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1

Kutsukake, Ayaka, Shinji Ando, Masayuki Tsushida, Hiromoto Kitahara, and Hideki Tonda. "Influence of Impurities to Deformation Behavior in Magnesium Single Crystal." Key Engineering Materials 345-346 (August 2007): 137–40. http://dx.doi.org/10.4028/www.scientific.net/kem.345-346.137.

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Generally, plastic deformation of magnesium alloys is difficult at room temperature. In order to improve formability of magnesium, impurity elements in magnesium were reduced by vapor deposition technique. Inductively coupled plasma atomic emission spectrometry (ICP-AES) was applied to the determination of trace elements in refined magnesium. To investigate influence of impurity element to deformation behavior, high purity magnesium single crystals were prepared. When the magnesium single crystals are stretched in <11-20> direction, {11-22} <-11-23> pyramidal slips were activated just after yielding in the range of 77K to 293K. The yield stress of high purity magnesium was a half of the stress in raw magnesium.
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2

Bonarski, Bartlomiej J., Erhard Schafler, Borys Mikułowski, and Michael Zehetbauer. "Texture Evolution of Magnesium Single Crystals Deformed by High-Pressure Torsion." Materials Science Forum 584-586 (June 2008): 263–68. http://dx.doi.org/10.4028/www.scientific.net/msf.584-586.263.

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Single crystals of technical purity Magnesium (99.8 wt.%) of initial orientations [ ] 2 1 10 and [ ] 2 2 11 were subjected to HPT deformation at room temperature up to strains of 10. The microstructural evolution has been analyzed by X-ray microtexture investigations and by in-situ stress-strain measurements. The results can be described in terms of shear arising from HPT deformation and - with higher strains - in terms of recrystallization. In crystals with hard orientation[ ] 2 2 11 , these features occur at smaller strains than in crystals with soft orientation [ ] 2 1 10 , i.e. with higher symmetry. In general, the observed textures and strength variations are much stronger than those reported for fcc HPT deformed metals.
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3

Satoh, Shuichi, and Hitoshi Sumiya. "Synthesis of High Purity Diamond Single Crystal." REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY 4, no. 4 (1995): 308–14. http://dx.doi.org/10.4131/jshpreview.4.308.

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4

Darolia, R., W. S. Walston, R. Noebe, A. Garg, and B. F. Oliver. "Mechanical properties of high purity single crystal NiAl." Intermetallics 7, no. 10 (October 1999): 1195–202. http://dx.doi.org/10.1016/s0966-9795(99)00043-6.

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5

Sumiya, Hitoshi, Naohiro Toda, and Shuichi Satoh. "Synthesis of High Purity Diamond Single Crystal. II." REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY 5, no. 2 (1996): 110–15. http://dx.doi.org/10.4131/jshpreview.5.110.

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6

Tomioka, H., H. Yoshizawa, K. Suzuki, Yu V. Milman, N. A. Krapivka, and I. Hashimoto. "Electrical Resistivity of High Purity Chromium Single Crystal." physica status solidi (a) 167, no. 2 (June 1998): 443–48. http://dx.doi.org/10.1002/(sici)1521-396x(199806)167:2<443::aid-pssa443>3.0.co;2-q.

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7

Hayashi, T., M. Kinpara, J. F. Wang, K. Mimura, and M. Isshiki. "Growth of ultra-high purity PbI2 single crystal: (1) Preparation of high purity PbI2." Crystal Research and Technology 43, no. 1 (January 2008): 9–13. http://dx.doi.org/10.1002/crat.200711051.

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8

Spichkin, Y. I., A. M. Tishin, and K. A. Gschneidner. "Elastic properties of a high purity gadolinium single crystal." Journal of Magnetism and Magnetic Materials 204, no. 1-2 (September 1999): 5–10. http://dx.doi.org/10.1016/s0304-8853(99)00435-7.

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9

Yu, Zhiyi, Y. X. Huang, and S. C. Shen. "New shallow donors in high‐purity silicon single crystal." Applied Physics Letters 55, no. 20 (November 13, 1989): 2084–86. http://dx.doi.org/10.1063/1.102090.

