Relevant bibliographies by topics / High-k material

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'High-k material'

Author: Grafiati
Published: 4 June 2021
Last updated: 10 March 2023

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Journal articles on the topic "High-k material"

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Susarla, Sandhya, Thierry Tsafack, Peter Samora Owuor, Anand B. Puthirath, Jordan A. Hachtel, Ganguli Babu, Amey Apte, et al. "High-K dielectric sulfur-selenium alloys." Science Advances 5, no. 5 (May 2019): eaau9785. http://dx.doi.org/10.1126/sciadv.aau9785.

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Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.
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Shimoga, Ganesh, and Sang-Youn Kim. "High-k Polymer Nanocomposite Materials for Technological Applications." Applied Sciences 10, no. 12 (June 20, 2020): 4249. http://dx.doi.org/10.3390/app10124249.

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Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites with high dielectric constant (high-k) properties are widely applicable in the technological sectors including gate dielectrics, actuators, infrared detectors, tunable capacitors, electro optic devices, organic field-effect transistors (OFETs), and sensors. In this short colloquy, we provided an overview of a few remarkable high-k polymer nanocomposites of material science interest from recent decades.
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Dixit, Ankita, and Navneet Gupta. "Simulations of the CNFETs using different high-k gate dielectrics." Bulletin of Electrical Engineering and Informatics 9, no. 3 (June 1, 2020): 943–49. http://dx.doi.org/10.11591/eei.v9i3.1784.

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In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49nm and the CNFETs have been fabricated with the CNT diameter of ~1.5nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2. It was also observed that as thickness of gate dielectric material reduces, drain current of CNFET increases. The outcomes of this study matches with the analytical results and hence confirm the results
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Kumar, Rajesh, and Rajesh Mehra. "Impact Analysis of DGMOSFET using High-k Dielectric material." International Journal of Engineering Trends and Technology 34, no. 4 (April 25, 2016): 179–83. http://dx.doi.org/10.14445/22315381/ijett-v34p237.

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Jamison, Paul C., John Massey, Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, P. J. Chen, Eric Liu, et al. "BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material." ECS Meeting Abstracts MA2020-01, no. 22 (May 1, 2020): 1318. http://dx.doi.org/10.1149/ma2020-01221318mtgabs.

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Jamison, Paul C., John Massey, Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, P. J. Chen, Eric Liu, et al. "BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material." ECS Transactions 97, no. 3 (May 1, 2020): 81–92. http://dx.doi.org/10.1149/09703.0081ecst.

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Ehrke, U., A. Sears, L. Alff, and D. Reisinger. "High resolution depth profiling of thin STO in high-k oxide material." Applied Surface Science 231-232 (June 2004): 598–602. http://dx.doi.org/10.1016/j.apsusc.2004.03.120.

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Hardy, A., S. Van Elshocht, C. Adelmann, J. A. Kittl, S. De Gendt, M. Heyns, J. D’Haen, M. D’Olieslaeger, M. K. Van Bael, and H. Van den Rul. "Strontium niobate high-k dielectrics: Film deposition and material properties." Acta Materialia 58, no. 1 (January 2010): 216–25. http://dx.doi.org/10.1016/j.actamat.2009.09.006.

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Bikshalu, K., V. S. K. Reddy, P. C. S. Reddy, and K. V. Rao. "High-performance Carbon Nanotube Field Effect Transistors with High k Dielectric Gate Material." Materials Today: Proceedings 2, no. 9 (2015): 4457–62. http://dx.doi.org/10.1016/j.matpr.2015.10.048.

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Li, Zhanqiang, Junfeng Zheng, Wenjuan Zhang, Yong Zheng, Weijun Zhao, Liyan Xue, Fan Yang, and Heng Chen. "A Promising High-Entropy Thermal Barrier Material with the Formula (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12." Materials 15, no. 22 (November 15, 2022): 8079. http://dx.doi.org/10.3390/ma15228079.

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YSZ has been widely used as a TBC material, but its phase change at high temperatures limits its development, thus the need for developing new thermal barrier materials resistant to high temperatures. Rare-earth aluminate ceramics with a garnet structure (Yb3Al5O12) have been considered as a potential thermal barrier material. The melting point of Yb3Al5O12 is 2000 °C, which has a potential high temperature application prospect. However, Yb3Al5O12 has lower thermal expansion and higher thermal conductivity than YSZ, which is a widely employed thermal barrier coating (TBC) material. To overcome these obstacles, (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12, a high-entropy ceramic, was prepared by a solid-state reaction and pressureless sintering. The thermal conductivity of the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 was 3.48 W/(m·K) at 300 K, approximately 25.48% lower than that of the Yb3Al5O12 (4.67 W/(m·K)). The thermal expansion coefficient of the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 was 9.28 × 10−6 K−1 at 673-1273 K, approximately 18.52% higher than that of the Yb3Al5O12 (7.83 × 10−6 K−1, 673-1273 K). When the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 was annealed at 1550 °C for 7 days, its average grain size only increased from 0.7 μm to 1.3 μm. Moreover, the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 exhibited better chemical stability and a lower grain growth rate than the Yb3Al5O12. This study reveals that (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 is a promising candidate for the future generation of thermal barrier materials.
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Dissertations / Theses on the topic "High-k material"

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Chen, B. P. T. "Deposition and material characterisation of alternative high-K gate oxides." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597522.

