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Journal articles on the topic 'High-k material'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 March 2023

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1

Susarla, Sandhya, Thierry Tsafack, Peter Samora Owuor, Anand B. Puthirath, Jordan A. Hachtel, Ganguli Babu, Amey Apte, et al. "High-K dielectric sulfur-selenium alloys." Science Advances 5, no. 5 (May 2019): eaau9785. http://dx.doi.org/10.1126/sciadv.aau9785.

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Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

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2

Shimoga, Ganesh, and Sang-Youn Kim. "High-k Polymer Nanocomposite Materials for Technological Applications." Applied Sciences 10, no. 12 (June 20, 2020): 4249. http://dx.doi.org/10.3390/app10124249.

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Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites with high dielectric constant (high-k) properties are widely applicable in the technological sectors including gate dielectrics, actuators, infrared detectors, tunable capacitors, electro optic devices, organic field-effect transistors (OFETs), and sensors. In this short colloquy, we provided an overview of a few remarkable high-k polymer nanocomposites of material science interest from recent decades.

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3

Dixit, Ankita, and Navneet Gupta. "Simulations of the CNFETs using different high-k gate dielectrics." Bulletin of Electrical Engineering and Informatics 9, no. 3 (June 1, 2020): 943–49. http://dx.doi.org/10.11591/eei.v9i3.1784.

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In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49nm and the CNFETs have been fabricated with the CNT diameter of ~1.5nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2. It was also observed that as thickness of gate dielectric material reduces, drain current of CNFET increases. The outcomes of this study matches with the analytical results and hence confirm the results

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4

Kumar, Rajesh, and Rajesh Mehra. "Impact Analysis of DGMOSFET using High-k Dielectric material." International Journal of Engineering Trends and Technology 34, no. 4 (April 25, 2016): 179–83. http://dx.doi.org/10.14445/22315381/ijett-v34p237.

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5

Jamison, Paul C., John Massey, Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, P. J. Chen, Eric Liu, et al. "BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material." ECS Meeting Abstracts MA2020-01, no. 22 (May 1, 2020): 1318. http://dx.doi.org/10.1149/ma2020-01221318mtgabs.

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6

Jamison, Paul C., John Massey, Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, P. J. Chen, Eric Liu, et al. "BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material." ECS Transactions 97, no. 3 (May 1, 2020): 81–92. http://dx.doi.org/10.1149/09703.0081ecst.

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7

Ehrke, U., A. Sears, L. Alff, and D. Reisinger. "High resolution depth profiling of thin STO in high-k oxide material." Applied Surface Science 231-232 (June 2004): 598–602. http://dx.doi.org/10.1016/j.apsusc.2004.03.120.

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8

Hardy, A., S. Van Elshocht, C. Adelmann, J. A. Kittl, S. De Gendt, M. Heyns, J. D’Haen, M. D’Olieslaeger, M. K. Van Bael, and H. Van den Rul. "Strontium niobate high-k dielectrics: Film deposition and material properties." Acta Materialia 58, no. 1 (January 2010): 216–25. http://dx.doi.org/10.1016/j.actamat.2009.09.006.

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9

Bikshalu, K., V. S. K. Reddy, P. C. S. Reddy, and K. V. Rao. "High-performance Carbon Nanotube Field Effect Transistors with High k Dielectric Gate Material." Materials Today: Proceedings 2, no. 9 (2015): 4457–62. http://dx.doi.org/10.1016/j.matpr.2015.10.048.

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10

Li, Zhanqiang, Junfeng Zheng, Wenjuan Zhang, Yong Zheng, Weijun Zhao, Liyan Xue, Fan Yang, and Heng Chen. "A Promising High-Entropy Thermal Barrier Material with the Formula (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12." Materials 15, no. 22 (November 15, 2022): 8079. http://dx.doi.org/10.3390/ma15228079.

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YSZ has been widely used as a TBC material, but its phase change at high temperatures limits its development, thus the need for developing new thermal barrier materials resistant to high temperatures. Rare-earth aluminate ceramics with a garnet structure (Yb3Al5O12) have been considered as a potential thermal barrier material. The melting point of Yb3Al5O12 is 2000 °C, which has a potential high temperature application prospect. However, Yb3Al5O12 has lower thermal expansion and higher thermal conductivity than YSZ, which is a widely employed thermal barrier coating (TBC) material. To overcome these obstacles, (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12, a high-entropy ceramic, was prepared by a solid-state reaction and pressureless sintering. The thermal conductivity of the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 was 3.48 W/(m·K) at 300 K, approximately 25.48% lower than that of the Yb3Al5O12 (4.67 W/(m·K)). The thermal expansion coefficient of the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 was 9.28 × 10−6 K−1 at 673-1273 K, approximately 18.52% higher than that of the Yb3Al5O12 (7.83 × 10−6 K−1, 673-1273 K). When the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 was annealed at 1550 °C for 7 days, its average grain size only increased from 0.7 μm to 1.3 μm. Moreover, the (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 exhibited better chemical stability and a lower grain growth rate than the Yb3Al5O12. This study reveals that (Y0.2Dy0.2Ho0.2Er0.2Yb0.2)3Al5O12 is a promising candidate for the future generation of thermal barrier materials.

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11

CAYMAX, M., S. DE GENDT, W. VANDERVORST, M. HEYNS, H. BENDER, R. CARTER, T. CONARD, et al. "ISSUES, ACHIEVEMENTS AND CHALLENGES TOWARDS INTEGRATION OF HIGH-k DIELECTRICS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 295–304. http://dx.doi.org/10.1142/s0129156402001253.

