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Relevant bibliographies by topics / High-k Oxide

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Academic literature on the topic 'High-k Oxide'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 May 2022

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Journal articles on the topic "High-k Oxide"

1

Kim, In-Goo, Eun-Ji Oh, Yong-Soo Kim, Sok-Won Kim, In-Sung Park, and Won-Kyu Lee. "Thermal Conductivity Measurement of High-k Oxide Thin Films." Journal of the Korean Vacuum Society 19, no. 2 (March 30, 2010): 141–47. http://dx.doi.org/10.5757/jkvs.2010.19.2.141.

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Gillen, R., and J. Robertson. "Electronic structure of lanthanide oxide high K gate oxides." Microelectronic Engineering 109 (September 2013): 72–74. http://dx.doi.org/10.1016/j.mee.2013.03.011.

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Kim, Young Mo, Chulkwon Park, Taewoo Ha, Useong Kim, Namwook Kim, Juyeon Shin, Youjung Kim, Jaejun Yu, Jae Hoon Kim, and Kookrin Char. "High-k perovskite gate oxide BaHfO3." APL Materials 5, no. 1 (January 2017): 016104. http://dx.doi.org/10.1063/1.4974864.

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Maple, M. Brian. "High Tc Oxide Superconductors." MRS Bulletin 14, no. 1 (January 1989): 20–24. http://dx.doi.org/10.1557/s0883769400053859.

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The recent revolution in high temperature superconducting materials has generated a wave of intense excitement and activity that has swept through the scientific community, attracting the attention of the news media and general public as well. The reason for this is twofold: the unexpected occurrence of superconductivity at such high temperatures is of immense scientific interest, and the new high temperature oxide superconductors may have important technological applications.Based on a large amount of experimental information and (presumed!) theoretical understanding, the prevailing view prior to 1986, when high temperature superconductivity in oxides was discovered, was that the maximum value of the superconducting transition temperature Tc of any material would not increase much above ˜23 K, the high Tc record held since 1973 by the A15 compound Nb3Ge. In fact, between 1911 (the year H. Kammerlingh Onnes discovered superconductivity) and 1986, Tc only increased at an average rate of ˜0.25 K per year. However, within the last two years the maximum Tc value of the new copper oxide super-conductors has risen at an average rate of ˜50 K per year to its present value of ˜125 K! Thus, superconductivity near or above room temperature no longer seems out of the question, as it did a few short years ago! Moreover, the oxides were generally regarded as the least likely candidates for high Tc superconductivity due to their low concentrations of charge carriers. An understanding of the origin and nature of high Tc superconductivity in the new oxide compounds constitutes one of the most important and challenging scientific problems that has emerged in recent years.

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Chang, Edward Yi, Hai-Dang Trinh, Yueh-Chin Lin, Hiroshi Iwai, and Yen-Ku Lin. "Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications." MRS Proceedings 1538 (2013): 291–302. http://dx.doi.org/10.1557/opl.2013.585.

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ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

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Li, Flora M., Bernhard C. Bayer, Stephan Hofmann, James D. Dutson, Steve J. Wakeham, Mike J. Thwaites, William I. Milne, and Andrew J. Flewitt. "High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition." Applied Physics Letters 98, no. 25 (June 20, 2011): 252903. http://dx.doi.org/10.1063/1.3601487.

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Zhao, C., T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, et al. "Ternary rare-earth metal oxide high-k layers on silicon oxide." Applied Physics Letters 86, no. 13 (March 28, 2005): 132903. http://dx.doi.org/10.1063/1.1886249.

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Osten, H. J., E. Bugiel, and A. Fissel. "Epitaxial praseodymium oxide: a new high-K dielectric." Solid-State Electronics 47, no. 12 (December 2003): 2161–65. http://dx.doi.org/10.1016/s0038-1101(03)00190-4.

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Xiong, K., and J. Robertson. "Point defects in HfO2 high K gate oxide." Microelectronic Engineering 80 (June 2005): 408–11. http://dx.doi.org/10.1016/j.mee.2005.04.098.

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Butterbaugh, Jeffery W., Steven L. Nelson, and Thomas J. Wagener. "Uniform Ultrathin Oxide Growth for High-k Preclean." Solid State Phenomena 103-104 (April 2005): 15–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.103-104.15.

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Dissertations / Theses on the topic "High-k Oxide"

1

Liu, Dameng. "High-K gate oxides for future complementary metal-oxide-semiconductor transistors." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611517.

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Tewg, Jun-Yen. "Zirconium-doped tantalum oxide high-k gate dielectric films." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/1346.

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A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The films electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

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Li, Huanglong. "First principle modelling of high-K oxide on Ge." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.707988.

