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Journal articles on the topic 'High-dose ion implantation'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Treglio, J. R. "High dose metal ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 40-41 (April 1989): 567–70. http://dx.doi.org/10.1016/0168-583x(89)91047-1.

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2

Lavrentiev, V. I., and A. D. Pogrebnjak. "High-dose ion implantation into metals." Surface and Coatings Technology 99, no. 1-2 (1998): 24–32. http://dx.doi.org/10.1016/s0257-8972(97)00122-9.

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3

Kucheyev, S. O., J. S. Williams, J. Zou, C. Jagadish, and G. Li. "High-dose ion implantation into GaN." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (April 2001): 214–18. http://dx.doi.org/10.1016/s0168-583x(00)00672-8.

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4

Qin, S., J. D. Bernstein, C. Chan, J. Shao, and S. Denholm. "High dose rate hydrogen plasma ion implantation." Surface and Coatings Technology 85, no. 1-2 (1996): 56–59. http://dx.doi.org/10.1016/0257-8972(96)02887-3.

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5

Brown, I. G., J. E. Galvin, and K. M. Yu. "High dose uranium ion implantation into silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 31, no. 4 (1988): 558–62. http://dx.doi.org/10.1016/0168-583x(88)90455-7.

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6

Karge, H., and R. Mühle. "High dose ion implantation effects in glasses." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65, no. 1-4 (1992): 380–83. http://dx.doi.org/10.1016/0168-583x(92)95070-8.

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7

Kim, M. J., Q. Zhang, K. Das Chowdhury, R. W. Carpenter, and J. C. Kelly. "Microanalysis of high-dose oxygen-implanted germanium." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 866–67. http://dx.doi.org/10.1017/s0424820100088646.

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High-dose ion implantation is being increasingly used to produce buried oxide layers in silicon for high speed CMOS and VLSI applications. Ion implantation into germanium has been used to control optical properties. Germanium implanted with high dose oxygen is a promising material for photodetectors and solar energy converters. In the present study the structural changes in germanium caused by high dose oxygen implantation, giving low reflectivity in the far-UV and visible, were characterized by HREM and high spatial resolution AEM.The single crystal n-type germanium {111} wafers were implante

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8

Aleksandrov, P. A., O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, and A. L. Vasiliev. "Insights into high-dose helium implantation of silicon." Kristallografiâ 69, no. 3 (2024): 494–504. http://dx.doi.org/10.31857/s0023476124030155.

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The paper reports an analysis of surface morphology variation and cavity band formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 1017 He+/cm2 without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 1017 He+/cm2

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9

Miao, Bin, Junbo Niu, Jiaxu Guo, et al. "Effect of Dose Rate on Tribological Properties of 8Cr4Mo4V Subjected to Plasma Immersion Ion Implantation." Processes 12, no. 1 (2024): 190. http://dx.doi.org/10.3390/pr12010190.

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The lack of service lifetime of bearings has become a bottleneck that restricts the performance of aero engines. How to solve or improve this problem is the focus of most surface engineering researchers at present. In this study, plasma immersion ion implantation was conducted; in order to enhance the ion implantation efficiency and improve the wear resistance of 8Cr4Mo4V bearing steel, the dose-rate-enhanced method was adopted during ion implantation. The surface roughness, phase constituents, elemental concentration, hardness, contact angle and wear resistance of samples after ion implantati

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10

Falkenstein, Zoran, Kevin C. Walter, Michael A. Nastasi, Donald J. Rej, and Nikolai V. Gavrilov. "Surface modification of aluminum and chromium by ion implantation of nitrogen with a high current density ion implanter and plasma-source ion implantation." Journal of Materials Research 14, no. 11 (1999): 4351–57. http://dx.doi.org/10.1557/jmr.1999.0589.

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Results of ion implantation of nitrogen into electrodeposited hard chromium and pure aluminum by a high-dose ion-beam source are presented and compared to plasma-source ion implantation. The large-area, high current density ion-beam source can be characterized, with respect to surface modification use, by a uniform emitted dose rate in the range of 1016 to 5 × 1017 N cm−2 min−1 over an area of <100 cm2 and with acceleration energies of 10–50 keV. The implantation range and retained dose (measured using ion-beam analysis), the surface hardness, coefficient of friction, and the change in the

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11

Ishimaru, Manabu, Robert M. Dickerson, and Kurt E. Sickafus. "High-dose oxygen ion implantation into 6H-SiC." Applied Physics Letters 75, no. 3 (1999): 352–54. http://dx.doi.org/10.1063/1.124372.

