journet, and A. Brioude. "Synthesis of hexagonal boron nitride graphene-like few layers." Nanoscale 6, no. 14 (2014): 7838–41. http://dx.doi.org/10.1039/c4nr01017e.

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T. T. Le, P., M. Davoudiniya, and M. Yarmohammadi. "Interplay of orbital hopping and perpendicular magnetic field in anisotropic phase transitions for Bernal bilayer graphene and hexagonal boron-nitride." Physical Chemistry Chemical Physics 21, no. 1 (2019): 238–45. http://dx.doi.org/10.1039/c8cp05810e.

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Li, Ru, Chuan Shan Li, Jie Tang, Jian Xin Tang, Xiao Yong Du, Ming Xia Zhang, Chong Hai Wang, and Chang Ling Zhou. "Microstructure and Chemical Composition of Boron Nitride Fibers." Key Engineering Materials 591 (November 2013): 16–19. http://dx.doi.org/10.4028/www.scientific.net/kem.591.16.

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Boron nitride(BN) fibres were synthesized by modified technique of Economy’s method. The products were characterized by X-ray diffraction (XRD), fourier transform infrared (FT-IR) absorption spectroscopy, field-emission scanning electron microscopy (FE-SEM), X-ray energy dispersive spectrum (EDS) and X-ray photoelectron spectroscopy (XPS). The results showed that BN fibers were mainly hexagonal boron nitride (h-BN) with diameters of 5-8 μm and the major compositions of BN fibers are B and N with a very small amount of O and C. At last, the chemical composition of samples were determined by the chemical analysis test method like GB/T 16555-2008 and GJB 507-1998.

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Lin, Jinjun, Roland Yingjie Tay, Hongling Li, Lin Jing, Siu Hon Tsang, Hong Wang, Minmin Zhu, Dougal G. McCulloch, and Edwin Hang Tong Teo. "Smoothening of wrinkles in CVD-grown hexagonal boron nitride films." Nanoscale 10, no. 34 (2018): 16243–51. http://dx.doi.org/10.1039/c8nr03984d.

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43

NAYAK, AVINASH P., ANDREI DOLOCAN, JONGHO LEE, HSIAO-YU CHANG, TWINKLE PANDHI, MILO HOLT, LI TAO, and DEJI AKINWANDE. "INVERSION OF THE ELECTRICAL AND OPTICAL PROPERTIES OF PARTIALLY OXIDIZED HEXAGONAL BORON NITRIDE." Nano 09, no. 01 (January 2014): 1450002. http://dx.doi.org/10.1142/s1793292014500027.

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By acoustically irradiating pristine, white, electrically insulating h- BN in aqueous environment we were able to invert its material properties. The resulting dark, electrically conductive h- BN (referred to as partially oxidized h- BN or PO- hBN ) shows a significant decrease in optical transmission (>60%) and bandgap (from 5.46 eV to 3.97 eV). Besides employing a wide variety of analytical techniques (optical and electrical measurements, Raman spectroscopy, SEM imaging, EDS, X-Ray diffraction, XPS and TOF-SIMS) to study the material properties of pristine and irradiated h- BN , our investigation suggests the basic mechanism leading to the dramatic changes following the acoustic treatment. We find that the degree of inversion arises from the degree of h- BN surface or edge oxidation which heavily depends on the acoustic energy density provided to the pristine h- BN platelets during the solution-based process. This provides a facile avenue for the realization of materials with tuned physical and chemical properties that depart from the intrinsic behavior of pristine h- BN .

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Yuan, W., T. E. Wickramasinghe, and W. M. Jadwisienczak. "Design of Novel Deep Ultra-Violet ac-Driven Electroluminescence Devices Based on Boron Nitride nano-Materials." MRS Advances 5, no. 8-9 (2020): 421–30. http://dx.doi.org/10.1557/adv.2020.134.