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Lu, Jiang. "Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology." Texas A&M University, 2005. http://hdl.handle.net/1969.1/4714.

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A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The film's electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx impacted the electrical properties. The doping process improved the effective dielectric constant, reduced the fixed charge density, and increased the dielectric strength. The leakage current density also decreased with the Hf doping concentration. MOS capacitors with sub-2.0 nm equivalent oxide thickness (EOT) have been achieved with the lightly Hf-doped TaOx. The low leakage currents and high dielectric constants of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 ÃÂ tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped TaOx films and the Si substrate to engineer the high-k/Si interface layer formation and properties. The electrical characterization result shows that the insertion of a 5 ÃÂ TaNx between the doped TaOx films and the Si substrate decreased the film's leakage current density and improved the effective dielectric constant (keffective) value. The improvement of these dielectric properties can be attributed to the formation of the TaOxNy interfacial layer after high temperature O2 annealing. The main drawback of the TaNx interface layer is the high interface density of states and hysteresis, which needs to be decreased. Advanced metal nitride gate electrodes, e.g., tantalum nitride, molybdenum nitride, and tungsten nitride, were investigated as the gate electrodes for atomic layer deposition (ALD) HfO2 high-k dielectric material. Their physical and electrical properties were affected by the post metallization annealing (PMA) treatment conditions. Work functions of these three gate electrodes are suitable for NMOS applications after 800ÃÂ°C PMA. Metal nitrides can be used as the gate electrode materials for the HfO2 high-k film. The novel high-k gate stack structures studied in this study are promising candidates to replace the traditional poly-Si-SiO2 gate stack structure for the future CMOS technology node.

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Li, Wenmei. "CHARACTERIZATION OF HIGH-K GATE STACKS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS." NCSU, 2001. http://www.lib.ncsu.edu/theses/available/etd-20010202-100109.

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The purpose of this research has been to use off-line characterization techniques to establish material-specific properties of gate-stack constituents (i.e., high-k dielectric stacks and electrodes) and complete gate-stack structures. Hence, the characterization methodologies were established to evaluate high-k dielectrics at various processing levels, which, in part, determine the final characteristics of an advanced gate-stack device. Material systems that were investigated include: Al-O, Hf-Si-O, Zr-Si-O, Ti-O, Ta-O and Sr-Ti-O. Various physical and electrical characterization techniques were used to establish fundamental understandings of the materials selected, thin-film growth/deposition processes, and gate-stack structures. General conclusions for stable and unstable gate-dielectric materials have been establishedregarding the presence of a problematic interfacial layer at the Si/dielectric interface, graded dielectric layers, and the stability of gate electrodes on high-k dielectrics.The nanometer-scale chemistry of a gate-stack capacitor whose expected structure is Si/SiOxNy/Ta2O5/TiN/Al was studied by high-resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. Elemental profiles with near-atomic-level resolution for Si, Ti, N, Al, and O demonstrate that the device structure deviates drastically from the expectation and is chemically complex.It is concluded that the graded distribution of certain elements across the gate-stack capacitor completely precludes a band-structure model that assumes abrupt interfaces and chemically discrete layers. This study impacted on subsequent interpretations of flatband voltage extractions and electrical degradation following backside metallization/postmetallization annealing for capacitors whose dielectric-stack was based on Ta-O.Detailed and extensive electrical characterizations of Pt/SiOx/Sr-Ti-O/Si MOS capacitors were carried out to investigate reliability issues in a bi-layer gate dielectric. Based on these studies, models are proposed to describe the carrier transport and dielectric degradation for a Sr-Ti-O capacitor. It is concluded that conduction is dominated by Frenkel-Poole emission from mid-gap trap levels. The trap barrier height is estimated to be 1.51eV. A model based on the atomic and electronic structure of oxygen vacancies can account for the reported leakage-current characteristics. In addition, it is tentatively proposed that anode-hole injection and hole trapping control the dielectric degradation under gate injection.

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Gomeniuk, Yu Y., A. N. Nazarov, S. Monaghan, K. Cherkaoui, E. O’Connor, I. Povey, V. Djara, and P. K. Hurley. "Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35048.

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The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxidesemiconductor (MOS) structure, namely Pd/Al2O3/ In0.53Ga0.47As/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35048

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Marshall, Paul Andrew. "Liquid injection MOCVD of hafnium oxide, silicate and aluminate high-k dielectrics." Thesis, University of Liverpool, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.422113.

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Gao, Yong. "Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics." Diss., The University of Arizona, 2004. http://hdl.handle.net/10150/290136.