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Once the thickness of the gate dielectric layer in CMOS devices gets thinner than 1.2 nm, excessive gate leakage due to direct tunneling makes the use of alternative materials obligatory. Candidate high-k materials are metal oxides such as Al 2 O 3, ZrO 2 and HfO 2 as well as their mixtures. Very promising results have been reported world-wide. Here, however, we show that there are a number of issues related to materials and electrical characteristics as well as to processing which are not always recognized and that necessitate more work to find solutions. Among these are problems with density, interface layer growth and island formation which are clearly related to the deposition process. Also thermal instabilities as well as interactions between the high-k material and poly-Si need attention. Further possible show-stoppers are electrical reliability issues and strongly reduced carrier mobility.

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12

HARA, Yoshitake, and Toshihisa NONAKA. "Development of High-K Inorganic/Organic Composite Material for Embedded Capacitors." Journal of Japan Institute of Electronics Packaging 8, no. 7 (2005): 573–79. http://dx.doi.org/10.5104/jiep.8.573.

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13

Van Elshocht, Sven, Christoph Adelmann, Mihaela Popovici, Johan Swerts, Annelies Delabie, Laura Nyns, Xiaoping Shi, et al. "On the Process and Material Sensitivities for High-k Based Dielectrics." ECS Transactions 27, no. 1 (December 17, 2019): 693–98. http://dx.doi.org/10.1149/1.3360696.

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14

Xu, Toby, Coskun Tekes, and F. Degertekin. "CMUTs with high-K atomic layer deposition dielectric material insulation layer." IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61, no. 12 (December 2014): 2121–31. http://dx.doi.org/10.1109/tuffc.2014.006481.

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15

Phani, A. R., D. Di Claudio, M. Passacantando, and S. Santucci. "GeO2 based high k dielectric material synthesized by sol–gel process." Journal of Non-Crystalline Solids 353, no. 5-7 (April 2007): 692–96. http://dx.doi.org/10.1016/j.jnoncrysol.2006.10.040.

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16

Wajda, Cory, Gert Leusink, Koji Akiyama, Shigeo Ashigaki, Shintaro Aoyama, Kouji Shimomura, Miki Aruga, Tsuyoshi Takahashi, Kazuyoshi Yamazaki, and Hideaki Yamasaki. "Control of Material Interactions in Advanced High-k Metal Gate Stacks." ECS Transactions 3, no. 2 (December 21, 2019): 175–84. http://dx.doi.org/10.1149/1.2356277.

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17

Nishihara, Hirotomo. "(Invited) Graphenemesosponge: A New Carbon Material with High Porosity and High Durability for Battery Applications." ECS Meeting Abstracts MA2022-01, no. 10 (July 7, 2022): 782. http://dx.doi.org/10.1149/ma2022-0110782mtgabs.

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There are many kinds of carbon materials such as activated carbons, nanoporous carbons, carbon blacks, graphite, carbon nanotubes, carbon nanofibers, and graphene-like materials, and they have been used in a variety of batteries as active materials, conductive additives, and gas diffusion layers. Depending on the purpose of use, carbon materials are required to have appropriate porosity, electric conductivity, mechanical stability, and electrochemical stability. While the above mentioned carbon materials have individual advantages and disadvantages, it has been a challenging target to develop next-generation carbon materials to satisfy all the necessary requirements at the same time. In this talk, a new class of carbon material, “graphene mesosponge (GMS)”, is introduced as a feasible candidate [1]. GMS is synthesized by a hard-templating method using Al2O3 [1] or MgO [2] nanoparticles via precisely controlled chemical-vapor deposition in which the average stacking number of graphene sheets is adjusted to 1. After template removal, the resulting mesoporous carbon is annealed at 1800 °C to form GMS. By such a high-temperature treatment, most of carbon edge sites which cause corrosion of batteries can be removed, and GMS exhibits ultra-high stability against chemical oxidation as well as electrochemical oxidation. Despite such durability, GMS possess a high surface area (ca. 2000 m2/g) and a large pore volume (> 3 cm3/g). Moreover, GMS has a high electric conductivity which is superior to carbon blacks. Furthermore, GMS is mechanically flexible and tough. GMS shows reversible deformation and recovery upon applying mechanical force and its removal [3]. Such unique properties of GMS enable its use as next-generation durable and high-performance carbon material to battery applications. As an electrode material for electric double-layer capacitors, GMS exhibits ultra-high voltage stability up to 4.4 V even in a conventional organic electrolyte (Et3MeN/BF4), which surpass single-walled carbon nanotubes [4]. Also, GMS is useful to a Pt support of polymer-electrolyte fuel cells [5] and to a cathode of Li-air batteries. References [1] H. Nishihara, T. Simura, S. Kobayashi, K. Nomura, R. Berenguer, M. Ito, M. Uchimura, H. Iden, K. Arihara, A. Ohma, Y. Hayasaka, T. Kyotani, Adv. Funct. Mater. 2016, 26, 6418-6427. [2] S. Sunahiro, K. Nomura, S. Goto, K. Kanamaru, R. Tang, M. Yamamoto, T. Yoshii, J. N. Kondo, Q. Zhao, A. Ghulam Nabi, R. Crespo-Otero, D. Di Tommaso, T. Kyotani, H. Nishihara, J. Mater. Chem. A 2021, 9, 14296-14308. [3] K. Nomura, H. Nishihara, M. Yamamoto, A. Gabe, M. Ito, M. Uchimura, Y. Nishina, H. Tanaka, M. T. Miyahara, T. Kyotani, Nat. Commun. 2019, 10, 2559. [4] K. Nomura, H. Nishihara, N. Kobayashi, T. Asada, T. Kyotani, Energy Environ. Sci. 2019, 12, 1542-1549. [5] A. Ohma, Y. Furuya, T. Mashio, M. Ito, K. Nomura, T. Nagao, H. Nishihara, H. Jinnai, T. Kyotani, Electrochim. Acta 2021, 370, 137705.

