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Journal articles on the topic 'High-k materials'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 July 2024

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1

Specht, Michael, Martin Staedele, Franz Hofmann, Hans Reisinger, Michael Grieb, and Lothar Risch. "High-K Materials for Nonvolatile Memories." ECS Transactions 1, no. 5 (December 21, 2019): 63–73. http://dx.doi.org/10.1149/1.2209256.

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2

Alessandri, Mauro, Rossella Piagge, Stefano Alberici, Enrico Bellandi, Massimo Caniatti, Gabriella Ghidini, Alberto Modelli, et al. "High-k Materials in Flash Memories." ECS Transactions 1, no. 5 (December 21, 2019): 91–105. http://dx.doi.org/10.1149/1.2209258.

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3

Na, Yoon-Soo, Tae-Young Lim, Jin-Ho Kim, Hyo-Soon Shin, Jong-Hee Hwang, and Yong-Soo Cho. "Low k Materials for High Frequency High Integration Modules." Journal of the Korean Ceramic Society 46, no. 4 (July 31, 2009): 413–18. http://dx.doi.org/10.4191/kcers.2009.46.4.413.

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4

WU, De-Qi. "Development of High-K Gate Dielectric Materials." Journal of Inorganic Materials 23, no. 5 (October 23, 2008): 865–71. http://dx.doi.org/10.3724/sp.j.1077.2008.00865.

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5

Seidel, P., M. Geyer, D. Lehninger, F. Schneider, V. Klemm, and J. Heitmann. "(Invited) Germanium Nanostructures in High-K Materials." ECS Transactions 53, no. 1 (May 2, 2013): 237–43. http://dx.doi.org/10.1149/05301.0237ecst.

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6

TSUNEYUKI, Shinji. "High-Pressure Materials Science with K Computer." Review of High Pressure Science and Technology 23, no. 2 (2013): 88–93. http://dx.doi.org/10.4131/jshpreview.23.88.

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7

Shimoga, Ganesh, and Sang-Youn Kim. "High-k Polymer Nanocomposite Materials for Technological Applications." Applied Sciences 10, no. 12 (June 20, 2020): 4249. http://dx.doi.org/10.3390/app10124249.

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Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites with high dielectric constant (high-k) properties are widely applicable in the technological sectors including gate dielectrics, actuators, infrared detectors, tunable capacitors, electro optic devices, organic field-effect transistors (OFETs), and sensors. In this short colloquy, we provided an overview of a few remarkable high-k polymer nanocomposites of material science interest from recent decades.

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8

Lu, Feng Ming, Jiang Shao, Xiao Yu Liu, and Xing Hao Wang. "Research on TDDB Effect in High-k Materials." Advanced Materials Research 548 (July 2012): 203–8. http://dx.doi.org/10.4028/www.scientific.net/amr.548.203.

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With continual scaling of ICs, the thickness of gate oxide becomes thinner and thinner which affects the reliability of semiconductor device greatly. The mechanism of time-dependent dielectric breakdown (TDDB) was analyzed. Six mathematical models of TDDB which were divided according to the position of defects and the physical property of charged particles were discussed. Then the dielectric breakdown characteristic of high k dielectrics and the relationships between the breakdown electric field, field acceleration parameter and dielectric constant were analyzed in detail. Finally, the relationships and mathematical models were verified by experimental data which provided theoretical basis for the choosing and use of high k materials.

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9

Benner, F., S. Haas, F. Schneider, V. Klemm, G. Schreiber, J. Von Borany, and J. Heitmann. "(Invited) Semiconductor Nanocrystals Embedded in High-k Materials." ECS Transactions 45, no. 3 (April 27, 2012): 9–16. http://dx.doi.org/10.1149/1.3700867.

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10

Rollo, Serena, Dipti Rani, Wouter Olthuis, and César Pascual García. "High performance Fin-FET electrochemical sensor with high-k dielectric materials." Sensors and Actuators B: Chemical 303 (January 2020): 127215. http://dx.doi.org/10.1016/j.snb.2019.127215.

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11

Singh, Rajenda, and Richard K. Ulrich. "High and Low Dielectric Constant Materials." Electrochemical Society Interface 8, no. 2 (June 1, 1999): 26–30. http://dx.doi.org/10.1149/2.f06992if.

