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Relevant bibliographies by topics / High-k dielectric

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Academic literature on the topic 'High-k dielectric'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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Journal articles on the topic "High-k dielectric"

1

Susarla, Sandhya, Thierry Tsafack, Peter Samora Owuor, et al. "High-K dielectric sulfur-selenium alloys." Science Advances 5, no. 5 (2019): eaau9785. http://dx.doi.org/10.1126/sciadv.aau9785.

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Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of estab

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Singh, Rajenda, and Richard K. Ulrich. "High and Low Dielectric Constant Materials." Electrochemical Society Interface 8, no. 2 (1999): 26–30. http://dx.doi.org/10.1149/2.f06992if.

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Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reporte

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Lo, Wai, Arvind Kamath, Shreyas Kher, Craig Metzner, Jianguo Wen, and Zhihao Chen. "Deposition and characterization of HfO2 high k dielectric films." Journal of Materials Research 19, no. 6 (2004): 1775–82. http://dx.doi.org/10.1557/jmr.2004.0247.

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As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their higher k values (e.g., 15–50) raise the physical thickness of the dielectrics that provide similar equivalent thickness of a thinner SiO2 film. In order for the high k materials to be applicable in CMOS devices, there should exist deposition technologies that can deposit highly uniform films over Si wafers

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Lu, Feng Ming, Jiang Shao, Xiao Yu Liu, and Xing Hao Wang. "Research on TDDB Effect in High-k Materials." Advanced Materials Research 548 (July 2012): 203–8. http://dx.doi.org/10.4028/www.scientific.net/amr.548.203.

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With continual scaling of ICs, the thickness of gate oxide becomes thinner and thinner which affects the reliability of semiconductor device greatly. The mechanism of time-dependent dielectric breakdown (TDDB) was analyzed. Six mathematical models of TDDB which were divided according to the position of defects and the physical property of charged particles were discussed. Then the dielectric breakdown characteristic of high k dielectrics and the relationships between the breakdown electric field, field acceleration parameter and dielectric constant were analyzed in detail. Finally, the relatio

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Misra, Durga. "Advancing Science and Technology of High-k Dielectric at ECS." ECS Meeting Abstracts MA2022-01, no. 18 (2022): 1039. http://dx.doi.org/10.1149/ma2022-01181039mtgabs.

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Historically SiO2 was the main driver as the transistor gate dielectric in CMOS technology. Once the thickness of SiO2 reached the onset of direct tunneling region (<1.5 nm) HfO2 -based high-k insulators were introduced to suppress the direct-tunneling leakage current. ECS started a symposium on Physics and Technology of High-k Gate Dielectrics in 2002 describing the evolution of dielectric science in nanoelectronics. In recent years transistor has transformed from a planar device to a three-dimensional device to a gate all around device. The electrical performance in these devices depends

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You, Yong, Chenhao Zhan, Ling Tu, et al. "Polyarylene Ether Nitrile-Based High-k Composites for Dielectric Applications." International Journal of Polymer Science 2018 (July 10, 2018): 1–15. http://dx.doi.org/10.1155/2018/5161908.

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Flexible polymer-based composites exhibiting high dielectric constant as well as low dielectric loss have been intensively investigated for their potential utilization in electronics and electricity industry and energy storage. Resulting from the polar -CN on the side chain, polyarylene ether nitrile (PEN) shows relatively high dielectric constant which has been extensively investigated as one of the hot spots as dielectric materials. However, the dielectric constant of PEN is still much lower than the ceramic dielectrics such as BaTiO3, TiO2, and Al2O3. In this review, recent and in-progress

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Lee, Byoung Hun, and Rino Choi. "Dielectric Breakdown Characteristics of Stacked High-k Dielectrics." ECS Transactions 19, no. 2 (2019): 289–99. http://dx.doi.org/10.1149/1.3122097.

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BERSUKER, GENNADI, BYOUNG HUN LEE, and HOWARD R. HUFF. "Novel Dielectric Materials for Future Transistor Generations." International Journal of High Speed Electronics and Systems 16, no. 01 (2006): 221–39. http://dx.doi.org/10.1142/s012915640600362x.

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Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k

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Hall, Stephe, Octavian Buiu, Ivona Z. Mitrovic, Yi Lu, and William M. Davey. "Review and perspective of high-k dielectrics on silicon." Journal of Telecommunications and Information Technology, no. 2 (June 25, 2023): 33–43. http://dx.doi.org/10.26636/jtit.2007.2.806.

