Journal articles: 'High quality inductor'

1

Padavala, Akhendra Kumar, Narayana Kiran Akondi, and Bheema Rao Nistala. "High quality factor fractal inductor with complementary split-ring array inclusion." Circuit World 46, no. 3 (2020): 215–19. http://dx.doi.org/10.1108/cw-06-2019-0052.

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Purpose This paper aims to present an efficient method to improve quality factor of printed fractal inductors based on electromagnetic band-gap (EBG) surface. Design/methodology/approach Hilbert fractal inductor is designed and simulated using high-frequency structural simulator. To improve the quality factor, an EBG surface underneath the inductor is incorporated without any degradation in inductance value. Findings The proposed inductor and Q factor are measured based on well-known three-dimensional simulator, and the results are compared experimentally. Practical implications The proposed method was able to significantly decrease the noise with increase in the speed of radio frequency and sensor-integrated circuit design. Originality/value Fractal inductor is designed and simulated with and without EBG surfaces. The measurement of printed circuit board prototypes demonstrates that the inclusion of split-ring array as EBG surface increases the quality factor by 90 per cent over standard fractal inductor of the same dimensions with a small degradation in inductance value and is capable of operating up to 2.4 GHz frequency range.

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BARTOLI, M., N. NOFERI, A. REATTI, and M. K. KAZIMIERCZUK. "MODELLING WINDING LOSSES IN HIGH-FREQUENCY POWER INDUCTORS." Journal of Circuits, Systems and Computers 05, no. 04 (1995): 607–26. http://dx.doi.org/10.1142/s0218126695000370.

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A high-frequency model of iron-powder-core inductors is studied. The skin and proximity effects that cause the winding parasitic resistance to increase with the operating frequency are considered. The inductor self-resonance due to the parasitic capacitances is taken into account as well. The frequency response of the inductor model is compared to that of an experimentally tested iron-powder-core inductor. Expressions giving the ac resistance as a function of the operating frequency are given. These expressions allow for an accurate prediction of the inductor power loss over a wide frequency range. The measured and calculated values of the inductor impedance magnitude and phase, the real and imaginary parts of the inductor impedance, the inductance, and the inductor quality factor are plotted versus frequency and compared. Theoretical results were in good agreement with those experimentally measured. A design procedure for solid wire winding inductors based on the results of the inductor modelling is also given in the paper.

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Lee, Changjo, and Seonghearn Lee. "Frequency-Dependent Quality Factor Modeling of High Resistivity SOI RF CMOS Inductor." Journal of the Institute of Electronics and Information Engineers 54, no. 9 (2017): 31–37. http://dx.doi.org/10.5573/ieie.2017.54.9.31.

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Lee, Jae-Jin, Yang-Ki Hong, Seok Bae, et al. "High-Quality Factor Ni-Zn Ferrite Planar Inductor." IEEE Transactions on Magnetics 46, no. 6 (2010): 2417–20. http://dx.doi.org/10.1109/tmag.2010.2044377.

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Tumma, Sunil Kumar, and Bheema Rao Nistala. "A novel hybrid series stacked differential fractal inductor for MMIC applications." Circuit World 46, no. 2 (2019): 137–45. http://dx.doi.org/10.1108/cw-06-2019-0058.

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Purpose The purpose of this paper is to design an on-chip inductor with high inductance, high-quality factor and high self-resonance frequency for the equivalent on-chip area using fractal curves. Design/methodology/approach A novel hybrid series stacked differential fractal inductor using Hilbert and Sierpinski fractal curves is proposed with two different layers connected in series using vias. The inductor is implemented in Sonnet EM simulator using 180 nm CMOS standard process technology. Findings The proposed inductor reduces the parasitic capacitance and negative mutual inductance between the adjacent layers with significant improvement in overall inductance, quality factor and self-resonance frequency when compared with conventional series stacked fractal inductors. Research limitations/implications The fractal inductor is used to create high inductance in the single-layer process, but access to multilayers is restricted owing to unusual and expensive fabrication processes. Practical implications The proposed inductor can be used in implementation of low noise amplifier, voltage controlled oscillators and power amplifiers. Originality/value This paper introduces a combination of two fractal curves to implement a hybrid fractal inductor that enhances the performance of the inductor.

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Lee, Yonggoo, and Bomson Lee. "Digitally-Controlled Bondwire Inductor with High Quality Factor and Wide Tuning Range." Journal of Electromagnetic Engineering and Science 20, no. 3 (2020): 207–12. http://dx.doi.org/10.26866/jees.2020.20.3.207.

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A tunable bondwire inductor (TBI) with high-quality factor and wide tuning range is presented. The proposed TBI is fabricated on a single chip by combining a single-pole four-throw (SP4T) switch integrated circuit (IC) and four bondwire inductors on a package substrate. The SP4T switch IC is fabricated using 180 nm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The fabricated TBI chip exhibits a 521% tuning range of inductance from 1.77 to 11 nH at 0.1 GHz and a relatively high-quality factor. To the knowledge of the authors, the results of this work demonstrate the best combined performance of inductance tuning range and quality factor.

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Pirouznia, Parsa, and Bahram Azizollah Ganji. "ANALYTICAL OPTIMIZATION OF HIGH PERFORMANCE AND HIGH QUALITY FACTOR MEMS SPIRAL INDUCTOR." Progress In Electromagnetics Research M 34 (2014): 171–79. http://dx.doi.org/10.2528/pierm13121908.

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Jong-Min Yook, Ju-Hyun Ko, Man-Lyun Ha, and Young-Se Kwon. "High-quality solenoid inductor using dielectric film for multichip modules." IEEE Transactions on Microwave Theory and Techniques 53, no. 6 (2005): 2230–34. http://dx.doi.org/10.1109/tmtt.2005.848775.

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Lopez-Lopez, Jaime, Cristina Fernandez, Andrés Barrado, and Pablo Zumel. "Comparison of Different Large Signal Measurement Setups for High Frequency Inductors." Electronics 10, no. 6 (2021): 691. http://dx.doi.org/10.3390/electronics10060691.

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The growing interest of miniaturized power converters has pushed the development of high frequency inductors integrated in Power Supply on Chip or Power Supply in Package. The proper characterization of inductor impedance is a challenge due to the dependence of the impedance on the current, the high quality factor (Q) and the high frequency range where these devices operate. In this paper, we present a comparison of different measuring methods to characterize high frequency and high Q inductors. The comparison is based on a systematic analysis of the measurement process, quantifying the influence of the parameters that affect the measurement result. Four common measurement setups are analyzed and compared. To validate the calculations, the resistance of a high frequency, high-Q inductor is characterized using every presented setup. The good match between calculations, simulation and measurement validates the analysis and the conclusions extracted.

