Relevant bibliographies by topics / High-dose ion implantation

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Academic literature on the topic 'High-dose ion implantation'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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Journal articles on the topic "High-dose ion implantation"

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Treglio, J. R. "High dose metal ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 40-41 (April 1989): 567–70. http://dx.doi.org/10.1016/0168-583x(89)91047-1.

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Lavrentiev, V. I., and A. D. Pogrebnjak. "High-dose ion implantation into metals." Surface and Coatings Technology 99, no. 1-2 (1998): 24–32. http://dx.doi.org/10.1016/s0257-8972(97)00122-9.

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Kucheyev, S. O., J. S. Williams, J. Zou, C. Jagadish, and G. Li. "High-dose ion implantation into GaN." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (April 2001): 214–18. http://dx.doi.org/10.1016/s0168-583x(00)00672-8.

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Qin, S., J. D. Bernstein, C. Chan, J. Shao, and S. Denholm. "High dose rate hydrogen plasma ion implantation." Surface and Coatings Technology 85, no. 1-2 (1996): 56–59. http://dx.doi.org/10.1016/0257-8972(96)02887-3.

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Brown, I. G., J. E. Galvin, and K. M. Yu. "High dose uranium ion implantation into silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 31, no. 4 (1988): 558–62. http://dx.doi.org/10.1016/0168-583x(88)90455-7.

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Karge, H., and R. Mühle. "High dose ion implantation effects in glasses." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65, no. 1-4 (1992): 380–83. http://dx.doi.org/10.1016/0168-583x(92)95070-8.

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Kim, M. J., Q. Zhang, K. Das Chowdhury, R. W. Carpenter, and J. C. Kelly. "Microanalysis of high-dose oxygen-implanted germanium." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 866–67. http://dx.doi.org/10.1017/s0424820100088646.

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High-dose ion implantation is being increasingly used to produce buried oxide layers in silicon for high speed CMOS and VLSI applications. Ion implantation into germanium has been used to control optical properties. Germanium implanted with high dose oxygen is a promising material for photodetectors and solar energy converters. In the present study the structural changes in germanium caused by high dose oxygen implantation, giving low reflectivity in the far-UV and visible, were characterized by HREM and high spatial resolution AEM.The single crystal n-type germanium {111} wafers were implante
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Aleksandrov, P. A., O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, and A. L. Vasiliev. "Insights into high-dose helium implantation of silicon." Kristallografiâ 69, no. 3 (2024): 494–504. http://dx.doi.org/10.31857/s0023476124030155.

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The paper reports an analysis of surface morphology variation and cavity band formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 1017 He+/cm2 without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 1017 He+/cm2
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Miao, Bin, Junbo Niu, Jiaxu Guo, et al. "Effect of Dose Rate on Tribological Properties of 8Cr4Mo4V Subjected to Plasma Immersion Ion Implantation." Processes 12, no. 1 (2024): 190. http://dx.doi.org/10.3390/pr12010190.

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The lack of service lifetime of bearings has become a bottleneck that restricts the performance of aero engines. How to solve or improve this problem is the focus of most surface engineering researchers at present. In this study, plasma immersion ion implantation was conducted; in order to enhance the ion implantation efficiency and improve the wear resistance of 8Cr4Mo4V bearing steel, the dose-rate-enhanced method was adopted during ion implantation. The surface roughness, phase constituents, elemental concentration, hardness, contact angle and wear resistance of samples after ion implantati
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Falkenstein, Zoran, Kevin C. Walter, Michael A. Nastasi, Donald J. Rej, and Nikolai V. Gavrilov. "Surface modification of aluminum and chromium by ion implantation of nitrogen with a high current density ion implanter and plasma-source ion implantation." Journal of Materials Research 14, no. 11 (1999): 4351–57. http://dx.doi.org/10.1557/jmr.1999.0589.

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Results of ion implantation of nitrogen into electrodeposited hard chromium and pure aluminum by a high-dose ion-beam source are presented and compared to plasma-source ion implantation. The large-area, high current density ion-beam source can be characterized, with respect to surface modification use, by a uniform emitted dose rate in the range of 1016 to 5 × 1017 N cm−2 min−1 over an area of <100 cm2 and with acceleration energies of 10–50 keV. The implantation range and retained dose (measured using ion-beam analysis), the surface hardness, coefficient of friction, and the change in the
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Dissertations / Theses on the topic "High-dose ion implantation"

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Emelianova, Olga. "Modeling gas-driven microstructural evolution in ODS-EUROFER steel by high dose helium and hydrogen ion implantation." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP056.

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Les aciers ferritiques-martensitiques renforcés par dispersion d'oxydes (ODS) sont des matériaux de structure de haute performance pour les futures installations nucléaires de fission et de fusion. Un problème important pour la performance de ces aciers sous irradiation est leur résistance aux effets néfastes des gaz de transmutation, l'hélium et l'hydrogène, avec une attention particulière aux effets liés à la forte densité de nanoparticules d'oxyde. L'objectif de la thèse est une étude systématique et fondamentale de l’évolution de la microstructure induite par les gaz légers dans les aciers
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Fauré, Joël. "Etude de surfaces monocristallines de silicium par reflexion d'electrons : degradation par implantation d'ions argon, reorganisation par recuit." Toulouse 3, 1987. http://www.theses.fr/1987TOU30108.