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Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reported for relaxor ferroelectric (k = 24,700 at 1 kHz).

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12

Bennett, J., M. Quevedo-Lopez, and S. Satyanarayana. "Characterizing high-k and low-k dielectric materials for semiconductors: Progress and challenges." Applied Surface Science 252, no. 19 (July 2006): 7167–71. http://dx.doi.org/10.1016/j.apsusc.2006.02.087.

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13

Clark, Robert. "Emerging Applications for High K Materials in VLSI Technology." Materials 7, no. 4 (April 10, 2014): 2913–44. http://dx.doi.org/10.3390/ma7042913.

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14

Nakamura, Keisuke, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, and Kouichi Ono. "Plasma etching of high-k and metal gate materials." Vacuum 80, no. 7 (May 2006): 761–67. http://dx.doi.org/10.1016/j.vacuum.2005.11.017.

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15

Cho, Kyeongjae. "First-principles modeling of high-k gate dielectric materials." Computational Materials Science 23, no. 1-4 (April 2002): 43–47. http://dx.doi.org/10.1016/s0927-0256(01)00209-9.

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16

Choi, J. H., Y. Mao, and J. P. Chang. "Development of hafnium based high-k materials—A review." Materials Science and Engineering: R: Reports 72, no. 6 (July 2011): 97–136. http://dx.doi.org/10.1016/j.mser.2010.12.001.

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17

Robertson, John, and Robert M. Wallace. "High-K materials and metal gates for CMOS applications." Materials Science and Engineering: R: Reports 88 (February 2015): 1–41. http://dx.doi.org/10.1016/j.mser.2014.11.001.

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18

Brijs, B., C. Huyghebaert, S. Nauwelaerts, M. Caymax, W. Vandervorst, K. Nakajima, K. Kimura, et al. "Advanced characterization of high-k materials: A nuclear approach." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190, no. 1-4 (May 2002): 505–9. http://dx.doi.org/10.1016/s0168-583x(02)00468-8.

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19

Zhou, Di, Li-Xia Pang, Da-Wei Wang, and Ian M. Reaney. "BiVO4 based high k microwave dielectric materials: a review." Journal of Materials Chemistry C 6, no. 35 (2018): 9290–313. http://dx.doi.org/10.1039/c8tc02260g.

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We precis recent studies on doped BiVO₄ ceramics in terms of A site, B site and A/B site complex substitutions. Low sintering temperature (<800 °C), high ε_r and near zero temperature coefficient values could be obtained in solid solution and composite ceramics.

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20

Fiorentini, Vincenzo, Pietro Delugas, Alessio Filippetti, and Geoffrety Pourtois. "Dielectric Properties of High-K Materials : a Theoretical View." ECS Transactions 3, no. 3 (December 21, 2019): 309–14. http://dx.doi.org/10.1149/1.2355722.

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21

Barth, Stefan, Michael Arnold, Dieter Grützmann, Beate Pawlowski, Peter Rothe, and Thomas Bartnitzek. "Low-Sintering High-k Materials for an LTCC Application." International Journal of Applied Ceramic Technology 6, no. 1 (January 2009): 35–40. http://dx.doi.org/10.1111/j.1744-7402.2008.02313.x.

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22

Pereira, L., H. Águas, E. Fortunato, and R. Martins. "Nanostructure characterization of high k materials by spectroscopic ellipsometry." Applied Surface Science 253, no. 1 (October 2006): 339–43. http://dx.doi.org/10.1016/j.apsusc.2006.06.007.

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23

Nishiyama, Akira, Yoshiki Kamata, Ryosuke Iijima, Masahiro Koike, Tsunehiro Ino, Masato Koyama, Yuuichi Kamimuta, et al. "Characterization of high-k materials for the advancement of high-speed ULSIs." e-Journal of Surface Science and Nanotechnology 1 (2003): 116–19. http://dx.doi.org/10.1380/ejssnt.2003.116.

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24

Li, M., Z. Zhang, D. Yu, Ivana McCarthy, Sheron Shamuilia, Valeri V. Afanas'ev, and S. A. Campbell. "Second Generation High-k Gate Insulators." Advances in Science and Technology 45 (October 2006): 1342–50. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1342.

