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Journal articles on the topic 'High Temperature Gallium Nitride'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Volcheck, V. S., M. S. Baranava, and V. R. Stempitsky. "Thermal conductivity of wurtzite gallium nitride." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 67, no. 3 (2022): 285–97. http://dx.doi.org/10.29235/1561-8358-2022-67-3-285-297.

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This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity. Since the heat in gallium nitride is transported almost exclusively by phonons, its thermal conductivity has a temperature behavior typical of most nonmetallic crystals: the thermal conductivity increases proportionally to the third power of temperature at lower temperatures, reaches its maximum at approximately 1/20 of the Debye temperature and decreases proportionally to temperature at higher temperatures. It is shown that the thermal c

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2

Drygaś, Mariusz, Katarzyna Lejda, Jerzy F. Janik, et al. "New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN–Titanium Nitride TiN." Materials 14, no. 14 (2021): 3794. http://dx.doi.org/10.3390/ma14143794.

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Presented is a study on the preparation, via original precursor solution chemistry, of intimately mixed composite nanocrystalline powders in the system gallium nitride GaN–titanium nitride TiN, atomic ratio Ga/Ti = 1/1, which were subjected to high-pressure (7.7 GPa) and high-temperature (650, 1000, and 1200 °C) sintering with no additives. Potential equilibration toward bimetallic compounds upon mixing of the solutions of the metal dimethylamide precursors, dimeric {Ga[N(CH3)2]3}2 and monomeric Ti[N(CH3)2]4, was studied with 1H- and 13C{H}-NMR spectroscopy in C6D6 solution. The different nitr

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3

Kometani, Ryosuke, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori. "Surface morphology on high-temperature plasma-etched gallium nitride." Transactions of the Materials Research Society of Japan 38, no. 2 (2013): 325–28. http://dx.doi.org/10.14723/tmrsj.38.325.

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4

Езубченко, И. С., М. Я. Черных, П. А. Перминов та ін. "Особенности роста гетероструктур нитрида галлия на подложках кремния: управляемая пластическая деформация". Письма в журнал технической физики 47, № 14 (2021): 26. http://dx.doi.org/10.21883/pjtf.2021.14.51183.18766.

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Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapour deposition. Substrate plastic deformations that occur during the growth process with the effective compressive stresses accumulation in the film were observed at temperatures of 930oC-975oC. An approach of silicon controlled plastic deformation by high-temperature annealing combined with the in situ SiNx layer growth after heterostructure epitaxy is proposed. This approach would simplify optimization of the gallium nitride heterostructures architecture for various technological tasks.

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5

Yonenaga, I., T. Hoshi, and A. Usui. "High Temperature Hardness of Bulk Single Crystal GaN." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 343–48. http://dx.doi.org/10.1557/s1092578300004488.

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The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.

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6

Meneghesso, Gaudenzio, Matteo Meneghini, Augusto Tazzoli, et al. "Reliability issues of Gallium Nitride High Electron Mobility Transistors." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 39–50. http://dx.doi.org/10.1017/s1759078710000097.

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In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The ro

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7

Sugiura, Takaya, Naoki Takahashi, Ryohei Sakota, Kazunori Matsuda, and Nobuhiko Nakano. "High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials." IEEE Journal of the Electron Devices Society 10 (2022): 203–11. http://dx.doi.org/10.1109/jeds.2022.3150915.

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8

Hicks, M. L., J. Tabeart, M. J. Edwards, et al. "High Temperature Measurement of Elastic Moduli of (0001) Gallium Nitride." Integrated Ferroelectrics 133, no. 1 (2012): 17–24. http://dx.doi.org/10.1080/10584587.2012.663309.

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9

Volcheck, V. S., and V. R. Stempitsky. "Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material." Doklady BGUIR 19, no. 6 (2021): 74–82. http://dx.doi.org/10.35596/1729-7648-2021-19-6-74-82.

