Relevant bibliographies by topics / High Temperature Gallium Nitride

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'High Temperature Gallium Nitride'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "High Temperature Gallium Nitride"

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Volcheck, V. S., M. S. Baranava, and V. R. Stempitsky. "Thermal conductivity of wurtzite gallium nitride." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 67, no. 3 (2022): 285–97. http://dx.doi.org/10.29235/1561-8358-2022-67-3-285-297.

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This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity. Since the heat in gallium nitride is transported almost exclusively by phonons, its thermal conductivity has a temperature behavior typical of most nonmetallic crystals: the thermal conductivity increases proportionally to the third power of temperature at lower temperatures, reaches its maximum at approximately 1/20 of the Debye temperature and decreases proportionally to temperature at higher temperatures. It is shown that the thermal c
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Drygaś, Mariusz, Katarzyna Lejda, Jerzy F. Janik, et al. "New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN–Titanium Nitride TiN." Materials 14, no. 14 (2021): 3794. http://dx.doi.org/10.3390/ma14143794.

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Presented is a study on the preparation, via original precursor solution chemistry, of intimately mixed composite nanocrystalline powders in the system gallium nitride GaN–titanium nitride TiN, atomic ratio Ga/Ti = 1/1, which were subjected to high-pressure (7.7 GPa) and high-temperature (650, 1000, and 1200 °C) sintering with no additives. Potential equilibration toward bimetallic compounds upon mixing of the solutions of the metal dimethylamide precursors, dimeric {Ga[N(CH3)2]3}2 and monomeric Ti[N(CH3)2]4, was studied with 1H- and 13C{H}-NMR spectroscopy in C6D6 solution. The different nitr
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Kometani, Ryosuke, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori. "Surface morphology on high-temperature plasma-etched gallium nitride." Transactions of the Materials Research Society of Japan 38, no. 2 (2013): 325–28. http://dx.doi.org/10.14723/tmrsj.38.325.

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Езубченко, И. С., М. Я. Черных, П. А. Перминов та ін. "Особенности роста гетероструктур нитрида галлия на подложках кремния: управляемая пластическая деформация". Письма в журнал технической физики 47, № 14 (2021): 26. http://dx.doi.org/10.21883/pjtf.2021.14.51183.18766.

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Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapour deposition. Substrate plastic deformations that occur during the growth process with the effective compressive stresses accumulation in the film were observed at temperatures of 930oC-975oC. An approach of silicon controlled plastic deformation by high-temperature annealing combined with the in situ SiNx layer growth after heterostructure epitaxy is proposed. This approach would simplify optimization of the gallium nitride heterostructures architecture for various technological tasks.
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Yonenaga, I., T. Hoshi, and A. Usui. "High Temperature Hardness of Bulk Single Crystal GaN." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 343–48. http://dx.doi.org/10.1557/s1092578300004488.

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The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.
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Meneghesso, Gaudenzio, Matteo Meneghini, Augusto Tazzoli, et al. "Reliability issues of Gallium Nitride High Electron Mobility Transistors." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 39–50. http://dx.doi.org/10.1017/s1759078710000097.

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In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The ro
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Sugiura, Takaya, Naoki Takahashi, Ryohei Sakota, Kazunori Matsuda, and Nobuhiko Nakano. "High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials." IEEE Journal of the Electron Devices Society 10 (2022): 203–11. http://dx.doi.org/10.1109/jeds.2022.3150915.

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Hicks, M. L., J. Tabeart, M. J. Edwards, et al. "High Temperature Measurement of Elastic Moduli of (0001) Gallium Nitride." Integrated Ferroelectrics 133, no. 1 (2012): 17–24. http://dx.doi.org/10.1080/10584587.2012.663309.

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Volcheck, V. S., and V. R. Stempitsky. "Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material." Doklady BGUIR 19, no. 6 (2021): 74–82. http://dx.doi.org/10.35596/1729-7648-2021-19-6-74-82.

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The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride heterostructure field-effect transistor lead to the formation of a hot spot near the conducting channel and result in the degradation of the drain current, output power and device reliability. The purpose of this work is to develop the design of a gallium nitride heterostructure field-effect transistor with an effective heat-removal system and to study using
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Duraij, Martijn S., Yudi Xiao, Gabriel Zsurzsan, and Zhe Zhang. "Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions." Journal of Microelectronics and Electronic Packaging 18, no. 4 (2021): 168–76. http://dx.doi.org/10.4071/imaps.1545724.