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This thesis investigates the relation between the growth process, structure and properties of three potential high dielectric constant (high-K) gate oxides as replacements for silicon dioxide (SiO2) in Complementary Metal-Oxide-Semiconductor (CMOS) process. Production of high quality high-K gate oxides requires optimisation of the deposition conditions. Zirconium dioxide (ZrO2), yttria-stabilised ZrO2 (YSZ) and hafnium oxide (HfO2) films have been deposited using reactive radio-frequency (RF) magnetron sputtering in an Oxygen (O2)/ Argon (Ar) mixture at room temperature. The as-deposited film properties are quite comparable to those reported in the literature. ZrO2 exhibits a refractive index (R.I.) of 2.03, a bandgap of 5.8 eV, a dielectric constant of 26.2 and average breakdown field strength of 5.2 MV/cm. YSZ has a R.I. of 2.19, a bandgap of 5.6 eV, a dielectric constant of 27 and average breakdown field strength of 5.4 MV/cm. HfO2 possesses a R.I. of 2.1, a bandgap of 6 eV, a dielectric constant of 25 and average breakdown field strength of 5.4 MV/cm. Although the film qualities of all three oxide systems are similar, the research demonstrated that HfO2 is a better candidate to succeed thermal oxide as alternative gate dielectrics because the leakage current of HfO2 is at least seven orders in magnitude lower than that of using pure silicon oxide with identical equivalent oxide thickness (EOT). Electron Spin Resonance (ESR) studies of ZrO2 and YSZ films showed that defect trapping centres existed in the dielectrics. Initial investigation on potential metal nitride electrodes showed that surface oxidation is a major concern. This may be caused by exposure to air during the transfer to X-ray Photoelectron Spectroscopy (XPS) system or problems in the deposition procedure. The Ultraviolet Photoelectron Spectroscopy (UPS) analysis of the metal nitride reflects the material dependence of the work function and may be used as a guide in the future development of a suitable metal electrode.
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Wang, Jiahui. "High-K Material Based Leaky-wave Antenna Design, Implementation, and Manufacture." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1347582062.

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Li, Wenmei. "CHARACTERIZATION OF HIGH-K GATE STACKS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS." NCSU, 2001. http://www.lib.ncsu.edu/theses/available/etd-20010202-100109.

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The purpose of this research has been to use off-line characterization techniques to establish material-specific properties of gate-stack constituents (i.e., high-k dielectric stacks and electrodes) and complete gate-stack structures. Hence, the characterization methodologies were established to evaluate high-k dielectrics at various processing levels, which, in part, determine the final characteristics of an advanced gate-stack device. Material systems that were investigated include: Al-O, Hf-Si-O, Zr-Si-O, Ti-O, Ta-O and Sr-Ti-O. Various physical and electrical characterization techniques were used to establish fundamental understandings of the materials selected, thin-film growth/deposition processes, and gate-stack structures. General conclusions for stable and unstable gate-dielectric materials have been establishedregarding the presence of a problematic interfacial layer at the Si/dielectric interface, graded dielectric layers, and the stability of gate electrodes on high-k dielectrics.The nanometer-scale chemistry of a gate-stack capacitor whose expected structure is Si/SiOxNy/Ta2O5/TiN/Al was studied by high-resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. Elemental profiles with near-atomic-level resolution for Si, Ti, N, Al, and O demonstrate that the device structure deviates drastically from the expectation and is chemically complex.It is concluded that the graded distribution of certain elements across the gate-stack capacitor completely precludes a band-structure model that assumes abrupt interfaces and chemically discrete layers. This study impacted on subsequent interpretations of flatband voltage extractions and electrical degradation following backside metallization/postmetallization annealing for capacitors whose dielectric-stack was based on Ta-O.Detailed and extensive electrical characterizations of Pt/SiOx/Sr-Ti-O/Si MOS capacitors were carried out to investigate reliability issues in a bi-layer gate dielectric. Based on these studies, models are proposed to describe the carrier transport and dielectric degradation for a Sr-Ti-O capacitor. It is concluded that conduction is dominated by Frenkel-Poole emission from mid-gap trap levels. The trap barrier height is estimated to be 1.51eV. A model based on the atomic and electronic structure of oxygen vacancies can account for the reported leakage-current characteristics. In addition, it is tentatively proposed that anode-hole injection and hole trapping control the dielectric degradation under gate injection.

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Xu, Toby Ge. "Material and array design for CMUT based volumetric intravascular and intracardiac ultrasound imaging." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54861.

