Relevant bibliographies by topics / High electron mobility transistor

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'High electron mobility transistor'

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Published: 4 June 2021
Last updated: 7 July 2024

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Journal articles on the topic "High electron mobility transistor"

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Amar, Abdelhamid, Bouchaïb Radi, and Hami El Abdelkhalak. "Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)." Applied Sciences 11, no. 22 (November 13, 2021): 10720. http://dx.doi.org/10.3390/app112210720.

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The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.
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Mimura, Takashi. "Development of High Electron Mobility Transistor." Japanese Journal of Applied Physics 44, no. 12 (December 8, 2005): 8263–68. http://dx.doi.org/10.1143/jjap.44.8263.

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Volcheck V. S., Lovshenko I. Yu., and Stempitsky V. R. "Design optimization of the gallium nitride high electron mobility transistor with graphene and boron nitride heat-spreading elements." Semiconductors 57, no. 3 (2023): 216. http://dx.doi.org/10.21883/sc.2023.03.56239.4732.

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The self-heating effect has long been a persistent issue for high electron mobility transistors based on gallium nitride due to their inherently poor heat dissipation capability. Although a wide variety of thermal management solutions has to date been proposed, the problem of the extremely non-uniform heat dissipation at the micrometer scale is still challenging. It has recently been demonstrated, however, that the performance of gallium nitride high electron mobility transistors can be substantially improved by the introduction of various heat-spreading elements based on graphene, boron nitride or diamond. In this paper, using numerical simulation, we carried out a design optimization procedure for a normally-off gallium nitride high electron mobility transistor containing both graphene and cubic boron nitride layers. First, a screening experiment based on a very economical Plackett-Burman design was performed in order to find the most critical geometric parameters that influence the dc characteristics. After that, a full two-level factorial experiment consisting of three factors was implemented and an optimized parameter set was yielded. By applying this set, the output power was increased by 11.35%. The combination of the most significant parameters does not include any factors related to the heat-spreading layers. Keywords: gallium nitride, high electron mobility transistor, optimization, Plackett-Burman design, screening experiment, self-heating.
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Djamdji, F., and R. Blunt. "Hall mobility profiling in high electron mobility transistor structures." Materials Science and Engineering: B 20, no. 1-2 (June 1993): 77–81. http://dx.doi.org/10.1016/0921-5107(93)90401-8.

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Win, Pascal, Yves Druelle, Yvon Cordier, Didier Adam, Jacques Favre, and Alain Cappy. "High-PerformanceIn0.3Ga0.7As/In0.29Al0.71As/GaAsMetamorphic High-Electron-Mobility Transistor." Japanese Journal of Applied Physics 33, Part 1, No. 6A (June 15, 1994): 3343–47. http://dx.doi.org/10.1143/jjap.33.3343.

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Đorđević, Vladica, Zlatica Marinković, and Olivera Pronić-Rančić. "COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS." Facta Universitatis, Series: Automatic Control and Robotics 16, no. 2 (October 24, 2017): 117. http://dx.doi.org/10.22190/fuacr1702119d.

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The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.
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Wojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, et al. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts." Micromachines 9, no. 11 (October 25, 2018): 546. http://dx.doi.org/10.3390/mi9110546.

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AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.
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Anand, M. B., P. K. Ghosh, P. G. Kornreich, and D. J. Nicholson. "A traveling-wave high electron mobility transistor." IEEE Transactions on Microwave Theory and Techniques 41, no. 4 (April 1993): 624–31. http://dx.doi.org/10.1109/22.231656.

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Baca, Albert G., Andrew M. Armstrong, Andrew A. Allerman, Erica A. Douglas, Carlos A. Sanchez, Michael P. King, Michael E. Coltrin, Torben R. Fortune, and Robert J. Kaplar. "An AlN/Al0.85Ga0.15N high electron mobility transistor." Applied Physics Letters 109, no. 3 (July 18, 2016): 033509. http://dx.doi.org/10.1063/1.4959179.