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Mohamad Razy, Ahmad Hafiz, Mohd Tafir Mustaffa, Asrulnizam Abd Manaf, and Norlaili Mohd Noh. "A Tunable Ferrofluid-based Polydimethylsiloxane (PDMS) Microchannel Inductor for Ultra High Frequency Applications." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 2 (2017): 926. http://dx.doi.org/10.11591/ijece.v7i2.pp926-932.

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In this work, a tunable ferrofluid-based polydimethylsiloxane (PDMS) microchannel inductor with high quality factor and high tuning range is proposed. For this project, PDMS is used to create a microchannel with a width and height of 0.53 mm and 0.2 mm respectively. The microchannel is then used to cover the whole design of a solenoid inductor. A solenoid inductor is designed using wire bonding technique where lines of copper and bond wires are used to form a solenoid winding on top of silicon substrate. A light hydrocarbon based ferrofluid EMG 901 660 mT with high permeability of 5.4 is used. The ferrofluid-based liquid is injected into the channel to enhance the performance of a quality factor. A 3D full-wave electromagnetic fields tool, ANSYS HFSS is used in this work to simulate the solenoid inductor. The results obtained in this work gives a quality factor of more than 10 at a frequency range of 300 MHz to 3.3 GHz (Ultra High Frequency range). The highest quality factor is 37 which occurs at a frequency of 1.5 GHz, provides a high tuning range of 112%.

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STORNELLI, V., L. PANTOLI, and G. LEUZZI. "HIGH QUALITY FACTOR L-BAND ACTIVE INDUCTOR-BASED BAND-PASS FILTERS." Journal of Circuits, Systems and Computers 22, no. 03 (2013): 1350014. http://dx.doi.org/10.1142/s021812661350014x.

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In this letter, a tunable high-Q active inductor with high dynamic range is presented. The equivalent inductance and resistance values can be tunable in a wide frequency range by changing the compensating network components values; outside the operating frequency band, the equivalent resistance increases, improving signal rejection for band-pass filter applications. A second-order active band-pass filter with a central frequency of 2100 MHz using the high-Q active inductance has been fabricated and tested.

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Kenari, Shirin Azadi, Bahram Azizollah Ganji, and Samaneh Soleimani-Amiri. "Design and analysis of a high quality factor multipath spiral inductor." Microsystem Technologies 25, no. 8 (2018): 3213–18. http://dx.doi.org/10.1007/s00542-018-4176-8.

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Torfian Hoveizavi, Fatemeh Bani, Nuha Abdul Rhaffor, Sofiyah Sal Hamid, et al. "Fabrication and Characterization of Ferrofluidic-Based Wire-Wound and Wire-Bonded Type Inductor for Continuous RF Tunable Inductor." Applied Sciences 10, no. 11 (2020): 3776. http://dx.doi.org/10.3390/app10113776.

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This paper reports on the novel implementation of a tunable solenoid inductor using the fluid-based inductance varying technique. The concept utilized material permeability variation that directly modifies self-induced magnetic flow density inside the coil, which in turn creates a variation of the inductance value. The core is formed by a channel which allows the circulation of a liquid through it. The liquid proposed for this technique has ferromagnetic behavior, called ferrofluid, with a magnetic permeability higher than unity. To evaluate the proposed technique, two different types of solenoid inductor were designed, simulated and measured. The two structures are wire-wound and wire bond solenoid inductors. The structures are simulated in a 3D EM analysis tool followed by fabrication, test and measurement. The wire-bonded-based inductor showed a quality factor of 12.7 at 310 MHz, with 81% tuning ratio, by using ferrofluid EMG 901. The wire-wound-based inductor showed that the maximum tuning ratio is 90.6% with quality factor 31.3 at 300 MHz for ferro fluidic EMG 901. The maximum measured tuning ranges were equal to 83.5% and 56.2% for the wire-wound type and the wire-bonded one, respectively. The measurement results for the proposed technique showed a very high tuning range, as well as high quality factor and continuous tunability.

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Lu, Chong Ying, Jian Hua Li, Li Xin Xu, and Zhi Gang Wang. "RF Performances of MEMS Suspended Inductor under High Overload Environments." Key Engineering Materials 609-610 (April 2014): 1503–7. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.1503.

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The radio frequency (RF) performances of MEMS suspended spiral inductor under high overload environments are studied. Firstly, a suspended spiral inductor and its MEMS surface micromachining process which is compatible with CMOS process are developed. Then, the mechanical responses and RF performances of the inductor are simulated by ANSYS and HFSS, respectively. The simulation results show that, as the overload increases, the inductance and quality factor decrease significantly when the frequency band is closed to the resonant frequency but have no significant change when the frequency band is much lower than resonant frequency; the resonant frequency of the suspended inductor decreases monotonically with the increase of overload. A modified lumped parameter model is utilized to illustrate the simulation results, which theoretically indicates that the substrate loss is more severe than the ohmic loss as the overload increases.

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LIANG, K. H. "CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor." IEICE Transactions on Electronics E88-C, no. 12 (2005): 2372–76. http://dx.doi.org/10.1093/ietele/e88-c.12.2372.

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Azizollah Ganji, Bahram, and Sanaz Kheiry. "Design and analysis of a novel MEMS spiral inductor with high quality factor." Microsystem Technologies 24, no. 8 (2018): 3321–28. http://dx.doi.org/10.1007/s00542-018-3914-2.

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17

Büyüktas, Kevni, Klaus Koller, Karl-Heinz Müller, and Angelika Geiselbrechtinger. "A New Process for On-Chip Inductors with High Q-Factor Performance." International Journal of Microwave Science and Technology 2010 (October 5, 2010): 1–9. http://dx.doi.org/10.1155/2010/517187.

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A novel technological method to improve the quality factor (Q) of RF-integrated inductors for wireless applications is presented in this paper. A serious reduction of substrate losses caused by capacitive coupling is provided. This is realised by removing the oxide layers below the coils with optimized underetching techniques. This special etching procedure is used to establish an environment in the inductor substructure with very low permittivity. A set of solid oxide-metal-columns placed below the metal windings stabilize the coil and prevent the hollowed out structure from mechanical collapse. The oxide capacitance is lowered significantly by the reduction of the permittivity from values around 4 to nearly 1. Capacitive coupling losses into substrate are decreasing in the same ratio. The resulting maximum Q-factors of the new designs are up to 100% higher compared to the same devices including the oxide layers but shifted significantly to higher frequencies. Improvements of Q from 10 up to 15 have been obtained at a frequency of 3 GHz for a 2.2 nH inductor with an outer diameter of 213 m. The resonance frequency () and frequency at maximum Q () are shifted to higher frequencies, caused by the shrunk total capacitance of the structure. This enables the circuit designer to use the inductors for applications working at higher frequencies. Coils with different layouts and values for inductance (L) were verified and showed similar results.

