Relevant bibliographies by topics / High-electron mobility (HEMT) devices

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'High-electron mobility (HEMT) devices'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

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Journal articles on the topic "High-electron mobility (HEMT) devices"

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Green, F. "Charge Fluctuations in High-Electron-Mobility Transistors: A Review." Australian Journal of Physics 46, no. 3 (1993): 447. http://dx.doi.org/10.1071/ph930477.

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The physics of high-electron-mobility transistors (HEMTs) plays a central role in contemporary design for millimetre-wave communications. HEMTs are the early fruits in a harvest of increasingly radical devices whose structural features are measured in nanometres. The operating principles of these devices are richly varied, and almost always far from classical. One of the tasks for device physics is to understand fluctuation phenomena, .or noise: the control of charge fluctuations is basic to high performance, yet the description of these processes remains incomplete if not obscure. This paper reviews some aspects of charge-transport noise that affect HEMT operation.
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Wang, Chih Hao, Liang Yu Su, Finella Lee, and Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices." Applied Mechanics and Materials 764-765 (May 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.

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We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.
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Niu, Di, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, et al. "The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT." Micromachines 12, no. 2 (January 26, 2021): 131. http://dx.doi.org/10.3390/mi12020131.

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The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair process will gradually recover the electrical properties. We study different repair methods and different repair conditions, propose the best repair conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gate voltage is 7 V, and the on-resistance is 23 Ω·mm. The device has a good performance, which proves that the repair conditions can be successfully applied to the fabricate of the p-GaN HEMT devices.
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Meneghesso, Gaudenzio, Matteo Meneghini, Augusto Tazzoli, Nicolo' Ronchi, Antonio Stocco, Alessandro Chini, and Enrico Zanoni. "Reliability issues of Gallium Nitride High Electron Mobility Transistors." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 39–50. http://dx.doi.org/10.1017/s1759078710000097.

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In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.
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Chang, P. C., K. H. Lee, Z. H. Wang, and S. J. Chang. "AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer." Journal of Nanomaterials 2014 (2014): 1–4. http://dx.doi.org/10.1155/2014/623043.

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We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.
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Faqir, M., A. Manoi, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, H. Blanck, S. Rochette, O. Vendier, and M. Kuball. "New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography." Journal of Microelectronics and Electronic Packaging 8, no. 3 (July 1, 2011): 110–13. http://dx.doi.org/10.4071/imaps.297.

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Raman thermography measurements were performed on AlGaN/GaN multifinger high electron mobility transistors (HEMTs) to determine their channel temperature at various power levels. The devices were mounted on both silver diamond composite and CuW baseplates, in order to benchmark the thermal performance of novel diamond composite baseplates compared with traditional materials. We illustrate that AlGaN/GaN HEMT devices mounted on silver diamond composite baseplates show peak temperatures that are 50% lower than the peak temperatures exhibited by devices mounted on traditional CuW baseplates. This is a dramatic improvement in terms of heat extraction as a basis to enable longer device lifetimes and better performance. In addition, time-resolved Raman thermography measurements were carried out to obtain the thermal dynamics of devices on the silver-diamond baseplate and on heat diffusion during pulsed device operation. This time-dependent information is of great importance for reliability and failure analyses, as pulsed operation of a HEMT is a typical device operation condition. Finite-element thermal simulations were performed for comparison with experimental results, and good agreement with the experimental data was obtained.
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Shrestha, Niraj Man, Yuen Yee Wang, Yiming Li, and E. Y. Chang. "Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT." Himalayan Physics 4 (December 22, 2013): 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.

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High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carrier properties of HEMT also depend on thickness of spacer layer. Our simulation showed that the mobility of 2DEG attains its maximum value at the 0.5 nm thick AlN layer but carrier concentration increases with spacer thickness. Finally, drain current increases with increasing spacer layer thickness and reach maximum value at 1.2nm thick spacer layer.The Himalayan Physics Vol. 4, No. 4, 2013 Page: 14-17 Uploaded date: 12/22/2013
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Chen, Chia Lin, Chih Huan Fang, Yuan Chao Niu, and Yaow Ming Chen. "Impact of Parasitic Capacitor to the GaN HEMT Devices." Applied Mechanics and Materials 764-765 (May 2015): 515–20. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.515.