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As the MOS devices continue to scale down in feature size, the gate oxide thickness is approaching the nanometer node. High leakage current densities caused by tunneling is becoming a serious problem. Replacing silicon oxide with a high kappa material as the gate dielectrics is becoming very critical. In recent years, research has been focused on a few promising candidates, such as ZrO₂, HfO₂, Al₂O₃, Ta₂O₅, and some silicates. However, unary metal oxides tend to crystallize at relatively low temperatures (less than 700°C). Crystallized films usually have a very small grain size and high leakage current due to the grain boundaries. The alternatives are high κ oxides which are single crystal or amorphous. Silicates remain amorphous at high temperatures, but have some problems such as phase separation, interface reaction, and lower κ value. In this work, we addressed the crystallization problems of zirconium oxide and hafnium oxide thin films. Both of these two thin films were deposited by DC reactive magnetron sputtering so that very dense films were deposited with little damage. A specially designed system was set up in order to have good control of the deposition process. The crystallization behavior of as-deposited amorphous ZrO₂ and HfO₂ films was studied. It was found that the films tended to have higher crystallization temperature when the films were thinner than a critical thickness of approximately 5 nm. However, it was still well below 900°C. The crystallization temperature was significantly increased by sandwiching the high kappa oxide layer between two silica layers. Ultra thin HfO₂ films of 5nm thickness remained amorphous up to 900°C. This is the highest crystallization temperature which has been reported. The mechanisms for this effect are proposed. Electrical properties of these high kappa dielectric films were also studied. It was found that ultra thin amorphous HfO₂ and ZrO₂ films had superior electrical properties to crystalline films. The leakage current density of ultra thin amorphous films was at least two orders of magnitude lower than that of crystallized films. Amorphous films also showed much less hysteresis in the capacitance-voltage curve than uncapped crystallized films. The mechanisms for the electrical property differences between ultra thin crystalline and amorphous films were studied. Due to successful control of the low dielectric interfacial layer thickness, an effective oxide thickness of 1.2 and 1.4 nm was obtained for HfO₂ and ZrO₂ films, respectively.

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Tse, Koon-Yiu. "High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611979.

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Jeon, Yongjoo. "High-k gate dielectric for 100 nm MOSFET application /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004296.

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Books on the topic "High-k Oxide"

1

Michel, Houssa, ed. High-K gate dielectrics. Bristol: Institute of Physics, 2004.

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He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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Houssa, Michael. High k Gate Dielectrics (Materials Science and Engineering). Taylor & Francis, 2003.

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Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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Bianconi, Antonio, Annette Bussmann-Holder, and Hugo Keller. High-Tc Copper Oxide Superconductors and Related Novel Materials: Dedicated to Prof. K. A. Müller on the Occasion of his 90th Birthday. Springer, 2018.

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Book chapters on the topic "High-k Oxide"

1

Bersuker, Gennadi, Keith McKenna, and Alexander Shluger. "Silica and High-k Dielectric Thin Films in Microelectronics." In Oxide Ultrathin Films, 101–18. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527640171.ch5.

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Butterbaugh, Jeffery W., Steven L. Nelson, and Thomas J. Wagener. "Uniform Ultrathin Oxide Growth for High-k Preclean." In Solid State Phenomena, 15–18. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-06-x.15.

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Zhao, Yi. "Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3) for High-k Gate Insulators." In High-k Gate Dielectrics for CMOS Technology, 185–223. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527646340.ch6.

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HENDERSON, T. M., J. C. GREER, G. BERSUKER, A. KORKIN, and R. J. BARTLETT. "EFFECT OF CHEMICAL ENVIRONMENT AND STRAIN ON OXYGEN VACANCY FORMATION ENERGIES AT SILICONSILICON OXIDE INTERFACES." In Defects in High-k Gate Dielectric Stacks, 373–83. Dordrecht: Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4367-8_30.

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Yang, Seung Dong, Kwang Seok Jeong, Ho Jin Yun, Yu Mi Kim, Sang Youl Lee, Sung Kyu Kwon, Jae sub Oh, Hi Deok Lee, and Ga Won Lee. "RTS Noise Analysis in Fin-type Silicon-Oxide-High-k-Oxide-Silicon Flash Memory." In Supplemental Proceedings, 81–86. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118357002.ch11.

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Verma, Shekhar, and Suman Lata Tripathi. "Impact of temperature on 14 nm FINFET with high-K different oxide material." In Intelligent Circuits and Systems, 181–86. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003129103-30.

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Ye, Peide D., Yi Xuan, Yanqing Wu, and Min Xu. "Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model." In Fundamentals of III-V Semiconductor MOSFETs, 173–94. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_7.

