Relevant bibliographies by topics / High-k materials

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'High-k materials'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 July 2024

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Journal articles on the topic "High-k materials"

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Specht, Michael, Martin Staedele, Franz Hofmann, Hans Reisinger, Michael Grieb, and Lothar Risch. "High-K Materials for Nonvolatile Memories." ECS Transactions 1, no. 5 (December 21, 2019): 63–73. http://dx.doi.org/10.1149/1.2209256.

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Alessandri, Mauro, Rossella Piagge, Stefano Alberici, Enrico Bellandi, Massimo Caniatti, Gabriella Ghidini, Alberto Modelli, et al. "High-k Materials in Flash Memories." ECS Transactions 1, no. 5 (December 21, 2019): 91–105. http://dx.doi.org/10.1149/1.2209258.

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Na, Yoon-Soo, Tae-Young Lim, Jin-Ho Kim, Hyo-Soon Shin, Jong-Hee Hwang, and Yong-Soo Cho. "Low k Materials for High Frequency High Integration Modules." Journal of the Korean Ceramic Society 46, no. 4 (July 31, 2009): 413–18. http://dx.doi.org/10.4191/kcers.2009.46.4.413.

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WU, De-Qi. "Development of High-K Gate Dielectric Materials." Journal of Inorganic Materials 23, no. 5 (October 23, 2008): 865–71. http://dx.doi.org/10.3724/sp.j.1077.2008.00865.

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Seidel, P., M. Geyer, D. Lehninger, F. Schneider, V. Klemm, and J. Heitmann. "(Invited) Germanium Nanostructures in High-K Materials." ECS Transactions 53, no. 1 (May 2, 2013): 237–43. http://dx.doi.org/10.1149/05301.0237ecst.

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TSUNEYUKI, Shinji. "High-Pressure Materials Science with K Computer." Review of High Pressure Science and Technology 23, no. 2 (2013): 88–93. http://dx.doi.org/10.4131/jshpreview.23.88.

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Shimoga, Ganesh, and Sang-Youn Kim. "High-k Polymer Nanocomposite Materials for Technological Applications." Applied Sciences 10, no. 12 (June 20, 2020): 4249. http://dx.doi.org/10.3390/app10124249.

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Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites with high dielectric constant (high-k) properties are widely applicable in the technological sectors including gate dielectrics, actuators, infrared detectors, tunable capacitors, electro optic devices, organic field-effect transistors (OFETs), and sensors. In this short colloquy, we provided an overview of a few remarkable high-k polymer nanocomposites of material science interest from recent decades.
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Lu, Feng Ming, Jiang Shao, Xiao Yu Liu, and Xing Hao Wang. "Research on TDDB Effect in High-k Materials." Advanced Materials Research 548 (July 2012): 203–8. http://dx.doi.org/10.4028/www.scientific.net/amr.548.203.

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With continual scaling of ICs, the thickness of gate oxide becomes thinner and thinner which affects the reliability of semiconductor device greatly. The mechanism of time-dependent dielectric breakdown (TDDB) was analyzed. Six mathematical models of TDDB which were divided according to the position of defects and the physical property of charged particles were discussed. Then the dielectric breakdown characteristic of high k dielectrics and the relationships between the breakdown electric field, field acceleration parameter and dielectric constant were analyzed in detail. Finally, the relationships and mathematical models were verified by experimental data which provided theoretical basis for the choosing and use of high k materials.
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Benner, F., S. Haas, F. Schneider, V. Klemm, G. Schreiber, J. Von Borany, and J. Heitmann. "(Invited) Semiconductor Nanocrystals Embedded in High-k Materials." ECS Transactions 45, no. 3 (April 27, 2012): 9–16. http://dx.doi.org/10.1149/1.3700867.

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Rollo, Serena, Dipti Rani, Wouter Olthuis, and César Pascual García. "High performance Fin-FET electrochemical sensor with high-k dielectric materials." Sensors and Actuators B: Chemical 303 (January 2020): 127215. http://dx.doi.org/10.1016/j.snb.2019.127215.

