Log in

Relevant bibliographies by topics / High-k dielectric / Dissertations / Theses

To see the other types of publications on this topic, follow the link: High-k dielectric.

Dissertations / Theses on the topic 'High-k dielectric'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 dissertations / theses for your research on the topic 'High-k dielectric.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Hung, Ting-Hsiang. "Novel High-k Dielectric Enhanced III-Nitride Devices." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Sun, Xiao. "Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors." Thesis, Yale University, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3578458.

Full text

Abstract:

<p> As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology.</p><p> In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well

APA, Harvard, Vancouver, ISO, and other styles

3

Cicerrella, Elizabeth. "Dielectric functions and optical bandgaps of high-K dielectrics by far ultraviolet spectroscopic ellipsometry /." Full text open access at:, 2006. http://content.ohsu.edu/u?/etd,2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Galassi, Fabio. "Fabrication of high-k dielectric thin films for spintronics." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10449/.

Full text

Abstract:

Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del cara

APA, Harvard, Vancouver, ISO, and other styles

5

Tewg, Jun-Yen. "Zirconium-doped tantalum oxide high-k gate dielectric films." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/1346.

Full text

Abstract:

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant mat

APA, Harvard, Vancouver, ISO, and other styles

6

Lancaster, Janet. "Organic MIS Devices Based on a High-k Dielectric." Thesis, Bangor University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520852.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Khan, Md Ziaur Rahman Khan. "Sol-gel based high-k dielectric field effect transistors." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611429.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Jeon, Yongjoo. "High-k gate dielectric for 100 nm MOSFET application /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004296.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Raghu, Prashant. "Interaction of molecular contaminants with high-k dielectric surfaces." Diss., The University of Arizona, 2003. http://hdl.handle.net/10150/280445.

Full text

Abstract:

As the device feature size shrinks, films of silicon oxide (SiO₂) will become unsuitable for MOSFET gate dielectric applications and have to be replaced by thicker films of a high-k dielectric material. Among the high-k materials, hafnium oxide (HfO₂) and zirconium oxide (ZrO₂) are the most promising candidates. Molecular contamination can affect the quality of the new gate dielectric films in a manner similar to ultrathin SiO2 films. Therefore, characterization of contaminant adsorption behavior of these high-k films should assist in deciding their potential for successful integration in sili

APA, Harvard, Vancouver, ISO, and other styles

10

Luo, Wen. "Reliability characterization and prediction of high k dielectric thin film." Texas A&M University, 2004. http://hdl.handle.net/1969.1/3225.

Full text

Abstract:

As technologies continue advancing, semiconductor devices with dimensions in nanometers have entered all spheres of human life. This research deals with both the statistical aspect of reliability and some electrical aspect of reliability characterization. As an example of nano devices, TaO<sub>x</sub>-based high k dielectric thin ﬁlms are studied on the failure mode identiﬁcation, accelerated life testing, lifetime projection, and failure rate estimation. Experiment and analysis on dielectric relaxation and transient current show that the relaxation current of high k dielectrics

APA, Harvard, Vancouver, ISO, and other styles

11

Davey, William Mark. "High-k dielectric stacks for integration into an advanced CMOS process." Thesis, University of Liverpool, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.526811.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Zahid, Mohammed B. "Characterization of high-k layers as the gate dielectric for MOSFETs." Thesis, Liverpool John Moores University, 2006. http://researchonline.ljmu.ac.uk/5819/.

Full text

Abstract:

As the gate oxide thickness of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is continuously scaled down with lateral device dimensions, the gate leakage current during operation increases exponentially. This increase in leakage current raises concerns regarding power consumption and device reliability. Alternative dielectrics with higher dielectric constant (high-k) than that of Si02 have been searched. High-k layers allow the use of physically thicker gate dielectrics, so that the gate leakage current is controlled. The intensive world-wide research has identified the Hf-die

APA, Harvard, Vancouver, ISO, and other styles

13

Qian, Lingxuan, and 钱凌轩. "Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/206467.

