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Journal articles on the topic 'High electron mobility transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 July 2024

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1

Amar, Abdelhamid, Bouchaïb Radi, and Hami El Abdelkhalak. "Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)." Applied Sciences 11, no. 22 (November 13, 2021): 10720. http://dx.doi.org/10.3390/app112210720.

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The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.

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2

Mimura, Takashi. "Development of High Electron Mobility Transistor." Japanese Journal of Applied Physics 44, no. 12 (December 8, 2005): 8263–68. http://dx.doi.org/10.1143/jjap.44.8263.

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3

Volcheck V. S., Lovshenko I. Yu., and Stempitsky V. R. "Design optimization of the gallium nitride high electron mobility transistor with graphene and boron nitride heat-spreading elements." Semiconductors 57, no. 3 (2023): 216. http://dx.doi.org/10.21883/sc.2023.03.56239.4732.

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The self-heating effect has long been a persistent issue for high electron mobility transistors based on gallium nitride due to their inherently poor heat dissipation capability. Although a wide variety of thermal management solutions has to date been proposed, the problem of the extremely non-uniform heat dissipation at the micrometer scale is still challenging. It has recently been demonstrated, however, that the performance of gallium nitride high electron mobility transistors can be substantially improved by the introduction of various heat-spreading elements based on graphene, boron nitride or diamond. In this paper, using numerical simulation, we carried out a design optimization procedure for a normally-off gallium nitride high electron mobility transistor containing both graphene and cubic boron nitride layers. First, a screening experiment based on a very economical Plackett-Burman design was performed in order to find the most critical geometric parameters that influence the dc characteristics. After that, a full two-level factorial experiment consisting of three factors was implemented and an optimized parameter set was yielded. By applying this set, the output power was increased by 11.35%. The combination of the most significant parameters does not include any factors related to the heat-spreading layers. Keywords: gallium nitride, high electron mobility transistor, optimization, Plackett-Burman design, screening experiment, self-heating.

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4

Djamdji, F., and R. Blunt. "Hall mobility profiling in high electron mobility transistor structures." Materials Science and Engineering: B 20, no. 1-2 (June 1993): 77–81. http://dx.doi.org/10.1016/0921-5107(93)90401-8.

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5

Win, Pascal, Yves Druelle, Yvon Cordier, Didier Adam, Jacques Favre, and Alain Cappy. "High-PerformanceIn0.3Ga0.7As/In0.29Al0.71As/GaAsMetamorphic High-Electron-Mobility Transistor." Japanese Journal of Applied Physics 33, Part 1, No. 6A (June 15, 1994): 3343–47. http://dx.doi.org/10.1143/jjap.33.3343.

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6

Đorđević, Vladica, Zlatica Marinković, and Olivera Pronić-Rančić. "COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS." Facta Universitatis, Series: Automatic Control and Robotics 16, no. 2 (October 24, 2017): 117. http://dx.doi.org/10.22190/fuacr1702119d.

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The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.

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7

Wojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, et al. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts." Micromachines 9, no. 11 (October 25, 2018): 546. http://dx.doi.org/10.3390/mi9110546.

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AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

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8

Anand, M. B., P. K. Ghosh, P. G. Kornreich, and D. J. Nicholson. "A traveling-wave high electron mobility transistor." IEEE Transactions on Microwave Theory and Techniques 41, no. 4 (April 1993): 624–31. http://dx.doi.org/10.1109/22.231656.

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9

Baca, Albert G., Andrew M. Armstrong, Andrew A. Allerman, Erica A. Douglas, Carlos A. Sanchez, Michael P. King, Michael E. Coltrin, Torben R. Fortune, and Robert J. Kaplar. "An AlN/Al0.85Ga0.15N high electron mobility transistor." Applied Physics Letters 109, no. 3 (July 18, 2016): 033509. http://dx.doi.org/10.1063/1.4959179.

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10

Kornreich, Phillipp G., Lois Walsh, James Flattery, and Saliman Isa. "Proposed size-effect high-electron-mobility transistor." Solid-State Electronics 29, no. 4 (April 1986): 421–28. http://dx.doi.org/10.1016/0038-1101(86)90089-4.