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Patel, Dhara P., and Shruti Oza-Rahurkar. "CMOS Active Inductor/Resonator Based Voltage Controlled Oscillator." Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering) 12, no. 6 (2019): 500–506. http://dx.doi.org/10.2174/2352096511666181105111852.

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Background: A tunable CMOS active inductor/resonator based Voltage Controlled Oscillator (VCO) has been presented. In the design of LC-VCO, LC resonator (tank) circuit has been substituted with gyrator based CMOS active inductor/resonator. The purity of VCO output signal is defined by the phase noise parameter. Methods: For good spectral purity of VCO output signal, the phase noise should be minimum. Moreover, the quality factor of LC resonator is inversely proportional to the phase noise of VCO output signal. In the presented work, a high-quality active inductor/resonator circuit has been used to design VCO which minimizes the phase noise and chip area as well. Further, other VCO characterization factors are measured. Results: The designed circuit has been implemented in 0.18µm CMOS technology. Conclusion: The design of the proposed AI based voltage controlled oscillator shows better phase noise, less chip area and high output power. The high output power is achieved at the cost of limited tuning range of 1.14 GHz ~ 2.1 GHz. The presented active inductor based voltage controlled oscillator can be used for RF applications from 1.14GHz ~ 2.1GHz.

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Khalid, N., N. I. M. Nor, W. M. W. Norhaimi, Zaliman Sauli, and Vithyacharan Retnasamy. "Design and Analysis on Symmetric MEMS Inductor." Applied Mechanics and Materials 815 (November 2015): 364–68. http://dx.doi.org/10.4028/www.scientific.net/amm.815.364.

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This paper presents the design and analysis of new proposed topology micro-electro-mechanical system (MEMS) inductor. This new symmetric MEMS inductor is designed to reduce the total length of the conductor strip and hence reduce the resistance of the metal tracks. This results significant increases in the quality (Q) factor of the inductor. In this paper, the MEMS inductor is designed using CoventorWare®, which is powerful software for MEMS computer aided design (CAD), modeling and simulation. Results indicate that new symmetric inductor topology has thehighest Q-factor and it hasbeenimproved bytwo times compared to circular inductor. The analysis revealed that area of the symmetric inductor has reduced by37.5% compared to the circular inductor. Result has proved that the reduction of length of the conductor strip has reduced the resistance of the metal tracks and results in a high Q-factor inductor.

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Parveen, T., and M. T. Ahmed. "Simulation of ideal grounded tunable inductor and its application in high quality multifunctional filter." Microelectronics International 23, no. 3 (2006): 9–13. http://dx.doi.org/10.1108/13565360610680703.

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Xu, Lei, Lai Sen Wang, Xiao Long Liu, et al. "Integrated Solenoid Inductor with [FeCoSiN/SiN_x]₁₈ Multilayer Magnetic Film for GHz Applications." Materials Science Forum 833 (November 2015): 85–89. http://dx.doi.org/10.4028/www.scientific.net/msf.833.85.

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In this work, we explored the solenoid inductor integrated [FeCoSiN/SiNx]18 multilayer magnetic film as magnetic core used in GHz range. The multilayer magnetic film was employed due to its high resistivity and excellent soft magnetic properties even in GHz range. It was found that this magnetic core material can dramatically increase the performance of the solenoid inductor, which presenting a 10-fold improvement in the inductance and a 23-fold enhancement in the quality factor at 1.67 GHz in comparison to those of the air core solenoid inductor. Besides, an inductance density of 27 nH/mm2 and a self-resonant frequency of 3 GHz were also achieved. The results indicated that the solenoid inductor with multilayer magnetic core showed good high frequency characteristics.

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Cai, Hua-Lin, Jing Zhan, Chen Yang, et al. "Application of Ferrite Nanomaterial in RF On-Chip Inductors." Journal of Nanomaterials 2013 (2013): 1–12. http://dx.doi.org/10.1155/2013/832401.

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Several kinds of ferrite-integrated on-chip inductors are presented. Ferrite nanomaterial applied in RF on-chip inductors is prepared and analyzed to show the properties of high permeability, high ferromagnetic resonance frequency, high resistivity, and low loss, which has the potential that will improve the performance of RF on-chip inductors. Simulations of different coil and ferrite nanomaterial parameters, inductor structures, and surrounding structures are also conducted to achieve the trend of gains of inductance and quality factor of on-chip inductors. By integrating the prepared ferrite magnetic nanomaterial to the on-chip inductors with different structures, the measurement performances show an obvious improvement even in GHz frequency range. In addition, the studies of CMOS compatible process to integrate the nanomaterial promote the widespread application of magnetic nanomaterial in RF on-chip inductors.

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Marinis, Thomas F., and Joseph W. Soucy. "Implementing Inductor Function with Vibrating Capacitor Structures." Journal of Microelectronics and Electronic Packaging 11, no. 2 (2014): 57–63. http://dx.doi.org/10.4071/imaps.409.

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One of the most common uses of inductors is in filtering electrical signals to remove oscillations over selected frequency ranges. In this application, they are combined with capacitors to build resonant circuits to either block or dissipate signals at the unwanted frequencies. Similar, but larger current capacity filters are used to eliminate oscillatory ripple voltages from DC power supply outputs. Inductors are also essential components in buck converter type power supplies in which they store energy supplied by an oscillatory source to power a circuit, which generates a constant voltage. Inductors of various constructions have proven highly successful in all of these applications, but their performance is not ideal. For one, they dissipate the energy that is stored in them via a number of mechanisms. The conductivity of the wire comprising their windings is finite, so they suffer Ohmic losses. Their magnetic fields induce eddy currents within their cores and dissipative currents in surrounding circuit elements. Inductors also exhibit parasitic capacitance between their windings, which can give rise to dielectric losses. Because of these loss mechanisms, the quality factor of an inductor, which is its time average ratio of stored to dissipated energy, is typically less than a few hundred. By contrast, mechanical resonators, fabricated from single crystal silicon, attain quality factors that are orders of magnitude higher. Hence, mechanical filters could be made with sharper roll offs and smaller bandwidths than inductor based filters. They would also be more efficient in power supply applications. Inductors are also relatively heavy components, when compared with capacitors, resistors, and integrated circuits, due to their high content of copper and iron. A mechanical oscillator could be made significantly lighter than an inductor that is capable of storing the same amount of energy. We have been investigating mechanical oscillators that use flat beams, suspended at both ends above substrates with electrode patterns that form a capacitive dive to excite oscillations in the beam. We are examining a number of configuration variables, including beam geometry, mass distribution and excitation loading. We use finite element analysis and lumped parameter models to characterize beam deflection and MatLab scripts to predict performance in electrical circuits. We are also preparing to fabricate our first design for testing.