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The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spike and damage the GaN HEMT.
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SANO, EIICHI, and TAIICHI OTSUJI. "HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA." International Journal of High Speed Electronics and Systems 17, no. 03 (September 2007): 509–20. http://dx.doi.org/10.1142/s0129156407004709.

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The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.
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Sharbati, Samaneh, Iman Gharibshahian, Thomas Ebel, Ali A. Orouji, and Wulf-Toke Franke. "Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors." Journal of Electronic Materials 50, no. 7 (April 20, 2021): 3923–29. http://dx.doi.org/10.1007/s11664-021-08842-7.

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AbstractA physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.
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Dissertations / Theses on the topic "High-electron mobility (HEMT) devices"

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Yu, Tsung-Hsing. "Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/13035.

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Kim, Hyeong Nam. "Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796.

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Song, Di. "III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs) /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20SONG.

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Lee, Kyoung-Keun. "Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28209.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Chair: William. Alan Doolittle; Committee Member: Jeffrey Nause; Committee Member: Linda S. Milor; Committee Member: Shyh-Chiang Shen; Committee Member: Stephen E. Ralph.
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Bloom, Matthew Anthony. "DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors." DigitalCommons@CalPoly, 2013. https://digitalcommons.calpoly.edu/theses/966.

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Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors. In this thesis, the DC, RF, and thermal characteristics of GaN HEMTs grown on Si-substrates will be investigated through a series of accelerated lifetime experiments. A figure of merit known as the critical voltage is explored and used as the primary means by which the GaN-on-Si devices are electrically strained. The critical voltage is defined as the specific voltage bias by which a sudden change in device performance is experienced due to a deformation of the target GaN HEMT’s epitaxial structure. Literature on the topic details the inevitable formation of pits and cracks localized under the drain-side of the gate contact that promote electrical degradation of the devices via the inverse piezoelectric effect. Characteristic changes in device performance due to high field strain are recorded and physical mechanisms behind observed degraded performance are investigated. The study assesses the performance of roughly 60 GaN-on-Si HEMTs in four experimental settings. The first experiment investigates the critical voltage of the device in the off-state mode of operation and explores device recovery post-stress. The second experiment analyzes alterations in DC and RF performance under varying thermal loads and tracks the dependence of the critical voltage on temperature. The third experiment examines electron trapping within the HEMTs as well as detrapping methodologies. The final experiment links the changes in RF performance induced by high field strain to the small-signal parameters of the HEMT. Findings from the research conclude the existence of process-dependent defects that originate during the growth process and lead to inherent electron traps in unstressed devices. Electron detrapping due to high electric field stress applied to the HEMTs was observed, potentially localized within the AlGaN layer or GaN buffer of the HEMT. The electron detrapping in turn contributed to drain current recovery and increased unilateral performance of the transistor in the RF regime. Thermal experiments resulted in a positive shift in critical voltage, which enhanced gate leakage current at lower gate voltage drives.
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Masuda, Michael Curtis Meyer. "Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise." DigitalCommons@CalPoly, 2014. https://digitalcommons.calpoly.edu/theses/1169.

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Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for high frequency operation. However, over time and use these devices degrade in a manner that is not well understood. This research utilizes low frequency noise (LFN) as a method for analyzing changes and degradation mechanisms in GaN-on-Si devices due to gate stress. LFN is a useful tool for probing different regions of the device that cannot be measured through direct means. LFN generation in GaN HEMTs is based on the carrier fluctuation theory of 1/f noise generation which states fluctuations in the number of charge carriers results in conductance fluctuations that produce a Lorentzian noise spectrum. The summing Lorentzian noise spectra from multiple traps leads to 1/f and random telegraph signal (RTS) noise. The primary cause of carrier fluctuations are electron traps near the 2DEG and in the AlGaN bulk. These traps occur naturally due to dislocations and impurities in the manufacturing process, but new traps can be generated by the inverse-piezoelectric effect during gate stress. This thesis introduces noise and presents a circuit to bias the devices and measure gate and drain LFN simultaneously. Three measurements are performed before and after gate DC stress at three different temperatures: DC characterization, capacitance-voltage (C-V) measurements, and LFN measurements. The DC characteristics show an increase in gate leakage after stress caused by an increase in traps after degradation consistent with trap assisted tunneling. However, the leakage current on the drain and source side differ before and after stress leading to the conclusion that the source side of the gate is more sensitive to gate stress. Gate leakage current on the drain side is also sensitive to temperature due to thermionic trap assisted tunneling. Hooge parameter calculations agree with previous research. The LFN results show an increase in gate and drain noise power, SIg(f) and SId(f), in accordance with increased gate leakage current under cutoff bias. RTS noise is also observed to increase in frequency with increased temperature. Activation energies for RTS noise are extracted and qualitatively linked to trap depth based on the McWhorter trap model.
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Perrin, Rémi. "Characterization and design of high-switching speed capability of GaN power devices in a 3-phase inverter." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI001/document.