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Very high (k>25) permittivity materials have been investigated as a second step high-k gate insulator. These are all formed by adding other materials to the basic HfO2. Hafnium titanate thin films were deposited by chemical vapor deposition (CVD). It was observed that both the interfacial layer (IL) EOT and the permittivity increase with Ti content and that films with higher Ti content are also more immune to crystallization. Permittivities as high as 50 were achieved. In the MOSFET devices with the hafnium titanate films, normal transistor characteristics were observed, including electron mobility degradation. In SrHfO3 films, deposited by physical vapor deposition (PVD), a permittivity as high as 35 was achieved. These films appear to be highly stable upon high temperature annealing, but show a thick, anomalous interfacial layer.

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25

Susarla, Sandhya, Thierry Tsafack, Peter Samora Owuor, Anand B. Puthirath, Jordan A. Hachtel, Ganguli Babu, Amey Apte, et al. "High-K dielectric sulfur-selenium alloys." Science Advances 5, no. 5 (May 2019): eaau9785. http://dx.doi.org/10.1126/sciadv.aau9785.

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Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

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26

Kita, Koji, Toshitake Takahashi, Hideyuki Nomura, Sho Suzuki, Tomonori Nishimura, and Akira Toriumi. "Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization." Applied Surface Science 254, no. 19 (July 2008): 6100–6105. http://dx.doi.org/10.1016/j.apsusc.2008.02.158.

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27

Barbakadze, Khatuna, Witold Brostow, Nathalie Hnatchuk, Giorgi Lekishvili, Badri Arziani, Krzysztof Zagórski, and Nodar Lekishvili. "Antibiocorrosive Hybrid Materials with High Durability." Chemistry & Chemical Technology 15, no. 4 (November 25, 2021): 500–511. http://dx.doi.org/10.23939/chcht15.04.500.

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We have developed novel antibiocorrosive multifunctional hybrid materials based on functionalizedperfluoroalkylmethacrylate copolymerswith epoxy groups in main chainsand selected biologically active compounds.The hybrids are transparent, showgood adhesion to various surfaces (plastic, wood),high viscoelastic recovery in scratch testing,low wear rates and glass transitions above 323 K. No phase separation is seen in scanning electron micrography. Enhanced mechanical strength and good abrasion resistance are advantages for uses of our protective and antibiocorrosive coatings in various applications including protection of cultural heritage.

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28

Bellandi, Enrico, Barbara Crivelli, and Mauro Alessandri. "Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries." Solid State Phenomena 92 (May 2003): 15–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.92.15.

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29

Park, Min-Hee, Seol Ryu, Young-Kyu Han, and Yoon-Sup Lee. "High Hydrogen Capacity and Reversibility of K-Decorated Silicon Materials." Bulletin of the Korean Chemical Society 33, no. 5 (May 20, 2012): 1719–21. http://dx.doi.org/10.5012/bkcs.2012.33.5.1719.

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30

D, Venkata Ratnam. "Effect of High-K Dielectric materials on Mobility of Electrons." International Journal of Emerging Trends in Engineering Research 8, no. 2 (February 15, 2020): 314–16. http://dx.doi.org/10.30534/ijeter/2020/12822020.

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31

Samanta, S. K., Won Jong Yoo, Ganesh Samudra, Eng Soon Tok, L. K. Bera, and N. Balasubramanian. "Tungsten nanocrystals embedded in high-k materials for memory application." Applied Physics Letters 87, no. 11 (September 12, 2005): 113110. http://dx.doi.org/10.1063/1.2045555.

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32

Zhao, C. Z., S. Taylor, M. Werner, P. R. Chalker, R. J. Potter, J. M. Gaskell, and A. C. Jones. "High-k materials and their response to gamma ray radiation." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 1 (2009): 411. http://dx.doi.org/10.1116/1.3071848.

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33

Eon, D., V. Raballand, G. Cartry, M. C. Peignon-Fernandez, and Ch Cardinaud. "Etching of low-k materials in high density fluorocarbon plasma." European Physical Journal Applied Physics 28, no. 3 (November 23, 2004): 331–37. http://dx.doi.org/10.1051/epjap:2004195.

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34

Tappin, Peter, Rajat Mahapatra, Nicolas G. Wright, Praneet Bhatnagar, and Alton B. Horsfall. "Simulation Study of High-k Materials for SiC Trench MOSFETs." Materials Science Forum 556-557 (September 2007): 839–42. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.839.

