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Relevant bibliographies by topics / High-electron mobility (HEMT) devices

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Academic literature on the topic 'High-electron mobility (HEMT) devices'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 February 2022

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Journal articles on the topic "High-electron mobility (HEMT) devices"

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Green, F. "Charge Fluctuations in High-Electron-Mobility Transistors: A Review." Australian Journal of Physics 46, no. 3 (1993): 447. http://dx.doi.org/10.1071/ph930477.

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The physics of high-electron-mobility transistors (HEMTs) plays a central role in contemporary design for millimetre-wave communications. HEMTs are the early fruits in a harvest of increasingly radical devices whose structural features are measured in nanometres. The operating principles of these devices are richly varied, and almost always far from classical. One of the tasks for device physics is to understand fluctuation phenomena, .or noise: the control of charge fluctuations is basic to high performance, yet the description of these processes remains incomplete if not obscure. This paper

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Wang, Chih Hao, Liang Yu Su, Finella Lee, and Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices." Applied Mechanics and Materials 764-765 (May 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.

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We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

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Niu, Di, Quan Wang, Wei Li, et al. "The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT." Micromachines 12, no. 2 (2021): 131. http://dx.doi.org/10.3390/mi12020131.

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The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair process will gradually recover the electrical properties. We study different repair methods and different repair conditions, propose the best repair conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gat

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Meneghesso, Gaudenzio, Matteo Meneghini, Augusto Tazzoli, et al. "Reliability issues of Gallium Nitride High Electron Mobility Transistors." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 39–50. http://dx.doi.org/10.1017/s1759078710000097.

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In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The ro

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Chang, P. C., K. H. Lee, Z. H. Wang, and S. J. Chang. "AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer." Journal of Nanomaterials 2014 (2014): 1–4. http://dx.doi.org/10.1155/2014/623043.

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We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

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Faqir, M., A. Manoi, T. Mrotzek, et al. "New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography." Journal of Microelectronics and Electronic Packaging 8, no. 3 (2011): 110–13. http://dx.doi.org/10.4071/imaps.297.

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Raman thermography measurements were performed on AlGaN/GaN multifinger high electron mobility transistors (HEMTs) to determine their channel temperature at various power levels. The devices were mounted on both silver diamond composite and CuW baseplates, in order to benchmark the thermal performance of novel diamond composite baseplates compared with traditional materials. We illustrate that AlGaN/GaN HEMT devices mounted on silver diamond composite baseplates show peak temperatures that are 50% lower than the peak temperatures exhibited by devices mounted on traditional CuW baseplates. This

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Shrestha, Niraj Man, Yuen Yee Wang, Yiming Li, and E. Y. Chang. "Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT." Himalayan Physics 4 (December 22, 2013): 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.

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High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carr

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Chen, Chia Lin, Chih Huan Fang, Yuan Chao Niu, and Yaow Ming Chen. "Impact of Parasitic Capacitor to the GaN HEMT Devices." Applied Mechanics and Materials 764-765 (May 2015): 515–20. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.515.

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The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spik

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SANO, EIICHI, and TAIICHI OTSUJI. "HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA." International Journal of High Speed Electronics and Systems 17, no. 03 (2007): 509–20. http://dx.doi.org/10.1142/s0129156407004709.

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The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

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Sharbati, Samaneh, Iman Gharibshahian, Thomas Ebel, Ali A. Orouji, and Wulf-Toke Franke. "Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors." Journal of Electronic Materials 50, no. 7 (2021): 3923–29. http://dx.doi.org/10.1007/s11664-021-08842-7.

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AbstractA physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimenta

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Dissertations / Theses on the topic "High-electron mobility (HEMT) devices"

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Yu, Tsung-Hsing. "Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/13035.

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Kim, Hyeong Nam. "Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796.

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Song, Di. "III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs) /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20SONG.

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Lee, Kyoung-Keun. "Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28209.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: William. Alan Doolittle; Committee Member: Jeffrey Nause; Committee Member: Linda S. Milor; Committee Member: Shyh-Chiang Shen; Committee Member: Stephen E. Ralph.

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Bloom, Matthew Anthony. "DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors." DigitalCommons@CalPoly, 2013. https://digitalcommons.calpoly.edu/theses/966.

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Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effect

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Masuda, Michael Curtis Meyer. "Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise." DigitalCommons@CalPoly, 2014. https://digitalcommons.calpoly.edu/theses/1169.