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Le projet industriel français MEGaN vise le développement de module de puissance à base de compostant HEMT en GaN. Une des application industrielle concerne l’aéronautique avec une forte contrainte en isolation galvanique (>100 kV/s) et en température ambiante (200°C). Le travail de thèse a été concentré sur une brique module de puissance (bras d’onduleur 650 V 30 A). L’objectif est d’atteindre un prototype de facteur de forme peu épais, 30 cm2 et embarquant l’ensemble des fonctions driver, alimentation de driver, la capacité de bus et capteur de courant phase. Cet objectif implique un fort rendement énergétique, et le respect de l’isolation galvanique alors que la contrainte en surface est forte. Le manuscrit, outre l’état de l’art relatif au module de puissance et notamment celui à base de transistor GaN HEMT, aborde une solution d’isolation de signaux de commande à base de micro-transformateur. Des prototypes de micro-transformateur ont été caractérisés et vieillis pendant 3000 H pour évaluer la robustesse de la solution. Les travaux ont contribué à la caractérisation de plusieurs composants GaN afin de mûrir des modèles pour la simulation circuit de topologie de convertisseur. Au sein du travail collaboratif MEGaN, notre contribution ne concernait pas la conception du circuit intégré (driver de grille), tout en ayant participé à la validation des spécifications, mais une stratégie d’alimentation du driver de grille. Une première proposition d’alimentation isolée pour le driver de grille a privilégié l’utilisation de composants GaN basse-tension. La topologie Flyback résonante avec clamp permet de tirer le meilleur parti de ces composants GaN mais pose la contrainte du transformateur de puissance. Plusieurs technologies pour la réalisation du transformateur ont été validées expérimentalement et notamment une proposition originale enfouissement du composant magnétique au sein d’un substrat polymère haute-température. En particulier, un procédé de fabrication peu onéreux permet d’obtenir un dispositif fiable (1000 H de cyclage entre - 55 ; + 200°C), avec un rendement intrinsèque de 88 % pour 2 W transférés. La capacité parasite d’isolation est réduite par rapport aux prototypes précédent. Deux prototypes d’alimentations à forte intégration utilisent soit les transistors GaN basse tension (2.4 MHz, 2 W, 74 %, 6 cm2), soit un circuit intégré dédié en technologie CMOS SOI, conçu pour l’application (1.2 MHz, 2 W, 77 %, 8.5 cm2). Le manuscrit propose par la suite une solution intégrable de mesure de courant de phase du bras de pont, basé sur une magnétorésistance. La comparaison expérimentale vis à vis d’une solution à résistance de shunt. Enfin, deux prototypes de convertisseur sont décrits, dont une a pu faire l’objet d’une validation expérimentale démontrant des pertes en commutation réduites
The french industrial project MEGaN targets the development of power module based on GaN HEMT transistors. One of the industrial applications is the aeronautics field with a high-constraint on the galvanic isolation (>100 kV/s) and ambient temperature (200°C). The intent of this work is the power module block (3 phases inverter 650 V 30 A). The goal is to obtain a small footprint module, 30 cm2, with necessary functions such as gate driver, gate driver power supply, bulk capacitor and current phase sensor. This goal implies high efficiency as well as respect of the constraint of galvanic isolation with an optimized volume. This dissertation, besides the state of the art of power modules and especially the GaN HEMT ones, addressed a control signal isolation solution based on coreless transformers. Different prototypes based on coreless transformers were characterized and verified over 3000 hours in order to evaluate their robustness. The different studies realized the characterization of the different market available GaN HEMTs in order to mature a circuit simulation model for various converter topologies. In the collaborative work of the project, our contribution did not focus on the gate driver chip design even if experimental evaluation work was made, but a gate driver power supply strategy. The first gate driver