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18

He, Peng, Biao Wei, Peng Feng, Mianyi Chen, and Deling Mi. "Material Discrimination Based on K-edge Characteristics." Computational and Mathematical Methods in Medicine 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/308520.

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Spectral/multienergy CT employing the state-of-the-art energy-discriminative photon-counting detector can identify absorption features in the multiple ranges of photon energies and has the potential to distinguish different materials based on K-edge characteristics. K-edge characteristics involve the sudden attenuation increase in the attenuation profile of a relatively high atomic number material. Hence, spectral CT can utilize material K-edge characteristics (sudden attenuation increase) to capture images in available energy bins (levels/windows) to distinguish different material components. In this paper, we propose an imaging model based on K-edge characteristics for maximum material discrimination with spectral CT. The wider the energy bin width is, the lower the noise level is, but the poorer the reconstructed image contrast is. Here, we introduce the contrast-to-noise ratio (CNR) criterion to optimize the energy bin width after the K-edge jump for the maximum CNR. In the simulation, we analyze the reconstructed image quality in different energy bins and demonstrate that our proposed optimization approach can maximize CNR between target region and background region in reconstructed image.

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19

Prikhna, Tetiana, Wolfgang Gawalek, Yaroslav Savchuk, Maxim Serga, Tobias Habisreuther, Alexander Soldatov, Shu Jie You, et al. "The Effect of Oxygen Distribution Inhomogeneity and Presence of Higher Borides on the Critical Current Density Improvement of Nanostructural MgB₂." Advances in Science and Technology 75 (October 2010): 161–66. http://dx.doi.org/10.4028/www.scientific.net/ast.75.161.

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MgB2-based nanostructural materials with rather high oxygen concentration (5-14 wt.%) and dispersed grains of higher borides (MgB12, MgB7) high-pressure (2 GPa or 30 MPa) synthesized (in-situ) or sintered (ex-situ) demonstrated high superconducting characteristics (critical current density, jc, up to 1.8-1.0106 A/cm2 in the self magnetic field and 103 in 8 T field at 20 K, 3-1.5105 A/cm2 in the self field at 35 K, upper critical field up to HC2 = 15 T at 22 K, field of irreversibility Hirr =13 T at 20 K). The additives (Ti, SiC) and synthesis or sintering temperature can affect the segregation of oxygen and formation of oxygen-enriched Mg-B-O inclusions in the material structure, thus reducing the amount of oxygen in the material matrix as well as the formation of higher borides grains, which affects an increase of the critical current density. The record high HC2 and Hirr have been registered for the material high-pressure (2 GPa) synthesized from Mg and B at 600 oC having 17% porosity and more than 7 wt.% of oxygen. The attained values of the critical current, AC losses and thermal conductivity make the materials promising for application for fault current limiters and electromotors. The structural and superconducting (SC) characteristics of the material with matrix close to MgB12 in stoichiometry has been studied and the SC transition Tc=37 K as well as jc= 5×104 A/cm2 at 20 K in the self field were registered, its Raman spectrum demonstrated metal-like behavior.

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20

Funahashi, Ryoji, Yoko Matsumura, Tomonari Takeuchi, Hideaki Tanaka, Wataru Norimatsu, Emmanuel Combe, Ryosuke O. Suzuki, et al. "New n-type Silicide Thermoelectric Material with High Oxidation Resistance." MRS Proceedings 1490 (2013): 103–12. http://dx.doi.org/10.1557/opl.2013.117.

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ABSTRACTIn order to achieve waste heat recovery using thermoelectric systems, thermoelectric materials showing high conversion efficiency over wide temperature range and high resistance against oxidation are indispensable. A silicide material with good n-type thermoelectric properties and oxidation resistance has been discovered. The composition and crystal structure of the silicide are found out Mn3Si4Al2 (abbreviated as 342 phase) and hexagonal CrSi2 structure, respectively. Element substitution of Mn with 3d transition metals is succeeded. Enhancement of Seebeck coefficient is observed in a Cr-substituted sample. The maximum dimensionless thermoelectric figure of merit ZT is 0.3 at 573 K in air for the Mn2.7Cr0.3Si4Al2 sample. Electrical resistivity of the Mn3Si4Al2 bulk sample holds constant value for 48 h at 873 K in air. This is due to formation of oxide passive layer on the surface of the bulk sample. The 342 phase is a promising n-type material with a good oxidation resistance in the middle temperature range of 500-800 K.

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21

Duguey, Sonia, Richard Lebourgeois, and Jean Marc Heintz. "Sintering of High K LTCC Compatible Dielectrics." Materials Science Forum 534-536 (January 2007): 1501–4. http://dx.doi.org/10.4028/www.scientific.net/msf.534-536.1501.

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This study deals with the co-sintering of copper oxide added ANT with alumina tapes and silver ink. AgNb1/2Ta1/2O3 (refered ANT 22) was synthesized using niobium oxide with fine and large grain size to examine the effect of the granulometry on the tape casting. The resulting multilayers were co-fired between 850 and 900°C. Phase identification was investigated by XRD. Energy Dispersive Spectroscopy was performed to study the interdiffusion between the layers. Permittivity and dielectric losses were measured at 50 kHz for both tape cast samples and bullk material. No interdiffusion was observed between ANT/silver and ANT/alumina and this is a very promising result for LTCC applications.

