Relevant bibliographies by topics / High-k Dielectric Material

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'High-k Dielectric Material'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "High-k Dielectric Material"

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Susarla, Sandhya, Thierry Tsafack, Peter Samora Owuor, et al. "High-K dielectric sulfur-selenium alloys." Science Advances 5, no. 5 (2019): eaau9785. http://dx.doi.org/10.1126/sciadv.aau9785.

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Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of estab
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Ghule, B., and M. Laad. "Polymer Composites with Improved Dielectric Properties: A Review." Ukrainian Journal of Physics 66, no. 2 (2021): 166. http://dx.doi.org/10.15407/ujpe66.2.166.

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Materials exhibiting high dielectric constant (k) values find applications in capacitors, gate dielectrics, dielectric elastomers, energy storage device, while materials with low dielectric constant are required in electronic packaging and other such applications. Traditionally, high k value materials are associated with high dielectric losses, frequency-dependent dielectric behavior, and high loading of a filler. Materials with low k possess a low thermal conductivity. This creates the new challenges in the development of dielectric materials in both kinds of applications. Use of high dielect
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Dixit, Ankita, and Navneet Gupta. "Simulations of the CNFETs using different high-k gate dielectrics." Bulletin of Electrical Engineering and Informatics 9, no. 3 (2020): 943–49. http://dx.doi.org/10.11591/eei.v9i3.1784.

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In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49nm and the CNFETs have been fabricated with the CNT diameter of ~1.5nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2.
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Ankita, Dixit, and Gupta Navneet. "Simulations of the CNFETs using different high-k gate dielectrics." Bulletin of Electrical Engineering and Informatics 9, no. 3 (2020): 943–49. https://doi.org/10.11591/eei.v9i3.1784.

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In this paper we presented the analysis of carbon nanotube field effect transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49 nm and the CNFETs have been fabricated with the CNT diameter of ~1.5 nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO
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Hall, Stephe, Octavian Buiu, Ivona Z. Mitrovic, Yi Lu, and William M. Davey. "Review and perspective of high-k dielectrics on silicon." Journal of Telecommunications and Information Technology, no. 2 (June 25, 2023): 33–43. http://dx.doi.org/10.26636/jtit.2007.2.806.

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The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics, which are compounded by electron trapping phenomena in the microsecond regime. Nearly all practical methods of preparation result in a thin interfacial layer generally of the form SiOx or a mixed oxide between Si and the high-k so that the extraction of the dielectric constant is complicated and values must be qualified by error analysis. The dis
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Dąbrowski, Jaroslaw, Seiichi Miyazaki, S. Inumiya, et al. "The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics." Materials Science Forum 608 (December 2008): 55–109. http://dx.doi.org/10.4028/www.scientific.net/msf.608.55.

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Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents
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Shukla, Prabhat, and Swapnali Makdey. "Simulation of Silicon Nanowire Field Effect Transistor for Different High k Dielectric Material." International Journal of Scientific Engineering and Research 5, no. 2 (2017): 10–12. https://doi.org/10.70729/ijser151218.

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Shimoga, Ganesh, and Sang-Youn Kim. "High-k Polymer Nanocomposite Materials for Technological Applications." Applied Sciences 10, no. 12 (2020): 4249. http://dx.doi.org/10.3390/app10124249.

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Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites
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Misra, Durga. "Advancing Science and Technology of High-k Dielectric at ECS." ECS Meeting Abstracts MA2022-01, no. 18 (2022): 1039. http://dx.doi.org/10.1149/ma2022-01181039mtgabs.

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Historically SiO2 was the main driver as the transistor gate dielectric in CMOS technology. Once the thickness of SiO2 reached the onset of direct tunneling region (<1.5 nm) HfO2 -based high-k insulators were introduced to suppress the direct-tunneling leakage current. ECS started a symposium on Physics and Technology of High-k Gate Dielectrics in 2002 describing the evolution of dielectric science in nanoelectronics. In recent years transistor has transformed from a planar device to a three-dimensional device to a gate all around device. The electrical performance in these devices depends
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SU, WEITAO, QIUHUI ZHUANG, DEXUAN HUO, and BIN LI. "DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS." Surface Review and Letters 19, no. 06 (2012): 1250064. http://dx.doi.org/10.1142/s0218625x12500643.

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The continuous downscaling of metal oxide semiconductor field effect transistors (MOSFET) on silicon, germanium, GaAs , etc. still demands the creation of new high-k dielectrics with even better material performance. In this research, a new ternary high-k dielectric film, LaSmO3 , is deposited using electron-beam evaporation. The structure and high temperature interfacial thermal stabilities are investigated by X-ray diffraction (XRD), X-ray photon electronic spectra (XPS), infrared attenuated total reflection (ATR) and time of flight second ion mass spectroscopy (ToF-SIMS). The band gap and b
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Dissertations / Theses on the topic "High-k Dielectric Material"

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Xu, Toby Ge. "Material and array design for CMUT based volumetric intravascular and intracardiac ultrasound imaging." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54861.