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Dissertations / Theses on the topic "High-k materials"

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Sun, Xiao. "Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors." Thesis, Yale University, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3578458.

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As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology.

In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well as the challenges to characterize and passivate them. By modifying certain conventional gate admittance methods, both the fast and slow traps in Ge MOS gate stacks is investigated. In addition, a novel ac-transconductance method originated at Yale is introduced and demonstrated with several advanced transistors provided by collaborating groups, such as ultra-thin-body & box SO1 MOSFETs (CEA-LETI), InGaAs MOSFETs (IMEC, UT Austin, Purdue), and GaN MOS-HEMT (MIT).

By use of the aforementioned characterization techniques, several effective passivation techniques on high mobility substrates (Ge, InGaAs, GaSb, GeSn, etc.) are evaluated, including a novel Ba sub-monolayer passivation of Ge surface. The key factors that need to be considered in passivating high mobility substrates are revealed.

The techniques that we have established for characterizing traps in advanced field-effect transistors, as well as the knowledge gained about these traps by the use of these techniques, have been applied to the study of ionizing radiation effects in high-mobility-channel transistors, because it is very important to understand such effects as these devices are likely to be exposed to radiation-harsh environments, such as in outer space, nuclear plants, and during X-ray or UHV lithography. In this thesis, the total ionizing dose (TD) radiation effects of InGaAs-based MOSFETs and GaN-based MOS-HEMT are studied, and the results help to reveal the underlying mechanisms and inspire ideas for minimizing the TID radiation effects.

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Mutas, Sergej [Verfasser]. "Analysis of high-k materials with Local Electrode Atom Probe / Sergej Mutas." Aachen : Shaker, 2012. http://d-nb.info/1066198276/34.

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Kirsch, Paul Daniel. "Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3034557.

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Mudanai, Sivakumar Panneerselvam. "Gate current modeling through high-k materials and compact modeling of gate capacitance." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3038191.

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Cheng, Cheng-Wei Ph D. Massachusetts Institute of Technology. "In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/59216.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
Includes bibliographical references (p. 164-168).
In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first selected to be in situ deposited on GaAs surface by using trimethlyaluminum(TMA) and dimethylhydrazine (DMHy). However, the frequency dispersion of Capacitance-Voltage (C-V) curves for in situ AIN/GaAs samples are always large because of the existence of high interfacial defect state density (Dit) due to the nitridization of the GaAs surface during the AIN deposition. In order to avoid the surface reaction, in situ ALD of aluminum oxide (A1₂O₃) on GaAs in MOCVD system was proposed. Isopropanol (IPA) was chosen as the oxygen source for A1₂O₃ ALD and the mechanism was investigated. Pure A120 3 thin film was obtained and no arsenic or gallium oxide was observed at the interface. Both frequency dispersion of C-V curve and the Di, of oxide/p-GaAs interface are low for this process. In situ CVD A1₂O₃ on GaAs was also performed. Gallium oxide (Ga₂O₃) was observed at the interface. The Ga₂O₃ was enriched in the A1₂O₃ above the interface during the deposition process and a possible mechanism was proposed. This layer reduces the frequency dispersion of the C-V characteristics and lowers the Dit of n-type GaAs sample. After the in situ method had been successfully established, ex situ experiments was also performed to compare the results with in situ process in the same MOCVD system. Annealing native oxide covered GaAs samples in Arsine (AsH 3) prior to ALD A1₂O₃ results in C-V characteristics of the treated samples that resemble the superior C-V characteristics of p-type GaAs. Besides, both TMA and IPA show self-cleaning effect on removing the native oxide in ex situ process. The discrepancy in the C-V characteristics was observed in in situ p- and n-type GaAs samples. Finally, the entire Dit energy distributions of interfaces from different processes were determined by conductance frequency method with temperature-variation C-V measurement. The existence of Ga₂O₃ at interface was found to be the possible source to lower the density of mid-gap defect state. From the C-V simulation, the mid-gap defect states are acceptor-like (Gallium Vacancies) and the source to cause high frequency dispersion of the C-V curves for n-type substrate. The relation between the interfacial defect state distribution and the processes was correlated.
by Cheng-Wei Cheng.
Ph.D.
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Gao, Yong. "Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics." Diss., The University of Arizona, 2004. http://hdl.handle.net/10150/290136.