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Etude de la degradation de la surface plane si(111) par implantation d'ions ar**(+) a temperature ambiante. Lorsque la dose d'ions implantes augmente, l'intensite des taches du diagramme de diffraction diminue progressivement et les marches atomiques, observees en microscopie electronique par reflexion, disparaissent. Lorsque l'energie incidente des ions ar**(+) augmente, la vitesse de degradation de la surface diminue. Apres disparition complete des marches atomiques, un recuit thermique "in situ" de quelques minutes a 575**(o)c permet de retrouver la topographie de la surface initiale. Le re
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Hardie, Christopher David. "Micro-mechanics of irradiated Fe-Cr alloys for fusion reactors." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:a3ac36ba-ca6f-4129-8f37-f1278ef8a559.

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In the absence of a fusion neutron source, research on the structural integrity of materials in the fusion environment relies on current fission data and simulation methods. Through investigation of the Fe-Cr system, this detailed study explores the challenges and limitations in the use of currently available radiation sources for fusion materials research. An investigation of ion-irradiated Fe12%Cr using nanoindentation with a cube corner, Berkovich and spherical tip, and micro-cantilever testing with two different geometries, highlighted that the measurement of irradiation hardening was larg
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Бондар, Олександр В`ячеславович, Александр Вячеславович Бондарь та Oleksandr Viacheslavovych Bondar. "Структура та фізико-механічні властивості багатокомпонентних та багатошарових наноструктурних покриттів". Thesis, Сумський державний університет, 2021. https://essuir.sumdu.edu.ua/handle/123456789/83601.

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Дисертація присвячена встановленню загальних закономірностей і механізмів формування багатоелементних (NbN, NbSiN, NbAlN, (TiZrAlYNb)N, (TiZrHfVNb)N і (TiZrHfVNbTa)N) і багатошарових ([TiN/MoN]n/П, [TiN/ZrN]n/П, [MoN/CrN]n/П і [TiN/SiC]n/П) наноструктурних покриттів, визначенню впливу енергетичних і термодинамічних параметрів осадження покриттів на їх структурно-фазовий стан і фізико-механічні властивості. Отримані результати комплексних досліджень доповнюють і розширюють сучасні уявлення про фізичні основи формування структури, мікроструктури, фізико-механічних та трибологічних властивостей б
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Ellingboe, Susan Leigh. "High-energy, high-dose O implantation in Si." Phd thesis, 1995. http://hdl.handle.net/1885/144111.

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Rao, Ziqiang. "High dose ion implantation into nickel : microstructural changes, phase formation and thermal oxidation." Phd thesis, 1993. http://hdl.handle.net/1885/138558.

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"Formation and characterization of high dose ion implanted thin layers of metal clusters embedded in silica glass." 2001. http://library.cuhk.edu.hk/record=b5890698.

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by Chung Pui Shan.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2001.<br>Includes bibliographical references (leaves 105-110).<br>Abstracts in English and Chinese.<br>Abstract --- p.i<br>Acknowledgements --- p.iii<br>Table of contents --- p.v<br>Chapter Chapter 1. --- Introduction --- p.1<br>Chapter 1.1 --- Metal clusters embedded in fused silica glass --- p.2<br>Chapter 1.2 --- Ion implantation of metal clusters --- p.3<br>Chapter 1.3 --- Feature of MEVVA implantation --- p.5<br>Chapter 1.4 --- Motivation and organization of this thesis --- p.7<br>Chapter Chapter 2. --- Sampl
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Books on the topic "High-dose ion implantation"

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Symposium C on High Energy Ion Implantation (1991 Strasbourg, France). High energy and high dose ion implantation: Proceedings of Symposium C on High Energy Ion Implantation and Symposium D on Ion Beam Synthesis of Compound and Elemental Layers of the 1991 E-MRS Spring Conference, Strasbourg, France, May 28-31, 1991. North-Holland, 1992.

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2

Campisano, S. U., J. Gyulai, P. L. F. Hemment, and J. A. Kilner. High Energy and High Dose Ion Implantation. Elsevier Science & Technology Books, 1992.

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Campisano, S. U., J. Gyulai, and P. L. F. Hemment. High Energy and High Dose Ion Implantation: Proceedings (European Materials Research Society Symposia Proceedings). North-Holland, 1992.

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Book chapters on the topic "High-dose ion implantation"

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Kups, Thomas, Petia Weih, M. Voelskow, Wolfgang Skorupa, and Jörg Pezoldt. "High Dose High Temperature Ion Implantation of Ge into 4H-SiC." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.851.

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Opsal, Jon. "Modulated Interference Effects and Thermal Wave Monitoring of High-Dose Ion Implantation in Semiconductors." In Review of Progress in Quantitative Nondestructive Evaluation. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0817-1_155.

