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Journal articles on the topic 'High-k dielectric'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Susarla, Sandhya, Thierry Tsafack, Peter Samora Owuor, et al. "High-K dielectric sulfur-selenium alloys." Science Advances 5, no. 5 (2019): eaau9785. http://dx.doi.org/10.1126/sciadv.aau9785.

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Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of estab

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2

Singh, Rajenda, and Richard K. Ulrich. "High and Low Dielectric Constant Materials." Electrochemical Society Interface 8, no. 2 (1999): 26–30. http://dx.doi.org/10.1149/2.f06992if.

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Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reporte

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3

Lo, Wai, Arvind Kamath, Shreyas Kher, Craig Metzner, Jianguo Wen, and Zhihao Chen. "Deposition and characterization of HfO2 high k dielectric films." Journal of Materials Research 19, no. 6 (2004): 1775–82. http://dx.doi.org/10.1557/jmr.2004.0247.

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As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their higher k values (e.g., 15–50) raise the physical thickness of the dielectrics that provide similar equivalent thickness of a thinner SiO2 film. In order for the high k materials to be applicable in CMOS devices, there should exist deposition technologies that can deposit highly uniform films over Si wafers

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4

Lu, Feng Ming, Jiang Shao, Xiao Yu Liu, and Xing Hao Wang. "Research on TDDB Effect in High-k Materials." Advanced Materials Research 548 (July 2012): 203–8. http://dx.doi.org/10.4028/www.scientific.net/amr.548.203.

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With continual scaling of ICs, the thickness of gate oxide becomes thinner and thinner which affects the reliability of semiconductor device greatly. The mechanism of time-dependent dielectric breakdown (TDDB) was analyzed. Six mathematical models of TDDB which were divided according to the position of defects and the physical property of charged particles were discussed. Then the dielectric breakdown characteristic of high k dielectrics and the relationships between the breakdown electric field, field acceleration parameter and dielectric constant were analyzed in detail. Finally, the relatio

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5

Misra, Durga. "Advancing Science and Technology of High-k Dielectric at ECS." ECS Meeting Abstracts MA2022-01, no. 18 (2022): 1039. http://dx.doi.org/10.1149/ma2022-01181039mtgabs.

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Historically SiO2 was the main driver as the transistor gate dielectric in CMOS technology. Once the thickness of SiO2 reached the onset of direct tunneling region (<1.5 nm) HfO2 -based high-k insulators were introduced to suppress the direct-tunneling leakage current. ECS started a symposium on Physics and Technology of High-k Gate Dielectrics in 2002 describing the evolution of dielectric science in nanoelectronics. In recent years transistor has transformed from a planar device to a three-dimensional device to a gate all around device. The electrical performance in these devices depends

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6

You, Yong, Chenhao Zhan, Ling Tu, et al. "Polyarylene Ether Nitrile-Based High-k Composites for Dielectric Applications." International Journal of Polymer Science 2018 (July 10, 2018): 1–15. http://dx.doi.org/10.1155/2018/5161908.

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Flexible polymer-based composites exhibiting high dielectric constant as well as low dielectric loss have been intensively investigated for their potential utilization in electronics and electricity industry and energy storage. Resulting from the polar -CN on the side chain, polyarylene ether nitrile (PEN) shows relatively high dielectric constant which has been extensively investigated as one of the hot spots as dielectric materials. However, the dielectric constant of PEN is still much lower than the ceramic dielectrics such as BaTiO3, TiO2, and Al2O3. In this review, recent and in-progress

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7

Lee, Byoung Hun, and Rino Choi. "Dielectric Breakdown Characteristics of Stacked High-k Dielectrics." ECS Transactions 19, no. 2 (2019): 289–99. http://dx.doi.org/10.1149/1.3122097.

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8

BERSUKER, GENNADI, BYOUNG HUN LEE, and HOWARD R. HUFF. "Novel Dielectric Materials for Future Transistor Generations." International Journal of High Speed Electronics and Systems 16, no. 01 (2006): 221–39. http://dx.doi.org/10.1142/s012915640600362x.

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Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k

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9

Hall, Stephe, Octavian Buiu, Ivona Z. Mitrovic, Yi Lu, and William M. Davey. "Review and perspective of high-k dielectrics on silicon." Journal of Telecommunications and Information Technology, no. 2 (June 25, 2023): 33–43. http://dx.doi.org/10.26636/jtit.2007.2.806.