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10

Bernhardt, Hendrik, Berit Marx-Glowna, Kai S. Schulze, Benjamin Grabiger, Johann Haber, Carsten Detlefs, Robert Loetzsch, et al. "High purity x-ray polarimetry with single-crystal diamonds." Applied Physics Letters 109, no. 12 (September 19, 2016): 121106. http://dx.doi.org/10.1063/1.4962806.

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11

Belamri, C., S. Belhas, and A. Rivière. "Damping of a high-purity aluminum single crystal at high temperatures." Materials Science and Engineering: A 442, no. 1-2 (December 2006): 142–46. http://dx.doi.org/10.1016/j.msea.2006.05.167.

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12

Khellaf, A., R. M. Emrick, and J. J. Vuillemin. "High-purity palladium single-crystal electrical resistance measurements at high temperature." Journal of Physics F: Metal Physics 17, no. 10 (October 1987): 2081–84. http://dx.doi.org/10.1088/0305-4608/17/10/016.

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13

Aquino, Fran De. "Ultra-Conductive Magnesium." Applied Physics Research 13, no. 2 (June 30, 2021): 35. http://dx.doi.org/10.5539/apr.v13n2p35.

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The improvement of the electrical conductivity of usual metals is limited by the purity of the metal and the ability to grow single crystal structures. Also, it was observed that the AC conductivity of the metal increases when the frequency of the electrical current applied on the conductor increases. Here, we show that the pure Magnesium metal can exhibit an ultrahigh electrical conductivity when it is subjected to 360K temperature, and an electrical current with frequency of the order of 1GHz.
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14

Zhao, Jian Hai, and Yan Ping Lai. "Surface Modification and Preparation of High Purity Nanometer Magnesium Hydroxide Using Impinging Stream." Materials Science Forum 675-677 (February 2011): 847–51. http://dx.doi.org/10.4028/www.scientific.net/msf.675-677.847.

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High purity nanometer magnesium hydroxide is produced by impinging stream reaction crystallization method using bischofite as feedstock. Effects of operation conditions on the impinging stream of Mg (OH)2 are reported and the control factors of purity are confirmed. The morphology of the powder was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Result shows that purity of Mg (OH)2 can reach 99% and the mean size of crystal is 13.5nm. Surface modification of nano-sized magnesium hydroxide using four surface modifiers such as sodium steatite, sodium laurylsulfonate, sodium oleate and sodium silicate were investigated in this paper. The modified magnesium hydroxide has smaller particle size, larger powder contact angle, slower sedimentation velocity, the less in-oil capacity than unmodified sample
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15

Sumiya, Hitoshi. "High-Pressure Synthesis of High-Purity and High-Performance Diamond and cBN Ceramics." Advances in Science and Technology 45 (October 2006): 885–92. http://dx.doi.org/10.4028/www.scientific.net/ast.45.885.

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High-purity, single-phase polycrystalline diamond and cBN have been successfully synthesized by direct conversion sintering from graphite and hBN, respectively, under static high pressure and high temperature. The high-purity polycrystalline diamond synthesized directly from graphite at ≧15 GPa and 2300-2500 °C has a mixed texture of a homogeneous fine structure (grain size : 10-30 nm, formed in a diffusion process) and a lamellar structure (formed in a martensitic process). The polycrystalline diamond has very high hardness equivalent to or even higher than that of diamond crystal. The high-purity polycrystalline cBN synthesized from high-purity hBN at 7.7 GPa and 2300 °C consists of homogeneous fine-grained particles (<0.5 μm, formed in a diffusion process). The hardness of the fine-grained high-purity polycrystalline cBN is obviously higher than that of single-crystal cBN. The fine microstructure features without any secondary phases and extremely high hardness of the nano-polycrystalline diamond and the fine-grained polycrystalline cBN are promising for applications in next-generation high-precision and high-efficiency cutting tools.
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16

Feng, Xiao Hui, Hong Min Jia, Tian Jiao Luo, Yun Teng Liu, Ji Xue Zhou, Yang De Li, Wei Rong Li, and Yuan Sheng Yang. "Microstructures and Mechanical Properties of Extruded High-Purity Magnesium." Materials Science Forum 816 (April 2015): 439–45. http://dx.doi.org/10.4028/www.scientific.net/msf.816.439.