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Kornreich, Phillipp G., Lois Walsh, James Flattery, and Saliman Isa. "Proposed size-effect high-electron-mobility transistor." Solid-State Electronics 29, no. 4 (April 1986): 421–28. http://dx.doi.org/10.1016/0038-1101(86)90089-4.

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Dissertations / Theses on the topic "High electron mobility transistor"

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McQuaid, Seamus A. "The high electron mobility transistor." Thesis, University of Manchester, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293300.

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Chen, Jr-Tai. "MOCVD growth of GaN-based high electron mobility transistor structures." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117138.

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The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaN-based HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures. The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN,  AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback for adjusting growth parameters and developing improved growth processes.
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Zhao, Xu S. M. Massachusetts Institute of Technology. "Electric field engineering in GaN high electron mobility transistors." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/43062.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2008.
Includes bibliographical references (leaves 66-70).
In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase the frequency to mm-wave frequencies. The goal of this thesis has been to identify new solutions to some of the main challenges to increase this frequency performance even further. Electron velocity is a critical parameter affecting the transistor performance. In standard GaN transistors, the extremely high electric fields present in the channel of the device reduce the average electron velocity well below the peak electron velocity, resulting in low cutoff frequencies. In this thesis, we introduced a partial recess in the drain access region of the transistor to engineer the electric field along the channel of the device without introducing parasitic capacitances. By reducing the peak electric field, the average electron velocity is increased by 50%. This new technology has the potential to improve not only the cutoff frequencies, but also the breakdown voltage of GaN transistors. To successfully engineer the electric field in GaN devices, an accurate, reliable and low damage etching technology is needed. However none of the traditional GaN dry etching technologies meets these requirements. This lack of suitable technology has motivated us to develop a new atomic layer etching technique of AlGaN/GaN structures. This technology has been shown to be a self limited process with very high reliability and low damage, which will be very useful both in electric field engineering and gate recess. Finally, another factor hindering GaN HEMTs from competing with InGaAs devices at high frequencies are their high parasitic capacitances and resistances. In this thesis, ohmic drain contacts are replaced with Schottky drain contacts to reduce the drain access resistance.
(cont) ADS simulations predict a very significant increase in the cutoff frequencies by virtue of the lowered parasitic resistances. In conclusion, the theoretical and experimental work developed during this project has demonstrated the great potential of three new technologies to overcome the main challenges of mm-wave GaN HEMTs. The application of these technologies to actual devices is under way and it will represent an important element of the ultra-high GaN transistors of the future.
by Xu Zhao.
S.M.
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Yu, Tsung-Hsing. "Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/13035.

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ISLAM, MD SHAHRUL. "Can Asymmetry Quench Self-Heating in MOS High Electron Mobility Transistors?" OpenSIUC, 2020. https://opensiuc.lib.siu.edu/theses/2736.

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High electron mobility transistors (HEMTs) have long been studied for high frequency and high-power application. Among widely known high electron mobility transistors, AlGaN/GaN HEMTs are having the upper hand due to high electron mobility of the GaN channel. Over the times, issues like current collapse, gate leakage, self-heating and gate lag have questioned the performance and reliability of these devices. In the recent years, engineers have come up with newer architectures to address some of these issues. Inserting a high-k dielectric oxide layer in the gate stack proved to be an effective solution to mitigate gate leakage, reduce interfacial traps and improve optimal working conditions. This work aims to study the reliability aspect of these so-called metal-oxide-semiconductor high electron mobility transistors (MOS-HEMT) specifically, HfO2 and HfZrO2 MOS-HEMTs. It was found through numerical simulations that though HfO2 and HfZrO2 dielectrics were able to mitigate gate leakage current, they tend to accumulate more heat in the channel region with respect to the conventional silicon nitride (SiN) passivated counterparts. Moreover, few asymmetric structures were proposed where silicon nitride was placed in the dielectric layer along with HfO2/HfZrO2. In this study it was found that these asymmetric structures showed superior thermal performance while showing near-zero gate leakage current.
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Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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Aminbeidokhti, Amirhossein. "Measurement and Analysis of Electron Mobility in GaN Power HEMTs." Thesis, Griffith University, 2016. http://hdl.handle.net/10072/368007.