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22

Kostina, L. I., O. S. Kosareva, E. V. Truskinov, and T. V. Kirpicheva. "The collection of potato varieties as a reserve of source material for breeding for high yield, earliness, and resistance to diseases and pests." Proceedings on applied botany, genetics and breeding 181, no. 2 (June 28, 2020): 50–56. http://dx.doi.org/10.30901/2227-8834-2020-2-50-56.

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Background. Information is provided about the results obtained by screening the VIR collection of improved potato varieties for main commercial traits: earliness, high yield, high starch content, and resistance to late blight (Phytophthora infestans (Mont.) de Bary), viruses, and pests, such as cyst nematode (Globodera rostochiensis Woll. (Ro1)), and Colorado beetle (Leptinotarsa decemlineata Say).Materials and methods. Potato accessions representing domestic and foreign varieties from the VIR collection served as the material for this research. The screening was performed according to the techniques developed at the Potato Genetic Resources Department of VIR.Results and conclusion. Potato varieties with valuable commercial traits were identified as breeding sources promising for earliness: ‘Bashkirskiy’ (k-25338), ‘Charoit’ (k-25221), ‘Colleen’ (k-25224), ‘Lagun’ (k-25294), etc.; for high yield: ‘Ametist’ (k-25336), ‘Banba’ (k-25222), ‘Bastion’ (k-25198), ‘Nur-Alem’ (k-25253), ‘Senim’ (k-25306), etc.; for high starch content: ‘Charaўnik’ (k-25139), ‘Darnitsa’ (k-25179), ‘Lad’ (k-25180), ‘Maksimum’ (k-25136), etc.; for resistance to late blight: local variety (Georgia) (k-25298, k-25326), ‘Sunkar’ (k-25258), ‘Udovitskiy’ (k-25260), ‘Vektor’ (k-25200), ‘Zvezdochka’ (k-25209); for resistance to viruses: ‘Azart’ (k-25196), Gala (k-25270), ‘Nadezhda’ (k-25213), Utro (k-25219), ‘Volat’ (k-25263), etc. Varieties combining resistance to gold potato cyst nematode with other valuable commercial traits were selected. Varieties with relative resistance to Colorado potato beetle were isolated under favorable conditions for the pest’s development. As a result of the research, new source material was identified, with a potential to improve major commercial traits of potato: earliness, high yield, high starch content, resistance to late blight, viruses, and pests (cyst nematode and Colorado beetle).

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23

Lin, Yu-Hsien, and Jay-Chi Chou. "Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials." Journal of Nanomaterials 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/782786.

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We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using different high-k gate dielectric materials such as silicon nitride (Si3N4) and aluminum oxide (Al2O3) at low temperature process (<300°C) and compared them with low temperature silicon dioxide (SiO2). The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

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24

Matters-Kammerer, M., U. Mackens, K. Reimann, R. Pietig, D. Hennings, B. Schreinemacher, R. Mauczok, S. Gruhlke, and C. Martiny. "Material properties and RF applications of high k and ferrite LTCC ceramics." Microelectronics Reliability 46, no. 1 (January 2006): 134–43. http://dx.doi.org/10.1016/j.microrel.2004.10.022.

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25

Jiang, J., O. O. Awadelkarim, D. O. Lee, P. Roman, and J. Ruzyllo. "On the capacitance of metal/high-k dielectric material stack/silicon structures." Solid-State Electronics 46, no. 11 (November 2002): 1991–95. http://dx.doi.org/10.1016/s0038-1101(02)00167-3.

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26

Xu, Da, Chenyi Zhou, Yunhe Zhang, Jinhui Pang, Zhenhua Jiang, and Haibo Zhang. "Rational design and preparation of a strong and tough high-k material." Reactive and Functional Polymers 156 (November 2020): 104730. http://dx.doi.org/10.1016/j.reactfunctpolym.2020.104730.

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27

Lopes, Joao M., Martin Roeckerath, Tassilo Heeg, Jurgen Schubert, Uffe Littmark, Siegfried Mantl, Astrid Besmehn, et al. "Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material." ECS Transactions 11, no. 4 (December 19, 2019): 311–18. http://dx.doi.org/10.1149/1.2779570.

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28

Piluso, P., G. Trillon, and D. Magallon. "Material Effect and Steam Explosion at High Temperature (T > 2300 K)." International Journal of Thermophysics 26, no. 4 (July 2005): 1095–114. http://dx.doi.org/10.1007/s10765-005-6687-7.

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29

Zhang, Wenyang, Huixin Jin, and Jianxin Zhang. "Nb2CTx MXene as High-Performance Energy Storage Material with Na, K, and Liquid K–Na Alloy Anodes." Langmuir 37, no. 3 (January 12, 2021): 1102–9. http://dx.doi.org/10.1021/acs.langmuir.0c02957.

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30

Dąbrowski, Jaroslaw, Seiichi Miyazaki, S. Inumiya, G. Kozłowski, G. Lippert, G. Łupina, Y. Nara, Hans Joachim Müssig, A. Ohta, and Y. Pei. "The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics." Materials Science Forum 608 (December 2008): 55–109. http://dx.doi.org/10.4028/www.scientific.net/msf.608.55.

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Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

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Peng, Wei Min, Zhong Li Liu, and Hong Zhi Fu. "High Pressure Properties of Superconducting Material Palladium." Advanced Materials Research 813 (September 2013): 327–31. http://dx.doi.org/10.4028/www.scientific.net/amr.813.327.