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The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride heterostructure field-effect transistor lead to the formation of a hot spot near the conducting channel and result in the degradation of the drain current, output power and device reliability. The purpose of this work is to develop the design of a gallium nitride heterostructure field-effect transistor with an effective heat-removal system and to study using

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10

Duraij, Martijn S., Yudi Xiao, Gabriel Zsurzsan, and Zhe Zhang. "Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions." Journal of Microelectronics and Electronic Packaging 18, no. 4 (2021): 168–76. http://dx.doi.org/10.4071/imaps.1545724.

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Abstract Compact power electronic circuits and higher operating temperatures of switching devices call for an analysis and verification on the impact of the parasitic components in these devices. The found drift mechanisms in a gallium-nitride field effect transistors (GaN-FET) are studied by literature and related to measurement results. The measurements in extreme temperature conditions are far beyond the manufacturer-recommended operating range. Influences to parasitic elements in both static and dynamic operation of the GaN-FETs are investigated and related toward device losses in switch-m

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11

Shur, Michael. "(Invited) Ultrawide Bandgap Transistors for High Temperature and Radiation Hard Applications." ECS Transactions 109, no. 8 (2022): 21–30. http://dx.doi.org/10.1149/10908.0021ecst.

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Ultra-wide bandgap semiconductors - boron nitride, diamond, gallium oxide, and AlN - have a potential for high-temperature and radiation hard applications. These materials have a high breakdown field and large atom displacement energy correlated with a higher radiation hardness. Some of these materials, especially diamond, have a high thermal conductivity supporting a better heat handling capability, high low field mobility, and a high saturation velocity (for example, boron nitride) enabling a higher operating frequency, better microwave devices, and supporting operation in the 300 GHz band a

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12

Zhang, Ling, Rong Zhang, Marek P. Boleslawski, and T. F. Kuech. "Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 351–56. http://dx.doi.org/10.1557/s1092578300002714.

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Metal organic vapor phase epitaxy (MOVPE) of GaN has been carried out using diethyl gallium chloride (DEGaCl) and ammonia. The growth rate and efficiency of the DEGaCl-based growth decreases with increasing temperature when compared to trimethyl gallium (TMG)-based growth under similar conditions. Both low temperature buffer and the high temperature GaN layers were grown using the DEGaCl-NH3 precursor combination on the basal plane of sapphire and compared to similar structures grown using TMG and NH3. DEGaCl-based growth reveals an improved growth behavior under identical growth conditions to

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13

Sharma, Ram Chhavi, Raina Nandal, Nisha Tanwar, Reema Yadav, Jayant Bhardwaj, and Aakash Verma. "Gallium Arsenide and Gallium Nitride Semiconductors for Power and Optoelectronics Devices Applications." Journal of Physics: Conference Series 2426, no. 1 (2023): 012008. http://dx.doi.org/10.1088/1742-6596/2426/1/012008.

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Abstract The advancement in technology in semiconductor materials significantly contributed in improvement of human life by bringing breakthrough in fabrication of optoelectronics and power devices which have wide applications in medicine and communication. The Gallium Arsenide (GaAs) and Gallium Nitride (GaN) are versatile materials for such applications but with relative merits and demerits. GaAs transistors are suitable for both narrowband and wideband applications due to very wide operating frequency range (30 MHz to millimetre-wave frequencies as high as 250 GHz). They are highly sensitiv

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14

Jiang, W., and W. J. Weber. "Effect of irradiation temperature on dynamic recovery in gallium nitride." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 242, no. 1-2 (2006): 431–33. http://dx.doi.org/10.1016/j.nimb.2005.08.163.

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15

Bishop, S. G., J. P. Hadden, R. Hekmati, J. K. Cannon, W. W. Langbein, and A. J. Bennett. "Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens." Applied Physics Letters 120, no. 11 (2022): 114001. http://dx.doi.org/10.1063/5.0085257.