isolated power supply design proposition focused on the low-voltage GaN HEMT conversion. The active-clamp Flyback topology allows to have the best trade-off between the GaN transistors and the isolation constraint of the transformer. Different transformer topolgies were experimentally performed and a novel PCB embedded transformer process was proposed with high-temperature capability. A lamination process was proposed for its cost-efficiency and for the reliability of the prototype (1000 H cycling test between - 55; + 200°C), with 88 % intrinsic efficiency. However, the transformer isolation capacitance was drastically reduced compared to the previous prototypes. 2 high-integrated gate driver power supply prototypes were designed with: GaN transistors (2.4 MHz, 2 W, 74 %, 6 cm2), and with a CMOS SOI dedicated chip (1.2 MHz, 2 W, 77 %, 8.5 cm2). In the last chapter, this dissertation presents an easily integrated solution for a phase current sensor based on the magnetoresistance component. The comparison between shunt resistor and magnetoresistance is experimentally performed. Finally, two inverter prototypes are presented, with one multi-level gate driver dedicated for GaN HEMT showing small switching loss performance
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Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.
ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semiconductor technology is that it combines a very wide band-gap with high electron mobility, which amounts to higher levels of gain at very high frequencies. HEMT devices based on GaN, is a fairly new technology and not many nonlinear models have been proposed in literature. This thesis details the design of hardware and software used in the development of the nonlinear models. An intermodulation distortion (IMD) measurement setup was developed to measure the second and higher-order derivative of the nonlinear drain current. The derivatives are extracted directly from measurements and are required to improve the nonlinear model IMD predictions. Nonlinear model extraction software was developed to automate the modelling process, which was fundamental in the nonlinear model investigation. The models are implemented in Agilent’s Advanced Design System (ADS) and it is shown that the models are capable of accurately predicting the measured S-parameters, large-signal singletone and two-tone behaviour of the GaN devices.
AFRIKAANSE OPSOMMING: Die hoofdoel van hierdie tesis is om die formulering, ontrekking en validasie van nie-lineêre modelle vir onverpakte gallium nitraat (GaN) hoë-elektronmobilisering transistors (HEMTs) te dokumenteer. Die transistors is vervaaardig by die Interuniversity Microelectronics Centre (IMEC) in Leuven, België. GaN-halfgeleier tegnologie is besig om vinnig veld te wen en daar word voorspel dat hierdie transistors ʼn belangrike rol gaan speel in RF en mikrogolf kragversterker toepassings. Een van die hoof voordele van die nuwe GaN-halfgeleier tegnologie is dat dit 'n baie wyd band-gaping het met hoë-elektronmobilisering, wat lei tot hoë aanwins by mikrogolf frekwensies. GaN HEMTs is 'n redelik nuwe tegnologie en nie baie nie-lineêre modelle is al voorgestel in literatuur nie. Hierdie tesis ondersoek die ontwerp van die hardeware en sagteware soos gebruik in die ontwikkeling van nie-lineêre modelle. 'n Intermodulasie distorsie-opstelling (IMD-opstelling) is ontwikkel vir die meting van die tweede en hoër orde afgeleides van die nie-lineêre stroom. Die afgeleides is direk uit die metings onttrek en moet die nie-lineêre IMD-voorspellings te verbeter. Nie-lineêre onttrekking sagteware is ontwikkel om die modellerings proses te outomatiseer. Die modelle word geïmplementeer in Agilent se Advanced Design System (ADS) en bewys dat die modelle in staat is om akkurate afgemete S-parameters, grootsein enkeltoon en tweetoon gedrag van die GaN-transistors te kan voorspel.
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Souguir-Aouani, Amira. "Conception d’une nouvelle génération de redresseur Schottky de puissance en Nitrure de Gallium (GaN), étude, simulation et réalisation d’un démonstrateur." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI093/document.