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Abstract Compact power electronic circuits and higher operating temperatures of switching devices call for an analysis and verification on the impact of the parasitic components in these devices. The found drift mechanisms in a gallium-nitride field effect transistors (GaN-FET) are studied by literature and related to measurement results. The measurements in extreme temperature conditions are far beyond the manufacturer-recommended operating range. Influences to parasitic elements in both static and dynamic operation of the GaN-FETs are investigated and related toward device losses in switch-m
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Dissertations / Theses on the topic "High Temperature Gallium Nitride"

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Pham, Kevin B. "TRAP CHARACTERIZATION IN HIGH FIELD, HIGH TEMPERATURE STRESSED GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS." Monterey, California. Naval Postgraduate School, 2013. http://hdl.handle.net/10945/32885.

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Gallium Nitride (GaN) high electron mobility transistors (HEMTs) offer higher power output over existing technology. However, issues such as current collapse and kink effect hinder GaN HEMTs performance. The degraded performance is linked to traps within the device. Capacitance-voltage (C-V) and current-voltage (I-V) measurements were performed on commercially available GaN-on-Si to characterize traps before and after high field, high temperature stressed conditions. The results revealed the devices had less gate current leakage after stressing and the C-V characteristics changed dramatically
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Sundaresan, Siddarth G. "Ultra-fast high temperature microwave processing of silicon carbide and gallium nitride." Fairfax, VA : George Mason University, 2007. http://hdl.handle.net/1920/2851.

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Thesis (Ph.D.)--George Mason University, 2007.<br>Title from PDF t.p. (viewed Oct. 29, 2007). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 170. Includes bibliographical references (p. 160-169). Also available in print.
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Colmenares, Juan. "Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics." Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.

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Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative perf
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Zettler, Johannes Kristian. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/18926.

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Dichte Ensembles aus GaN-Nanodrähten können in der Molekularstrahlepitaxie mithilfe eines selbstinduzierten Prozesses sowohl auf kristallinen als auch amorphen Substraten gezüchtet werden. Aufgrund der Natur selbstgesteuerter Prozesse ist dabei die Kontrolle über viele wichtige Ensembleparameter jedoch eingeschränkt. Die Arbeit adressiert genau diese Einschränkungen bei der Kristallzucht selbstinduzierter GaN-Nanodrähte. Konkret sind das Limitierungen bezüglich der Nanodraht-Durchmesser, die Nanodraht-Anzahl-/Flächendichte, der Koaleszenzgrad sowie die maximal realisierbare Wachstumstemperatu
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Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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Chen, Tianjiao. "Low Temperature Surface Reconstruction Study on Wurtzite Gallium Nitride." Ohio University Honors Tutorial College / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1392904494.

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Mußer, Markus [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker." Freiburg : Universität, 2015. http://d-nb.info/1123482640/34.

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Stevens, Lorin E. "Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor." DigitalCommons@USU, 2013. http://digitalcommons.usu.edu/etd/1506.

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Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researche
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Farrant, Luke. "Gallium nitride processing for high power microwave devices." Thesis, Cardiff University, 2005. http://orca.cf.ac.uk/56118/.

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This thesis contains literature reviews relating to inductively coupled plasmas and their use in etching gallium nitride with chlorine based plasmas. The properties of gallium nitride, how these properties make gallium nitride a suitable material for high power microwave transistors and how such transistors will help improve the systems in which they might be used are also reviewed. In this thesis, a novel, non-destructive method of measurement of the conductivity of a semiconductor through measurement of the increase in the bandwidth of the resonant peak of a microwave dielectric resonator wh
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Zhou, Wendi. "Fabrication and characterization of gallium nitride high electron mobility transistors." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119603.

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Compound semiconductor gallium nitride high electron mobility transistors (HEMTs) have significant potential for use in the electronics industry, including radar applications and microwave transmitters for communications. These wide band gap semiconductors have unique material properties that lead to devices with high power, efficiency, and bandwidth compared with existing technologies. In this work, the electrical properties of gallium nitride HEMTs on silicon substrates were studied in the context of drain characteristics and breakdown voltage. The design, fabrication, and characterization o
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Books on the topic "High Temperature Gallium Nitride"

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Meneghesso, Gaudenzio, Matteo Meneghini, and Enrico Zanoni, eds. Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2.

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Zhi-Yue, Xu, and United States. National Aeronautics and Space Administration., eds. The high temperature creep deformation of SiN-6YO-ZAIO. National Aeronautics and Space Administration, 1988.

