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Books on the topic 'High Temperature Gallium Nitride'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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1

Meneghesso, Gaudenzio, Matteo Meneghini, and Enrico Zanoni, eds. Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2.

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2

Zhi-Yue, Xu, and United States. National Aeronautics and Space Administration., eds. The high temperature creep deformation of SiN-6YO-ZAIO. National Aeronautics and Space Administration, 1988.

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3

Steven, Binari, ed. Wide-bandgap semiconductors for high-power, high-frequency, and high temparture applications--1999: Symposium held April 5-8, 1999, San Francisco, California, U.S.A. Materials Research Society, 1999.

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4

Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). National Aeronautics and Space Administration, Glenn Research Center, 2003.

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5

Blanchet, Thierry Alain. Demonstration of the feasibility of high temperature bearing lubrication from carbonaceous gases. National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program, 1996.

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6

F, Adams Donald, Zimmerman Richard S, and Ames Research Center, eds. Static tensile and tensile creep testing of four boron nitride coated ceramic fibers at elevated temperatures: Final report. NASA Ames Research Center, 1989.

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7

J, Camassel, European Materials Research Society. Meeting, Symposium A on High Temperature Electronics: Materials, Devices, and Applications (1996 : Strasbourg, France), and Symposium B on Thin Film Materials for Large Area Electronics (1996 : Strasbourg, France), eds. Frontiers in electronics: High temperature and large area applications : proceedings of Symposium A on High Temperature Electronics: Materials, Devices, and Applications, and proceedings of Symposium B on Thin Film Materials for Large Area Electronics of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996. Elsevier, 1997.

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8

International High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.). 1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. The Institute of Electrical and Electronics Engineers, Inc., 1998.

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9

Kelly, Francis Patrick. Growth and processing of gallium nitride at high temperatures in an ultra high-pressure reactor furnace. 2003.

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10

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor. Storming Media, 2002.

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11

Zanoni, Enrico, Gaudenzio Meneghesso, and Matteo Meneghini. Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. Springer, 2019.

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12

Zanoni, Enrico, Gaudenzio Meneghesso, and Matteo Meneghini. Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. Springer, 2018.

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13

Baik, Kwang Hyeon. Design, fabrication, and characterization of gallium nitride high power rectifiers. 2004.

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14

Han, Weimin. NMR study of GaAs at high temperature. 1992.

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15

National Aeronautics and Space Administration (NASA) Staff. Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts). Independently Published, 2018.

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16

High-Temperature Tribology of Silicon Nitride Lubricated with Cesium- Based Inorganic Films. Storming Media, 2001.

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17

Micromechanical and electrical properties of monolithic aluminum nitride at high temperatures. National Aeronautics and Space Administration, Glenn Research Center, 2001.

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18

Institute Of Electrical and Electronics Engineers and International High Temperature Electronics Conference 1998 albuquerqu. High Temperature Electronics Conference, 1998 4th International. Institute of Electrical & Electronics Enginee, 1999.

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19

Static tensile and tensile creep testing of four boron nitride coated ceramic fibers at elevated temperatures: Final report. NASA Ames Research Center, 1989.

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20

Camassel, J., and B. Drevillon. Frontiers in Electronics: High Temperature and Large Area Applications (European Materials Research Society Symposia Proceedings). Elsevier Science, 1997.

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21

1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. The Institute of Electrical and Electronics Engineers, Inc, 1998.

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22

Fisher, David. Mechanical Properties of MAX Phases. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901274.

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Abstract:
MAX Phase Materials are uniquely structured carbide and nitride materials which combine the rigidity, oxidation-resistance and high-temperature strength of ceramic materials with such metallic properties as good machinability, thermal-shock resistance, damage-tolerance and good transport properties. Potential applications include microelectronic layers, coatings for electrical contacts, thermal shock-resistant refractories, high-temperature heating elements, neutron-irradiation resistant nuclear applications, thermal barriers, protective aerospace coatings, and bio-compatible materials. The bo
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