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Recent advances in medical imaging have greatly improved the success of cardiovascular and intracardiac interventions. This research aims to improve capacitive micromachined ultrasonic transducers (CMUT) based imaging catheters for intravascular ultrasound (IVUS) and intra-cardiac echocardiography (ICE) for 3-D volumetric imaging through integration of high-k thin film material into the CMUT fabrication and array design. CMUT-on-CMOS integration has been recently achieved and initial imaging of ex-vivo samples with adequate dynamic range for IVUS at 20MHz has been demonstrated; however, for imaging in the heart, higher sensitivities are needed for imaging up to 4-5 cm depth at 20MHz and deeper at 10MHz. Consequently, one research goal is to design 10-20MHz CMUT arrays using integrated circuit (IC) compatible micro fabrication techniques and optimizing transducer performance through high-k dielectrics such as hafnium oxide (HfO2). This thin film material is electrically characterized for its dielectric properties and thermal mechanical stress is measured. Experiments on test CMUTs show a +6dB improvement in receive (Rx) sensitivity, and +6dB improvement in transmit sensitivity in (Pa/V) as compared to a CMUT using silicon nitride isolation (SixNy) layer. CMUT-on-CMOS with HfO2 insulation is successfully integrated and images of a pig-artery was successfully obtained with a 40dB dynamic range for 1x1cm2 planes. Experimental demonstration of side looking capability of single chip CMUT on CMOS system based FL dual ring arrays supported by large signal and FEA simulations was presented. The experimental results which are in agreement with simulations show promising results for the viability of using FL-IVUS CMUT-on-CMOS device with dual mode side-forward looking imaging. Three dimensional images were obtained by the CMUT-on-CMOS array for both a front facing wire and 4 wires that are placed perpendicular to the array surface and ~4 mm away laterally. For a novel array design, a dual gap, dual frequency 2D array was designed, fabricated and verified against the large signal model for CMUTs. Three different CMUT element geometries (2 receive, 1 transmit) were designed to achieve ~20MHz and ~40MHz bands respectively in pulse-echo mode. A system level framework for designing CMUT arrays was described that include effects from imaging design requirements, acoustical cross-talk, bandwidths, signal-to-noise (SNR) optimization and considerations from IC limitations for pulse voltage. Electrical impedance measurements and hydrophone measurements comparisons between design and experiment show differences due to inaccuracies in using SixNy homogenous material in simulation compared to fabricated thin-film stacks (HfO2-AlSi-SixNy). It is concluded that for “thin” membranes the effect of stiffness and mass of HfO2 and AlSi (top electrode) cannot be ignored in the simulation. Also, it is understood that aspect ratio (width to height) <10 will have up to 15% error for center frequency predicted in air when the thin-plate approximation is used for modelling the bending stiffness of the CMUT membrane.
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Guerrero, Enriquez Rubén Dario. "Etude des filtres miniatures LTCC High K en bandes L&S." Thesis, Brest, 2016. http://www.theses.fr/2016BRES0036/document.

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Dans les systèmes actuels de communication, qu’ils soient terrestre ou spatial, qu’ils soient mobile ou fixe, il y a un réel intérêt à développer des front-ends radiofréquences et hyperfréquences miniatures et performants. Ceci s’applique en particulier aux dispositifs de filtrage où l’encombrement et les facteurs de qualité sont clairement antagonistes. Pour les bandes de fréquences basses aux alentours du GHz, les longueurs d’onde restent encore importantes, rendant difficiles les efforts de miniaturisation. D’autre part il faut aussi s’assurer que ces filtres viendront s’interconnecter aisément avec les autres composants du système, notamment les actifs.Pour toutes ces raisons, le développement de structures de filtres multicouches utilisant des substrats à haute permittivité (εr = 68) selon une approche LTCC apparait comme une alternative intéressante. Elle peut en effet conduire à une réduction significative de l'empreinte (footprint) sans pour autant trop nuire aux performances électriques.Dans le cadre de ce travail, deux structures de filtres multicouches ont été développées pour répondre à des spécifications proposées en bandes L et S, par un équipementier du spatial. Ces filtres ont pour caractéristiques principales un haut niveau de rejection et des faibles pertes dans la bande passante. Pour atteindre les spécifications, un filtre SIW empilé verticalement et un filtre à stubs en court-circuit en configuration triplaque ont été étudiés. Le filtre SIW se distingue par un facteur de qualité élevé, ce qui entraîne des faibles pertes d’insertion et une bonne platitude. La solution à stub permet quant à elle de réduire l’encombrement mais au prix d’un impact sur les performances électriques. Dans les deux cas on tire parti de la souplesse offerte par la technologie LTCC, puisqu’elle offre finalement un degré de liberté supplémentaire, par rapport à une approche planaire classique. Si dans le cas SIW, c’est surtout l’architecture topologique qui a été étudiée finement pour pouvoir agencer et coupler douze cavités, dans le cas du filtre à stub une synthèse mettant à profit tous les degrés de liberté offerts a été spécifiquement développée.Compte tenu de la complexité des filtres, notamment à cause de l’ordre élevé et de la mise en oeuvre de murs « électriques » à partir d’arrangements de via spécifiques, une attention particulière doit être apportée lors des phases de simulation et d’optimisation. De plus la très forte permittivité du substrat ne permet pas d’utiliser de ligne 50 Ohms. Enfin les transitions constituent un point dur de l’exercice surtout dans le cas SIW.Cette thèse co-financée par le CNES (Centre National d'Etudes Spatiales) et Thales Alenia Space, était accompagnée par un projet R&T financé par le CNES. Le fondeur allemand Via Electronic avait en charge la fabrication des filtres
In current communication systems, whether terrestrial or spatial, whether fixed or mobile, there is a real interest in developing high performance miniature RF front-ends. This is applied in particular to filter devices, in which the size and the quality factors are clearly in conflict. For low frequency bands around the GHz, the wavelengths remain significant, making it difficult the miniaturization efforts. On the other hand, we must also ensure that these filters will be easily interconnected with other other system components, including active devices.For all these reasons, the development of multilayer filter structures using high permittivity substrates (Er = 68) in an LTCC approach is consolidated as an interesting alternative. It may lead to a significant footprint reduction without decreasing the electrical performances.As part of this work, two multilayer filter structures have been developed to meet the given specifications in L and S bands, given by a space manufacturer. These filters have as main features a high rejection level and low losses in the passband. To meet the specifications, a vertically stacked SIW filter and a short-circuited stubs filter in a stripline configuration were studied. The SIW filter is characterized by a high quality factor, which results in low insertion loss and good flatness. The stubs filter allows in contrast to reduce the footprint but at the price of impacting the electrical performance. In both cases we take advantage of the flexibility offered by the LTCC technology as it finally provides an additional freedom degree compared to a conventional planar approach. For the SIW filter, the topological architecture was studied and designed in detail, to be able to arrange and synthetize couplings between twelve cavities. In a similar way, for the stub filter a synthesis that takes profit of all the offered freedom degrees was developed.Given the filters complexity, especially due to the high order and the implementation of “electrical walls" based on specific vias patterns, a close attention must be paid during the simulation and optimization phase. In addition, the high permittivity substrate does not allow to conceive 50-Ohms lines. Finally, access transitions constitute a challenging task, especially for the SIW case.This thesis was co-funded by CNES (Centre National d'Etudes Spatiales) and Thales Alenia Space, and was accompanied by an R&T project funded by CNES. The German foundry Via Electronic was responsible for the filters fabrication
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Tewg, Jun-Yen. "Zirconium-doped tantalum oxide high-k gate dielectric films." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/1346.