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The microstructure and mechanical properties of the high-purity magnesium (99.99wt.% Mg) extruded by single direct extrusion experiment were investigated. For the extrusion speed of 0.2mm/s, the microstructure of extruded Mg rods was composed of equiaxed fine dynamical recrystallized (DRXed) grains and some elongated coarse un-DRXed grains. The yield strength (YS) and the elongation of the extruded bars were 105.3MPa and 46.7% respectively. In the case of extrusion speed of 4.0mm/s, the DRXed grains were remarkably coarsened and the elongated coarse un-DRXed grains vanished, meanwhile lots of twins occurred and the intensity of basal-plane texture increased a little. With the extrusion speed being raised from 0.2mm/s to 4.0mm/s, the YS and the elongation decreased to 60.5MPa and 22.1% respectively, but the ultimate tensile strength (UTS) was improved from 154.7MPa to 178.8MPa.
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17

Gao, Shaokang, Yuzhen Chen, Haiyan Luo, Lilong Jiang, Binghuo Ye, Mingdeng Wei, and Kemei Wei. "Single-Crystal Vanadium Pentoxide Nanowires." Journal of Nanoscience and Nanotechnology 8, no. 7 (July 1, 2008): 3500–3503. http://dx.doi.org/10.1166/jnn.2008.137.

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Single-crystal V2O5 nanowires were successfully synthesized from the starting materials V6O13 powder and water. The experimental results indicate that high purity nanowires can be obtained using this simple synthetic route in absence of templates or catalysts. The diameter of the nanowires was found to be ca. 20∼60 nm and the length up to several tens of micrometers, and the phases of nanowires were determined by XRD and TEM measurements.
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18

Aoki, Masato, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, and Francis J. DiSalvo. "GaN single crystal growth using high-purity Na as a flux." Journal of Crystal Growth 242, no. 1-2 (July 2002): 70–76. http://dx.doi.org/10.1016/s0022-0248(02)01349-0.

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19

Viscor, Petr, Ole Andersen, Thomas Clausen, Paul A. Ellsmore, Leif Jensen, and Jakob Schiotz. "EIS Characterization of Ultra High Purity, Float Zone Single Crystal Silicon." ECS Transactions 16, no. 6 (December 18, 2019): 331–42. http://dx.doi.org/10.1149/1.2980316.

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20

Nikitin, S. A., A. M. Tishin, S. F. Savchenkova, Yu I. Spichkin, O. D. Chistykov, S. V. Red'ko, and Yu A. Nesterov. "Magnetic part of specific heat in high-purity Dy single crystal." Journal of Magnetism and Magnetic Materials 96, no. 1-3 (June 1991): 26–28. http://dx.doi.org/10.1016/0304-8853(91)90606-b.

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21

Bulanov, A. D., G. G. Devyatych, A. V. Gusev, P. G. Sennikov, H. J. Pohl, H. Riemann, H. Schilling, and P. Becker. "ChemInform Abstract: The Highly Isotopic Enriched (99.9%), High-Purity 28Si Single Crystal." ChemInform 32, no. 6 (February 6, 2001): no. http://dx.doi.org/10.1002/chin.200106015.

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22

McKenna, T. J., S. J. Campbell, D. H. Chaplin, and G. V. H. Wilson. "Temperature modulation of the antiferromagnetic susceptibility of high purity single-crystal terbium." Journal of Physics: Condensed Matter 3, no. 12 (March 25, 1991): 1855–69. http://dx.doi.org/10.1088/0953-8984/3/12/016.

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23

Lee, Chul-Yong, Chae-Min Ban, Han-Rim Lee, Kee-Nam Choo, and Byung-Hyuk Jun. "Thermal and fast neutron detection through high-purity single-crystal CVD diamonds." Applied Radiation and Isotopes 152 (October 2019): 25–29. http://dx.doi.org/10.1016/j.apradiso.2019.06.025.

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24

YAMADA, K., and N. MIURA. "OPTICAL BANDGAP OF HIGH PURITY SINGLE CRYSTAL EuSe IN HIGH MAGNETIC FIELD UP TO 30T." Journal of the Magnetics Society of Japan 11, S_1_ISMO (1987): S1_137–140. http://dx.doi.org/10.3379/jmsjmag.11.s1_137.

