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1

Gusev, Evgeni, ed. Defects in High-k Gate Dielectric Stacks. Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4367-8.

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2

Michel, Houssa, ed. High-K gate dielectrics. Institute of Physics, 2004.

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3

Yang, Kuo-Chang. Characterization of Gd2O3 high-K dielectric films on Si(001). National Library of Canada, 2000.

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4

Evgeni, Gusev, ed. Defects in high-k gate dielectric stacks: Nano-electronic semiconductor devices. Springer, 2006.

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5

International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (1st 2003 Salt Lake City, Utah). Physics and technology of high-k gate dielectrics I : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, Reliability, and Manufacturing Issues, held in Salt Lake City, Utah, October 20-24, 2002. Edited by Kar S. 1942-, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Electrochemical Society, 2003.

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6

Kim, Young-Hee, and Jack C. Lee. Hf-Based High-k Dielectrics. Springer International Publishing, 2005. http://dx.doi.org/10.1007/978-3-031-02552-5.

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7

Moharana, Srikanta, Santosh Kumar Satpathy, Tuan Anh Nguyen, Ram K. Gupta, and Parvej Ahmad Alvi. Metal Oxide-based High-K Dielectrics. CRC Press, 2025. https://doi.org/10.1201/9781003352365.

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8

He, Gang, and Zhaoqi Sun, eds. High-k Gate Dielectrics for CMOS Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527646340.

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9

International, Symposium on High Dielectric Constant Gate Stacks (4th 2006 Cancun Mexico). Physics and technology of high-k gate dielectrics 4. Electrochemical Society, 2006.

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10

International, Symposium on High Dielectric Constant Materials and Gate Stacks (5th 2007 Washington D. C. ). Physics and technology of high-k gate dielectrics 5. Electrochemical Society, 2007.

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11

International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (3rd 2005 Los Angeles, Calif.). Physics and technology of high-k gate dielectrics III. Edited by Kar S. 1942-, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society. Electronics and Photonics Division. Electrochemical Society, 2006.

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12

International Symposium on High Dielectric Constant Gate Stacks (4th 2006 Cancun, Mexico). Physics and technology of high-k gate dielectrics 4. Edited by Kar S. 1942-, Electrochemical Society Meeting, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society. Electronics and Photonics Division. Electrochemical Society, 2006.

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13

High-K Gate Dielectric Materials. Taylor & Francis Group, 2020.

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14

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials. Taylor & Francis Group, 2022.

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15

Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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16

Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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17

Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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18

Houssa, Michel, and M. Houssa. High K Gate Dielectrics. Taylor & Francis Group, 2010.

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19

Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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20

Houssa, Michael. High k Gate Dielectrics (Materials Science and Engineering). Taylor & Francis, 2003.

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21

Gusev, Evgeni. Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices. Springer, 2006.

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22

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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23

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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24

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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25

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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26

Physics and technology of high-k gate dielectrics II: Proceedings of the Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues : held in Orlando, Florida, October 12-16, 2003. Electrochemical Society, 2004.

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27

Gusev, Evgeni. Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (NATO Science Series II: Mathematics, Physics and Chemistry) (NATO Science ... II: Mathematics, Physics and Chemistry). Springer, 2006.

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28

He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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29

He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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30

He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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31

He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Limited, John, 2012.

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32

Physics and Technology of High-k Gate Dielectrics I. Electrochemical Society, Incorporated, 2003.

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33

Kim, Young Hee, and Jack C. Lee. Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability. Morgan & Claypool Publishers, 2006.

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34

Kim, Young Hee, and Jack C. Lee. Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability. Springer International Publishing AG, 2007.

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35

Shiraishi, K., and T. Nakayama. Role of computational sciences in Si nanotechnologies and devices. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.1.

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This article discusses the role of computational sciences in the fabrication of silicon nanotechnologies and devices, with particular emphasis on new scientific findings that offer great insight into such devices. It first considers how the present Si technology trend is stimulated by scientific knowledge, focusing on the potential of complimentary metaloxide semiconductor (CMOS) technology and the importance of understanding the atomisticprocess of Si thermal oxidation. It then discusses key knowledge for Si nanodevices obtainedby computational science, paying attention to the microscopic pro
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36

Kim Young-Hee and Jack C. Lee. Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability (Synthesis Lectures on Solid State Materials and Devices). Morgan & Claypool Publishers, 2005.

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37

Advanced Technologies for Next Generation Integrated Circuits. Institution of Engineering & Technology, 2020.

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38

(Editor), H. R. Huff, C. A. Richter (Editor), M. L. Green (Editor), G. Lucovsky (Editor), and T. Hattori (Editor), eds. Ultrathin Sio2 and High-K Materials for Ulsi Gate Dielectrics: Symposium Held April 5-8, 1999 San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 1999.

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