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A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.
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Han, Lei. "Investigation of Gate Dielectric Materials and Dielectric/Silicon Interfaces for Metal Oxide Semiconductor Devices." UKnowledge, 2015. http://uknowledge.uky.edu/ece_etds/69.

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The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainly contributed to the scaling of the individual component. After decades of development, the scaling trend is approaching to its limitation, and there is urgent needs for the innovations of the materials and structures of the MOS devices, in order to postpone the end of the scaling. Atomic layer deposition (ALD) provides precise control of the deposited thin film at the atomic scale, and has wide application not only in the MOS technology, but also in other nanostructures. In this dissertation, I study rapid thermal processing (RTP) treatment of thermally grown SiO2, ALD growth of SiO2, and ALD growth of high-k HfO2 dielectric materials for gate oxides of MOS devices. Using a lateral heating treatment of SiO2, the gate leakage current of SiO2 based MOS capacitors was reduced by 4 order of magnitude, and the underlying mechanism was studied. Ultrathin SiO2 films were grown by ALD, and the electrical properties of the films and the SiO2/Si interface were extensively studied. High quality HfO2 films were grown using ALD on a chemical oxide. The dependence of interfacial quality on the thickness of the chemical oxide was studied. Finally I studied growth of HfO2 on two innovative interfacial layers, an interfacial layer grown by in-situ ALD ozone/water cycle exposure and an interfacial layer of etched thermal and RTP SiO2. The effectiveness of growth of high-quality HfO2 using the two interfacial layers are comparable to that of the chemical oxide. The interfacial properties are studied in details using XPS and ellipsometry.
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Genevès, Thomas. "Elaboration et caractérisation de couches ultra-minces de silicate de baryum en tant qu'oxyde de grille alternatif." Phd thesis, Université de Bourgogne, 2008. http://tel.archives-ouvertes.fr/tel-00359449.

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La miniaturisation des dispositifs élémentaires de la technologie CMOS impose le remplacement de l'oxyde de silicium pour l'élaboration de l'oxyde de grille. Par l'identification des conditions de formation du silicate de baryum au contact direct du substrat de silicium, cette étude a révélé un candidat potentiel. En premier lieu, la réaction entre Ba et SiO2 aboutissant à la formation d'un silicate de baryum a été mise en évidence in-situ par XPS et SR-PES. Dans un second temps, des films de silicate de baryum ont été élaborés par co-déposition de baryum et d'oxygène à une température de 580 °C. Des traitements thermiques sous vide ont montré que le silicate de baryum est stable jusqu'à 900 °C. Des analyses ex-situ par SIMS et MET ont révélé une interface abrupte avec le substrat. Enfin, un dispositif dédié à la réalisation de croissances par MOCVD a été développé. Il a permis de montrer la possibilité de former un silicate de baryum. La réaction est favorisée lorsque le dépôt se déroule à température élevée, sous une pression partielle d'oxygène.
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Sun, Xiao. "Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors." Thesis, Yale University, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3578458.

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As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology.

In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well as the challenges to characterize and passivate them. By modifying certain conventional gate admittance methods, both the fast and slow traps in Ge MOS gate stacks is investigated. In addition, a novel ac-transconductance method originated at Yale is introduced and demonstrated with several advanced transistors provided by collaborating groups, such as ultra-thin-body & box SO1 MOSFETs (CEA-LETI), InGaAs MOSFETs (IMEC, UT Austin, Purdue), and GaN MOS-HEMT (MIT).