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As the MOS devices continue to scale down in feature size, the gate oxide thickness is approaching the nanometer node. High leakage current densities caused by tunneling is becoming a serious problem. Replacing silicon oxide with a high kappa material as the gate dielectrics is becoming very critical. In recent years, research has been focused on a few promising candidates, such as ZrO₂, HfO₂, Al₂O₃, Ta₂O₅, and some silicates. However, unary metal oxides tend to crystallize at relatively low temperatures (less than 700°C). Crystallized films usually have a very small grain size and high leakage current due to the grain boundaries. The alternatives are high κ oxides which are single crystal or amorphous. Silicates remain amorphous at high temperatures, but have some problems such as phase separation, interface reaction, and lower κ value. In this work, we addressed the crystallization problems of zirconium oxide and hafnium oxide thin films. Both of these two thin films were deposited by DC reactive magnetron sputtering so that very dense films were deposited with little damage. A specially designed system was set up in order to have good control of the deposition process. The crystallization behavior of as-deposited amorphous ZrO₂ and HfO₂ films was studied. It was found that the films tended to have higher crystallization temperature when the films were thinner than a critical thickness of approximately 5 nm. However, it was still well below 900°C. The crystallization temperature was significantly increased by sandwiching the high kappa oxide layer between two silica layers. Ultra thin HfO₂ films of 5nm thickness remained amorphous up to 900°C. This is the highest crystallization temperature which has been reported. The mechanisms for this effect are proposed. Electrical properties of these high kappa dielectric films were also studied. It was found that ultra thin amorphous HfO₂ and ZrO₂ films had superior electrical properties to crystalline films. The leakage current density of ultra thin amorphous films was at least two orders of magnitude lower than that of crystallized films. Amorphous films also showed much less hysteresis in the capacitance-voltage curve than uncapped crystallized films. The mechanisms for the electrical property differences between ultra thin crystalline and amorphous films were studied. Due to successful control of the low dielectric interfacial layer thickness, an effective oxide thickness of 1.2 and 1.4 nm was obtained for HfO₂ and ZrO₂ films, respectively.
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Li, Haoxiang. "Angle-Resolved Photoemission Spectroscopy Study of High Temperature Superconductor Cuprate, and Potential High Temperature Superconductors K-Doped p-Terphenyl and Trilayer Nickelate." Thesis, University of Colorado at Boulder, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10642070.

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The macroscopic quantum phenomenology of superconductivity has attracted broad interest from both scientific research and applications. Many exotic physics found in the first high $T_C$ superconductor family cuprate remain unsolved even after 30 years of intense study. Angle-Resolved Photoemission Spectroscopy (ARPES) provides the direct probe to the major information of the electronic interactions, which plays the key role in these exotic physics including high $T_C$ superconductivity. ARPES is also the best tool to study the electronic structure in materials that potentially hold high $T_C$ superconductivity, providing insight for materials research and design. In this thesis, we present the ARPES study of the cuprate high $T_C$ superconductor Pb doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$, and potential high $T_C$ superconductors K doped \textit{p}-terphenyl, and trilayer nickelate La$_4$Ni$_3$O$_{10}$. For Pb doped Bi2212, our study focuses on the key part of the electronic interactions---the self-energies. With the development of a novel 2-dimensional analysis technique, we present the first quantitative extraction of the fully causal complex self-energies. The extracted information reveals a conversion of the diffusive strange-metal correlations into a coherent highly renormalized state at low temperature followed by the enhancement of the number of states for pairing. We then further show how this can lead to a strong positive feedback effect that can stabilize and strengthen superconducting pairing. In K doped \textit{p}-terphenyl, we discover low energy spectral gaps that persist up to 120 K, consistent with potential Meissner effect signal from previous studies. Among a few potential origins for these gaps, we argue that the electron pairing scenario is most likely. For La$_4$Ni$_3$O$_{10}$, we present the Fermiology and electron dynamics of this material, and they show certain similarities to the cuprate electronic structure, as well as a few unique features.