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Il y a actuellement un intérêt croissant pour la construction des dispositifs électroniques à semiconducteur pour les applications domotiques. La technologie des semiconducteurs de puissance a été essentiellement limitée au silicium. Récemment, de nouveaux matériaux ayant des propriétés supérieures sont étudiés en tant que remplaçants potentiels, en particulier : le nitrure de gallium et le carbure de silicium. L'état actuel de développement de la technologie 4H-SiC est beaucoup plus mature que pour le GaN. Cependant, l'utilisation de 4H-SiC n’est pas une solution économiquement rentable pour la réalisation des redresseurs Schottky 600 V. Les progrès récents dans le développement des couches épitaxiées de GaN de type n sur substrat Si offrent de nouvelles perspectives pour le développement des dispositifs de puissance à faible coût. C’est dans ce cadre que ma thèse s’inscrit pour réaliser avec ce type de substrat, un redresseur Schottky de puissance avec un calibre en tension de l’ordre de 600V. Deux architectures de redresseurs sont exposées. La première est une architecture pseudo-verticale proposée dans le cadre du projet G2ReC et la deuxième est une architecture latérale à base d’hétérojonction AlGaN/GaN obtenue à partir d'une structure de transistor HEMT. L’optimisation de ces deux dispositifs en GaN est issue de simulation par la méthode des éléments finis. Dans ce cadre, une adaptation des modèles de simulation à partir des paramètres physiques du GaN extraits depuis la littérature a été effectuée. Ensuite, une étude d’influence des paramètres géométriques et technologiques sur les propriétés statiques en direct et en inverse des redresseurs a été réalisée. Enfin, des structures de tests ont été fabriquées et caractérisées afin d’évaluer et d’optimiser le caractère prédictif des simulations par éléments finis. Ces études nous ont conduit à identifier l'origine des limites des structures de première génération et de définir de nouvelles structures plus performantes
There is increasing interest in the fabrication of power semiconductor devices in home automation applications. Power semiconductor technology has been essentially confined to Si. Recently, new materials with superior properties are being investigated as potential replacements, in particular silicon carbide (SiC) and gallium nitride (GaN). The current state of development of SiC technology is much more mature than for GaN. However, the use of 4H-SiC is not a cost effective solution for realizing a medium and high voltage Schottky diode. Recent advances on the development of thick n-type GaN epilayers on Si substrate offer new prospects for the development of a low-cost Schottky rectifiers for at least medium voltage range 600 V. In the context of our thesis, two types of GaN based rectifier architectures have been studied. The first one is a pseudo-vertical architecture proposed during previous G2ReC project. The second one has a lateral structure with AlGaN/GaN heterojunction, derived from a HEMT structure. The optimization of the Schottky rectifiers has been achieved by finite element simulations. As a first step, the models are implemented in the software and adjusted with the parameters described in the literature. The influence of the geometrical and physical parameters on the specific on-resistance and on the breakdown voltage has been analysed. Finally, the test devices have been realized and characterized to optimize and to validate the parameters of these models. These studies lead to identify the limits of the structures and create a new generation of powerful structures
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Gleason, Darryl A. "Scanned Probe Spectroscopy of Traps in Cross-Sectioned AlGaN/GaN Devices." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1554299949405238.