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11

Amar, Abdelhamid, Bouchaïb Radi, and Abdelkhalak El Hami. "Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)." International Journal for Simulation and Multidisciplinary Design Optimization 13 (2022): 2. http://dx.doi.org/10.1051/smdo/2021035.

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The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled. This proposed modeling by the finite element method using the Comsol multiphysics software, allowed to study the multiphysics behaviour of the transistor and to observe the different degradations in the structure of the component. Then, an optimization study is necessary to avoid failures in the transistor. In this work, we have used the Covariance Matrix Adaptation-Evolution Strategy (CMA-ES) method to solve the optimization problem, but it requires a very important computing time. Therefore, we proposed the kriging assisted CMA-ES method (KA-CMA-ES), it is an integration of the kriging metamodel in the CMA-ES method, it allows us to solve the problem of optimization and overcome the constraint of calculation time. All these methods are well detailed in this paper. The coupling of the finite element model developed on Comsol Multiphysics and the KA-CMA-ES method on Matlab software, allowed to optimize the multiphysics behaviour of the transistors. We made a comparison between the results of the numerical simulations of the initial state and the optimal state of the component. It was found that the proposed KA-CMA-ES method is efficient in solving optimization problems.

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12

Klein, B. A., A. A. Allerman, A. G. Baca, C. D. Nordquist, A. M. Armstrong, M. Van Heukelom, A. Rice, et al. "AlGaN High Electron Mobility Transistor for High-Temperature Logic." Journal of Microelectronics and Electronic Packaging 20, no. 1 (2023): 1–8. http://dx.doi.org/10.4071/imaps.1832996.

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13

Novosyadlyy, S. P., and A. M. Bosats'kyy. "Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits." Фізика і хімія твердого тіла 16, no. 1 (March 15, 2015): 221–29. http://dx.doi.org/10.15330/pcss.16.1.221-229.

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Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and small size structures.These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits.In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speedof large integrated circuits structures.

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14

Subash, T. D., T. Gnanasekaran, and P. Deepthi Nair. "Analytical modeling of AlInSb/InSb MOS gate HEMT structure with improved performance." International Journal of Modeling, Simulation, and Scientific Computing 07, no. 03 (August 23, 2016): 1672001. http://dx.doi.org/10.1142/s1793962316720016.

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The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad simulation. As the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells, semiconductor cells and transistors. Special properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device [Pardeshi H., Pati S. K., Raj G., Mohankumar N., Sarkar C. K., J. Semicond. 33(12):124001-1–124001-7, 2012]. The maximum drain current density is achieved with improving the density of two-dimensional electron gas (2DEG) and with high velocity. High electron mobility transistor (HEMT) structure is used with the different combinations of layers which have different bandgaps. Parameters such as electron mobility, bandgap, dielectric constant, etc., are considered differently for each layer [Zhang A., Zhang L., Tang Z., IEEE Trans. Electron Devices 61(3):755–761, 2014]. The high electron mobility electrons are now widely used in so many applications. The proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.

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15

Ohmi, Shun-ichiro, Eisuke Tokumitsu, and Hiroshi Ishiwara. "Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures." Japanese Journal of Applied Physics 34, Part 2, No. 5B (May 15, 1995): L603—L605. http://dx.doi.org/10.1143/jjap.34.l603.

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16

Sydor, M., J. R. Engholm, M. O. Manasreh, K. R. Evans, C. E. Stutz, and W. C. Mitchel. "Indirect photoreflectance from high-electron-mobility transistor structures." Physical Review B 45, no. 23 (June 15, 1992): 13796–98. http://dx.doi.org/10.1103/physrevb.45.13796.

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17

Ishii, Masami, Kazuhiko Matsumoto, Hidehiro Morozumi, Yoshinobu Sugiyama, and Tsunenori Sakamoto. "V-Shaped Gate High Electron Mobility Transistor (VHEMT)." Japanese Journal of Applied Physics 32, Part 2, No.1A/B (January 15, 1993): L36—L38. http://dx.doi.org/10.1143/jjap.32.l36.