Full text

Abstract:

In general, La-based high-k gate dielectric owns superior properties to offer transistor excellent characteristics. Thus, amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric has been investigated in this thesis. Different approaches have been adopted to improve the device performance. First of all, the influence of gate-dielectric annealing in oxygen for different times on the device characteristics of the amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been investigated. It is demonstrated that this annealing treatment can effectively suppress

APA, Harvard, Vancouver, ISO, and other styles

14

Mao, Yu-lung. "Novel high-K gate dielectric engineering and thermal stability of critical interface /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Mudanai, Sivakumar Panneerselvam. "Gate current modeling through high-k materials and compact modeling of gate capacitance." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3038191.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Xu, Toby Ge. "Material and array design for CMUT based volumetric intravascular and intracardiac ultrasound imaging." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54861.

Full text

Abstract:

Recent advances in medical imaging have greatly improved the success of cardiovascular and intracardiac interventions. This research aims to improve capacitive micromachined ultrasonic transducers (CMUT) based imaging catheters for intravascular ultrasound (IVUS) and intra-cardiac echocardiography (ICE) for 3-D volumetric imaging through integration of high-k thin film material into the CMUT fabrication and array design. CMUT-on-CMOS integration has been recently achieved and initial imaging of ex-vivo samples with adequate dynamic range for IVUS at 20MHz has been demonstrated; however, for im

APA, Harvard, Vancouver, ISO, and other styles

17

Yang, Kuo-Chang. "Characterization of Gd¦2O¦3 high-K dielectric films on Si(001)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0018/MQ54130.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Ha, Jeong-Hee. "Atomic scale experimental and theoretical studies of high-k gate dielectric interfaces /." May be available electronically:, 2008. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Lu, Jiang. "Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology." Texas A&M University, 2005. http://hdl.handle.net/1969.1/4714.

Full text

Abstract:

A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The film's electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx impacted the electrical properties. The doping process improved the effective dielectric constant, reduced the fixed charge density, and increased the dielectric strength. The leakage current density also decreased with the Hf doping concentration. MOS capaci

APA, Harvard, Vancouver, ISO, and other styles

20

Kirsch, Paul Daniel. "Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3034557.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Bêche, Elodie. "Etude des collages directs hydrophiles mettant en jeu des couches diélectriques." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY064/document.

Full text

Abstract:

Le collage direct consiste à l’adhésion spontanée dès température ambiante de deux surfaces sans ajout de matière polymère à l’interface de collage. Réalisable sous vide ou à pression atmosphérique, il possède l’avantage de permettre l’empilement de matériaux monocristallins sur des matériaux amorphes, parfaitement illustrée, par exemple, avec la fabrication de substrats SOI (silicium sur isolant) couramment utilisé de nos jours en microélectronique et/ou en microtechnologie. La course à la performance et/ou pluridisciplinarité des circuits électroniques nécessite la maîtrise de ce procédé pou

APA, Harvard, Vancouver, ISO, and other styles

22

Han, Lei. "Investigation of Gate Dielectric Materials and Dielectric/Silicon Interfaces for Metal Oxide Semiconductor Devices." UKnowledge, 2015. http://uknowledge.uky.edu/ece_etds/69.

Full text

Abstract:

The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainly contributed to the scaling of the individual component. After decades of development, the scaling trend is approaching to its limitation, and there is urgent needs for the innovations of the materials and structures of the MOS devices, in order to postpone the end of the scaling. Atomic layer deposition (ALD) provides precise control of the deposited thin film at the atomic scale, and has wide application not only in the MOS technology, but also in other nanostructures. In this dissertation, I

APA, Harvard, Vancouver, ISO, and other styles

23

Ren, Fang. "Development of Aluminum Oxide (Al2O3) Gate Dielectric Protein Biosensor under Physiologic Buffer." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331128526.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Reddy, Raj. "A study of high-K dielectric materials in conjunction with a multilayer thick-film system." Thesis, Virginia Tech, 1988. http://hdl.handle.net/10919/43280.