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AbstractThe hexagonal boron nitride (h-BN) as a wide bandgap semiconductor is an attractive material for deep ultraviolet (DUV) generation. In this paper we study the prospect of using the stacking hexagonal boron nitride nanosheets (h-BNNS) for generating DUV emission by impact excitation in alternating current driven thin electroluminescence devices (ACTEL) based on BN phosphors having different morphologies. A theoretical approach considered is based on the impact excitation model for generating DUV from stacking h-BNNS under a high electric field. It was found that in the h-BNNS with a thickness of 90 nm biased at 3.33×109 V/m, the quantum yield can reach to 86.8%, and the power conversion efficiency of 1.68%. To achieve the same quantum yield and power conversion efficiency for the ACTEL based on h-BN single crystal, the active phosphor layer should be 2 μm thick when biased at 1.5×108 V/m.

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Zhai, Feng Rui, Min Lu, Ke Shan, Zhong Zhou Yi, and Zhi Peng Xie. "Spark Plasma Sintering and Characterization of Mixed h-BN Powders with Different Grain Sizes." Solid State Phenomena 281 (August 2018): 414–19. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.414.

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Mixtures of two grades of hexagonal boron nitride (h-BN) powder differing in their grain size and crystallinity were spark plasma sintering in a vacuum. The influences of the mixing ratio of h-BN powders on the densification, microstructure and mechanical properties were investigated in detail. The results show that the smaller grain size, the lower crystallization degree and the higher density and mechanical properties. While the orientation degree of flake h-BN grains can be greatly enhanced by using h-BN powder with larger particle size. As the increasing of nanometer h-BN powder adding amount, the relative density has the same “V” shape changing trends with mechanical properties. In addition, the orientation of boron nitride grains varied widely, and a nearly isotropic material was prepared from a mixture containing 90wt.% nanometer powder.

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Gao, Wei, Yan Zhao, and Hong Yin. "Lateral size selection of liquid exfoliated hexagonal boron nitride nanosheets." RSC Advances 8, no. 11 (2018): 5976–83. http://dx.doi.org/10.1039/c7ra12872j.

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Simos, N., Z. Kotsina, D. Sprouster, Z. Zhong, H. Zhong, and P. Hurh. "Hexagonal boron nitride (h-BN) irradiated with 140 MeV protons." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 479 (September 2020): 110–19. http://dx.doi.org/10.1016/j.nimb.2020.06.018.

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48

Brljak, Nermina, Ruitao Jin, Tiffany R. Walsh, and Marc R. Knecht. "Selective manipulation of peptide orientation on hexagonal boron nitride nanosheets." Nanoscale 13, no. 11 (2021): 5670–78. http://dx.doi.org/10.1039/d1nr00609f.

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Wang, Jingang, Fengcai Ma, and Mengtao Sun. "Graphene, hexagonal boron nitride, and their heterostructures: properties and applications." RSC Advances 7, no. 27 (2017): 16801–22. http://dx.doi.org/10.1039/c7ra00260b.

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In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on.

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Guo, Chao, Li Min Dong, Shi Jun Gong, Chun Yu Miao, and Xian You Zhang. "Synthesis and Characterization of Hexagonal Boron Nitride Nanosheets." Applied Mechanics and Materials 274 (January 2013): 411–14. http://dx.doi.org/10.4028/www.scientific.net/amm.274.411.

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In this article, hexagonal boron nitride nanosheets have been successfully synthesized by the method of solid-phase sintering using boron oxide (B2O3) and sodium azides (NaN3) as the reactants and magnesium powder as catalyst at 450 °C. Results from XRD suggest that the synthesized products be indexed as pure h-BN. The surface morphology of the products was observed by the scanning electron microscope, that the products are constituted of a large number of the structure of nanosheets. And the SEM images show the sheetlike materials with a diameter of about 500-900 nm, and the thickness is about 100 nm. The far-infrared absorption spectrum showed that the typical sp2 hybrid structure of hexagonal boron nitride. The optical properties of the product are observed in the PL spectra, which shows that the prepared BN emits strong visible luminescence at 445 nm (λex = 325 nm).

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