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18

Sutrisno, S. "Microwave amplifier design using high mobility electron transistor." IOP Conference Series: Materials Science and Engineering 830 (May 19, 2020): 032031. http://dx.doi.org/10.1088/1757-899x/830/3/032031.

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19

BERSUKER, GENNADI, BYOUNG HUN LEE, and HOWARD R. HUFF. "Novel Dielectric Materials for Future Transistor Generations." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 221–39. http://dx.doi.org/10.1142/s012915640600362x.

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Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k transistors. The quality of the SiO 2-like layer at the high-k/ Si substrate interface, as well as dielectric interaction with the gate electrode, may significantly affect device characteristics.

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20

SAKOWICZ, M., J. ŁUSAKOWSKI, K. KARPIERZ, M. GRYNBERG, and G. VALUSIS. "HIGH MAGNETIC FIELD IN THz PLASMA WAVE DETECTION BY HIGH ELECTRON MOBILITY TRANSISTORS." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 3029–34. http://dx.doi.org/10.1142/s0217979209062761.

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The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs / AlGaAs and GaN / AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative d S/ d UGS. Shubnikov - de-Haas oscillations (SdHO) of both S and d S/ d UGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and d S/ d UGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs / GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

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21

Jiang, Lilai, Chengzhen Song, Yu-Ning Wu, and Shiyou Chen. "Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation." AIP Advances 13, no. 4 (April 1, 2023): 045008. http://dx.doi.org/10.1063/5.0150381.

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In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron mobility transistor (MISHEMT), were studied to investigate the degradation mechanism after proton irradiation. The vacancies produced by proton irradiation, especially Ga vacancy (VGa), are found to be responsible for the device degradation by carrier removal and mobility degradation, which directly influence the saturation drain current and maximum transconductance of AlGaN/GaN-based devices. Furthermore, AlGaN/GaN HEMTs with gate dielectrics (Al2O3, SiNx) exhibit better irradiation resistance than traditional AlGaN/GaN HEMTs, which produce fewer vacancies at the channel after proton irradiation. Al2O3 MOSHEMTs also show better performance than SiNx MISHEMTs in resisting proton damage. Therefore, a high-quality dielectric layer is a key factor to improve the reliability of AlGaN/GaN-based devices after proton irradiation.

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22

Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, and Fang Jin-Yong. "High power microwave damage mechanism on high electron mobility transistor." Acta Physica Sinica 65, no. 16 (2016): 168501. http://dx.doi.org/10.7498/aps.65.168501.

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23

Alleva, Vincenzo, Andrea Bettidi, Walter Ciccognani, Marco De Dominicis, Mauro Ferrari, Claudio Lanzieri, Ernesto Limiti, and Marco Peroni. "High-power monolithic AlGaN/GaN high electron mobility transistor switches." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 19, 2009): 339–45. http://dx.doi.org/10.1017/s1759078709990183.

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This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

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24

Roccaforte, Fabrizio, Giuseppe Greco, Patrick Fiorenza, and Ferdinando Iucolano. "An Overview of Normally-Off GaN-Based High Electron Mobility Transistors." Materials 12, no. 10 (May 15, 2019): 1599. http://dx.doi.org/10.3390/ma12101599.

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Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

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25

Ding, Xiangzhen, Shuai Yang, Bin Miao, Le Gu, Zhiqi Gu, Jian Zhang, Baojun Wu, Hong Wang, Dongmin Wu, and Jiadong Li. "Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection." Analyst 143, no. 12 (2018): 2784–89. http://dx.doi.org/10.1039/c8an00032h.

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26

Hiyamizu, S. "High electron mobility transistors." Surface Science Letters 170, no. 1-2 (April 1986): A261. http://dx.doi.org/10.1016/0167-2584(86)90635-3.

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27

Hiyamizu, S. "High electron mobility transistors." Surface Science 170, no. 1-2 (April 1986): 727–41. http://dx.doi.org/10.1016/0039-6028(86)91046-0.