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Recent advances in medical imaging have greatly improved the success of cardiovascular and intracardiac interventions. This research aims to improve capacitive micromachined ultrasonic transducers (CMUT) based imaging catheters for intravascular ultrasound (IVUS) and intra-cardiac echocardiography (ICE) for 3-D volumetric imaging through integration of high-k thin film material into the CMUT fabrication and array design. CMUT-on-CMOS integration has been recently achieved and initial imaging of ex-vivo samples with adequate dynamic range for IVUS at 20MHz has been demonstrated; however, for im
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Tewg, Jun-Yen. "Zirconium-doped tantalum oxide high-k gate dielectric films." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/1346.

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A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant mat
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Han, Lei. "Investigation of Gate Dielectric Materials and Dielectric/Silicon Interfaces for Metal Oxide Semiconductor Devices." UKnowledge, 2015. http://uknowledge.uky.edu/ece_etds/69.

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The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainly contributed to the scaling of the individual component. After decades of development, the scaling trend is approaching to its limitation, and there is urgent needs for the innovations of the materials and structures of the MOS devices, in order to postpone the end of the scaling. Atomic layer deposition (ALD) provides precise control of the deposited thin film at the atomic scale, and has wide application not only in the MOS technology, but also in other nanostructures. In this dissertation, I
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Guerrero, Enriquez Rubén Dario. "Etude des filtres miniatures LTCC High K en bandes L&S." Thesis, Brest, 2016. http://www.theses.fr/2016BRES0036/document.

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Dans les systèmes actuels de communication, qu’ils soient terrestre ou spatial, qu’ils soient mobile ou fixe, il y a un réel intérêt à développer des front-ends radiofréquences et hyperfréquences miniatures et performants. Ceci s’applique en particulier aux dispositifs de filtrage où l’encombrement et les facteurs de qualité sont clairement antagonistes. Pour les bandes de fréquences basses aux alentours du GHz, les longueurs d’onde restent encore importantes, rendant difficiles les efforts de miniaturisation. D’autre part il faut aussi s’assurer que ces filtres viendront s’interconnecter aisé
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Sun, Xiao. "Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors." Thesis, Yale University, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3578458.

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<p> As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology.</p><p> In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well
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Mudanai, Sivakumar Panneerselvam. "Gate current modeling through high-k materials and compact modeling of gate capacitance." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3038191.

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Kirsch, Paul Daniel. "Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3034557.

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Reddy, Raj. "A study of high-K dielectric materials in conjunction with a multilayer thick-film system." Thesis, Virginia Tech, 1988. http://hdl.handle.net/10919/43280.

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A new family of dielectric materials has been studied, individually as thick-film capacitors and as buried components incorporated in second-order lowpass and bandpass RC active filter circuits. The materials were electrically characterized in terms of the variation of dielectric constant and dissipation factor with frequency. The performance of the filter circuit is related to the characteristics of the dielectric materials. An analysis of the circuit is developed which accounts for the capacitor losses.<br>Master of Science
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Cheng, Cheng-Wei Ph D. Massachusetts Institute of Technology. "In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/59216.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.<br>Includes bibliographical references (p. 164-168).<br>In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first selected to be in situ deposited on GaAs surface by using trimethlyaluminum(TMA) and dimethylhydrazine (DMHy). However, the frequency dispersion
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Sreenivasan, Raghavasimhan. "Metal-gate/high-k dielectric stack engineering by atomic layer deposition : materials issues and electrical properties /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Books on the topic "High-k Dielectric Material"

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Michel, Houssa, ed. High-K gate dielectrics. Institute of Physics, 2004.

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International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (1st 2003 Salt Lake City, Utah). Physics and technology of high-k gate dielectrics I : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, Reliability, and Manufacturing Issues, held in Salt Lake City, Utah, October 20-24, 2002. Edited by Kar S. 1942-, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Electrochemical Society, 2003.

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High-K Gate Dielectric Materials. Taylor & Francis Group, 2020.

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Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials. Taylor & Francis Group, 2022.

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Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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Houssa, Michael. High k Gate Dielectrics (Materials Science and Engineering). Taylor & Francis, 2003.

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Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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Houssa, Michel, and M. Houssa. High K Gate Dielectrics. Taylor & Francis Group, 2010.

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Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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Book chapters on the topic "High-k Dielectric Material"

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Sahu, Partha Pratim. "High-k Material Processing in CMOS VLSI Technology." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-7.

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Rai, D. P. "Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-9.

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Maity, N. P., and Reshmi Maity. "Tunneling Current Density and Tunnel Resistivity: Application to High-k Material HfO2." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-5.

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Maity, N. P., and Reshmi Maity. "Analysis of Interface Charge Density: Application to High-k Material Tantalum Pentoxide." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-6.

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Gajendran, Sathish, and Radhika Baskar. "Stochastic Performance of CNTFET with High ‘k’ Dielectric Material Over Conventional Silicon Devices in Optimization of Drain Current." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-8661-3_47.

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Maity, N. P., and Reshmi Maity. "Selection of High-k Dielectric Materials." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-4.

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Harsha, P. Sri, K. Venkata Saravanan, and V. Madhurima. "High-k Dielectric Materials: Structural Properties and Selection." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-3.