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The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics, which are compounded by electron trapping phenomena in the microsecond regime. Nearly all practical methods of preparation result in a thin interfacial layer generally of the form SiOx or a mixed oxide between Si and the high-k so that the extraction of the dielectric constant is complicated and values must be qualified by error analysis. The dis

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10

Modes, Christina, Stefan Malkmus, and Frieder Gora. "High K Low Loss Dielectrics Co-Fireable with LTCC." Active and Passive Electronic Components 25, no. 2 (2002): 141–45. http://dx.doi.org/10.1080/08827510212346.

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Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way. Heraeus has implemented compatible high permitivity and low loss dielectrics with NPO performance into modified Heraeus CT700 low temperature co-fired ceramic tape system. The majority of commercially available microwave dielectrics show increasing firing temperatures>200 °Cwhich make them incompatible with Ag metallizations or show high die

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11

Ghule, B., and M. Laad. "Polymer Composites with Improved Dielectric Properties: A Review." Ukrainian Journal of Physics 66, no. 2 (2021): 166. http://dx.doi.org/10.15407/ujpe66.2.166.

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Materials exhibiting high dielectric constant (k) values find applications in capacitors, gate dielectrics, dielectric elastomers, energy storage device, while materials with low dielectric constant are required in electronic packaging and other such applications. Traditionally, high k value materials are associated with high dielectric losses, frequency-dependent dielectric behavior, and high loading of a filler. Materials with low k possess a low thermal conductivity. This creates the new challenges in the development of dielectric materials in both kinds of applications. Use of high dielect

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12

Alshanbari, Reem, Oliver Durnan, Huaiqian Guo, Moshe Eizenberg та Ioannis Kymissis. "P‐30: Effect of High‐k Oxide Materials on Amorphous Indium Gallium Zinc Oxide (α‐IGZO) Channel in Top Gate Field Effect Transistors". SID Symposium Digest of Technical Papers 55, № 1 (2024): 1471–73. http://dx.doi.org/10.1002/sdtp.17829.

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The gate dielectric plays a significant role in improving the electrical performance of field‐effect transistors. Here, we integrated high‐k and low‐k bilayer gate dielectrics with (~10 nm) α‐IGZO FETs. Our results show that HfO2/SiO2 gated devices provide high electron mobility due to higher carrier concentration and lower trap density at the semiconductor‐gate dielectric interface.

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13

Gomeniuk, Y. V. "Current transport mechanisms in metal – high-k dielectric – silicon structures." Semiconductor Physics Quantum Electronics and Optoelectronics 15, no. 2 (2012): 139–46. http://dx.doi.org/10.15407/spqeo15.02.139.

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14

Wang, Yuxin, Xingyi Huang, Tao Li, et al. "Novel crosslinkable high-k copolymer dielectrics for high-energy-density capacitors and organic field-effect transistor applications." J. Mater. Chem. A 5, no. 39 (2017): 20737–46. http://dx.doi.org/10.1039/c7ta06005j.

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Novel dielectric materials using crosslinkable high-kcopolymers were prepared with high energy density and high efficiency. They were also applied as OFET gate dielectrics to achieve low-voltage operation.

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15

Albeltagi, Ahmed, Katherine Gallegos-Rosas, and Caterina Soldano. "High-k Fluoropolymers Dielectrics for Low-Bias Ambipolar Organic Light Emitting Transistors (OLETs)." Materials 14, no. 24 (2021): 7635. http://dx.doi.org/10.3390/ma14247635.

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Organic light emitting transistors (OLETs) combine, in the same device, the function of an electrical switch with the capability of generating light under appropriate bias conditions. In this work, we demonstrate how engineering the dielectric layer based on high-k polyvinylidene fluoride (PVDF)-based polymers can lead to a drastic reduction of device driving voltages and the improvement of its optoelectronic properties. We first investigated the morphology and the dielectric response of these polymer dielectrics in terms of polymer (P(VDF-TrFE) and P(VDF-TrFE-CFE)) and solvent content (cyclop

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16

Siddiqui, Amna, Rabia Yasmin Khosa, and Muhammad Usman. "High-k dielectrics for 4H-silicon carbide: present status and future perspectives." Journal of Materials Chemistry C 9, no. 15 (2021): 5055–81. http://dx.doi.org/10.1039/d0tc05008c.