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28

Subramanian, S. "High electron mobility transistors." Bulletin of Materials Science 13, no. 1-2 (March 1990): 121–33. http://dx.doi.org/10.1007/bf02744866.

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29

Chang, Jui-Fen, and Jia-Min Yu. "High-Performance Vertical Light-Emitting Transistors Based on ZnO Transistor/Quantum-Dot Light-Emitting Diode Integration and Electron Injection Layer Modification." Micromachines 14, no. 10 (October 15, 2023): 1933. http://dx.doi.org/10.3390/mi14101933.

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Vertical light-emitting transistors (VLETs) consisting of vertically stacked unipolar transistors and organic light-emitting diodes (OLEDs) have been proposed as a prospective building block for display technologies. In addition to OLEDs, quantum-dot (QD) LEDs (QLEDs) with high brightness and high color purity have also become attractive light-emitting devices for display applications. However, few studies have attempted to integrate QLEDs into VLETs, as this not only involves technical issues such as compatible solution process of QDs and fine patterning of electrodes in multilayer stacked geometries but also requires a high driving current that is demanding on transistor design. Here we show that these integration issues of QLEDs can be addressed by using inorganic transistors with robust processability and high mobility, such as the studied ZnO transistor, which facilitates simple fabrication of QD VLETs (QVLETs) with efficient emission in the patterned channel area, suitable for high-resolution display applications. We perform a detailed optimization of QVLET by modifying ZnO:polyethylenimine nanocomposite as the electron injection layer (EIL) between the integrated ZnO transistor/QLED, and achieve the highest external quantum efficiency of ~3% and uniform emission in the patterned transistor channel. Furthermore, combined with a systematic study of corresponding QLEDs, electron-only diodes, and electroluminescence images, we provide a deeper understanding of the effect of EIL modification on current balance and distribution, and thus on QVLET performance.

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30

Chen, Dingbo, Zhikun Liu, Jinghan Liang, Lijun Wan, Zhuoliang Xie, and Guoqiang Li. "A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage." Journal of Materials Chemistry C 7, no. 39 (2019): 12075–79. http://dx.doi.org/10.1039/c9tc03718g.

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31

Gromov, Dmitry, and Vadim Elesin. "Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation." ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.

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The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.

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32

Gregušová, Dagmar, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera, and Róbert Kúdela. "GaAs Nanomembranes in the High Electron Mobility Transistor Technology." Materials 14, no. 13 (June 22, 2021): 3461. http://dx.doi.org/10.3390/ma14133461.

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A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: ~−1.5% and ~−0.15%. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current.

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33

Hikosaka, K., Y. Hirachi, T. Mimura, and M. Abe. "A microwave power double-heterojunction high electron mobility transistor." IEEE Electron Device Letters 6, no. 7 (July 1985): 341–43. http://dx.doi.org/10.1109/edl.1985.26148.

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34

Deng, Yanqing, Roland Kersting, Jingzhou Xu, Ricardo Ascazubi, Xi-Cheng Zhang, Michael S. Shur, Remis Gaska, Grigory S. Simin, M. Asif Khan, and Victor Ryzhii. "Millimeter wave emission from GaN high electron mobility transistor." Applied Physics Letters 84, no. 1 (January 5, 2004): 70–72. http://dx.doi.org/10.1063/1.1638625.

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35

Yeager, H. R., and R. W. Dutton. "Circuit simulation models for the high electron mobility transistor." IEEE Transactions on Electron Devices 33, no. 5 (May 1986): 682–92. http://dx.doi.org/10.1109/t-ed.1986.22552.

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36

Chang, Chian‐Sern, Harold R. Fetterman, and Arold Green. "Cyclotron resonance measurements of the high electron mobility transistor." Applied Physics Letters 56, no. 1 (January 1990): 57–59. http://dx.doi.org/10.1063/1.103184.

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37

Tripathi, Ball Mukund Mani, and Shyama Prasad Das. "Double aperture double-gate vertical high-electron-mobility transistor." Journal of Computational Electronics 16, no. 1 (December 15, 2016): 39–46. http://dx.doi.org/10.1007/s10825-016-0939-6.