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Maity, N. P., and Reshmi Maity. "Moore’s Law: In the 21st Century." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-1.

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Maity, N. P., and Reshmi Maity. "SiO2-Based MOS Devices: Leakage and Limitations." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-2.

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Baishya, Srimanta. "Tunnel FET: Working, Structure, and Modeling." In High-K Gate Dielectric Materials. Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-8.

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Conference papers on the topic "High-k Dielectric Material"

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Kumar, Jeetendra, Shilpi Birla, and Garima Agarwal. "Effect of High-K Dielectric Material on TG n-FinFET to Minimize the Short Channel Effects (SCEs)." In 2024 IEEE Silchar Subsection Conference (SILCON). IEEE, 2024. https://doi.org/10.1109/silcon63976.2024.10910845.

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Sujith, M. B., I. Flavia Princess Nesamani, V. Lakshmi Prabha, Anoob Eapen Chacko, and Rekha Divakaran. "Design optimization of segmented-channel MOSFET using high-K dielectric material." In 2014 International Conference on Electronics and Communication Systems (ICECS). IEEE, 2014. http://dx.doi.org/10.1109/ecs.2014.6892718.

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Alam, A. S., and J. S. Aitchison. "Low Half-Wave-Voltage Lithium Niobate Modulator Using High-K Dielectric Material Cladding." In Bragg Gratings, Photosensitivity and Poling in Glass Waveguides and Materials. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/bgppm.2022.jtu2a.9.

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The design of an etched lithium niobate waveguide-based modulator with a high-K dielectric cladding is proposed. Optimized design of the Mach-Zehnder interferometer modulator shows a low half-wave-voltage-length product of ~1.52 V.cm.
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Goh, W. Z., B. Fong, H. Hussin, and S. F. Wan Muhamad Hatta. "Study of Scaling Limits of Multi-Gate Fets (Finfet) With High-K Dielectric." In International Technical Postgraduate Conference 2022. AIJR Publisher, 2022. http://dx.doi.org/10.21467/proceedings.141.18.

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Scaling of Multi-Gate FETs (FinFETs) to sub nanometer has seen several challenging problems such as short channel effects which significantly affect the device performance and huge off-state power leakage. High-k dielectric materials had always been looked at as a potential replacement to the conventional SiO2 to increase gate control over the channel which could be a possible solution. This paper examines the impact of scaling FinFETs with varying geometric conditions in the presence of high-k gate dielectrics oxide layer, and further demonstrate conflicting technical trade-off that emerges f
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Bourahla, Nassima, Baghdad Hadri, Nour El I. Boukortt, and Ahmed Bourahla. "Impact of High-k Dielectric Material on Ultra-Short-DG-FinFET Performance." In 2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS). IEEE, 2021. http://dx.doi.org/10.1109/telsiks52058.2021.9606360.

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Mohanta, Debasish, and Sruti Suvadarsini Singh. "Effect of using High-k Dielectric Material on Transconductance of a Strained-Si PMOS." In 2021 International Conference on Intelligent Technologies (CONIT). IEEE, 2021. http://dx.doi.org/10.1109/conit51480.2021.9498453.

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Dixit, Swati, and Manisha Pattanaik. "Programming Characteristics of Two-Bit Sonos Type Flash Memory Using High-K Dielectric Material." In 2015 Fifth International Conference on Communication Systems and Network Technologies (CSNT). IEEE, 2015. http://dx.doi.org/10.1109/csnt.2015.285.

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Mohanta, Debashis, and Sruti Suvadarsini Singh. "Study of Electrical Parameters of Strained Si PMOS with High k Dielectric Material Using TCAD." In 2022 IEEE VLSI Device Circuit and System (VLSI DCS). IEEE, 2022. http://dx.doi.org/10.1109/vlsidcs53788.2022.9811476.

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Antonov, Valentin, Vladimir Popov, Sergey Tarkov, and Ida Tyschenko. "STRUCTURAL AND ELECTROPHYSICALLY PERFECT SILICONSAPPHIRE HETEROPAIRS WITH A HIGH-K INTERLAYER DIELECTRIC." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1588.silicon-2020/164-166.

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This work investigates the features of the formation of a silicon-sapphire interlayer heterointerface obtained by direct splicing, both with an intermediate amorphous dielectric (Hf, Zr, Al; AlN oxides) and without it. The results of structural and electrophysical studies of these structures are presented.
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Kudtarkar, S. A., R. Murcko, K. Srihari, and S. Saiyed. "To Study the High Temperature Effects on Ball Bonds Using Low K Material in Wire Bond Devices." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-43765.

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Wire bonding is widely used as one of the main interconnect alternatives. This technique applies significant mechanical stresses on the bond pads along with heat and ultrasonic energy to form a bond. An interconnection of copper plus low k material has been a focus of the semiconductor industry with the goal of reducing interconnection delays. The material is below the wire bond pads and complicates the mechanical stability of the device during wire bonding. The low k materials that are suggested are very sensitive to these mechanical stresses. This generates a significant reliability concern
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