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Marinis, Thomas F., and Joseph W. Soucy. "Implementing Inductor Function with Vibrating Capacitor Structures." International Symposium on Microelectronics 2013, no. 1 (2013): 000354–60. http://dx.doi.org/10.4071/isom-2013-tp53.

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One of the most common uses of inductors is in filtering electrical signals to remove oscillations over selected frequency ranges. In this application, they are combined with capacitors to build resonant circuits to either block or dissipate signals at the unwanted frequencies. Similar, but larger current capacity filters are used to eliminate oscillatory ripple voltages from DC power supply outputs. Inductors are also essential components in buck converter type power supplies in which they store energy supplied by an oscillatory source to power a circuit, which generates a constant voltage. Inductors of various constructions have proven highly successful in all of these applications, but their performance is not ideal. For one, they dissipate the energy that is stored in them via a number of mechanisms. The conductivity of the wire comprising their windings is finite, so they suffer Ohmic losses. Their magnetic fields induce eddy currents within their cores and dissipative currents in surrounding circuit elements. Inductors also exhibit parasitic capacitance between their windings, which can give rise to dielectric losses. Because of these loss mechanisms, the quality factor of an inductor, which is its time average ratio of stored to dissipated energy, is typically less than a few hundred. By contrast, mechanical resonators, fabricated from single crystal silicon, attain quality factors that are orders of magnitude higher. Hence, mechanical filters could be made with sharper roll offs and smaller bandwidths than inductor based filters. They would also be more efficient in power supply applications. Inductors are also relatively heavy components, when compared to capacitors, resistors and integrated circuits, due to their high content of copper and iron. A mechanical oscillator could be made significantly lighter than an inductor that is capable of storing the same amount of energy. We have been investigating mechanical oscillators that use flat beams, suspended at both ends above substrates with electrode patterns that form a capacitive dive to excite oscillations in the beam. We are examining a number of configuration variables, including beam geometry, mass distribution and excitation loading. We use finite element analysis and lumped parameter models to characterize beam deflection and MatLab scripts to predict performance in electrical circuits. We are also preparing to fabricate our first design for testing.

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Shirane, Atsushi, Hiroyuki Ito, Noboru Ishihara, and Kazuya Masu. "Planar Solenoidal Inductor in Radio Frequency Micro-Electro-Mechanical Systems Technology for Variable Inductor with Wide Tunable Range and High Quality Factor." Japanese Journal of Applied Physics 51 (May 21, 2012): 05EE02. http://dx.doi.org/10.1143/jjap.51.05ee02.

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Shirane, Atsushi, Hiroyuki Ito, Noboru Ishihara, and Kazuya Masu. "Planar Solenoidal Inductor in Radio Frequency Micro-Electro-Mechanical Systems Technology for Variable Inductor with Wide Tunable Range and High Quality Factor." Japanese Journal of Applied Physics 51, no. 5S (2012): 05EE02. http://dx.doi.org/10.7567/jjap.51.05ee02.

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Hammadi, Aymen Ben, Mongia Mhiri, Fayrouz Haddad, Sehmi Saad, and Kamel Besbes. "An Enhanced Design of Multi-Band RF Band Pass Filter Based on Tunable High-Q Active Inductor for Nano-Satellite Applications." Journal of Circuits, Systems and Computers 26, no. 04 (2016): 1750055. http://dx.doi.org/10.1142/s0218126617500554.

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This paper describes the design of a novel cascode-grounded tunable active inductor and its application in an active band-pass filter (BPF) suitable for multi-band radio frequency (RF) front-end circuits. The proposed active inductor circuit uses feedback resistance to improve the equivalent inductance and the quality factor. The novelty of this work lies on the use of a few number of multi-finger transistors, which allows reducing strongly the power consumption and the silicon area. In other words, we demonstrate that the use of variable P-type Metal-Oxide-Semiconductor (PMOS) resistor and controllable current source have a good potential for wide tuning in terms of inductance value, quality factor and frequency operation. The RF BPF is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multi-band operation is achieved through control voltages. The designed active inductor and RF BPF have been implemented in a standard 0.13[Formula: see text][Formula: see text]m Complementary Metal Oxide Semiconductor (CMOS) technology. The simulation results are compared between schematic and post-layout design for inductance value, quality factor, transmission coefficient S21 and noise. This design yields encouraging results: the inductance value can be tuned from 10.94 to 44.17[Formula: see text]nH with an optimal quality factor around 2,581. In addition, the center frequency of the BPF can be tuned between 2 and 4.84[Formula: see text]GHz with an average insertion loss of [Formula: see text][Formula: see text]dB. Throughout this range, the noise figure is between 10.49 and 9.22[Formula: see text]dB with an input referred 1[Formula: see text]dB compression point of [Formula: see text][Formula: see text]dBm and IIP3 of 7.36[Formula: see text]dBm. The filter occupies 25.43[Formula: see text][Formula: see text]m of active area without pads and consumes between 2.38 and 2.84[Formula: see text]mW from a 1[Formula: see text]V supplying voltage.

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Bi, Rui Ke, Xiu Yan Wei, Jing Lin Wu, and Hang Guo. "The Research on Electroplating Technology Used for RF Micro Inductor Coil." Key Engineering Materials 645-646 (May 2015): 783–89. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.783.

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In this paper, we focus on the electroplating technology used for RF micro inductor coil. The technological parameters in DC electroplating are determined by SEM, linear sweep voltammetry and so on. It turns out that a high quality of plating layer is obtained when the PH value of electrochemical solution is 9, temperature is 45°C,current density is 1 A/dm2, additive is added and stirred slowly. Then the research on pulse electroplating is conducted on the basis of DC electroplating, and the result indicates that the pulse plating layer is of better quality compared with DC plating layer. Afterwards, surface structure and resistance of the copper layer are analyzed, demonstrating the obtained coating layer is good enough to be the main structure of micro inductor coil. In the end, this electroplating technology is applied to micro inductor coil. The simulation, fabrication, package and test of micro inductor coil are introduced briefly.