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Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN H

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Perrin, Rémi. "Characterization and design of high-switching speed capability of GaN power devices in a 3-phase inverter." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI001/document.

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Le projet industriel français MEGaN vise le développement de module de puissance à base de compostant HEMT en GaN. Une des application industrielle concerne l’aéronautique avec une forte contrainte en isolation galvanique (>100 kV/s) et en température ambiante (200°C). Le travail de thèse a été concentré sur une brique module de puissance (bras d’onduleur 650 V 30 A). L’objectif est d’atteindre un prototype de facteur de forme peu épais, 30 cm2 et embarquant l’ensemble des fonctions driver, alimentation de driver, la capacité de bus et capteur de courant phase. Cet objectif implique un fort

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Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semicon

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Souguir-Aouani, Amira. "Conception d’une nouvelle génération de redresseur Schottky de puissance en Nitrure de Gallium (GaN), étude, simulation et réalisation d’un démonstrateur." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI093/document.

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Il y a actuellement un intérêt croissant pour la construction des dispositifs électroniques à semiconducteur pour les applications domotiques. La technologie des semiconducteurs de puissance a été essentiellement limitée au silicium. Récemment, de nouveaux matériaux ayant des propriétés supérieures sont étudiés en tant que remplaçants potentiels, en particulier : le nitrure de gallium et le carbure de silicium. L'état actuel de développement de la technologie 4H-SiC est beaucoup plus mature que pour le GaN. Cependant, l'utilisation de 4H-SiC n’est pas une solution économiquement rentable pour

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Gleason, Darryl A. "Scanned Probe Spectroscopy of Traps in Cross-Sectioned AlGaN/GaN Devices." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1554299949405238.

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Book chapters on the topic "High-electron mobility (HEMT) devices"

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Papaioannou, G. J., M. J. Papastamatiou, N. Arpatzanis, P. Dimitrakis, C. Michelakis, and Z. Hatzopoulos. "Alpha Particle Radiation Effects in High Electron Mobility Transistors." In Heterostructure Epitaxy and Devices. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0245-9_49.

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Nirmal, D., and J. Ajayan. "A Fundamental Overview of High Electron Mobility Transistor and Its Applications." In Nanoscale Devices. CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-13.

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Douglas, E. A., L. Liu, C. F. Lo, B. P. Gila, F. Ren, and Stephen J. Pearton. "Reliability Issues in AlGaN/GaN High Electron Mobility Transistors." In Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4337-7_13.

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Brennan, Kevin F., Yang Wang, and Duke H. Park. "Computer Experiments for High Electron Mobility Transistors and Avalanching Devices." In Computational Electronics. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2124-9_18.

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Aliparast, Sevda, and Peiman Aliparast. "Physical-Based Simulation of a GaN High Electron Mobility Transistor Devices." In Sustainable Aviation. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-34181-1_18.

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Ren, F., E. A. Douglas, and Stephen J. Pearton. "GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors." In Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4337-7_14.

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Cordier, Yvon, Rémi Comyn, and Eric Frayssinet. "Molecular Beam Epitaxy of AlGaN/GaN High Electron Mobility Transistor Heterostructures for High Power and High-Frequency Applications." In Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing. CRC Press, 2018. http://dx.doi.org/10.1201/9780429503634-9.

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Kaneriya, Rakesh, Gunjan Rastogi, Palash Basu, Rajesh Upadhyay, and Apurba Bhattacharya. "A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications." In Terahertz Technology [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98435.

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Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non-availability of powerful sources and highly sensitive and efficient detectors, the so-called THz gap remains largely unfilled. Despite seamless efforts from electronics and photonics technology researchers, the desired level of technology development to fill the THz gap still remains a challenge. GaN-based HEMT structures have been investigated as potential THz sources and detectors by a number of researchers. This chapter presents a very new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) GaN high electron mobility transition (HEMT) devices. ISBT phenomena are usually demonstrated in photonic devices like a quantum cascade laser (QCL). Here we explore ISBT in an electronic GaN HEMT device. Conventional photonic devices like a QCL are operated at cryogenic temperature to minimize thermal effect. Tuning the conduction band through external gate bias is an advantage of an HEMT device for room temperature (RT) THz applications. This chapter demonstrates the theoretical and experimental novel ISBT phenomenon in GaN HEMT is for potential ambient applications in the THz range.

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Syamal, Binit, and Atanu Kundu. "AlGaN/GaN HEMT Modeling and Simulation." In Handbook for III-V High Electron Mobility Transistor Technologies. CRC Press, 2019. http://dx.doi.org/10.1201/9780429460043-10.