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Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon col

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16

Amilusik, Mikolaj, Marcin Zajac, Tomasz Sochacki, et al. "Carbon and Manganese in Semi-Insulating Bulk GaN Crystals." Materials 15, no. 7 (2022): 2379. http://dx.doi.org/10.3390/ma15072379.

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Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds,

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17

Volcheck, V. S., and V. R. Stempitsky. "Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System." Doklady BGUIR 20, no. 1 (2022): 40–47. http://dx.doi.org/10.35596/1729-7648-2022-20-1-40-47.

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The self-heating effect exerts a considerable influence on the characteristics of high-power electronic and optoelectronic devices based on gallium nitride. An extremely non-uniform distribution of the dissipated power and a rise in the average temperature in the gallium nitride heterostructure field-effect transistor lead to the formation of a hot spot near the conductive channel and result in the degradation of the drain current, power gain and device reliability. The purpose of this work is to design a gallium nitride heterostructure field-effect transistor with an effective graphene heat-r

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18

Tan, Aik Kwan, Nur Atiqah Hamzah, and Sha Shiong Ng. "X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures." Defect and Diffusion Forum 425 (May 31, 2023): 9–14. http://dx.doi.org/10.4028/p-188z42.

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Indium gallium nitride / gallium nitride (InGaN/GaN) heterostructures were grown by using metal organic vapor deposition technique with four different growth temperatures (740 °C, 760 °C, 780 °C, and 800 °C). The structural properties and crystalline quality were investigated using high resolution X-ray diffraction (HRXRD) technique. XRD ω-2θ scan mode at GaN (002) diffraction plane was performed to assess the film’s quality. Through the simulation fitting, the indium composition and the thickness of the thin films were obtained. From the observation, an increase in the growth temperature resu

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19

TSAI, JEFF T. H., and ZI-JIE LIAO. "GALLIUM NITRIDE NANOWIRES ENHANCED HIGH-EFFICIENCY COLD CATHODE FLUORESCENT LAMP." Nano 06, no. 05 (2011): 431–34. http://dx.doi.org/10.1142/s1793292011002792.

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We demonstrated a cold cathode fluorescent lamp that contains gallium nitride ( GaN ) nanowires at the electrode surfaces in a gas discharge light source to enhance the power efficiency of this luminance system. GaN in the nanowire structure has a high geometric aspect ratio, which makes it an ideal plasma ignition enhancer. The nanostructure enhancer not only improves a lower ignition voltage but also eliminates the use of mercury in the conventional cold cathode fluorescent lamp system. Due to high temperature of plasma, the GaN nanowires are partially dissociated to release the Ga ions into

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20

He, Kai Ji, Shu Cai Wang, and Kai Ming Wang. "Preparation and Characterization of Nanometer Gallium Nitride by Gas-Solid Reaction." Advanced Materials Research 1118 (July 2015): 97–102. http://dx.doi.org/10.4028/www.scientific.net/amr.1118.97.

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Firstly, nano Gallium oxide(Ga2O3), as raw material of nano Gallium nitride(GaN), was prepared by special liquid-phase precipitation method. Subsequently，nano GaN powder was prepared by ammonia solution method through self-made experimental apparatus，and characterized by XRD and TEM methods. By controlling reaction temperature, reaction time and nitrogen flow，optimum parameters were determined to prepare nano GaN powder. Result shows that nano GaN powder, which is high purity and small particle, Can be prepared at 1000°C~1200°C holding above 2h and 100L/h flow

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21

Harris, John, David Huitink, and Dan Ewing. "Package Design and Analysis for Vertical Gallium Nitride Field Effect Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2021, HiTEC (2021): 000058–63. http://dx.doi.org/10.4071/2380-4491.2021.hitec.000058.