By use of the aforementioned characterization techniques, several effective passivation techniques on high mobility substrates (Ge, InGaAs, GaSb, GeSn, etc.) are evaluated, including a novel Ba sub-monolayer passivation of Ge surface. The key factors that need to be considered in passivating high mobility substrates are revealed.

The techniques that we have established for characterizing traps in advanced field-effect transistors, as well as the knowledge gained about these traps by the use of these techniques, have been applied to the study of ionizing radiation effects in high-mobility-channel transistors, because it is very important to understand such effects as these devices are likely to be exposed to radiation-harsh environments, such as in outer space, nuclear plants, and during X-ray or UHV lithography. In this thesis, the total ionizing dose (TD) radiation effects of InGaAs-based MOSFETs and GaN-based MOS-HEMT are studied, and the results help to reveal the underlying mechanisms and inspire ideas for minimizing the TID radiation effects.

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Mutas, Sergej [Verfasser]. "Analysis of high-k materials with Local Electrode Atom Probe / Sergej Mutas." Aachen : Shaker, 2012. http://d-nb.info/1066198276/34.

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Books on the topic "High-k material"

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Tayal, Shubham, Parveen Singla, and J. Paulo Davim. High-k Materials in Multi-Gate FET Devices. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003121589.

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Michel, Houssa, ed. High-K gate dielectrics. Bristol: Institute of Physics, 2004.

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Frank, Blackwell, Hohmann Charles 1945-, Maehr Jane, and High/Scope Educational Research Foundation, eds. High/Scope K-3 curriculum series. Ypsilanti, Mich: High/Scope Press, 1991.

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International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (1st 2003 Salt Lake City, Utah). Physics and technology of high-k gate dielectrics I : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, Reliability, and Manufacturing Issues, held in Salt Lake City, Utah, October 20-24, 2002. Edited by Kar S. 1942-, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Pennington, NJ: Electrochemical Society, 2003.

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High-K Gate Dielectric Materials. Taylor & Francis Group, 2020.

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Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials. Taylor & Francis Group, 2022.

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High-K Materials in Multi-Gate FET Devices. Taylor & Francis Group, 2021.

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Davim, J. Paulo, Shubham Tayal, and Parveen Singla. High-K Materials in Multi-Gate FET Devices. Taylor & Francis Group, 2021.

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Tayal, Shubham. High-K Materials in Multi-gate Fet Devices. Taylor & Francis Group, 2021.

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Davim, J. Paulo, Shubham Tayal, and Parveen Singla. High-K Materials in Multi-Gate FET Devices. Taylor & Francis Group, 2021.

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Book chapters on the topic "High-k material"

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Sahu, Partha Pratim. "High-k Material Processing in CMOS VLSI Technology." In High-K Gate Dielectric Materials, 115–81. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-7.

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Rai, D. P. "Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications." In High-K Gate Dielectric Materials, 201–37. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-9.

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Maity, N. P., and Reshmi Maity. "Tunneling Current Density and Tunnel Resistivity: Application to High-k Material HfO2." In High-K Gate Dielectric Materials, 73–88. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-5.

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Maity, N. P., and Reshmi Maity. "Analysis of Interface Charge Density: Application to High-k Material Tantalum Pentoxide." In High-K Gate Dielectric Materials, 89–113. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-6.

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Usha, C., and P. Vimala. "Influence of High-k Material in Gate Engineering and in Multi-Gate Field Effect Transistor Devices." In High-k Materials in Multi-Gate FET Devices, 33–54. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003121589-3.

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Verma, Shekhar, and Suman Lata Tripathi. "Impact of temperature on 14 nm FINFET with high-K different oxide material." In Intelligent Circuits and Systems, 181–86. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003129103-30.

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Sarkar, Avijit Deb. "Analysis of Tunnelling Probability of Different High-K Material for Nanometer Thickness MOSFET Gate." In Lecture Notes in Electrical Engineering, 719–30. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2631-0_62.

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Banerjee, Pritha, Anup Sarkar, Dinesh Kumar Dash, and Subir Kumar Sarkar. "Performance Analysis of a Front High-K Gate Stack Dual-Material Tri-gate SON MOSFET." In Advances in Communication, Devices and Networking, 69–77. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7901-6_9.

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Kumar, Ningombam Ajit, Aheibam Dinamani Singh, and Nameirakpam Basanta Singh. "Exploring the Electrical Behavior of High-K Triple-Material Double-Gate Junctionless Silicon-on-Nothing MOSFETs." In Advances in Communication, Devices and Networking, 403–10. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-4932-8_45.

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Srivastava, Astha, Narendra Yadava, Mangal Deep Gupta, and R. K. Chauhan. "Study the Impact of ZrO2 High-k Dielectrics Gate Material on FD-SOI and PD-SOI MOSFET." In Lecture Notes in Electrical Engineering, 579–85. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0312-0_57.