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The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics, which are compounded by electron trapping phenomena in the microsecond regime. Nearly all practical methods of preparation result in a thin interfacial layer generally of the form SiOx or a mixed oxide between Si and the high-k so that the extraction of the dielectric constant is complicated and values must be qualified by error analysis. The dis

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Modes, Christina, Stefan Malkmus, and Frieder Gora. "High K Low Loss Dielectrics Co-Fireable with LTCC." Active and Passive Electronic Components 25, no. 2 (2002): 141–45. http://dx.doi.org/10.1080/08827510212346.

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Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way. Heraeus has implemented compatible high permitivity and low loss dielectrics with NPO performance into modified Heraeus CT700 low temperature co-fired ceramic tape system. The majority of commercially available microwave dielectrics show increasing firing temperatures>200 °Cwhich make them incompatible with Ag metallizations or show high die

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Dissertations / Theses on the topic "High-k dielectric"

1

Hung, Ting-Hsiang. "Novel High-k Dielectric Enhanced III-Nitride Devices." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419.

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Sun, Xiao. "Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors." Thesis, Yale University, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3578458.

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<p> As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology.</p><p> In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well

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Cicerrella, Elizabeth. "Dielectric functions and optical bandgaps of high-K dielectrics by far ultraviolet spectroscopic ellipsometry /." Full text open access at:, 2006. http://content.ohsu.edu/u?/etd,2.

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Galassi, Fabio. "Fabrication of high-k dielectric thin films for spintronics." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10449/.

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Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del cara

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Tewg, Jun-Yen. "Zirconium-doped tantalum oxide high-k gate dielectric films." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/1346.

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A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant mat

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Lancaster, Janet. "Organic MIS Devices Based on a High-k Dielectric." Thesis, Bangor University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520852.

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Khan, Md Ziaur Rahman Khan. "Sol-gel based high-k dielectric field effect transistors." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611429.

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Jeon, Yongjoo. "High-k gate dielectric for 100 nm MOSFET application /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004296.

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Raghu, Prashant. "Interaction of molecular contaminants with high-k dielectric surfaces." Diss., The University of Arizona, 2003. http://hdl.handle.net/10150/280445.

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As the device feature size shrinks, films of silicon oxide (SiO₂) will become unsuitable for MOSFET gate dielectric applications and have to be replaced by thicker films of a high-k dielectric material. Among the high-k materials, hafnium oxide (HfO₂) and zirconium oxide (ZrO₂) are the most promising candidates. Molecular contamination can affect the quality of the new gate dielectric films in a manner similar to ultrathin SiO2 films. Therefore, characterization of contaminant adsorption behavior of these high-k films should assist in deciding their potential for successful integration in sili

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Luo, Wen. "Reliability characterization and prediction of high k dielectric thin film." Texas A&M University, 2004. http://hdl.handle.net/1969.1/3225.

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As technologies continue advancing, semiconductor devices with dimensions in nanometers have entered all spheres of human life. This research deals with both the statistical aspect of reliability and some electrical aspect of reliability characterization. As an example of nano devices, TaO<sub>x</sub>-based high k dielectric thin ﬁlms are studied on the failure mode identiﬁcation, accelerated life testing, lifetime projection, and failure rate estimation. Experiment and analysis on dielectric relaxation and transient current show that the relaxation current of high k dielectrics

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Books on the topic "High-k dielectric"

1

Gusev, Evgeni, ed. Defects in High-k Gate Dielectric Stacks. Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4367-8.

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Michel, Houssa, ed. High-K gate dielectrics. Institute of Physics, 2004.

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Yang, Kuo-Chang. Characterization of Gd2O3 high-K dielectric films on Si(001). National Library of Canada, 2000.

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Evgeni, Gusev, ed. Defects in high-k gate dielectric stacks: Nano-electronic semiconductor devices. Springer, 2006.

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International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (1st 2003 Salt Lake City, Utah). Physics and technology of high-k gate dielectrics I : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, Reliability, and Manufacturing Issues, held in Salt Lake City, Utah, October 20-24, 2002. Edited by Kar S. 1942-, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Electrochemical Society, 2003.

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6

Kim, Young-Hee, and Jack C. Lee. Hf-Based High-k Dielectrics. Springer International Publishing, 2005. http://dx.doi.org/10.1007/978-3-031-02552-5.

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Moharana, Srikanta, Santosh Kumar Satpathy, Tuan Anh Nguyen, Ram K. Gupta, and Parvej Ahmad Alvi. Metal Oxide-based High-K Dielectrics. CRC Press, 2025. https://doi.org/10.1201/9781003352365.