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17

Shalimova, M. B., V. S. Afanaskov, and E. N. Khavdey. "MECHANISMS OF DEGRADATION OF ELECTROPHYSICAL CHARACTERISTICS OF MOS-STRUCTURES WITH HIGH-K DIELECTRICS." Vestnik of Samara University. Natural Science Series 19, no. 3 (2017): 107–19. http://dx.doi.org/10.18287/2541-7525-2013-19-3-107-119.

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Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of MOS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-k dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.

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18

Satake, Hideki, and Takeshi Yamaguchi. "Dielectric breakdown mechanism of Hf -silicate high-k gate dielectrics." IEEJ Transactions on Sensors and Micromachines 124, no. 5 (2004): 167–71. http://dx.doi.org/10.1541/ieejsmas.124.167.

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19

SU, WEITAO, QIUHUI ZHUANG, DEXUAN HUO, and BIN LI. "DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS." Surface Review and Letters 19, no. 06 (2012): 1250064. http://dx.doi.org/10.1142/s0218625x12500643.

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The continuous downscaling of metal oxide semiconductor field effect transistors (MOSFET) on silicon, germanium, GaAs , etc. still demands the creation of new high-k dielectrics with even better material performance. In this research, a new ternary high-k dielectric film, LaSmO3 , is deposited using electron-beam evaporation. The structure and high temperature interfacial thermal stabilities are investigated by X-ray diffraction (XRD), X-ray photon electronic spectra (XPS), infrared attenuated total reflection (ATR) and time of flight second ion mass spectroscopy (ToF-SIMS). The band gap and b

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20

Roy, Sandip K., Konstantin V. Vassilevski, Christopher J. O'Malley, Nick G. Wright, and Alton B. Horsfall. "Discriminating High k Dielectric Gas Sensors." Materials Science Forum 778-780 (February 2014): 1058–62. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1058.

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High temperature gas sensors for the detection of harmful gases under extreme conditions have been demonstrated. Here, we show the detection and selective response of two SiC based MIS sensor structures with HfO2and TiO2high κ dielectric layers to two different hydrogen containing gases. The structures utilise a Pt catalytic gate contact and a high-κ dielectric that was grown on a thin SiO2layer, which was thermally grown on the Si face of epitaxial 4H SiC. The chemical characteristics of MIS capacitors have been studied in N2, O2, H2and CH4ambients at 573K. The data show a positive flatband v

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21

Smirnova, Tamara P., Fedor A. Kuznetsov, Lubov Yakovkina, et al. "HfO2-High-k Dielectric for Nanoelectronics." ECS Transactions 25, no. 8 (2019): 875–80. http://dx.doi.org/10.1149/1.3207680.

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22

Hossain, M. E., S. Y. Liu, S. O’Brien, and J. Li. "Modeling of high-k dielectric nanocomposites." Acta Mechanica 225, no. 4-5 (2014): 1197–209. http://dx.doi.org/10.1007/s00707-013-1067-z.

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23

Novkovski, Nenad. "Physical modeling of electrical and dielectric properties of high-k ta2o5 based MOS capacitors on silicon." Facta universitatis - series: Electronics and Energetics 27, no. 2 (2014): 259–73. http://dx.doi.org/10.2298/fuee1402259n.

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In this paper we present an integral physical model for describing electrical and dielectric properties of MOS structures containing dielectric stack composed of a high-k dielectric (with emphasize on pure and doped Ta2O5) and an interfacial silicon dioxide or silicon oxynitride layer. Based on the model, an equivalent circuit of the structure is proposed. Validity of the model was demonstrated for structures containing different metal gates (Al, Au, Pt, W, TiN, Mo) and different Ta2O5 based high-k dielectrics, grown of bare or nitrided silicon substrates. The model describes very well the I-V

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24

Dąbrowski, Jaroslaw, Seiichi Miyazaki, S. Inumiya, et al. "The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics." Materials Science Forum 608 (December 2008): 55–109. http://dx.doi.org/10.4028/www.scientific.net/msf.608.55.

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Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents

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Wada, Masayuki, Sylvain Garaud, I. Ferain, et al. "Impact of Galvanic Corrosion on Metal Gate Stacks." Solid State Phenomena 145-146 (January 2009): 215–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.215.