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Conference papers on the topic "High-k material"

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Zschech, Ehrenfried, Pavel Potapov, Dmytro Chumakov, Hans-Juergen Engelmann, Holm Geisler, Valeriy Sukharev, Shinichi Ogawa, Paul S. Ho, and Ehrenfried Zschech. "Low-k Material Characterization with High Spatial Resolution: k Value and E Modulus." In Stress-induced Phenomena in Metallization. AIP, 2007. http://dx.doi.org/10.1063/1.2815774.

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Akasaka, Y., K. Miyagawa, A. Kariya, H. Shoji, T. Aoyama, S. Kume, M. Shigeta, et al. "Material Selection for the Metal Gate/High-k Transistors." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.b-5-1.

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Ioachim, A., R. Ramer, M. I. Toacsan, M. G. Banciu, L. Nedelcu, D. Ghetu, G. Stoica, G. Annino, M. Cassettari, and M. Martinelli. "High-K ZST material for microwave and millimeter wave applications." In Smart Materials, Nano-, and Micro-Smart Systems, edited by Alan R. Wilson. SPIE, 2004. http://dx.doi.org/10.1117/12.582428.

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Sujith, M. B., I. Flavia Princess Nesamani, V. Lakshmi Prabha, Anoob Eapen Chacko, and Rekha Divakaran. "Design optimization of segmented-channel MOSFET using high-K dielectric material." In 2014 International Conference on Electronics and Communication Systems (ICECS). IEEE, 2014. http://dx.doi.org/10.1109/ecs.2014.6892718.

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Vaidya, Dhirendra, Arjun Hegde, Saurabh Lodha, Swaroop Ganguly, Aneesh Nainani, Naomi Yoshida, and Theresa Guarini. "Integrated modeling platform for High-k/alternate channel material heterostructure stacks." In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292341.

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Bassi, Mohinder, Suman Lata Tripathi, and Shekhar Verma. "Analysis and Design of high-K Material Nanowire Transistor for Improved Performance." In 2019 IEEE 10th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON). IEEE, 2019. http://dx.doi.org/10.1109/iemcon.2019.8936244.

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Bourahla, Nassima, Baghdad Hadri, Nour El I. Boukortt, and Ahmed Bourahla. "Impact of High-k Dielectric Material on Ultra-Short-DG-FinFET Performance." In 2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS). IEEE, 2021. http://dx.doi.org/10.1109/telsiks52058.2021.9606360.

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Xing, Jianghao, Changzheng Sun, Bing Xiong, Jian Wang, Zhibiao Hao, Lai Wang, Yanjun Han, Hongtao Li, Jiadong Yu, and Yi Luo. "Membrane Multiple Quantum Well Electro-Optical Modulator Based on High-k Material." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/acpc.2021.t4a.179.

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Jung Han Kang, Chang Eun Kim, Myoung-Seok Kim, Jae-Min Myoung, and Ilgu Yun. "Material characterization and process modeling issues of high-k dielectrics for FET applications." In 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2009. http://dx.doi.org/10.1109/nmdc.2009.5167580.

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Smink, Alexander E. M., Maurits J. de Jong, Hans Hilgenkamp, Wilfred G. van der Wiel, and Jurriaan Schmitz. "Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material." In 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS). IEEE, 2020. http://dx.doi.org/10.1109/icmts48187.2020.9107901.

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Reports on the topic "High-k material"

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Bradford, Joe, Itzhak Shainberg, and Lloyd Norton. Effect of Soil Properties and Water Quality on Concentrated Flow Erosion (Rills, Ephermal Gullies and Pipes). United States Department of Agriculture, November 1996. http://dx.doi.org/10.32747/1996.7613040.bard.

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Concentrated flow erosion in rills, pipes, ephermal gullies, and gullies is a major contributor of downstream sedimentation. When rill or gullies form in a landscape, a 3- to 5-fold increase in soil loss commonly occurs. The balance between the erosive power of the flow and the erosion resistance of the bed material determines the rate of concentrated flow erosion. The resistance of the bed material to detachment depends primarily on the magnitude of the interparticle forces or cohesion holding the particles and aggregates together. The effect of soil properties on bed material resistance and concentrated flow erosion was evaluated both in the laboratory and field. Both rill erodibility and critical hydraulic shear were greater when measured in 9.0 m long rills under field conditions compared with laboratory mini-flumes. A greater hydraulic shear was required to initiate erosion in the field compared to the mini-flume because of the greater aggregate and clod size and stability. Once erosion was initiated, however, the rate of erosion as a function of hydraulic shear was greater under field conditions because of the greater potential for slaking upon wetting and the greater soil surface area exposed to hydraulic shear. Erosion tests under controlled laboratory conditions with the mini-flume allowed individual soil variables to be studied. Attempts to relate rill erosion to a group soil properties had limited success. When individual soil properties were isolated and studied separately or grouped separately, some trends were identified. For example, the effect of organic carbon on rill erodibility was high in kaolinitic soils, low in smectitic soils, and intermediate in the soils dominated by illite. Slow prewetting and aging increased the cohesion forces between soil particles and decreased rill erodibility. Quick prewetting increased aggregate slaking and increased erodibility. The magnitude of the effect of aging depended upon soil type. The effect of clay mineralogy was evaluated on sand/clay mixtures with montmorillonite (M), Illite (I), and kaolinite (K) clays. Montmorillonite/sand mixtures were much less erodible than either illite or kaolonite sand mixtures. Na-I and Na-K sand mixtures were more erodible than Ca-I and Ca-K due to increased strength from ionic bonding and suppression of repulsive charges by Ca. Na-M was less erodiblethan Ca-M due to increased surface resulting from the accessibility of internal surfaces due to Na saturation. Erodibility decreased when salt concentration was high enough to cause flocculation. This occurred between 0.001 mole L-1 and 0.01 mole L-1. Measuring rill erodibility in mini-flumes enables the measurement of cohesive forces between particles and enhances our ability to learn more about cohesive forces resisting soil detachment under concentrated water flow.
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Padget, C. D. W., D. R. M. Pattison, D. P. Moynihan, and O. Beyssac. Pyrite and pyrrhotite in a prograde metamorphic sequence, Hyland River region, SE Yukon: implications for orogenic gold. Natural Resources Canada/CMSS/Information Management, 2021. http://dx.doi.org/10.4095/328987.