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High-electron-mobility transistor (HEMT) is a promising device for power applications because of their high breakdown voltage, high electron mobility in two-dimensional electron gas (2DEG) area, fast switching capability, high-temperature operating capabilities, compatibility with standard electronic circuits, and low production cost. In contrast to the gate in metal–oxide–semiconductor field-effect transistor (MOSFET), which extends from source to drain, the gate in HEMT splits the device into two main sections: field-effect (section under the gate) and resistive (section outside the gate). Resistances of the 2DEG outside the gate sections are constant and modelled by fixed resistors. However, the 2DEG resistance under the gate section is dependent to the gate voltage, which can be modelled by channel resistance of a field-effect transistor (FET). Since these resistances depend on the mobility of electrons in the 2DEG, it is important to separate the electron mobility in the resistive and field-effect sections. Therefore, existence of the resistive section in the HEMT structure leads to requiring new methods for the HEMT mobility measurement. Also, since there is no model for the HEMT in SPICE, novel models are required for the SPICE simulation of the HEMT. In order to solve these issues:
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith School of Engineering
Science, Environment, Engineering and Technology
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Stevens, Lorin E. "Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor." DigitalCommons@USU, 2013. http://digitalcommons.usu.edu/etd/1506.

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Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both piezoelectric materials). This piezoelectric effect can be triggered by voltage applied to the device's gate contact and the existence of an HEMT-unique "two-dimensional electron gas" (2DEG) at the GaN-AlGaN interface. COMSOL Multiphysics computer software has been utilized to create a finite element (i.e. piece-by-piece) simulation to visualize both temperature and stress/strain distributions that can occur in the device, by coupling together (i.e. solving simultaneously) the thermal, electrical, structural, and piezoelectric effects inherent in the device. The 2DEG has been modeled not with the typically-used self-consistent quantum physics analytical equations, rather as a combined localized heat source* (thermal) and surface charge density* (electrical) boundary condition. Critical values of stress/strain and their respective locations in the device have been identified. Failure locations have been estimated based on the critical values of stress and strain, and compared with reports in literature. The knowledge of the overall stress/strain distribution has assisted in determining the likely device failure mechanisms and possible mitigation approaches. The contribution and interaction of individual stress mechanisms including piezoelectric effects and thermal expansion caused by device self-heating (i.e. fast-moving electrons causing heat) have been quantified. * Values taken from results of experimental studies in literature
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Ture, Erdin [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "GaN-based Tri-gate high electron mobility transistors." Freiburg : Universität, 2016. http://d-nb.info/1143602811/34.

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Joh, Jungwoo. "Degradation mechanisms of GaN high electron mobility transistors." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38670.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.
Includes bibliographical references (p. 83-85).
In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. However, physical understanding of the fundamental reliability mechanisms of GaN HEMTs is still lacking today. In this thesis, we carry out systematic reliability experiments on industrial GaN HEMTs provided by our collaborators, TriQuint Semiconductor and BAE systems. In our study, GaN HEMTs have been electrically stressed at various bias conditions while they are being characterized by a benign characterization suite. We have confirmed that electrical stress on devices results in an increase in drain resistance RD and a decrease in maximum drain current IDmax. During the stress, traps are found to be generated. We have seen that this degradation is driven mostly by electric field, and current is less relevant to electrical degradation.
(cont.) From a set of our experiments, we have hypothesized that the main mechanism behind device degradation is defect formation through the inverse piezoelectric effect and subsequent electron trapping. Unlike current conventional wisdom, hot electrons are less likely to be the direct cause of electrical degradation in the devices that we have studied. Our studies suggest a number of possibilities to improve the electrical reliability of GaN HEMTs.
by Jungwoo Joh.
S.M.
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Books on the topic "High electron mobility transistor"

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Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2003.