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High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In order to alleviate the Fermi-level pinning issue and to enhance the CET (Capacitive Effective Thickness) by generating the depletion layer in poly-Silicon gate, metal gate electrodes with proper work functions (WF) have to be used on the high-k dielectrics.

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26

Zhao, Chun, C. Z. Zhao, M. Werner, S. Taylor, and P. R. Chalker. "Advanced CMOS Gate Stack: Present Research Progress." ISRN Nanotechnology 2012 (February 9, 2012): 1–35. http://dx.doi.org/10.5402/2012/689023.

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The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k). When the SiO2 gate thickness is reduced below 1.4 nm, electron tunneling effects and high leakage currents occur which present serious obstacles for device reliability. In recent years, various alternative gate dielectrics have been researched. Following the introduction of HfO2 into the 45 nm process by Intel in 2007, the screening and selection of high-k gate stacks, understanding their properties, an

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Sudheendran, K., and K. C. James Raju. "Microwave Characterization Techniques for High K Thin Films." Key Engineering Materials 421-422 (December 2009): 73–76. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.73.

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Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin

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28

Gomeniuk, Y. Y., Y. V. Gomeniuk, A. Nazarov, V. S. Lysenko, H. J. Osten, and A. Laha. "Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon." Advanced Materials Research 276 (July 2011): 167–78. http://dx.doi.org/10.4028/www.scientific.net/amr.276.167.

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The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2

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Brezeanu, M., M. Badila, Gheorghe Brezeanu, et al. "Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics." Materials Science Forum 527-529 (October 2006): 1087–90. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1087.

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A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the breakdown voltage for both SiC JBDs and SBDs, obtained by using high-k dielectrics. A study regarding the influence of the dielectric permittivity and thickness on the off-state performances of the diodes is included. It is shown that Si3N4 is to be preferred to SiO2 for the dielectric ramp. Termination efficiencies up to 96% are reported.

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30

Tawade, Bhausaheb V., Ikeoluwa E. Apata, Nihar Pradhan, Alamgir Karim, and Dharmaraj Raghavan. "Recent Advances in the Synthesis of Polymer-Grafted Low-K and High-K Nanoparticles for Dielectric and Electronic Applications." Molecules 26, no. 10 (2021): 2942. http://dx.doi.org/10.3390/molecules26102942.

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The synthesis of polymer-grafted nanoparticles (PGNPs) or hairy nanoparticles (HNPs) by tethering of polymer chains to the surface of nanoparticles is an important technique to obtain nanostructured hybrid materials that have been widely used in the formulation of advanced polymer nanocomposites. Ceramic-based polymer nanocomposites integrate key attributes of polymer and ceramic nanomaterial to improve the dielectric properties such as breakdown strength, energy density and dielectric loss. This review describes the “grafting from” and “grafting to” approaches commonly adopted to graft polyme

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31

Jung, Hakkee. "Analytical models of threshold voltage and drain induced barrier lowering in junctionless cylindrical surrounding gate (JLCSG) MOSFET using stacked high-<i>k</i> oxide." AIMS Electronics and Electrical Engineering 6, no. 2 (2022): 108–23. http://dx.doi.org/10.3934/electreng.2022007.

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<abstract> <p>We proposed the analytical models to analyze shifts in threshold voltage and drain induced barrier lowering (DIBL) when the stacked SiO<sub>2</sub>/high-<italic>k</italic> dielectric was used as the oxide film of Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFET. As a result of comparing the results of the presented model with those of TCAD, it was a good fit, thus proving the validity of the presented model. It could be found that the threshold voltage increased, but DIBL decreased by these models as the high-<italic>k</italic&

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Liu, Jun, Xin Xiong, Han Li, et al. "Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors." Micromachines 15, no. 12 (2024): 1465. https://doi.org/10.3390/mi15121465.

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High-k metal oxides are gradually replacing the traditional SiO2 dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution method and analyzed the role of each metal oxide in the system by characterizing the film properties. On this basis, we found optimal combination of (AlGaTiYZr)Ox with the best dielectric properties, exhibiting a low leakage current of 1.2 × 10−8 A/cm2 @1 MV/cm and a high dielectric constant, while the film’s visible transmittance is more than 90%. Bas

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Dixit, Ankita, and Navneet Gupta. "Simulations of the CNFETs using different high-k gate dielectrics." Bulletin of Electrical Engineering and Informatics 9, no. 3 (2020): 943–49. http://dx.doi.org/10.11591/eei.v9i3.1784.