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The distribution of pyrite and pyrrhotite is documented within an andalusite-sillimanite type (high-temperature, low-pressure) metasedimentary succession exposed in the Hyland River region of southeastern Yukon, Canada. The following metamorphic zones are recognized: chlorite, biotite, cordierite/staurolite (porphyroblast-in), andalusite, sillimanite, and K-feldspar + sillimanite. Pyrite occurs in the chlorite zone through the biotite zone, while pyrrhotite occurs from the chlorite zone to K-feldspar + sillimanite zone. The pyrite-pyrrhotite transition, therefore, occupies an interval in the chlorite and lower biotite zones that is terminated upgrade by a pyrite-out isograd in the upper part of the biotite zone or lowest grade part of the cordierite/staurolite zone. Pressure and temperature conditions of the rocks were estimated from phase equilibrium modelling and from Raman spectroscopy of carbonaceous material (RSCM) thermometry. Modelling indicates pressures of 3.7-4.1 kbar with temperatures of ~425 °C at the biotite isograd, 560-570 °C for chlorite-out/porphyroblast-in, ~575 °C for andalusite-in, 575-600 °C for the sillimanite isograd, and 645-660 °C at the K-feldspar + sillimanite isograd. RSCM temperatures are greater than or equal to 420 °C in the Chl zone, 500 °C at the Bt isograd, 525-550 °C for porphyroblast-in isograd, ~550 °C at the And isograd, and 580 °C at the Sil isograd. These results suggest the pyrite-pyrrhotite transition occurs from less than or equal to 420°C to ~560 °C. Thermodynamic modelling shows 0.6 wt. % H2O is released during metamorphism over the ~140 °C interval of the pyrite-pyrrhotite transition. The gradual release of fluid in the biotite zone is interpreted to have broadened the pyrite-pyrrhotite transition compared to other studies that predict a small interval of vigorous fluid release associated with volumetric chlorite consumption. Samples from the pyrite-pyrrhotite transition zone contain lower whole rock and pyrite Au values than samples from unmetamorphosed/lower rocks, suggesting that Au was removed from the rock at conditions below the pyrite-pyrrhotite transition (&amp;lt;420 °C). The chlorite zone and higher-grade metamorphic rocks of the Hyland River area do not appear to be a plausible source region for orogenic gold.
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Jackson, G. D. Bedrock geology, northwest part of Nuluujaak Mountain, Baffin Island, Nunavut, part of NTS 37-G/5. Natural Resources Canada/CMSS/Information Management, 2021. http://dx.doi.org/10.4095/314670.

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The map area lies about 40 km northwest of Baffinland's iron mine. Dykes of unit mAnA3 within unit mAnA2 suggest that unit mAnA2 predates unit mAnA3. Unit nAMqf, basal Mary River Group unit, includes regolith material from units mAnA2 and mAnA3. Unit mAnAm may include some dykes of unit nAMb. The Mary River Group was deposited in a volcanic-arc environment, yielding zircon U-Pb ages mostly in the range of 2.88 to 2.72 Ga. Iron-formation (unit nAMi) is approximately 276 m thick locally, with oxide facies (unit nAMio) being most abundant. The quartzite triangle west of 'Iron lake' (unofficial name) may be a small horst. The main east-west-trending synclinal fold, including the area around 'Iron lake' and the no. 4 ore deposit, is upright, nearly isoclinal, and plunges mostly easterly at both ends with small scale anticlines and synclines in the middle. Magnetite constitutes about 75% of high-grade iron deposits in the north limb, whereas hematite predominates in south-limb deposits. K-Ar and Rb-Sr ages indicate middle Paleoproterozoic overprinting. Central Borden Fault Zone was active at ca. 1.27 Ga and during or after Ordovician time. Note: please be aware that the information contained in CGM 408 is based on legacy data from the 1960-1990s and that it has been superseded by regional-scale information contained in CGM 403.
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Knight, R. D., B. A. Kjarsgaard, E G Potter, and A. Plourde. Uranium, thorium, and potassium analyses using pXRF spectrometry. Natural Resources Canada/CMSS/Information Management, 2021. http://dx.doi.org/10.4095/328973.