Full text

Abstract:

A new family of dielectric materials has been studied, individually as thick-film capacitors and as buried components incorporated in second-order lowpass and bandpass RC active filter circuits. The materials were electrically characterized in terms of the variation of dielectric constant and dissipation factor with frequency. The performance of the filter circuit is related to the characteristics of the dielectric materials. An analysis of the circuit is developed which accounts for the capacitor losses.<br>Master of Science

APA, Harvard, Vancouver, ISO, and other styles

25

ISLAM, MD SHAHRUL. "Can Asymmetry Quench Self-Heating in MOS High Electron Mobility Transistors?" OpenSIUC, 2020. https://opensiuc.lib.siu.edu/theses/2736.

Full text

Abstract:

High electron mobility transistors (HEMTs) have long been studied for high frequency and high-power application. Among widely known high electron mobility transistors, AlGaN/GaN HEMTs are having the upper hand due to high electron mobility of the GaN channel. Over the times, issues like current collapse, gate leakage, self-heating and gate lag have questioned the performance and reliability of these devices. In the recent years, engineers have come up with newer architectures to address some of these issues. Inserting a high-k dielectric oxide layer in the gate stack proved to be an effective

APA, Harvard, Vancouver, ISO, and other styles

26

Yan, Liang. "Characterisation of gate oxide and high-k dielectric reliability in strained si and sige cmos transistors." Thesis, University of Newcastle Upon Tyne, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.506541.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Hsu, Ting-wei, and 許庭瑋. "CoTiO3 High-k Dielectric for Nonvolatile Memory." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/06246768756251195759.

Full text

Abstract:

碩士<br>國立中興大學<br>電機工程學系<br>89<br>In this thesis, for the first time we have fabricated CoTiO3 high-k material as the interpoly dielectrics for nonvolatile memory application. We found that the dielectric constant with the barrier layer can be reached as high as 40. CoTiO3 thin film were thermally grown in oxygen ambient on the deposited Co and Ti stacked metal films in 700、800、900 °C respectively. It is found that samples with 700 and 800 °C oxidation show a good characteristic, including reasonable breakdown field and leakage. Charge trapping and conducting mechanism were studied in detail for

APA, Harvard, Vancouver, ISO, and other styles

28

Lee, Jiann-Shing, and 李建興. "Study of Ultrathin Gate Dielectric and High K Gate Dielectric for CMOS Technology." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/xe679m.

Full text

Abstract:

博士<br>國立成功大學<br>電機工程學系碩博士班<br>90<br>In this thesis two dielectric materials, silicon dioxide SiO2 and tantalum pentoxide Ta2O5, were investigated. In the development of the integrated circuit, the MOS device plays a very important role. The silicon dioxide SiO2 is used to act as its insulator layer. When the device dimension is scaled down, the thickness of the insulator layer is also reduced. Owing to the scaling of the oxide thickness, the increase of the oxide leakage current is inevitable. For minimizing the gate leakage current, many new technologies are recommended to grow high quality t

APA, Harvard, Vancouver, ISO, and other styles

29

Tze-Chiang, Chen. "Optical and Electrical Propterties of High-k Dielectric Materials." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1407200615114300.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Carriles, Jaimes Ramón. "Nonlinear optical characterization of Si/high-k dielectric interfaces." Thesis, 2005. http://hdl.handle.net/2152/2399.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Lee, Shih-Ching, and 李時璟. "The Reliability of Strain NMOSFETS With High-K Dielectric." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/44990352222989515914.

Full text

Abstract:

碩士<br>國立交通大學<br>電子物理系所<br>98<br>This dissertation majorly studies the charge trapping and de-trapping in Hf-based high-k gate dielectrics with different contacting etching stopping layer thickness through various electrical characterizations under changing different stress condition. Unlike the conventional SiO2 or SiON gate oxides, Hf-based high-k gate dielectrics are known to suffer from the serious reliability concern of threshold voltage instability due to the fast and slow charge trapping and de-trapping in the pre-existing bulk traps in Hf-based high-k gate dielectric, especially under t

APA, Harvard, Vancouver, ISO, and other styles

32

賴妍心. "Nonvolatile Memory with High-k Dielectric Materials and Nanocrystals." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/44206378672516968607.