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Reddy, Raj. "A study of high-K dielectric materials in conjunction with a multilayer thick-film system." Thesis, Virginia Tech, 1988. http://hdl.handle.net/10919/43280.

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A new family of dielectric materials has been studied, individually as thick-film capacitors and as buried components incorporated in second-order lowpass and bandpass RC active filter circuits. The materials were electrically characterized in terms of the variation of dielectric constant and dissipation factor with frequency. The performance of the filter circuit is related to the characteristics of the dielectric materials. An analysis of the circuit is developed which accounts for the capacitor losses.
Master of Science
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Sreenivasan, Raghavasimhan. "Metal-gate/high-k dielectric stack engineering by atomic layer deposition : materials issues and electrical properties /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Tse, Koon-Yiu. "High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611979.

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Books on the topic "High-k materials"

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Michel, Houssa, ed. High-K gate dielectrics. Bristol: Institute of Physics, 2004.

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Tayal, Shubham, Parveen Singla, and J. Paulo Davim. High-k Materials in Multi-Gate FET Devices. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003121589.

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Frank, Blackwell, Hohmann Charles 1945-, Maehr Jane, and High/Scope Educational Research Foundation, eds. High/Scope K-3 curriculum series. Ypsilanti, Mich: High/Scope Press, 1991.

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International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (1st 2003 Salt Lake City, Utah). Physics and technology of high-k gate dielectrics I : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, Reliability, and Manufacturing Issues, held in Salt Lake City, Utah, October 20-24, 2002. Edited by Kar S. 1942-, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Pennington, NJ: Electrochemical Society, 2003.

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Kablov, E. N. Aviat︠s︡ionnye materialy i tekhnologii: I︠u︡bileĭnyĭ nauchno-tekhnicheskiĭ sbornik (prilozhenie k zhurnalu "Aviat︠s︡ionnye materialy i tekhnologii"). Moskva: VIAM, 2012.

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Whittenberger, J. Daniel. Mechanical properties of pure nickel alloys after long term exposures to LiOH and vacuum at 775 K. [Washington, D.C.]: NASA, 1990.

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Pressure Vessels and Piping Conference (2010 Bellevue, Wash.). Proceedings of the ASME Pressure Vessels and Piping Conference--2010: Presented at ASME 2010 Pressure Vessels and Piping Conference/K-PVP Conference, July 18-22, 2010, Bellevue, Washington, USA. New York: American Society of Mechanical Engineers, 2010.

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High-K Gate Dielectric Materials. Taylor & Francis Group, 2020.

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Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials. Taylor & Francis Group, 2022.

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Houssa, Michel. High K Gate Dielectrics. Taylor & Francis Group, 2003.

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Book chapters on the topic "High-k materials"

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Maity, N. P., and Reshmi Maity. "Selection of High-k Dielectric Materials." In High-K Gate Dielectric Materials, 59–71. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-4.

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Harsha, P. Sri, K. Venkata Saravanan, and V. Madhurima. "High-k Dielectric Materials: Structural Properties and Selection." In High-K Gate Dielectric Materials, 31–57. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-3.

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Maity, N. P., and Reshmi Maity. "Moore’s Law: In the 21st Century." In High-K Gate Dielectric Materials, 1–11. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-1.

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Maity, N. P., and Reshmi Maity. "SiO2-Based MOS Devices: Leakage and Limitations." In High-K Gate Dielectric Materials, 13–29. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-2.

