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Dissertations / Theses on the topic 'High Temperature Gallium Nitride'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Pham, Kevin B. "TRAP CHARACTERIZATION IN HIGH FIELD, HIGH TEMPERATURE STRESSED GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS." Monterey, California. Naval Postgraduate School, 2013. http://hdl.handle.net/10945/32885.

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Gallium Nitride (GaN) high electron mobility transistors (HEMTs) offer higher power output over existing technology. However, issues such as current collapse and kink effect hinder GaN HEMTs performance. The degraded performance is linked to traps within the device. Capacitance-voltage (C-V) and current-voltage (I-V) measurements were performed on commercially available GaN-on-Si to characterize traps before and after high field, high temperature stressed conditions. The results revealed the devices had less gate current leakage after stressing and the C-V characteristics changed dramatically

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2

Sundaresan, Siddarth G. "Ultra-fast high temperature microwave processing of silicon carbide and gallium nitride." Fairfax, VA : George Mason University, 2007. http://hdl.handle.net/1920/2851.

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Thesis (Ph.D.)--George Mason University, 2007.<br>Title from PDF t.p. (viewed Oct. 29, 2007). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 170. Includes bibliographical references (p. 160-169). Also available in print.

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3

Colmenares, Juan. "Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics." Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.

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Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative perf

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4

Zettler, Johannes Kristian. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/18926.

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Dichte Ensembles aus GaN-Nanodrähten können in der Molekularstrahlepitaxie mithilfe eines selbstinduzierten Prozesses sowohl auf kristallinen als auch amorphen Substraten gezüchtet werden. Aufgrund der Natur selbstgesteuerter Prozesse ist dabei die Kontrolle über viele wichtige Ensembleparameter jedoch eingeschränkt. Die Arbeit adressiert genau diese Einschränkungen bei der Kristallzucht selbstinduzierter GaN-Nanodrähte. Konkret sind das Limitierungen bezüglich der Nanodraht-Durchmesser, die Nanodraht-Anzahl-/Flächendichte, der Koaleszenzgrad sowie die maximal realisierbare Wachstumstemperatu

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5

Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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6

Chen, Tianjiao. "Low Temperature Surface Reconstruction Study on Wurtzite Gallium Nitride." Ohio University Honors Tutorial College / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1392904494.

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7

Mußer, Markus [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker." Freiburg : Universität, 2015. http://d-nb.info/1123482640/34.

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8

Stevens, Lorin E. "Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor." DigitalCommons@USU, 2013. http://digitalcommons.usu.edu/etd/1506.

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Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researche

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9

Farrant, Luke. "Gallium nitride processing for high power microwave devices." Thesis, Cardiff University, 2005. http://orca.cf.ac.uk/56118/.

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This thesis contains literature reviews relating to inductively coupled plasmas and their use in etching gallium nitride with chlorine based plasmas. The properties of gallium nitride, how these properties make gallium nitride a suitable material for high power microwave transistors and how such transistors will help improve the systems in which they might be used are also reviewed. In this thesis, a novel, non-destructive method of measurement of the conductivity of a semiconductor through measurement of the increase in the bandwidth of the resonant peak of a microwave dielectric resonator wh

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10

Zhou, Wendi. "Fabrication and characterization of gallium nitride high electron mobility transistors." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119603.

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Compound semiconductor gallium nitride high electron mobility transistors (HEMTs) have significant potential for use in the electronics industry, including radar applications and microwave transmitters for communications. These wide band gap semiconductors have unique material properties that lead to devices with high power, efficiency, and bandwidth compared with existing technologies. In this work, the electrical properties of gallium nitride HEMTs on silicon substrates were studied in the context of drain characteristics and breakdown voltage. The design, fabrication, and characterization o

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11

Sun, Bingyao. "High-Frequency Oriented Design of Gallium-Nitride (GaN) Based High Power Density Converters." Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/85054.