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In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49nm and the CNFETs have been fabricated with the CNT diameter of ~1.5nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2.

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Khomenkova, Larysa, Pascal Normand, Fabrice Gourbilleau, Abdelilah Slaoui, and Caroline Bonafos. "High-k MNOS-Like Stacked Dielectrics for Non-Volatile Memory Application." Journal of Nano Research 39 (February 2016): 121–33. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.121.

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Charge-trapping memories such as SONOS and MONOS have attracted considerable attention as promising alternatives for next-generation flash memories due to dielectric layer’s scalability, process simplicity, power economy, operation versatility. Nevertheless, the continued miniaturization of the devices forces an application of high-k dielectrics. In this work high-k stacked dielectric structures based on the combination of Hf-based and SiNx materials were fabricated. Their structural and electrical properties versus deposition conditions are studied by means of FTIR-ATR and high-resolution TEM

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35

Feng, Yudi, Ke Jin, Jia Guo, and Changchun Wang. "All-carbocycle hydrocarbon thermosets with high thermal stability and robust mechanical strength for low-k interlayer dielectrics." Polymer Chemistry 12, no. 33 (2021): 4812–21. http://dx.doi.org/10.1039/d1py00877c.

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Two kinds of hydrocarbon precursors were synthesized and cured at elevated temperatures to give cross-linked all-aliphatic/aromatic-ring polymers with a low dielectric constant for next-generation interlayer dielectrics.

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Ankita, Dixit, and Gupta Navneet. "Simulations of the CNFETs using different high-k gate dielectrics." Bulletin of Electrical Engineering and Informatics 9, no. 3 (2020): 943–49. https://doi.org/10.11591/eei.v9i3.1784.

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In this paper we presented the analysis of carbon nanotube field effect transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49 nm and the CNFETs have been fabricated with the CNT diameter of ~1.5 nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO

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Zhang, Jiacheng, Zi Wang, Guoqing Jiang, Huachao Wei, Zongxi Zhang, and Junwen Ren. "Enhanced Thermal Conductivity and Dielectric Properties of Epoxy Composites with Fluorinated Graphene Nanofillers." Nanomaterials 13, no. 16 (2023): 2322. http://dx.doi.org/10.3390/nano13162322.

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The demand for high-performance dielectrics has increased due to the rapid development of modern electric power and electronic technology. Composite dielectrics, which can overcome the limitations of traditional single polymers in thermal conductivity, dielectric properties and mechanical performance, have received considerable attention. In this study, we report a multifunctional nanocomposite material fabricated by blending fluorinated graphene (F-graphene) with epoxy resin. The F-graphene/epoxy composite exhibited a high thermal conductivity of 0.3304 W·m−1·K−1 at a low filler loading of 1.

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WU, De-Qi. "Development of High-K Gate Dielectric Materials." Journal of Inorganic Materials 23, no. 5 (2008): 865–71. http://dx.doi.org/10.3724/sp.j.1077.2008.00865.

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Losurdo, Maria, Maria M. Giangregorio, Giovanni Bruno, et al. "Er2O3 as a high-K dielectric candidate." Applied Physics Letters 91, no. 9 (2007): 091914. http://dx.doi.org/10.1063/1.2775084.

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MacKenzie, M., A. J. Craven, D. W. McComb, and S. De Gendt. "Advanced Nanoanalysis of High-k Dielectric Stacks." Journal of The Electrochemical Society 153, no. 9 (2006): F215. http://dx.doi.org/10.1149/1.2218758.

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BORSTLAP, D., J. SCHUBERT, W. ZANDER, A. OFFENHAUSSER, and S. INGEBRANDT. "High-k Dielectric Layers for Bioelectronic Applications." IEICE Transactions on Electronics E91-C, no. 12 (2008): 1894–98. http://dx.doi.org/10.1093/ietele/e91-c.12.1894.

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Min, K. S., C. Park, C. Y. Kang, et al. "Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric." Solid-State Electronics 82 (April 2013): 82–85. http://dx.doi.org/10.1016/j.sse.2012.11.008.

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Osada, Minoru, and Takayoshi Sasaki. "New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, CICMT (2011): 000072–77. http://dx.doi.org/10.4071/cicmt-2011-tp11.