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This report investigates the advantages of high-k materials as gate dielectrics for high power SiC trench MOSFET devices, by means of TCAD simulation. The study makes a comparison between the breakdown characteristics of gate dielectrics comprising SiO2, HfO2 and TiO2. I-V and Transfer functions show forward characteristics with on-state resistivity of 8.27 m*⋅cm2, 8.65 m*⋅cm2, 15.8 m*⋅cm2 for the respective devices, at a gate voltage of 20 V. The threshold voltage is 10 V for all devices. The blocking voltage for the HfO2 and TiO2 is increased from 1800 V (for the SiO2 device) to 2200 V. With a peak electric field of 12 MV/cm through the oxide of the SiO2 device is reduced to 3.2 MV/cm for the HfO2 and 2.3 MV/cm for the TiO2 devices.

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35

BERSUKER, GENNADI, BYOUNG HUN LEE, and HOWARD R. HUFF. "Novel Dielectric Materials for Future Transistor Generations." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 221–39. http://dx.doi.org/10.1142/s012915640600362x.

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Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k transistors. The quality of the SiO 2-like layer at the high-k/ Si substrate interface, as well as dielectric interaction with the gate electrode, may significantly affect device characteristics.

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36

Stoneham, A. M. "Why model high-k dielectrics?" Journal of Non-Crystalline Solids 303, no. 1 (May 2002): 114–22. http://dx.doi.org/10.1016/s0022-3093(02)00966-3.

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37

Guan, J. J., Glenn W. Gale, G. Bersuker, M. Jackson, and Howard R. Huff. "Chemical Processing and Materials Compatibility of High-K Dielectric Materials for Advanced Gate Stacks." Solid State Phenomena 76-77 (January 2001): 19–22. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.19.

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38

Borshchov, V. M., O. M. Listratenko, M. A. Protsenko, I. T. Tymchuk, O. V. Kravchenko, O. V. Syddia, M. I. Slipchenko, and B. M. Chichkov. "High-thermally conductive composite polyimide materials." Radiotekhnika, no. 210 (September 28, 2022): 150–59. http://dx.doi.org/10.30837/rt.2022.3.210.12.

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This review is devoted to analysis of works in the field of creating electrically insulating heat-conducting polyimide composite films based on powders of micro-, submicro- or nano-sized fillers with high dielectric and heat-conducting properties for use as effective thermal interface materials in various electronic devices in instrument making. Particular attention is paid to studies on the influence of the size of nano- and microparticles of inorganic fillers on the heat-nducting, dielectric, and physical-mechanical properties of nanocomposite polyimide materials. The analysis of the results of work on the study of the dependence of thermal conductivity on the ratios of micron and nanosized particles in mixtures and their number in polyimides and on the conditions of their polymerization was carried out to confirm the possibility of increasing the thermal conductivity values of promising polyimide materials from 0.12 W/(m•K) up to 5¸10 W/ (m•K). It is noted that the highest thermal conductivity of industrially produced modern polyimide films on market does not exceed 0.75¸0.8 W/(m•K). The task of creating inexpensive, but high-quality heat-conductive polyimide composite materials with sufficiently high thermal conductivity without deteriorating their strength and ductility characteristics is currently relevant and technically in demand.

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39

Wu, Chia-Sung, Hsing-Chung Liu, Zhi-Ping Liu, and Hsien-Chin Chiu. "Compact K-band bandpass filter on high-k LiNbO3 substrate." Solid-State Electronics 51, no. 6 (June 2007): 965–68. http://dx.doi.org/10.1016/j.sse.2007.03.020.

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40

Onsia, Bart, David Hellin, Martine Claes, A. Maes, Stefan De Gendt, and Marc M. Heyns. "Introduction of High-k Materials into Wet Processing, Analysis and Behavior." Solid State Phenomena 92 (May 2003): 19–22. http://dx.doi.org/10.4028/www.scientific.net/ssp.92.19.

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41

Rao, Venkateswara P., Brian Besancon, Vincent Omarjee, and Christian Dussarrat. "Development of Lanthanide Precursors as Dopants for Advanced High-k Materials." ECS Transactions 33, no. 3 (December 17, 2019): 145–56. http://dx.doi.org/10.1149/1.3481601.