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Lin, Yong Peng, Shun Tao, Xiang Ning Xiao, and Mei Rong Wu. "A Control Method to Suppress Resonance and Improve Current Quality for Inverter System with LCL Filter." Applied Mechanics and Materials 644-650 (September 2014): 3528–33. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3528.

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The LCL filter is easy to resonate, especially in the new energy power system with multiple inverters. The LCL filter resonant formulas are derived in this paper and a novel double closed loop control strategy combing with the structure of the LCL filter was proposed at the base on feedback of capacitor current as a result. In the control system, the inner loop feedback the first differential voltage of filter inductor at the grid side to damp the resonance and nature of first differential voltage of filter inductor is explained; the grid current outer loop achieves direct control of the grid current for high power factor and utilization efficiency. The simulation results show that the grid-side inductor voltage differential feedback control have a better current control effect both in the condition of the normal power grid voltage and distorted grid voltage, and the fluctuations of power and dc voltage are reduced.

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Cheng, Xu, Haijun Gao, Feng-Jun Chen, Xinlin Xia, and Xianjin Deng. "A low phase noise InGaP–GaAs HBT Colpitts VCO with a high quality differential inductor." Analog Integrated Circuits and Signal Processing 100, no. 2 (2019): 469–82. http://dx.doi.org/10.1007/s10470-019-01426-w.

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Mansour, Marwa, and Islam Mansour. "Triple bands Class-C voltage-controlled power oscillator based on high-quality factor asymmetry inductor." Microelectronics Journal 116 (October 2021): 105251. http://dx.doi.org/10.1016/j.mejo.2021.105251.

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Modzelewski, Juliusz, та Katarzyna Kulma. "An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers". Archives of Electrical Engineering 61, № 2 (2012): 221–37. http://dx.doi.org/10.2478/v10171-012-0019-x.

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An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers In the paper an improved method of calculation of the inductance and capacitances in the π1 circuit for Class A, AB, B, and C resonant power amplifiers is presented. This method is based on an assumption that the quality factor of the inductor is finite and the capacitors are lossless. The input parameters for calculations are the amplifier load resistance, the transistor load resistance, the quality factor of the inductor, the loaded quality factor of the designed circuit, and the operating frequency. The presented method allows reducing the required regulation range of π1 circuits elements in built resonant amplifiers as compared to the traditional calculation methods assuming lossless capacitors and inductor. This advantage is important, in particular, for long- and medium-wave transistor power amplifiers, where capacitances in π1 circuits are high comparing to typical trimming capacitors.

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Takano, Takamasa, Satoru Kuramochi, and Hobie Yun. "3D IPD on Thru Glass Via Substrate using panel Manufacturing Technology." International Symposium on Microelectronics 2017, no. 1 (2017): 000097–102. http://dx.doi.org/10.4071/isom-2017-tp41_060.

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Abstract As electronic products become smaller and thinner with increasing number of functions, the demand for high density and high integration becomes stronger. Glass has many properties that make it an ideal substrate for high integration substrate such as; ultra high resistivity, adjustable thermal expansion (CTE) high modulus, low dielectric constant, low dielectric loss and manufacturability with large panel sizes. Multi-bands with carrier aggregation, Wi-Fi/GPS coexistence, and LTE-U make RF front end more and more complicated. 3D IPD (integrated passive devices) on Glass substrate technology could be advantage solution include reducing power consumption and small form factor. This paper presents a demonstration of 3D RF front end filters using 3D solenoid inductors with through glass vias (TGV) and Cu-SiN-Cu MIM structure on Gen1 glass substrate (300mm × 400mm) panel format using color filter manufacturing line for flat panel display. For inductors, drastic performance (size and low resistance therefore high-quality factor) improvement have been demonstrated by technology evolutions from 3D solenoid using TGV with conformal Cu plating method, achieving low resistance of 3.1mohm per 70um diameter TGV on a 400um thick glass panel. This low-resistance TGV with 2.7mOhm/sq TGV connections on both sides of the glass substrate, record high inductor quality factor of 39 was obtained at 2.5GHz using five and half turn inductor of 7.9nH inductance, For capacitors, we have successfully integrated a Cu MIM (metal-insulator-metal) structure by using 15um thick Cu plates and dielectric, resulting in high capacitance density of 0.26nF/mm2 for RF application. By integrating TGV inductor-first and MIM capacitor-next, high-performance and high-density LC components are synthesized to perform as RF front end filters such as low-pass filters, diplexers, triplexers, and multiplexers. The 3D inductors, Cu MIM, LC resonators and filters were successfully integrated using glass panel manufacturing infrastructure for the first time. Process characterization and process control monitors were evaluated at the panel level to address high-volume and high-yield manufacturability of RF filters with the unprecedented filter performance in terms of insertion loss and out of band rejections in smaller form factor than any other technologies have achieved so far. Furthermore, the TGV filters were mounted on electrical evaluation boards as well as JEDEC standard testing boards to check any device-level, chip-level, and board-level reliabilities associated with glass or TGV materials as well as their interaction with Cu, SiN, polymer inter layer dielectric materials, and solder joints, showing no performance degradations during thermal cycling, drop shock, bending, or high-power testing situations.

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Pares, G., J. P. Michel, E. Deschaseaux, et al. "INDUCTORS USING 2.5D SILICON INTERPOSER WITH THICK RDL AND TSV-LAST TECHNOLOGIES." International Symposium on Microelectronics 2017, no. 1 (2017): 000072–77. http://dx.doi.org/10.4071/isom-2017-tp32_061.

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Abstract Silicon interposers represents an interesting alternatives to organic packages for the fabrication of complex System In Package (SIP) modules especially for RF application. Among the advantages of this technology are the capability to fabricate fine-pitch redistribution layers and also to embed high quality passive components inside the interposer. This allows the passive components to be very close to the active chips resulting in highly integrated and high performance systems. To keep the technology at a reasonable cost these last add-on features need to be fabricated with no or minor additional process steps that the ones needed for the fabrication of the interposer itself. In this work we present the design and the fabrication of various design of planar and 3D inductor devices fully compatible with the realization of a silicon interposer that is used to host an RF transmitter system operating in the 0.4 to 1 GHz frequency range. The inductors are built using two thick levels of copper RDL, on both sides of a high resistive silicon substrate and connected by through silicon via-last (TSV-last). This later doesn't require additional metallization to be realized. A dedicated test vehicle was designed to study various inductor types including planar spirals, 3D solenoids and 3D torus. To facilitate the design work, parameterized cells were built for each type of inductors. The structures geometry are designed and optimized, using electromagnetic simulator, to target inductance values in the range of 0.5 to 10 nH while addressing a quality factor greater than 20. The second part of the paper focuses on the process used to build the test vehicle, especially the realization of thick copper RDL layers on both sides of the interposer silicon wafer and the TSV-last module. Physical and DC electrical characterizations are presented to assess the integrity of the individual technology modules like thick copper RDL and TSV. The last part of the work is dedicated to the electrical characterization of the inductor devices in the targeted RF frequency range. Experimental results are presented and discussed in order to give some insight on the impact of the different design parameters on the performances of the inductors.