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The wide-bandgap (WBG) devices, like gallium nitride (GaN) and silicon carbide (SiC) devices have proven to be a driving force of the development of the power conversion technology. Thanks to their distinct advantages over silicon (Si) devices including the faster switching speed and lower switching losses, WBG-based power converter can adopt a higher switching frequency and pursue higher power density and higher efficiency. As a trade-off of the advantages, there also exist the high-frequency-oriented challenges in the adoption of the GaN HEMT under research, including narrow safe gate opera

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12

Huang, Yan, and 黃燕. "Temperature dependent hall effect: studies ofGaN on sapphire." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B42577068.

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13

Wessel, Ashley M. "Imaging gallium nitride high electron mobility transistors to identify point defects." Thesis, Monterey, California: Naval Postgraduate School, 2014. http://hdl.handle.net/10945/41457.

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Approved for public release; distribution is unlimited.<br>The purpose of this thesis is to streamline the sample preparation procedure to maximize the yield of successful samples to be analyzed chemically in an energy dispersive spectrometry detector. The secondary objective of this work is to identify the specific chemical elements needed to ascertain trends in stressing nickel/gold and platinum/gold gated high electron mobility transistors (HEMT). We analyze unstressed devices near the hetero-epitaxial layers to ascertain any inconsistencies due to processing defects. Results show it is pos

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14

Longobardi, Giorgia. "GaN high-voltage transistors : an investigation of surface donor traps." Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708516.

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15

Huang, Yan. "Temperature dependent hall effect studies of GaN on sapphire /." Click to view the E-thesis via HKUTO, 2002. http://sunzi.lib.hku.hk/hkuto/record/B42577068.

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16

Soignard, Emmanuel. "High pressure - high temperature synthesis and studies of nitride materials." Thesis, University College London (University of London), 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407347.

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17

Chu, Rongming. "AlGaN-GaN single- and double-channel high electron mobility transistors /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202004%20CHU.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.<br>Includes bibliographical references (leaves 74-82). Also available in electronic version. Access restricted to campus users.

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18

Hadian, Ali Mohammad. "Joining of silicon nitride-to-silicon nitride and to molybdenum for high-temperature applications." Thesis, McGill University, 1993. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=41370.

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The evolution of advanced ceramic materials over the past two decades has not been matched by improvements in ceramic joining science and technology, particularly for high temperature applications. Of the techniques being evaluated for joining ceramics, brazing has been found to be the simplest and most promising method of fabricating both ceramic/ceramic and ceramic/metal joints. A key factor in ceramic brazing is wetting of the ceramic by the filler metal.<br>This study deals with the application of brazing for the fabrication of $ rm Si sb3N sb4/Si sb3N sb4$ and $ rm Si sb3N sb4/Mo$ joints

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19

Arehart, Aaron R. "Investigation of electrically active defects in GaN, AlGaN, and AlGaN/GaN high electron mobility transistors." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1253626881.

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20

Johnson, Michael Christopher. "In-situ and post-growth investigation of low temperature Group III-nitride thin films deposited via MOCVD /." Thesis, Connect to this title online; UW restricted, 2001. http://hdl.handle.net/1773/9925.

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21

SINGH, VINIT. "HIGH TEMPERATURE CAPACITORS FOR VOLTAGE MULTIPLIERS." University of Cincinnati / OhioLINK, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085685724.

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22

Andrews, Paul. "The high temperature oxidation of a silicon nitride based material." Thesis, University of Leeds, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235596.

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23

Lamkin, Michael Alan. "The high-temperature oxidation and corrosion of a silicon nitride." Thesis, University of Leeds, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277876.

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24

Krishna, Kumar Roshan. "High temperature quantum transport in graphene/hexagonal-boron nitride heterostructures." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/88867/.