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We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k &gt; 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielect

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Shimoga, Ganesh, and Sang-Youn Kim. "High-k Polymer Nanocomposite Materials for Technological Applications." Applied Sciences 10, no. 12 (2020): 4249. http://dx.doi.org/10.3390/app10124249.

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Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites

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LUCOVSKY, GERALD. "PART I: BOND STRAIN AND DEFECTS AT Si-SiO2 AND DIELECTRIC INTERFACES IN HIGH-k GATE STACKS." International Journal of High Speed Electronics and Systems 16, no. 01 (2006): 241–61. http://dx.doi.org/10.1142/s0129156406003631.

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The performance and reliability of aggressively-scaled field effect transistors that include deposited high-k dielectrics and interfacial SiO 2 buffer layers are determined in large part by electronically-active defects and defect precursors at the Si - SiO 2, and internal SiO 2-high-k dielectric interfaces. A crucial aspect of reducing interfacial defects and defect precursors is associated with bond-strain driven bonding self-organizations that take place during high temperature annealing in inert ambients. These interfacial self-organizations, and intrinsic interface defects are addressed t

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Borkar, Hitesh, Arun Barvat, Prabir Pal, A. K. Shukla, J. J. Pulikkotil, and Ashok Kumar. "Polaron-electron assisted giant dielectric dispersion in SrZrO3 high-k dielectric." Journal of Applied Physics 119, no. 21 (2016): 214101. http://dx.doi.org/10.1063/1.4952710.

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Huang, Ting, Yan Zhang, Haonan Liu, et al. "Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition." Semiconductor Science and Technology 37, no. 2 (2021): 025005. http://dx.doi.org/10.1088/1361-6641/ac3e05.

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Abstract In this work, we systematically investigated the carrier transport of hysteresis-free amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) incorporating high-k (HfO2) x (Al2O3) y gate dielectrics with different composition and permittivity by atomic layer deposition. A dielectric surface morphology dominated interface scattering carrier transport mechanism is demonstrated, and the effect of the dielectric polarization and the interface states on the carrier mobility is discovered in TFT devices gated by high quality dielectrics with negligible charge trap effect. Accordingly, an a-

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Irokawa, Yoshihiro, Mari Inoue, Toshihide Nabatame, and Yasuo Koide. "Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al₂O₃, HfO₂, or Hf_0.57Si_0.43O_x Gate Dielectrics." ECS Journal of Solid State Science and Technology 11, no. 8 (2022): 085010. http://dx.doi.org/10.1149/2162-8777/ac8a70.

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The effect of hydrogen on GaN metal-oxide-semiconductor (MOS) capacitors with Al2O3, HfO2, or Hf0.57Si0.43O x gate dielectrics was studied using capacitance–voltage (C–V) measurements. Hydrogen exposure shifted all the C–V curves toward the negative bias direction, and the hydrogen response of the devices was reversible. When the hydrogen-containing ambient atmosphere was changed to N2, the C–V characteristics were found to gradually revert to the initial values in N2. Application of a reverse gate bias accelerated the reversion compared with that in the absence of a bias, indicating that hydr

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Shukla, Prabhat, and Swapnali Makdey. "Simulation of Silicon Nanowire Field Effect Transistor for Different High k Dielectric Material." International Journal of Scientific Engineering and Research 5, no. 2 (2017): 10–12. https://doi.org/10.70729/ijser151218.

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Shin, Jaemin, Tyafur Pathan, Guanyu Zhou, and Christopher L. Hinkle. "(Invited) Bulk Traps in Layered 2D Gate Dielectrics." ECS Transactions 113, no. 2 (2024): 25–33. http://dx.doi.org/10.1149/11302.0025ecst.

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In this work, we synthesize new 2D layered dielectrics and fabricate metal-insulator-metal (MIM) capacitors to determine their viability for scaled gate dielectrics (ZrNCl, HfNCl, BiOCl, and Mg(OH)2) in transition metal dichalcogenide-based transistors. While successful synthesis and fabrication was demonstrated, the properties of the dielectrics were decidedly underwhelming for device applications. The dielectric constants, in most cases, were only marginally better than SiO2 (k = 4-6), the leakage currents were too high due to poor band offsets, and most importantly, the bulk trap density, a

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