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Herrault, Florian, M. Yajima, M. Chen, C. McGuire, and A. Margomenos. "Silicon-Embedded RF Micro-Inductors for Ultra-Compact RF Subsystems." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (2015): 000939–57. http://dx.doi.org/10.4071/2015dpc-tp44.

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Advances in 2.5D and 3D integration technologies are enabling ultra-compact multi-chip modules. In this abstract, we present the design, fabrication, and experimental characterization of RF inductors microfabricated inside deep silicon recesses. Because silicon is often used as a substrate of packaging material for 3D integration and microelectromechanical systems (MEMS), developing microfabrication technologies to embed passive components in the unused volume of the silicon package is a promising approach to realize ultra-compact RF subsystems. Inductors and capacitors are critical in dc-bias circuits for MMICs in order to suppress low-frequency oscillations. Because it is particularly important to have these passive components as close to the MMIC as possible with minimum interconnection parasitics, silicon-embedded passives are an attractive solution. Further, silicon-embedded passives can potentially reduce the overall volume of RF subsystems when compared to modules using discrete passives. Although inductors inside the volume of silicon wafers have previously been reported, they typically operated in the 1–200 MHz frequency range, mostly featuring inductors with wide (50–100 μm) conductors and wide (50–100 μm) interconductor gaps due to fabrication limitations. We first explored process limitations to fabricate structural and electrical features inside 75 to 100-μm-deep silicon cavities. The cavities were etched into the silicon using deep reactive ion etching. Inside these recesses, we demonstrated the fabrication of thin (0.2 μm) and thick (5 μm) gold patterns with 3 μm resolution using lift-off and electroplating processes, respectively. The lift-off process used an image reversal technique, and the plated gold conductors were fabricated through a 6.5-μm-thick photoresist mold. The feature sizes ranged from 3 to 50 μm. For photoresist exposure, an i-line Canon stepper was utilized, and configured specifically to focus at the bottom of the cavities, a key process requirement to achieve high-resolution features. These microfabrication results enabled the design of high-performance RF inductors, which will be discussed in the next section. In addition, we demonstrated the fabrication of 30-μm-deep 3-μm-diameter silicon-etched features inside these cavities, a stepping stone towards achieving high-capacitance-density integrated trench capacitors embedded inside silicon cavities. The silicon-embedded RF inductors were microfabricated on 500-μm-thick high-resistivity (ρ &gt; 20,000 Ω.cm) silicon wafers. First, 75-μm-deep cavities were etched using DRIE. Various two-port coplanar waveguide (CPW) inductor designs were microfabricated. The inductor microfabrication relied on sputtered titanium/gold seed layers, thick AZ4620 photoresist molds, and three 5-μm-thick electroplated gold layers stacked on top of each other to define the inductor conductor and connections. By using a combination of three electroplated layers, high-power-handling low-loss inductors were fabricated. Measurements were performed on a RF probe station, with on-wafer calibration structures. The losses associated with the CPW launchers were de-embedded prior to inductor measurements, and inductor quality factor greater than 40 was measured on various inductors with inductance of approximately 1 nH, and self-resonant frequency at 30 GHz. These results were in agreement with models performed using SONNET simulation package, and are comparable with than that of inductors fabricated on planar silicon wafers.

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Kim, Bruce, and Sang-Bock Cho. "3D TSV-based Inductor Design for a Secure Internet of Things." International Symposium on Microelectronics 2016, no. 1 (2016): 000364–67. http://dx.doi.org/10.4071/isom-2016-wp53.

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Abstract This paper describes the design and modeling of through-silicon via (TSV)-based high-density 3D inductors for Internet of Things (IoT) applications and presents some possible challenges for TSV-based inductors in IoT applications. For cybersecurity infrastructure, we designed IoT with hardware security in mind. We provide a secure design for Internet of Things based on secure 3D inductors and then show case studies of high-density RF packages with TSV-based inductors that require hardware security, such as military applications. We use ferromagnetic materials to achieve high inductance with good quality factor.

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Li, Xiang Hong, Jian Lin Liu, Bin Zhen Zhang, Xiang Jiao Meng, and Chang Hong Ji. "Design and Analysis of a MEMS Tunable Inductor Based on UV Lithography of SU-8." Advanced Materials Research 341-342 (September 2011): 36–41. http://dx.doi.org/10.4028/www.scientific.net/amr.341-342.36.

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This paper reports the design of a tunable radio-frequency (RF) inductor and analyses the parameters that influence the quality factor (Q) of the inductor. In our paper we mainly discuss the influence of the thickness of the metal layer on the Q when other parameters are fixed. In order to achieve the high thickness, we use SU-8 as our photoresist instead of the traditional photoresist. Through the analysis, we calculate out the thickness of the metal layer is 23um when the Q reaches to maximum.

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Blinov, Andrei, Ievgen Verbytskyi, Denys Zinchenko, Dmitri Vinnikov, and Ilya Galkin. "Modular Battery Charger for Light Electric Vehicles." Energies 13, no. 4 (2020): 774. http://dx.doi.org/10.3390/en13040774.

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Rapid developments in energy storage and conversion technologies have led to the proliferation of low- and medium-power electric vehicles. Their regular operation typically requires an on-board battery charger that features small dimensions, high efficiency and power quality. This paper analyses an interleaved step-down single-ended primary-inductor converter (SEPIC) operating in the discontinuous conduction mode (DCM) for charging of battery-powered light electric vehicles such as an electric wheelchair. The required characteristics are achieved thanks to favourable arrangement of the inductors in the circuit: the input inductor is used for power factor correction (PFC) without additional elements, while the other inductor is used to provide galvanic isolation and required voltage conversion ratio. A modular interleaved structure of the converter helps to implement low-profile converter design with standard components, distribute the power losses and improve the performance. An optimal number of converter cells was estimated. The converter uses a simple control algorithm for constant current and constant voltage charging modes. To reduce the energy losses, synchronous rectification along with a common regenerative snubber circuit was implemented. The proposed charger concept was verified with a developed 230 VAC to 29.4 VDC experimental prototype that has proved its effectiveness.