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42

Dewulf, D., A. Hardy, S. Van Elshocht, C. De Dobbelaere, W. C. Wang, M. Badylevich, V. V. Afanas'ev, S. De Gendt, and M. K. Van Bael. "Gadolinium -niobates and -tantalates: Amorphous High-k Materials by Aqueous CSD." Journal of The Electrochemical Society 159, no. 6 (2012): G75—G79. http://dx.doi.org/10.1149/2.072206jes.

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43

Martin, D. M., J. Enlund, O. Kappertz, and J. Jensen. "Comparing XPS and ToF-ERDA measurement of high-k dielectric materials." Journal of Physics: Conference Series 100, no. 1 (March 1, 2008): 012036. http://dx.doi.org/10.1088/1742-6596/100/1/012036.

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44

Alessandri, M., A. Del Vitto, R. Piagge, A. Sebastiani, C. Scozzari, C. Wiemer, L. Lamagna, M. Perego, G. Ghidini, and M. Fanciulli. "Rare earth-based high-k materials for non-volatile memory applications." Microelectronic Engineering 87, no. 3 (March 2010): 290–93. http://dx.doi.org/10.1016/j.mee.2009.06.022.

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45

Jiongxin Lu and C. Wong. "Recent advances in high-k nanocomposite materials for embedded capacitor applications." IEEE Transactions on Dielectrics and Electrical Insulation 15, no. 5 (October 2008): 1322–28. http://dx.doi.org/10.1109/tdei.2008.4656240.

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46

Sharma, Rajnish K., Ashok Kumar, and John M. Anthony. "Advances in high-k dielectric gate materials for future ULSI devices." JOM 53, no. 6 (June 2001): 53–55. http://dx.doi.org/10.1007/s11837-001-0105-9.

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47

Wang, Yan, Junrong Yu, Jing Zhu, and Zuming Hu. "Hyperbranched polybenzoxazoles incorporated polybenzoxazoles for high-performance and low-K materials." Journal of Polymer Science Part A: Polymer Chemistry 54, no. 11 (December 28, 2015): 1623–32. http://dx.doi.org/10.1002/pola.28018.

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48

Lo, Wai, Arvind Kamath, Shreyas Kher, Craig Metzner, Jianguo Wen, and Zhihao Chen. "Deposition and characterization of HfO2 high k dielectric films." Journal of Materials Research 19, no. 6 (June 2004): 1775–82. http://dx.doi.org/10.1557/jmr.2004.0247.

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As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their higher k values (e.g., 15–50) raise the physical thickness of the dielectrics that provide similar equivalent thickness of a thinner SiO2 film. In order for the high k materials to be applicable in CMOS devices, there should exist deposition technologies that can deposit highly uniform films over Si wafers with diameters as large as 200 mm. This report discusses the deposition process and the correlation between the growth conditions, structural and dielectric properties of HfO2, which is one of the most promising high k dielectric materials. Judging from the thickness uniformity, surface roughness, k value, and interfacial density of state of the HfO2 films, the metalorganic chemical vapor deposition technique was identified to be suitable for growing HfO2 films targeted at applications as CMOS gate dielectrics.

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49

Faist, Jérôme. "Lasing high in k-space." Nature Photonics 3, no. 1 (January 2009): 11–12. http://dx.doi.org/10.1038/nphoton.2008.260.

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50

SUGAWARA, K., N. ARAI, A. KOUZUKI, and H. HIROSE. "ESR STUDIES ON GMR RELATED MATERIALS III: ESR OF Mn IN La0.9Ca0.1MnO3." Modern Physics Letters B 14, no. 29 (December 20, 2000): 1033–43. http://dx.doi.org/10.1142/s0217984900001336.

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ESR measurements have been done on La 0.9 Ca 0.1 MnO 3 from 4 K up to about 760 K. Two kinds of spectra (the high- and low-field signals) are observed below about 220 K, and clear signals above ≃233 K . The ESR linewidth, ΔH PP , of the high-field signal with g≃2 is nearly proportional to temperature times magnetic moment. The ESR intensity becomes maximum at around 233 K. Above 300 K, ΔH PP is nearly proportional to exp (-600/T), and the intensity follows Curie's law above 600 K, but gradually deviates upward from it with decreasing temperature below about 600 K, presumably due to the "spin-cluster" formation.

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