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25

Su, C. M., and T. S. Kê. "Further Experiments on the High-Temperature Internal Friction Peak in High-Purity Single Crystal Aluminium." physica status solidi (a) 94, no. 1 (March 16, 1986): 191–202. http://dx.doi.org/10.1002/pssa.2210940122.

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26

Lee, Chae Young, Jeong Min Choi, Dae Sung Kim, Mi Seon Park, Yeon Suk Jang, Won Jae Lee, In Seok Yang, Tae Hee Kim, Xiu Fang Chen, and Xian Gang Xu. "Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method." Materials Science Forum 963 (July 2019): 30–33. http://dx.doi.org/10.4028/www.scientific.net/msf.963.30.

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Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadium doped semi-insulated SiC single crystals has been investigated. The quality of SiC crystal grown using SiC source powder with higher purity was definitely better than SiC crystal with lower purity. SiC crystals having an average resistivity value of about 1×1010 Ωcm were successfully obtained. In the result of COREMA measurement, the use of high purity SiC powder was revealed to obtain wafers with better uniformity in resistivity value.
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27

Zhukov, A. A., Yu Bugoslavsky, G. K. Perkins, J. V. Thomas, A. D. Caplin, H. Küpfer, and T. Wolf. "Vector magnetization studies of high purity YBa2Cu3Oy single crystal near the ab-plane." Physica C: Superconductivity and its Applications 282-287 (August 1997): 2151–52. http://dx.doi.org/10.1016/s0921-4534(97)01194-5.

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28

Devyatykh, G. G., A. D. Bulanov, A. V. Gusev, I. D. Kovalev, V. A. Krylov, A. M. Potapov, P. G. Sennikov, et al. "High-purity single-crystal monoisotopic silicon-28 for precise determination of Avogadro’s number." Doklady Chemistry 421, no. 1 (July 2008): 157–60. http://dx.doi.org/10.1134/s001250080807001x.

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29

Otani, Shigeki, Takaho Tanaka, and Yoshio Ishizawa. "Growth conditions of high purity TiC single crystal using the floating zone method." Journal of Crystal Growth 92, no. 1-2 (October 1988): 8–12. http://dx.doi.org/10.1016/0022-0248(88)90425-3.

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30

Isberg, Jan, Adam Lindblom, Antonella Tajani, and Daniel Twitchen. "Temperature dependence of hole drift mobility in high-purity single-crystal CVD diamond." physica status solidi (a) 202, no. 11 (September 2005): 2194–98. http://dx.doi.org/10.1002/pssa.200561915.

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31

Ganta, Deepak, Ganesh Venugopal, Andrew T. Hunt, and Michael Sapp. "High-Purity Nanopowders for Laser Applications." ISRN Nanotechnology 2012 (May 16, 2012): 1–6. http://dx.doi.org/10.5402/2012/608756.

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We have successfully developed high-quality laser-grade yttrium aluminum garnet (YAG), and lutetium oxide (Lu2O3), using a novel combustion chemical vapor condensation (CCVC) technique based on a proprietary NanoSpray Combustion process. The purity of the nanopowders was >99%. Nanopowders with different dopants have been synthesized over a 10–200 nm size range, with low-cost, high-purity precursors that are viable for large-scale production. Great strides have also been made in developing highly dense (>99% theoretical density) polycrystalline Nd-doped YAG pellets using vacuum sintering and hot isostatic pressing (HIP). This method is an alternative to the Czochralski method for making single-crystal ceramic bodies, which has several disadvantages including high cost, size, shape restrictions, and limitations in Nd concentrations (∼1 at %). Nanomaterials also enable higher percentages of Nd to be incorporated into the YAG lattice which improves laser efficiency and >85% near IR transmission, thereby reducing scattering losses associated with larger grain-size polycrystalline materials.
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32

Gutić, Sanjin J., Ana S. Dobrota, Edvin Fako, Natalia V. Skorodumova, Núria López, and Igor A. Pašti. "Hydrogen Evolution Reaction-From Single Crystal to Single Atom Catalysts." Catalysts 10, no. 3 (March 4, 2020): 290. http://dx.doi.org/10.3390/catal10030290.