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Abstract Gallium nitride (GaN) is a wide band gap semi-conductor with superior electron mobility to silicon carbide. These properties allow for the design of high temperature capable devices with excellent on resistance and breakdown voltage for their size. However, bulk GaN is difficult to fabricate and doping for field effect transistor (FET) control has been elusive, so vertical GaN devices are not commonplace. This paper measures the characteristics of vertical GaN FETs in the development stage and discusses packaging them for fabrication feedback and for future high temperature aplication

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22

Kazys, Rymantas, and Vaida Vaskeliene. "High Temperature Ultrasonic Transducers: A Review." Sensors 21, no. 9 (2021): 3200. http://dx.doi.org/10.3390/s21093200.

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There are many fields such as online monitoring of manufacturing processes, non-destructive testing in nuclear plants, or corrosion rate monitoring techniques of steel pipes in which measurements must be performed at elevated temperatures. For that high temperature ultrasonic transducers are necessary. In the presented paper, a literature review on the main types of such transducers, piezoelectric materials, backings, and the bonding techniques of transducers elements suitable for high temperatures, is presented. In this review, the main focus is on ultrasonic transducers with piezoelectric el

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23

Kusaka, Kazuya, Hanabusa Takao, Kikuo Tominaga, and Noriyoshi Yamauchi. "Effect of Substrate Temperature on Crystal Orientation and Residual Stress in RF Sputtered Gallium Nitride Films." Materials Science Forum 490-491 (July 2005): 613–18. http://dx.doi.org/10.4028/www.scientific.net/msf.490-491.613.

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The crystal orientation and residual stress in gallium nitride (GaN) films deposited on a single-crystal (0001) sapphire substrate using a new sputtering system are examined through x-ray diffraction measurements as part of a study of low-temperature sputtering techniques for GaN. The new rf sputtering system has an isolated deposition chamber to prevent contamination with impurities, and is expected to produce high-purity nitride films. GaN films are deposited at various substrate temperatures and constant gas pressure and input power. This new system is found to produce GaN films with good c

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24

Denbaars, S. P. "Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics." International Journal of High Speed Electronics and Systems 08, no. 02 (1997): 265–82. http://dx.doi.org/10.1142/s0129156497000093.

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In this article we review the key technologies for GaN based materials and devices. Developments in the methods for thin film deposition by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) and resulting film properties are highlighted. Breakthroughs in materials growth has enabled extremely high efficiency blue and green GaN LEDs to be achieved for the first time. GaN LEDs complete the primary color spectrum and have enabled bright and reliable full-color solid state displays to be realized. Recently, room temperature operation of pulsed current injection blue-vi

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25

Foxon, C. T., T. S. Cheng, D. Korakakis, et al. "Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 484–89. http://dx.doi.org/10.1557/s1092578300002933.

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Various methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas.

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26

Porowski, S., B. Sadovyi, S. Gierlotka, et al. "The challenge of decomposition and melting of gallium nitride under high pressure and high temperature." Journal of Physics and Chemistry of Solids 85 (October 2015): 138–43. http://dx.doi.org/10.1016/j.jpcs.2015.05.006.

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27

Qamar, Afzaal, Savannah R. Eisner, Debbie G. Senesky, and Mina Rais-Zadeh. "Ultra-High-Q Gallium Nitride SAW Resonators for Applications With Extreme Temperature Swings." Journal of Microelectromechanical Systems 29, no. 5 (2020): 900–905. http://dx.doi.org/10.1109/jmems.2020.2999040.

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28

Drygaś, Mariusz, Piotr Jeleń, Marta Radecka, and Jerzy F. Janik. "Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN." RSC Advances 6, no. 47 (2016): 41074–86. http://dx.doi.org/10.1039/c6ra05706c.

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Single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH<sub>3</sub> at temperatures in the range 650–950 °C for 6–90 hours afforded high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN.

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Yuan, Yunyang, Zhishan Li, and Zikai Wang. "A realistic assessment of the prospect of silicon be replaced by other materials for IC applications." Journal of Physics: Conference Series 2497, no. 1 (2023): 012014. http://dx.doi.org/10.1088/1742-6596/2497/1/012014.