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The past decade has seen a new paradigm in solid state physics, where a new class of layered crystals can be thinned down to a monolayer and exhibit drastic changes in their electronic and optical properties in comparison to their bulk counterpart. Graphene was the first, and certainly most outstanding, of this set of so called two-dimensional (2D) materials. Aside from its obvious appeal which earnt its discovery the 2010 Nobel Prize, the electronic properties of graphene are truly unique. Perhaps the most familiar is its linear electron dispersion which hosts quasi-particles that obey the Di

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25

Gibson, William A. "Comparison of Gallium Nitride High Electron Mobility Transistors modeling in two and three dimensions." Thesis, Monterey, Calif. : Naval Postgraduate School, 2007. http://bosun.nps.edu/uhtbin/hyperion-image.exe/07Dec%5FGibson.pdf.

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Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, December 2007.<br>Thesis Advisor(s): Weatherford, Todd R. "December 2007." Description based on title screen as viewed on January 18, 2008. Includes bibliographical references (p. 51-52). Also available in print.

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26

Saini, Dalvir K. "Gallium Nitride: Analysis of Physical Properties and Performance in High-Frequency Power Electronic Circuits." Wright State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=wright1438013888.

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27

Jia, Shuo. "AlGaN/GaN high electron mobility transistors on silicon substrate for RF/microwave applications /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20JIA.

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28

Radhakrishna, Ujwal. "Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/105951.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 285-291).<br>Gallium-Nitride-based high electron mobility transistor (HEMTs) technology is increasingly finding space in high voltage (HV) and high frequency (HF) circuit application domains. The superior breakdown electric f

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29

Namkoong, Gon. "Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/16426.

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30

Penna, Claudio D. "Development of nitride strengthened nickel-chromium alloys for high temperature applications /." Zürich, 2002. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=14606.

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31

Renso, Nicola. "Analysis of degradation mechanisms induced by electrical over-stress on high efficiency gallium nitride LEDs." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422340.

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This thesis investigates the reliability of state-of-the-art InGaN LEDs for lighting applications and the impact of the diffusion-related mechanisms on optoelectronic GaN-based wafers, with the aim to identify the physical mechanisms responsible for the premature degradation of those devices. By means of custom experimental setups, developed during the triennial research activity, it is possible to identify the dominant failure modes and degradation mechanisms of GaN LEDs subjected to electrical over-stress (EOS), both in forward and reverse bias, and to correlate specific failures with the ep

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32

Walker, Dennis Eugene. "The role of defects on Schottky and Ohmic contact characteristics for GaN and AlGaN/GaN high-electron mobility transistors." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1141766860.

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33

Seo, Sang-Woo. "Development of thin film photodetectors and their applications multispectral detection and high speed optical interconnections /." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180408/unrestricted/seo%5fsang-woo%5f200312%5fphd.pdf.

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34

Liang, Hu. "Fabrication of high power InGaN/GaN multiple quantum well blue LEDs grown on patterned Si substrates /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20LIANG.

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35

Cheriton, Ross. "Design and Characterization of InGaN/GaN Dot-in-Nanowire Heterostructures for High Efficiency Solar Cells." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/37905.

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Light from the sun is an attractive source of energy for its renewability, supply, scalability, and cost. Silicon solar cells are the dominant technology of choice for harnessing solar energy in the form of electricity, but the designs are approaching their practical efficiency limits. New multijunction designs which use the tunable properties of the more expensive III-V semiconductors have historically been relegated to space applications where absolute power conversion efficiency, resilience to radiation, and weight are more important considerations than cost. Some of the more recent develop

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36

Hossain, Md Tashfin Zayed. "Electrical characteristics of gallium nitride and silicon based metal-oxide-semiconductor (MOS) capacitors." Diss., Kansas State University, 2013. http://hdl.handle.net/2097/16942.

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Doctor of Philosophy<br>Department of Chemical Engineering<br>James H. Edgar<br>The integration of high-κ dielectrics with silicon and III-V semiconductors is important due to the need for high speed and high power electronic devices. The purpose of this research was to find the best conditions for fabricating high-κ dielectrics (oxides) on GaN or Si. In particular high-κ oxides can sustain the high breakdown electric field of GaN and utilize the excellent properties of GaN. This research developed an understanding of how process conditions impact the properties of high-κ dielectric on Si and

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37

Umana-Membreno, Gilberto A. "A study of gamma-radiation-induced effects in gallium nitride based devices." University of Western Australia. School of Electrical, Electronic and Computer Engineering, 2006. http://theses.library.uwa.edu.au/adt-WU2007.0015.