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12

Wesch, W., A. Heft, H. Hobert, G. Peiter, E. Wendler, and T. Bachmann. "High dose MeV oxygen ion implantation into SiC." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 141, no. 1-4 (1998): 160–63. http://dx.doi.org/10.1016/s0168-583x(98)00184-0.

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13

Srikanth, K., M. Chu, S. Ashok, N. Nguyen, and K. Vedam. "High-dose carbon ion implantation studies in silicon." Thin Solid Films 163 (September 1988): 323–29. http://dx.doi.org/10.1016/0040-6090(88)90443-9.

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14

Khassanov, I., M. Klauda, Ch Buchal та ін. "High-dose ion implantation in YBa2Cu3O7−δ-films". Physica B: Condensed Matter 183, № 1-2 (1993): 87–95. http://dx.doi.org/10.1016/0921-4526(93)90058-e.

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15

Uhm, Han S., and W. M. Lee. "High‐dose neutron generation from plasma ion implantation." Journal of Applied Physics 69, no. 12 (1991): 8056–63. http://dx.doi.org/10.1063/1.347453.

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16

Scholten, D., and A. J. Burggraaf. "High dose ion implantation in yttria-stabilized zirconia." Radiation Effects 97, no. 3-4 (1986): 191–97. http://dx.doi.org/10.1080/00337578608226007.

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17

Taylor, Michael, Kurt Hurley, King Lee, Mark LeMere, Jon Opsal, and Tim O'Brien. "Thermal-wave measurements of high-dose ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55, no. 1-4 (1991): 725–29. http://dx.doi.org/10.1016/0168-583x(91)96266-n.

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18

Celler, G. K., and Alice E. White. "Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon." MRS Bulletin 17, no. 6 (1992): 40–46. http://dx.doi.org/10.1557/s0883769400041452.

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Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications o

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19

Kups, Thomas, Petia Weih, M. Voelskow, Wolfgang Skorupa, and Jörg Pezoldt. "High Dose High Temperature Ion Implantation of Ge into 4H-SiC." Materials Science Forum 527-529 (October 2006): 851–54. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.851.

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A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

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20

Stepanov, A. L., V. I. Nuzhdin, V. F. Valeev, А. М. Rogov, and D. А. Konovalov. "Ion implantation: nanoporous germanium." Poverhnostʹ. Rentgenovskie, sinhrotronnye i nejtronnye issledovaniâ, no. 7 (November 27, 2024): 83–90. http://dx.doi.org/10.31857/s1028096024070119.

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The formation of thin surface amorphous layers of nanoporous Ge with various morphology during low-energy high-dose implantation by metal ions of different masses 63Cu+, 108Ag+ and 209Bi+ of monocrystalline c-Ge substrates were experimentally demonstrated by high-resolution scanning electron microscopy. Analysis of the crystallographic structure of all nanoporous germanium layers obtained was carried out by reflected backscattering electron diffraction. It was shown that at low irradiation energies, in the case of 63Cu+ and 108Ag+, needle-shaped nanoformations were created on the c-Ge surface,

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21

Pérez-Rodríguez, A., A. Romano-Rodríguez, C. Serre, et al. "High temperature high dose C ion implantation in epitaxial SiGe." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 120, no. 1-4 (1996): 173–76. http://dx.doi.org/10.1016/s0168-583x(96)00503-4.

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22

Goncharov, A. A., I. M. Protsenko, G. Yu Yushkov, O. R. Monteiro, and I. G. Brown. "High-dose ion implantation using a high-current plasma lens." Surface and Coatings Technology 128-129 (June 2000): 15–20. http://dx.doi.org/10.1016/s0257-8972(00)00637-x.

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23

Krause, S. J., C. O. Jung, T. S. Ravi, and S. R. Wilson. "Precipitation processes in materials synthesis by high-dose ion implantation of semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 486–87. http://dx.doi.org/10.1017/s0424820100104492.