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Maity, N. P., and Reshmi Maity. "Tunneling Current Density and Tunnel Resistivity: Application to High-k Material HfO2." In High-K Gate Dielectric Materials, 73–88. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-5.

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Maity, N. P., and Reshmi Maity. "Analysis of Interface Charge Density: Application to High-k Material Tantalum Pentoxide." In High-K Gate Dielectric Materials, 89–113. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-6.

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Sahu, Partha Pratim. "High-k Material Processing in CMOS VLSI Technology." In High-K Gate Dielectric Materials, 115–81. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-7.

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Baishya, Srimanta. "Tunnel FET: Working, Structure, and Modeling." In High-K Gate Dielectric Materials, 183–99. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-8.

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Rai, D. P. "Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications." In High-K Gate Dielectric Materials, 201–37. Includes bibliographical references and index.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429325779-9.

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Kar, Samares. "Introduction to High-k Gate Stacks." In High Permittivity Gate Dielectric Materials, 1–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36535-5_1.

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Conference papers on the topic "High-k materials"

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Degraeve, R., F. Crupi, M. Houssa, D. H. Kwak, A. Kerber, E. Cartier, T. Kauerauf, et al. "Reliability Issues in High-k Stacks." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.e-2-1.

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Walder, C., M. Molberg, D. M. Opris, F. A. Nüesch, C. Löwe, C. J. G. Plummer, Y. Leterrier, and J. A. E. Månson. "High k dielectric elastomeric materials for low voltage applications." In SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, edited by Yoseph Bar-Cohen and Thomas Wallmersperger. SPIE, 2009. http://dx.doi.org/10.1117/12.815926.

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Wallace, Robert M. "Critical Materials Issues for High-k Gate Dielectric Integration." In 2002 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2002. http://dx.doi.org/10.7567/ssdm.2002.b-1-1.

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Manchanda, L. "High K Dielectrics for CMOS and Flash." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.b-3-1.

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Edwards, N. V. "Status and Prospects For VUV Ellipsometry (Applied to High K and Low K Materials)." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology. AIP, 2003. http://dx.doi.org/10.1063/1.1622551.

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Yu, W., B. Zhang, E. Durgun-Özben, R. A. Minamisawa, R. Luptak, M. Hagedorn, B. Holländer, et al. "High mobility Si-Ge channels and novel high-k materials for nanomosfets." In 2010 International Semiconductor Conference (CAS 2010). IEEE, 2010. http://dx.doi.org/10.1109/smicnd.2010.5650285.

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Ui, T., R. Mori, S. P. Le, Y. Oshima, and T. Suzuki. "Fabrication and Characterization of InAs/High-k/Low-k Structures." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.n-1-04.

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Akasaka, Y., K. Miyagawa, A. Kariya, H. Shoji, T. Aoyama, S. Kume, M. Shigeta, et al. "Material Selection for the Metal Gate/High-k Transistors." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.b-5-1.

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Ma, Ce, Kee-Chan Kim, Graham McFarlane, and Atul Athalye. "Flex-ALD Lanthanum Materials for High-k/Metal-Gate Applications." In 2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference. IEEE, 2008. http://dx.doi.org/10.1109/asmc.2008.4529014.

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Marroun, Abdelhafid, Naima Amar Touhami, and Taj-Eddin El Hamadi. "Improved IGZO-TFT structure Using High-k Gate Dielectric Materials." In 2019 International Conference on Wireless Technologies, Embedded and Intelligent Systems (WITS). IEEE, 2019. http://dx.doi.org/10.1109/wits.2019.8723852.

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Reports on the topic "High-k materials"

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Knight, R. D., B. A. Kjarsgaard, E G Potter, and A. Plourde. Uranium, thorium, and potassium analyses using pXRF spectrometry. Natural Resources Canada/CMSS/Information Management, 2021. http://dx.doi.org/10.4095/328973.