Full text

Abstract:

碩士<br>國立交通大學<br>電子工程系所<br>96<br>In this thesis, we design various nonvolatile memories with several high-k material films as charge-trapping layers. The high-k layers replace the conventional silicon nitride trapping layer and silicon dioxide blocking layer in the SONOS structure. We modified the treatment during the process such that we can fabricate the nanocrystal flash memories. In particularly, we complete the source/drain and the tunnel oxide first. First, we present the SONOS-type flash memory that was fabricated using hafnium oxide (HfO2) film and hafnium silicate (HfSiOx) film as

APA, Harvard, Vancouver, ISO, and other styles

33

Nawaz, Muhammad. "Resistive switching characteristics in high-k dielectric thin films." Phd thesis, 2012. http://hdl.handle.net/1885/156046.

Full text

Abstract:

Hafnium oxide (HfO{u2082}) and hafnium silicate (HfxSi{u2081}-x0{u2082}) thin films are of interest as replacement for Si0{u2082} in future microelectronic devices due to their high dielectric constant (k) and better thermal stability, respectively. These properties make hafnium oxide a potential candidate for the fabrication of integrated planar waveguide devices or structures that combine electronic and photonic functionality on a single chip. However, one potential limitation of the material is that it crystallizes at relatively low temperatures, ~300-400{u00B0}C. This can result in in

APA, Harvard, Vancouver, ISO, and other styles

34

Bai, Weiping. "Germanium MOS devices integrating high-k dielectric and metal gate." Thesis, 2007. http://hdl.handle.net/2152/2991.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Bai, Weiping 1972. "Germanium MOS devices integrating high-k dielectric and metal gate." 2007. http://hdl.handle.net/2152/12828.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Lee, Heng, and 李衡. "Characterizations of GaN Transistors By Using High-K Gate Dielectric." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/s79j53.

Full text

Abstract:

碩士<br>國立交通大學<br>電子工程學系電子研究所<br>102<br>GaN is one of the most attractive semiconductor materials because its wide bandgap, high breakdown voltage, high saturation velocity, and good thermal and chemical stability, which can apply to high-voltage, high-power and high-frequency electronic devices. On the other hands, the quality of thin film deposition has the requirement for atomic level because of the miniaturization in the semiconductor industry. Therefore, the technique of ALD is suitable for the condition due to it has the advantage of excellent film adhesion, good step coverage, and thickn

APA, Harvard, Vancouver, ISO, and other styles

37

Shao, Yu Hsuan, and 邵佑軒. "High-k Er2O3 gate dielectric of amorphous-InGaZnO TFTs applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/28281637422770822774.

Full text

Abstract:

碩士<br>長庚大學<br>電子工程學系<br>99<br>In this work, we used TaN as gate electrode. The α-IGZO thin film transistors with Er2O3 gate dielectric were deposited by sputter system, and the α-IGZO as active layer. Finally, the aluminum as source and drain were deposited by thermal evaporator. The advantages of erbium gate dielectric includes high-k value, lower gate leakage, and good thermal stability. We have fabricated α-IGZO TFTs with a high-k Er2O3, ErTixOy and a HfO2/Er2O3/HfO2 tri-stack gate dielectric, which shows high-k value, lower gate leakage, and superior thermal stability. The TaN as a gate

APA, Harvard, Vancouver, ISO, and other styles

38

Wang, Chih-Kai, and 王致凱. "Study of Nanocrystal Embedded High-k Dielectric for Nonvolatile Memories." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/07248017555402216508.

Full text

Abstract:

碩士<br>逢甲大學<br>電子工程所<br>100<br>RRAM has become the possible structure of next non-volatile memory, because it has many advantages such as quick set/reset operation, high storage capacity, low power consumption and good volume to shrink capacity. In this thesis, the structures include nanocrystal Embedded RRAM capacitor, nanowire memory device, as well as different bottom electrodes (Ti and TiN) capacitors to explore the access to oxygen/release capacity. Nanocrystal Embedded RRAM capacitor show Pd/ HfO2 50A/TiN NCs 7A/ HfO2 50A /TiN and Pd/ HfO2 50A/ Pd NCs 25A/ HfO2 50A /TiN structures, which

APA, Harvard, Vancouver, ISO, and other styles

39

Chou, Jay-Chi, and 鍾杰志. "The study of high-k dielectric IGZO Thin-Film Transistor." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/80147965266514324770.