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High dose ion implantation for materials synthesis in semiconductors is receiving increasing attention with the commercialization of medium and high current ion implanters. Surface and buried dielectric layers in silicon are being fabricated by high-dose implantation of oxygen, nitrogen, and carbon. Metallic silicides are being synthesized by implantation of metals such as cobalt and nickel. The evolution of a new phase or phases from a supersaturated solid solution during implantation occurs in a zone with increasing concentration which is also in a concentration gradient. Because of this, an

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24

Romanovsky, E. A., O. V. Bespalova, A. M. Borisov, et al. "On carbon nitride synthesis at high-dose ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 139, no. 1-4 (1998): 355–58. http://dx.doi.org/10.1016/s0168-583x(98)00057-3.

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25

Salvi, V. P., A. M. Narsale, S. V. Vidwans, et al. "Formation of vanadium silicide by high dose ion implantation." Surface Science 189-190 (October 1987): 1143–49. http://dx.doi.org/10.1016/s0039-6028(87)80562-9.

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26

Miyagawa, Y., H. Nakadate, F. Djurabekova, and S. Miyagawa. "Dynamic-sasamal: simulation software for high-dose ion implantation." Surface and Coatings Technology 158-159 (September 2002): 87–93. http://dx.doi.org/10.1016/s0257-8972(02)00225-6.

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27

Salvi, V. P., A. M. Narsale, S. V. Vidwans, et al. "Formation of vanadium silicide by high dose ion implantation." Surface Science Letters 189-190 (October 1987): A460—A461. http://dx.doi.org/10.1016/0167-2584(87)90572-x.

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28

Chayahara, Akiyoshi, Masato Kiuchi, Yuji Horino, Kanenaga Fujii, and Mamoru Satou. "High-Dose Implantation of MeV Carbon Ion into Silicon." Japanese Journal of Applied Physics 31, Part 1, No. 1 (1992): 139–40. http://dx.doi.org/10.1143/jjap.31.139.

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29

Salvi, V. P., S. V. Vidwans, A. A. Rangwala, B. M. Arora, Kuldeep, and Animesh K. Jain. "Formation of titanium silicides by high dose ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 28, no. 2 (1987): 242–46. http://dx.doi.org/10.1016/0168-583x(87)90111-x.

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30

Tanabe, Nobuo, and Masaya Iwaki. "Selective growth of B 1-NbN in Nb thin film by high-dose nitrogen molecular ion implantation." Journal of Materials Research 3, no. 6 (1988): 1227–31. http://dx.doi.org/10.1557/jmr.1988.1227.

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Nitrogen molecular ion implantations have been performed in niobium thin films to form B 1-NbN layers with an accelerating voltage of 150 kV up to a dose of 5 × 1017 N2+ ions/cm2 at room temperature. Measurements of superconducting transition temperature (Tc), Auger electron spectroscopy analyses (AES), and x-ray diffraction analyses (XRD) have been carried out as a function of nitrogen dose in order to characterize the implanted layer. It has been found that there are two regions in the dose dependence of Tc; in the low-dose case, Tc decreases from the initial value of 8 K to less than 4.2 K

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31

Guss, B., S. Seraphin, and B. F. Cordts. "TEM Analysis of Defects in Simox Silicon-On-Insulator Material." Microscopy and Microanalysis 3, S2 (1997): 473–74. http://dx.doi.org/10.1017/s1431927600009259.

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Silicon-on-Insulator is the leading technology for VLSI fast speed processors and low voltage applications. SIMOX (Separation by Implantation of Oxygen) is a subset of SOI with a high quality top silicon layer onto which VLSI circuitry is placed. SIMOX processing begins with a high energy, high current implantation of a large dose of O+ ions to penetrate the wafer’s surface to form the buried oxide and top silicon layers. This implantation creates numerous precipitates and a large damage region. Therefore a multi-step anneal is used to improve the quality of the top silicon layer by significan

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32

Barbadillo, L., M. Cervera, M. J. Hernández, et al. "Cathodoluminescence from BN buried layers by high-dose ion implantation." Journal of Applied Physics 91, no. 9 (2002): 6209–11. http://dx.doi.org/10.1063/1.1462840.

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33

Yiwei, Zeng, and Ji Chengzhou. "Study on high dose iron ion implantation in aluminum foil." Surface and Coatings Technology 128-129 (June 2000): 199–204. http://dx.doi.org/10.1016/s0257-8972(00)00619-8.

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34

Bunker, S. N., and A. J. Armini. "Modeling of concentration profiles from very high dose ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, no. 1-4 (1989): 7–10. http://dx.doi.org/10.1016/0168-583x(89)90730-1.