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The application of portable XRF spectrometry (pXRF) for determining concentrations of uranium (U), thorium (Th) and potassium (K) was evaluated using a combination of 12 Certified Reference Materials, 17 Standard Reference Materials, and 25 rock samples collected from areas of known U occurrences or mineralization. Samples were analysed by pXRF in Soil, Mining Cu/Zn and Mining Ta/Hf modes. Resulting pXRF data were compared to published recommended values, obtained by total or near total digestion methods with ICP-MS and ICP-OES analysis. Results for pXRF show a linear relationship, for thorium, potassium, and uranium (<5000 ppm U) as compared to the recommended concentrations. However, above 5000 ppm U, pXRF results show an exponential relationship with under reporting of pXRF concentrations compared to recommended values. Accuracy of the data can be improved by post-analysis correction using linear regression equations for potassium and thorium, and samples with <5000 ppm uranium; an exponential correction curve is required at >5000 ppm U. In addition, pXRF analyses of samples with high concentrations of uranium (e.g. >1 wt.% U) significantly over-estimated potassium contents as compared to the published values, indicating interference between the two elements not calibrated by the manufacturer software.
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Litaor, Iggy, James Ippolito, Iris Zohar, and Michael Massey. Phosphorus capture recycling and utilization for sustainable agriculture using Al/organic composite water treatment residuals. United States Department of Agriculture, January 2015. http://dx.doi.org/10.32747/2015.7600037.bard.

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Objectives: 1) develop a thorough understanding of the sorption mechanisms of Pi and Po onto the Al/O- WTR; 2) determine the breakthrough range of the composite Al/O-WTR during P capturing from agro- wastewaters; and 3) critically evaluate the performance of the composite Al/O-WTR as a fertilizer using selected plants grown in lysimeters and test-field studies. Instead of lysimeters we used pots (Israel) and one- liter cone-tainers (USA). We conducted one field study but in spite of major pretreatments the soils still exhibited high enough P from previous experiments so no differences between control and P additions were noticeable. Due to time constrains the field study was discontinued. Background: Phosphorous, a non-renewable resource, has been applied extensively in fields to increase crop yield, yet consequently has increased the potential of waterway eutrophication. Our proposal impetus is the need to develop an innovative method of P capturing, recycling and reuse that will sustain agricultural productivity while concurrently reducing the level of P discharge from and to agricultural settings. Major Conclusions & Achievements: An innovative approach was developed for P removal from soil leachate, dairy wastewater (Israel), and swine effluents (USA) using Al-based water treatment residuals (Al- WTR) to create an organic-Al-WTR composite (Al/O-WTR), potentially capable of serving as a P fertilizer source. The Al-WTR removed 95% inorganic-P, 80% to 99.9% organic P, and over 60% dissolved organic carbon from the agro-industrial waste streams. Organic C accumulation on particles surfaces possibly enhanced weak P bonding and facilitated P desorption. Analysis by scanning electron microscope (SEM- EDS), indicated that P was sparsely sorbed on both calcic and Al (hydr)oxide surfaces. Sorption of P onto WW-Al/O-WTR was reversible due to weak Ca-P and Al-P bonds induced by the slight alkaline nature and in the presence of organic moieties. Synchrotron-based microfocused X-ray fluorescence (micro-XRF) spectrometry, bulk P K-edge X-ray absorption near edge structure spectroscopy (XANES), and P K-edge micro-XANES spectroscopy indicated that adsorption was the primary P retention mechanism in the Al- WTR materials. However, distinct apatite- or octocalciumphosphatelike P grains were also observed. Synchrotron micro-XRF mapping further suggested that exposure of the aggregate exteriors to wastewater caused P to diffuse into the porous Al-WTR aggregates. Organic P species were not explicitly identified via P K-edge XANES despite high organic matter content, suggesting that organic P may have been predominantly associated with mineral surfaces. In screen houses experiments (Israel) we showed that the highest additions of Al/O-WTR (5 and 7 g kg⁻¹) produced the highest lettuce (Lactuca sativa L. var. longifolial) yield. Lettuce yield and P concentration were similar across treatments, indicating that Al/O- WTR can provide sufficient P to perform similarly to common fertilizers. A greenhouse study (USA) was utilized to compare increasing rates of swine wastewater derived Al/O-WTR and inorganic P fertilizer (both applied at 33.6, 67.3, and 134.5 kg P₂O₅ ha⁻¹) to supply plant-available P to spring wheat (TriticumaestivumL.) in either sandy loam or sandy clay loam soil. Spring wheat straw and grain P uptake were comparable across all treatments in the sandy loam, while Al/O-WTR application to the sandy clay loam reduced straw and grain P uptake. The Al/O-WTR did not affect soil organic P concentrations, but did increase phosphatase activity in both soils; this suggests that Al/O-WTR application stimulated microorganisms and enhance the extent to which microbial communities can mineralize Al/O-WTR-bound organic P. Implications: Overall, results suggest that creating a new P fertilizer from Al-WTR and agro-industrial waste sources may be a feasible alternative to mining inorganic P fertilizer sources, while protecting the environment from unnecessary waste disposal.
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3