Full text

Abstract:

碩士<br>國立聯合大學<br>電子工程學系碩士班<br>101<br>In recent years, IGZO (Indium Gallium Zinc Oxide) is widely used to produce the transparent thin film transistors (TTFT), the main reason is because the IGZO with high carrier mobility rate, high switching current ratio, low temperature process, good uniformity, large area processes, such as these superior characteristics. Therefore, in this study will be used IGZO as the active layer, with bottom gate and top-contact structure, and all the process’s temperature will below in 600 ° C to produce TFT. In order to improve the TFT’s drive current, The choice of

APA, Harvard, Vancouver, ISO, and other styles

40

Kuo, Po Shu, and 郭博書. "The study of High-K Ti-doped Dy2O3 dielectric layer." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/84073407943631535932.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Price, James Martin 1980. "Optical characterization of high-[Kappa] dielectric structures." Thesis, 2009. http://hdl.handle.net/2152/ETD-UT-2009-12-633.

Full text

Abstract:

Charge trapping dynamics in Si/SiO2/Hf(1-x)SixO2 and III-V film stack systems are characterized using spectroscopic ellipsometry (SE) and second harmonic generation (SHG). For the first time, discrete absorption features within the bandgap of the SiO2 interfacial layer are identified using SE, and their relation to both intrinsic and process-induced defects is proposed. Sensitivity of the absorption features to process conditions is demonstrated and evidence that these defects contribute to Vfb roll-off is presented. Defects in the Hf(1-x)SixO2 films are probed with fs laser-induced internal

APA, Harvard, Vancouver, ISO, and other styles

42

Lin, Chen-Han. "Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films." Thesis, 2011. http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884.

Full text

Abstract:

Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor (MOSFET) and nonvolatile memory. ZrHfO has excellent gate dielectric properties and can be prepared into MOS structure with a low equivalent oxide thickness (EOT). Ruthenium (Ru) modification effects on the ZrHfO high-k MOS capacitor have been investigated. The bulk and interfacial properties changed with the inclusion of Ru nanoparticles. The permittivity of the ZrHfO film was increased while the energy

APA, Harvard, Vancouver, ISO, and other styles

43

Jur, Jesse Stephen. "Lanthanide-based oxides and silicates for high-K gate dielectric applications." 2007. http://www.lib.ncsu.edu/theses/available/etd-06282007-143330/unrestricted/etd.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Gu, Wei Ming, and 古惟銘. "CoTiO3 High-k Dielectric on HSG Floating Cell for Nonvolatile Memory." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/h32zcf.

Full text

Abstract:

碩士<br>國立中興大學<br>電機工程學系<br>90<br>A novel high-k cobalt-titanium oxide (CoTiO3) was formed by low pressure chemical vapor deposition (LPCVD). It can be used for the interpoly dielectrics for nonvolatile memory, storage capacitor dielectric for DRAM and gate oxide for MOSFET applications. In this work, for the first time, the cobalt-titanium oxide (CoTiO3) was fabricated by directly oxidizing sputtered Co/Ti film on the differential process conditions poly-Si bottom electrodes with PVD-TiN as the top plate electrode. There are three various process to form poly-Si electrodes. The first type was h

APA, Harvard, Vancouver, ISO, and other styles

45

Chen, Heui-Feng, and 陳輝峰. "The degradation of HfOxNy High-k dielectric under Nano-scale stress." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/tj98vu.

Full text

Abstract:

碩士<br>國立暨南國際大學<br>電機工程學系<br>94<br>The main purpose of this thesis is to investigate the degradation and breakdown characteristics of high-k hafnium oxynitride oxide layer by using conductive atomic force microscopy（CAFM）。 The breakdown and degradation characteristics are highly localized phenomenon, typically in a range of several hundred nano-meter squares. Conventional method of analyzing oxide reliability use electrical tests such as I-V and C-V measurements that are made on MOS capacitor devices. Due to the larger area of the devices, these measurements provide spatially average informati

APA, Harvard, Vancouver, ISO, and other styles

46

Yang, Bing-Rong, and 楊秉融. "High-k dielectric grown on GaAs substrates by atomic layer deposition." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/29270054834890889880.