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38

Tinkham, B. P., B. R. Bennett, R. Magno, B. V. Shanabrook, and J. B. Boos. "Growth of InAsSb-channel high electron mobility transistor structures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, no. 4 (2005): 1441. http://dx.doi.org/10.1116/1.1941147.

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39

Jiang, Chunyan, Ting Liu, Chunhua Du, Xin Huang, Mengmeng Liu, Zhenfu Zhao, Linxuan Li, et al. "Piezotronic effect tuned AlGaN/GaN high electron mobility transistor." Nanotechnology 28, no. 45 (October 17, 2017): 455203. http://dx.doi.org/10.1088/1361-6528/aa8a5a.

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40

Jansen, Philippe, N. Maene, Walter De Raedt, S. Naten, D. Stubbe, Wim Schoenmaker, M. Van Rossum, and K. De Meyer. "AlGaAs/GaAs: High electron mobility transistor simulations with PRISM." European Transactions on Telecommunications 1, no. 4 (July 1990): 433–37. http://dx.doi.org/10.1002/ett.4460010411.

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41

Amar, Abdelhamid, Rabii El Maani, Bouchaïb Radi, and Abdelkhalak El Hami. "Multi-objective optimization of the high electron mobility transistor." International Journal for Simulation and Multidisciplinary Design Optimization 14 (2023): 16. http://dx.doi.org/10.1051/smdo/2023007.

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In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems. The first one is the optimization of the thermal behavior of the HEMT, through the optimization of its maximum operating temperature which influences the electrical characteristics such as electron mobility, and also influences the mechanical behavior of its structure. While the second problem will be the optimization of the mechanical behavior of the same technology, through the optimization of the stresses distribution that also influence the electrical characteristics and reliability of the HEMT structure. The resolution of these two optimization problems will be done, by the multi-objective optimization approach thanks to numerical tools such as Comsol multiphysics and Matlab software, which allows to solve these two problems simultaneously by taking into consideration the imposed constraints. The results obtained have optimized the thermo-mechanical behavior of the HEMT, which proves the efficiency of this approach to solve complex optimization problems.

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CHOI, S. G. "Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor." IEICE Transactions on Electronics E89-C, no. 5 (May 1, 2006): 616–21. http://dx.doi.org/10.1093/ietele/e89-c.5.616.

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Fu, Li-Hua, Hai Lu, Dun-Jun Chen, Rong Zhang, You-Dou Zheng, Ke Wei, and Xin-Yu Liu. "High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor." Chinese Physics B 21, no. 10 (October 2012): 108503. http://dx.doi.org/10.1088/1674-1056/21/10/108503.

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Volcheck, V. S., and V. R. Stempitsky. "Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor." Doklady BGUIR 18, no. 8 (December 27, 2020): 62–68. http://dx.doi.org/10.35596/1729-7648-2020-18-8-62-68.

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A significant rise in the mass production of products that contain nanoparticles is of growing concern due to the detection of their toxic effects on living organisms. The standard method for analyzing the toxicity of substances, including nanomaterials, is toxicological testing, which requires the substantial consumption of time and material resources. An alternative approach is to develop models that predict the effect of nanomaterials on biological systems. In both cases, for the detection of nanoparticles an effective electronic complex consisting of a sensor with high sensitivity and a data reception/processing/transmission system is necessary. In recent times, fundamental and applied research activities aimed at the application of heterostructure field-effect transistors – high electron mobility transistors–as a base for such sensors have been undertaken. The purpose of this work is to develop a technique for modeling a sensor for toxic nanoparticles based on the heterostructure field-effect transistor. The object of the research is a gallium nitride high electron mobility transistor device structure. The subject of the research is the electrical characteristics of the transistor obtained in static mode. The calculation results show that the dependence between the concentration of the toxic nanoparticles in the test medium and the polarization charge surface density could serve as a base for modeling the sensor for toxic nanoparticles based on the heterostructure field-effect transistor. The primary advantage of the proposed technique is the use of the scaling parameter intended directly for calibrating the polarization charge density in accordance with the two-dimensional electron gas concentration. The obtained results can be utilized by the electronics industry of the Republic of Belarus for developing the hardware components of gallium nitride high-frequency electronics.