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The electronic and the superconducting properties of Pd were studied in the framework of density functional perturbation theory. We explored the superconducting transition temperature for bulk Pd and predicted possible superconductivity at ambient and high pressures. It is found that of Pd is 0.0356 K at ambient pressure and it decreases with pressure.

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32

Vimala, Palanichamy, and N. R. Nithin Kumar. "Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer." Journal of Nano Research 56 (February 2019): 119–30. http://dx.doi.org/10.4028/www.scientific.net/jnanor.56.119.

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In this paper, a comparative analysis of the Tri-gate MOSFET device structure with respect to Single Material Gate (SMG) Tri-gate MOSFET, Double Material Gate (DMG) Tri-gate MOSFET and Triple Material Gate (TMG) Tri-gate MOSFET with & without Hafnium dioxide as high-K dielectric material is employed using Silvaco TCAD Atlas Tool. It shows a compact model and better DC, AC performance for triple material gate structures and yields a high drive current of the device for TMG Tri-gate MOSFET with high-k dielectrics and shows a better electrical characteristics in comparison with other device structures.

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Ghule, B., and M. Laad. "Polymer Composites with Improved Dielectric Properties: A Review." Ukrainian Journal of Physics 66, no. 2 (March 4, 2021): 166. http://dx.doi.org/10.15407/ujpe66.2.166.

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Materials exhibiting high dielectric constant (k) values find applications in capacitors, gate dielectrics, dielectric elastomers, energy storage device, while materials with low dielectric constant are required in electronic packaging and other such applications. Traditionally, high k value materials are associated with high dielectric losses, frequency-dependent dielectric behavior, and high loading of a filler. Materials with low k possess a low thermal conductivity. This creates the new challenges in the development of dielectric materials in both kinds of applications. Use of high dielectric constant filler materials increases the dielectric constant. In this study,the factors affecting the dielectric constant and the dielectric strength of polymer composites are explored. The present work aims to study the effect of various parameters affecting the dielectric properties of the materials. The factors selected in this study are the type of a polymer, type of a filler material used, size, shape, loading level and surface modification of a filler material, and method of preparation of the polymer composites. The study is focused on the dielectric enhancement of polymer nanocomposites used in the field of energy storage devices. The results show that the core-shell structured approach for high dielectric constant materials incorporated in a polymer matrix improves the dielectric constant of the polymer composite.

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Hoffmann, C., A. Geissler, M. Mutti, A. Wicki, and F. Schwager. "Building Materials for Cities and Climate Change – a Material Catalogue with Recommendations." Journal of Physics: Conference Series 2042, no. 1 (November 1, 2021): 012057. http://dx.doi.org/10.1088/1742-6596/2042/1/012057.

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Abstract High urban density with heat accumulating materials and sealed surfaces can cause heat stress and reduced nocturnal cooling in summer. Appropriate building materials may contribute to the mitigation of this effect. The research project evaluates building materials for façades and outer surfaces (ground) on the resulting urban microclimate and on factors like glare, acoustics and embedded energy. The present publication focuses on the impact on the microclimate. The analysis comprises the simulation of forty-seven data sets in a microclimatic model with ENVI-met. The results show that during daytime the PET for the whole neighborhood ranges between 30.1 and 36.4 °C. Choosing a bright instead of a dark color can lower the PET between 0.2 and 1.0 K. Dark colored metal sheets may cause turbulences which lead to a reduction of the PET between 2.0 and 3.8 K (compared to a bright metal sheet). However, this effect may not be reproducible under varying boundary conditions. During night-time, the resulting span of ambient temperatures between the materials reaches 21.4 to 22.0 °C (level 1.7 m). The temperature difference between the materials at the level of 10.7 m (for night ventilation) is found to be approx. 0.3 K and can be considered irrelevant.

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Liu, Zhen, Teng Lu, Fei Xue, Hengchang Nie, Ray Withers, Andrew Studer, Felipe Kremer, et al. "Lead-free (Ag,K)NbO3 materials for high-performance explosive energy conversion." Science Advances 6, no. 21 (May 2020): eaba0367. http://dx.doi.org/10.1126/sciadv.aba0367.

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Explosive energy conversion materials with extremely rapid response times have broad and growing applications in energy, medical, defense, and mining areas. Research into the underlying mechanisms and the search for new candidate materials in this field are so limited that environment-unfriendly Pb(Zr,Ti)O3 still dominates after half a century. Here, we report the discovery of a previously undiscovered, lead-free (Ag0.935K0.065)NbO3 material, which possesses a record-high energy storage density of 5.401 J/g, enabling a pulse current ~ 22 A within 1.8 microseconds. It also exhibits excellent temperature stability up to 150°C. Various in situ experimental and theoretical investigations reveal the mechanism underlying this explosive energy conversion can be attributed to a pressure-induced octahedral tilt change from a−a−c+ to a−a−c−/a−a−c+, in accordance with an irreversible pressure-driven ferroelectric-antiferroelectric phase transition. This work provides a high performance alternative to Pb(Zr,Ti)O3 and also guidance for the further development of new materials and devices for explosive energy conversion.

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Fanciulli, Marco, Michele Perego, Caroline Bonafos, A. Mouti, S. Schamm, and G. Benassayag. "Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications." Advances in Science and Technology 51 (October 2006): 156–66. http://dx.doi.org/10.4028/www.scientific.net/ast.51.156.