Full text

Abstract:

碩士<br>國立中興大學<br>電機工程學系所<br>103<br>In this thesis, we grew different thicknesses of high-k dielectric layer Al2O3 thin film prepared by atomic layer deposition on n-type GaAs substrate. Specifically the enhancement of the dielectric response of Al2O3 by addition of pre-substrate etching and post oxide annealing is examined. The Al2O3 deposition used TMA as precursor and H2O as oxidant. Specimen sets consisted of as-deposited samples and samples underwent post oxide annealing at 400oC ~700oC in N2 for 30 minutes. The top and bottom metal electrodes were deposited following rapid thermal annealin

APA, Harvard, Vancouver, ISO, and other styles

47

Fu, Wen-Yu, and 傅文煜. "Characteristic and Investigation of High-k (HfAlOxNy) Dielectric on MOS Devices." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/57402008819128637390.

Full text

Abstract:

碩士<br>國立交通大學<br>電子工程系所<br>94<br>According to the scaling rules, aggressive scaling has led to silicon dioxide (SiO2) gate dielectrics as ultra thin in state-of-the-art CMOS technologies. As a consequence, static leakage power due to direct tunneling through the gate oxide has been increasing at an exponential rate. As technology roadmaps call for sub-10Å gate oxides within the next five years, a variety of alternative high-k materials are being investigated as possible replacements for SiO2. The higher dielectric constants in these materials allow the use of physically thicker films, potential

APA, Harvard, Vancouver, ISO, and other styles

48

Lin, Ching-Hsien, and 林京憲. "First-Principle Investigation on Oxygen Vacancy in High-K Dielectric Materials." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/18940294968448298313.

Full text

Abstract:

碩士<br>國立高雄應用科技大學<br>電子工程系<br>97<br>Recently, the thickness of gate oxide made from SiO2 in nano-scale MOSFET has reached a physical limit according to the current leakage. The High-K dielectric materials have been found to be a good solution to the problem. However, there is a tradeoff between the dielectric constant and the energy gap in High-K materials, a larger dielectric constant usually associated with a smaller energy gap. To solve this problem a multilayer structure is adopted, for example a TiO2 grown on HfO2. In this work, an alloy oxide of Hf(1-X)TiXO2 is studied because the propert

APA, Harvard, Vancouver, ISO, and other styles

49

Shiau, Ming-Kai, and 蕭名凱. "Electrical Properties and Reliability of Various High-k Gate Dielectric Stacks." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/01214313956202302406.

Full text

Abstract:

碩士<br>國立暨南國際大學<br>電機工程學系<br>99<br>The material physical properties, electrical characteristics, breakdown behavior, and reliability performance of three gate dielectric structures with HfO2, HfO2/Al2O3, and HfO2/SiO2 were investigated in this study. In this paper, the electrical and reliability of n-type metal-oxide-semiconductor capacitor (nMOSC) was analyzed and compared based on the fixed physical thickness, identical equivalent oxide thickness (EOT), and various film thicknesses. Experimental results indicate that single HfO2 structure without SiO2 or Al2O3 barrier protection layer have ob

APA, Harvard, Vancouver, ISO, and other styles

50

Ke, Jhong-You, and 柯忠佑. "Nanoscale Electrical Characterization of HfO2 High-K Dielectric Under Physical Strain." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/26978739844162800788.

Full text

Abstract:

碩士<br>國立暨南國際大學<br>電機工程學系<br>100<br>The main theme of this thesis is to investigate the degradation and breakdown characteristics at nanoscale of high-k dielectric, hafnium dioxide, under uniaxial mechanical (physical) strain. As mentioned in many literatures, high-k dielectric materials are considered being used to replaced the conventional gate oxide SiO2 for the purpose of reducing the ever-increasing gate oxide leakage current caused by the decreasing oxide thickness in metal-oxide-semiconductor (MOS) devices, especially for those devices with gate oxide thickness less than 1.5 nm. For the

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!