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Book chapters on the topic "High-electron mobility (HEMT) devices"

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Papaioannou, G. J., M. J. Papastamatiou, N. Arpatzanis, P. Dimitrakis, C. Michelakis, and Z. Hatzopoulos. "Alpha Particle Radiation Effects in High Electron Mobility Transistors." In Heterostructure Epitaxy and Devices, 281–84. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0245-9_49.

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Nirmal, D., and J. Ajayan. "A Fundamental Overview of High Electron Mobility Transistor and Its Applications." In Nanoscale Devices, 275–97. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa, plc, 2019.: CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-13.

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Douglas, E. A., L. Liu, C. F. Lo, B. P. Gila, F. Ren, and Stephen J. Pearton. "Reliability Issues in AlGaN/GaN High Electron Mobility Transistors." In Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, 431–53. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4337-7_13.

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Brennan, Kevin F., Yang Wang, and Duke H. Park. "Computer Experiments for High Electron Mobility Transistors and Avalanching Devices." In Computational Electronics, 97–105. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2124-9_18.

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Aliparast, Sevda, and Peiman Aliparast. "Physical-Based Simulation of a GaN High Electron Mobility Transistor Devices." In Sustainable Aviation, 201–16. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-34181-1_18.

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Ren, F., E. A. Douglas, and Stephen J. Pearton. "GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors." In Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, 455–74. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4337-7_14.

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Cordier, Yvon, Rémi Comyn, and Eric Frayssinet. "Molecular Beam Epitaxy of AlGaN/GaN High Electron Mobility Transistor Heterostructures for High Power and High-Frequency Applications." In Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing, 201–23. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor &: CRC Press, 2018. http://dx.doi.org/10.1201/9780429503634-9.

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Kaneriya, Rakesh, Gunjan Rastogi, Palash Basu, Rajesh Upadhyay, and Apurba Bhattacharya. "A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications." In Terahertz Technology [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98435.

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Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non-availability of powerful sources and highly sensitive and efficient detectors, the so-called THz gap remains largely unfilled. Despite seamless efforts from electronics and photonics technology researchers, the desired level of technology development to fill the THz gap still remains a challenge. GaN-based HEMT structures have been investigated as potential THz sources and detectors by a number of researchers. This chapter presents a very new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) GaN high electron mobility transition (HEMT) devices. ISBT phenomena are usually demonstrated in photonic devices like a quantum cascade laser (QCL). Here we explore ISBT in an electronic GaN HEMT device. Conventional photonic devices like a QCL are operated at cryogenic temperature to minimize thermal effect. Tuning the conduction band through external gate bias is an advantage of an HEMT device for room temperature (RT) THz applications. This chapter demonstrates the theoretical and experimental novel ISBT phenomenon in GaN HEMT is for potential ambient applications in the THz range.
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Syamal, Binit, and Atanu Kundu. "AlGaN/GaN HEMT Modeling and Simulation." In Handbook for III-V High Electron Mobility Transistor Technologies, 251–73. CRC Press, 2019. http://dx.doi.org/10.1201/9780429460043-10.

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Dutta, Gourab, Srikanth Kanaga, Nandita DasGupta, and Amitava DasGupta. "AlGaN/GaN HEMT Fabrication and Challenges." In Handbook for III-V High Electron Mobility Transistor Technologies, 133–71. CRC Press, 2019. http://dx.doi.org/10.1201/9780429460043-6.

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Conference papers on the topic "High-electron mobility (HEMT) devices"

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Nandha Kumar, S., and B. Bindu. "Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)." In 2012 International Conference on Devices, Circuits and Systems (ICDCS 2012). IEEE, 2012. http://dx.doi.org/10.1109/icdcsyst.2012.6188770.

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Pal, Praveen, Yogesh Pratap, Mridula Gupta, Sneha Kabra, and Himani Dua Sehgal. "Performance analysis of ScAlN/GaN High Electron Mobility Transistor (HEMT) for biosensing application." In 2020 5th International Conference on Devices, Circuits and Systems (ICDCS). IEEE, 2020. http://dx.doi.org/10.1109/icdcs48716.2020.243581.

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Begum, M. Sheerin, J. Vijayashree, A. Mohanbabu, and N. Mohankumar. "Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)." In 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8074040.

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Kara, Dogacan, Nazli Donmezer, Talha Furkan Canan, Ozlem Sen, and Ekmel Ozbay. "Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices." In ASME 2016 Heat Transfer Summer Conference collocated with the ASME 2016 Fluids Engineering Division Summer Meeting and the ASME 2016 14th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/ht2016-7367.

