Log in

Relevant bibliographies by topics / High electron mobility transistor / Books

To see the other types of publications on this topic, follow the link: High electron mobility transistor.

Books on the topic 'High electron mobility transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 July 2024

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 29 books for your research on the topic 'High electron mobility transistor.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse books on a wide variety of disciplines and organise your bibliography correctly.

1

Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2003.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

2

Paul, Horowitz. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

Paul, Horowitz. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

4

United States. National Aeronautics and Space Administration., ed. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

5

Paul, Horowitz. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

6

United States. National Aeronautics and Space Administration., ed. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

7

United States. National Aeronautics and Space Administration., ed. Wide-bandwidth high-resolution search for extraterrestrial intelligence: Semiannual status report 15 June 1993 - 15 Dec 1993. Cambridge, MA: Harvard University, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

8

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

9

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

10

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

11

Hellings, Geert. High Mobility and Quantum Well Transistors: Design and TCAD Simulation. Dordrecht: Springer Netherlands, 2013.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

12

Corvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

13

Corvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

14

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

15

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

16

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2020.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

17

Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

18

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

19

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

20

Ture, Erdin. Gan-Based Tri-Gate High Electron Mobility Transistors. Fraunhofer IRB Verlag, 2018.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

21

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor. Storming Media, 2002.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

22

Haupt, Christian, Fraunhofer IAF, and Oliver Ambacher. AlGaN/GaN-Based Millimeter-Wave High Electron Mobility Transistors. Fraunhofer IRB Verlag, 2011.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

23

Mukherjee, Shrijit. Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors. Dissertation Discovery Company, 2019.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

24

Mukherjee, Shrijit. Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors. Creative Media Partners, LLC, 2019.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

25

National Aeronautics and Space Administration (NASA) Staff. Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts). Independently Published, 2018.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

26

Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

27

Hellings, Geert, and Kristin De Meyer. High Mobility and Quantum Well Transistors: Design and TCAD Simulation. Springer, 2013.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

28

Hellings, Geert, and Kristin De Meyer. High Mobility and Quantum Well Transistors: Design and TCAD Simulation. Springer Netherlands, 2015.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

29

Horing, Norman J. Morgenstern. Graphene. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198791942.003.0012.

Full text

Abstract:

Chapter 12 introduces Graphene, which is a two-dimensional “Dirac-like” material in the sense that its energy spectrum resembles that of a relativistic electron/positron (hole) described by the Dirac equation (having zero mass in this case). Its device-friendly properties of high electron mobility and excellent sensitivity as a sensor have attracted a huge world-wide research effort since its discovery about ten years ago. Here, the associated retarded Graphene Green’s function is treated and the dynamic, non-local dielectric function is discussed in the degenerate limit. The effects of a quantizing magnetic field on the Green’s function of a Graphene sheet and on its energy spectrum are derived in detail: Also the magnetic-field Green’s function and energy spectrum of a Graphene sheet with a quantum dot (modelled by a 2D Dirac delta-function potential) are thoroughly examined. Furthermore, Chapter 12 similarly addresses the problem of a Graphene anti-dot lattice in a magnetic field, discussing the Green’s function for propagation along the lattice axis, with a formulation of the associated eigen-energy dispersion relation. Finally, magnetic Landau quantization effects on the statistical thermodynamics of Graphene, including its Free Energy and magnetic moment, are also treated in Chapter 12 and are seen to exhibit magnetic oscillatory features.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!