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[Truncated abstract] Over the past decade, the group III-nitride semiconducting compounds (GaN, AlN, InN, and their alloys) have attracted tremendous research efforts due to their unique electronic and optical properties. Their low thermal carrier generation rates and large breakdown fields make them attractive for the development of robust electronic devices capable of reliable operation in extreme conditions, i.e. at high power/voltage levels, high temperatures and in radiation environments. For device applications in radiation environments, such as space electronics, GaN-based devices are e

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38

Liu, Zhengyang. "Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion." Diss., Virginia Tech, 2017. http://hdl.handle.net/10919/77959.

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Advanced power semiconductor devices have consistently proven to be a major force in pushing the progressive development of power conversion technology. The emerging wide-band-gap (WBG) material based power semiconductor devices are considered as gaming changing devices which can exceed the limit of silicon (Si) and be used to pursue groundbreaking high-frequency, high-efficiency, and high-power-density power conversion. The switching performance of cascode GaN HEMT is studied at first. An accurate behavior-level simulation model is developed with comprehensive consideration of the impacts o

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39

Wen, Hao. "High-Efficiency and High-Frequency Resonant Converter Based Single-Stage Soft-Switching Isolated Inverter Design and Optimization with Gallium-Nitride (GaN)." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/105134.

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Isolated inverter can provide galvanic isolation which is necessary for some applications with safety regulations. Traditionally, a two-stage configuration is widely applied with isolated dc-dc stage and a sinusoidal pulse-width-modulated (SPWM) dc-ac stage. However, this two-stage configuration suffers from more components count, more complex control and tend to have lower efficiency and lower power density. Meanwhile, a large dc bus capacitor is needed to attenuate the double line frequency from SPWM for two-stage configuration. Therefore, the single-stage approach including an isolated dc-r

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40

ISLAM, MD SHAHRUL. "Can Asymmetry Quench Self-Heating in MOS High Electron Mobility Transistors?" OpenSIUC, 2020. https://opensiuc.lib.siu.edu/theses/2736.

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High electron mobility transistors (HEMTs) have long been studied for high frequency and high-power application. Among widely known high electron mobility transistors, AlGaN/GaN HEMTs are having the upper hand due to high electron mobility of the GaN channel. Over the times, issues like current collapse, gate leakage, self-heating and gate lag have questioned the performance and reliability of these devices. In the recent years, engineers have come up with newer architectures to address some of these issues. Inserting a high-k dielectric oxide layer in the gate stack proved to be an effective

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41

Ammer, Khan Ammer Khan. "Metal to ceramic joining for high temperature applications." Thesis, Brunel University, 2003. http://bura.brunel.ac.uk/handle/2438/5375.

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The phenomenal growth rate for the use of engineering ceramics is attributed to successful scientific responses to industrial demand. These materials are replacing metal and its alloys in diverse applications from cutting tools and heat engine components to integrated circuits. Joining technology plays a vital role in this changing and evolving technology as success and failure comes with breaking new barriers. It is important to improve existing techniques and to develop new techniques that reliably join simple shape components to form complex assemblies or join dissimilar materials such as m

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42

Zetterling, Carl-Mikael. "Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs." Doctoral thesis, KTH, Electronic Systems Design, 1997. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2514.

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<p>Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. One important process step is the formationof an insulator on the silicon carbide surface that may be usedas a) a gate dielectric, b) for device isolation or c) forpassivation of the surface. Silicon dioxide and aluminumnitride have been suggested for these purposes. This thesisco

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43

Chen, Xiuping. "Embedded active and passive methods to reduce the junction temperature of power and RF electronics." Thesis, Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51901.