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Dashevsky, Zinovi, and Izhak Chaikovsky. "Jahn-Teller Levels of Defects in A IV B VI Semiconductors Doped by High Dose Ion Implantation." In Vibronic Interactions: Jahn-Teller Effect in Crystals and Molecules. Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0985-0_20.

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Jäger, H. U. "Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon." In Simulation of Semiconductor Devices and Processes. Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_33.

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Pászti, F. "Macroscopic Phenomena Induced by High Dose MeV Energy Implantation of He, Ne and Ar Ions." In Fundamental Aspects of Inert Gases in Solids. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3680-6_15.

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McCarron, David, Marvin Farley, and Walter Parmantie. "Pressure compensated dose control in high current ion implantation systems." In Ion Implantation Technology–92. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89994-1.50052-1.

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Venables, D., and K. S. Jones. "Defect formation in high dose oxygen implanted silicon." In Ion Implantation Technology–92. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89994-1.50016-8.

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Panknin, D., E. Wieser, W. Skorupa, H. Vöhse, and J. Albrecht. "Formation of buried iron–cobalt–silicide layers by high dose implantation." In Ion Implantation Technology–92. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89994-1.50047-8.

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Lin, Chenglu, P. L. F. Hemment, A. Nejim, J. P. Zhang, Jinhua Li, and Shichang Zou. "Insulator structures obtained by high dose nitrogen implantation into aluminium on silicon." In Ion Implantation Technology–92. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89994-1.50045-4.

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McOmber, J. I., K. Ostrowski, M. Meloni, R. Eddy, and P. Buccos. "Resist preparation and removal techniques for high dose implantation on 200 mm wafers." In Ion Implantation Technology–92. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89994-1.50059-4.

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Conference papers on the topic "High-dose ion implantation"

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Chang, F. C., M. Levy, and S. S. Lin. "The Effect of Ion Implantation on the Corrosion Behavior of a High Density Sintered Tungsten Alloy." In CORROSION 1985. NACE International, 1985. https://doi.org/10.5006/c1985-85071.

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Abstract The effect of Cr, Ni, Ta, and Ti ion implantation at a dose rate of 2 x 1017 ions cm-2 on the electrochemical corrosion behavior of a high density sintered tungsten alloy has been investigated in Cl free and Cl containing aqueous solution buffered to pH 4, 9, and 12. A three sweep potentiodynamic polarization technique was employed to compare the polarization behavior of unimplanted and implanted surfaces. The surfaces of the ion implanted tungsten alloy was characterized by Auger Electron Spectroscopic Analysis.
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Halim, Jeffri, Akira Mineji, Vladimir Faifer, et al. "High-Resolution Mapping of Low-Dose Implants." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033585.

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Jeon, Y., I. Koo, J. Oh, et al. "Key Technologies for Ultra High Dose CMOS Applications." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033574.

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Gori, Brian, Shengwu Chang, Bill Leavitt, et al. "Medium Energy High Dose Ion Implanter." In 2016 21st International Conference on Ion Implantation Technology (IIT). IEEE, 2016. http://dx.doi.org/10.1109/iit.2016.7882892.

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Miller, T., L. Godet, G. D. Papasouliotis, et al. "Plasma Doping—Enabling Technology for High Dose Logic and Memory Applications." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033661.

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Eddy, Ron, Brett Ostrowski, Ming Hong Yang, and Darryl Huntington. "Ion Implanter Cross Contamination And Maintenance Safety Considerations With High Dose Phosphorus." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401531.

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Satoh, Shu, Jongyoon Yoon, Jonathan David, et al. "Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter." In ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548427.

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Eisner, Edward, Jonathan David, Perry Justesen, et al. "Optima MDxt: A high throughput 335 keV mid-dose implanter." In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIP, 2012. http://dx.doi.org/10.1063/1.4766558.

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Ishibashi, Kazuhisa, Shiro Ninomiya, Toshio Yumiyama, et al. "Intentional Two-Dimensional Non-Uniform Dose Implant with High Dynamic Dose Range." In 2016 21st International Conference on Ion Implantation Technology (IIT). IEEE, 2016. http://dx.doi.org/10.1109/iit.2016.7882883.

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Eddy, Ronald, Chuck Hudak, Pamla Bettincurt, and Sandra Delgado. "High Dose Hydrogen Implant Blistering Effects As a Function of Selected Implanter And Substrate Conditions." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401520.

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Reports on the topic "High-dose ion implantation"

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Brown, I. G., J. E. Galvin, and K. M. Yu. High dose uranium ion implantation into silicon. Office of Scientific and Technical Information (OSTI), 1987. http://dx.doi.org/10.2172/6159599.

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White, C. W., J. D. Budai, J. G. Zhu, et al. Nanocrystals and quantum dots formed by high-dose ion implantation. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/219351.

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Gea, L. A., L. A. Boatner, J. D. Budai, and J. Rankin. The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/102253.

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