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The possibility to use semiconducting or metallic nanocrystals (ncs) embedded in a SiO2 matrix as charge storage elements in novel non volatile memory devices has been widely explored in the last ten years. The replacement of the continuous polysilicon layer of a conventional flash memory device by a 2-dimensional nanoparticle array presents several advantages but the fundamental trade-off between programming and data retention characteristics has not been overcome yet. The main problem is the limited retention time basically due to charge loss by leakage current through the ultra-thin SiO2 tunnelling dielectric. A longer retention time can be achieved by increasing the tunnel oxide thickness. This however implies higher operating voltages and consequently a reduced write/erase speed. Using high-k materials for tunnel and/or gate oxide it is in principle possible to achieve the goal of a low voltage non volatile memory device. The high dielectric constant of these materials allows using thicker tunnel oxide reducing leakage current. Several approaches have been explored to synthesise ordered arrays of ncs in SiO2 but the transfer of these methodologies to the synthesis of 2-d array of ncs in high-k materials is not trivial. In this work we address the material science issues related to the synthesis of metallic and semiconducting ncs in high-k materials using different techniques. A detailed review of the state of the art in the field is presented and further research strategies are suggested.

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Jiang, Xiangcao, Jiupeng Song, Fusheng Peng, Donghong Guo, Yijin Fang, Shaowei Dai, and Bingcan Zhu. "Microstructure and High-Temperature Performance of High K-Doped Tungsten Fibers Used as Reinforcement of Tungsten Matrix." Crystals 12, no. 1 (January 4, 2022): 63. http://dx.doi.org/10.3390/cryst12010063.

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Tungsten (W) fiber-reinforced tungsten (Wf/W) composite with ultra-high strength and high-temperature resistance is considered an attractive candidate material for plasma-facing materials (PFM) in future fusion reactors. The main component of Wf/W composite is tungsten wire, which is obtained through powder metallurgy and the drawing process. In this paper, high potassium (K)-doped tungsten wires with 98 ppm of K and 61 ppm of impurities are prepared using traditional and optimized processing technologies, respectively, and a comparative study with conventional K-doped tungsten wires with 83 ppm of K and 80 ppm of impurities is conducted. The high-temperature mechanical properties as well as the microstructure’s evolution of the prepared tungsten wires are investigated. The results show that the high-temperature performance of K-doped tungsten wires is improved by increasing the K content and by simultaneously reducing the impurities. By adopting small compression deformation and low-temperature processing technology, the high-temperature performance of high K-doped tungsten wires can be further improved. A microstructure analysis indicates that the excellent high-temperature performance is attributed to a combination of the small K bubble size, high K bubble number density, and long K bubble string, which are produced through optimization of the processing technology. A study on the processing technology and the performance of tungsten wires with a high K content and a high purity can provide important information regarding Wf/W composites.

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George, Ryan, and Joseph A. Hriljac. "Umbite Type Zirconium Germanates for Cs Removal." MRS Advances 2, no. 13 (2017): 729–34. http://dx.doi.org/10.1557/adv.2017.173.

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ABSTRACTPure and Nb-doped zirconium germanate materials of composition K2-xZr1-xNbxGe3O9.H2O where x = 0, 0.1, 0.2 and 0.3 with the structure of the natural mineral umbite have been prepared in high yield using hydrothermal synthesis methods. The parent material displays virtually no ion exchange of the K+ for Cs+ but the doped materials show rapidly enhanced exchange with replacement of ca. 70% of the K+ by Cs+ for the 30% doped material. Rietveld analysis of the powder X-ray diffraction data is consistent with no change in the unit cell parameters or K+ bonding prior to the exchange, hence we propose the improved property is due to the creation of cation defect sites within the pores of the material that facilities greater cation mobility and leads to exchange.

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Ge, Yufei, Shuailing Ma, Kuo Bao, Qiang Tao, Xingbin Zhao, Xiaokang Feng, Li Li, Bo Liu, Pinwen Zhu, and Tian Cui. "Superconductivity with high hardness in Mo3C2." Inorganic Chemistry Frontiers 6, no. 5 (2019): 1282–88. http://dx.doi.org/10.1039/c9qi00182d.

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This work synthesized a high hardness and superconductive polycrystalline Mo₃C₂ material by the HPHT method. Mo₃C₂ exhibits superconductivity below 8.2 K and its hardness is far higher than that of the traditionally used superconductive materials.

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Uesugi, Takeo, Hitoshi Kohri, Ichiro Shiota, Masahiko Kato, and Isao J. Ohsugi. "Ca₃Co₂O₆ for High Temperature Side of Thermoelectric FGM." Materials Science Forum 631-632 (October 2009): 489–94. http://dx.doi.org/10.4028/www.scientific.net/msf.631-632.489.