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Tkachov, R. O., Volodymyr V. Kukhar, Eduard S. Klimov, and Andriy H. Prysiazhnyi. "Development and Application of Tube End Forming Process with Combined Swaging and Local Differential Pre-Heating." Materials Science Forum 946 (February 2019): 755–60. http://dx.doi.org/10.4028/www.scientific.net/msf.946.755.

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The performed research helped to develop and implement a new process of manufacturing small high pressure cylinders, in which the operation of pressing of tubular blanks with preliminary induction heating of the deformation zone. A two-layer inductor was designed and an industrial unit for preliminary differentiated induction pre-heating for the developed technological process. The forming rate was determined, ensuring preservation of the specified temperature difference and manufacturing of deformed tube end in accordance with the requirements for its geometry. Heating die-blocks were designed for blanks deforming for application in manufacturing of diameter, allowing keeping the necessary temperature gradient at deforming. Developed technological lubricants can be used for obtaining high quality products, increase in labor protection and die-blocks durability.

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Chiu, Liu, and Hong. "A Robust Fully-Integrated Digital-Output Inductive CMOS-MEMS Accelerometer with Improved Inductor Quality Factor." Micromachines 10, no. 11 (2019): 792. http://dx.doi.org/10.3390/mi10110792.

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This paper presents the design, fabrication, and characterization of an inductive complementary metal oxide semiconductor micro-electromechanical systems (CMOS-MEMS) accelerometer with on-chip digital output based on LC oscillators. While most MEMS accelerometers employ capacitive detection schemes, the proposed inductive detection scheme is less susceptible to the stress-induced structural curling and deformation that are commonly seen in CMOS-MEMS devices. Oscillator-based frequency readout does not need analog to digital conversion and thus can simplify the overall system design. In this paper, a high-Q CMOS inductor was connected in series with the low-Q MEMS sensing inductor to improve its quality factor. Measurement results showed the proposed device had an offset frequency of 85.5 MHz, sensitivity of 41.6 kHz/g, noise floor of 8.2 mg/Hz, bias instability of 0.94 kHz (11 ppm) at an average time of 2.16 s, and nonlinearity of 1.5% full-scale.

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Zhang, Li. "Design Methodology for Three-Phase Four-Wire T-Type Inverter With Neutral Inductor." CPSS Transactions on Power Electronics and Applications 6, no. 1 (2021): 93–105. http://dx.doi.org/10.24295/cpsstpea.2021.00008.

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Three-level (3L) converters have been widely used in industry for decades. Compared to the three-phase-three-wire (3P3W) 3L inverter, the three-phase-four-wire (3P4W) one is able to supply the unbalanced loads but has to afford much larger filter inductors because the neutral wire provides a path for high-switching zero-sequence currents. To save filter inductances, a neutral inductor is proposed to insert in the neutral wire. Meanwhile, a complete design methodology is put forward to design the filter inductors and the neutral inductor. With low-frequency zero-sequence currents flowing through the neutral wire, the three-phase load voltages might become unbalanced and/or distorted. To improve the voltage quality, a resonant controller, with the resonant frequency at fundamental output frequency (fo), is presented to add into the zero-sequence voltage loop for balancing load voltages; concurrently, the other resonant controller, with the resonant frequency at 3fo, is presented to insert in the zero-sequence voltage loop or neutral current loop for mitigating voltage distortion. Finally, all of the proposed works are verified on a 3P4W T-type inverter.

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Li, Haiwang, Jiasi Liu, Tiantong Xu, Jingchao Xia, Xiao Tan, and Zhi Tao. "Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor." Micromachines 9, no. 10 (2018): 528. http://dx.doi.org/10.3390/mi9100528.

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In this study, the filling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was efficiently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations. Designed control variable experiments were conducted to determine the optimized method. In the control variable experiments, the relationship of multiple experimental variables, including current density (0.25–2 A/dm2), additive concentration (0.5–2 mL/L), and different shapes of TSVs (circle, oral, and square), were systematically analyzed. Considering the electroplating speed and quality, the influence of different factors on experimental results and the optimized parameters were determined. The results showed that increasing current density improved the electroplating speed but decreased the quality. Additives worked well, whereas their concentrations were controlled within a suitable range. The TSV shape also influenced the electroplating result. When the current density was 1.5 A/dm2 and the additive concentration was 1 mL/L, the TSV filling was relatively better. With the optimized parameters, 500-μm-deep TSVs with a high aspect ratio of 10:1 were fully filled in 20 h, and the via density reached 70/mm2. Finally, optimized parameters were adopted, and the electroplating of 1000-μm-deep TSVs with a diameter of 100 μm was completed in 45 h, which is the deepest and smallest through which a three-dimensional inductor has ever been successfully fabricated.

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Lin, Kuei-Cheng, Hwann-Kaeo Chiou, Po-Chang Wu, Wei-Hsien Chen, Chun-Lin Ko, and Ying-Zong Juang. "2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor." IEEE Transactions on Components, Packaging and Manufacturing Technology 3, no. 8 (2013): 1286–92. http://dx.doi.org/10.1109/tcpmt.2012.2227260.

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Wang, Xinjun, Huaihao Chen, Xiaoling Shi, et al. "A novel NiZn ferrite integrated magnetic solenoid inductor with a high quality factor at 0.7–6 GHz." AIP Advances 7, no. 5 (2016): 056606. http://dx.doi.org/10.1063/1.4973283.

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Liu, Yuxing, Jiazhu Xu, Zhikang Shuai, et al. "A Novel Harmonic Suppression Traction Transformer with Integrated Filtering Inductors for Railway Systems." Energies 13, no. 2 (2020): 473. http://dx.doi.org/10.3390/en13020473.

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This study analyzes and evaluates the feasibility of a harmonic suppression traction transformer (HSTT) for harmonic reduction in railway systems. This new type of transformer can improve the power quality of railway systems by preventing high-frequency harmonic currents from injecting into the traction grid. As the physical size of available space in high-speed trains is strictly limited, low space-occupying filtering techniques are needed. Therefore, an HSTT with integrated filtering inductors (IFIs) capable of being implemented in regular trains is proposed. Taking advantage of the HSTT, a specially constructed inductive-capacitive-inductive (LCL)-type filter is used for harmonic suppression instead of a regular LCL-type filter. The proposed filter is composed of an integrated inductor, leakage inductor of the traction transformer, and an external filter capacitor. In this paper, we analyze the topology of the proposed system, construct a mathematical model to reveal the magnetic decoupling theory of IFIs, and discuss the design and calculation procedures of the HSTT with IFIs. The field circuit coupling simulation of the HSTT with IFIs is performed to validate the effectiveness of the proposed system. Finally, the practical operation based on a 10 kVA prototype shows that the proposed scheme can not only suppress the high-order frequency harmonics but also decrease the installed space of filter devices.