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Steven, Binari, ed. Wide-bandgap semiconductors for high-power, high-frequency, and high temparture applications--1999: Symposium held April 5-8, 1999, San Francisco, California, U.S.A. Materials Research Society, 1999.

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Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). National Aeronautics and Space Administration, Glenn Research Center, 2003.

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Blanchet, Thierry Alain. Demonstration of the feasibility of high temperature bearing lubrication from carbonaceous gases. National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program, 1996.

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F, Adams Donald, Zimmerman Richard S, and Ames Research Center, eds. Static tensile and tensile creep testing of four boron nitride coated ceramic fibers at elevated temperatures: Final report. NASA Ames Research Center, 1989.

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J, Camassel, European Materials Research Society. Meeting, Symposium A on High Temperature Electronics: Materials, Devices, and Applications (1996 : Strasbourg, France), and Symposium B on Thin Film Materials for Large Area Electronics (1996 : Strasbourg, France), eds. Frontiers in electronics: High temperature and large area applications : proceedings of Symposium A on High Temperature Electronics: Materials, Devices, and Applications, and proceedings of Symposium B on Thin Film Materials for Large Area Electronics of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996. Elsevier, 1997.

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International High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.). 1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. The Institute of Electrical and Electronics Engineers, Inc., 1998.

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Kelly, Francis Patrick. Growth and processing of gallium nitride at high temperatures in an ultra high-pressure reactor furnace. 2003.

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Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor. Storming Media, 2002.

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Book chapters on the topic "High Temperature Gallium Nitride"

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Matsumoto, K., H. Tokunaga, A. Ubukata, et al. "High Growth Rate MOVPE." In Technology of Gallium Nitride Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-04830-2_6.

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Boćkowski, Michal, Pawel Strąk, Izabella Grzegory, and Sylwester Porowski. "High Pressure Solution Growth of Gallium Nitride." In Technology of Gallium Nitride Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-04830-2_10.

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Romčević, N., M. Romčević, D. R. Khokhlov, and I. I. Ivanchik. "Optical Properties of Gallium-Doped PbTe." In High-Temperature Superconductors and Novel Inorganic Materials. Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4732-3_50.

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Luo, Jun Ting, Kai Feng Zhang, Guo Feng Wang, and Guo Qing Chen. "Superplastic Forming of Silicon Nitride at Low Temperature." In High-Performance Ceramics III. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-959-8.1249.

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Delahoy, Ellis W. "Design Considerations for High Temperature Furnaces." In Carbide, Nitride and Boride Materials Synthesis and Processing. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-009-0071-4_24.

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Herzog, A., and U. Vogt. "Reaction Bonded Silicon Nitride (RBSN) Reinforced by Short SiC Fibres." In High Temperature Ceramic Matrix Composites. Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527605622.ch63.

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Bogaard, Ronald H., and C. Y. Ho. "Thermal Conductivity of Gallium Arsenide at High Temperature." In Thermal Conductivity 20. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0761-7_15.

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Mukhopadhyay, A. K., D. Chakraborty, and S. K. Datta. "High Temperature Failure Mechanisms of Sintered Silicon Nitride." In Fracture Mechanics of Ceramics. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3348-1_26.

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Wiederhorn, S. M., Ralph F. Krause, F. Lofaj, and U. Täffner. "Creep Behavior of Improved High Temperature Silicon Nitride." In Key Engineering Materials. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-965-2.381.

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Backhaus-Ricoult, M., P. Eveno, J. Castaing, and H. J. Kleebe. "High Temperature Creep Behavior of High Purity Hot-Pressed Silicon Nitride." In Plastic Deformation of Ceramics. Springer US, 1995. http://dx.doi.org/10.1007/978-1-4899-1441-5_49.

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Conference papers on the topic "High Temperature Gallium Nitride"

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Takekawa, Nao, Ken Goto, Toru Nagashima, Reo Yamamoto, Junji Kotani, and Yoshinao Kumagai. "High-temperature growth of high-purity AlN layers on AlN substrates by HVPE." In Gallium Nitride Materials and Devices XVI, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2021. http://dx.doi.org/10.1117/12.2577988.

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Uesugi, Kenjiro, Ding Wang, Kanako Shojiki, Shigeyuki Kuboya, and Hideto Miyake. "Development of DUV-LED grown on high-temperature annealed AlN template." In Gallium Nitride Materials and Devices XVI, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2021. http://dx.doi.org/10.1117/12.2576492.