Bradford, Joe, Itzhak Shainberg, and Lloyd Norton. Effect of Soil Properties and Water Quality on Concentrated Flow Erosion (Rills, Ephermal Gullies and Pipes). United States Department of Agriculture, November 1996. http://dx.doi.org/10.32747/1996.7613040.bard.

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Concentrated flow erosion in rills, pipes, ephermal gullies, and gullies is a major contributor of downstream sedimentation. When rill or gullies form in a landscape, a 3- to 5-fold increase in soil loss commonly occurs. The balance between the erosive power of the flow and the erosion resistance of the bed material determines the rate of concentrated flow erosion. The resistance of the bed material to detachment depends primarily on the magnitude of the interparticle forces or cohesion holding the particles and aggregates together. The effect of soil properties on bed material resistance and concentrated flow erosion was evaluated both in the laboratory and field. Both rill erodibility and critical hydraulic shear were greater when measured in 9.0 m long rills under field conditions compared with laboratory mini-flumes. A greater hydraulic shear was required to initiate erosion in the field compared to the mini-flume because of the greater aggregate and clod size and stability. Once erosion was initiated, however, the rate of erosion as a function of hydraulic shear was greater under field conditions because of the greater potential for slaking upon wetting and the greater soil surface area exposed to hydraulic shear. Erosion tests under controlled laboratory conditions with the mini-flume allowed individual soil variables to be studied. Attempts to relate rill erosion to a group soil properties had limited success. When individual soil properties were isolated and studied separately or grouped separately, some trends were identified. For example, the effect of organic carbon on rill erodibility was high in kaolinitic soils, low in smectitic soils, and intermediate in the soils dominated by illite. Slow prewetting and aging increased the cohesion forces between soil particles and decreased rill erodibility. Quick prewetting increased aggregate slaking and increased erodibility. The magnitude of the effect of aging depended upon soil type. The effect of clay mineralogy was evaluated on sand/clay mixtures with montmorillonite (M), Illite (I), and kaolinite (K) clays. Montmorillonite/sand mixtures were much less erodible than either illite or kaolonite sand mixtures. Na-I and Na-K sand mixtures were more erodible than Ca-I and Ca-K due to increased strength from ionic bonding and suppression of repulsive charges by Ca. Na-M was less erodiblethan Ca-M due to increased surface resulting from the accessibility of internal surfaces due to Na saturation. Erodibility decreased when salt concentration was high enough to cause flocculation. This occurred between 0.001 mole L-1 and 0.01 mole L-1. Measuring rill erodibility in mini-flumes enables the measurement of cohesive forces between particles and enhances our ability to learn more about cohesive forces resisting soil detachment under concentrated water flow.
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4

Padget, C. D. W., D. R. M. Pattison, D. P. Moynihan, and O. Beyssac. Pyrite and pyrrhotite in a prograde metamorphic sequence, Hyland River region, SE Yukon: implications for orogenic gold. Natural Resources Canada/CMSS/Information Management, 2021. http://dx.doi.org/10.4095/328987.