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Paul, Horowitz. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

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Paul, Horowitz. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

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United States. National Aeronautics and Space Administration., ed. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

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Paul, Horowitz. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

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United States. National Aeronautics and Space Administration., ed. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

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United States. National Aeronautics and Space Administration., ed. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

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Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

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Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

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Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

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Book chapters on the topic "High electron mobility transistor"

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Palankovski, Vassil, and Rüdiger Quay. "High Electron Mobility Transistors." In Computational Microelectronics, 204–35. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0560-3_6.

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Van Hove, M., C. Van Hoof, W. De Raedt, P. Jansen, I. Dobbelaere, J. Peeters, G. Borghs, and M. Van Rossum. "A Resonant Tunneling High Electron Mobility Transistor." In ESSDERC ’89, 271–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_56.

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Ravaioli, U., and D. K. Ferry. "Monte Carlo Investigation of the High Electron Mobility Transistor." In High-Speed Electronics, 136–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_26.

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Mohapatra, Meryleen, Nutan Shukla, and A. K. Panda. "Ultra high-Speed InAlAs/InGaAs High Electron Mobility Transistor." In Advances in Intelligent Systems and Computing, 535–43. New Delhi: Springer India, 2014. http://dx.doi.org/10.1007/978-81-322-2012-1_57.

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Dubey, Shashank Kumar, and Aminul Islam. "Indium Phosphide Based Dual Gate High Electron Mobility Transistor." In Lecture Notes in Electrical Engineering, 255–64. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5089-8_24.

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Ranjan, Neelesh, Shashank Kumar Dubey, and Aminul Islam. "Study of High Electron Mobility Transistor for Biological Sensors." In Advances in Energy and Control Systems, 249–60. Singapore: Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-0154-4_19.

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Gaska, R., M. S. Shur, and A. Khan. "AlGaN/GaN High Electron Mobility Transistors." In III-V Nitride Semiconductors, 193–269. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-5.

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Xia, Jiang, Yang Ruixia, Zhao Zhengping, Zhang Zhiguo, and Feng Zhihong. "Large Signal Model of AlGaN/GaN High Electron Mobility Transistor." In Communications in Computer and Information Science, 544–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23223-7_70.

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Chaudhuri, Reet. "AlN/GaN/AlN High Electron Mobility Transistors." In Springer Theses, 155–92. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-17199-4_5.

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Wolny, M., P. Chambery, A. Briere, and J. P. Andre. "Low Noise High Electron Mobility Transistors Grown By MOVPE." In High-Speed Electronics, 148–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_29.

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Conference papers on the topic "High electron mobility transistor"

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Lin, Y. S., and S. K. Liang. "Improved AlGaAs/InGaAs high-electron mobility transistor." In 2011 International Conference on Electronics, Communications and Control (ICECC). IEEE, 2011. http://dx.doi.org/10.1109/icecc.2011.6067595.

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Yemtsev, P. A., I. K. Sunduchkov, B. N. Shelkovnikov, and K. S. Sunduchkov. "Nonlinear model of high electron mobility transistor." In 2003 13th International Crimean Conference 'Microwave and Telecommunication Technology' Conference Proceedings. IEEE, 2003. http://dx.doi.org/10.1109/crmico.2003.158800.

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Yemtsev, P. A., I. K. Sunduchkov, K. S. Sunduchkov, and B. N. Shelkovnikov. "High electron mobility transistor small signal model." In 2004 14th International Crimean Conference "Microwave and Telecommunication Technology". IEEE, 2004. http://dx.doi.org/10.1109/crmico.2004.183145.

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Klein, Brianna, Andrew Allerman, Albert Baca, Christopher Nordquist, Andrew Armstrong, Michael Van Heukelom, Anthony Rice, et al. "AlGaN High Electron Mobility Transistor for High Temperature Logic." In Proposed for presentation at the HiTEN 2022, International Conference and Exhibition on High Temperature Electronics Network held July 18-20, 2022 in Oxford, United Kingdom. US DOE, 2022. http://dx.doi.org/10.2172/2003976.