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Fissel, Andreas, M. Czernohorsky, R. Dagris, and H. J. Osten. "Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application." In Materials Science Forum, 655–58. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.655.

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Mech, Bhubon Chandra, and Jitendra Kumar. "Study of Effect of High-k Dielectric Gate Oxide on the Performance of SB-GNRFETs." In Lecture Notes in Electrical Engineering, 415–20. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4765-7_44.

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Sano, Kenichi, Akira Izumi, Atsuro Eitoku, James Snow, L. Nyns, S. Kubicek, R. Singanamalla, et al. "Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer." In Solid State Phenomena, 53–56. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.53.

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Conference papers on the topic "High-k Oxide"

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Koide, Yasuo. "High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]." In 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS). IEEE, 2019. http://dx.doi.org/10.1109/icmts.2019.8730974.

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Raeissi, B., J. Piscator, O. Engstrom, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H. J. Osten. "High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy." In ESSDERC 2007 - 37th European Solid State Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/essderc.2007.4430933.

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Freire, Jose A. d. K., Teldo A. S. Pereira, Jusciane Costa e Silva, Gil A. Farias, Valder N. Freire, and Eronides F. da Silva, Jr. "Si- and SiGe- high-k oxide nanostructures for optoelectronic devices." In Integrated Optoelectronic Devices 2005, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2005. http://dx.doi.org/10.1117/12.582773.

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Schmidt, M., C. P. Lu, H. D. B. Gottlob, and H. Kurz. "Metal gate electrodes for rare earth oxide high-k dielectrics." In 2009 3rd International Conference on Signals, Circuits and Systems (SCS 2009). IEEE, 2009. http://dx.doi.org/10.1109/icscs.2009.5412230.

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Rao, Ashutosh, and Gautam Mukhopadhyay. "Gate leakage in hafnium oxide high-k metal gate nMOSFETs." In 2013 International Conference on Advances in Electrical Engineering (ICAEE). IEEE, 2013. http://dx.doi.org/10.1109/icaee.2013.6750369.

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Gottlob, H. D. B., T. Echtermeyer, T. Mollenhauer, M. Schmidt, J. Efavi, T. Wahlbrink, M. C. Lemme, et al. "Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics." In 2006 European Solid-State Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/essder.2006.307660.

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Minhaj, Emdadul Huq, Muhammad Abdur Razzak, Md Majharul Islam, and Md Mohsinur Rahman Adnan. "Performance Enhancement of Multigate FinFETs by Using High-k Stack Oxide." In 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT). IEEE, 2019. http://dx.doi.org/10.1109/icasert.2019.8934656.

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Chism, William W. "Optical Metrology for Ultra-thin Oxide and High-K Gate Dielectrics." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology. AIP, 2003. http://dx.doi.org/10.1063/1.1622458.

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Morris, Stephen J. "Multi-Technology Measurements of Nitrided Oxide and High-K Gate Stacks." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2062949.

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Abermann, S., C. Henkel, O. Bethge, and E. Bertagnolli. "Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k Dielectric stacks." In 2009 10th International Conference on Ultimate Integration on Silicon (ULIS. IEEE, 2009. http://dx.doi.org/10.1109/ulis.2009.4897573.

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Reports on the topic "High-k Oxide"

1

Edgar, James H. High K Oxide Insulated Gate Group III Nitride-Based FETs. Fort Belvoir, VA: Defense Technical Information Center, March 2014. http://dx.doi.org/10.21236/ada622706.

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Miranda, Andre. Understanding the Structure of High-K Gate Oxides - Oral Presentation. Office of Scientific and Technical Information (OSTI), August 2015. http://dx.doi.org/10.2172/1213181.

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Jackson, G. D. Bedrock geology, northwest part of Nuluujaak Mountain, Baffin Island, Nunavut, part of NTS 37-G/5. Natural Resources Canada/CMSS/Information Management, 2021. http://dx.doi.org/10.4095/314670.

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The map area lies about 40 km northwest of Baffinland's iron mine. Dykes of unit mAnA3 within unit mAnA2 suggest that unit mAnA2 predates unit mAnA3. Unit nAMqf, basal Mary River Group unit, includes regolith material from units mAnA2 and mAnA3. Unit mAnAm may include some dykes of unit nAMb. The Mary River Group was deposited in a volcanic-arc environment, yielding zircon U-Pb ages mostly in the range of 2.88 to 2.72 Ga. Iron-formation (unit nAMi) is approximately 276 m thick locally, with oxide facies (unit nAMio) being most abundant. The quartzite triangle west of 'Iron lake' (unofficial name) may be a small horst. The main east-west-trending synclinal fold, including the area around 'Iron lake' and the no. 4 ore deposit, is upright, nearly isoclinal, and plunges mostly easterly at both ends with small scale anticlines and synclines in the middle. Magnetite constitutes about 75% of high-grade iron deposits in the north limb, whereas hematite predominates in south-limb deposits. K-Ar and Rb-Sr ages indicate middle Paleoproterozoic overprinting. Central Borden Fault Zone was active at ca. 1.27 Ga and during or after Ordovician time. Note: please be aware that the information contained in CGM 408 is based on legacy data from the 1960-1990s and that it has been superseded by regional-scale information contained in CGM 403.