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Abstract Silicon is the most common material used in semi-conductor. It can be used to make single crystal silicon wafer. Though it has the widest usage, silicon has high calorific value. Also, the performance loss is high compared to silicon carbide and the operating temperature is relatively low compared to gallium oxide. Luckily, there are several materials that could possibly replace silicon. The first one is 2D semiconductor. The prospective evaluation of 2D semiconductors is high. But now the biggest problem is the low-resistance connections with them. The second one is gallium nitride.

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Yonenaga, Ichiro, Tetsuya Hoshi, and Akira Usui. "Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures." Japanese Journal of Applied Physics 39, Part 2, No. 3A/B (2000): L200—L201. http://dx.doi.org/10.1143/jjap.39.l200.

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Zhang, ZiHao, Jebreel M. Salem, and Dong Sam Ha. "A High Temperature 4H-SiC Voltage Reference for Depletion Mode GaN-Based Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (2017): 000118–21. http://dx.doi.org/10.4071/2380-4491.2017.hiten.118.

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Abstract High temperature electronics are highly demanded for many applications such as automotive, space, and oil and gas exploration. Electronic circuits for those applications are required to operate reliably without using bulky cooling systems. Circuits based on silicon (Si) suffer from high leakage currents at high temperatures. Silicon Carbide (SiC) circuits, on the other hand, are suitable for high temperature applications due to the wide bandgap and offer high breakdown voltage and low leakage current. This paper presents a negative voltage reference for high temperature applications u

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Dargar, Shashi Kant, J. K. Srivastava, Santosh Bharti, and Abha Nyati. "Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 1 (2017): 144. http://dx.doi.org/10.11591/ijece.v7i1.pp144-151.

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<p>As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10<sup>7 &l

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Chen, Wei-Sheng, Li-Lin Hsu, and Li-Pang Wang. "Recycling the GaN Waste from LED Industry by Pressurized Leaching Method." Metals 8, no. 10 (2018): 861. http://dx.doi.org/10.3390/met8100861.

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In recent years, with the increasing research and development of the light-emitting diode (LED) industry, which contains gallium nitride (GaN), it is expected that there will be a large amount of related wastes in the future. Gallium has an extremely high economic value, therefore, it is necessary to establish a recycling system for the GaN waste. However, GaN is a direct-gap semiconductor and with its high energy gap, high hardness, and high melting point, these make it difficult to recycle. Therefore, this study will analyze the physical characteristics of LED wastes containing GaN and carry

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Salem, Jebreel M., and Dong Sam Ha. "A High Temperature Passive GaN-HEMT Mixer for Downhole Communications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (2016): 000272–77. http://dx.doi.org/10.4071/2016-hitec-272.

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Abstract Declining reserves of easily accessible natural resources have motivated the oil and gas industry to drill deeper. Temperatures in these hostile wells can exceed 210 °C. Cooling and conventional heat extraction techniques are impractical in such a harsh environment. Reliable electronic designs that can sustain high temperature become necessary. This paper presents a high temperature passive RF mixer that is suited for downhole communications. The proposed mixer is designed to upconvert or downconvert the incoming signal with a low conversion loss (CL) and high linearity and reliable o

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35

Drygas, Mariusz, Katarzyna Lejda, Jerzy F. Janik, Svitlana Stelmakh, and Bogdan Palosz. "Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1)." Materials 15, no. 6 (2022): 2200. http://dx.doi.org/10.3390/ma15062200.