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Kosaka, Hayato, Hiroki Iwata, Yudai Watariguchi, Riichiro Shirota, Yoshiteru Amemiya, Shinichiro Takatani, Tomoyuki Suwa, and Akinobu Teramoto. "GaN High Electron Mobility Transistor with Floating Gate for Accurate Threshold Voltage Control." ECS Meeting Abstracts MA2023-01, no. 32 (August 28, 2023): 1844. http://dx.doi.org/10.1149/ma2023-01321844mtgabs.

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Gallium nitride (GaN) high electron mobility transistors (HEMTs) have high electron mobility, high breakdown voltage, and low on-resistance, and are expected to operate as power devices. When GaN HEMTs are normally-on devices, drain current flow even for 0-gate-voltage. Thus, the normally-off operation is essentially required to the power devices from a fail-safe standpoint. Figure A shows a schematic of the structure, which is constructed with GaN HEMT including floating gate and the injection gate. The block oxide and tunnel oxide were formed between control gate and floating gate, and between injection gate and floating gate, respectively. It is impossible to inject electrons from the channel to the floating gate by the applying voltage to the substrate because AlGaN layer is located on the GaN layer. We introduced the injection gate for injecting electrons into the floating gate, and then the normally-off operation is obtained by the injecting electrons into the floating gate. The injecting electrons decrease the floating gate potential and form the depletion region under the gate oxide. Because the channel is the same as that of a conventional GaN HEMTs during on-operation, the high electron mobility of GaN HEMTs can be maintained, and then the on-operation behaviors are the same as conventional GaN HEMTs except threshold voltage. In this study, we demonstrate the normally-off operation of the fabricated GaN HEMTs with floating gate. Figure B shows the microscopy image of the fabricated device where the gate length, gate width and thickness of gate oxide are 2 μm, 110 μm and 20 nm, respectively. In floating gate device, the coupling ratio between the induced voltage of floating gate and the applied voltage of control gate is important. To increase the coupling ratio, we extended the overlap areas of floating gate and control gate to the drain side. The area of the control gate and the thickness of block oxide are set to be 3600 μm2 and 50 nm, respectively. Then, the coupling ratio becomes 91%, and then the induced voltage of floating gate is almost the same as the applied voltage of control gate. High-quality oxides are required in our devices for block oxide, tunnel oxide and gate oxide, however high-quality oxide films cannot be deposited by the thermal oxidation processes for GaN and polycrystalline Si. To form high-quality dielectric films, we used the microwave exited Plasma Enhanced Chemical Vapor Deposition (PECVD) [1][2][3]. The Id-Vcg characteristics before and after the electron injection into the floating gate are shown in figure C. To change the threshold voltage in positive value, the voltages of control gate and injection gate are determined for the electron injection. The threshold voltage before the electron injection is -10.7 V and the electron injection increases the threshold voltage, resulting in a positive threshold voltage of 3.2 V. This voltage is sufficiently high voltage for normally-off operation. The Id-Vd characteristics after electron injection are shown in the figure D. It is found that the electron mobility is 2100 cm2/Vs, which is the similar value of 1500~2250 cm2/Vs in the reported conventional GaN HEMT [4][5][6] and this indicates that the device can be maintained high electron mobility as same as the conventional GaN HEMT. We fabricated the GaN HEMTs with floating gate, which realize the normally-off and high electron mobility. The threshold voltage can be controlled to be 3.2 V and the electron mobility of 2100 cm2/Vs is achieved. It is indicated that normally-off GaN HEMT device with high electron mobility can be demonstrated. [1] T. Ohmi, et al., J. Phys. D: Appl. Phys., 39, p.R,2006. [2] H. Tanaka, et al., Jpn. J. Appl. Phys. 42, p. 1911, 2003. [3] H. Kambayashi, et al., Solid-State Electronics, 54, p. 660 [4] J.-T. Chen, et al., Appl. Phys. Lett. 106, 251601, 2015. [5] K. Shinohara et al., IEEE Trans. Electron Devices, 60, p. 2982, 2013. [6] X. Ding et al., CES Transaction on Electrical Machines and Systems, 3, p54. Figure 1

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Lukić, P. M., R. M. Ramović, and Rajko M. Šašić. "HEMT Carrier Mobility Analytical Model." Materials Science Forum 494 (September 2005): 43–48. http://dx.doi.org/10.4028/www.scientific.net/msf.494.43.