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Litaor, Iggy, James Ippolito, Iris Zohar, and Michael Massey. Phosphorus capture recycling and utilization for sustainable agriculture using Al/organic composite water treatment residuals. United States Department of Agriculture, January 2015. http://dx.doi.org/10.32747/2015.7600037.bard.

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Objectives: 1) develop a thorough understanding of the sorption mechanisms of Pi and Po onto the Al/O- WTR; 2) determine the breakthrough range of the composite Al/O-WTR during P capturing from agro- wastewaters; and 3) critically evaluate the performance of the composite Al/O-WTR as a fertilizer using selected plants grown in lysimeters and test-field studies. Instead of lysimeters we used pots (Israel) and one- liter cone-tainers (USA). We conducted one field study but in spite of major pretreatments the soils still exhibited high enough P from previous experiments so no differences between control and P additions were noticeable. Due to time constrains the field study was discontinued. Background: Phosphorous, a non-renewable resource, has been applied extensively in fields to increase crop yield, yet consequently has increased the potential of waterway eutrophication. Our proposal impetus is the need to develop an innovative method of P capturing, recycling and reuse that will sustain agricultural productivity while concurrently reducing the level of P discharge from and to agricultural settings. Major Conclusions & Achievements: An innovative approach was developed for P removal from soil leachate, dairy wastewater (Israel), and swine effluents (USA) using Al-based water treatment residuals (Al- WTR) to create an organic-Al-WTR composite (Al/O-WTR), potentially capable of serving as a P fertilizer source. The Al-WTR removed 95% inorganic-P, 80% to 99.9% organic P, and over 60% dissolved organic carbon from the agro-industrial waste streams. Organic C accumulation on particles surfaces possibly enhanced weak P bonding and facilitated P desorption. Analysis by scanning electron microscope (SEM- EDS), indicated that P was sparsely sorbed on both calcic and Al (hydr)oxide surfaces. Sorption of P onto WW-Al/O-WTR was reversible due to weak Ca-P and Al-P bonds induced by the slight alkaline nature and in the presence of organic moieties. Synchrotron-based microfocused X-ray fluorescence (micro-XRF) spectrometry, bulk P K-edge X-ray absorption near edge structure spectroscopy (XANES), and P K-edge micro-XANES spectroscopy indicated that adsorption was the primary P retention mechanism in the Al- WTR materials. However, distinct apatite- or octocalciumphosphatelike P grains were also observed. Synchrotron micro-XRF mapping further suggested that exposure of the aggregate exteriors to wastewater caused P to diffuse into the porous Al-WTR aggregates. Organic P species were not explicitly identified via P K-edge XANES despite high organic matter content, suggesting that organic P may have been predominantly associated with mineral surfaces. In screen houses experiments (Israel) we showed that the highest additions of Al/O-WTR (5 and 7 g kg⁻¹) produced the highest lettuce (Lactuca sativa L. var. longifolial) yield. Lettuce yield and P concentration were similar across treatments, indicating that Al/O- WTR can provide sufficient P to perform similarly to common fertilizers. A greenhouse study (USA) was utilized to compare increasing rates of swine wastewater derived Al/O-WTR and inorganic P fertilizer (both applied at 33.6, 67.3, and 134.5 kg P₂O₅ ha⁻¹) to supply plant-available P to spring wheat (TriticumaestivumL.) in either sandy loam or sandy clay loam soil. Spring wheat straw and grain P uptake were comparable across all treatments in the sandy loam, while Al/O-WTR application to the sandy clay loam reduced straw and grain P uptake. The Al/O-WTR did not affect soil organic P concentrations, but did increase phosphatase activity in both soils; this suggests that Al/O-WTR application stimulated microorganisms and enhance the extent to which microbial communities can mineralize Al/O-WTR-bound organic P. Implications: Overall, results suggest that creating a new P fertilizer from Al-WTR and agro-industrial waste sources may be a feasible alternative to mining inorganic P fertilizer sources, while protecting the environment from unnecessary waste disposal.

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