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Hydrogen evolution reaction (HER) is one of the most important reactions in electrochemistry. This is not only because it is the simplest way to produce high purity hydrogen and the fact that it is the side reaction in many other technologies. HER actually shaped current electrochemistry because it was in focus of active research for so many years (and it still is). The number of catalysts investigated for HER is immense, and it is not possible to overview them all. In fact, it seems that the complexity of the field overcomes the complexity of HER. The aim of this review is to point out some of the latest developments in HER catalysis, current directions and some of the missing links between a single crystal, nanosized supported catalysts and recently emerging, single-atom catalysts for HER.
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33

Furukimi, Osamu, Chatcharit Kiattisaksri, Yuji Takeda, Masatoshi Aramaki, Satoshi Oue, Shinji Munetoh, and Masaki Tanaka. "Void nucleation behavior of single-crystal high-purity iron specimens subjected to tensile deformation." Materials Science and Engineering: A 701 (July 2017): 221–25. http://dx.doi.org/10.1016/j.msea.2017.06.084.

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34

Rhyee, Jong-Soo, J. Y. Kim, and B. K. Cho. "Multiple magnetic transitions and magnon gaplike characteristics in the high purity TbB4 single crystal." Journal of Applied Physics 101, no. 9 (May 2007): 09D509. http://dx.doi.org/10.1063/1.2710229.

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35

Smirnov, V. P., and D. S. Kiselev. "Preparation of high-purity single-crystal W and W〈Nb〉 via chemical vapor transport." Inorganic Materials 48, no. 11 (October 9, 2012): 1093–95. http://dx.doi.org/10.1134/s0020168512110131.

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36

Yu Chen-Hui, Zhang Bo, Yu Li-Bo, Li Ya-Jun, Lu Wei, and Shen Xue-Chu. "Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy." Acta Physica Sinica 57, no. 2 (2008): 1102. http://dx.doi.org/10.7498/aps.57.1102.

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37

Shin, Dong Geun, Hae Rok Son, Sun Heo, Byung Sook Kim, Jung Eun Han, Kyung Suk Min, and Dong Hwa Lee. "Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth." Materials Science Forum 778-780 (February 2014): 22–25. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.22.

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Two kinds of SiC powder having a different impurity contents and particle size were prepared by carbothermal reduction under different conditions from traditional process for controlling the purity of product. SiC single crystal was grown in the RF heating PVT machine at the temperature above 2,100 °C. After crystal growth, boule was cut to wafers in 1mm thickness and fine polished using diamond abrasive slurry. The impurity in the powder and wafer was analyzed using glow discharged mass spectroscopy (GDMS). Major impurities in the SiC wafer were aluminum, boron, iron and titanium which were accorded in the SiC powder and these impurities were decreasing in proportional to those in the powder. However, behavior of each elemental impurity was different from each other during the crystal growth. In case of boron was increased after crystal growth while aluminum decreased. In case of titanium and boron were higher in the wafer than in the powder. It can be explained to other impurity source such as graphite crucible and insulation felt.
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38

Tong, Jiang Feng, and Da Ming Chen. "A Novel Way to Synthesis Magnesium Aluminate Spinel Powders by Polymer Gel Reaction." Key Engineering Materials 512-515 (June 2012): 600–603. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.600.

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In this paper, a fine pure Magnesium aluminate spinel powder was synesised by Gel solid reaction,using Al(NO3)36H2O and Mg(NO3)26H2O as raw materials under given condition. The precursor was formed by polymer gelling.The phase changed according to heating temperatures from 700°C to 900°C.The single phase of Magnesium aluminate spinel was obtained by calcining the precursor at temperatures higher than 900°C. The phase changing process and relationship among calcination parameters, phase composition and image of particle are studied to determine the optimal conditions for the synthesis of fine Magnesium aluminate spinel powder. The powder obtained was characterized by XRD,TEM etc. The results of analysis showed that the ultrafine powder is of spinel phase, high purity, good dispersion.This process for preparing fine Magnesium aluminate spinel powder was very simple and inexpensive.The results of analysis showed that the ultrafine powder was of mullite phase, high purity, good dispersion, and the particle were homogeneous.
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39

Itoh, Kohei, W. L. Hansen, E. E. Haller, J. W. Farmer, V. I. Ozhogin, A. Rudnev, and A. Tikhomirov. "High purity isotopically enriched 70Ge and 74Ge single crystals: Isotope separation, growth, and properties." Journal of Materials Research 8, no. 6 (June 1993): 1341–47. http://dx.doi.org/10.1557/jmr.1993.1341.