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Sirenko, M. M., B. M. Gorkunov, S. G. Lvov, and V. V. Lysenko. "Automated Unit for Magnetization of Strong Magnets of Electromagnetic Drives." Metrology and instruments, no. 2 (May 21, 2020): 13–21. http://dx.doi.org/10.33955/2307-2180(2)2020.13-21.

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The paper is about the development of an automated unit with optimum energy and mass-dimensional parameters for high-quality magnetization of magnets of electromagnetic drives, while preserving the integrity of their windings. The authors develop an approach for calculating amplitude and width of magnetization pulse. The authors than estimate the rise time of leading edge of the pulse, with respect to conditions of complete magnetization of the electromagnetic drive’s magnetic conductor and preservation of its excitation winding integrity. For the formation of the magnetization pulse with given parameters, the authors propose an electronic device, which feedbacks bitween the drive winding and the pulse current source, which provides power to the inductor winding. The authors propose a method of the inductor magnetic system synthesis by criteria of: given magnetic field strength in inductor’s operating volume; power supply unit minimal dimensions and it power consumption while magnetizing. The final result is obtaining cross-section profile of the inductor electrical coil with certain dimensions and number of winding’s turns of a wire of certain diameter. In order to optimize the mass, size, magnetic and energy parameters of the inductor, the authors solve a problem of synthesizing its magnetic system in way of calculating the parameters of the magnetic field for operating volume of the inductor. It is determined by the characteristic overall dimensions of the NZTB type electromagnetic drives (brakes, 0.2 m in diameter), which were subject to magnetization in a field with strength of at least 400 A/m. The result is the determination of geometrical parameters and the cross-section profile of the inductor electrical coil. This profile ensures the uniformity of the magnetic field when magnetizing the electromagnetic drive of given overall dimensions. On the basis of all these results, the authors develop the functional scheme of the automated unit and propose a structure of a panel for monitoring and management of devices and units involved.

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Sivaperumal, P., Subranhsu Sekhar Dash, and K. Saravanan. "Enhancing the power of quality issues using superconducting magnetic storage devices–based dynamic voltage restorer–aided switched coupled inductor inverter with space vector pulse width modulation techniques." Measurement and Control 52, no. 9-10 (2019): 1329–43. http://dx.doi.org/10.1177/0020294019858169.

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This paper emphasizes on proposing a dynamic voltage restorer–based superconducting magnetic storage devices have utilized to power quality issues. Dynamic voltage restorer can be used for different topologies of the inverter. The conventional topology of dynamic voltage restorer possessing voltage source inverter or Z-source inverter is modified into a switched coupled inductor inverter which has the clear edge in power transfer over the former. The versatility of the controller is enhanced by this work by deploying a fuzzy combine discrete wavelet transforms. The proposed system in this paper, switched coupled inductor inverter–based dynamic voltage restorer-superconducting magnetic storage devices on mitigating the interruption, harmonics and voltage sag/swell. The operating of switched coupled inductor inverter has buck/boost function capability and reduced number of passive components. Due to digitalization, higher utilization factor and reduced harmonic content, controller of fuzzy logic–space vector pulse width modulation techniques with filter application of discrete wavelet transform is used to operate of switched coupled inductor inverter. The hysteresis controller is used to perform the superconducting magnetic storage devices device, has the ability in the storage of real power with high energy density and protects the consumer from grid fluctuation. To detect the power quality disturbances quickly response and improve the compensation capability of dynamic voltage restorer-superconducting magnetic storage devices. The whole of the suggested system is simulated in MATLAB/Simulink and realized as a prototype whose control pulses are duly generated and fed by dSPACE 1104 controller.

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Li, Yan, and Gang Li. "A Low-Cost Hybrid Active Power Filter for High Voltage System." Applied Mechanics and Materials 241-244 (December 2012): 767–72. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.767.

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A novel low-cost shunt hybrid active power filter for power quality in high voltage system is proposed in the paper. The active power filter is based on three-phase four-switch structure. An inductor is parallel in the second-side of the transform, instead of connected in the first-side of transform. An improved SVPWM is proposed according to the APF structure. A novel coordinate matrix is proposed to transform three-phase circumrotating coordinate into two-phase static coordinate. The zero vector is composed of two space voltage vectors with same breadth and contrary direction at same working time in a switch period. Simulation results confirm the validity of the proposed structure and the improved SVPWM.

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Halkhams, Imane, Mahmoud Mehdi, Said Mazer, Moulhime El Bekkali, and Wafae El Hamdani. "Improved Fully Differential Low Power Active Filter." International Journal of Power Electronics and Drive Systems (IJPEDS) 8, no. 2 (2017): 747. http://dx.doi.org/10.11591/ijpeds.v8.i2.pp747-754.

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This paper relates the new topology and simulations of a fully differential CMOS active filter for mm wave band applications. The advantages of the differential topology over the single ended one are discussed and the quality factor is tuned to insure application requirements, including narrow bandwidth and high selectivity due to a differential negative resistance that reuses the filter’s current. Using this topology enables independent tuning of the quality factor and low power consumption while compensating the resistive loss of the filter. Very high filter performance was obtained with the simulated active inductor based active filter that was designed using CMOS 0.35 µm technology from AMS foundry and that resonates at 30 GHz with a high quality factor of Q &gt; 500.

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Takai, Nobukazu, Takashi Okada, Kenji Takahashi, et al. "Single Inductor Bipolar Outputs DC-DC Converter with Current Mode Control Circuit." Key Engineering Materials 534 (January 2013): 220–26. http://dx.doi.org/10.4028/www.scientific.net/kem.534.220.

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Mobile equipment such as organic-EL display, digital still camera and so on re-quire both positive and negative power supply voltage to obtain high quality. Single InductorMultiple-Output (SIMO) DC-DC converter can provide a pair of positive and negative outputvoltages with only one external inductor. This paper describes SIMO DC-DC Converter usingproposed current-mode control (CMC) circuit. The proposed CMC circuit realizes high responsespeed for the change of load current. Spectre simulations with 0.18m CMOS process parameterare performed to verify the validity of the proposed converter. The simulation results indicatethat the proposed converter has higher response time compared with conventional converter.

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Journal articles on the topic 'High quality inductor'

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