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Caria, Alessandro, Carlo De Santi, Marco Nicoletto, et al. "GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress." In Gallium Nitride Materials and Devices XVII, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2022. http://dx.doi.org/10.1117/12.2608680.

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Cheng, Tin S., A. Summerfield, J. D. Albar, et al. "High-temperature molecular beam epitaxy of hexagonal boron nitride layers (Conference Presentation)." In Gallium Nitride Materials and Devices XIII, edited by Jen-Inn Chyi, Hadis Morkoç, and Hiroshi Fujioka. SPIE, 2018. http://dx.doi.org/10.1117/12.2286495.

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Miyake, Hideto, Yusuke Hayashi, Shi-yu Xiao, and Kazumasa Hiramatsu. "High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation)." In Gallium Nitride Materials and Devices XIII, edited by Jen-Inn Chyi, Hadis Morkoç, and Hiroshi Fujioka. SPIE, 2018. http://dx.doi.org/10.1117/12.2292561.

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Miyake, Hideto, Koh Matsumoto, Akira Mishima, Yuji Tomita, Yoshiki Yano, and Toshiya Tabuchi. "Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere." In Gallium Nitride Materials and Devices XIII, edited by Jen-Inn Chyi, Hadis Morkoç, and Hiroshi Fujioka. SPIE, 2018. http://dx.doi.org/10.1117/12.2292182.

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Iso, Kenji, Shoma Ohtaki, Erina Miyata, Yuka Kido, Hisashi Murakami, and Akinori Koukitu. "Dislocation density reduction in (101 1 ) GaN at a high temperature using tri-halide vapor phase epitaxy." In Gallium Nitride Materials and Devices XV, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2020. http://dx.doi.org/10.1117/12.2543661.

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Zhang, Haojun, Hongjian Li, Panpan Li, Shuji Nakamura, and Steven P. DenBaars. "Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates." In Gallium Nitride Materials and Devices XVII, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2022. http://dx.doi.org/10.1117/12.2610614.

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Hogan, Kasey, Sean Tozier, Milena Graziano, et al. "Magnesium implant-activation in GaN: Impact of high-temperature annealing techniques on the state of implant induced defects and Mg activation (Conference Presentation)." In Gallium Nitride Materials and Devices XIV, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2019. http://dx.doi.org/10.1117/12.2506824.

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Alhamoud, Abdullah A., Nasir Alfaraj, Davide Priante, et al. "Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer." In Gallium Nitride Materials and Devices XIV, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2019. http://dx.doi.org/10.1117/12.2506210.

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Reports on the topic "High Temperature Gallium Nitride"

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Jones, Kenneth A., Randy P. Tompkins, Michael A. Derenge, Kevin W. Kirchner, Iskander G. Batyrev, and Shuai Zhou. Gallium Nitride (GaN) High Power Electronics (FY11). Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada556955.

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Harris, H. M., J. Laskar, and S. Nuttinck. Engineering Support for High Power Density Gallium Nitride Microwave Transistors. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada397860.

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Caverly, Robert H. High Power Gallium Nitride Devices for Microwave and RF Control Applications. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada374652.

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Chintalapalle, Ramana V. Gallium Oxide Nanostructures for High Temperature Sensors. Office of Scientific and Technical Information (OSTI), 2015. http://dx.doi.org/10.2172/1261782.

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Seacrist, Michael. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method. Office of Scientific and Technical Information (OSTI), 2017. http://dx.doi.org/10.2172/1375013.

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Subramania, Ganapathi Subramanian, Patrick Duke Anderson, and Daniel Koleske. High Brightness Room Temperature III-Nitride Based Single Photon Source. Office of Scientific and Technical Information (OSTI), 2016. http://dx.doi.org/10.2172/1562411.

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Wereszczak, A. A., M. K. Ferber, M. G. Jenkins, and C. K. J. Lin. High temperature mechanical performance of a hot isostatically pressed silicon nitride. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/226431.

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Farrell, R., V. R. Pagan, A. Kabulski, et al. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films. Office of Scientific and Technical Information (OSTI), 2008. http://dx.doi.org/10.2172/1015474.

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Wraback, Michael, and Mark Dubinskiy. Rare-Earth Doped Gallium Nitride (GaN)- An Innovative Path Toward Area-scalable Solid-state High Energy Lasers Without Thermal Distortion. Defense Technical Information Center, 2009. http://dx.doi.org/10.21236/ada496417.

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Shah, Pankaj B., and Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada554911.

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