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The application of portable XRF spectrometry (pXRF) for determining concentrations of uranium (U), thorium (Th) and potassium (K) was evaluated using a combination of 12 Certified Reference Materials, 17 Standard Reference Materials, and 25 rock samples collected from areas of known U occurrences or mineralization. Samples were analysed by pXRF in Soil, Mining Cu/Zn and Mining Ta/Hf modes. Resulting pXRF data were compared to published recommended values, obtained by total or near total digestion methods with ICP-MS and ICP-OES analysis. Results for pXRF show a linear relationship, for thorium, potassium, and uranium (&amp;lt;5000 ppm U) as compared to the recommended concentrations. However, above 5000 ppm U, pXRF results show an exponential relationship with under reporting of pXRF concentrations compared to recommended values. Accuracy of the data can be improved by post-analysis correction using linear regression equations for potassium and thorium, and samples with &amp;lt;5000 ppm uranium; an exponential correction curve is required at &amp;gt;5000 ppm U. In addition, pXRF analyses of samples with high concentrations of uranium (e.g. &amp;gt;1 wt.% U) significantly over-estimated potassium contents as compared to the published values, indicating interference between the two elements not calibrated by the manufacturer software.
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Litaor, Iggy, James Ippolito, Iris Zohar, and Michael Massey. Phosphorus capture recycling and utilization for sustainable agriculture using Al/organic composite water treatment residuals. United States Department of Agriculture, January 2015. http://dx.doi.org/10.32747/2015.7600037.bard.

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Objectives: 1) develop a thorough understanding of the sorption mechanisms of Pi and Po onto the Al/O- WTR; 2) determine the breakthrough range of the composite Al/O-WTR during P capturing from agro- wastewaters; and 3) critically evaluate the performance of the composite Al/O-WTR as a fertilizer using selected plants grown in lysimeters and test-field studies. Instead of lysimeters we used pots (Israel) and one- liter cone-tainers (USA). We conducted one field study but in spite of major pretreatments the soils still exhibited high enough P from previous experiments so no differences between control and P additions were noticeable. Due to time constrains the field study was discontinued. Background: Phosphorous, a non-renewable resource, has been applied extensively in fields to increase crop yield, yet consequently has increased the potential of waterway eutrophication. Our proposal impetus is the need to develop an innovative method of P capturing, recycling and reuse that will sustain agricultural productivity while concurrently reducing the level of P discharge from and to agricultural settings. Major Conclusions & Achievements: An innovative approach was developed for P removal from soil leachate, dairy wastewater (Israel), and swine effluents (USA) using Al-based water treatment residuals (Al- WTR) to create an organic-Al-WTR composite (Al/O-WTR), potentially capable of serving as a P fertilizer source. The Al-WTR removed 95% inorganic-P, 80% to 99.9% organic P, and over 60% dissolved organic carbon from the agro-industrial waste streams. Organic C accumulation on particles surfaces possibly enhanced weak P bonding and facilitated P desorption. Analysis by scanning electron microscope (SEM- EDS), indicated that P was sparsely sorbed on both calcic and Al (hydr)oxide surfaces. Sorption of P onto WW-Al/O-WTR was reversible due to weak Ca-P and Al-P bonds induced by the slight alkaline nature and in the presence of organic moieties. Synchrotron-based microfocused X-ray fluorescence (micro-XRF) spectrometry, bulk P K-edge X-ray absorption near edge structure spectroscopy (XANES), and P K-edge micro-XANES spectroscopy indicated that adsorption was the primary P retention mechanism in the Al- WTR materials. However, distinct apatite- or octocalciumphosphatelike P grains were also observed. Synchrotron micro-XRF mapping further suggested that exposure of the aggregate exteriors to wastewater caused P to diffuse into the porous Al-WTR aggregates. Organic P species were not explicitly identified via P K-edge XANES despite high organic matter content, suggesting that organic P may have been predominantly associated with mineral surfaces. In screen houses experiments (Israel) we showed that the highest additions of Al/O-WTR (5 and 7 g kg⁻¹) produced the highest lettuce (Lactuca sativa L. var. longifolial) yield. Lettuce yield and P concentration were similar across treatments, indicating that Al/O- WTR can provide sufficient P to perform similarly to common fertilizers. A greenhouse study (USA) was utilized to compare increasing rates of swine wastewater derived Al/O-WTR and inorganic P fertilizer (both applied at 33.6, 67.3, and 134.5 kg P₂O₅ ha⁻¹) to supply plant-available P to spring wheat (TriticumaestivumL.) in either sandy loam or sandy clay loam soil. Spring wheat straw and grain P uptake were comparable across all treatments in the sandy loam, while Al/O-WTR application to the sandy clay loam reduced straw and grain P uptake. The Al/O-WTR did not affect soil organic P concentrations, but did increase phosphatase activity in both soils; this suggests that Al/O-WTR application stimulated microorganisms and enhance the extent to which microbial communities can mineralize Al/O-WTR-bound organic P. Implications: Overall, results suggest that creating a new P fertilizer from Al-WTR and agro-industrial waste sources may be a feasible alternative to mining inorganic P fertilizer sources, while protecting the environment from unnecessary waste disposal.
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