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8

He, Gang, and Zhaoqi Sun, eds. High-k Gate Dielectrics for CMOS Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527646340.

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International, Symposium on High Dielectric Constant Gate Stacks (4th 2006 Cancun Mexico). Physics and technology of high-k gate dielectrics 4. Electrochemical Society, 2006.

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International, Symposium on High Dielectric Constant Materials and Gate Stacks (5th 2007 Washington D. C. ). Physics and technology of high-k gate dielectrics 5. Electrochemical Society, 2007.

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Book chapters on the topic "High-k dielectric"

1

Maity, N. P., and Reshmi Maity. "Moore’s Law: In the 21st Century." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-1.

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Maity, N. P., and Reshmi Maity. "SiO2-Based MOS Devices: Leakage and Limitations." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-2.

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Harsha, P. Sri, K. Venkata Saravanan, and V. Madhurima. "High-k Dielectric Materials: Structural Properties and Selection." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-3.

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Maity, N. P., and Reshmi Maity. "Selection of High-k Dielectric Materials." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-4.

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Maity, N. P., and Reshmi Maity. "Tunneling Current Density and Tunnel Resistivity: Application to High-k Material HfO2." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-5.

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Maity, N. P., and Reshmi Maity. "Analysis of Interface Charge Density: Application to High-k Material Tantalum Pentoxide." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-6.

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Sahu, Partha Pratim. "High-k Material Processing in CMOS VLSI Technology." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-7.

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Baishya, Srimanta. "Tunnel FET: Working, Structure, and Modeling." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-8.

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Rai, D. P. "Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-9.

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Kar, Samares. "Introduction to High-k Gate Stacks." In High Permittivity Gate Dielectric Materials. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36535-5_1.

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Conference papers on the topic "High-k dielectric"

1

Drallmeier, Matthew, and Elyse Rosenbaum. "TDDB Characterization of High-k Gate Dielectric on a Sub-nanosecond Timescale." In 2025 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2025. https://doi.org/10.1109/irps48204.2025.10982801.

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"SESSION 11 - High k Dielectric Technology." In Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. IEEE, 2004. http://dx.doi.org/10.1109/vlsit.2004.1345419.

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Zhang, Zhenyu, Jiafei Yao, Yufeng Guo, et al. "Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench." In 2021 China Semiconductor Technology International Conference (CSTIC). IEEE, 2021. http://dx.doi.org/10.1109/cstic52283.2021.9461440.

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Okada, Kenji, Hiroyuki Ota, Toshihide Nabatame, and Akira Toriumi. "Dielectric Breakdown in High-K Gate Dielectrics - Mechanism and Lifetime Assessment." In 2007 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2007. http://dx.doi.org/10.1109/relphy.2007.369865.

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Sune, Jordi, Ermest Y. Wu, and S. Tous. "High-K dielectric stack percolation breakdown statistics." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667444.

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Papanasam, E., and Binsu J. Kailath. "Realization of silicon carbide MIS capacitors with high-K and high-K stack dielectric." In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021192.

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Jiongxin Lu, Kyoung-Sik Moon, and C. P. Wong. "High-k polymer nanocomposites for gate dielectric applications." In 2007 12th International Symposium on Advanced Packaging Materials: Processes, Properties, and Interfaces. IEEE, 2007. http://dx.doi.org/10.1109/isapm.2007.4419938.

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Horin, I. A., A. D. Krivospitsky, A. A. Orlikovsky, A. E. Rogozhin, and A. G. Vasiliev. "Silicide/high-k dielectric structures for nanotransistor gates." In SPIE Proceedings, edited by Kamil A. Valiev and Alexander A. Orlikovsky. SPIE, 2006. http://dx.doi.org/10.1117/12.677066.

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Rigante, S., P. Scarbolo, D. Bouvet, et al. "High-k dielectric FinFETs towards sensing integrated circuits." In 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013). IEEE, 2013. http://dx.doi.org/10.1109/ulis.2013.6523494.

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Ratzke, Markus, Mathias Kappa, Dirk Wolfframm, Simona Kouteva-Arguirova, and Juergen Reif. "PLD of high-k dielectric films on silicon." In SPIE Proceedings, edited by Isamu Miyamoto, Henry Helvajian, Kazuyoshi Itoh, Kojiro F. Kobayashi, Andreas Ostendorf, and Koji Sugioka. SPIE, 2004. http://dx.doi.org/10.1117/12.596388.

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