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70Ge and 74Ge isotopes were successfully separated from natural Ge and zone purified. Several highly enriched, high purity 70Ge and 74Ge single crystals were grown by the vertical Bridgman method. The growth system was designed for reliable growth of low dislocation density, high purity Ge single crystals of very small weight (∼4 g). A 70Ge and a 74Ge crystal were selected for complete characterization. In spite of the large surface to volume ratio of these ingots, both 70Ge and 74Ge crystals contain low electrically active chemical net-impurity concentrations of ∼2 × 1012 cm−3, which is two orders of magnitude better than that of 74Ge crystals previously grown by two different groups.1,2 Isotopic enrichment of the 70Ge and the 74Ge crystals is 96.3% and 96.8%, respectively. The residual donors and acceptors present in both crystals were identified as phosphorus and copper, respectively. In addition, less than 1011 cm−3 gallium, aluminum, and indium were found in the 70Ge crystal.
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40

Oya, Gin-ichiro, Tetsuro Komukai, and Yasuji Sawada. "The effect of epitaxy on the upper critical fields of evaporated niobium films." Journal of Materials Research 4, no. 2 (April 1989): 283–87. http://dx.doi.org/10.1557/jmr.1989.0283.

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Two upper critical fields normal (Bc2⊥) and parallel (Bc2∥) to the surfaces of both single-crystal and polycrystalline Nb films are studied at 4.2 K in relation to the purity and morphology of the films, in order to make properties of the single-crystal films clear. High-quality single-crystal Nb films (with transition temperature Tc of ∼9.3 K and normal resistivity ρn of ∼0.2 μΩ · cm) are found to have magnetic properties characterized by Bc2⊥ of 0.31 T as low as Bc2 (bulk upper critical field) of bulk Nb, and Bc2∥/Bc2⊥ of ∼1.85 as high as Bc3/Bc2 (where Bc3 is the surface nucleation critical field) of pure Nb. These properties depend strongly on high purity and surface smoothness of the films, which is naturally accompanied by superconductivity. Polycrystalline Nb films have higher Bc2⊥ and lower Bc2∥/Bc2⊥, which result from a decrease in purity of the films and a presence of normal-conducting niobium-suboxide layers at the surfaces of the films, and thereby a decrease of the surface effect in the films.
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41

Zahedi, Abolfazl, Murat Demiral, Anish Roy, Vladimir I. Babitsky, and Vadim V. Silberschmidt. "Indentation in F.C.C. Single Crystals." Solid State Phenomena 188 (May 2012): 219–25. http://dx.doi.org/10.4028/www.scientific.net/ssp.188.219.

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A three-dimensional crystal-plasticity finite element model of nano-indentation is developed in this paper to analyze deformation of a face-centred cubic (f.c.c.) high-purity single crystal of copper. This model was implemented as a user-defined subroutine in the commercial finite element software ABAQUS/Standard and used to study cases with different crystallographic orientations of the single crystal. The effects of various factors – crystallographic orientation of the indented material, an indenter angle and contact conditions between the indenter and workpiece material – on the load-displacement characteristics are studied. The obtained results show an anisotropic nature of surface topography around the obtained indents.
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42

Bi, Xiao Guo, Xu Dong Liu, and Wei Niu. "Flame-Fusion Growth of Rutile Single Crystal." Advanced Materials Research 535-537 (June 2012): 2571–76. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.2571.