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35

Zhong, Y., C. Bailat, R. S. Averback, S. K. Ghose, and I. K. Robinson. "Damage accumulation in Si during high-dose self-ion implantation." Journal of Applied Physics 96, no. 3 (2004): 1328–35. http://dx.doi.org/10.1063/1.1763242.

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36

McCarron, David, Marvin Parley, and Walter Parmantie. "Pressure compensated dose control in high current ion implantation systems." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74, no. 1-2 (1993): 238–42. http://dx.doi.org/10.1016/0168-583x(93)95051-6.

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37

Bunker, S. N., P. Sioshansi, M. Sanfacon, A. Mogro-Campero, and G. A. Smith. "Analysis of buried layers from high dose oxygen ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 21, no. 1-4 (1987): 148–50. http://dx.doi.org/10.1016/0168-583x(87)90814-7.

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38

Eddy, R., A. Long, S. Smith, and J. Tkach. "Improvements in dose uniformity on high current ion implantation systems." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 21, no. 1-4 (1987): 424–27. http://dx.doi.org/10.1016/0168-583x(87)90870-6.

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39

Ishikawa, Yukari, and Noriyoshi Shibata. "Simultaneous Si molecular beam epitaxy and high-dose ion implantation." Journal of Crystal Growth 150 (May 1995): 980–83. http://dx.doi.org/10.1016/0022-0248(95)80086-r.

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40

Negoro, Yuki, Tsunenobu Kimoto, and Hiroyuki Matsunami. "Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing." Materials Science Forum 483-485 (May 2005): 617–20. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.617.

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The authors have investigated electrical behavior of implanted Al and B atoms near a “tail” region in 4H-SiC (0001) after high-temperature annealing. For aluminum-ion (Al+) implantation, slight in-diffusion of Al implants occurs in the initial stage of annealing at 1700 °C. Nearly all of implanted Al atoms, including the in-diffused Al atoms were activated by annealing at 1700 °C for 1 min. Several electrically deep centers are formed by Al+ implantation. The concentrations of the centers are 3-4 orders-of-magnitude lower than that of implanted Al-atom concentration. For boron-ion (B+) implant

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41

Tan, Yan, Benedict Johnson, Supapan Seraphin, and Maria J. Anc. "Defect Dynamics in Simox Structures as a Function of the Annealing Parameters." Microscopy and Microanalysis 6, S2 (2000): 1086–87. http://dx.doi.org/10.1017/s1431927600037922.

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Advanced semiconductor devices on the SIMOX (Separation by IMplanted OXygen) substrate have many advantages including high-speed, large packing density and low power consumption. SIMOX consists of a layer structure generated by oxygen ion implantation into silicon wafers. The implantation process introduces a high density of defects that can be reduced by post-implantation annealing. Decreasing the oxygen dose not only reduces the cost but also decreases the damage to the top Si layers. Low-dose implantation results in thinner buried oxide (BOX) layer, in contrast to traditional high-dose SIMO

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42

Takata, Kousuke, Jun Fujise, Bonggyun Ko, Toshiaki Ono, and Masaki Tanaka. "Effect of ion implantation on mechanical strength of silicon wafers." Japanese Journal of Applied Physics 61, no. 4 (2022): 045503. http://dx.doi.org/10.35848/1347-4065/ac4f4b.

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Abstract We have investigated the effects of the secondary defects caused by ion implantation on wafer strength. The change in wafer strength with the ion dose has been examined after implanting phosphorus or (BF2)+ ions into wafers with and without heat treatment. Ion implantation defects have been observed using transmission electron microscopy after ion implantation with and without subsequent annealing. The three-point bending tests carried out with the ion implanted samples show that the upper yield stress, which represents wafer strength, gradually decreases with the increasing dose in t

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43

Степанов, А. Л., В. В. Воробьев, В. И. Нуждин, В. Ф. Валеев та Ю. Н. Осин. "Создание пористых слоев германия имплантацией ионами серебра". Письма в журнал технической физики 44, № 8 (2018): 84. http://dx.doi.org/10.21883/pjtf.2018.08.45971.16808.

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AbstractWe propose a method for the formation of porous germanium ( P -Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag^+ ions into single-crystalline germanium ( c -Ge). This is demonstrated by implantation of 30-keV Ag^+ ions into a polished c -Ge plate to a dose of 1.5 × 10^17 ion/cm^2 at an ion beam-current density of 5 μA/cm^2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RH

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44

Wei, R., P. J. Wilbur, W. S. Sampath, D. L. Williamson, and Li Wang. "Effects of Ion Implantation Conditions on the Tribology of Ferrous Surfaces." Journal of Tribology 113, no. 1 (1991): 166–73. http://dx.doi.org/10.1115/1.2920583.