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In modern age, much thermal energy is emitted from ceramic and/or steel industries. Their temperature range is between 500 K and 1300 K. Thermoelectric materials are promising to utilize the waste heat, because of no CO2 emission and long life due to no moving parts. The thermoelectric properties of every thermoelectric material have temperature dependence and high performance appears at a specific temperature range. If the proper materials are placed and joined along the temperature gradient to form an FGM, the performance should be higher than a monolithic material. The performance of a thermoelectric material is expressed by the dimensionless figure of merit ZT=α2ρ-1κ -1T, where α is the Seebeck coefficient, ρ is the electrical resistivity, κ is the thermal conductivity, and T is absolute temperature. Thermoelectric oxides are suitable for high temperature materials because of chemical stability. NaxCoO2 shows relatively high ZT value in thermoelectric oxide at the temperature range below 800 K. Ca3Co4O9 shows ZT ~1 at 1000 K. Recently, it is reported that Ca3Co2O6 that is formed by decomposition of Ca3Co4O9 at 1173 K has high performance at 1300 K. The properties and fabrication condition of high density Ca3Co2O6 are, however, not reported in detail. In order to improve the thermoelectric properties and to shift the temperature range for Ca3Co2O6, we investigated the effects of element substitution. In this experiment, the sintered Ca3Co2-xMxO6 (x=0 or 0.2, M= Mn, Mo or V) were prepared by solid-state reaction or hot pressing. Relative density of Ca3Co2O6 by hot-pressing (HP) was over 94% which is larger than one of Ca3Co2O6 by solid-state reaction (SSR). The resistivity of Mo- or V-substituted Ca3Co2O6 (HP-Mo or HP-V) were lower than one of non-substituted Ca3Co2O6 (HP). The resistivity of Mo-substituted Ca3Co2O6 (HP-Mo) showed the lowest value of 4.3×10-2 Ωcm in all specimens at 1181 K. The power factor α2ρ-1 of Ca3Co2O6 (HP-Mo) was 64.2 Wm-1K-2, which is the largest of all specimens at 1178 K, and this value is approximately 1.3 times higher than 48.8 Wm-1K-2 for Ca3Co2O6 (HP).

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Adak, Sarosij, and Sanjit Kumar Swain. "Impact of High-K Dielectric Materials on Performance Analysis of Underlap In0.17Al0.83N/GaN DG-MOSHEMTs." Nano 14, no. 05 (May 2019): 1950060. http://dx.doi.org/10.1142/s1793292019500607.

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This work systematically investigated the effect of high-[Formula: see text] oxide materials on the performance of InAlN/GaN heterostructure underlap double gate (DG) MOS-HEMTs by considering 2D Sentaurus TCAD simulation. During the course of simulation, hydrodynamic mobility model was implemented and the obtained results were used for validating the model with the previously published experimental results. Different device performance parameters are thoroughly studied for different high-[Formula: see text] oxide materials by performing extensive simulations. It is verified that short channel effects (SCEs), key analog and RF figures of merits parameters and [Formula: see text]th improved with an increase in the value of high-[Formula: see text] oxide material. Moreover, it is also revealed that there is a significant growth in the values of key analog and RF figures of merits with respect to high-[Formula: see text] values. This analysis suggested that use of a suitable value of high-[Formula: see text]-valued oxide material in InAlN/GaN heterostructure underlap DG MOS-HEMTs can be one of the alternatives for future high speed and microwave applications.

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Li, Junhong, and Ping Li. "Simulation Study of a High-Current and Fast Dual-Gate IGBT Device With High- $K$ Material." IEEE Electron Device Letters 37, no. 9 (September 2016): 1181–84. http://dx.doi.org/10.1109/led.2016.2591180.

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Romanyukin, A. E., V. V. Kovtunov, N. A. Kovtunova, and E. A. Shishova. "Initial material for the development of sweet sorghum varieties and hybrids." Grain Economy of Russia 1, no. 2 (May 2, 2021): 3–10. http://dx.doi.org/10.31367/2079-8725-2021-74-2-3-10.

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Sweet sorghum is an alternative forage crop in some agricultural regions of the country. It is widely used for the production of green mass, hay, haylage, grass chop, i.e. it provides the necessary complex of feed for raising farm animals and poultry. The current study was carried out in the period from 2018 to 2019 on the experimental plot of the FSBSI ARC “Donskoy” located in the southern part of the Rostov region. The soil of the experimental plot was ordinary carbonate blackearth (chernozem). The objects of study were 210 collection samples of sweet sorghum. The period ‘sprouts – full maturity’ of the collection samples varied from 80 to 127 days. The early ripening group (which reached full maturity in 80–101 days) included 61.4% (129 pcs) of the studied sweet sorghum samples. The samples ‘K-1437/2’, ‘K-1502/1’, ‘Sakharnoe 7’, ‘K-1809’, ‘Moment’, ‘Sahara’, ‘Simon’ with 82-86 days of vegetation period were identified as the sources of early maturity. According to sugar content in stem sap, the collection samples varied from 5 to 22%. There was identified high (15.1–19.0%) sugar content in 28.1% (59 pcs) of the sorghum samples and very high (more than 19.1%) sugar content in 5.7% (12 pcs) of the sorghum samples. The samples ‘K-2027/2’, ‘Orangevoe uluchshennoe 01’, ‘K-153’, ‘K-1373’, ‘Simon’, ‘Szeegedibanne’ were identified as the samples with high sugar content (21–22%). The samples ‘Bizon’, ‘Zubr’, ‘Mamont’, ‘K-668/2’, ‘SPV-441’, ‘Sacca line’, which had 14–18 leaves, were identified as the sources of high foliage. The samples ‘OS-20’, ‘Zernogradskoe 1UK’, ‘Yarik’, ‘Mamont’, ‘Leoti Red’, ‘Sacca line’ were identified according to high leaf area, exceeding that of the standard variety by 102–159 cm2.

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Liu, Weishu, Hee Seok Kim, Shuo Chen, Qing Jie, Bing Lv, Mengliang Yao, Zhensong Ren, et al. "n-type thermoelectric material Mg2Sn0.75Ge0.25 for high power generation." Proceedings of the National Academy of Sciences 112, no. 11 (March 2, 2015): 3269–74. http://dx.doi.org/10.1073/pnas.1424388112.