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Single crystal of Rutile has been grown successfully by the flame fusion method by using high purity (4N5) ultrafine titania powder as starting material. The effects of growth atmosphere, growth rate and temperature gradient in the chamber on crystal growing were investigated and the specific growth conditions have been defined. The annealing of the as-grown crystals was performed in the oxygen and in the air respectively. It was shown that growth atmosphere where the oxygen partial pressure is higher than that of the oxygen decomposing pressure at the liquid-solid interface is a necessary condition for growing perfect crystals. In addition to reducing thermal stresses, the more important role of annealing is to eliminate oxygen vacancies by oxidization reaction. The annealing time can be considerably shortened in an oxygen atmosphere as compared to in the air and the grown crystal has more perfect structure.
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43

Dong, Jinfang, Qing Dong, Yongbing Dai, Hui Xing, Yanfeng Han, Jianbo Ma, Jiao Zhang, Jun Wang, and Baode Sun. "Microstructure Evolution in High Purity Aluminum Single Crystal Processed by Equal Channel Angular Pressing (ECAP)." Materials 10, no. 1 (January 22, 2017): 87. http://dx.doi.org/10.3390/ma10010087.

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Choi, Yong Seok, Kyung Il Kim, Kyu Hwan Oh, Heung Nam Han, Suk Hoon Kang, Jinsung Jang, and Jun Hyun Han. "Dynamic recrystallization in high-purity aluminum single crystal under frictionless deformation mode at room temperature." Journal of Materials Research 28, no. 20 (October 11, 2013): 2829–34. http://dx.doi.org/10.1557/jmr.2013.265.

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Takano, Shunsuke, Eiji Kita, Kiiti Siratori, Kay Kohn, Shigeyuki Kimura, and Akira Tasaki. "The Second Order Magnetoelectric Effect in a High Purity YIG (Yttrium Iron Garnet) Single Crystal." Journal of the Physical Society of Japan 60, no. 1 (January 15, 1991): 288–93. http://dx.doi.org/10.1143/jpsj.60.288.

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Cui, Liang, Cheng Guo, and Xiaoying Li. "Photonic crystal fibre-based source of heralded single photons with high mode purity and efficiency." Journal of Modern Optics 60, no. 19 (November 2013): 1593–97. http://dx.doi.org/10.1080/09500340.2013.844865.

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Weil, Matthias. "The high-temperature modification of magnesium sulfate (β-MgSO4) from single-crystal data." Acta Crystallographica Section E Structure Reports Online 63, no. 8 (July 27, 2007): i172. http://dx.doi.org/10.1107/s1600536807036355.

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Khasgiwale, Niranjan, and Helen M. Chan. "High-Temperature Indentation Studies on the {110} Plane of Single-crystal Magnesium Oxide." Journal of the American Ceramic Society 75, no. 7 (July 1992): 1924–28. http://dx.doi.org/10.1111/j.1151-2916.1992.tb07218.x.

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Dhar, Romit, Russell Tjossem, and Kelvin G. Lynn. "High-pressure vertical Bridgman growth of lead magnesium niobate–lead titanate single crystal." Journal of Crystal Growth 312, no. 7 (March 2010): 971–77. http://dx.doi.org/10.1016/j.jcrysgro.2009.12.067.

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Zhang, Guodong, Nian Liu, Zhengyuan Ren, and Bing Yang. "Synthesis of High-Purity SnO2Nanobelts by Using Exothermic Reaction." Journal of Nanomaterials 2011 (2011): 1–5. http://dx.doi.org/10.1155/2011/526094.

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Abstract:
This paper presents a new method to synthesize high-purity single-crystalline SnO2nanobelts with rutile structure. The purity, morphology, crystal structure, and sizes of the as-grown SnO2nanobelts are characterized by X-ray diffraction, energy-dispersive X-ray analysis, scanning electron microscopy, transmission electron microscopy, and Raman-scattering spectroscopy. The scanning electron microscopy and transmission electron microscopy reveal tetragonal SnO2nanobelts of 50–120 nm in width, 20–50 nm in thickness, and 2–10 μm in length. The three observed Raman peaks at 475, 633, and 774 cm−1indicate the typical rutile structure of the SnO2, which is in agreement with the X-ray diffraction results, and other peaks of impurity are not found. High-resolution transmission electron microscopy demonstrates that the nanobelts have a high degree of crystallinity, without typical imperfects in it. And the growth mechanism of the SnO2nanobelts is discussed.
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