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Panda, Sangita R., Sudhakar Das, Arttatran Sahu, Ajit Kumar Panda, and Trinath Sahu. "Nonmonotonous Electron Mobility in Double Quantum Well Pseudomorphic High Electron Mobility Transistor Structure." In 2019 Devices for Integrated Circuit (DevIC). IEEE, 2019. http://dx.doi.org/10.1109/devic.2019.8783894.

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Heinz, Felix, Dirk Schwantuschke, Arnulf Leuther, and Oliver Ambacher. "Highly Scalable Distributed High Electron Mobility Transistor Model." In 2019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE, 2019. http://dx.doi.org/10.1109/apmc46564.2019.9038318.

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Kumar, Saurav, Vikash Kumar, and Aminul Islam. "Characterisation of field plated high electron mobility transistor." In 2016 International Conference on Microelectronics, Computing and Communications (MicroCom). IEEE, 2016. http://dx.doi.org/10.1109/microcom.2016.7522455.

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Hasan, Md Tanvir, Md Monibor Rahman, A. N. M. Shamsuzzaman, Md Sherajul Islam, and Ashraful G. Bhuiyan. "InN-based dual channel high electron mobility transistor." In 2008 International Conference on Electrical and Computer Engineering. IEEE, 2008. http://dx.doi.org/10.1109/icece.2008.4769250.

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Tayel, M. B., and S. A. Rashed. "Characterization of high electron mobility transistor under different temperatures." In Proceedings of the Twentieth National Radio Science Conference (NRSC'2003). IEEE, 2003. http://dx.doi.org/10.1109/nrsc.2003.157357.

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Miao, Xin, and Xiuling Li. "Towards planar GaAs nanowire array high electron mobility transistor." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994442.

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Reports on the topic "High electron mobility transistor"

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Mishra, Umesh. Fabrication of AlGaN-GaN-InN High Electron Mobility Transistors. Fort Belvoir, VA: Defense Technical Information Center, July 2003. http://dx.doi.org/10.21236/ada416411.

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Tompkins, Randy P., and Danh Nguyen. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada618164.

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Roberts, Adam T., and Henry O. Everitt. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada614121.

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Harvard, Ekaterina, Richard Brown, and James R. Shealy. Performance of AlGaN/GaN High Electron Mobility Transistors with AlSiN Passivation. Fort Belvoir, VA: Defense Technical Information Center, March 2010. http://dx.doi.org/10.21236/ada516658.

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Shah, Pankaj B., and Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Fort Belvoir, VA: Defense Technical Information Center, December 2011. http://dx.doi.org/10.21236/ada554911.

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Heller, Eric R., Donald Dorsey, Jason P. Jones, Samuel Graham, Matthew R. Rosenberger, William P. King, and Rama Vetury. Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint). Fort Belvoir, VA: Defense Technical Information Center, February 2014. http://dx.doi.org/10.21236/ada614007.

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Joshi, Ravindra P. Monte Carlo Transport Studies of GaN High Electron Mobility Transistors (HEMTs) for Microwave Applications. Fort Belvoir, VA: Defense Technical Information Center, March 2004. http://dx.doi.org/10.21236/ada421515.

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Nochetto, Horacio C., Nicholas R. Jankowski, Brian Morgan, and Avram Bar-Cohen. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. Fort Belvoir, VA: Defense Technical Information Center, October 2012. http://dx.doi.org/10.21236/ada570599.

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Huebschman, Benjamin, and Pankaj B. Shah. A Numerical Technique for Removing Residual Gate-Source Capacitances When Extracting Parasitic Inductance for GaN High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, March 2011. http://dx.doi.org/10.21236/ada539647.

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Warburton, Paul. High-Mobility Two-Dimensional Electron Gases at ZnO/ZnMgO Interfaces for Ultra-Fast Electronics Applications. Fort Belvoir, VA: Defense Technical Information Center, November 2014. http://dx.doi.org/10.21236/ada626925.

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