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The distribution of pyrite and pyrrhotite is documented within an andalusite-sillimanite type (high-temperature, low-pressure) metasedimentary succession exposed in the Hyland River region of southeastern Yukon, Canada. The following metamorphic zones are recognized: chlorite, biotite, cordierite/staurolite (porphyroblast-in), andalusite, sillimanite, and K-feldspar + sillimanite. Pyrite occurs in the chlorite zone through the biotite zone, while pyrrhotite occurs from the chlorite zone to K-feldspar + sillimanite zone. The pyrite-pyrrhotite transition, therefore, occupies an interval in the chlorite and lower biotite zones that is terminated upgrade by a pyrite-out isograd in the upper part of the biotite zone or lowest grade part of the cordierite/staurolite zone. Pressure and temperature conditions of the rocks were estimated from phase equilibrium modelling and from Raman spectroscopy of carbonaceous material (RSCM) thermometry. Modelling indicates pressures of 3.7-4.1 kbar with temperatures of ~425 °C at the biotite isograd, 560-570 °C for chlorite-out/porphyroblast-in, ~575 °C for andalusite-in, 575-600 °C for the sillimanite isograd, and 645-660 °C at the K-feldspar + sillimanite isograd. RSCM temperatures are greater than or equal to 420 °C in the Chl zone, 500 °C at the Bt isograd, 525-550 °C for porphyroblast-in isograd, ~550 °C at the And isograd, and 580 °C at the Sil isograd. These results suggest the pyrite-pyrrhotite transition occurs from less than or equal to 420°C to ~560 °C. Thermodynamic modelling shows 0.6 wt. % H2O is released during metamorphism over the ~140 °C interval of the pyrite-pyrrhotite transition. The gradual release of fluid in the biotite zone is interpreted to have broadened the pyrite-pyrrhotite transition compared to other studies that predict a small interval of vigorous fluid release associated with volumetric chlorite consumption. Samples from the pyrite-pyrrhotite transition zone contain lower whole rock and pyrite Au values than samples from unmetamorphosed/lower rocks, suggesting that Au was removed from the rock at conditions below the pyrite-pyrrhotite transition (<420 °C). The chlorite zone and higher-grade metamorphic rocks of the Hyland River area do not appear to be a plausible source region for orogenic gold.
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5

Jackson, G. D. Bedrock geology, northwest part of Nuluujaak Mountain, Baffin Island, Nunavut, part of NTS 37-G/5. Natural Resources Canada/CMSS/Information Management, 2021. http://dx.doi.org/10.4095/314670.

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The map area lies about 40 km northwest of Baffinland's iron mine. Dykes of unit mAnA3 within unit mAnA2 suggest that unit mAnA2 predates unit mAnA3. Unit nAMqf, basal Mary River Group unit, includes regolith material from units mAnA2 and mAnA3. Unit mAnAm may include some dykes of unit nAMb. The Mary River Group was deposited in a volcanic-arc environment, yielding zircon U-Pb ages mostly in the range of 2.88 to 2.72 Ga. Iron-formation (unit nAMi) is approximately 276 m thick locally, with oxide facies (unit nAMio) being most abundant. The quartzite triangle west of 'Iron lake' (unofficial name) may be a small horst. The main east-west-trending synclinal fold, including the area around 'Iron lake' and the no. 4 ore deposit, is upright, nearly isoclinal, and plunges mostly easterly at both ends with small scale anticlines and synclines in the middle. Magnetite constitutes about 75% of high-grade iron deposits in the north limb, whereas hematite predominates in south-limb deposits. K-Ar and Rb-Sr ages indicate middle Paleoproterozoic overprinting. Central Borden Fault Zone was active at ca. 1.27 Ga and during or after Ordovician time. Note: please be aware that the information contained in CGM 408 is based on legacy data from the 1960-1990s and that it has been superseded by regional-scale information contained in CGM 403.
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