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Thermoelectric power generation is one of the most promising techniques to use the huge amount of waste heat and solar energy. Traditionally, high thermoelectric figure-of-merit, ZT, has been the only parameter pursued for high conversion efficiency. Here, we emphasize that a high power factor (PF) is equivalently important for high power generation, in addition to high efficiency. A new n-type Mg2Sn-based material, Mg2Sn0.75Ge0.25, is a good example to meet the dual requirements in efficiency and output power. It was found that Mg2Sn0.75Ge0.25 has an average ZT of 0.9 and PF of 52 μW⋅cm−1⋅K−2 over the temperature range of 25–450 °C, a peak ZT of 1.4 at 450 °C, and peak PF of 55 μW⋅cm−1⋅K−2 at 350 °C. By using the energy balance of one-dimensional heat flow equation, leg efficiency and output power were calculated with Th = 400 °C and Tc = 50 °C to be of 10.5% and 6.6 W⋅cm−2 under a temperature gradient of 150 °C⋅mm−1, respectively.

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Khan, Muhammad Atif, Muhammad Qasim Mehmood, and Yehia Massoud. "High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor." Applied Sciences 12, no. 16 (August 13, 2022): 8119. http://dx.doi.org/10.3390/app12168119.

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Two-dimensional (2D) material-based devices are expected to operate under high temperatures induced by Joule heating and environmental conditions when integrated into compact integrated circuits for practical applications. However, the behavior of these materials at high operating temperatures is obscure as most studies emphasize only room temperature or low-temperature operation. Here, the high-temperature electrical response of the tungsten diselenide (WSe2) field-effect transistor was studied. It is revealed that 350 K is the optimal annealing temperature for the WSe2 transistor, and annealing at this temperature improves on-current, field-effect mobility and on/off ratio around three times. Annealing beyond this temperature (360 K to 670 K) adversely affects the device performance attributed to the partial oxidation of WSe2 at higher temperatures. An increase in hysteresis also confirms the formation of new traps as the device is annealed beyond 350 K. These findings explicate the thermal stability of WSe2 and can help design 2D materials-based durable devices for high-temperature practical applications.

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Yusov, V. S., M. N. Kir’yakova, and M. G. Evdokimov. "Source material in selection of spring durum wheat for conditions of Western Siberia." Bulletin of NSAU (Novosibirsk State Agrarian University), no. 2 (July 13, 2021): 82–90. http://dx.doi.org/10.31677/2072-6724-2021-59-2-82-90.

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The genetic diversity of the world gene pool of collecting samples from the Federal Research Centre of All-Russian Institute of Plant Genetic Resources named after N.I. Vavilov (VIR) was studied in the conditions of the southern forest-steppe zone of Western Siberia. N.I. Vavilov (VIR) by economically valuable traits and grain quality. The study was conducted in four stages as the gene pool became available: 2000-2003, 2007-2008, 2009-2012, 2019-2020. A total of 186 samples were studied. The following varieties recommended by the State Commission of the Russian Federation were used as standards: Altai Niva, Omskaya Amber, Zhemchuzhina Sibiri. Sowing was carried out on May 1516 by fallow in the specialised crop rotation of the durum wheat breeding laboratory of the Omsk Research Center. The material received in the first year was studied in plots with an area of 0.25 m2, and in subsequent years 3 m2. Agroclimatic conditions varied from favourable to contrasting temperature and water regimes. In studies of durum wheat samples from the VIR collection of different origins, sources were identified according to their economic value. Of the diversity, only a small part (10%) is of breeding interest and can be used in hybridisation. The sources of high productivity may be the samples k-59881, k-59888, k-60388, k-60364, k-60366, k-60413, k-61303, k-62657, k-62658, k-63126, k-63160, k-64353, k-64355, k-6386, k-64953, k-61619, k-63821, Sladunitsa, k-66887, k-66886, k-66293, k-66294, k-66519, k-66675, k-64488. In terms of grain quality the following crops stood out: k-59881, k-59889, k-60388, k-60364, k-61117, k-61650, k-62657, k-64353, k-64354, k-64355, k-6386, k-17985, k-63821, Sladunitsa, Iride, k-60410. As sources of resistance to stem rust, we offer k-6386, k-6662, k-46983, k-60410, Iride, k-65353, k-65733, k-65734. According to the complex of traits (high productivity, grain quality and resistance to diseases) are of breeding value samples k-59881 (Russia), k-6386 (Georgia), k-65734 (Syria), Sladunitsa (Ukraine) and Iride (Italy).

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Hwang, In-Su, Young-Han Lee, Jeong-Myeong Yoon, Yoon Hwa, and Cheol-Min Park. "GaSb nanocomposite: New high-performance anode material for Na- and K-ion batteries." Composites Part B: Engineering 243 (August 2022): 110142. http://dx.doi.org/10.1016/j.compositesb.2022.110142.

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Lin, K. C., C. H. Chou, J. Y. Chen, C. J. Li, J. Y. Huang, and C. H. Liu. "The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics." Advanced Materials Research 699 (May 2013): 422–25. http://dx.doi.org/10.4028/www.scientific.net/amr.699.422.

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In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

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Chatterjee, Neel, Akriti Gupta, and Sujata Pandey. "III–V Junctionless Nanowire Transistor with High-k Dielectric Material and Schottky Contacts." Journal of Nanoelectronics and Optoelectronics 12, no. 9 (September 1, 2017): 925–31. http://dx.doi.org/10.1166/jno.2017.2099.

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Kuo, Y. "(Invited) Nanocrystals Embedded High-k Nonvolatile Memories - Bulk Film and Nanocrystal Material Effects." ECS Transactions 53, no. 4 (May 2, 2013): 121–28. http://dx.doi.org/10.1149/05304.0121ecst.

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