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A study is presented on the synthesis of reaction-mixed nitride nanopowders in the reference system of aluminium nitride AlN, gallium nitride GaN, and titanium nitride TiN (Al:Ga:Ti = 1:1:1) followed by their high-pressure and high-temperature sintering towards novel multi-nitride composite nanoceramics. The synthesis starts with a 4 h reflux in hexane of the mixture of the respective metal dimethylamides, which is followed by hexane evacuation, and reactions of the residue in liquid ammonia at −33 °C to afford a mixed metal amide/imide precursor. Plausible equilibration towards a bimetallic A

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Abdullah, Qahtan Nofan, Fong Kwong Yam, Yushamdan Yusof, and Hassan Zainuriah. "Fabrication Gallium Nitride (GaN) Nanowires by Thermal Chemical Vapor Deposition (TCVD) Technique." Advanced Materials Research 925 (April 2014): 450–54. http://dx.doi.org/10.4028/www.scientific.net/amr.925.450.

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In this paper, low-dimensional gallium nitride (GaN) nanowires have been successfully grown on silicon substrate through thermal chemical vapor deposition (TCVD); no metal catalyst was used to assist growth of nanostructure. A high purity of gallium nitride powder was used as a starting material, evaporated at 1150OC for 2 hour and then annealing at temperature 1000OC under stable flow of ammonia (NH3) gas in horizontal quartz tube. The morphological investigation and crystalline and orientations growth of GaN nanostructure were carried out by employing scanning electron microscopy (SEM), high

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Bouveyron, Romain, Mrad Mrad, and Matthew Charles. "V-pit pinning at the interface of high and low-temperature gallium nitride growth." Japanese Journal of Applied Physics 58, SC (2019): SC1035. http://dx.doi.org/10.7567/1347-4065/ab09d8.

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38

O'Mahony, Donagh, Walter Zimmerman, Sinje Steffen, et al. "Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment." Semiconductor Science and Technology 24, no. 12 (2009): 125008. http://dx.doi.org/10.1088/0268-1242/24/12/125008.

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Volcheck, V. S., and V. R. Stempitsky. "Device characterization of gallium nitride high electron mobility transistor with a boron nitride heat-spreading element." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 68, no. 2 (2023): 156–66. http://dx.doi.org/10.29235/1561-8358-2023-68-2-156-166.

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A local thermal management solution for high electron mobility transistors based on GaN was developed using a BN layer as a heat-spreading element. The thermally conducting and electrically insulating nature of BN allows it to be placed close to the active area and to be in direct contact with the electrodes and the heat sink, thus introducing an additional heat-escaping route. The numerical simulations of a GaN high electron mobility transistor with the BN heat-spreading element revealed the improvement in the DC, breakdown, small-signal AC and transient characteristics. In case of sapphire s

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Tschumak, Elena, Katja Tonisch, Jörg Pezoldt, and Donat J. As. "Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates." Materials Science Forum 615-617 (March 2009): 943–46. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.943.

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Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction. In the case of cubic GaN layers with equal layer thickness an improvement of the layer quality in terms of full width of the half maximum can be achieved by using higher carbonization temperatures. The higher crystalline quality led to an in¬crease of the residual stress in the grown layer. An increase in the thickness of the cubic Gallium Nitride allows to improve the crystallinity and to reduce the residual stress.

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Huang, Huolin, Feiyu Li, Zhonghao Sun, and Yaqing Cao. "Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices." Micromachines 9, no. 12 (2018): 658. http://dx.doi.org/10.3390/mi9120658.

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Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanis

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Chaudhuri, Reet, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing, and Debdeep Jena. "A polarization-induced 2D hole gas in undoped gallium nitride quantum wells." Science 365, no. 6460 (2019): 1454–57. http://dx.doi.org/10.1126/science.aau8623.

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A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The

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Boćkowski, M., I. Grzegory, S. Krukowski, et al. "Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures." Journal of Crystal Growth 274, no. 1-2 (2005): 55–64. http://dx.doi.org/10.1016/j.jcrysgro.2004.09.083.

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Austin, Aaron J., Elena Echeverria, Phadindra Wagle, et al. "High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures." Nanomaterials 10, no. 12 (2020): 2434. http://dx.doi.org/10.3390/nano10122434.