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In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.

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Paszkiewicz, Bartłomiej K., Bogdan Paszkiewicz, and Andrzej Dziedzic. "Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors." Electronics 13, no. 10 (May 9, 2024): 1840. http://dx.doi.org/10.3390/electronics13101840.

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Nitrides are the leading semiconductor material used for the fabrication of high electron mobility transistors (HEMTs). They exhibit piezoelectric properties, which, coupled with their high mechanical stiffness, expand their versatile applications into the fabrication of piezoelectric devices. Today, due to advances in device technology that result in a reduction in the size of individual transistor elements and due to increased structural complexity (e.g., multi-gate transistors), the integration of piezoelectric materials into HEMTs leads to an interesting occurrence, namely acoustic emission from the transistor gate due to piezoelectric effects. This could affect the device’s performance, reliability, and durability. However, this phenomenon has not yet been comprehensively described. This paper aims to examine this overlooked aspect of AlGaN/GaN HEMT operation, that is, the acoustic emission from the gate region of the device induced by piezoelectric effects. For this purpose, dedicated test structures were designed, consisting of two narrow 1.7 μm-wide metallization strips placed at distances ranging from 5 μm to 200 μm fabricated in AlGaN/GaN heterostructures to simulate and examine the gate behavior of the HEMT transistor. For comparison, the test device structures were also fabricated on sapphire, which is not a piezoelectric material. Measurements of acoustic and electrical interactions in the microwave range were carried out using the “on wafer” method with Picoprobe’s signal–ground–signal (SGS)-type microwave probes. The dependence of reflectance |S11| and transmittance |S21| vs. frequency was investigated, and the coupling capacitance was determined. An equivalent circuit model of the test structure was developed, and finite element method simulation was performed to study the distribution of the acoustic wave in the nitride layers and substrate for different frequencies using Comsol Multiphysics software. At frequencies up to 2–3 GHz, the formation of volume waves and a surface wave, capable of propagating over long distances (in the order of tens of micrometers) was observed. At higher frequencies, the resulting distribution of displacements as a result of numerous reflections and interferences was more complicated. However, there was always the possibility of a surface wave occurrence, even at large distances from the excitation source. At small gate distances, electrical interactions dominate. Above 100 µm, electrical interactions are comparable to acoustic ones. With further increases in distance, weakly attenuated surface waves will dominate.

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Tokuchi, Shigeki, Ryo Shiranita, Kyosuke Teramura, and Mamoru Furuta. "8‐4: Oxide Semiconductor In‐Zn‐O‐X system with High Electron Mobility." SID Symposium Digest of Technical Papers 54, no. 1 (June 2023): 85–88. http://dx.doi.org/10.1002/sdtp.16494.

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We proposed high mobility In‐Zn‐O‐X system, in which X is added to control carrier density. Choosing favorable X additives and optimizing the composition are keys to achieve high mobility. We have demonstrated Thin‐Film Transistor with its mobility over 60 cm2/Vs, and that would be useful for high‐definition display.

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Sheng, N. H., H. T. Wang, C. P. Lee, G. J. Sullivan, and D. L. Miller. "A high-speed 1-kbit high electron mobility transistor static RAM." IEEE Transactions on Electron Devices 34, no. 8 (August 1987): 1670–75. http://dx.doi.org/10.1109/t-ed.1987.23135.

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Ding, Xiangzhen, Bin Miao, Zhiqi Gu, Baojun Wu, Yimin Hu, Hong Wang, Jian Zhang, Dongmin Wu, Wenhui Lu, and Jiadong Li. "Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications." RSC Advances 7, no. 88 (2017): 55835–38. http://dx.doi.org/10.1039/c7ra10028k.

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