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AlGaN/GaN high electron mobility transistors (HEMTs) have been widely used for high power and high frequency RF communications due to their fast switching and large current handling capabilities. The reliability of such devices is strongly affected by the junction temperature where the highest magnitude occurs in a local region on the drain side edge of the gate called the hotspot. Thus, thermal management of these devices remains a major concern in the design and reliability of systems employing AlGaN/GaN HEMTs. Due to the large power densities induced in these devices locally near the drain

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44

Farrell, Richard. "High temperature studies of thin film aluminum nitride and piezoelectric characterization of mesa structures." Morgantown, W. Va. : [West Virginia University Libraries], 2009. http://hdl.handle.net/10450/10299.

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Thesis (M.S.)--West Virginia University, 2009.<br>Title from document title page. Document formatted into pages; contains vi, 74 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 68-71).

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45

Reusch, David Clayton. "High Frequency, High Power Density Integrated Point of Load and Bus Converters." Diss., Virginia Tech, 2012. http://hdl.handle.net/10919/26920.

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The increased power consumption and power density demands of modern technologies combined with the focus on global energy savings have increased the demands on DC/DC power supplies. DC/DC converters are ubiquitous in everyday life, found in products ranging from small handheld electronics requiring a few watts to warehouse sized server farms demanding over 50 megawatts. To improve efficiency and power density while reducing complexity and cost the modular building block approach is gaining popularity. These modular building blocks replace individually designed specialty power supplies, providi

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46

Huang, Xiucheng. "High Frequency GaN Characterization and Design Considerations." Diss., Virginia Tech, 2016. http://hdl.handle.net/10919/73188.

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The future power conversion system not only must meet the characteristics demanded by the load, but also have to achieve high power density with high efficiency, high ambient temperature, and high reliability. Density and efficiency are two key drivers and metrics for the advancement of power conversion technologies. Generally speaking, a high performance active device is the first force to push power density to meet the requirement of modern systems. Silicon has been a dominant material in power management since the late 1950s. However, due to continuous device optimizations and improvements

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47

Newham, Wesley Scott. "Development of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on diamond substrates." Thesis, Monterey California. Naval Postgraduate School, 2006. http://hdl.handle.net/10945/2820.

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Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide bandgap devices such as gallium nitride (GaN) to include the possibility for high power and high frequency operation. A new generation of high speed â high frequency devices is required to meet current and future military needs. The Gallium Nitride High Electron Mobility Transistor (HEMT) is showing great promise as the enabling technology in the development of military radar s

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48

Alshahed, Muhammad [Verfasser]. "Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications : Fabrication, Characterization and Modelling / Muhammad Alshahed." Düren : Shaker, 2019. http://d-nb.info/1196488622/34.

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Barclay, Joshua David. "High Temperature Water as an Etch and Clean for SiO2 and Si3N4." Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404614/.

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An environmentally friendly, and contamination free process for etching and cleaning semiconductors is critical to future of the IC industry. Under the right conditions, water has the ability to meet these requirements. Water becomes more reactive as a function of temperature in part because the number of hydronium and hydroxyl ions increase. As water approaches its boiling point, the concentration of these species increases over seven times their concentrations at room temperature. At 150 °C, when the liquid state is maintained, these concentrations increase 15 times over room temperature. Du

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Vijayakumar, Arun. "INVESTIGATION OF REACTIVELY SPUTTERED SILICON CARBON BORON NITRIDE (SiCBN) THIN FILMS FOR HIGH TEMPERATURE APPLICATIONS." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2143.

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The increasing demand for efficient energy systems in the last decade has brought about the development of advanced sensor systems that utilize advance detection methods to help in preventive maintenance of these essential systems. These usually are needed in hard to access environments where conditions are extreme and unfit for human interaction. Thin film based sensors deposited directly on the surfaces exposed to harsh environments can serve as ideal means of measuring the temperature of the component during operation. They provide the basic advantage of proximity to the surface and hence a

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