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Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-

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Thierry-Jebali, Nicolas, Olivier Ménard, Arnaud Yvon, et al. "Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride." Materials Science Forum 679-680 (March 2011): 812–15. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.812.

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Ohmic contacts represent a major technological brick for the development of high power devices on Gallium Nitride. Al(200 nm) Ti(70 nm) metallization on n+-GaN, annealed at 650 °C, provides a “Specific Contact Resistivity” (SCR) in the range mid 10-5 Ω.cm², which is low enough for the main switching power applications. However, the Al-Ti metallic compound phases formed during the annealing step result from solid-solid reactions, which may lead to high stress and / or poor cohesion, possibly deleterious to contact reliability. In this work, we have investigated several configurations of Ti-Al-S

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Roccaforte, Fabrizio, Filippo Giannazzo, and Giuseppe Greco. "Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices." Micro 2, no. 1 (2022): 23–53. http://dx.doi.org/10.3390/micro2010002.

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Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electric field (>2 MV/cm) enable superior performances to be obtained with respect to the traditional silicon devices. Hence, today, a variety of diodes and transistors based on SiC and GaN are already available in the market. For the fabrication of these electronic devices, selective doping is required to create either n-type or p-type regions with d

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ZHU, ZHENPING. "DETONATION OF MOLECULAR PRECURSORS AS A TOOL FOR THE ASSEMBLY OF NANO-SIZED MATERIALS." Modern Physics Letters B 17, no. 29n30 (2003): 1477–93. http://dx.doi.org/10.1142/s0217984903006554.

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The detonation of carbon- or nitrogen-containing explosives not only produces powerful shock waves but also provides elemental building blocks and a unique high-pressure and high-temperature physical environment for the construction of various nanostructures. This review highlights the situation and key progresses in the detonation approach towards diamond nanoparticles, graphitic carbon nanotubes, fullerene molecules, and gallium nitride nanocrystals. Further extension of the peaceful-use detonation applications and rational reactor design are also proposed.

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Loretz, Patrick, Thomas Tschirky, Fabio Isa, et al. "Conductive n-type gallium nitride thin films prepared by sputter deposition." Journal of Vacuum Science & Technology A 40, no. 4 (2022): 042703. http://dx.doi.org/10.1116/6.0001623.

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Given the recent increase in the demand for gallium nitride (GaN) in different markets like optoelectronics and power devices, the request for epitaxially grown GaN will further increase. To meet this high demand, higher throughput and more economical manufacturing technologies must be advanced. In this work, GaN thin films are deposited by reactive sputter deposition from a liquid gallium target at a substrate temperature of 900 °C. The layers are grown epitaxially on c-plane oriented sapphire in an industrial-scale sputter tool from Evatec AG. Due to the growth rate of >1 nm/s and the fas

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Zhu, Zhifu, Heqiu Zhang, Hongwei Liang, et al. "High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 893 (June 2018): 39–42. http://dx.doi.org/10.1016/j.nima.2018.03.033.

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Xu, Xin-Biao, Jia-Qi Wang, Yuan-Hao Yang, et al. "High-frequency traveling-wave phononic cavity with sub-micron wavelength." Applied Physics Letters 120, no. 16 (2022): 163503. http://dx.doi.org/10.1063/5.0086751.

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Thin-film gallium nitride (GaN) is a promising platform for phononic integrated circuits that hold great potential for scalable information processing processors. Here, an unsuspended traveling phononic resonator based on a high-acoustic-index-contrast mechanism is realized in GaN-on-Sapphire with a frequency up to 5 GHz, which matches the typical superconducting qubit frequency. A sixfold increment in quality factor is found when temperature decreases from room temperature ( Q = 5000) to [Formula: see text] ( Q = 30 000), and thus, a frequency-quality factor product of [Formula: see text] is

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