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Field plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power densities, GaN HEMTs suffer significantly from the concentrated heating effects in a small region called hotspot located closer to the drain edge of the gate. Although; the stabilizing effect of field plate on the electrical field distribution in HEMTs is known by researchers, its effect on temperature distribution and the hotspot temperature is still not studied to a greater extend. For this purpose, finite element thermal modelling of devices with different sizes of field plates are performed using the joule heating distribution data obtained from 2D electrical simulations. Results obtained from such combined model show that the existence of a field plate changes the electrical field, therefore the heat generation distribution within device. Moreover; increasing the size of the field plate has an effect on the maximum temperature at the hotspot region. The results are used to analyze these effects and improve usage of field plates for high electron mobility transistors to obtain better temperature profiles.
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Kaneriya, R. K., Gunjan Rastogi, P. K. Basu, R. B. Upadhyay, and A. N. Bhattacharya. "Physics based Device Modeling of GaN High Electron Mobility Transistor (HEMT) for Terahertz Applications." In 2019 URSI Asia-Pacific Radio Science Conference (AP-RASC). IEEE, 2019. http://dx.doi.org/10.23919/ursiap-rasc.2019.8738691.

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Wang, Peng, Michael Manno, and Avram Bar-Cohen. "Quantum-Well Si/SiC Self-Cooling for Thermal Management of High Heat Flux GaN HEMT Semiconductor Devices." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75290.

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Wide bandgap semiconductor technology is expected to have a dramatic impact on radar and communications systems. To take full advantage of the power capabilities and small device sizes of wide bandgap semiconductors, new and novel thermal management solutions, especially for high power density, monolithic microwave integrated circuits (MMICs) are in high demand. In this paper, a quantum-well Si/SiC self-cooling concept for hot spot thermal management at the multi-fingered GaN high electron mobility transistor (HEMTs) in the GaN-on-SiC package is proposed and investigated using a three dimensional (3-D) thermal-electric coupling simulation. The impact of electric current, cooler size, Si/SiC substrate thickness, Si/SiC thermal conductivity, and interfacial parasitic effect on the hot spot cooling is examined and discussed. The preliminary modeling results strongly suggest that self-cooling phenomenon inherent in the quantum-well Si/SiC substrate can be used to remove local high heat flux hot spot on the semiconductor devices.
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Enoki, Takatomo, Haruki Yokoyama, Yohtaro Umeda, and Taiichi Otsuji. "Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)." In 1997 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1997. http://dx.doi.org/10.7567/ssdm.1997.d-10-1.

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Chvála, Aleš, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Luboš Černaj, Patrik Príbytný, et al. "Analysis of Thermal Properties of Power Multifinger HEMT Devices." In ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/ipack2018-8256.

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In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate are presented. The measurement of temperature distribution on HEMT surface using Raman spectroscopy is presented. We have deployed a temperature measurement approach utilizing electrical I-V characteristics of the neighboring Schottky diode under different dissipated power of the transistor heat source. These methods are verified by measurements with micro thermistors. The results show that these methods have a potential for HEMT analysis in thermal management. The features and limitations of the proposed methods are discussed. The thermal parameters of materials used in the device are extracted from temperature distribution in the structure with the support of 3-D device thermal simulation. The thermal analysis of the multifinger power HEMT is performed. The effects of the structure design and fabrication processes from semiconductor layers, metallization, and packaging up to cooling solutions are investigated. The analysis of thermal behavior can help during design and optimization of power HEMT.
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Dasari, Pradeep, Sudipto Bhattacharya, and Shreepad Karmalkar. "DC extraction of the temperature dependency of low field channel mobility and parasitic resistances in a GaN HEMT." In 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2017. http://dx.doi.org/10.1109/edssc.2017.8126533.

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Liu, Yuwei, Hong Wang, and Rong Zeng. "Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)." In 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.i-7-2.

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Reports on the topic "High-electron mobility (HEMT) devices"

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Nochetto, Horacio C., Nicholas R. Jankowski, Brian Morgan, and Avram Bar-Cohen. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. Fort Belvoir, VA: Defense Technical Information Center, October 2012. http://dx.doi.org/10.21236/ada570599.

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Tompkins, Randy P., and Danh Nguyen. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada618164.

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Shah, Pankaj B., and Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Fort Belvoir, VA: Defense Technical Information Center, December 2011. http://dx.doi.org/10.21236/ada554911.

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