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Dutta, Gourab, Srikanth Kanaga, Nandita DasGupta, and Amitava DasGupta. "AlGaN/GaN HEMT Fabrication and Challenges." In Handbook for III-V High Electron Mobility Transistor Technologies. CRC Press, 2019. http://dx.doi.org/10.1201/9780429460043-6.

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Conference papers on the topic "High-electron mobility (HEMT) devices"

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Nandha Kumar, S., and B. Bindu. "Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)." In 2012 International Conference on Devices, Circuits and Systems (ICDCS 2012). IEEE, 2012. http://dx.doi.org/10.1109/icdcsyst.2012.6188770.

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Pal, Praveen, Yogesh Pratap, Mridula Gupta, Sneha Kabra, and Himani Dua Sehgal. "Performance analysis of ScAlN/GaN High Electron Mobility Transistor (HEMT) for biosensing application." In 2020 5th International Conference on Devices, Circuits and Systems (ICDCS). IEEE, 2020. http://dx.doi.org/10.1109/icdcs48716.2020.243581.

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Begum, M. Sheerin, J. Vijayashree, A. Mohanbabu, and N. Mohankumar. "Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)." In 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8074040.

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Kara, Dogacan, Nazli Donmezer, Talha Furkan Canan, Ozlem Sen, and Ekmel Ozbay. "Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices." In ASME 2016 Heat Transfer Summer Conference collocated with the ASME 2016 Fluids Engineering Division Summer Meeting and the ASME 2016 14th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/ht2016-7367.

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Field plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power densities, GaN HEMTs suffer significantly from the concentrated heating effects in a small region called hotspot located closer to the drain edge of the gate. Although; the stabilizing effect of field plate on the electrical field distribution in HEMTs is known by researchers, its effect on temperature distribution and the hotspot temperature is still not studied to a greater exte

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Kaneriya, R. K., Gunjan Rastogi, P. K. Basu, R. B. Upadhyay, and A. N. Bhattacharya. "Physics based Device Modeling of GaN High Electron Mobility Transistor (HEMT) for Terahertz Applications." In 2019 URSI Asia-Pacific Radio Science Conference (AP-RASC). IEEE, 2019. http://dx.doi.org/10.23919/ursiap-rasc.2019.8738691.

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Wang, Peng, Michael Manno, and Avram Bar-Cohen. "Quantum-Well Si/SiC Self-Cooling for Thermal Management of High Heat Flux GaN HEMT Semiconductor Devices." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75290.

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Wide bandgap semiconductor technology is expected to have a dramatic impact on radar and communications systems. To take full advantage of the power capabilities and small device sizes of wide bandgap semiconductors, new and novel thermal management solutions, especially for high power density, monolithic microwave integrated circuits (MMICs) are in high demand. In this paper, a quantum-well Si/SiC self-cooling concept for hot spot thermal management at the multi-fingered GaN high electron mobility transistor (HEMTs) in the GaN-on-SiC package is proposed and investigated using a three dimensio

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Enoki, Takatomo, Haruki Yokoyama, Yohtaro Umeda, and Taiichi Otsuji. "Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)." In 1997 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1997. http://dx.doi.org/10.7567/ssdm.1997.d-10-1.

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Chvála, Aleš, Robert Szobolovszký, Jaroslav Kováč, et al. "Analysis of Thermal Properties of Power Multifinger HEMT Devices." In ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/ipack2018-8256.

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In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate are presented. The measurement of temperature distribution on HEMT surface using Raman spectroscopy is presented. We have deployed a temperature measurement approach utilizing electrical I-V characteristics of the neighboring Schottky diode under different dissipated power of the transistor heat source. These methods are verified by measurements with micro thermistors. The results show that these methods have a potential

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Dasari, Pradeep, Sudipto Bhattacharya, and Shreepad Karmalkar. "DC extraction of the temperature dependency of low field channel mobility and parasitic resistances in a GaN HEMT." In 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2017. http://dx.doi.org/10.1109/edssc.2017.8126533.

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Liu, Yuwei, Hong Wang, and Rong Zeng. "Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)." In 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.i-7-2.

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Reports on the topic "High-electron mobility (HEMT) devices"

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Nochetto, Horacio C., Nicholas R. Jankowski, Brian Morgan, and Avram Bar-Cohen. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada570599.

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Tompkins, Randy P., and Danh Nguyen. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada618164.

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Shah, Pankaj B., and Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada554911.

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