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The effects of implanted nitrogen ion dose and target surface temperature during implantation on the wear characteristics of iron (ferrite) and 304 stainless steel (austenite) have been studied systematically. Wear test results obtained using an oscillating pin-on-disk tester show that high dose rate, high dose implantation into these materials when they are being held at an elevated temperature (near 400°C) induce dramatic improvements in their wear characteristics. Surface and near-surface analysis techniques are used to demonstrate that implanted ion dose and surface temperature can be cont

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45

Ueda, M., H. Reuther, R. Gunzel, A. F. Beloto, E. Abramof, and L. A. Berni. "High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (April 2001): 715–20. http://dx.doi.org/10.1016/s0168-583x(00)00555-3.

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46

Zhou, Hai, Fei Chen, Ying Ge Yang, Han Cheng Wan, and Shuo Cai. "Study on Process of Ion Implantation on AZ31 Magnesium Alloy." Key Engineering Materials 373-374 (March 2008): 342–45. http://dx.doi.org/10.4028/www.scientific.net/kem.373-374.342.

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Ti ion and C ion is implanted into AZ31 magnesium alloy surface by metal vapor vacuum arc (MEVVA) implanter operating with a modified cathode. This metal arc ion source has a broad beam and high current capabilities. Implantation energy is fixed at 45K eV and dose is 9×1017 cm-2 and 3×1017 cm-2 respectively. Through ion implantation, Ti ion implantation layer approximately 1000nm thick is directly formed on the surface of AZ31 magnesium alloy, by which its surface property is greatly improved. Microstructure, the component distribution and phase composition are analyzed using scanning electron

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47

Mazzamuto, Fulvio, Zeinab Chehadi, Fabien Roze, et al. "Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing." Solid State Phenomena 359 (August 22, 2024): 21–28. http://dx.doi.org/10.4028/p-7t0wv7.

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This paper demonstrates for the first time a new annealing scheme to form p-type junctions in SiC by high temperature ion implantation followed by laser annealing without the use of a protective carbon capping layer. This novel approach leverages higher substrate temperatures during implant to minimize implant-induced defects during ion implantation, which enables the use of reduced thermal budget laser annealing for dopant activation. Laser annealing enables higher surface temperatures in the implanted layer than conventional annealing using a high temperature furnace. The shorter thermal bud

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48

Kalinina, Evgenia V., M. V. Zamoryanskaya, E. V. Kolesnikova, and Alexander A. Lebedev. "Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions." Materials Science Forum 615-617 (March 2009): 473–76. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.473.

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Structural features of 4H-SiC structures with CVD epitaxial layers, subjected to high-dose Al ion implantation and short high-temperature pulse annealing, have been studied using secondary-ion mass-spectroscopy, transmission electron spectroscopy, local cathodoluminescence and cathodoluminescence imaging on cross-sectionally cleaved surfaces of the structures. An accelerated diffusion of radiation defects, a “long-range action effect”, with a diffusion coefficient of 10 -9 cm2 s-1 after high-dose Al ion implantation and the gettering effect after subsequent pulsed thermal annealing have been o

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49

Klapperich, C., L. Pruitt, and K. Komvopoulos. "Nanomechanical properties of energetically treated polyethylene surfaces." Journal of Materials Research 17, no. 2 (2002): 423–30. http://dx.doi.org/10.1557/jmr.2002.0059.

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The effects of energetic treatments, crosslinking, and plasma modification on the surface mechanical properties and deformation behavior of ultrahigh molecular weight polyethylene (UHMWPE) were examined in light of nanoindentation experiments performed with a surface force microscope. Samples of UHMWPE were subjected to relatively high-dose gamma irradiation, oxygen ion implantation, and argon ion beam treatment. A range of crosslinking was achieved by varying the radiation dose. In addition, low-temperature plasma treatment with hexamethyldisiloxane/O2 and C3F6 was investigated for comparison

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50

Kim, Bumjoon, Kwangtaek Lee, Samseok Jang, et al. "Epitaxial Lateral Overgrowth of GaN Using High-Dose N+-Ion-Implantation." ECS Transactions 25, no. 33 (2019): 169–74. http://dx.doi.org/10.1149/1.3334805.

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